CN115527830A - Semiconductor etching device for optimizing plasma distribution - Google Patents
Semiconductor etching device for optimizing plasma distribution Download PDFInfo
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- CN115527830A CN115527830A CN202211120129.7A CN202211120129A CN115527830A CN 115527830 A CN115527830 A CN 115527830A CN 202211120129 A CN202211120129 A CN 202211120129A CN 115527830 A CN115527830 A CN 115527830A
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/3244—Gas supply means
- H01J37/32449—Gas control, e.g. control of the gas flow
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32082—Radio frequency generated discharge
- H01J37/32174—Circuits specially adapted for controlling the RF discharge
- H01J37/32183—Matching circuits
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32715—Workpiece holder
- H01J37/32724—Temperature
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32798—Further details of plasma apparatus not provided for in groups H01J37/3244 - H01J37/32788; special provisions for cleaning or maintenance of the apparatus
- H01J37/32816—Pressure
- H01J37/32834—Exhausting
- H01J37/32844—Treating effluent gases
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
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Abstract
The invention relates to the technical field of semiconductor micromachining, and discloses a device for semiconductor etching for optimizing plasma distribution, which comprises a process cavity, wherein an ion diffuser is arranged on the process cavity, an ion excitation cavity is arranged on the ion diffuser, an impedance matcher is arranged on the ion excitation cavity, an isolator is arranged on the impedance matcher, a microwave generator is arranged on the isolator, a radio frequency matcher is arranged on the process cavity, microwaves are transmitted into the ion excitation cavity through a waveguide to form plasma under the coordination of process gas, the plasma enters the process cavity through the ion diffuser, the radio frequency matcher is started at the same time, and a radio frequency bias ion source generates the plasma, so that the process treatment efficiency is improved, the induced damage radio frequency bias of the plasma can be effectively reduced, the directionality of the plasma can be provided, directional kinetic energy is provided for the movement of the plasma, and the distribution of the plasma in the process cavity is optimized.
Description
Technical Field
The invention relates to the technical field of semiconductor micromachining, in particular to a device for semiconductor etching for optimizing plasma distribution.
Background
In a semiconductor process, a process of etching a semiconductor material generally includes a dry etching process or a wet etching process, wherein the dry etching process using plasma for etching can effectively control the size of an etching opening and is the most mainstream etching process at present.
In the prior art, a single ion source is usually used for exciting process gas in a vacuum cavity so as to generate plasma, namely the plasma is directly formed in the process cavity, so that the plasma is directly contacted with a wafer to generate larger plasma induced damage or a part of the process gas in the ion reaction cavity is excited by using a single remote plasma source so as to generate the plasma, the process gas is subjected to air intake and vacuum pumping so as to generate a convection mode, the plasma in the reaction cavity is pumped to the process cavity and chemically reacts with the wafer, but the density and the ionization rate of the plasma excited by the single ion source are lower, the plasma is not ideally distributed in the process cavity, so that the process efficiency in the process cavity is reduced and the treatment effect is reduced.
Disclosure of Invention
The present invention is directed to an apparatus for semiconductor etching that optimizes plasma distribution to solve the problems set forth in the background art.
In order to solve the technical problems, the invention provides the following technical scheme: the device for semiconductor etching comprises a process cavity, wherein a sealing door plate is installed on the process cavity, an ion diffuser is installed on the input end of the process cavity, an ion excitation cavity is installed on the input end of the ion diffuser, a process air inlet pipe and an impedance matcher are installed on the ion excitation cavity, an isolator is installed on the input end of the impedance matcher, a microwave generator is installed on the input end of the isolator, an electrode adjusting part is arranged on the process cavity, a radio frequency matcher is installed on the process cavity, the radio frequency matcher is connected with the electrode adjusting part through a copper pipe, the microwave is started, the microwave is transmitted into the ion excitation cavity through a waveguide, a plasma is formed under the coordination of process gases, the plasma enters the process cavity through the ion diffuser, meanwhile, the radio frequency is started, a radio frequency bias ion source generates the plasma, the plasma with high density and the ionization rate of the process gases are provided, the process treatment efficiency is improved, the plasma generated by the microwave has obvious advantages for treating devices sensitive to static electricity, the plasma has high frequency oscillation in the direction, the plasma concentration is higher, the plasma concentration can be effectively reduced, the plasma damage effect is provided, and the plasma processing efficiency is improved.
As a preferred technical scheme, the process cavity is provided with a baffle valve, the baffle valve is in butt joint with the output end of the vacuum pump, and when the process cavity needs to be vacuumized, the baffle valve is controlled to be opened, so that the vacuum pump sucks in the process cavity, and the process cavity is favorably subjected to pressure maintaining.
As a preferred technical scheme, a heat dissipation and cooling assembly and a waste gas treatment assembly are arranged on the process cavity; and the heat dissipation and cooling assembly is matched with the waste gas treatment assembly, so that the waste gas generated by plasma etching is purified while the rapid cooling is realized.
As a preferred technical scheme, the heat dissipation and cooling component comprises a heat dissipation fan, an air inlet hole, a first control valve, an air outlet hole, a connecting pipe, a treatment tank and a second control valve;
the improved wafer etching device is characterized in that an air inlet hole and an air outlet hole are formed in the process cavity, a cooling fan is installed on one side, close to the air inlet hole, of the process cavity, a first control valve is installed on the air inlet hole, the air outlet hole is connected with the processing tank through a connecting pipe, a second control valve is arranged on the connecting pipe, a third control valve is installed at the output end of the processing tank, an exhaust pipe is installed on the third control valve, after the wafer in the process cavity is etched, the first control valve, the second control valve and the third control valve are opened, the cooling fan is started, an air flow channel formed by the air inlet hole, the air outlet hole, the connecting pipe, the processing tank and the exhaust pipe can rapidly exhaust air flow carrying heat, rapid cooling of the wafer after etching is finished is facilitated, and etching quality of the wafer is guaranteed.
As a preferred technical scheme, the waste gas treatment assembly comprises a first electromagnetic conduction block, a second electromagnetic conduction block, a storage tank, an opening and a filter screen;
install first conductive magnetic block and second conductive magnetic block in the processing tank, first conductive magnetic block and second conductive magnetic block are symmetrical, and have the holding vessel through first conductive magnetic block and second conductive magnetic block fixed mounting, the storage has the active carbon granule in the holding vessel, the trompil has all been seted up to two terminal surfaces of holding vessel, install the filter screen in the trompil, place the holding vessel behind between first conductive magnetic block and the second conductive magnetic block, adsorb fixed back through the magnetic force of first conductive magnetic block and second conductive magnetic block, can form the rigid support to the holding vessel, can avoid the holding vessel to receive the influence of air current to take place to remove to, when air flow channel carries out the heat dissipation cooling in the process chamber, can absorb impurity in the air current and the long harmful waste gas of plasma sculpture through filter screen and the inside active carbon granule on the holding vessel, realize the purification to the air current, avoid causing the pollution to air circumstance.
As preferred technical scheme, be provided with exhaust-gas treatment one-level reinforcing subassembly and exhaust-gas treatment second grade reinforcing subassembly on the processing jar, through heat dissipation cooling subassembly provides the operation drive power for exhaust-gas treatment one-level reinforcing subassembly and exhaust-gas treatment second grade reinforcing subassembly, and exhaust-gas treatment one-level reinforcing subassembly and exhaust-gas treatment second grade reinforcing subassembly cooperate.
As a preferred technical scheme, the waste gas treatment primary reinforcing component comprises a universal driving shaft, a stirring plate, a fixed rod, a fixed plate, a transmission shaft, a turntable and fan blades;
all seted up first pivot on two terminal surfaces of holding vessel, install the universal driving shaft through fixing bearing in the first pivot, install on the universal driving shaft and stir the board, it is located the holding vessel to stir the board, install four dead levers in the processing jar, four install the fixed plate on the dead lever, the second has been seted up on the fixed plate and has been changeed the hole, the second changes the downthehole transmission shaft of installing through connecting bearing, the transmission shaft is connected with the universal driving shaft, and transmission shaft and universal driving shaft are in same center axis, the carousel is installed to the tip that the universal driving shaft kept away from the universal driving shaft, the flabellum is installed along circumference to the lateral wall of carousel, when heat dissipation cooling assembly operation, because the air current of fast flow can drive the carousel and rotate through the flabellum, and the carousel carries out rotatory in-process and can drive the universal driving shaft and stir through the transmission shaft to can let the universal driving shaft stir the active carbon granule in the holding vessel, be favorable to improving the contact surface of waste gas in active carbon granule and the air current and connecing, promote purifying effect.
As preferred technical scheme, the conical block is installed to one side that the carousel is close to the venthole, is convenient for spread the air current through the conical block, and the favourable air current that improves promotes the effect to the flabellum, install cross piece on the universal driving shaft, the cross recess has been seted up on the transmission shaft, the gomphosis of cross piece is in the cross recess, can be when guaranteeing the transmission between universal driving shaft and transmission shaft, is convenient for change the holding vessel.
According to a preferable technical scheme, the waste gas treatment secondary enhancement assembly comprises a power supply box, a piston cylinder, a branch pipe, a piston rod, a pressing head, a supporting spring and a cutting plate;
the processing tank is provided with a power supply box and a piston cylinder, the power supply box is respectively connected with a first conductive magnetic block and a second conductive magnetic block through two leads, the piston cylinder is connected with an exhaust pipe through a branch pipe, a piston is arranged in the piston cylinder in a sliding manner, a piston rod is arranged on the piston and penetrates through the output end of the piston cylinder, a pressing head is arranged at the end part of the piston rod far away from the piston cylinder and connected with the piston cylinder through a supporting spring, a cutting plate is arranged on the linkage shaft, the pressing head is contacted with a touch switch of the power supply box in an initial state, at the moment, the power supply box is in a shutdown state, and when the waste gas processing primary reinforcing component operates, the linkage shaft can drive the cutting plate to cut magnetic induction lines between the first conductive magnetic block and the second conductive magnetic block in a rotating process, form the eddy current electric field, be favorable to adsorbing the plasma in the process chamber, meanwhile, when the air current passes through the blast pipe and discharges fast, the atmospheric pressure that utilizes the rapid flow can move through branch pipe absorption piston cylinder inner piston, thereby can let the piston drive the pressing head through the piston rod and compress supporting spring, make the power supply box start, let the power supply box, the wire, first electromagnetic conduction piece, second electromagnetic conduction piece and eddy current electric field form closed circuit, thereby can ionize the plasma of gathering in the electric field, make can arouse the activity in the plasma, let plasma become the catalyst, be favorable to recovering the regeneration to the active carbon granule that absorbs waste gas, improve the life of active carbon granule, and can also carry out recycle to surplus plasma in the plasma sculpture.
Compared with the prior art, the invention has the following beneficial effects:
when the round crystal on the electrode chuck needs to be etched, the microwave generator is started, the microwave is transmitted into the ion excitation cavity through the waveguide, the plasma is formed under the coordination of process gas, the plasma enters the process cavity through the ion diffuser, the radio frequency matcher is started at the same time, the radio frequency bias ion source generates the plasma, the plasma with higher density and the ionization rate of the process gas can be provided, so that the process treatment efficiency is improved, and the plasma generated by the microwave has obvious advantages for treating devices sensitive to static electricity.
After the round crystal in the process cavity is etched, the first control valve, the second control valve and the third control valve are opened, the radiating fan is started, the air flow channel formed by the air inlet hole, the air outlet hole, the connecting pipe, the processing tank and the exhaust pipe can quickly discharge air flow carrying heat, the round crystal after the etching is finished is favorably and quickly cooled, the etching quality of the round crystal is guaranteed, meanwhile, after the storage tank is fixed by the magnetic adsorption of the first electromagnetic conduction block and the second electromagnetic conduction block, the storage tank can be rigidly supported, the storage tank can be prevented from being influenced by the air flow to move, in addition, when the air flow channel is used for cooling the process cavity in a heat dissipation mode, impurities in the air flow and harmful waste gas grown by plasma etching can be absorbed through the filter screen on the storage tank and the active carbon particles inside, the purification of the air flow is realized, and the pollution to the air environment is avoided.
When the heat dissipation cooling assembly operates, because the air current of fast flow can drive the carousel through the flabellum and rotate, the carousel carries out the in-process of rotatory and can drive the universal driving shaft through the transmission shaft and carry out synchronous rotation to can let the universal driving shaft drive stir the board and stir the activated carbon particle in to the holding vessel, be favorable to improving the contact surface of activated carbon particle and waste gas in the air current and connect, promote purifying effect.
When the primary exhaust gas treatment enhancement assembly operates, the linkage shaft can drive the cutting plate to cut magnetic induction lines between the first conductive magnetic block and the second conductive magnetic block in the rotating process to form an eddy current field, which is beneficial to adsorbing plasma in a process cavity, meanwhile, when air flow is rapidly discharged through the exhaust pipe, the rapidly flowing air pressure can be used for adsorbing a piston in a piston cylinder through a branch pipe to move, so that the piston can drive a pressing head to compress a supporting spring through a piston rod, a power supply box is started, the power supply box, a lead, the first conductive magnetic block, the second conductive magnetic block and the eddy current field form a closed loop, and the plasma gathered in the electric field can be ionized, so that the activity in the plasma can be excited, the recovered plasma becomes a catalyst, the activated carbon particles absorbing exhaust gas can be regenerated, the service life of the activated carbon particles is prolonged, and the surplus plasma in plasma etching can be recycled.
Drawings
The accompanying drawings, which are included to provide a further understanding of the invention and are incorporated in and constitute a part of this specification, illustrate embodiments of the invention and together with the description serve to explain the principles of the invention and not to limit the invention. In the drawings:
FIG. 1 is a schematic view of the overall structure of the present invention;
FIG. 2 is a schematic view of a cutaway structure of the process chamber of the present invention;
FIG. 3 is a schematic view of the construction of a treatment tank of the present invention;
FIG. 4 is a first cutaway schematic view of FIG. 3;
FIG. 5 is a second cutaway schematic view of FIG. 3;
FIG. 6 is an enlarged schematic view of FIG. 5 at a;
fig. 7 is an enlarged schematic view of fig. 5 at b.
In the figure: 1. a process chamber; 2. an ion diffuser; 3. a process air inlet pipe; 4. an ion excitation cavity; 5. an impedance matcher; 6. an isolator; 7. a microwave generator; 8. an electrode adjustment member; 801. an electrode plate; 802. an electrode chuck; 803. a servo motor; 9. a radio frequency matcher; 10. a sealing door panel;
11. a heat dissipation and cooling component; 1101. a heat radiation fan; 1102. an air inlet; 1103. a first control valve; 1104. an air outlet; 1105. a connecting pipe; 1106. a treatment tank; 1107. a second control valve; 1108. a third control valve; 1109. an exhaust pipe;
12. an exhaust gas treatment component; 1201. a first conductive magnetic block; 1202. a second conductive magnetic block; 1203. a storage tank; 1204. opening a hole; 1205. a filter screen;
13. a waste gas treatment primary reinforcing component; 1301. a first rotary hole; 1302. a linkage shaft; 1303. stirring the plate; 1304. fixing the rod; 1305. a fixing plate; 1306. a second rotary hole; 1307. connecting a bearing; 1308. a drive shaft; 1309. a turntable; 1310. a fan blade; 1311. a conical block; 1312. a cross block; 1313. a cross groove;
14. a secondary exhaust treatment enhancement assembly; 1401. a power supply box; 1402. a piston cylinder; 1403. a branch pipe; 1404. a piston; 1405. a piston rod; 1406. a pressing head; 1407. a support spring; 1408. and cutting the board.
Detailed Description
The technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the drawings in the embodiments of the present invention, and it is obvious that the described embodiments are only a part of the embodiments of the present invention, and not all of the embodiments. All other embodiments, which can be obtained by a person skilled in the art without making any creative effort based on the embodiments in the present invention, belong to the protection scope of the present invention.
Example (b): as shown in fig. 1 to 7, the present invention provides the following technical solutions: the device for etching the semiconductor with optimized plasma distribution comprises a process cavity 1, the process cavity 1 is provided with a sealing door plate 10, the input end of the process cavity 1 is provided with an ion diffuser 2, an ion excitation cavity 4 is arranged on the input end of the ion diffuser 2, a process air inlet pipe 3 and an impedance matcher 5 are arranged on the ion excitation cavity 4, an isolator 6 is arranged on the input end of the impedance matcher 5, a microwave generator 7 is arranged on the input end of the isolator 6, an electrode adjusting part 8 is arranged on the process cavity 1, a radio frequency matcher 9 is arranged on the process cavity 1, the radio frequency matcher 9 is connected with the electrode adjusting part 8 through a copper pipe, a microwave generator 7 is started, microwaves are transmitted into the ion excitation cavity 4 through a waveguide, plasma is formed under the coordination of the process gas, enters the process cavity 1 through the ion diffuser 2, meanwhile, the radio frequency matcher 9 is started, the radio frequency bias ion source generates plasma, high-density plasma and process gas ionization rate can be provided, thereby improving the processing efficiency of the process, and has obvious advantages for processing devices sensitive to static electricity and plasmas generated by microwaves, because the frequency oscillation in the microwave plasma electric field is higher, the concentration of the generated plasma is higher, can effectively reduce the induced damage radio frequency bias of the plasma, provide the directionality of the plasma, provide the kinetic energy with the direction for the movement of the plasma, optimize the distribution of the plasma in the process cavity 1, the plasma processing effect and efficiency can be improved, and the stability of the wafer processing technology is integrally improved.
Wherein: when the microwave generator 7 receives a high-frequency electric signal of a microwave power supply, the microwave generator 7 converts the high-frequency electric signal of the microwave power supply into microwaves through system control, and the microwaves are transmitted through a waveguide and transmitted into the ion excitation cavity 4 through the isolator 6 and the impedance matcher 5;
the isolator 6 plays a role in protecting the microwave generator 7, prevents the reflected microwaves from damaging the microwave generator 7, and when the microwaves are reflected, the reflected microwaves are absorbed by the isolator 6;
the impedance matcher 5 plays a role in adjusting the impedance of waveguide transmission, and the microwave is transmitted into the ion excitation cavity 4 to form resonance by adjusting the waveguide impedance, so that the process gas is excited to generate plasma;
the ion excitation cavity 4 is connected with the atmosphere side waveguide and the vacuum cavity through the quartz tube, when the microwave is transmitted through the quartz tube through the waveguide, the microwave forms resonance in the vacuum cavity, and therefore the process gas is excited through the resonance region to generate plasma;
the process gas inlet pipe 3 is convenient for gathering different process gases together and inputting the gathered process gases into the ion excitation cavity 4 to provide the process gases required by the plasma generated by the ion excitation cavity 4;
the ion diffuser 2 is used for bringing plasma into the process cavity 1 through the continuous convection of process air inlet and vacuumizing after the ion excitation cavity 4 generates the plasma so as to process the wafer, and the plasma is uniformly distributed through the ion diffuser 2 in the process that the plasma enters the process cavity 1 from the ion excitation cavity 4, so that the process cavity 1 obtains uniform and high-density plasma;
the electrode adjusting part 8 adopts a servo motor 803, the servo motor 803 is connected with a precise ball screw, the servo motor 803 rotates to drive the ball screw to rotate, a ball bearing of the ball screw is connected with an electrode chuck 802, an electrode plate 801 is fixedly arranged on the upper part of the process cavity 1, the electrode distance is determined according to the process requirement of a product, the adjustable distance of the electrode is 0-50mm, the lifting distance of the electrode is obtained by the rotation number of turns of the servo motor 803 and the lead of the screw, and the purpose of designing the lifting of the electrode is to take and place a wafer by an external manipulator on the one hand. The initial form degree of electrode is servo motor 803 origin position, after the manipulator sent the wafer into technology cavity 1, the wafer fell on electrode chuck 802, the distance that the electrode was set for according to the technological parameter at this moment rose to required position, is favorable to going on of processing, on the other hand is because different electrode spacing, and radio frequency plasma discharges differently, and when the electrode spacing was nearer, the impedance that forms the return circuit behind the electrode discharge production plasma was less, and the electric field between the electrode was great this moment, and ion bombardment energy is great. When the distance between the electrodes is long, the impedance of a loop formed after the electrodes discharge to generate plasma is large, the electric field between the electrodes is small at the moment, and the energy of ion bombardment is small, so that the lifting of the electrodes is used for realizing the loading and unloading of the wafer on the one hand, and the energy of the plasma bombardment is changed by changing the electric field of the electrodes on the other hand;
the radio frequency matcher 9 is connected to the electrode of the process cavity 1 through a copper bar, impedance can be automatically matched when the radio frequency matcher 9 obtains a radio frequency signal, the electrode of the process cavity 1 generates a high-frequency electromagnetic field, when the electrode generates the high-frequency electromagnetic field, ions are made to reciprocate along the direction of the electromagnetic field, and bombardment energy of the ions can be changed by changing radio frequency power.
The process flow is as follows: the microwave generator 7 converts a high-frequency electric signal into microwaves when receiving a microwave source signal, the microwaves pass through the isolator 6 and then enter the impedance matcher 5, the microwaves are transmitted into the ion excitation cavity 4 after impedance matching, the high-tightness plasma is formed by introducing process inlet air into the ion excitation cavity 4 through the process inlet pipe 3 in a vacuum environment, the plasma enters the process cavity 1 through the ion diffuser 2, the electrode height of the process cavity 1 is adjusted to an appointed electrode height through the electrode adjusting piece 8 at the moment, radio frequency is introduced, the plasma generated in the ion excitation cavity 4 moves along the direction of the electromagnetic field through the electromagnetic field generated by the radio frequency electrode, and then the wafer is processed, so that the combination of remote plasma and radio frequency bias voltage is realized.
The process cavity 1 is provided with a baffle valve, the baffle valve is in butt joint with the output end of the vacuum pump, and when the process cavity 1 needs to be vacuumized, the baffle valve is controlled to be opened, so that the vacuum pump sucks the process cavity 1, and the process cavity 1 is favorably subjected to pressure maintaining.
The process cavity 1 is provided with a heat dissipation and cooling assembly 11 and a waste gas treatment assembly; 12, the heat dissipation cooling assembly 11 is matched with the exhaust gas treatment assembly 12, so that the exhaust gas generated by plasma etching is purified while the rapid cooling is realized.
As shown in fig. 1-5, the desuperheating assembly 11 includes a heat dissipating fan 1101, an air inlet 1102, a first control valve 1103, an air outlet 1104, a connecting pipe 1105, a processing tank 1106, and a second control valve 1107;
the process cavity body 1 is provided with an air inlet 1102 and an air outlet 1104, a cooling fan 1101 is installed on one side, close to the air inlet 1102, of the process cavity body 1, a first control valve 1103 is installed on the air inlet 1102, the air outlet 1104 is connected with a processing tank 1106 through a connecting pipe 1105, a second control valve 1107 is arranged on the connecting pipe 1105, a third control valve 1108 is installed at the output end of the processing tank 1106, an exhaust pipe 1109 is installed on the third control valve 1108, after the etching of the round crystal in the process cavity body 1 is finished, the first control valve 1103, the second control valve 1107 and the third control valve 1108 are opened, the cooling fan 1101 is started, and the air flow channel formed by the air inlet 1102, the air outlet 1104, the connecting pipe 1105, the processing tank 1106 and the exhaust pipe 1109 can discharge the air flow carrying heat quickly, so that the round crystal after the etching is finished can be cooled quickly, and the etching quality of the round crystal can be guaranteed.
As shown in fig. 4-5, the exhaust treatment assembly 12 includes a first conductive magnetic block 1201, a second conductive magnetic block 1202, a storage tank 1203, an opening 1204, and a filter screen 1205;
install first conductive magnetic block 1201 and second conductive magnetic block 1202 in the treatment tank 1106, first conductive magnetic block 1201 and second conductive magnetic block 1202 are symmetrical, and through first conductive magnetic block 1201 and second conductive magnetic block 1202 fixed mounting have holding vessel 1203, active carbon particle has been stored in holding vessel 1203, trompil 1204 has all been seted up to two terminal surfaces of holding vessel 1203, install filter screen 1205 in the trompil 1204, place holding vessel 1203 behind first conductive magnetic block 1201 and second conductive magnetic block 1202, adsorb fixedly through the magnetic force of first conductive magnetic block 1201 and second conductive magnetic block 1202, can form the rigid support to holding vessel 1203, can avoid holding vessel 1203 to receive the influence of air current to take place to remove, and, when the air current passageway carries out the heat dissipation cooling in to technology cavity 1, can absorb impurity in the air current and the harmful waste gas that plasma etching is grown through filter screen 1205 on holding vessel 1203 and inside active carbon particle, realize the purification to the air current, avoid causing air pollution.
Be provided with exhaust-gas treatment one-level reinforcing component 13 and exhaust-gas treatment second grade reinforcing component 14 on the processing jar 1106, through heat dissipation cooling component 11 provides the operation drive power for exhaust-gas treatment one-level reinforcing component 13 and exhaust-gas treatment second grade reinforcing component 14, and exhaust-gas treatment one-level reinforcing component 13 and exhaust-gas treatment second grade reinforcing component 14 cooperate.
As shown in fig. 4-6, the exhaust gas treatment primary reinforcing assembly 13 comprises a linkage shaft 1302, a stirring plate 1303, a fixing rod 1304, a fixing plate 1305, a transmission shaft 1308, a rotary disc 1309 and fan blades 1310;
the two end faces of the storage tank 1203 are respectively provided with a first rotating hole 1301, a linkage shaft 1302 is installed in each first rotating hole 1301 through a fixed bearing, a stirring plate 1303 is installed on each linkage shaft 1302, each stirring plate 1303 is located in the storage tank 1203, four fixing rods 1304 are installed in each treatment tank 1106, each fixing rod 1304 is provided with a fixing plate 1305, each fixing plate 1305 is provided with a second rotating hole 1306, each second rotating hole 1306 is internally provided with a transmission shaft 1308 through a connecting bearing 1307, each transmission shaft 1308 is connected with the linkage shaft 1302, each transmission shaft 1308 and the linkage shaft 1302 are located on the same central axis, the end portion, far away from the linkage shaft 1302, of each transmission shaft 1308 is provided with a rotating disc 1309, fan blades 1310 are installed on the side wall of each rotating disc 1309 in the circumferential direction, when the heat dissipation and cooling assembly 11 operates, because fast flowing air flow can drive the rotating discs 1309 to rotate through the fan blades 1310, the linkage shafts 1308 can drive the linkage shafts 1302 to synchronously rotate in the rotating process of the rotating discs 1309, and therefore the linkage shafts 1302 can drive the stirring plates 1303 to stir the active carbon particles in the storage tank 1203 to stir, which is beneficial to improving contact surface of waste gas, and purification effect.
The conical block 1311 is installed on one side, close to the air outlet 1104, of the rotary disc 1309, the air flow is convenient to diffuse through the conical block 1311, the pushing effect of the air flow on the fan blades 1310 is favorably improved, the cross block 1312 is installed on the linkage shaft 1302, the cross groove 1313 is formed in the transmission shaft 1308, the cross block 1312 is embedded in the cross groove 1313, and the storage tank 1203 can be conveniently replaced while transmission between the linkage shaft 1302 and the transmission shaft 1308 is guaranteed.
As shown in fig. 1, 3-5 and 7, the exhaust gas treatment secondary enhancement assembly 14 comprises a power supply box 1401, a piston cylinder 1402, a branch tube 1403, a piston 1404, a piston rod 1405, a pressing head 1406, a supporting spring 1407 and a cutting plate 1408;
a power supply box 1401 and a piston cylinder 1402 are arranged on the processing tank 1106, the power supply box 1401 is respectively connected with the first conductive magnetic block 1201 and the second conductive magnetic block 1202 through two wires, the piston cylinder 1402 is connected with an exhaust pipe 1109 through a branch pipe 1403, a piston 1404 is installed in the piston cylinder 1402 in a sliding mode, a piston rod 1405 is arranged on the piston 1404, the piston rod 1405 penetrates through the output end of the piston cylinder 1402, and the end of the piston rod 1405 remote from the piston cylinder 1402 is fitted with a press head 1406, the pressing head 1406 is connected with the piston cylinder 1402 through a supporting spring 1407, the linkage shaft 1302 is provided with a cutting plate 1408, in an initial state, the pressing head 1406 is in contact with a touch switch of the power box 1401, at the moment, the power box 1401 is in a shutdown state, when the exhaust gas treatment primary reinforcing assembly 13 operates, the linkage shaft 1302 can drive the cutting plate 1408 to cut the magnetic induction lines between the first conductive magnetic blocks 1201 and the second conductive magnetic blocks 1202 in the rotating process to form an eddy current electric field, which is beneficial to adsorbing the plasma in the process cavity 1, at the same time, when the air flow is rapidly discharged through the exhaust pipe 1109, the piston 1404 in the adsorption piston cylinder 1402 can be moved through the branch pipe 1403 by the rapid flow of air pressure, so that the piston 1404 can drive the pressing head 1406 to compress the supporting spring 1407 through the piston rod 1405, so that the power box 1401 is started, the power box 1401, the conducting wire, the first conducting magnetic block 1201, the second conducting magnetic block 1202 and the eddy current electric field form a closed loop, therefore, the plasma gathered in the electric field can be ionized, so that the activity in the plasma can be excited, the plasma can be used as a catalyst, the activated carbon particles for absorbing waste gas can be recovered and regenerated, the service life of the activated carbon particles is prolonged, and the surplus plasma in the plasma etching can be recycled.
The working principle of the invention is as follows:
when the round crystal on the electrode chuck 802 needs to be etched, the microwave generator 7 is started, the microwave is transmitted into the ion excitation cavity 4 through the waveguide, a plasma is formed under the coordination of process gas, the plasma enters the process cavity 1 through the ion diffuser 2, the radio frequency matcher 9 is simultaneously started, the radio frequency bias ion source generates the plasma, the plasma with higher density and the ionization rate of the process gas can be provided, so that the process treatment efficiency is improved, and the plasma generated by the microwave has obvious advantages for treating devices sensitive to static electricity.
After the etching of the round crystal in the process cavity 1 is finished, the first control valve 1103, the second control valve 1107 and the third control valve 1108 are opened, and the heat dissipation fan 1101 is started, an airflow channel formed by the air inlet 1102, the air outlet 1104, the connecting pipe 1105, the processing tank 1106 and the exhaust pipe 1109 can rapidly exhaust airflow carrying heat, so that the round crystal after the etching is rapidly cooled, and the etching quality of the round crystal is ensured.
When heat dissipation cooling assembly 11 moves, because the air current of fast flow can drive carousel 1309 through flabellum 1310 and rotate, carousel 1309 carries out the in-process of rotation and can drive universal driving shaft 1302 through transmission shaft 1308 and carry out synchronous rotation to can let universal driving shaft 1302 drive stir board 1303 and stir the activated carbon granule in to holding vessel 1203, be favorable to improving the contact surface of activated carbon granule and waste gas in the air current and connect, promote purifying effect.
When the primary exhaust gas treatment enhancement assembly 13 operates, the linkage shaft 1302 can drive the cutting plate 1408 to cut magnetic induction lines between the first conductive magnetic block 1201 and the second conductive magnetic block 1202 in the rotating process to form an eddy current electric field, which is beneficial to adsorbing plasma in the process cavity 1, meanwhile, when airflow is rapidly discharged through the exhaust pipe 1109, the rapidly flowing air pressure can be used for adsorbing a piston 1404 in a piston cylinder 1402 through a branch pipe 1403 to move, so that the piston 1404 can drive a pressing head 1406 to compress a supporting spring 1407 through a piston rod 1405, a power box 1401 is started, the power box, a lead wire, the first conductive magnetic block 1201, the second conductive magnetic block 1202 and the eddy current electric field form a closed loop, and therefore plasma gathered in the electric field can be ionized, activity in the plasma can be excited, the plasma can become a catalyst, which is beneficial to recovery and regeneration of activated carbon particles absorbing exhaust gas, the service life of the activated carbon particles is prolonged, and surplus plasma in plasma etching can be recycled.
It will be evident to those skilled in the art that the invention is not limited to the details of the foregoing illustrative embodiments, and that the present invention may be embodied in other specific forms without departing from the spirit or essential attributes thereof. The present embodiments are therefore to be considered in all respects as illustrative and not restrictive, the scope of the invention being indicated by the appended claims rather than by the foregoing description, and all changes which come within the meaning and range of equivalency of the claims are therefore intended to be embraced therein. Any reference sign in a claim should not be construed as limiting the claim concerned.
Claims (9)
1. A semiconductor etching device for optimizing plasma distribution is characterized in that: the device for semiconductor etching for optimizing plasma distribution comprises a process cavity (1), wherein a sealing door plate (10) is installed on the process cavity (1), an ion diffuser (2) is installed on the input end of the process cavity (1), an ion excitation cavity (4) is installed on the input end of the ion diffuser (2), a process air inlet pipe (3) and an impedance matcher (5) are installed on the ion excitation cavity (4), an isolator (6) is installed on the input end of the impedance matcher (5), a microwave generator (7) is installed on the input end of the isolator (6), an electrode adjusting piece (8) is arranged on the process cavity (1), a radio frequency matcher (9) is installed on the process cavity (1), and the radio frequency matcher (9) is connected with the electrode adjusting piece (8) through a copper pipe.
2. The apparatus for semiconductor etching with optimized plasma distribution as claimed in claim 1, wherein: and a baffle valve is arranged on the process cavity (1) and is butted with the output end of the vacuum pump.
3. The apparatus for semiconductor etching with optimized plasma distribution as claimed in claim 1, wherein: the process cavity (1) is provided with a heat dissipation and cooling assembly (11) and a waste gas treatment assembly; (12) And the heat dissipation and temperature reduction assembly (11) is matched with the waste gas treatment assembly (12), so that the waste gas generated by plasma etching is purified while the rapid temperature reduction is realized.
4. An apparatus for semiconductor etching with optimized plasma distribution as claimed in claim 3, wherein: the heat dissipation and temperature reduction assembly (11) comprises a heat dissipation fan (1101), an air inlet hole (1102), a first control valve (1103), an air outlet hole (1104), a connecting pipe (1105), a treatment tank (1106) and a second control valve (1107);
open on technology cavity (1) and be equipped with inlet port (1102) and venthole (1104), radiator fan (1101) are installed to one side that technology cavity (1) is close to inlet port (1102), install first control valve (1103) on inlet port (1102), venthole (1104) are connected with treatment tank (1106) through connecting pipe (1105), be provided with second control valve (1107) on connecting pipe (1105), install third control valve (1108) on treatment tank (1106) output, install blast pipe (1109) on third control valve (1108).
5. An apparatus for semiconductor etching with optimized plasma distribution as claimed in claim 4, wherein: the exhaust gas treatment assembly (12) comprises a first electromagnetic conduction block (1201), a second electromagnetic conduction block (1202), a storage tank (1203), an opening (1204) and a filter screen (1205);
install first electricity conduction magnetic block (1201) and second electricity conduction magnetic block (1202) in handling jar (1106), first electricity conduction magnetic block (1201) and second electricity conduction magnetic block (1202) are symmetrical, and have holding vessel (1203) through first electricity conduction magnetic block (1201) and second electricity conduction magnetic block (1202) fixed mounting, be equipped with the active carbon granule in holding vessel (1203), trompil (1204) have all been seted up to two terminal surfaces of holding vessel (1203), install filter screen (1205) in trompil (1204).
6. An apparatus for semiconductor etching with optimized plasma distribution as claimed in claim 5, wherein: be provided with exhaust-gas treatment one-level reinforcing component (13) and exhaust-gas treatment second grade reinforcing component (14) on handling jar (1106), through heat dissipation cooling subassembly (11) provide the operation drive power for exhaust-gas treatment one-level reinforcing component (13) and exhaust-gas treatment second grade reinforcing component (14), and exhaust-gas treatment one-level reinforcing component (13) and exhaust-gas treatment second grade reinforcing component (14) cooperate.
7. An apparatus for semiconductor etching with optimized plasma distribution as claimed in claim 6, wherein: the waste gas treatment primary reinforcing component (13) comprises a linkage shaft (1302), a stirring plate (1303), a fixed rod (1304), a fixed plate (1305), a transmission shaft (1308), a rotary table (1309) and fan blades (1310);
the improved multifunctional cleaning device is characterized in that two end faces of the storage tank (1203) are provided with first rotating holes (1301), a linkage shaft (1302) is installed in each first rotating hole (1301) through a fixed bearing, a stirring plate (1303) is installed on the linkage shaft (1302), the stirring plate (1303) is located in the storage tank (1203), four fixing rods (1304) are installed in the treatment tank (1106), a fixing plate (1305) is installed on each fixing rod (1304), a second rotating hole (1306) is formed in each fixing plate (1305), a transmission shaft (1308) is installed in each second rotating hole (1306) through a connecting bearing (1307), the transmission shaft (1308) is connected with the linkage shaft (1302), the transmission shaft (1308) and the linkage shaft (1302) are located on the same central axis, a rotating disc (1309) is installed at the end part, far away from the linkage shaft (1302), of the transmission shaft (1308), and fan blades (1310) are installed on the side wall of the rotating disc (1309) in the circumferential direction.
8. An apparatus for semiconductor etching with optimized plasma distribution as claimed in claim 7, wherein: one side of the turntable (1309) close to the air outlet (1104) is provided with a conical block (1311), the linkage shaft (1302) is provided with a cross block (1312), the transmission shaft (1308) is provided with a cross groove (1313), and the cross block (1312) is embedded in the cross groove (1313).
9. An apparatus for semiconductor etching with optimized plasma distribution as claimed in claim 7, wherein: the waste gas treatment secondary enhancement assembly (14) comprises a power supply box (1401), a piston cylinder (1402), a branch pipe (1403), a piston (1404), a piston rod (1405), a pressing head (1406), a supporting spring (1407) and a cutting plate (1408);
the processing tank (1106) is provided with a power supply box (1401) and a piston cylinder (1402), the piston cylinder (1402) is connected with an exhaust pipe (1109) through a branch pipe (1403), a piston (1404) is slidably mounted in the piston cylinder (1402), a piston rod (1405) is mounted on the piston (1404), the piston rod (1405) penetrates through the output end of the piston cylinder (1402), a pressing head (1406) is mounted at the end, far away from the piston cylinder (1402), of the piston rod (1405), the pressing head (1406) is connected with the piston cylinder (1402) through a supporting spring (1407), a cutting plate (1408) is mounted on a linkage shaft (1302), the pressing head (1406) is in contact with a touch switch of the power supply box (1401) in an initial state, and at the moment, the power supply box (1401) is in a running stop state.
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