CN111929566A - Wafer testing method, device and control equipment thereof - Google Patents
Wafer testing method, device and control equipment thereof Download PDFInfo
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- 238000012360 testing method Methods 0.000 title claims abstract description 41
- 239000000523 sample Substances 0.000 claims abstract description 125
- 238000005259 measurement Methods 0.000 claims abstract description 33
- 230000003287 optical effect Effects 0.000 claims abstract description 24
- 238000000034 method Methods 0.000 claims description 24
- 238000012216 screening Methods 0.000 claims description 10
- 238000012545 processing Methods 0.000 claims description 9
- 238000012876 topography Methods 0.000 claims description 7
- 230000033001 locomotion Effects 0.000 abstract description 14
- 238000010304 firing Methods 0.000 abstract description 7
- 230000003044 adaptive effect Effects 0.000 abstract description 2
- 239000004065 semiconductor Substances 0.000 abstract description 2
- 235000012431 wafers Nutrition 0.000 description 130
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- 238000010998 test method Methods 0.000 description 3
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- 238000004590 computer program Methods 0.000 description 2
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
- G01R31/28—Testing of electronic circuits, e.g. by signal tracer
- G01R31/282—Testing of electronic circuits specially adapted for particular applications not provided for elsewhere
- G01R31/2831—Testing of materials or semi-finished products, e.g. semiconductor wafers or substrates
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
- G01B11/00—Measuring arrangements characterised by the use of optical techniques
- G01B11/02—Measuring arrangements characterised by the use of optical techniques for measuring length, width or thickness
- G01B11/06—Measuring arrangements characterised by the use of optical techniques for measuring length, width or thickness for measuring thickness ; e.g. of sheet material
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
- G01R31/28—Testing of electronic circuits, e.g. by signal tracer
- G01R31/2851—Testing of integrated circuits [IC]
- G01R31/2886—Features relating to contacting the IC under test, e.g. probe heads; chucks
Abstract
The invention provides a wafer testing method, a wafer testing device and control equipment thereof, and belongs to the technical field of semiconductor testing. The wafer testing method comprises the following steps: acquiring the positions of all devices of the wafer and corresponding thickness values thereof through an optical thickness measuring unit; calculating the difference between the corresponding thickness value of each device position and the reference thickness; the reference thickness is one of the thickness values corresponding to the positions of the devices; controlling a probe of the probe station to move a corresponding compensation distance in a direction vertical to the wafer at a corresponding device position according to the difference value, and performing electrical measurement on the corresponding device position according to the fixed lower needle height; the fixed lower needle height is the distance between the device position corresponding to the reference thickness and the wafer of the needle head of the probe at the initial height. The probe of the probe station can perform adaptive compensation movement according to the thicknesses of different device positions of the wafer, so that the probe can keep good contact at different device positions on the wafer, and the phenomenon of poor contact or firing pin is avoided.
Description
Technical Field
The invention relates to the technical field of semiconductor testing, in particular to a wafer testing method, a wafer testing device and control equipment thereof.
Background
In the process of manufacturing the integrated circuit, testing the wafer of the integrated circuit is an important link, the quality and reliability of a finished product can be ensured through the wafer test, and the research and development time and the device manufacturing cost can be shortened in the research and development process.
Generally, a wafer test is performed by a probe station, and a triaxial mechanical arm of the probe station can drive a probe to move to different device positions along the surface of a wafer, and drive the probe to be pinpointed at a certain pinpoint height so as to make the probe in good contact with the surface of the wafer, so that the probe is used for performing electrical measurement on the wafer.
However, the conventional probe station needs to measure the thickness of the wafer after knowing the thickness of the wafer in advance, and the thickness data only has an average value, so that the local feature thickness of the wafer cannot be completely simulated. Therefore, at different device positions of the wafer, the thickness of the wafer is thicker or thinner, which easily causes the probe to damage the wafer due to too much contact or the contact is incomplete, so that the measurement is not accurate.
Disclosure of Invention
The invention aims to provide a wafer testing method, a wafer testing device and control equipment thereof, which can enable a probe of a probe station to perform adaptive compensation movement according to thicknesses of different device positions of a wafer, so that the probe can be kept in good contact with the wafer when the probe is used for measuring at different device positions on the wafer, and the phenomenon of firing pins or poor contact is avoided.
The embodiment of the invention is realized by the following steps:
in one aspect of the embodiments of the present invention, a wafer testing method is provided, including:
acquiring the positions of all devices of the wafer and corresponding thickness values thereof through an optical thickness measuring unit;
calculating the difference between the corresponding thickness value of each device position and the reference thickness; the reference thickness is one of the thickness values corresponding to the positions of the devices;
controlling a probe of the probe station to move a corresponding compensation distance in a direction vertical to the wafer at a corresponding device position according to the difference value, and performing electrical measurement on the corresponding device position according to the fixed lower needle height; the fixed lower needle height is the distance between the device position corresponding to the reference thickness and the wafer of the needle head of the probe at the initial height.
Optionally, the positions of the devices on the wafer and the corresponding thickness values thereof are obtained by acquiring coordinates of the positions of the devices on the wafer in a preset coordinate system and a surface topography image of the wafer through an optical thickness measurement unit, and calculating according to the coordinates and the surface topography image.
Optionally, the position of the device is marked by a coordinate value, and the thickness value, the difference value and the coordinate value are in one-to-one correspondence; controlling the probe of the probe station to move a corresponding compensation distance in the direction vertical to the wafer at a corresponding device position according to the difference value, and performing electrical measurement on the corresponding device position according to the fixed lower needle height, wherein the method comprises the following steps:
controlling the probe to move to a corresponding device position according to the coordinate value;
controlling the probe to move a corresponding compensation distance along a direction vertical to the wafer according to the difference value corresponding to the coordinate value;
and according to the fixed lower needle height, electrically measuring the position of the device corresponding to the coordinate value.
Optionally, before calculating the difference between the thickness value corresponding to each device position and the reference thickness, the method further includes:
and screening the minimum value of the thickness values, and taking the minimum value as a reference thickness.
Optionally, controlling the probe to move a corresponding compensation distance in a direction perpendicular to the wafer according to the difference corresponding to the coordinate values, including:
and controlling the probe to move a corresponding compensation distance along the direction away from the wafer according to the difference corresponding to the coordinate values.
Optionally, the device location is a center location of a corresponding device of the wafer.
In another aspect of the embodiments of the present invention, a wafer testing apparatus is provided, which includes:
the acquisition module is used for acquiring thickness values corresponding to the positions of all devices of the wafer through the optical thickness measurement unit;
the data processing module is used for calculating the difference between the thickness value corresponding to each device position and the reference thickness; the reference thickness is one of the thickness values corresponding to the positions of the devices;
the control measurement module is used for controlling the probe of the probe station to move a corresponding compensation distance in the direction vertical to the wafer at a corresponding device position according to the difference value and electrically measuring the corresponding device position according to the fixed probe descending height; the fixed lower needle height is the distance between the device position corresponding to the reference thickness and the wafer of the needle head of the probe at the initial height.
Optionally, the position of the device is marked by a coordinate value, and the thickness value, the difference value and the coordinate value are in one-to-one correspondence; the control measurement module includes:
the moving module is used for controlling the probe to move to a corresponding device position according to the coordinate value;
the compensation module is used for controlling the probe to move a corresponding compensation distance along the direction vertical to the wafer according to the difference value corresponding to the coordinate value;
and the measuring module is used for carrying out electrical measurement on the device position corresponding to the coordinate value according to the fixed lower needle height.
Optionally, the apparatus further comprises:
and the screening module is used for screening the minimum value in the thickness values, and taking the minimum value as the reference thickness.
Optionally, the compensation module is specifically configured to control the probe to move a corresponding compensation distance in a direction away from the wafer according to the difference corresponding to the coordinate value.
In another aspect of the embodiments of the present invention, a wafer test control apparatus is provided, which includes a processor, a storage medium and a bus, where the storage medium stores machine-readable instructions executable by the processor, and when the wafer test control apparatus is operated, the processor communicates with the storage medium through the bus, and the processor executes the machine-readable instructions to perform the wafer test method as above.
The embodiment of the invention has the beneficial effects that:
in the wafer testing method provided by the embodiment of the invention, firstly, the thickness value corresponding to each device position of the wafer is obtained through the optical thickness measuring unit, and the calculation is performed according to the thickness value and the reference thickness (one of the thickness values corresponding to each device position), so as to obtain the difference value between the thickness value corresponding to each device position and the reference thickness. The calculated difference can be used as a motion compensation for the probe station when placing the needle at the corresponding device position. And finally, controlling the probe to perform electrical measurement on the wafer according to the fixed probe descending height (the distance between the device position corresponding to the reference thickness and the wafer of the probe head at the initial height) so as to enable the actual moving height of the probe to be compensated and adjusted according to the thickness of the corresponding device position of the wafer, so that the probe cannot cause poor contact or firing pin due to different thicknesses of different device positions of the wafer, and the probe head of the probe is ensured to be in good contact with the surface of the wafer at the corresponding device position. Therefore, by the method, the probe can be well contacted with the wafer when the probe is used for measuring at different device positions on the wafer, and the firing pin or poor contact is avoided, so that the precision, reliability and safety of wafer testing can be improved.
Drawings
In order to more clearly illustrate the technical solutions of the embodiments of the present invention, the drawings needed to be used in the embodiments will be briefly described below, it should be understood that the following drawings only illustrate some embodiments of the present invention and therefore should not be considered as limiting the scope, and for those skilled in the art, other related drawings can be obtained according to the drawings without inventive efforts.
FIG. 1 is a flowchart illustrating a wafer testing method according to an embodiment of the present invention;
FIG. 2 is a second flowchart illustrating a wafer testing method according to an embodiment of the present invention;
FIG. 3 is a schematic structural diagram of a wafer test apparatus according to an embodiment of the present invention;
FIG. 4 is a second schematic structural diagram of a wafer testing apparatus according to an embodiment of the present invention;
fig. 5 is a schematic structural diagram of a wafer test control apparatus according to an embodiment of the present invention.
Detailed Description
In order to make the objects, technical solutions and advantages of the embodiments of the present invention clearer, the technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the drawings in the embodiments of the present invention, and it is obvious that the described embodiments are some, but not all, embodiments of the present invention. The components of embodiments of the present invention generally described and illustrated in the figures herein may be arranged and designed in a wide variety of different configurations.
Thus, the following detailed description of the embodiments of the present invention, presented in the figures, is not intended to limit the scope of the invention, as claimed, but is merely representative of selected embodiments of the invention. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.
It should be noted that: like reference numbers and letters refer to like items in the following figures, and thus, once an item is defined in one figure, it need not be further defined and explained in subsequent figures.
In the description of the present invention, it should be noted that the terms "center", "upper", "lower", and the like refer to the orientation or positional relationship based on the orientation or positional relationship shown in the drawings, or the orientation or positional relationship which the product of the present invention is conventionally placed in use, and are only for convenience of describing the present invention and simplifying the description, but do not indicate or imply that the device or element referred to must have a specific orientation, be constructed in a specific orientation, and be operated, and thus, should not be construed as limiting the present invention.
In the description of the present invention, it should also be noted that, unless otherwise explicitly specified or limited, the terms "disposed," "mounted," "connected," and "connected" are to be construed broadly and may, for example, be fixedly connected, detachably connected, or integrally connected; can be mechanically or electrically connected; they may be connected directly or indirectly through intervening media, or they may be interconnected between two elements. The specific meanings of the above terms in the present invention can be understood in specific cases to those skilled in the art.
An embodiment of the present invention provides a wafer testing method, as shown in fig. 1, including:
s101: and acquiring the positions of all devices of the wafer and the corresponding thickness values thereof through an optical thickness measuring unit.
Generally, in practical applications, the thickness value corresponding to each device position of the wafer can be measured by the optical thickness measurement unit. The terminal equipment for executing the method can receive the positions of all devices of the wafer and the corresponding thickness values thereof transmitted by the optical thickness measuring unit in a wireless or wired mode. And the positions of all devices of the wafer and the corresponding thickness values of the devices can be obtained through a storage chip of the optical thickness measuring unit. The wired mode may be a Universal Serial Bus (USB) transmission mode, or a transmission mode of other types of interfaces. The Wireless mode may be any type of Wireless transmission mode, such as Wireless-Fidelity (Wireless-Fidelity), bluetooth, infrared, or mobile communication network.
In other embodiments, the positions of the devices of the wafer and the thickness values corresponding to the positions of the devices of the wafer, which are measured by the optical thickness measurement unit, may also be imported into a terminal device executing the method in the form of a table control or a document control, so that the terminal device can obtain the positions of the devices of the wafer and the thickness values corresponding to the positions of the devices of the wafer.
S102: and calculating the difference between the thickness value corresponding to each device position and the reference thickness.
The reference thickness is one of the thickness values corresponding to the positions of the devices.
In practical applications, the reference thickness may be selected from a minimum value or a maximum value of the thickness values corresponding to each device position, and of course, other values of the thickness values corresponding to each device position may be selected in other embodiments of the present invention, which is not limited herein.
S103: and controlling the probe of the probe station to move a corresponding compensation distance in the direction vertical to the wafer at the corresponding device position according to the difference value, and performing electrical measurement on the corresponding device position according to the fixed lower needle height.
The fixed lower needle height is the distance between the device position corresponding to the reference thickness and the wafer of the needle head of the probe at the initial height.
It should be noted that the compensation distance of the probe movement is equal to the absolute value of the difference between the thickness value corresponding to the device position and the reference thickness, thereby achieving the effect of compensating for the thickness difference.
Because the fixed lower needle height is set according to the reference thickness, the probe can be in good contact with the wafer when being fixed at the device position corresponding to the reference thickness so as to realize accurate measurement, therefore, the probe is subjected to movement compensation at other device positions of the wafer according to the difference between the corresponding thickness value and the reference thickness, and the probe can be in good contact with the wafer at different device positions after the movement compensation. The direction of movement of the probe during motion compensation is related to the selected reference thickness and the positive or negative of the difference.
For example, when the reference thickness is the maximum value of the thickness value corresponding to each device position, the movement direction of the probe is the direction toward the wafer when the probe performs movement compensation at the corresponding device position, so that the probe can move toward the wafer at other device positions with a thickness smaller than the reference thickness to compensate for a thickness difference, and the probe can be subsequently and well contacted with the wafer according to a fixed probe descending height, thereby avoiding a pin or poor contact.
For another example, when the reference thickness is a median (or other value) of the thickness values corresponding to the respective device positions, and the probe is moved and compensated at the corresponding device position, if the difference is positive (i.e., the thickness value corresponding to the device position is greater than the reference thickness), the probe is moved and compensated in a direction away from the wafer, and if the difference is negative (i.e., the thickness value corresponding to the device position is less than the reference thickness), the probe is moved and compensated in a direction closer to the wafer.
It should be noted that, in practical applications, if there are a plurality of wafers to be tested, the steps S101 and S102 may be performed for each wafer, and each wafer is marked, and then S103 is performed for different wafers in sequence. Of course, the above steps of the method may be performed on different wafers sequentially, which is not limited herein.
In the wafer testing method provided by the embodiment of the invention, the thickness value corresponding to each device position of the wafer is firstly obtained, and calculation is performed according to the thickness value and the reference thickness (one of the thickness values corresponding to each device position) so as to obtain the difference value between the thickness value corresponding to each device position and the reference thickness. The calculated difference can be used as a motion compensation for the probe station when placing the needle at the corresponding device position. And finally, controlling the probe to perform electrical measurement on the wafer according to the fixed probe descending height (the distance between the device position corresponding to the reference thickness and the wafer of the probe head at the initial height) so as to enable the actual moving height of the probe to be compensated and adjusted according to the thickness of the corresponding device position of the wafer, so that the probe cannot cause poor contact or firing pin due to different thicknesses of different device positions of the wafer, and the probe head of the probe is ensured to be in good contact with the surface of the wafer at the corresponding device position. Therefore, by the method, the probe can be well contacted with the wafer when the probe is used for measuring at different device positions on the wafer, and the firing pin or poor contact is avoided, so that the precision, reliability and safety of wafer testing can be improved.
Optionally, the positions of the devices on the wafer and the corresponding thickness values thereof are obtained by acquiring coordinates of the positions of the devices on the wafer in a preset coordinate system and a surface topography image of the wafer through an optical thickness measurement unit, and calculating according to the coordinates and the surface topography image.
Illustratively, the optical thickness measuring unit can comprise a sample placing platform, a host computer, an image camera connected with the host computer and a measuring microscope. The host of the optical thickness measuring unit can measure the wafer placed on the sample placing platform through the image camera and the measuring microscope so as to obtain coordinate values corresponding to the positions of all devices on the wafer and a surface appearance image of the wafer. And then the host of the optical thickness measuring unit can calculate the thickness according to the coordinate value corresponding to the position of each device and the surface topography image of the coordinate position to obtain a corresponding thickness value, and send the obtained position of each device and the corresponding thickness value. The preset coordinate system is a built-in coordinate system of the optical thickness measuring unit and can correspond to the built-in coordinate system of the probe station, so that coordinate conversion for aligning coordinates is avoided, and efficiency is improved.
In the embodiment, the wafer is measured by the optical thickness measuring unit to obtain the positions of the devices and the corresponding thickness values, so that the method is convenient and quick, and has lower cost.
Optionally, the device position is marked by a coordinate value, and the thickness value corresponds to the coordinate value one to one. Accordingly, when the optical thickness measuring unit is used for measuring the thickness of different device positions, the coordinate marking can be carried out on each device position at the same time. The coordinate system can adopt the coordinate system of the probe station so as to avoid the fact that subsequently acquired coordinate values of the device position need to be converted according to the coordinate system of the probe station, and therefore efficiency is improved.
It should be noted that, since the thickness value of each device position corresponds to the coordinate value one by one, the difference between the calculated thickness value and the reference thickness also corresponds to the coordinate value of the corresponding device position.
For example, in practical applications, the coordinate values of the positions of the devices and the corresponding thickness values measured by the optical thickness measurement unit may be imported into a terminal device executing the method in a manner of a document control including a corresponding relationship between the coordinate values and the thickness values.
Accordingly, controlling the probe of the probe station to move a corresponding compensation distance in a direction perpendicular to the wafer at the corresponding device position according to the difference value, and performing an electrical measurement on the corresponding device position according to the fixed lower pin height, as shown in fig. 2, may include:
s201: and controlling the probe to move to a corresponding device position according to the coordinate value.
S202: and controlling the probe to move a corresponding compensation distance along the direction vertical to the wafer according to the difference corresponding to the coordinate values.
S203: and according to the fixed lower needle height, electrically measuring the position of the device corresponding to the coordinate value.
The positions of all devices of the wafer are marked through the coordinate values, the thickness values correspond to the coordinate values, the probe of a follow-up control probe station can be moved to the positions of the corresponding devices more accurately and conveniently, the difference between the thickness values corresponding to the positions of the corresponding devices and the reference thickness can be inquired more conveniently, and therefore the efficiency of the probe in moving compensation is improved.
Optionally, before calculating the difference between the thickness value corresponding to each device position and the reference thickness, the method further includes:
and screening the minimum value of the thickness values, and taking the minimum value as a reference thickness.
Correspondingly, controlling the probe to move a corresponding compensation distance in a direction perpendicular to the wafer according to the difference corresponding to the coordinate values may include:
and controlling the probe to move a corresponding compensation distance along the direction away from the wafer according to the difference corresponding to the coordinate values.
By screening, the minimum value in the thickness values corresponding to the positions of the devices is used as the reference thickness, so that the movement directions of the probes are consistent during movement compensation of the probes without considering the positive and negative of the difference between the thickness values and the reference thickness when the probes are subsequently controlled to move for compensation, the control logic complexity of controlling the probes to move for compensation is reduced, and the working efficiency is improved.
Optionally, the device location is a center location of a corresponding device of the wafer.
The central positions of all devices of the wafer are adopted to represent the positions of the devices of the corresponding devices, so that the device position positioning standards of all the devices can be consistent, and errors generated when the probe is subsequently controlled to move to the positions of the corresponding devices of the wafer are reduced. Of course, in practical applications, the device positions of the devices may also be represented by other points of each device, which is not limited herein.
In another aspect of the embodiments of the present invention, there is provided a wafer testing apparatus, as shown in fig. 3, including:
an obtaining module 301, configured to obtain, by an optical thickness measuring unit, a thickness value corresponding to each device position of a wafer;
a data processing module 302, configured to calculate a difference between the thickness value corresponding to each device position and the reference thickness; the reference thickness is one of the thickness values corresponding to the positions of the devices;
the control measurement module 303 is configured to control the probe of the probe station to move a corresponding compensation distance in a direction perpendicular to the wafer at a corresponding device position according to the difference value, and perform electrical measurement on the corresponding device position according to the fixed probe descending height; the fixed lower needle height is the distance between the device position corresponding to the reference thickness and the wafer of the needle head of the probe at the initial height.
The wafer testing apparatus provided by the embodiment of the invention includes an obtaining module 301, a data processing module 302 and a control measuring module 303. The thickness value corresponding to each device position of the wafer may be obtained by the obtaining module 301 using the optical thickness measuring unit, and the data processing module 302 may calculate according to the thickness value and the reference thickness (one of the thickness values corresponding to each device position) to obtain a difference between the thickness value corresponding to each device position and the reference thickness. The calculated difference can be used as a motion compensation for the probe station when placing the needle at the corresponding device position. Then, the probe of the probe station can be controlled to move a corresponding compensation distance in the direction perpendicular to the wafer at a corresponding device position by controlling the measurement module 303 according to the difference, so that the needle head position of the probe can be compensated according to the reference thickness, and finally the probe is controlled to perform electrical measurement on the wafer according to the fixed needle descending height (the distance between the device position corresponding to the reference thickness and the wafer at the needle head of the probe at the initial height), so that the actual moving height of the probe can be compensated and adjusted according to the thickness of the corresponding device position of the wafer, the probe cannot be in poor contact or striker due to the difference of the thicknesses of different device positions of the wafer, and the needle head of the probe is ensured to be in good contact with the surface of the wafer at the corresponding device position. Therefore, by the method, the probe can be well contacted with the wafer when the probe is used for measuring at different device positions on the wafer, and the firing pin or poor contact is avoided, so that the precision, reliability and safety of wafer testing can be improved.
Optionally, the position of the device is marked by a coordinate value, and the thickness value, the difference value and the coordinate value are in one-to-one correspondence; the control measurement module 303, as shown in fig. 4, may include:
the moving module 401 is used for controlling the probe to move to a corresponding device position according to the coordinate value;
a compensation module 402, configured to control the probe to move a corresponding compensation distance in a direction perpendicular to the wafer according to the difference corresponding to the coordinate value;
and a measuring module 403, configured to perform electrical measurement on the device position corresponding to the coordinate value according to the fixed lower needle height.
Optionally, the apparatus further comprises:
and the screening module is used for screening the minimum value in the thickness values, and taking the minimum value as the reference thickness.
Optionally, the compensation module 402 is specifically configured to control the probe to move a corresponding compensation distance in a direction away from the wafer according to the difference corresponding to the coordinate value.
It can be clearly understood by those skilled in the art that, for convenience and brevity of description, the specific working process of the apparatus described above may refer to the corresponding process of the method in the foregoing method embodiment, and is not described in detail herein.
The embodiment of the invention also provides a wafer test control device, which can be a computer, a probe station controller and the like capable of executing the wafer test method.
As shown in fig. 5, the wafer test control apparatus may include a processor 31, a storage medium 32 and a bus (not shown in the figure), the storage medium 32 stores machine-readable instructions executable by the processor 31, when the wafer test control apparatus is operated, the processor 31 communicates with the storage medium 32 through the bus, and the processor 31 executes the machine-readable instructions to execute the wafer test method as described above. The specific implementation and technical effects are similar, and are not described herein again.
For illustrative purposes, only one processor is depicted in the wafer test control apparatus described above. However, it should be noted that the thermal infrared image-based temperature acquisition device in the present invention may further include a plurality of processors, and thus the steps performed by one processor described in the present invention may also be performed by a plurality of processors in combination or individually. For example, if the wafer test control equipment based processor performs steps a and B, it should be understood that steps a and B may be performed by two different processors together or performed separately in one processor. For example, a first processor performs step a and a second processor performs step B, or the first processor and the second processor perform steps a and B together, etc.
In some embodiments, a processor may include one or more processing cores (e.g., a single-core processor (S) or a multi-core processor (S)). Merely by way of example, a Processor may include a Central Processing Unit (CPU), an Application Specific Integrated Circuit (ASIC), an Application Specific Instruction Set Processor (ASIP), a Graphics Processing Unit (GPU), a Physical Processing Unit (PPU), a Digital Signal Processor (DSP), a Field Programmable Gate Array (FPGA), a Programmable Logic Device (PLD), a controller, a microcontroller Unit, a Reduced Instruction Set computer (Reduced Instruction Set computer), a microprocessor, or the like, or any combination thereof.
An embodiment of the present invention further provides a storage medium, where a computer program is stored on the storage medium, and the computer program is executed by a processor to execute the wafer testing method. The specific implementation and technical effects are similar, and are not described herein again.
Alternatively, the storage medium may be a U disk, a removable hard disk, a ROM, a RAM, a magnetic or optical disk, or the like.
The above description is only a preferred embodiment of the present invention and is not intended to limit the present invention, and various modifications and changes may be made by those skilled in the art. Any modification, equivalent replacement, or improvement made within the spirit and principle of the present invention should be included in the protection scope of the present invention.
Claims (11)
1. A wafer testing method, comprising:
acquiring the positions of all devices of the wafer and corresponding thickness values thereof through an optical thickness measuring unit;
calculating the difference between the thickness value corresponding to each device position and the reference thickness; the reference thickness is one of the thickness values corresponding to the positions of the devices;
controlling a probe of a probe station to move a corresponding compensation distance in a direction vertical to the wafer at a corresponding device position according to the difference value, and performing electrical measurement on the corresponding device position according to the fixed probe descending height; and the fixed lower needle height is the distance between the device position corresponding to the reference thickness and the wafer of the needle head of the probe at the initial height.
2. The method of claim 1, wherein the device positions of the wafer and the corresponding thickness values thereof are obtained by the optical thickness measurement unit obtaining coordinates of the device positions on the wafer in a preset coordinate system and a surface topography image of the wafer, and calculating according to the coordinates and the surface topography image.
3. The method of claim 1, wherein the device position is marked with coordinate values, and the thickness value and the difference value are in one-to-one correspondence with the coordinate values, respectively; the controlling the probe of the probe station to move a corresponding compensation distance in the direction perpendicular to the wafer at the corresponding device position according to the difference value, and performing electrical measurement on the corresponding device position according to the fixed lower needle height, including:
controlling the probe to move to the corresponding device position according to the coordinate value;
controlling the probe to move a corresponding compensation distance along a direction vertical to the wafer according to the difference corresponding to the coordinate value;
and performing electrical measurement on the device position corresponding to the coordinate value according to the fixed pin descending height.
4. The method of claim 3, wherein prior to calculating the difference between the thickness value corresponding to each device location and the reference thickness, the method further comprises:
and screening the minimum value of the thickness values, and taking the minimum value as the reference thickness.
5. The method of claim 4, wherein controlling the probe to move a corresponding compensation distance in a direction perpendicular to the wafer according to the difference corresponding to the coordinate value comprises:
and controlling the probe to move a corresponding compensation distance along the direction away from the wafer according to the difference corresponding to the coordinate value.
6. The method of any of claims 1 to 5, wherein the device location is a center location of a corresponding device of the wafer.
7. A wafer test apparatus, comprising:
the acquisition module is used for acquiring the positions of all devices of the wafer and the corresponding thickness values thereof through the optical thickness measurement unit;
the data processing module is used for calculating to obtain a difference value between the thickness value corresponding to each device position and the reference thickness; the reference thickness is one of thickness values corresponding to the positions of the devices;
the control measurement module is used for controlling a probe of the probe station to move a corresponding compensation distance in the direction vertical to the wafer at the corresponding device position according to the difference value and performing electrical measurement on the corresponding device position according to the fixed probe descending height; and the fixed lower needle height is the distance between the device position corresponding to the reference thickness and the wafer of the needle head of the probe at the initial height.
8. The apparatus of claim 7, wherein the device position is marked with coordinate values, and the thickness value and the difference value are in one-to-one correspondence with the coordinate values; the control measurement module includes:
the moving module is used for controlling the probe to move to the corresponding device position according to the coordinate value;
the compensation module is used for controlling the probe to move a corresponding compensation distance along the direction vertical to the wafer according to the difference value corresponding to the coordinate value;
and the measuring module is used for electrically measuring the position of the device corresponding to the coordinate value according to the fixed lower needle height.
9. The apparatus of claim 8, wherein the apparatus further comprises:
and the screening module is used for screening the minimum value in the thickness values, and taking the minimum value as the reference thickness.
10. The apparatus of claim 9, wherein the compensation module is specifically configured to control the probe to move a corresponding compensation distance in a direction away from the wafer according to the difference corresponding to the coordinate value.
11. A wafer test control apparatus comprising a processor, a storage medium and a bus, the storage medium storing machine readable instructions executable by the processor, the processor and the storage medium communicating over the bus when the wafer test control apparatus is in operation, the processor executing the machine readable instructions to perform the method of any one of claims 1 to 6.
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