CN111928821A - Method for judging whether scanning electron microscope machine is inclined - Google Patents
Method for judging whether scanning electron microscope machine is inclined Download PDFInfo
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- CN111928821A CN111928821A CN202010802383.XA CN202010802383A CN111928821A CN 111928821 A CN111928821 A CN 111928821A CN 202010802383 A CN202010802383 A CN 202010802383A CN 111928821 A CN111928821 A CN 111928821A
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- scanning electron
- electron microscope
- mark
- bearing table
- test wafer
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01C—MEASURING DISTANCES, LEVELS OR BEARINGS; SURVEYING; NAVIGATION; GYROSCOPIC INSTRUMENTS; PHOTOGRAMMETRY OR VIDEOGRAMMETRY
- G01C9/00—Measuring inclination, e.g. by clinometers, by levels
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/02—Details
- H01J37/244—Detectors; Associated components or circuits therefor
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/26—Electron or ion microscopes; Electron or ion diffraction tubes
- H01J37/28—Electron or ion microscopes; Electron or ion diffraction tubes with scanning beams
Abstract
The invention provides a method for judging whether a scanning electron microscope machine table inclines, which comprises the steps of placing a test wafer on a bearing table, wherein at least one mark is arranged on the test wafer; controlling the bearing table to incline within a set angle range around the center of the bearing table, and simultaneously, obtaining the line width of the mark by the detector when the bearing table is at different inclination angles; establishing an actual relation curve of the line width of the mark and the inclination angle of the bearing table; and comparing the actual relation curve with the theoretical standard relation curve to judge whether the scanning electron microscope machine is inclined. The invention can objectively and quantifiably scan whether the electronic microscope platform inclines or not. The method avoids the phenomenon that the measurement precision of the scanning electron microscope is influenced due to the fact that the judgment results are different due to the difference of subjective judgment of different technicians, and then the measurement error occurs.
Description
Technical Field
The invention relates to the technical field of semiconductor manufacturing, in particular to a method for judging whether a scanning electron microscope machine is inclined.
Background
Currently, in semiconductor device fabrication, a scanning electron microscope (CDSEM) is typically used to measure the line width (CD) of a pattern fabricated on a wafer. With the development of semiconductor manufacturing technology, the size of semiconductor devices is getting smaller. In order to ensure the accuracy of the pattern on the photoetched wafer, after the pattern on the photomask is transferred onto the wafer through exposure and development, the wafer with the pattern is placed on a scanning electron microscope machine, a control system of the scanning electron microscope controls the scanning electron microscope machine to measure the line width of the photoetched pattern, and the scanning electron microscope machine feeds back the line width of the obtained pattern to the control system of the scanning electron microscope to confirm whether the line width of the pattern meets the design requirement of a large-scale Integrated Circuit (IC) or not, so that the photoetching accuracy is known.
The working principle of the scanning electron microscope is as follows: an electron beam emitted from an electron emission gun is converged by a condenser lens, passes through an Aperture (Aperture), reaches a pattern of a measurement object, captures emitted secondary electrons by a detector, converts the electrons into an electric signal, obtains a two-dimensional electron scan image, generates a characteristic curve corresponding to the image, and measures a line width of the measurement object with high accuracy based on the electron scan image and the characteristic curve corresponding to the image.
The measurement precision of the scanning electron microscope is directly related to the actual quality of a product, and when the scanning electron microscope machine is judged to be inclined, a measured image is out of focus and blurred due to poor conditions of the scanning electron microscope machine, so that the data accuracy of subsequent line width measurement is directly influenced. Whether the scanning electron microscope machine is inclined or not is judged by artificially judging whether an image is fuzzy or not by technicians at present, and due to differences in subjective judgment of different technicians, the judgment result can be different, so that the measurement error can be caused, and the measurement precision of the scanning electron microscope is influenced.
Therefore, the industry has been searching for an objective and quantifiable method for determining whether the stage of the sem is tilted, so as to avoid the problem that the measurement accuracy of the sem is affected due to differences in the determination results caused by differences in subjective determinations of different technicians.
Disclosure of Invention
The invention aims to provide a method for judging whether a scanning electron microscope machine is inclined, which can objectively and quantifiably judge whether the scanning electron microscope machine is inclined.
In order to achieve the above object, the present invention provides a method for determining whether a stage of a scanning electron microscope is tilted, the stage including a detector and a stage, the method for determining whether the stage of the scanning electron microscope is tilted comprising:
placing a test wafer on a bearing table, wherein at least one mark is arranged on the test wafer;
controlling the bearing table to incline within a set angle range around the center of the bearing table, and simultaneously, obtaining the line width of the mark by the detector when the bearing table is at different inclination angles;
establishing an actual relation curve of the line width of the mark and the inclination angle of the bearing table;
and comparing the actual relation curve with the theoretical relation curve to judge whether the scanning electron microscope platform is inclined.
Optionally, comparing the actual relationship curve with the theoretical standard relationship curve;
if the actual relation curve is superposed with the theoretical standard relation curve, judging that the scanning electron microscope machine does not incline;
and if the actual relation curve is not coincident with the theoretical standard relation curve, judging that the scanning electron microscope machine is inclined.
Optionally, comparing the plurality of actual relationship curves with a theoretical standard relationship curve;
if the actual relation curves are superposed with the theoretical standard relation curves, judging that the scanning electron microscope machine table is not inclined;
and if the at least two actual relation curves are not coincident with the theoretical standard relation curve, judging that the scanning electron microscope machine is inclined.
Optionally, when it is determined that the scanning electron microscope stage is inclined, the scanning electron microscope stage is maintained.
Optionally, the mark includes at least one trench, and the line width is a width of the trench or a distance between adjacent trenches.
Optionally, the marks are circumferentially distributed along a center of the test wafer.
Optionally, the test wafer includes two pairs of marks perpendicular to each other.
Optionally, the test wafer further includes a protection layer covering the upper surface of the test wafer, the side surface and the bottom surface of the trench.
Optionally, the set angle range is 85 degrees to 95 degrees.
Optionally, the plummer moves at a uniform speed around its center within the set angle range, and the detector acquires the line width of the mark at set intervals.
Optionally, the detector measures the mark a plurality of times, and uses an average value of the plurality of measurement results as the line width of the mark.
The invention provides a method for judging whether a scanning electron microscope machine is inclined, which comprises the steps of placing a test wafer on a bearing table, wherein at least one mark is arranged on the test wafer; controlling the bearing table to incline within a set angle range around the center of the bearing table, and simultaneously, obtaining the line width of the mark by the detector when the bearing table is at different inclination angles; establishing an actual relation curve of the line width of the mark and the inclination angle of the bearing table; and comparing the actual relation curve with the theoretical standard relation curve to judge whether the scanning electron microscope machine is inclined. The invention can objectively and quantifiably judge whether the scanning electron microscope machine is inclined or not, thereby avoiding the problem that the judgment result has difference due to the difference of subjective judgment of different technicians, further reducing the measurement error and improving the measurement precision of the scanning electron microscope.
Drawings
FIG. 1 is a flowchart illustrating a method for determining whether a stage of a scanning electron microscope is tilted according to an embodiment of the present invention;
FIG. 2 is a first schematic view of a scanning electron microscope for measuring line width according to an embodiment of the present invention;
FIG. 3 is a second schematic view of a scanning electron microscope for measuring line width according to an embodiment of the present invention;
FIG. 4 is a comparison of an actual relationship curve and a theoretical standard relationship curve provided in an embodiment of the present invention;
FIG. 5 is a distribution diagram of marks on a test wafer according to an embodiment of the present invention;
FIG. 6 is another distribution diagram of marks on a test wafer according to an embodiment of the present invention;
FIG. 7 is a schematic structural diagram of a tag provided in an embodiment of the present invention;
wherein the reference numbers are as follows:
100-electron emission gun;
200-testing the wafer; 201-a substrate; 202-an oxide layer; 203-a polysilicon layer; 204-a protective layer; 210-mark; 211-a first mark; 212-a second marker; 213-third label; 214-fourth label; 220-center point;
300-carrying table.
Detailed Description
The following describes in more detail embodiments of the present invention with reference to the schematic drawings. The advantages and features of the present invention will become more apparent from the following description. It is to be noted that the drawings are in a very simplified form and are not to precise scale, which is merely for the purpose of facilitating and distinctly claiming the embodiments of the present invention.
Fig. 1 is a flowchart of a method for determining whether a stage of a scanning electron microscope is tilted according to this embodiment. As shown in fig. 1, the apparatus includes a detector and a carrying stage, and the method for determining whether the scanning electron microscope apparatus is tilted includes:
step S1: placing a test wafer on a bearing table, wherein at least one mark is arranged on the test wafer;
step S2: controlling the bearing table to incline within a set angle range around the center of the bearing table, and simultaneously, obtaining the line width of the mark by the detector when the bearing table is at different inclination angles;
step S3: establishing an actual relation curve of the line width of the mark and the inclination angle of the bearing table;
step S4: and comparing the actual relation curve with the theoretical standard relation curve to judge whether the scanning electron microscope machine is inclined.
The bearing table rotates around the center of the bearing table in an inclined mode within a set angle range, so that the detector can obtain the line width of the mark on the test wafer when the bearing table is at different inclined angles. And establishing an actual relation curve between the line width measured by the detector and the inclination angle of the corresponding bearing table, and comparing the actual relation curve with a theoretical standard curve. So as to determine whether the scanning electron microscope stage is inclined. Therefore, the invention can objectively and quantifiably judge whether the scanning electron microscope machine is inclined, and avoids the phenomenon that the measurement precision of the scanning electron microscope is influenced due to the occurrence of measurement errors caused by the difference of the judgment results of different technicians in subjective judgment.
The following describes the method for determining whether the stage of the scanning electron microscope is tilted in more detail with reference to the accompanying drawings.
Fig. 2 is a first schematic view of a line width measured by a scanning electron microscope according to the embodiment of the present invention, and fig. 3 is a second schematic view of a line width measured by a scanning electron microscope according to the embodiment of the present invention.
Referring to fig. 2, the scanning electron microscope apparatus includes a supporting stage 300 and an electron emission gun 100. The susceptor 300 is used for carrying the test wafer 200, and the susceptor 300 further includes an X-axis. The test wafer 200 has marks 210, and a detector in the electron emission gun 100 can collect electrons reflected from the surface of the test wafer 200 to form an electron scan image, so as to obtain the line width of the marks 210.
For example, when the axis of the electron gun 100 is at an angle of 90 degrees with respect to the X-axis, the width of the mark 210 on the test wafer 200 is 2.9 micrometers, i.e., the measured line width is 2.9 micrometers.
Referring to fig. 3, when the included angle between the axis of the electron gun 100 and the X-axis on the susceptor 300 is 120 degrees, the width of the mark 210 on the test wafer 200 is 2.46 micrometers, i.e., the measured line width is 2.46 micrometers.
Therefore, when the scanning electron microscope measures the width of the mark 210, the included angle between the axis of the electron emission gun 100 and the X-axis on the supporting stage 300 changes, which may cause the measured line width to be inconsistent. The same width of the mark 210, measured at different tilt angles, will result in different measured values. In addition, the line width which can be measured at different inclination angles can be calculated, and a theoretical standard relation curve of the line width changing along with the corresponding inclination angle is established. The theoretical standard relation curve can be used as a reference line for comparison.
Fig. 4 is a comparison graph of the actual relationship curve and the theoretical standard relationship curve provided in this embodiment. Referring to fig. 2 to 4, if the actual relationship curve coincides with the theoretical standard relationship curve, it can be determined that the stage of the scanning electron microscope is not tilted.
And when the scanning electron microscope machine is judged not to be inclined, comparing the actual relation curve with the theoretical standard relation curve, and if the actual relation curve is superposed with the theoretical standard relation curve, judging that the scanning electron microscope machine is not inclined. And if the actual relation curve is not coincident with the theoretical standard relation curve, judging that the scanning electron microscope machine is inclined.
Optionally, the plurality of actual relationship curves are compared with a theoretical standard relationship curve, and if the actual relationship curves are both overlapped with the theoretical standard relationship curve, it is determined that the scanning electron microscope platform is not inclined. And if the more than two actual relation curves are not coincident with the theoretical standard relation curve, judging that the scanning electron microscope machine is inclined.
It should be noted that when the stage of the SEM is determined to be tilted, the stage of the SEM is maintained. Optionally, the bearing table 300 is tilted within a set angle range around the center thereof, so that an included angle is formed between the axis of the electron emission gun 100 and the X axis on the bearing table 300, and the tilt angle of the bearing table around the center thereof is the angle of the included angle. The included angle may vary over a range of angles. The range of angles can be selected based on experience of a person skilled in the art. It should be appreciated that if the angle between the electron gun 100 and the X-axis of the stage 300 is too large, the scanning electron microscope image will be blurred. If the angle between the electron emission gun 100 and the X-axis on the judgment and correlation table 300 is too small, the difference between the line widths measured at different measurement points is too small, and the difference between the actual relationship curve and the theoretical standard relationship curve is too small, so that the difficulty in comparing the actual relationship curve with the theoretical standard relationship curve is increased. Preferably, the present embodiment provides a preferable angle range, the angle range between the electron emission gun 100 and the X-axis on the stage 300 is 85 degrees to 95 degrees, i.e. the set angle range of the stage 300 tilting around its center is 85 degrees to 95 degrees.
Further, the carrier 300 moves at a constant speed around its center within the set angle range, and the detector acquires the line width of the mark 210 at set time intervals. That is, a plurality of tilt angles are selected as the measurement points within the set angle range, and the number of the measurement points may be set based on experience of those skilled in the art, and it is understood that the greater the number of the measurement points, the higher the accuracy of the established actual relationship curve, but the greater the amount of work required. The smaller the number of measurement points, the lower the accuracy of the established actual relationship curve, but the less favorable the judgment. Therefore, the number of measurement points needs to be within a reasonable range of values. It is to be noted that the measurement points are uniformly distributed within the set angle range, that is, the tilt angles at which the line width of the mark 210 is acquired are uniformly distributed within the angle range. Therefore, the establishment of the actual relation curve can be facilitated. Further, the measurement point should include both end points in the set angle range.
In a preferred embodiment, the set angle ranges from 85 degrees to 95 degrees, so that the angle between the electron gun 100 and the X-axis of the carrier 300 ranges from 85 degrees to 95 degrees. One measurement point is set every 0.2 degrees so that 50 measurement points are evenly distributed within an angular range of 10 degrees. In this way, a true relationship curve with appropriate accuracy can be obtained.
Alternatively, the detector measures the mark 210 a plurality of times, and uses an average value of the plurality of measurement results as the line width of the mark 210. It is understood that in order to reduce measurement errors, multiple measurements are made at each measurement point, and the line width is averaged over the multiple measurements.
Fig. 5 is a distribution diagram of the marks on the test wafer according to the embodiment. As shown in fig. 5, at least one mark 210 is disposed on the test wafer 200, where the mark 210 includes at least one trench, and the line width is a width of the trench or a distance between adjacent trenches. Further, the spacing between adjacent trenches is the same as the trench width, and the values of the spacing between adjacent trenches and the trench width include, but are not limited to, 200nm, 100nm, or 50 nm.
Specifically, the mark 210 on the test wafer 200 includes a plurality of parallel grooves. The line width is the width of the groove or the space between adjacent grooves. The X-axis on the carrier stage 300 should be perpendicular to the mark 210 to be measured, i.e. the X-axis is perpendicular to the long side of the groove in the mark 210. Thus, the carrier 300 is tilted within a predetermined angle range around the center thereof in the X axis direction, and the line width of the mark 210 is obtained to obtain an actual relationship curve when the carrier 300 is measured at different tilt angles, so as to determine whether the scanning electron microscope stage is tilted in the X axis direction.
FIG. 6 is another distribution diagram of the marks on the test wafer according to the present embodiment. Referring to fig. 2, 5 and 6, the marks 210 are distributed along the center circumference of the test wafer, and the marks 210 are uniformly distributed along a center point 220 in an axisymmetric manner. Therefore, a plurality of marks 210 with different arrangement directions are formed in one test wafer 200, and thus, the plurality of axial tilt conditions of the scanning electron microscope can be determined through the marks 210 on the test wafer 200.
Further, the test wafer 200 includes at least two pairs of marks 210 perpendicular to each other.
Referring back to fig. 5, in a preferred embodiment, the carrier 300 further includes a Y-axis, and the Y-axis is perpendicular to the X-axis. The test wafer 200 includes a first mark 211, a second mark 212, a third mark 213, and a fourth mark 214. The first mark 211 and the third mark 213 are parallel to each other and symmetrically disposed on both sides of the center point 220. The second mark 212 and the fourth mark 214 are parallel to each other and symmetrically disposed on both sides of the center point 220. The first mark 211 and the second mark 212 are perpendicular to each other. The Y axis of the carrier 300 is perpendicular to the second mark 212, so that the carrier 300 is tilted within a predetermined angle range around the center thereof in the Y axis direction, and the detector measures the line widths of the first mark 211 and/or the third mark 213 to obtain an actual relationship curve when the carrier 300 is at different tilt angles, and compares the actual relationship curve with the theoretical relationship curve to determine whether the stage of the scanning electron microscope is tilted in the Y axis direction.
Fig. 7 is a schematic structural diagram of the mark provided in this embodiment. As shown in fig. 2 and 7, the test wafer 200 further includes a protection layer 204 covering the upper surface of the test wafer 200 and the inner wall of the trench.
Optionally, the test wafer 200 includes a substrate 201, an oxide layer 202, a polysilicon layer 203, and a protection layer 204, where the oxide layer 202 is disposed on an upper surface of the substrate 201, and forms a plurality of oxide layer 202 units arranged at intervals. The polysilicon layer 203 is arranged on the oxide layer 202, and polysilicon layer 203 units with preset width which are in one-to-one correspondence with the oxide layer 202 units are formed; the passivation layer 204 is on the upper surface of the test wafer 200 and on the inner walls of the trenches.
Preferably, the protective layer 204 of the test wafer 200 is a TaN layer. The TaN layer has good electrical conductivity, so that the influence of the charge effect of the bearing table 300 on the process of monitoring the scanning electron microscope machine for a long time can be effectively avoided, the polycrystalline silicon layer 203 and the substrate 201 on the tested test wafer 200 can be prevented from being influenced by the charge effect of the bearing table 300, and the shape of the groove can be kept unchanged for a long time. Further, the trench width on the test wafer 200 can be more accurate when the trench is used as a measurement object. And then guarantee the accuracy of measuring result, avoid leading to judging whether the conclusion that the scanning electron microscope board inclines appears the deviation because of the measuring result deviation.
The TaN layer functions to protect the polysilicon layer 203 and the substrate 201 from the charge of the carrier table 300, so that the thicker the thickness thereof should be, the better. On the other hand, as the process is carried out, the test wafer 200 needs to be processed by other subsequent processes, so the thickness of the test wafer cannot be too thick, and after the above two factors are combined, the thickness of the TaN layer is preferably 8-12 angstroms.
In summary, the embodiment of the present invention provides a method for determining whether a stage of a scanning electron microscope is tilted, including placing a test wafer on a stage, where the test wafer has at least one mark; controlling the bearing table to incline within a set angle range around the center of the bearing table, and simultaneously, obtaining the line width of the mark by the detector when the bearing table is at different inclination angles; establishing an actual relation curve of the line width of the mark and the inclination angle of the bearing table; and comparing the actual relation curve with the theoretical standard relation curve to judge whether the scanning electron microscope machine is inclined. The invention can objectively and quantifiably scan whether the electronic microscope platform inclines or not. The method avoids the phenomenon that the measurement precision of the scanning electron microscope is influenced due to the fact that the judgment results are different due to the difference of subjective judgment of different technicians, and then the measurement error occurs.
The above description is only a preferred embodiment of the present invention, and does not limit the present invention in any way. It will be understood by those skilled in the art that various changes, substitutions and alterations can be made herein without departing from the spirit and scope of the invention as defined by the appended claims.
Claims (11)
1. A method for judging whether a scanning electron microscope machine is inclined, wherein the machine comprises a detector and a bearing platform, and the method is characterized by comprising the following steps:
placing a test wafer on a bearing table, wherein at least one mark is arranged on the test wafer;
controlling the bearing table to incline within a set angle range around the center of the bearing table, and simultaneously, obtaining the line width of the mark by the detector when the bearing table is at different inclination angles;
establishing an actual relation curve of the line width of the mark and the inclination angle of the bearing table;
and comparing the actual relation curve with the theoretical relation curve to judge whether the scanning electron microscope platform is inclined.
2. The method according to claim 1, wherein the actual relationship curve is compared with the theoretical standard relationship curve;
if the actual relation curve is superposed with the theoretical standard relation curve, judging that the scanning electron microscope machine does not incline;
and if the actual relation curve is not coincident with the theoretical standard relation curve, judging that the scanning electron microscope machine is inclined.
3. The method according to claim 1, wherein the actual relationship curves are compared with the theoretical standard relationship curve;
if the actual relation curves are superposed with the theoretical standard relation curves, judging that the scanning electron microscope machine table is not inclined;
and if the at least two actual relation curves are not coincident with the theoretical standard relation curve, judging that the scanning electron microscope machine is inclined.
4. The method according to claim 2 or 3, wherein the stage is maintained when the stage is determined to be tilted.
5. The method of claim 1, wherein the mark comprises at least one trench, and the line width is a width of the trench or a distance between adjacent trenches.
6. The method of claim 1, wherein the marks are circumferentially distributed along a center of the test wafer.
7. The method according to claim 1 or 6, wherein the test wafer comprises two pairs of marks perpendicular to each other.
8. The method as claimed in claims 5-7, wherein the test wafer further comprises a passivation layer covering the top surface of the test wafer and the inner wall of the trench.
9. The method of claim 1, wherein the predetermined angle is in a range of 85 degrees to 95 degrees.
10. The method according to claim 1, wherein the carrier moves at a constant speed around its center within the predetermined angle range, and the detector obtains the line width of the mark at predetermined intervals.
11. The method as claimed in claim 1, wherein the detector measures the mark a plurality of times, and an average value of the plurality of measurements is used as the line width of the mark.
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Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1097866A (en) * | 1994-02-05 | 1995-01-25 | 中国科学院上海光学精密机械研究所 | Method for automatic compensation of measuring error due to linear bar inclination |
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Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1097866A (en) * | 1994-02-05 | 1995-01-25 | 中国科学院上海光学精密机械研究所 | Method for automatic compensation of measuring error due to linear bar inclination |
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