CN111415874A - Wafer detection method - Google Patents
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- CN111415874A CN111415874A CN201910012475.5A CN201910012475A CN111415874A CN 111415874 A CN111415874 A CN 111415874A CN 201910012475 A CN201910012475 A CN 201910012475A CN 111415874 A CN111415874 A CN 111415874A
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
- H01L22/10—Measuring as part of the manufacturing process
- H01L22/12—Measuring as part of the manufacturing process for structural parameters, e.g. thickness, line width, refractive index, temperature, warp, bond strength, defects, optical inspection, electrical measurement of structural dimensions, metallurgic measurement of diffusions
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Abstract
The invention provides a wafer detection method, which comprises the following steps: establishing a measurement program, and measuring the surface of the wafer according to the measurement program to obtain the actual distance between the surface of the wafer and the measurement lens; acquiring focal lengths of a plurality of different areas of the wafer in the measuring process, and obtaining a virtual distance between the surface of the wafer and the measuring lens according to the acquired focal lengths and the actual distance between the surface of the wafer and the measuring lens; acquiring the actual distance between the surface of the wafer and the detection lens; and adjusting the detection lens to enable the actual distance between the detection lens and the surface of the wafer to be equal to the virtual distance, and detecting the surface of the wafer by using the detection lens. The wafer detection method can effectively avoid the nuisance influence caused by the height difference of the surface of the wafer, thereby ensuring the detection precision.
Description
Technical Field
The invention belongs to the technical field of integrated circuits, and particularly relates to a wafer detection method.
Background
In the conventional semiconductor process, after a certain semiconductor processing steps are performed on a wafer (wafer), such as a CMP (chemical mechanical polishing) process, a CVD (chemical vapor deposition) process, an Etch (etching) process, etc., the surface of the wafer will no longer be a completely flat surface, i.e., the surface flatness of the wafer will be poor.
However, as the Critical Dimension (CD) of the device structure is reduced, especially when the CD of the device structure is smaller than 45nm, the flatness of the wafer surface will significantly affect the focus (focus) of the inspection tool, thereby affecting the inspection accuracy. Taking defect detection as an example, the detection principle of a defect detection machine is that an upper chip area (die) and a lower chip area (die) which are adjacent to each other or a left chip area and a right chip area which are adjacent to each other are compared, and a graph with the difference exceeding a preset value is determined as a defect; the focus of the inspection tool is set according to specific requirements, such as scanning the surface, previous layer or intentionally slightly defocusing (defocus) to reduce particle defects (grain); due to the fact that the flatness of the surface of the wafer is poor, the surface of the wafer has a height difference, under the condition that a focal length is fixed, an out of focus (out of focus) exists on the surface of the wafer with different heights, and especially when a critical dimension of a device structure is smaller and smaller, the influence on detection performance is more and more obvious, for example, as the critical dimension of the device structure is smaller and smaller, the difference between a defect to be detected by a defect detection machine and nuisance (noise which is not the defect) is smaller and smaller, nuisance is easily judged as the defect during detection, and therefore the detection precision is influenced.
Disclosure of Invention
In view of the above drawbacks of the prior art, an object of the present invention is to provide a wafer inspection method, which is used to solve the problem of poor inspection accuracy when performing defect inspection on a wafer with poor surface flatness by using a fixed focal length as the critical dimension of a device structure is smaller and smaller in the prior art.
To achieve the above and other related objects, the present invention provides a wafer inspection method, which includes the steps of:
the wafer detection method comprises the following steps:
establishing a measurement program, and measuring the surface of the wafer according to the measurement program to obtain the actual distance between the surface of the wafer and a measurement lens;
acquiring focal lengths of a plurality of different areas of the wafer in a measuring process, and obtaining a virtual distance between the surface of the wafer and a measuring lens according to the acquired focal lengths and an actual distance between the surface of the wafer and the measuring lens;
acquiring the actual distance between the surface of the wafer and a detection lens;
and adjusting the detection lens to enable the actual distance between the detection lens and the surface of the wafer to be equal to the virtual distance, and detecting the surface of the wafer by using the detection lens.
As a preferred aspect of the present invention, obtaining the virtual distance between the surface of the wafer and the metrology lens according to the obtained plurality of focal lengths includes:
selecting the best focal length from the plurality of focal lengths;
and obtaining the virtual distance between the surface of the wafer and the measuring lens according to the optimal focal length.
As a preferred aspect of the present invention, obtaining the virtual distance between the surface of the wafer and the metrology lens according to the obtained plurality of focal lengths includes:
taking an average value of a plurality of the focal lengths as an optimal focal length;
and obtaining the virtual distance between the surface of the wafer and the measuring lens according to the optimal focal length.
As a preferred scheme of the present invention, the focal lengths of 3 different regions of the wafer during the measurement process are obtained; wherein, 3 different regions of the wafer respectively include: the wafer measuring device comprises a first measuring area positioned in the center of the wafer, a second measuring area positioned at the outermost side of the wafer and a third measuring area positioned in the centers of the first measuring area and the second measuring area.
As a preferred aspect of the present invention, a size of a minimum measurement area of the measurement lens is smaller than a size of the wafer, and a surface of the wafer includes a plurality of the minimum measurement areas; and obtaining a virtual distance between each minimum measurement area and the measurement lens according to the acquired plurality of focal lengths and the actual distance between each minimum measurement area and the measurement lens.
As a preferable aspect of the present invention, the actual distances between the different points in each of the minimum measurement regions and the measurement lenses are not only the same, but also the virtual distances between the different points in each of the minimum measurement regions and the measurement lenses are not only the same.
As a preferred aspect of the present invention, a size of a minimum measurement area of the inspection lens is smaller than a size of the wafer, and a surface of the wafer includes a plurality of the minimum inspection areas; adjusting the detection lens so that the actual distance between the detection lens and the surface of the wafer is equal to the virtual distance, and detecting the surface of the wafer by using the detection lens comprises the following steps:
placing the detection lens on the minimum detection area; adjusting the detection lens to enable the actual distance between the detection lens and the minimum detection area in the step to be equal to the virtual distance corresponding to the minimum detection area in the step; detecting the minimum detection area in the step by using the detection lens;
moving the detection lens to another minimum detection area; adjusting the detection lens to enable the actual distance between the detection lens and the minimum detection area in the step to be equal to the virtual distance corresponding to the minimum detection area in the step; detecting the minimum detection area in the step sum by using the detection lens;
and repeating the previous step for a plurality of times until the surface of the wafer is detected.
As a preferred embodiment of the present invention, the same tool equipment is used for measuring and inspecting the surface of the wafer.
As a preferable aspect of the present invention, the inspecting the surface of the wafer using the inspection lens includes: the detection lens is used for detecting the surface appearance of the wafer, the detection lens is used for detecting the size of the process graph on the surface of the wafer, and the detection lens is used for detecting the defects on the surface of the wafer.
In a preferred embodiment of the present invention, the wafer includes a wafer after at least one semiconductor process is performed, and the thicknesses of different regions of the wafer are not only the same.
As described above, the wafer inspection method of the present invention has the following advantages:
the wafer detection method comprises the steps of measuring the actual distance between the surface of the wafer and a measuring lens before detecting the wafer, and obtaining the virtual distance between the surface of the wafer and the measuring lens according to the plurality of obtained focal lengths and the actual distance between the surface and the measuring lens after obtaining the focal lengths of a plurality of different areas of the wafer; and then, the actual distance between the surface of the wafer and the detection lens is acquired before the detection is started, and the wafer is detected after the actual distance between the detection lens and the surface of the wafer is adjusted to be equal to the virtual distance acquired before, so that the detection of each area of the wafer can be ensured to be carried out under the optimal focal length, the nuisance influence caused by the height difference of the surface of the wafer can be effectively avoided, and the detection precision is ensured.
Drawings
Fig. 1 is a flowchart illustrating a wafer inspection method according to the present invention.
Detailed Description
The following description of the embodiments of the present invention is provided for illustrative purposes, and other advantages and effects of the present invention will become apparent to those skilled in the art from the present disclosure.
Please refer to fig. 1. It should be understood that the structures, ratios, sizes, and the like shown in the drawings and described in the specification are only used for matching with the disclosure of the specification, so as to be understood and read by those skilled in the art, and are not used to limit the conditions under which the present invention can be implemented, so that the present invention has no technical significance, and any structural modification, ratio relationship change, or size adjustment should still fall within the scope of the present invention without affecting the efficacy and the achievable purpose of the present invention. In addition, the terms "upper", "lower", "left", "right", "middle" and "one" used in the present specification are for clarity of description, and are not intended to limit the scope of the present invention, and the relative relationship between the terms and the terms is not to be construed as a scope of the present invention.
Referring to fig. 1, the present invention provides a wafer inspection method, which includes the following steps:
1) establishing a measurement program, and measuring the surface of the wafer according to the measurement program to obtain the actual distance between the surface of the wafer and a measurement lens;
2) acquiring focal lengths of a plurality of different areas of the wafer in a measuring process, and obtaining a virtual distance between the surface of the wafer and a measuring lens according to the acquired focal lengths and an actual distance between the surface of the wafer and the measuring lens;
3) acquiring the actual distance between the surface of the wafer and a detection lens;
4) and adjusting the detection lens to enable the actual distance between the detection lens and the surface of the wafer to be equal to the virtual distance, and detecting the surface of the wafer by using the detection lens.
In step 1), referring to step S1 in fig. 1, a measurement program (recipe) is established, and the surface of the wafer is measured according to the recipe, so as to obtain the actual distance between the surface of the wafer and the measurement lens.
As an example, the wafer may include a wafer after at least one semiconductor process is performed, and the thicknesses of different regions of the wafer are not only the same; for example, the wafer may include a wafer that has undergone a CMP process, a CVD process, an etching process, or the like, that is, a surface of the wafer has a material layer deposited thereon or a processing structure formed thereon, and at this time, the thickness of the wafer is not only the same, that is, the surface of the wafer is non-planar, but the surface of the wafer is less planar.
As an example, a method for establishing a metrology program and measuring a surface of a wafer according to the established metrology program is known to those skilled in the art and will not be described herein.
As an example, a topography map (map) of the wafer may be obtained during the process of measuring the surface of the wafer according to the measurement program, that is, the surface (leveling) of the entire wafer, that is, the surface height topography of the wafer may be obtained, and the actual distance between each point on the surface of the wafer and the measurement lens may be obtained according to the surface height topography of the wafer.
It should be noted that, the "actual distance between the surface of the wafer and the measurement lens" mentioned herein refers to a vertical distance between the measurement lens and a point on the surface of the wafer when the measurement lens is located directly above the point; that is, the actual distance between each point on the surface of the wafer and the measuring lens is the vertical distance between the measuring lens and the point on the surface of the wafer below the measuring lens when the measuring lens is located right above each point.
In step 2), please refer to step S2 in fig. 1, focus distances of different areas of the wafer during the measurement process are obtained, and a virtual distance between the surface of the wafer and the measurement lens is obtained according to the obtained focus distances and the actual distance between the surface of the wafer and the measurement lens.
As an example, a chip area (die) in the wafer may be selected as one of the above areas, a minimum measurement area of the measurement lens may be selected as one of the above areas, and a complete process-defined detection pattern may be selected as one of the above areas. Preferably, in this embodiment, a complete process-defined inspection pattern in the wafer is selected as one of the above-mentioned areas, that is, in this step, the focal distances of a plurality of complete process-defined inspection patterns in the measurement process need to be acquired.
As an example, in the process of measuring a region, the focal length of the region may be obtained by adjusting the measurement lens. Of course, the focal length of the selected area can also be set according to actual conditions.
In one example, obtaining the virtual distance between the surface of the wafer and the metrology lens according to the obtained plurality of focal lengths comprises:
2-1) selecting the best focal length from a plurality of focal lengths;
2-2) obtaining the virtual distance between the surface of the wafer and the measuring lens according to the optimal focal distance.
As an example, in step 2-1), the best focal distance may be selected from a plurality of the focal distances according to the signal-to-noise ratio during the measurement process, i.e. the focal distance with the largest signal-to-noise ratio among the plurality of focal distances is the best focal distance.
As an example, in step 2-2), the virtual distance between the surface of the wafer and the metrology lens may be obtained according to the optimal focal length according to an algorithm disclosed in the industry, and the above algorithm disclosed in the industry and how to obtain the virtual distance between the surface of the wafer and the metrology lens according to the optimal focal length according to the algorithm disclosed in the industry are known to those skilled in the art, and will not be described herein again.
In another example, obtaining the virtual distance between the surface of the wafer and the metrology lens according to the obtained plurality of focal lengths comprises:
2-1) taking an average value of a plurality of the focal lengths as an optimal focal length;
2-2) obtaining the virtual distance between the surface of the wafer and the measuring lens according to the optimal focal distance.
As an example, in step 2-1), a plurality of the focal lengths may be summed and then averaged to obtain an average value of the plurality of the focal lengths.
As an example, in step 2-2), the virtual distance between the surface of the wafer and the metrology lens may be obtained according to the optimal focal length according to an algorithm disclosed in the industry, and a person skilled in the art knows how to obtain the virtual distance between the surface of the wafer and the metrology lens according to the optimal focal length according to the algorithm disclosed in the industry, and therefore, the description thereof is omitted here.
Of course, in other examples, the calculation of the algorithm disclosed in the industry may be directly performed according to the obtained plurality of focal lengths to obtain the virtual distance between the surface of the wafer and the metrology lens.
As an example, the virtual distance between the surface of the wafer and the metrology lens is a numerical value related to the surface topography of the wafer, which may be, but is not limited to, a gradual value radiating from a selected plurality of areas or areas corresponding to the optimal focal length to the periphery.
It should be noted that, when the wafer is subsequently detected, for each point on the wafer, when the actual distance between the detection lens and the point on the wafer, which is located right below the detection lens, is the corresponding virtual distance, the optimal detection focal length is selected, and at this time, the nuisance can be prevented from interfering with the detection result.
As an example, the specific number of different regions of the wafer that can be selected in this step may be set according to actual needs, that is, any number of different regions required in the wafer may be selected according to actual needs, and then the focal lengths of the regions in the wafer during the measurement process are obtained. Typically, one area will correspond to one focal length. Preferably, in this embodiment, three different regions in the wafer are selected, and focal lengths of the three regions in the wafer during the measurement process are acquired.
Specifically, in the measurement process obtained in this embodiment, the 3 different regions of the wafer respectively include: the wafer measuring device comprises a first measuring area positioned in the center of the wafer, a second measuring area positioned at the outermost side of the wafer and a third measuring area positioned in the centers of the first measuring area and the second measuring area.
As an example, a size of a minimum metrology area of the metrology lens is smaller than a size of the wafer, a surface of the wafer including a plurality of the minimum metrology areas; and obtaining a virtual distance between each minimum measurement area and the measurement lens according to the acquired plurality of focal lengths and the actual distance between each minimum measurement area and the measurement lens.
As an example, the actual distances between different points in each minimum measurement region and the measurement lens are not only the same (i.e., not identical, all points may be different, or some points may be identical), but the virtual distances between different points in each minimum measurement region and the measurement lens are not only the same (i.e., not identical, all points may be different, or some points may be identical); as mentioned above, the virtual distance between the surface of the wafer and the measuring lens is a numerical value related to the surface topography of the wafer, the virtual distance between each point on the wafer and the measuring lens is related to the surface topography of the wafer, and for each minimum measuring region, since the minimum measuring region includes a plurality of points, the virtual distance between each different point in each minimum measuring region and the measuring lens is not only the same, but also the virtual distance between each different point in each minimum measuring region and the measuring lens is not only the same.
In step 3), please refer to step S3 in fig. 1, the actual distance between the surface of the wafer and the inspection lens is obtained.
As an example, but not limited to, scanning the surface of the wafer by using the detection lens, so as to obtain a surface topography of the wafer, and then obtaining an actual distance between the surface of the wafer and the detection lens.
It should be noted that, the "actual distance between the surface of the wafer and the detection lens" described in step 4) refers to a vertical distance between the detection lens and a point on the surface of the wafer when the detection lens is located directly above the point; that is, the actual distances between each point on the surface of the wafer and the detection lens are the vertical distances between the detection lens and the point on the surface of the wafer below the detection lens when the detection lens is located right above each point.
In step 4), please refer to step S4 in fig. 1, the inspection lens is adjusted so that the actual distance between the inspection lens and the surface of the wafer is equal to the virtual distance, and the inspection lens is used to inspect the surface of the wafer.
As an example, a size of a minimum metrology area of the inspection lens is smaller than a size of the wafer, and a surface of the wafer includes a plurality of the minimum inspection areas.
As an example, adjusting the inspection lens so that an actual distance between the inspection lens and the surface of the wafer is equal to the virtual distance, and inspecting the surface of the wafer using the inspection lens includes:
4-1) placing the detection lens on the minimum detection area; adjusting the detection lens to enable the actual distance between the detection lens and the minimum detection area in the step to be equal to the virtual distance corresponding to the minimum detection area in the step; detecting the minimum detection area in the step by using the detection lens;
4-2) moving the detection lens to another minimum detection area; adjusting the detection lens to enable the actual distance between the detection lens and the minimum detection area in the step to be equal to the virtual distance corresponding to the minimum detection area in the step; detecting the minimum detection area in the step sum by using the detection lens;
4-3) repeating the step 4-2) for a plurality of times until the surface of the wafer is detected.
When each minimum detection area is detected, the actual distance between the detection lens and the corresponding minimum detection area is adjusted in real time, so that the actual distance between the detection lens and the corresponding minimum detection area is the same as the virtual distance corresponding to the minimum detection area, and the detection of each minimum detection area can be carried out under the best focal length, so that the interference of nuisance on the detection result can be avoided, and the detection precision is ensured.
It should be noted that each of the minimum detection regions may correspond to each of the minimum measurement regions in step 2).
It should be further noted that, when the virtual distances between the different points in each of the lowest measurement areas and the measurement lenses are not only the same, the detection lenses may be adjusted in this step, so that the actual distance between the detection lens and the center of the minimum detection area located right below the detection lens is equal to the virtual distance between the corresponding center of the minimum measurement area and the measurement lens.
For example, since different machines may have different optimal focal lengths, in order to ensure the detection accuracy, the same machine is used to measure and detect the surface of the wafer, i.e., the above steps of detecting the wafer are performed on the same machine.
As an example, inspecting the surface of the wafer using the inspection lens may include: detecting the surface appearance of the wafer by using the detection lens, detecting the size of a process graph on the surface of the wafer by using the detection lens, and detecting the defect on the surface of the wafer by using the detection lens; preferably, in this embodiment, the defect on the surface of the wafer is detected by using the detection lens.
In summary, the present invention provides a wafer inspection method, which includes the following steps: establishing a measurement program, and measuring the surface of the wafer according to the measurement program to obtain the actual distance between the surface of the wafer and a measurement lens; acquiring focal lengths of a plurality of different areas of the wafer in a measuring process, and obtaining a virtual distance between the surface of the wafer and a measuring lens according to the acquired focal lengths and an actual distance between the surface of the wafer and the measuring lens; acquiring the actual distance between the surface of the wafer and a detection lens; and adjusting the detection lens to enable the actual distance between the detection lens and the surface of the wafer to be equal to the virtual distance, and detecting the surface of the wafer by using the detection lens. The wafer detection method comprises the steps of measuring the actual distance between the surface of the wafer and a measuring lens before detecting the wafer, and obtaining the virtual distance between the surface of the wafer and the measuring lens according to the plurality of obtained focal lengths and the actual distance between the surface and the measuring lens after obtaining the focal lengths of a plurality of different areas of the wafer; and then, the actual distance between the surface of the wafer and the detection lens is acquired before the detection is started, and the wafer is detected after the actual distance between the detection lens and the surface of the wafer is adjusted to be equal to the virtual distance acquired before, so that the detection of each area of the wafer can be ensured to be carried out under the optimal focal length, the nuisance influence caused by the height difference of the surface of the wafer can be effectively avoided, and the detection precision is ensured.
The foregoing embodiments are merely illustrative of the principles and utilities of the present invention and are not intended to limit the invention. Any person skilled in the art can modify or change the above-mentioned embodiments without departing from the spirit and scope of the present invention. Accordingly, it is intended that all equivalent modifications or changes which can be made by those skilled in the art without departing from the spirit and technical spirit of the present invention be covered by the claims of the present invention.
Claims (10)
1. A wafer detection method is characterized by comprising the following steps:
establishing a measurement program, and measuring the surface of the wafer according to the measurement program to obtain the actual distance between the surface of the wafer and a measurement lens;
acquiring focal lengths of a plurality of different areas of the wafer in a measuring process, and obtaining a virtual distance between the surface of the wafer and a measuring lens according to the acquired focal lengths and an actual distance between the surface of the wafer and the measuring lens;
acquiring the actual distance between the surface of the wafer and a detection lens;
and adjusting the detection lens to enable the actual distance between the detection lens and the surface of the wafer to be equal to the virtual distance, and detecting the surface of the wafer by using the detection lens.
2. The method as claimed in claim 1, wherein obtaining the virtual distance between the surface of the wafer and the metrology lens according to the obtained plurality of focal lengths comprises:
selecting the best focal length from the plurality of focal lengths;
and obtaining the virtual distance between the surface of the wafer and the measuring lens according to the optimal focal length.
3. The method as claimed in claim 1, wherein obtaining the virtual distance between the surface of the wafer and the metrology lens according to the obtained plurality of focal lengths comprises:
taking an average value of a plurality of the focal lengths as an optimal focal length;
and obtaining the virtual distance between the surface of the wafer and the measuring lens according to the optimal focal length.
4. The wafer inspection method of claim 1, wherein the focal lengths of 3 different areas of the wafer during the measurement process are obtained; wherein, 3 different regions of the wafer respectively include: the wafer measuring device comprises a first measuring area positioned in the center of the wafer, a second measuring area positioned at the outermost side of the wafer and a third measuring area positioned in the centers of the first measuring area and the second measuring area.
5. The wafer inspection method of claim 1, wherein a minimum metrology area of the metrology lens is smaller in size than the wafer, the surface of the wafer comprising a plurality of the minimum metrology areas; and obtaining a virtual distance between each minimum measurement area and the measurement lens according to the acquired plurality of focal lengths and the actual distance between each minimum measurement area and the measurement lens.
6. The wafer inspection method as claimed in claim 5, wherein the actual distances between different points in each of the minimum measurement areas and the metrology lens are not the same, and the virtual distances between different points in each of the minimum measurement areas and the metrology lens are not the same.
7. The method as claimed in claim 5, wherein the minimum measurement area of the inspection lens is smaller than the wafer, and the surface of the wafer includes a plurality of the minimum inspection areas; adjusting the detection lens so that the actual distance between the detection lens and the surface of the wafer is equal to the virtual distance, and detecting the surface of the wafer by using the detection lens comprises the following steps:
placing the detection lens on the minimum detection area; adjusting the detection lens to enable the actual distance between the detection lens and the minimum detection area in the step to be equal to the virtual distance corresponding to the minimum detection area in the step; detecting the minimum detection area in the step by using the detection lens;
moving the detection lens to another minimum detection area; adjusting the detection lens to enable the actual distance between the detection lens and the minimum detection area in the step to be equal to the virtual distance corresponding to the minimum detection area in the step; detecting the minimum detection area in the step sum by using the detection lens;
and repeating the previous step for a plurality of times until the surface of the wafer is detected.
8. The method as claimed in claim 1, wherein the same tool is used for measuring and inspecting the surface of the wafer.
9. The wafer inspection method of claim 1, wherein inspecting the surface of the wafer using the inspection lens comprises: the detection lens is used for detecting the surface appearance of the wafer, the detection lens is used for detecting the size of the process graph on the surface of the wafer, and the detection lens is used for detecting the defects on the surface of the wafer.
10. The method as claimed in claim 1, wherein the wafer comprises a wafer after at least one semiconductor process is performed, and the thickness of different regions of the wafer is not only the same.
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| CN201910012475.5A CN111415874A (en) | 2019-01-07 | 2019-01-07 | Wafer detection method |
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| CN201910012475.5A CN111415874A (en) | 2019-01-07 | 2019-01-07 | Wafer detection method |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN113079318A (en) * | 2021-03-30 | 2021-07-06 | 上海华力微电子有限公司 | Automatic focusing system and method for edge defect and computer storage medium |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN113079318A (en) * | 2021-03-30 | 2021-07-06 | 上海华力微电子有限公司 | Automatic focusing system and method for edge defect and computer storage medium |
| CN113079318B (en) * | 2021-03-30 | 2023-03-14 | 上海华力微电子有限公司 | System and method for automatically focusing edge defects and computer storage medium |
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Application publication date: 20200714 |