CN111930173B - LDO circuit with low quiescent current and quick response and SOC system - Google Patents

LDO circuit with low quiescent current and quick response and SOC system Download PDF

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CN111930173B
CN111930173B CN202011061149.2A CN202011061149A CN111930173B CN 111930173 B CN111930173 B CN 111930173B CN 202011061149 A CN202011061149 A CN 202011061149A CN 111930173 B CN111930173 B CN 111930173B
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output
output voltage
voltage
tube
compensation
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CN111930173A (en
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徐光明
其他发明人请求不公开姓名
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Xtx Technology Inc
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XTX Technology Shenzhen Ltd
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    • GPHYSICS
    • G05CONTROLLING; REGULATING
    • G05FSYSTEMS FOR REGULATING ELECTRIC OR MAGNETIC VARIABLES
    • G05F1/00Automatic systems in which deviations of an electric quantity from one or more predetermined values are detected at the output of the system and fed back to a device within the system to restore the detected quantity to its predetermined value or values, i.e. retroactive systems
    • G05F1/10Regulating voltage or current
    • G05F1/46Regulating voltage or current wherein the variable actually regulated by the final control device is dc
    • G05F1/56Regulating voltage or current wherein the variable actually regulated by the final control device is dc using semiconductor devices in series with the load as final control devices
    • G05F1/575Regulating voltage or current wherein the variable actually regulated by the final control device is dc using semiconductor devices in series with the load as final control devices characterised by the feedback circuit

Abstract

The invention discloses a low quiescent current fast response LDO circuit and an SOC system.A difference value of a reference voltage and an output voltage is adjusted by an amplifier in the circuit or the system; when the output is low or low, the conduction of the output voltage low-surge control tube is weakened, the grid voltage of the power tube is reduced, the driving current of the power tube is increased, and the output voltage is quickly increased; when output overshoot is performed, the output voltage of the amplifier is reduced, the conduction of the low-overshoot control tube is enhanced, the grid voltage of the power tube is raised, and the output current of the power tube is reduced; because the grid voltage of the power tube is the same as that of the overshoot control tube, the grid voltage is increased to discharge the output of the overshoot control tube, and the output is quickly recovered; the output voltage low-surge control tube and the output voltage overshoot control tube realize the rapid transient response of the LDO output; the amplifier circuit is simple, low quiescent current is met, fast transient response of the LDO is achieved, and meanwhile the circuit architecture is simplified as far as possible.

Description

LDO circuit with low quiescent current and quick response and SOC system
Technical Field
The invention relates to the technical field of linear voltage regulator circuits, in particular to a low-quiescent-current fast-response LDO (low dropout regulator) circuit and an SOC (system on chip).
Background
Due to the Board-level space limitation of PCBs (Printed Circuit boards), more and more Circuit modules are integrated into SOC (system on chip, also called system on chip) systems. Because of the features of small size, low noise, low ripple, etc., the power management circuit in the SOC system generally adopts a LDO (low dropout regulator) circuit architecture. In order to achieve fast transient response when a load suddenly changes, a conventional LDO circuit architecture generally terminates a μ F large external capacitor at an output terminal. In the SOC system, for convenience of on-chip integration, output capacitors of the LDO are all built-in, and capacitance values of the capacitors are generally not large, which causes load transient response of the LDO to be poor. In order to improve the transient response performance of the load, the LDO circuit usually adopts a complex architecture to control the charging and discharging of the grid electrode of the output power tube; the complex circuit architecture means more current branches, which inevitably increases the quiescent current of the LDO.
In order to prolong the service time of a battery power supply system, the SOC system has a low power consumption requirement in a standby mode, which conflicts with the above method for improving the transient response of the LDO, and only the quiescent current of the LDO can be reduced under the condition of ensuring low power consumption, thereby causing the load transient response performance of the LDO to be deteriorated.
In order to solve the problem of transient response performance of the LDO load, a feedback voltage amplifier can be adopted to amplify or reduce the difference value of the reference voltage VREF and the feedback voltage of the output voltage, the grid voltage of an output power tube is adjusted, and the rapid load transient response of the LDO load is realized under the condition of low quiescent current. However, the circuit architecture of the conventional feedback voltage amplifier is generally complex, so that the overall architecture of the LDO circuit also becomes complex, how to satisfy the fast load transient response of the LDO circuit at the same time, and how to simplify the overall architecture of the LDO circuit as much as possible is a problem to be solved urgently.
Therefore, the prior art still needs to be improved and developed.
Disclosure of Invention
The invention aims to provide a low-quiescent-current quick-response LDO (low dropout regulator) circuit and an SOC (system on chip) system, and aims to solve the problem that the conventional LDO circuit cannot simultaneously give consideration to the quick-load transient response performance of the LDO and simplify the circuit architecture.
The technical scheme of the invention is as follows: a low quiescent current fast response LDO circuit, wherein, include feedback voltage amplifier AMP, output voltage low rush control tube MP2, output voltage overshoot control tube MN1, the first compensating network, the second compensating network, the first current source I1, the second current source I2, output power tube MP1, output voltage feedback divider resistance network, output capacitor CL of the internal voltage VDD;
the positive input end of the feedback voltage amplifier AMP is connected with a reference voltage VREF, the negative input end of the feedback voltage amplifier AMP is connected with an output voltage feedback divider resistance network, and the output end of the feedback voltage amplifier AMP is connected with the grid electrode of the output voltage low-surge control tube MP 2;
the output voltage undershoot control tube MP2 is provided with a grid electrode connected with the output end of the feedback voltage amplifier AMP, a source electrode connected with the output voltage VDD, and a drain electrode connected with the connection point of the grid electrode of the output voltage overshoot control tube MN1 and the grid electrode of the output power tube MP 1;
the gate of the output voltage overshoot control tube MN1 is connected with the connection point of the drain of the output voltage overshoot control tube MP2 and the gate of the output power tube MP1, the source is grounded, and the drain is connected with the output voltage VDD;
one end of the first compensation network is connected with the output end of the feedback voltage amplifier, and the other end of the first compensation network is grounded: the first compensation network is used for providing a compensation zero point;
one end of the second compensation network is connected with a power supply voltage VCC, and the other end of the second compensation network is connected with the grid electrode of an output power tube MP 1: the second compensation network is used for providing another compensation zero point;
the connection point of the first current source I1 and the second current source I2 is connected with the grid of the output power tube MP1, the other end of the first current source I1 is connected with a power supply voltage VCC, and the other end of the second current source I2 is grounded;
the source of the output power tube MP1 is connected with a power supply voltage VCC, the grid of the output power tube MP1 is connected with the connection point of a first current source I1 and a second current source I2, and the drain of the output power tube MP1 is connected with an output voltage VDD;
one end of the output voltage feedback voltage-dividing resistance network is connected with an output voltage VDD, and the other end of the output voltage feedback voltage-dividing resistance network is grounded;
one end of the output capacitor CL of the internal voltage VDD is connected with the output voltage VDD, and the other end of the output capacitor CL is grounded;
the feedback voltage amplifier AMP comprises a second NMOS tube MN2, a third NMOS tube MN3, a third current mirror PMOS tube MP3 and a fourth current mirror PMOS tube MP4, the output feedback resistor divided voltage VFB is connected with the grid electrode of the second NMOS tube MN2, the reference voltage VREF is connected with the grid electrode of the third NMOS tube MN3, the source electrodes of the second NMOS tube MN2 and the third NMOS tube MN3 are connected together and then connected with one end of a current source I3, and the other end of the current source I3 is grounded; the drain terminal of the third NMOS transistor MN3 is connected with the drain electrode of the fourth current mirror PMOS transistor MP4, and the drain terminal of the second NMOS transistor MN2 is connected with the drain electrode of the third current mirror PMOS transistor MP 3; the grid electrode and the drain electrode of the fourth current mirror PMOS transistor MP4 are in short circuit, and the grid electrode of the fourth current mirror PMOS transistor MP4 is connected to the grid electrode of the third current mirror PMOS transistor MP 3; the source of the third current mirror PMOS transistor MP3 is connected to the output voltage VDD or the power supply voltage VCC, and the source of the fourth current mirror PMOS transistor MP4 is connected to the output voltage VDD or the power supply voltage VCC; the grid electrode of the output voltage low-surge control tube MP2 is connected with the connection point of the second NMOS tube MN2 and the third current mirror PMOS tube MP3, the source electrode of the output voltage low-surge control tube MP2 is connected with the output voltage VDD, and the drain electrode of the output voltage low-surge control tube MP2 is connected with the connection point of the grid electrode of the output power tube MP1 and the grid electrode of the output voltage overshoot control tube MN 1; one end of the first compensation network is connected with the connection point of the second NMOS transistor MN2 and the third current mirror PMOS transistor MP3, and the other end of the first compensation network is grounded.
The LDO circuit with low quiescent current and fast response, wherein the first compensation network includes a first compensation resistor Rf1 and a first compensation capacitor Cf1, one end of the first compensation resistor Rf1 is connected to the output terminal of the feedback voltage amplifier AMP, the other end of the first compensation resistor Rf1 is connected to the other end of the first compensation capacitor Cf1, and one end of the first compensation capacitor Cf1 is grounded.
The LDO circuit with low quiescent current and fast response, wherein the second compensation network includes a second compensation resistor Rf2 and a second compensation capacitor Cf2, one end of the second compensation resistor Rf2 is connected to the gate of the output power transistor MP1, the other end of the second compensation resistor Rf2 is connected to the other end of the second compensation capacitor Cf2, and one end of the second compensation capacitor Cf2 is connected to the power supply voltage VCC.
The low quiescent current fast response LDO circuit, wherein, the output voltage feedback divider resistance network includes a first output voltage feedback divider resistance R1 and a second output voltage feedback divider resistance R2, one end of the first output voltage feedback divider resistance R1 connects to the output voltage VDD, and the other end of the first output voltage feedback divider resistance R1 connects to the other end of the second output voltage feedback divider resistance R2; one end of the second output voltage feedback divider resistor R2 is grounded.
The LDO circuit with low quiescent current and fast response is characterized in that the output voltage low-surge control tube MP2 is a PMOS tube.
The LDO circuit with low quiescent current and fast response is described, wherein the output voltage overshoot control transistor MN1 is an NMOS transistor.
The LDO circuit with low quiescent current and fast response, wherein the output power transistor MP1 is a PMOS transistor.
An SOC system comprising a low quiescent current fast response LDO circuit as claimed in any preceding claim.
The invention has the beneficial effects that: the invention provides a low quiescent current fast response LDO circuit and an SOC system, wherein a feedback voltage Amplifier (AMP) is adopted to amplify or reduce the difference value of a reference voltage VREF and a feedback voltage VFB of an output voltage; when the output voltage is low or low, the conduction of the output voltage low-surge control tube MP2 is weakened, the grid voltage of the output power tube MP1 is reduced, the driving current of the output power tube MP1 is increased, and the output voltage is quickly increased; when the output voltage overshoots, the output voltage of the amplifier is reduced, the conduction of the low-impact control tube MP2 is enhanced, the grid voltage of the output power tube MP1 is raised, and the output current of the output power tube MP1 is reduced; meanwhile, as the grid voltage of the output power tube MP1 is the same as the grid voltage potential of the overshoot control tube MN1, the rise of the grid voltage causes the overshoot control tube MN1 to discharge the output voltage VDD, and the output voltage is rapidly recovered to the set value; according to the scheme, the rapid load transient response of the output voltage of the LDO is realized through the output voltage low-surge control tube MP2 and the output voltage overshoot control tube MN 1; the realized circuit structure is simple, the branch current is completely used in the main loop, and the static current and the cost are hardly additionally increased; and the feedback voltage amplifier AMP only comprises a second NMOS tube MN2, a third NMOS tube MN3, a third current mirror PMOS tube MP3 and a fourth current mirror PMOS tube MP4, the circuit architecture is simple, and the requirement of simplifying the whole LDO circuit as far as possible is met while the LDO low quiescent current quick transient response is met.
Drawings
FIG. 1 is a schematic diagram of a low quiescent current fast response LDO circuit according to the present invention.
Fig. 2 is a schematic diagram of one embodiment of the feedback voltage amplifier of the present invention.
Detailed Description
The technical solutions in the embodiments of the present application will be clearly and completely described below with reference to the drawings in the embodiments of the present application, and it is obvious that the described embodiments are only a part of the embodiments of the present application, and not all of the embodiments. The components of the embodiments of the present application, generally described and illustrated in the figures herein, can be arranged and designed in a wide variety of different configurations. Thus, the following detailed description of the embodiments of the present application, presented in the accompanying drawings, is not intended to limit the scope of the claimed application, but is merely representative of selected embodiments of the application. All other embodiments, which can be derived by a person skilled in the art from the embodiments of the present application without making any creative effort, shall fall within the protection scope of the present application.
It should be noted that: like reference numbers and letters refer to like items in the following figures, and thus, once an item is defined in one figure, it need not be further defined and explained in subsequent figures. Meanwhile, in the description of the present application, the terms "first", "second", and the like are used only for distinguishing the description, and are not to be construed as indicating or implying relative importance.
As shown in fig. 1, a low quiescent current fast response LDO circuit includes a feedback voltage amplifier AMP, an output voltage undershoot control tube MP2, an output voltage overshoot control tube MN1, a first compensation network, a second compensation network, a first current source I1, a second current source I2, an output power tube MP1, an output voltage feedback divider resistance network, and an output capacitor CL of an internal voltage VDD;
the positive input end of the feedback voltage amplifier AMP is connected with the reference voltage VREF, and the negative input end of the feedback voltage amplifier AMP is connected with the output voltage feedback divider resistance network: amplifying the difference value between the reference voltage VREF and the output feedback resistor divided voltage VFB; the output end of the voltage-controlled rectifier is connected with the grid of an output voltage low-surge control tube MP 2;
the output voltage undershoot control tube MP2 has a gate connected to the output of the feedback voltage amplifier AMP, a source connected to the output voltage VDD, and a drain connected to the connection point of the gate of the output voltage overshoot control tube MN1 and the gate of the output power tube MP 1. The output voltage of the feedback voltage amplifier AMP is rapidly increased when the output voltage is low or low, the conduction capability of the output voltage low-surge control tube MP2 is weakened, the grid of the output power tube MP1 is rapidly pulled down, the driving capability of the output current is strengthened, and the output voltage VDD is rapidly increased to the set voltage;
the gate of the output voltage overshoot control tube MN1 is connected to the connection point of the drain of the output voltage overshoot control tube MP2 and the gate of the output power tube MP1, the source is grounded, and the drain is connected to the output voltage VDD: when the output voltage overshoots, the output voltage of the feedback voltage amplifier AMP is rapidly reduced, the conduction current of the output voltage undershoot control tube MP2 is rapidly increased, the grid voltage of the output power tube MP1 is rapidly raised, and the output current of the output power tube MP1 is reduced; meanwhile, the gate voltage of the output power tube MP1 is the same as the gate voltage of the output voltage overshoot control tube MN1, so that the output voltage overshoot control tube MN1 discharges the output voltage VDD, and the output voltage VDD rapidly returns to the set voltage;
one end of the first compensation network is connected with the output end of the feedback voltage amplifier, and the other end of the first compensation network is grounded: the first compensation network is used for providing a compensation zero point;
one end of the second compensation network is connected with a power supply voltage VCC, and the other end of the second compensation network is connected with the grid electrode of an output power tube MP 1: the second compensation network is used for providing another compensation zero point;
the connection point of the first current source I1 and the second current source I2 is connected to the gate of the output power transistor MP1, the other end of the first current source I1 is connected to the power supply voltage VCC, and the other end of the second current source I2 is grounded: the first current source I1 and the second current source I2 provide a stable operating point for the gate of the output power transistor MP 1;
the source of the output power transistor MP1 is connected to the power supply voltage VCC, the gate is connected to the connection point of the first current source I1 and the second current source I2, and the drain is connected to the output voltage VDD: the output power tube MP1 is used for controlling and generating an output voltage VDD to provide an output current;
one end of the output voltage feedback divider resistance network is connected with an output voltage VDD, and the other end of the output voltage feedback divider resistance network is grounded: the output voltage feedback voltage division resistor network is used for providing the divided voltage of the output voltage for the negative input end of the voltage amplifier AMP;
and one end of the output capacitor CL of the internal voltage VDD is connected with the output voltage VDD, and the other end of the output capacitor CL is grounded. The output capacitor CL of the internal voltage VDD is used to stabilize the output voltage and supply power to other internal modules, and provides a dominant pole P1= (RDSON// RL) × CL of the loop, where RDSON is the on-resistance of the output power transistor MP1, and RL is the output load resistance of the output voltage VDD.
In some specific embodiments, the first compensation network includes a first compensation resistor Rf1 and a first compensation capacitor Cf1, one end of the first compensation resistor Rf1 is connected to the output terminal of the feedback voltage amplifier AMP, the other end of the first compensation resistor Rf1 is connected to the other end of the first compensation capacitor Cf1, and one end of the first compensation capacitor Cf1 is grounded: the first compensation network is used to provide one compensation zero Z1= Rf1 × Cf 1.
In some specific embodiments, the second compensation network includes a second compensation resistor Rf2 and a second compensation capacitor Cf2, one end of the second compensation resistor Rf2 is connected to the gate of the output power transistor MP1, the other end of the second compensation resistor Rf2 is connected to the other end of the second compensation capacitor Cf2, and one end of the second compensation capacitor Cf2 is connected to the power supply voltage VCC: the second compensation network is used to provide another compensation zero Z2= Rf2 × Cf 2.
In some embodiments, the output voltage feedback voltage-dividing resistor network includes a first output voltage feedback voltage-dividing resistor R1 and a second output voltage feedback voltage-dividing resistor R2, one end of the first output voltage feedback voltage-dividing resistor R1 is connected to the output voltage VDD, and the other end of the first output voltage feedback voltage-dividing resistor R1 is connected to the other end of the second output voltage feedback voltage-dividing resistor R2; one end of the second output voltage feedback divider resistor R2 is grounded: the junction of the first output voltage feedback divider resistor R1 and the second output voltage feedback divider resistor R2 is connected to the negative input terminal of the feedback voltage amplifier AMP: the output voltage feedback voltage-dividing resistance network is used for providing the divided voltage of the output voltage for the negative input end of the voltage amplifier AMP.
The feedback voltage amplifier AMP amplifies or reduces the difference between the voltage VREF at the positive input end and the voltage VFB at the negative input end, the output voltage directly controls the grid electrode of the output voltage low-surge control tube MP2, and the conduction current of the output voltage low-surge control tube MP2 is enhanced or weakened according to the magnitude of the output voltage, so that the grid electrode voltage of the output power tube MP1 is controlled, the magnitude of the output current is adjusted, and the output voltage is stabilized; the output end node of the feedback voltage amplifier AMP introduces a high frequency pole P3= Cp3 Rp3 in the loop, wherein Cp3 is the sum of the capacitances connected to the output end of the feedback voltage amplifier AMP, and Rp3 is the sum of the resistances connected to the output end of the feedback voltage amplifier AMP.
In some embodiments, the feedback voltage amplifier AMP may be implemented by using different circuit architectures:
in fig. 2, the feedback voltage amplifier AMP includes a second NMOS transistor MN2, a third NMOS transistor MN3, a third current mirror PMOS transistor MP3, and a fourth current mirror PMOS transistor MP4, the output feedback resistor divided voltage VFB is connected to the gate of the second NMOS transistor MN2, the reference voltage VREF is connected to the gate of the third NMOS transistor MN3, the sources of the second NMOS transistor MN2 and the third NMOS transistor MN3 are connected together and then connected to one end of a current source I3, and the other end of the current source I3 is grounded; the drain terminal of the third NMOS transistor MN3 is connected with the drain electrode of the fourth current mirror PMOS transistor MP4, and the drain terminal of the second NMOS transistor MN2 is connected with the drain electrode of the third current mirror PMOS transistor MP 3; the grid electrode and the drain electrode of the fourth current mirror PMOS transistor MP4 are in short circuit, and the grid electrode of the fourth current mirror PMOS transistor MP4 is connected to the grid electrode of the third current mirror PMOS transistor MP 3; according to the magnitude of the output voltage VDD and the power voltage VCC, the source voltages of the third current mirror PMOS transistor MP3 and the fourth current mirror PMOS transistor MP4 can be connected to the output voltage VDD or the power voltage VCC; the grid electrode of the output voltage low-surge control tube MP2 is connected with the connection point of the second NMOS tube MN2 and the third current mirror PMOS tube MP3, the source electrode of the output voltage low-surge control tube MP2 is connected with the output voltage VDD, and the drain electrode of the output voltage low-surge control tube MP2 is connected with the connection point of the grid electrode of the output power tube MP1 and the grid electrode of the output voltage overshoot control tube MN 1; one end of the first compensation resistor Rf1 is connected to the connection point of the second NMOS transistor MN2 and the third current mirror PMOS transistor MP3, the other end of the first compensation resistor Rf1 is connected to the other end of the first compensation capacitor Cf1, and one end of the first compensation capacitor Cf1 is grounded.
Naturally, there are many other circuit architectures of the feedback voltage amplifier AMP, and those skilled in the art can make various corresponding changes and modifications according to the present invention without departing from the circuit function that can be realized by the present invention, and these corresponding changes and modifications should fall within the protection scope of the present invention.
The output voltage low-surge control tube MP2 enhances or slows down its own (i.e. the output voltage low-surge control tube MP 2) conducting capability according to the magnitude of the output voltage of the voltage feedback amplifier AMP: when the output voltage is too low or low, the conduction current of the output voltage low-surge control tube MP2 is reduced, the gate voltage of the output power tube MP1 is reduced, the output current is increased, and the output voltage is increased.
When the output voltage overshoots, the output voltage overshoot control tube MN1 reduces the output voltage of the voltage feedback amplifier AMP, increases the on-current of the output voltage undershoot control tube MP2, increases the gate voltage of the output voltage overshoot control tube MN1, discharges the output voltage, and restores the output voltage to the set voltage.
The current source I1 and the current source I2 provide a stable operating point for the output power transistor MP 1.
The output power tube MP1 provides an output current and an output voltage, and the gate thereof introduces a sub-pole P2= Cp2 Rp2 in the loop, where Cp2 is the sum of the capacitances connected to the gate of the output power tube MP1, and Rp2 is the sum of the resistances connected to the gate of the output power tube MP 1.
Wherein the first compensation network introduces a first compensation zero Z1= Rf1 × Cf1 in the loop.
Wherein the second compensation network introduces a second compensation zero Z2= Rf2 × Cf2 in the loop.
The output capacitor CL of the internal voltage VDD provides energy storage for the output node, which generates a dominant pole P1= (RDSON// RL) × CL in the loop, where RDSON is the on-resistance of the output power transistor MP1, and RL is the output load resistance.
The output voltage divider resistance network mainly divides the output voltage, outputs the feedback resistor divided voltage VFB to the negative input end of the feedback voltage amplifier AMP, and amplifies or reduces the difference value between the output voltage VFB and the reference voltage VREF at the positive input end of the feedback voltage amplifier AMP.
According to the technical scheme, the difference value between the reference voltage VREF and the output feedback resistor divided voltage VFB is amplified or reduced by the feedback voltage amplifier AMP, and the low-surge voltage control tube MP2 and the overshoot voltage control tube N1 are combined, so that the rapid load transient response of the LDO can be realized under the condition of low quiescent current.
The technical scheme also comprises an SOC system which comprises the low-quiescent-current fast-response LDO circuit.
In the embodiments provided in the present application, it should be understood that the disclosed apparatus and method may be implemented in other ways. The above-described embodiments of the apparatus are merely illustrative, and for example, the division of the units is only one logical division, and there may be other divisions when actually implemented, and for example, a plurality of units or components may be combined or integrated into another system, or some features may be omitted, or not executed. In addition, the shown or discussed mutual coupling or direct coupling or communication connection may be an indirect coupling or communication connection of devices or units through some communication interfaces, and may be in an electrical, mechanical or other form.
In addition, units described as separate parts may or may not be physically separate, and parts displayed as units may or may not be physical units, may be located in one place, or may be distributed on a plurality of network units. Some or all of the units can be selected according to actual needs to achieve the purpose of the solution of the embodiment.
Furthermore, the functional modules in the embodiments of the present application may be integrated together to form an independent part, or each module may exist separately, or two or more modules may be integrated to form an independent part.
In this document, relational terms such as first and second, and the like may be used solely to distinguish one entity or action from another entity or action without necessarily requiring or implying any actual such relationship or order between such entities or actions.
The above description is only an example of the present application and is not intended to limit the scope of the present application, and various modifications and changes may be made by those skilled in the art. Any modification, equivalent replacement, improvement and the like made within the spirit and principle of the present application shall be included in the protection scope of the present application.

Claims (8)

1. A low quiescent current fast response LDO circuit is characterized by comprising a feedback voltage Amplifier (AMP), an output voltage low-surge control tube (MP 2), an output voltage overshoot control tube (MN 1), a first compensation network, a second compensation network, a first current source I1, a second current source I2, an output power tube (MP 1), an output voltage feedback divider resistance network and an output Capacitor (CL) of an output voltage VDD;
the positive input end of the feedback voltage amplifier AMP is connected with a reference voltage VREF, the negative input end of the feedback voltage amplifier AMP is connected with an output voltage feedback divider resistance network, and the output end of the feedback voltage amplifier AMP is connected with the grid electrode of the output voltage low-surge control tube MP 2;
the output voltage undershoot control tube MP2 is provided with a grid electrode connected with the output end of the feedback voltage amplifier AMP, a source electrode connected with the output voltage VDD, and a drain electrode connected with the connection point of the grid electrode of the output voltage overshoot control tube MN1 and the grid electrode of the output power tube MP 1;
the gate of the output voltage overshoot control tube MN1 is connected with the connection point of the drain of the output voltage overshoot control tube MP2 and the gate of the output power tube MP1, the source is grounded, and the drain is connected with the output voltage VDD;
one end of the first compensation network is connected with the output end of the feedback voltage amplifier AMP, and the other end of the first compensation network is grounded; the first compensation network is used for providing a compensation zero point;
one end of the second compensation network is connected with a power supply voltage VCC, and the other end of the second compensation network is connected with the grid electrode of the output power tube MP 1; the second compensation network is used for providing another compensation zero point;
the connection point of one ends of the first current source I1 and the second current source I2 is connected with the grid of the output power tube MP1, the other end of the first current source I1 is connected with a power supply voltage VCC, and the other end of the second current source I2 is grounded;
the source of the output power tube MP1 is connected with a power supply voltage VCC, the grid is connected with the connection point of a first current source I1 and a second current source I2, and the drain is connected with an output voltage VDD;
one end of the output voltage feedback voltage-dividing resistance network is connected with an output voltage VDD, and the other end of the output voltage feedback voltage-dividing resistance network is grounded;
one end of the output capacitor CL for outputting the voltage VDD is connected with the output voltage VDD, and the other end of the output capacitor CL is grounded;
the feedback voltage amplifier AMP comprises a second NMOS tube MN2, a third NMOS tube MN3, a third current mirror PMOS tube MP3 and a fourth current mirror PMOS tube MP4, the grid electrode of the second NMOS tube MN2 is connected with an output voltage feedback divider resistance network, a reference voltage VREF is connected with the grid electrode of the third NMOS tube MN3, the source electrodes of the second NMOS tube MN2 and the third NMOS tube MN3 are connected together and then connected with one end of a current source I3, and the other end of the current source I3 is grounded; the drain of the third NMOS transistor MN3 is connected to the drain of the fourth current mirror PMOS transistor MP4, and the drain of the second NMOS transistor MN2 is connected to the drain of the third current mirror PMOS transistor MP 3; the grid electrode and the drain electrode of the fourth current mirror PMOS transistor MP4 are in short circuit, and the grid electrode of the fourth current mirror PMOS transistor MP4 is connected to the grid electrode of the third current mirror PMOS transistor MP 3; the source of the third current mirror PMOS transistor MP3 is connected to the output voltage VDD or the power supply voltage VCC, and the source of the fourth current mirror PMOS transistor MP4 is connected to the output voltage VDD or the power supply voltage VCC; the grid electrode of the output voltage low-impact control tube MP2 is connected with the connection point of the second NMOS tube MN2 and the third current mirror PMOS tube MP 3; one end of the first compensation network is connected with the connection point of the second NMOS transistor MN2 and the third current mirror PMOS transistor MP3, and the other end of the first compensation network is grounded.
2. The LDO circuit with low quiescent current and fast response of claim 1, wherein the first compensation network comprises a first compensation resistor Rf1 and a first compensation capacitor Cf1, one end of the first compensation resistor Rf1 is connected to the output terminal of the feedback voltage amplifier AMP, the other end of the first compensation resistor Rf1 is connected to the other end of the first compensation capacitor Cf1, and one end of the first compensation capacitor Cf1 is grounded.
3. The LDO circuit with low quiescent current and fast response of claim 1, wherein the second compensation network comprises a second compensation resistor Rf2 and a second compensation capacitor Cf2, one end of the second compensation resistor Rf2 is connected to the gate of the output power transistor MP1, the other end of the second compensation resistor Rf2 is connected to the other end of the second compensation capacitor Cf2, and one end of the second compensation capacitor Cf2 is connected to the power supply voltage VCC.
4. The LDO circuit with low quiescent current and fast response of claim 1, wherein the output voltage feedback voltage-dividing resistor network comprises a first output voltage feedback voltage-dividing resistor R1 and a second output voltage feedback voltage-dividing resistor R2, one end of the first output voltage feedback voltage-dividing resistor R1 is connected to the output voltage VDD, and the other end of the first output voltage feedback voltage-dividing resistor R1 is connected to the other end of the second output voltage feedback voltage-dividing resistor R2; one end of the second output voltage feedback divider resistor R2 is grounded.
5. The LDO circuit of claim 1, wherein the output voltage low-surge control transistor MP2 is a PMOS transistor.
6. The LDO circuit of claim 1, wherein said output voltage overshoot control transistor MN1 is an NMOS transistor.
7. The LDO circuit of claim 1, wherein the output power transistor MP1 is a PMOS transistor.
8. An SOC system comprising the low quiescent current fast response LDO circuit of any of claims 1 through 7.
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CN112152437A (en) * 2020-11-16 2020-12-29 深圳市芯天下技术有限公司 Method and circuit for inhibiting ripples and charge pump
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CN113760031B (en) * 2021-09-13 2023-09-01 苏州大学 Low quiescent current NMOS type full-integrated LDO circuit

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN104503531A (en) * 2015-01-14 2015-04-08 北京华强智连微电子有限责任公司 Low dropout regulator circuit of transient response enhancing on-chip capacitor
CN106873697A (en) * 2017-03-30 2017-06-20 西安邮电大学 A kind of fast response circuit and method for low pressure difference linear voltage regulator
CN108733118A (en) * 2018-05-31 2018-11-02 福州大学 A kind of high PSRR quick response LDO

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2008276566A (en) * 2007-04-27 2008-11-13 Toshiba Corp Constant voltage power supply circuit
KR102395603B1 (en) * 2016-01-11 2022-05-09 삼성전자주식회사 Voltage regulator for suppressing overshoot and undershoot, and devices including the same

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN104503531A (en) * 2015-01-14 2015-04-08 北京华强智连微电子有限责任公司 Low dropout regulator circuit of transient response enhancing on-chip capacitor
CN106873697A (en) * 2017-03-30 2017-06-20 西安邮电大学 A kind of fast response circuit and method for low pressure difference linear voltage regulator
CN108733118A (en) * 2018-05-31 2018-11-02 福州大学 A kind of high PSRR quick response LDO

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