CN111916522A - Palladium-connected double-junction GaAs/Si Schottky junction solar cell and preparation method thereof - Google Patents
Palladium-connected double-junction GaAs/Si Schottky junction solar cell and preparation method thereof Download PDFInfo
- Publication number
- CN111916522A CN111916522A CN202010516129.3A CN202010516129A CN111916522A CN 111916522 A CN111916522 A CN 111916522A CN 202010516129 A CN202010516129 A CN 202010516129A CN 111916522 A CN111916522 A CN 111916522A
- Authority
- CN
- China
- Prior art keywords
- gaas
- graphene
- palladium
- substrate
- schottky junction
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 229910001218 Gallium arsenide Inorganic materials 0.000 title claims abstract description 84
- 238000002360 preparation method Methods 0.000 title claims abstract description 22
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims abstract description 89
- 229910021389 graphene Inorganic materials 0.000 claims abstract description 89
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 claims abstract description 66
- 239000000758 substrate Substances 0.000 claims abstract description 58
- 229910052763 palladium Inorganic materials 0.000 claims abstract description 33
- 239000002105 nanoparticle Substances 0.000 claims abstract description 18
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims abstract description 16
- 229910052709 silver Inorganic materials 0.000 claims abstract description 4
- 239000004332 silver Substances 0.000 claims abstract description 4
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 claims description 20
- 238000004528 spin coating Methods 0.000 claims description 19
- 238000000137 annealing Methods 0.000 claims description 15
- 238000001035 drying Methods 0.000 claims description 15
- 238000001704 evaporation Methods 0.000 claims description 15
- PYTMYKVIJXPNBD-UHFFFAOYSA-N clomiphene citrate Chemical compound [H+].[H+].[H+].[O-]C(=O)CC(O)(CC([O-])=O)C([O-])=O.C1=CC(OCCN(CC)CC)=CC=C1C(C=1C=CC=CC=1)=C(Cl)C1=CC=CC=C1 PYTMYKVIJXPNBD-UHFFFAOYSA-N 0.000 claims description 12
- CTQNGGLPUBDAKN-UHFFFAOYSA-N O-Xylene Chemical group CC1=CC=CC=C1C CTQNGGLPUBDAKN-UHFFFAOYSA-N 0.000 claims description 10
- 239000004793 Polystyrene Substances 0.000 claims description 10
- 239000013078 crystal Substances 0.000 claims description 10
- 230000008020 evaporation Effects 0.000 claims description 10
- 229920000885 poly(2-vinylpyridine) Polymers 0.000 claims description 10
- 229920003229 poly(methyl methacrylate) Polymers 0.000 claims description 10
- 239000004926 polymethyl methacrylate Substances 0.000 claims description 10
- 229920002223 polystyrene Polymers 0.000 claims description 10
- 238000001291 vacuum drying Methods 0.000 claims description 10
- 238000002791 soaking Methods 0.000 claims description 8
- 238000000034 method Methods 0.000 claims description 7
- 229910003244 Na2PdCl4 Inorganic materials 0.000 claims description 5
- 229910020486 P2VP Inorganic materials 0.000 claims description 5
- 239000011248 coating agent Substances 0.000 claims description 5
- 238000000576 coating method Methods 0.000 claims description 5
- 229910003460 diamond Inorganic materials 0.000 claims description 5
- 239000010432 diamond Substances 0.000 claims description 5
- 238000005566 electron beam evaporation Methods 0.000 claims description 5
- 238000010438 heat treatment Methods 0.000 claims description 5
- 229940078552 o-xylene Drugs 0.000 claims description 5
- 238000009832 plasma treatment Methods 0.000 claims description 5
- 238000003825 pressing Methods 0.000 claims description 5
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 5
- 238000009736 wetting Methods 0.000 claims description 5
- 238000004140 cleaning Methods 0.000 claims description 3
- 238000004519 manufacturing process Methods 0.000 abstract description 7
- 238000003912 environmental pollution Methods 0.000 abstract description 2
- 239000004065 semiconductor Substances 0.000 description 9
- 238000005086 pumping Methods 0.000 description 4
- 239000002019 doping agent Substances 0.000 description 3
- 239000007788 liquid Substances 0.000 description 3
- 229910052751 metal Inorganic materials 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- 230000005641 tunneling Effects 0.000 description 3
- 238000010586 diagram Methods 0.000 description 2
- 238000005265 energy consumption Methods 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000006467 substitution reaction Methods 0.000 description 2
- 238000005406 washing Methods 0.000 description 2
- 241000282414 Homo sapiens Species 0.000 description 1
- 238000005411 Van der Waals force Methods 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 230000008094 contradictory effect Effects 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 238000005468 ion implantation Methods 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 239000000463 material Substances 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
- H01L31/07—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the Schottky type
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1804—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof comprising only elements of Group IV of the Periodic Table
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1804—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof comprising only elements of Group IV of the Periodic Table
- H01L31/1812—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof comprising only elements of Group IV of the Periodic Table including only AIVBIV alloys, e.g. SiGe
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/547—Monocrystalline silicon PV cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Photovoltaic Devices (AREA)
- Electrodes Of Semiconductors (AREA)
Abstract
The invention discloses a palladium-connected double-junction GaAs/Si Schottky junction solar cell and a preparation method thereof. The double-junction GaAs/Si Schottky junction solar cell sequentially comprises an Au back electrode, a Si substrate, a graphene layer, palladium nano-particles, a GaAs substrate, a graphene layer and a silver paste top electrode from bottom to top. The invention also discloses a preparation method of the double-junction GaAs/Si Schottky junction solar cell connected by the palladium. The double-junction GaAs/Si Schottky junction solar cell has the advantages of simple preparation process, low device production cost, less environmental pollution and wide application prospect.
Description
Technical Field
The invention belongs to the technical field of solar cells, and particularly relates to a palladium-connected double-junction GaAs/graphene Schottky junction solar cell and a preparation method thereof.
Background
The growing number of the population of the earth, the aggravation of the pollution of the ecological environment and the increasing demand of human beings for energy make the development of renewable clean energy resources increase dramatically. Solar energy is the clean energy which is most widely distributed and has the largest total amount in nature, thereby arousing great research interest of people. Solar cells currently on the market are fabricated on the basis of p-n junctions, which however usually require high temperature ion diffusion and expensive ion implantation processes to introduce dopants into the substrate. The preparation process is complex, and the pollution and energy consumption in the production process are high, which is contradictory to the goal of clean energy.
Therefore, people combine two-dimensional materials such as graphene and the like with a semiconductor substrate to prepare the Schottky junction solar cell, and the Schottky junction solar cell has the advantages of simple preparation process, low cost, low pollution and low energy consumption in the production process and has received wide attention. Through the last decade of effort, the efficiency of single junction schottky junction solar cells has been greatly improved, but the space for further improvement is limited.
Disclosure of Invention
In order to overcome the defects of the prior art, the invention mainly aims to provide a palladium-connected double-junction GaAs/Si Schottky junction solar cell. The GaAs/graphene Schottky junction battery and the Si/graphene Schottky junction solar battery are connected through the metal palladium to form the double-junction solar battery, on one hand, the metal palladium replaces a traditional tunnel junction, so that the preparation process of the battery can be effectively simplified, on the other hand, the photoelectric conversion efficiency of the double-junction solar battery can be greatly improved, meanwhile, the manufacturing cost of the double-junction solar battery is lower than that of the traditional double-junction solar battery, and the preparation process of the battery is also simplified.
The invention also aims to provide a preparation method of the palladium-connected double-junction GaAs/Si Schottky junction solar cell.
The purpose of the invention is realized by the following technical scheme:
a palladium-connected double-junction GaAs/Si Schottky junction solar cell sequentially comprises an Au back electrode, a Si substrate, graphene, palladium nanoparticles, a GaAs substrate, graphene and an Ag electrode (silver paste top electrode) from bottom to top.
Further, the GaAs substrate has a crystal orientation of (100) and a dopant ofSi with a doping concentration of 1X 1017-2×1018/cm3. The Si substrate has a crystal orientation of (100), a dopant of As and a doping concentration of 5 multiplied by 1017-5×1018/cm3
Further, the thickness of the Au back electrode is 30-300nm, the thickness of the Si substrate is 50-500 μm, the thickness of the GaAs substrate is 20-500 μm, the thickness of the graphene layer is 1-7 atomic layers, the size of the palladium nanoparticle is 10-100nm, and the thickness of the conductive silver paste top electrode is 0.2-2 μm.
The preparation method of the palladium-connected double-junction GaAs/Si Schottky junction solar cell comprises the following preparation steps:
(1) evaporating a layer of Au on the back surface of the Si substrate by adopting an electron beam evaporation method to be used as a back electrode, and annealing after the evaporation is finished;
(2) using diamond pen to crack the GaAs, Si substrate into 1-4cm2Chipping and cleaning;
(3) an o-xylene solution containing polystyrene and poly (2-vinylpyridine) (PS-b-P2 VP) is spin-coated on a GaAs substrate by means of spin coating, then the substrate is soaked in a Na2PdCl4 solution, and finally PS-b-P2VP is removed by Ar plasma treatment, so that palladium nanoparticles are obtained on GaAs.
(4) And transferring the soaked graphene, floating the graphene on the water surface, clamping the GaAs substrate sheet by using a pair of tweezers, fishing out the graphene after the graphene is contacted with the surface without the palladium nano-particles, and placing the graphene in a vacuum drying oven for vacuum pumping and room temperature drying for 1-2 hours. And then soaking in acetone at the temperature of 20-80 ℃ for 10-50 minutes to remove PMMA on the surface of the graphene.
(5) And attaching an insulating tape to the edge of the graphene to reduce electric leakage, and then coating a circle of conductive silver paste on the insulating tape by using an injector, and ensuring that the conductive silver paste is in contact with the graphene. And finally, heating and drying at 50-100 ℃ for 30-50 minutes to obtain the GaAs/graphene Schottky junction battery.
(6) And clamping the Si substrate sheet by using a pair of tweezers, fishing out the substrate sheet after the substrate sheet is contacted with the soaked graphene, and placing the substrate sheet in a vacuum drying box for vacuumizing and drying at room temperature for 1-2 hours. And then soaking in acetone at the temperature of 20-80 ℃ for 10-50 minutes to remove PMMA on the surface of the graphene, so as to obtain the Si/graphene Schottky junction battery.
(7) And wetting the back surface of GaAs containing palladium, contacting the GaAs with graphene of the Si/graphene Schottky junction cell, and pressing and vacuumizing the GaAs and the GaAs at room temperature for 2-3h to obtain the palladium-connected double-junction GaAs/Si Schottky junction solar cell.
Further, the evaporation rate of the back electrode in the step (1) is 0.2-1.5 nm/s.
Further, the annealing treatment in the step (1) refers to an annealing treatment for 10-30min at a temperature of 100-600 ℃.
Furthermore, the concentration of the polystyrene and the poly (2-vinylpyridine) in the step (3) is 100-150kg/mol, the spin-coating rotation speed is 1500-4000r/mi, and the time is 15-60 s.
The principle of the invention is as follows:
the metal palladium plays a role of a tunneling junction, the GaAs/graphene Schottky junction and the Si/graphene Schottky junction are connected to form a double-junction solar cell, and the single-junction solar cells are bonded through Van der Waals force.
Compared with the prior art, the invention has the following advantages and beneficial effects:
(1) the existing unijunction graphene/semiconductor unijunction solar cell has limited efficiency improvement space, and the efficiency of the solar cell can be effectively improved by preparing a double-junction GaAs/Si Schottky junction solar cell.
(2) Compared with the traditional pn junction solar cell, the Schottky junction solar cell has the advantages of simple preparation process, obviously reduced manufacturing cost and reduced environmental pollution.
(3) The palladium nano particles are used for replacing the traditional tunneling junction to connect the top layer battery and the bottom layer battery, so that the preparation cost of the device can be further reduced, and the preparation process is simplified.
Drawings
FIG. 1 is a schematic diagram of a palladium-connected double-junction GaAs/Si Schottky junction solar cell in an embodiment of the invention.
Detailed Description
The present invention will be described in further detail with reference to examples and drawings, but the present invention is not limited thereto.
Embodiment 1 a schematic structural diagram of a palladium-connected double-junction GaAs/Si schottky junction solar cell and a method for manufacturing the same according to the present embodiment is shown in fig. 1. The electrode comprises an Au back electrode 1, a Si substrate 2, a graphene layer 3, palladium nanoparticles 4, a GaAs substrate 5, a graphene layer 6 and a silver paste top electrode 7 which are sequentially stacked from bottom to top.
The double-junction GaAs/Si Schottky junction solar cell connected with palladium is prepared by the following method:
(1) si-doped n-type GaAs semiconductor is adopted, the thickness of the semiconductor is 350 mu m, the crystal orientation is (100),
the doping concentration is 1X 1017/cm3. As-doped n-type Si semiconductor with thickness of 300 μm, crystal orientation of (100), and doping concentration of 1 × 1018/cm3. And (3) evaporating a layer of Au on the back surface of the Si as a back electrode by an electron beam evaporation system, wherein the evaporation rate is 1.1 nm/s, the thickness is 120 nm, and annealing treatment is carried out after the evaporation is finished. The annealing temperature is 300 ℃, and the annealing time is 20 min. Splitting the substrate into 1cm pieces with a diamond pen2And washing the chips.
(2) An o-xylene solution containing polystyrene and poly (2-vinylpyridine) (PS-b-P2 VP) was prepared, with a polystyrene concentration of 120kg/mol and a poly (2-vinylpyridine) concentration of 125 kg/mol. And spin-coating the prepared spin-coating liquid on the GaAs substrate in a spin-coating mode, wherein the spin-coating speed is 2000r/min, and the spin-coating time is 50 s. The substrate is then soaked in Na2PdCl4In solution, PS-b-P2VP was finally removed by Ar plasma treatment to yield palladium nanoparticles on GaAs.
(3) And transferring the soaked graphene, floating the graphene on the water surface, clamping the GaAs substrate sheet by using a pair of tweezers, fishing out the graphene after the graphene is contacted with the surface without the palladium nano-particles, and placing the graphene in a vacuum drying oven for vacuum pumping and room temperature drying for 1 hour. And then soaked in acetone at 30 ℃ for 10 minutes to remove the PMMA on the surface of the graphene.
(5) And attaching an insulating tape to the edge of the graphene to reduce electric leakage, and then coating a circle of conductive silver paste on the insulating tape by using an injector, and ensuring that the conductive silver paste is in contact with the graphene. And finally, heating and drying at 60 ℃ for 40 minutes to obtain the GaAs/graphene Schottky junction battery.
(6) And clamping the Si substrate sheet by using a pair of tweezers, fishing out the substrate sheet after the substrate sheet is contacted with the soaked graphene, and placing the substrate sheet in a vacuum drying box for vacuumizing and drying at room temperature for 1 hour. And then soaking in acetone at 50 ℃ for 50 minutes to remove PMMA on the surface of the graphene, thereby obtaining the Si/graphene Schottky junction battery.
(7) And wetting the back surface of GaAs containing palladium, contacting the GaAs with graphene of the Si/graphene Schottky junction cell, and pressing and vacuumizing the GaAs and the GaAs at room temperature for 2h to obtain the palladium-connected double-junction GaAs/Si Schottky junction solar cell.
The embodiment provides a palladium-connected double-junction GaAs/Si Schottky junction solar cell and a preparation method thereof, and palladium nanoparticles replace a traditional tunneling junction to connect a top cell and a bottom cell, so that the manufacturing cost of a device can be effectively reduced, the preparation process is simplified, and the pollution to the environment is reduced. The double-junction Schottky junction solar cell can obviously improve the efficiency of the Schottky junction solar cell and keep lower device preparation cost, and has wide application prospect.
The palladium-connected double-junction GaAs/Si schottky junction solar cell described in example 2 was prepared by the following method:
(1) si-doped n-type GaAs semiconductor with the thickness of 400 μm and the crystal orientation of (100) is adopted,
the doping concentration is 5X 1017/cm3. As-doped n-type Si semiconductor with thickness of 400 μm, crystal orientation of (100), and doping concentration of 1 × 1018/cm3. And (3) evaporating a layer of Au on the back surface of the Si as a back electrode by an electron beam evaporation system, wherein the evaporation rate is 1.5nm/s, the thickness is 150 nm, and annealing treatment is carried out after the evaporation. The annealing temperature is 500 ℃, and the annealing time is 30 min. Splitting the substrate into 1cm pieces with a diamond pen2And washing the chips.
(2) An o-xylene solution containing polystyrene and poly (2-vinylpyridine) (PS-b-P2 VP) was prepared, with a polystyrene concentration of 110kg/mol and a poly (2-vinylpyridine) concentration of 120 kg/mol. And spin-coating the prepared spin-coating liquid on the GaAs substrate in a spin-coating mode, wherein the spin-coating speed is 2500r/min, and the spin-coating time is 40 s. The substrate was then soaked in Na2PdCl4 solution and finally PS-b-P2VP was removed by Ar plasma treatment to yield palladium nanoparticles on GaAs.
(3) And transferring the soaked graphene, floating the graphene on the water surface, clamping the GaAs substrate sheet by using a pair of tweezers, fishing out the graphene after the graphene is contacted with the surface without the palladium nano-particles, and placing the graphene in a vacuum drying oven for vacuum pumping and room temperature drying for 1 hour. And then soaked in acetone at 40 ℃ for 10 minutes to remove the PMMA on the surface of the graphene.
(5) And attaching an insulating tape to the edge of the graphene to reduce electric leakage, and then coating a circle of conductive silver paste on the insulating tape by using an injector, and ensuring that the conductive silver paste is in contact with the graphene. And finally, heating and drying the obtained product for 30 minutes at 70 ℃ to obtain the GaAs/graphene Schottky junction battery.
(6) And clamping the Si substrate sheet by using a pair of tweezers, fishing out the substrate sheet after the substrate sheet is contacted with the soaked graphene, and placing the substrate sheet in a vacuum drying box for vacuumizing and drying at room temperature for 1 hour. And then soaking in acetone at 50 ℃ for 50 minutes to remove PMMA on the surface of the graphene, thereby obtaining the Si/graphene Schottky junction battery.
(7) And wetting the back surface of GaAs containing palladium, contacting the GaAs with graphene of the Si/graphene Schottky junction cell, and pressing and vacuumizing the GaAs and the GaAs at room temperature for 1.5h to obtain the palladium-connected double-junction GaAs/Si Schottky junction solar cell.
Example 3 (1) an n-type GaAs semiconductor doped with Si, having a thickness of 380 μm and a crystal orientation of (100),
the doping concentration is 8X 1017/cm3. As-doped n-type Si semiconductor with thickness of 420 μm, crystal orientation of (100) and doping concentration of 2 × 1018/cm3. And (3) evaporating a layer of Au on the back surface of the Si as a back electrode by an electron beam evaporation system, wherein the evaporation rate is 1.5nm/s, the thickness is 180 nm, and annealing treatment is carried out after the evaporation. The annealing temperature is 600 ℃, and the annealing time is 30 min. Splitting the substrate into 1cm pieces with a diamond pen2Of (2) a tabletAnd (5) cleaning.
(2) An o-xylene solution containing polystyrene and poly (2-vinylpyridine) (PS-b-P2 VP) was prepared, with a polystyrene concentration of 130kg/mol and a poly (2-vinylpyridine) concentration of 120 kg/mol. And spin-coating the prepared spin-coating liquid on the GaAs substrate in a spin-coating mode, wherein the spin-coating speed is 3500r/min, and the spin-coating time is 40 s. The substrate was then soaked in Na2PdCl4 solution and finally PS-b-P2VP was removed by Ar plasma treatment to yield palladium nanoparticles on GaAs.
(3) And transferring the soaked graphene, floating the graphene on the water surface, clamping the GaAs substrate sheet by using a pair of tweezers, fishing out the graphene after the graphene is contacted with the surface without the palladium nano-particles, and placing the graphene in a vacuum drying oven for vacuum pumping and room temperature drying for 1 hour. And then soaked in acetone at 40 ℃ for 10 minutes to remove the PMMA on the surface of the graphene.
(5) And attaching an insulating tape to the edge of the graphene to reduce electric leakage, and then coating a circle of conductive silver paste on the insulating tape by using an injector, and ensuring that the conductive silver paste is in contact with the graphene. And finally, heating and drying the obtained product for 30 minutes at 70 ℃ to obtain the GaAs/graphene Schottky junction battery.
(6) And clamping the Si substrate sheet by using a pair of tweezers, fishing out the substrate sheet after the substrate sheet is contacted with the soaked graphene, and placing the substrate sheet in a vacuum drying box for vacuumizing and drying at room temperature for 1 hour. And then soaking in acetone at 60 ℃ for 50 minutes to remove PMMA on the surface of the graphene, thereby obtaining the Si/graphene Schottky junction battery.
(7) And wetting the back surface of GaAs containing palladium, contacting the GaAs with graphene of the Si/graphene Schottky junction cell, and pressing and vacuumizing the GaAs and the GaAs at room temperature for 1h to obtain the palladium-connected double-junction GaAs/Si Schottky junction solar cell.
The above embodiments are preferred embodiments of the present invention, but the present invention is not limited to the above embodiments, and any other changes, modifications, substitutions, combinations, and simplifications which do not depart from the spirit and principle of the present invention should be construed as equivalents thereof, and all such changes, modifications, substitutions, combinations, and simplifications are intended to be included in the scope of the present invention.
Claims (7)
1. A double-junction GaAs/Si Schottky junction solar cell connected by palladium is characterized in that: the electrode comprises an Au back electrode, a Si substrate, a graphene layer, palladium nanoparticles, a GaAs substrate, a graphene layer and a silver paste top electrode from bottom to top in sequence;
the size of the palladium nano-particles is 10-100 nm.
2. The palladium-connected double junction GaAs/Si schottky junction solar cell of claim 1, wherein: the GaAs epitaxial layer has the crystal direction of (100) and the doping concentration of 1 multiplied by 1017-2×1018/cm3The crystal orientation of the Si epitaxial layer is (100), and the doping concentration is 5 multiplied by 1017-5×1018/cm3。
3. The palladium-connected double junction GaAs/Si schottky junction solar cell of claim 1, wherein: the thickness of the Au back electrode is 30-300nm, the thickness of the Si substrate is 50-500 mu m, the thickness of the GaAs substrate is 20-500 mu m, the thickness of the graphene layer is 1-7 atomic layers, and the thickness of the conductive silver paste top electrode is 0.2-2 mu m.
4. The method for preparing a palladium-connected double-junction GaAs/Si Schottky junction solar cell as claimed in any of claims 1 to 3, comprising the steps of:
(1) evaporating a layer of Au on the back surface of the Si substrate by adopting an electron beam evaporation method to be used as a back electrode, and annealing after the evaporation is finished;
(2) using diamond pen to crack the GaAs, Si substrate into 1-4cm2Chipping and cleaning;
(3) an o-xylene solution containing polystyrene and poly (2-vinylpyridine) (PS-b-P2 VP) was spin coated onto a GaAs substrate by spin coating, followed by soaking the substrate in Na2PdCl4In the solution, PS-b-P2VP is removed through Ar plasma treatment, and palladium nano-particles are obtained on GaAs;
(4) transferring the soaked graphene, floating the graphene on the water surface, clamping a GaAs substrate sheet by using a pair of tweezers, fishing out the graphene after the graphene is contacted with the surface without the palladium nano-particles, placing the graphene in a vacuum drying oven, vacuumizing and drying the graphene for 1 to 2 hours at room temperature, and then soaking the graphene in acetone at the temperature of between 20 and 80 ℃ for 10 to 50 minutes to remove PMMA on the surface of the graphene;
(5) attaching an insulating tape to the edge of the graphene to reduce electric leakage, coating a circle of conductive silver paste on the insulating tape by using an injector, ensuring that the conductive silver paste is in contact with the graphene, and finally heating and drying at 50-100 ℃ for 30-50 minutes to obtain a GaAs/graphene Schottky junction battery;
(6) clamping the Si substrate slice by using a forceps, fishing out the substrate slice after the substrate slice is contacted with the soaked graphene, and placing the substrate slice in a vacuum drying box for vacuumizing and drying for 1-2 hours at room temperature; then soaking in acetone at 20-80 ℃ for 10-50 minutes to remove PMMA on the surface of the graphene, and obtaining the Si/graphene Schottky junction battery;
(7) and wetting the back of GaAs containing palladium, contacting the GaAs with graphene of the Si/graphene Schottky junction battery, and pressing and vacuumizing the GaAs and the GaAs at room temperature for 2-3h to obtain the double-junction GaAs/Si Schottky junction connected with the palladium.
5. The GaAs/Si Schottky junction solar cell connected by palladium and the preparation method thereof as claimed in claim 4, wherein: the evaporation rate of the back electrode in the step (1) is 0.2-1.5 nm/s.
6. The GaAs/Si Schottky junction solar cell connected by palladium and the preparation method thereof as claimed in claim 4, wherein: the annealing treatment in the step (1) refers to an annealing treatment for 10-30min at a temperature of 100-600 ℃.
7. The GaAs/Si Schottky junction solar cell connected by palladium and the preparation method thereof as claimed in claim 4, wherein: in the step (3), the concentration of the polystyrene and the poly (2-vinylpyridine) is 100-150kg/mol, the spin-coating rotation speed is 1500-4000r/mi, and the time is 15-60 s.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202010516129.3A CN111916522A (en) | 2020-06-09 | 2020-06-09 | Palladium-connected double-junction GaAs/Si Schottky junction solar cell and preparation method thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202010516129.3A CN111916522A (en) | 2020-06-09 | 2020-06-09 | Palladium-connected double-junction GaAs/Si Schottky junction solar cell and preparation method thereof |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN111916522A true CN111916522A (en) | 2020-11-10 |
Family
ID=73237684
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202010516129.3A Pending CN111916522A (en) | 2020-06-09 | 2020-06-09 | Palladium-connected double-junction GaAs/Si Schottky junction solar cell and preparation method thereof |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN111916522A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN116916722A (en) * | 2023-08-25 | 2023-10-20 | 华南理工大学 | GaAs surface micro-nano structure, preparation method thereof and heterojunction solar cell |
Citations (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102254963A (en) * | 2011-07-29 | 2011-11-23 | 清华大学 | Graphene/silicon pillar array Schottky junction photovoltaic cell and manufacturing method thereof |
| CN103107229A (en) * | 2013-02-25 | 2013-05-15 | 中国科学院苏州纳米技术与纳米仿生研究所 | Novel graphene/semiconductor multi-junction cascading solar battery and preparation method thereof |
| US20140158189A1 (en) * | 2011-05-02 | 2014-06-12 | Mcmaster University | Areal current matching of tandem solar cells |
| CN103890976A (en) * | 2011-10-17 | 2014-06-25 | 独立行政法人产业技术综合研究所 | Semiconductor element bonding method and bonding structure |
| CN104835872A (en) * | 2015-04-21 | 2015-08-12 | 中国科学院重庆绿色智能技术研究院 | Flexible heterojunction film solar cell and preparation method thereof |
| CN107104165A (en) * | 2017-04-18 | 2017-08-29 | 云南大学 | One kind is based on graphene silicon inverted pyramid array Schottky photovoltaic cell manufacture method |
| CN109728119A (en) * | 2018-11-30 | 2019-05-07 | 浙江大学 | A kind of graphene/AlGaAs/GaAs/GaInAs Multiple heterostructures solar battery and preparation method thereof |
| CN111081805A (en) * | 2019-12-23 | 2020-04-28 | 华南理工大学 | GaAs/InGaN two-junction solar cell structure based on van der Waals force combination and preparation method thereof |
-
2020
- 2020-06-09 CN CN202010516129.3A patent/CN111916522A/en active Pending
Patent Citations (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20140158189A1 (en) * | 2011-05-02 | 2014-06-12 | Mcmaster University | Areal current matching of tandem solar cells |
| CN102254963A (en) * | 2011-07-29 | 2011-11-23 | 清华大学 | Graphene/silicon pillar array Schottky junction photovoltaic cell and manufacturing method thereof |
| CN103890976A (en) * | 2011-10-17 | 2014-06-25 | 独立行政法人产业技术综合研究所 | Semiconductor element bonding method and bonding structure |
| CN103107229A (en) * | 2013-02-25 | 2013-05-15 | 中国科学院苏州纳米技术与纳米仿生研究所 | Novel graphene/semiconductor multi-junction cascading solar battery and preparation method thereof |
| CN104835872A (en) * | 2015-04-21 | 2015-08-12 | 中国科学院重庆绿色智能技术研究院 | Flexible heterojunction film solar cell and preparation method thereof |
| CN107104165A (en) * | 2017-04-18 | 2017-08-29 | 云南大学 | One kind is based on graphene silicon inverted pyramid array Schottky photovoltaic cell manufacture method |
| CN109728119A (en) * | 2018-11-30 | 2019-05-07 | 浙江大学 | A kind of graphene/AlGaAs/GaAs/GaInAs Multiple heterostructures solar battery and preparation method thereof |
| CN111081805A (en) * | 2019-12-23 | 2020-04-28 | 华南理工大学 | GaAs/InGaN two-junction solar cell structure based on van der Waals force combination and preparation method thereof |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN116916722A (en) * | 2023-08-25 | 2023-10-20 | 华南理工大学 | GaAs surface micro-nano structure, preparation method thereof and heterojunction solar cell |
| CN116916722B (en) * | 2023-08-25 | 2024-03-15 | 华南理工大学 | GaAs surface micro-nano structure, preparation method thereof and heterojunction solar cell |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN105428438B (en) | A kind of efficient perovskite solar cell and preparation method thereof | |
| CN103996746B (en) | Manufacturing method for PERL crystalline silicon solar cell capable of being massively produced | |
| CN102299206B (en) | Heterojunction solar cell and manufacturing method thereof | |
| CN102569508A (en) | Thin-film solar photovoltaic cell with nano wire array structure and preparation method for thin-film solar photovoltaic cell | |
| CN102254963A (en) | Graphene/silicon pillar array Schottky junction photovoltaic cell and manufacturing method thereof | |
| CN107946466B (en) | Perovskite type solar cell and modification method of PEDOT (polymer doped tin oxide) PSS (patterned sapphire substrate) layer thereof | |
| CN106206953B (en) | A kind of alcohol-soluble molybdenum oxide interlayer materials synthetic method and application | |
| CN102074590A (en) | Back contact electrode in cadmium telluride membrane solar cell structure and preparation method thereof | |
| CN102584334A (en) | Method for preparing graphene composite thin film on surface of silicon slice | |
| CN102227002A (en) | Polysilicon nanowire solar cell and preparation method thereof | |
| CN111261783B (en) | Novel electron transport layer perovskite solar cell and preparation method thereof | |
| CN104916785A (en) | CH3NH3PbI3 thin-film solar cell preparation method | |
| CN103681965A (en) | Preparation method of flexible substrate silicon nanowire heterojunction solar cell | |
| CN103066160A (en) | Method for generating porous silicon on solar battery silicon wafer surface | |
| CN106098944A (en) | A kind of solaode based on nano-onions carbon composite anode cushion | |
| CN103296211A (en) | Organic-two-dimensional crystal-inorganic hybrid heterojunction solar cell device and preparation method thereof | |
| CN102637755A (en) | Nanometer structure copper zinc tin sulfide (CZTS) film photovoltaic cell and preparation method of nanometer structure CZTS film photovoltaic cell | |
| CN104332522B (en) | Graphene double-junction solar battery and preparation method thereof | |
| CN102201486B (en) | Preparation technology for silicon nano-aperture array photovoltaic material and photovoltaic cell | |
| CN111916522A (en) | Palladium-connected double-junction GaAs/Si Schottky junction solar cell and preparation method thereof | |
| CN110767777A (en) | Preparation method of low-cost high-efficiency laminated solar cell | |
| CN109755395B (en) | Method for preparing organic polymer thin-film solar cell by applying air knife coating | |
| CN219476695U (en) | Double-sided gallium arsenide solar cell | |
| CN105470338B (en) | A kind of flexible overlapping solar cell and preparation method | |
| CN111916521A (en) | Double-junction GaAs/Si Schottky junction solar cell with interface plasmon effect and preparation method thereof |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| RJ01 | Rejection of invention patent application after publication | ||
| RJ01 | Rejection of invention patent application after publication |
Application publication date: 20201110 |