CN111933764A - Epitaxial wafer of micro LED prefabricated chip structure and preparation method thereof - Google Patents
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/04—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction
- H01L33/06—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction within the light emitting region, e.g. quantum confinement structure or tunnel barrier
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
- H01L33/0062—Processes for devices with an active region comprising only III-V compounds
- H01L33/0066—Processes for devices with an active region comprising only III-V compounds with a substrate not being a III-V compound
- H01L33/007—Processes for devices with an active region comprising only III-V compounds with a substrate not being a III-V compound comprising nitride compounds
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
- H01L33/0062—Processes for devices with an active region comprising only III-V compounds
- H01L33/0075—Processes for devices with an active region comprising only III-V compounds comprising nitride compounds
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/12—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a stress relaxation structure, e.g. buffer layer
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/26—Materials of the light emitting region
- H01L33/30—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table
- H01L33/32—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table containing nitrogen
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Abstract
The invention relates to the technical field of semiconductors, and provides an epitaxial wafer with a micro LED prefabricated chip structure and a preparation method thereof, wherein the epitaxial wafer comprises a substrate and a micro LED chip grown from the substrate, and the micro LED chip is provided with a plurality of stages; the low-temperature buffer layer, the undoped GaN layer and the N-type GaN contact layer sequentially grow on the substrate, the precipitation growth layer is removed from the grown substrate including the quantum well layer and the P-type GaN contact layer to obtain a plurality of levels of the micro LED chip, the precipitation growth layer is obtained by precipitation on the N-type GaN contact layer, the epitaxial wafer of the epitaxial structure of the micro LED prefabricated chip is beneficial to subsequent manufacturing of the micro LED chip, chip etching procedures are reduced, the product yield is improved, the micro LED can be quickly manufactured, and the application prospect is high for marketization of the existing micro LED.
Description
Technical Field
The invention belongs to the technical field of semiconductors, and particularly relates to an epitaxial wafer with a micro LED prefabricated chip structure and a preparation method thereof.
Background
MicroLEDs refer to small size LEDs with chip sizes distributed within the range of 1-100 microns. Due to the advantages of high light emitting efficiency, low power consumption, high resolution, color saturation and the like, the application field of the LED is greatly expanded. In the next generation display technology, the Micro-LED technology is expected to replace the traditional display technology of 'backlight source + liquid crystal', and opens up a new development space for the LED industry. However, there are still many technological bottlenecks to be broken through in the Micro-LED industrialization, and the most critical point is how to divide the 2-6 inch diameter LED chip wafer into independent small-sized Micro-LED units and ensure the product yield and chip performance in mass production.
The substrate material adopted by GaN-based LED epitaxy comprises sapphire (Al)2O3) Silicon carbide (SiC), etc., wherein a sapphire substrate is the mainstream substrate. The cutting mode of the GaN-based LED is mainly ultraviolet laser cutting. The working principle of ultraviolet laser cutting is that high-energy laser is focused on the surface of an LED chip to ablate a cutting groove, and then splitting and film expanding are carried out, so that a separated chip unit is obtained.
However, in the current preparation process of the micro led chip, the number of chip etching processes is large, and the process procedure is complex, so that the product yield of the whole chip is low, and the preparation speed is slow.
Disclosure of Invention
Aiming at the defects in the prior art, the invention provides an epitaxial wafer with a micro LED prefabricated chip structure, and aims to solve the problems that in the prior art, in the preparation process of a micro LED chip, the chip etching process is more, the process procedure is more complex, the product yield of the whole chip is lower, and the preparation speed is higher.
The technical scheme provided by the invention is as follows: an epitaxial wafer of a micro LED prefabricated chip structure comprises a substrate and a micro LED chip grown on the substrate, wherein the micro LED chip is provided with a plurality of stages;
the micro LED chip comprises a substrate, a low-temperature buffer layer, a non-doped GaN layer and an N-type GaN contact layer, wherein the low-temperature buffer layer, the non-doped GaN layer and the N-type GaN contact layer are sequentially grown on the substrate, a precipitation growth layer is removed from the grown substrate containing a quantum well layer and the P-type GaN contact layer to obtain a plurality of stages of micro LED chips, and the precipitation growth layer is obtained by precipitation on the N-type GaN contact layer.
As an improved scheme, the substrate is any one of silicon Si, a sapphire substrate, silicon carbide SiC and gallium nitride GaN;
the size of the micro LED chip comprising a plurality of stages is 0.5-50 microns.
As an improved scheme, the deposition growth layer is prepared by preparing a photoresist mask pattern, removing the deposition growth layer pattern and cleaning the residual photoresist mask pattern, and the deposition growth layer comprises a prefabricated chip structure;
wherein the precipitation growth layer is SiO2Layer or silicon nitride SiNx layer.
As an improved scheme, the preparation mode of the photoresist mask pattern of the deposition growth layer is a photoetching technology or an imprinting technology;
removing the pattern of the deposition growth layer by dry ICP or BOE;
the cleaning solution of the residual photoresist mask pattern is a photoresist removing solution or a sulfuric acid and hydrogen peroxide solution.
The invention also aims to provide a preparation method of an epitaxial wafer of a micro LED prefabricated chip structure, which comprises the following steps:
sequentially growing a low-temperature buffer layer, a non-doped GaN layer and an N-type GaN contact layer on the selected substrate;
preparing a precipitation growth layer containing a prefabricated chip structure on the N-type GaN contact layer;
growing a quantum well layer and a P-type GaN contact layer on the precipitation growth layer with the prefabricated chip structure;
and removing the precipitation growth layer on the grown contact layer containing the quantum well layer and the P-type GaN to obtain the multi-stage MicroLED chip.
As an improved scheme, the step of preparing a precipitation growth layer containing a prefabricated chip structure on the N-type GaN contact layer specifically comprises the following steps:
depositing on the N-type GaN contact layer to generate a deposition generation layer, and generating a photoresist mask pattern on the deposition generation layer;
removing the pattern of the precipitation growth layer which is not protected by the photoresist on the precipitation growth layer to leak the exposed N-type GaN contact layer;
and cleaning the residual photoresist mask pattern to obtain a deposition growth layer containing a prefabricated chip structure.
As an improved scheme, the preparation mode of the photoresist mask pattern on the deposition growth layer is a photoetching technology or an imprinting technology;
removing the pattern of the deposition growth layer which is not protected by the photoresist through dry ICP or wet BOE;
the cleaning solution of the residual photoresist mask pattern is a photoresist removing solution or a sulfuric acid and hydrogen peroxide solution.
As an improved scheme, the substrate is any one of silicon Si, a sapphire substrate, silicon carbide SiC and gallium nitride GaN;
the size of the micro LED chip containing the plurality of stages is 0.5-50 microns.
As an improved scheme, the precipitation growth layer is SiO2Layer or silicon nitride SiNx layer.
As an improvement, the method further comprises the steps of:
controlling and repeatedly executing the steps of preparing a precipitation growth layer containing a prefabricated chip structure on the N-type GaN contact layer and growing a quantum well layer and a P-type GaN contact layer on the precipitation growth layer containing the prefabricated chip structure;
and in each circulation step, modulating the quantum well layer obtained by growth to obtain the red, green and blue micro LED chip.
In the embodiment of the invention, the epitaxial wafer of the micro LED prefabricated chip structure comprises a substrate and a micro LED chip grown from the substrate, wherein the micro LED chip is provided with a plurality of stages; the low-temperature buffer layer, the undoped GaN layer and the N-type GaN contact layer sequentially grow on the substrate, the precipitation growth layer is removed from the grown substrate including the quantum well layer and the P-type GaN contact layer to obtain a plurality of levels of the micro LED chip, the precipitation growth layer is obtained by precipitation on the N-type GaN contact layer, the epitaxial wafer of the epitaxial structure of the micro LED prefabricated chip is beneficial to subsequent manufacturing of the micro LED chip, chip etching procedures are reduced, the product yield is improved, the micro LED can be quickly manufactured, and the application prospect is high for marketization of the existing micro LED.
Drawings
In order to more clearly illustrate the detailed description of the invention or the technical solutions in the prior art, the drawings that are needed in the detailed description of the invention or the prior art will be briefly described below. Throughout the drawings, like elements or portions are generally identified by like reference numerals. In the drawings, elements or portions are not necessarily drawn to scale.
FIG. 1 is a flow chart of an implementation of a method for preparing an epitaxial wafer with a micro LED prefabricated chip structure, provided by the invention;
FIG. 2 is a flow chart of an implementation of the present invention to fabricate a deposited growth layer containing a pre-fabricated chip structure on the N-type GaN contact layer;
fig. 3 and 4 are schematic diagrams of variations of the N-type GaN contact layer provided by the present invention, respectively.
Detailed Description
Embodiments of the present invention will be described in detail below with reference to the accompanying drawings. The following examples are merely for illustrating the technical solutions of the present invention more clearly, and therefore are only examples, and the protection scope of the present invention is not limited thereby.
In the embodiment of the invention, the epitaxial wafer of the micro LED prefabricated chip structure comprises a substrate and a micro LED chip grown from the substrate, wherein the micro LED chip is provided with a plurality of stages;
the micro LED chip comprises a substrate, a low-temperature buffer layer, a non-doped GaN layer and an N-type GaN contact layer, wherein the low-temperature buffer layer, the non-doped GaN layer and the N-type GaN contact layer are sequentially grown on the substrate, a precipitation growth layer is removed from the grown substrate containing a quantum well layer and the P-type GaN contact layer to obtain a plurality of stages of micro LED chips, and the precipitation growth layer is obtained by precipitation on the N-type GaN contact layer.
In this embodiment, the selected substrate is any one of silicon Si, a sapphire substrate, silicon carbide SiC, and gallium nitride GaN;
the size of the micro LED chip containing a plurality of stages is 0.5-50 microns.
In the embodiment of the invention, the sediment growth layer is prepared by preparing a photoresist mask pattern, removing the sediment growth layer pattern and cleaning the residual photoresist mask pattern, and the sediment generation layer comprises a prefabricated chip structure;
wherein the precipitation growth layer is SiO2A layer or SiNx layer of silicon nitride with a thickness of 100nm-10 μm and SiO2The deposition process of (a) uses standard SiH4And N2O process, SiNx deposition process using standard SiH4And NH3And (5) processing.
In the embodiment of the invention, the preparation method of the photoresist mask pattern of the deposition growth layer is a photoetching technology or an imprinting technology, wherein the photoetching technology is to utilize a photoetching plate with specific size and structure arrangement, develop after exposure and transfer the pattern onto the photoresist; the imprinting technology is to transfer a pattern onto a photoresist by using a soft film with specific size and structural arrangement through direct contact, pressing, exposure and curing;
the removal of the pattern of the deposition growth layer not protected by the photoresist is performed by dry ICP or wet etching (BOE), which is a technique of performing thin film etching using plasma. When the gas is present in the form of a plasma, it has two characteristics: on one hand, the chemical activity of the gases in the plasma is much stronger than that of the gases in a normal state, and the gases can react with the materials more quickly by selecting proper gases according to the difference of the etched materials, so that the aim of etching removal is fulfilled; on the other hand, the electric field can be used for guiding and accelerating the plasma, so that the plasma has certain energy, and when the plasma bombards the surface of the etched object, atoms of the etched object material can be knocked out, thereby achieving the purpose of etching by utilizing physical energy transfer. Thus, dry etching is both physical and chemical on the wafer surfaceThe result of the seed process equilibrium; BBOE is HF and NH4F is mixed according to different proportions, and 6:1 BOE etching represents 40% NH4F: 49% HF = 6:1 (volume ratio). HF as the main etching liquid, NH4F is used as a buffer. The concentration of [ H ] +, is fixed by NH4F to maintain a constant etching rate;
the cleaning solution of the residual photoresist mask pattern is a photoresist removing solution or a sulfuric acid and hydrogen peroxide solution.
In the embodiment of the invention, the quantum well layer obtained by growth is modulated to obtain the red, green and blue micro LED chip.
Fig. 1 shows an implementation flowchart of a method for preparing an epitaxial wafer with a micro led prefabricated chip structure, which is shown in fig. 3 and 4, and specifically includes the following steps:
in step S101, a low-temperature buffer layer 1, a non-doped GaN layer 2, and an N-type GaN contact layer 3 are sequentially grown on the selected substrate;
in step S102, a deposition growth layer including a prefabricated chip structure is prepared on the N-type GaN contact layer 3, as shown in fig. 3;
in step S103, growing the obtained quantum well layer and P-type GaN contact layer on the deposition growth layer including the prefabricated chip structure;
in step S104, the deposited growth layer is removed from the grown contact layer including the quantum well layer and the P-type GaN layer to obtain a multi-level micro led chip, as shown in fig. 4.
Fig. 3 and 4 only show one example of implementation, and do not limit the present invention.
In this embodiment, as shown in fig. 2, the step of preparing a precipitate growth layer containing a prefabricated chip structure on the N-type GaN contact layer specifically includes the steps of:
in step S201, a deposition generation layer is deposited on the N-type GaN contact layer, and a photoresist mask pattern is generated on the deposition generation layer;
in step S202, removing the pattern of the deposition growth layer not protected by the photoresist on the deposition growth layer to expose the exposed N-type GaN contact layer;
in step S203, the remaining photoresist mask pattern is cleaned to obtain a deposition growth layer containing a prefabricated chip structure.
In this embodiment, the photoresist mask pattern on the deposition growth layer is prepared by photolithography or imprinting;
removing the pattern of the deposition growth layer which is not protected by the photoresist through dry ICP or wet BOE;
the cleaning solution of the residual photoresist mask pattern is a photoresist removing solution or a sulfuric acid and hydrogen peroxide solution.
In the embodiment of the invention, the steps of preparing a precipitation growth layer containing a prefabricated chip structure on the N-type GaN contact layer and growing a quantum well layer and a P-type GaN contact layer on the precipitation growth layer containing the prefabricated chip structure are controlled to be repeatedly executed;
in each circulation step, the quantum well layer obtained by growth is modulated to obtain a red, green and blue micro LED chip, and finally a colored micro LED epitaxial chip is formed.
In the embodiment of the invention, the epitaxial wafer of the micro LED prefabricated chip structure comprises a substrate and a micro LED chip grown from the substrate, wherein the micro LED chip is provided with a plurality of stages; the low-temperature buffer layer, the undoped GaN layer and the N-type GaN contact layer sequentially grow on the substrate, the precipitation growth layer is removed from the grown substrate including the quantum well layer and the P-type GaN contact layer to obtain a plurality of levels of the micro LED chip, the precipitation growth layer is obtained by precipitation on the N-type GaN contact layer, the epitaxial wafer of the epitaxial structure of the micro LED prefabricated chip is beneficial to subsequent manufacturing of the micro LED chip, chip etching procedures are reduced, the product yield is improved, the micro LED can be quickly manufactured, and the application prospect is high for marketization of the existing micro LED.
The above embodiments are only used to illustrate the technical solution of the present invention, and not to limit the same; while the invention has been described in detail and with reference to the foregoing embodiments, it will be understood by those skilled in the art that: the technical solutions described in the foregoing embodiments may still be modified, or some or all of the technical features may be equivalently replaced; such modifications and substitutions do not depart from the spirit and scope of the present invention, and they should be construed as being included in the following claims and description.
Claims (10)
1. An epitaxial wafer of a micro LED prefabricated chip structure is characterized by comprising a substrate and a micro LED chip grown on the substrate, wherein the micro LED chip is provided with a plurality of stages;
the micro LED chip comprises a substrate, a low-temperature buffer layer, a non-doped GaN layer and an N-type GaN contact layer, wherein the low-temperature buffer layer, the non-doped GaN layer and the N-type GaN contact layer are sequentially grown on the substrate, a precipitation growth layer is removed from the grown substrate containing a quantum well layer and the P-type GaN contact layer to obtain a plurality of stages of micro LED chips, and the precipitation growth layer is obtained by precipitation on the N-type GaN contact layer.
2. The epitaxial wafer with the micro LED precast chip structure of claim 1, wherein the substrate is any one of silicon (Si), sapphire substrate, silicon carbide (SiC) and gallium nitride (GaN);
the size of the micro LED chip comprising a plurality of stages is 0.5-50 microns.
3. The epitaxial wafer with the micro LED prefabricated chip structure according to claim 2, wherein the deposition growth layer is prepared by preparing a photoresist mask pattern, removing the deposition growth layer pattern and cleaning the residual photoresist mask pattern, and the deposition generation layer comprises a prefabricated chip structure;
wherein the precipitation growth layer is SiO2Layer or silicon nitride SiNx layer.
4. The epitaxial wafer with the micro LED prefabricated chip structure according to claim 3, wherein the photoresist mask pattern of the deposition growth layer is prepared by a photoetching technology or an imprinting technology;
removing the pattern of the deposition growth layer by dry ICP or BOE;
the cleaning solution of the residual photoresist mask pattern is a photoresist removing solution or a sulfuric acid and hydrogen peroxide solution.
5. A method for preparing an epitaxial wafer of a micro led prefabricated chip structure according to claim 1, wherein the method comprises the following steps:
sequentially growing a low-temperature buffer layer, a non-doped GaN layer and an N-type GaN contact layer on the selected substrate;
preparing a precipitation growth layer containing a prefabricated chip structure on the N-type GaN contact layer;
growing a quantum well layer and a P-type GaN contact layer on the precipitation growth layer with the prefabricated chip structure;
and removing the precipitation growth layer on the grown contact layer containing the quantum well layer and the P-type GaN to obtain the multi-stage MicroLED chip.
6. The method for preparing an epitaxial wafer with a prefabricated chip structure for a microLED according to claim 5, wherein the step of preparing the precipitation growth layer containing the prefabricated chip structure on the N-type GaN contact layer specifically comprises the following steps:
depositing on the N-type GaN contact layer to generate a deposition generation layer, and generating a photoresist mask pattern on the deposition generation layer;
removing the pattern of the precipitation growth layer which is not protected by the photoresist on the precipitation growth layer to leak the exposed N-type GaN contact layer;
and cleaning the residual photoresist mask pattern to obtain a deposition growth layer containing a prefabricated chip structure.
7. The method for preparing the epitaxial wafer with the micro LED prefabricated chip structure is characterized in that the photoresist mask pattern of the deposition growth layer is prepared by a photoetching technology or an imprinting technology;
removing the pattern of the deposition growth layer which is not protected by the photoresist through dry ICP or wet BOE;
the cleaning solution of the residual photoresist mask pattern is a photoresist removing solution or a sulfuric acid and hydrogen peroxide solution.
8. The method for preparing the epitaxial wafer with the micro LED prefabricated chip structure according to claim 7, wherein the substrate is any one of silicon (Si), a sapphire substrate, silicon carbide (SiC) and gallium nitride (GaN);
the size of the micro LED chip containing the plurality of stages is 0.5-50 microns.
9. The method for preparing an epitaxial wafer with a micro LED prefabricated chip structure according to claim 7, wherein the deposition growth layer is SiO2Layer or silicon nitride SiNx layer.
10. The method for preparing an epitaxial wafer of a micro LED prefabricated chip structure according to the claim 7, characterized in that the method further comprises the following steps:
controlling and repeatedly executing the steps of preparing a precipitation growth layer containing a prefabricated chip structure on the N-type GaN contact layer and growing a quantum well layer and a P-type GaN contact layer on the precipitation growth layer containing the prefabricated chip structure;
and in each circulation step, modulating the quantum well layer obtained by growth to obtain the red, green and blue micro LED chip.
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| CN107946417A (en) * | 2017-11-29 | 2018-04-20 | 北京工业大学 | A kind of panchromatic Minitype LED array vertical epitaxial preparation method |
| CN108010932A (en) * | 2017-11-29 | 2018-05-08 | 北京工业大学 | A kind of Micro-LED array preparation methods of panchromatic stacking-type extension |
| CN107919414A (en) * | 2017-12-04 | 2018-04-17 | 歌尔股份有限公司 | Method, manufacture method, device and the electronic equipment of micro- light emitting diode transfer |
| CN110416249A (en) * | 2019-08-21 | 2019-11-05 | 扬州中科半导体照明有限公司 | A kind of light emitting semiconductor device and preparation method thereof |
| CN111048635A (en) * | 2019-12-27 | 2020-04-21 | 广东省半导体产业技术研究院 | Chip preparation method and chip structure to be stripped |
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