CN111913359A - Photoetching repair method and device - Google Patents
Photoetching repair method and device Download PDFInfo
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- CN111913359A CN111913359A CN202010778863.7A CN202010778863A CN111913359A CN 111913359 A CN111913359 A CN 111913359A CN 202010778863 A CN202010778863 A CN 202010778863A CN 111913359 A CN111913359 A CN 111913359A
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/16—Coating processes; Apparatus therefor
- G03F7/168—Finishing the coated layer, e.g. drying, baking, soaking
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Abstract
The embodiment of the invention provides a photoetching repairing method and a device, wherein the photoetching repairing method comprises the following steps: providing a substrate to be etched, wherein a layer to be etched and a photoresist layer are sequentially formed on the surface of the substrate, and the photoresist layer comprises a defect region; repairing the defect area of the photoresist layer by using repair laser, wherein the repairing comprises thinning and/or clearing; and etching the layer to be etched according to the repaired photoresist layer. The photoetching repair method and the photoetching repair device provided by the embodiment of the invention can convert poor etching caused by PR (photoresist) glue into poor maintainability, reduce the maintenance risk coefficient and improve the product yield.
Description
Technical Field
The embodiment of the invention relates to the technical field of display panel etching repair, in particular to a photoetching repair method and a photoetching repair device.
Background
In the Display industry, circuits of Liquid Crystal Display panels (LCD for short) and Organic Light-Emitting semiconductor Display panels (OLED for short) need to be indirectly realized by exposure using photoresist.
In the prior art, the defects after exposure and etching are all carried out after the photoresist is stripped. After the photoresist is stripped, a corresponding circuit structure is arranged on the stripped substrate, so that defects caused by etching are difficult to repair, or when the etching defects are repaired, the circuit is easily damaged, and the product is poor.
Disclosure of Invention
The embodiment of the invention provides a photoetching repair method and device, and aims to reduce the risk of poor etching repair caused by photoresist, reduce the difficulty of poor repair and improve the yield.
To achieve the object, in a first aspect, an embodiment of the present invention provides a photolithography repairing method, including:
providing a substrate to be etched, wherein a layer to be etched and a photoresist layer are sequentially formed on the surface of the substrate, and the photoresist layer comprises a defect region.
And repairing the defect area of the photoresist layer by adopting repair laser, wherein the repairing comprises thinning and/or clearing.
And etching the layer to be etched according to the photoresist layer after the repairing treatment.
Optionally, the defect region includes a region to be thinned and/or a region to be removed, and the repair laser includes a nanosecond laser and/or a femtosecond laser.
The repairing laser is adopted to repair the defect area of the photoresist layer, and the repairing laser comprises any one or combination of the following modes:
thinning the region to be thinned of the photoresist layer by adopting nanosecond laser;
and removing the region to be removed of the photoresist layer by using nanosecond laser and/or femtosecond laser.
Optionally, the photoresist layer is a photoresist mask pattern after exposure and development.
The repairing laser is adopted to repair the defect area of the photoresist layer, and the repairing laser comprises the following steps: and adopting a repair laser to repair the defect area of the photoresist mask pattern.
Etching the layer to be etched according to the repaired photoresist layer, including: and etching the layer to be etched according to the photoresist mask pattern after the repair treatment.
Optionally, the etching the layer to be etched according to the repaired photoresist layer includes: exposing and developing the repaired photoresist layer to form a photoresist mask pattern; and etching the layer to be etched according to the photoresist mask pattern.
Optionally, after the etching the layer to be etched according to the photoresist layer after the repairing, the method further includes: and removing the photoresist mask pattern.
Optionally, the femtosecond laser and the nanosecond laser have the same wavelength.
Optionally, the wavelength of the repair laser is in the range of 0.1-20 μm.
Optionally, after the repairing laser is used to repair the defect area of the photoresist layer, the method further includes: and detecting the defects of the photoresist layer after the repairing treatment, and confirming the completion of defect repairing.
In a second aspect, an embodiment of the present invention further provides a photolithography repairing apparatus, where the photolithography repairing apparatus repairs a photoresist layer on a substrate to be etched by using the photolithography repairing method according to any one of the first aspects; the photoetching repair device comprises a base station, a laser emitter and two adjustable lenses.
Optionally, the lithographic repair apparatus further includes an image collector and a display, and the display is electrically connected to the image collector; the image collector is used for collecting a repair image in the photoresist repair process; the display is used for displaying the repaired image.
According to the photoetching repair method and device provided by the embodiment of the invention, the layer to be etched and the photoresist layer are sequentially formed on the surface of the substrate, wherein the photoresist layer comprises the defect region, the defect region in the photoresist layer is thinned or cleared by the repair laser, the method is simple and convenient, and the repair of the defect region in the photoresist layer by the repair laser is realized after the photoresist mask is stripped and before the photoresist mask is stripped, so that the etching defect caused by the photoresist is ensured to be converted into the repairable defect, and then the repair is carried out. In addition, the repairing is carried out before the stripping, and the completion of the subsequent process is not required to be waited, so that the condition that the resources are wasted due to the damage caused by the maintenance after the completion of the subsequent process is avoided, the process time is reduced, and the equipment productivity is improved.
Drawings
Fig. 1 is a schematic flow chart of a photolithography repair method according to an embodiment of the present invention.
Fig. 2 is a schematic diagram of poor etching performance according to an embodiment of the present invention.
Fig. 3 is a schematic diagram of another poor etching performance provided by the embodiment of the invention.
Fig. 4 is a schematic diagram of another poor etching performance provided by an embodiment of the invention.
FIG. 5 is a flow chart of another photolithography repair method according to an embodiment of the present invention.
FIG. 6 is a flowchart illustrating another photolithography repairing method according to an embodiment of the present invention.
FIG. 7 is a flowchart illustrating another photolithography repairing method according to an embodiment of the present invention.
Fig. 8 is a schematic diagram of the relationship between the laser wavelength and the absorption rate according to the embodiment of the present invention.
FIG. 9 is a schematic structural diagram of a lithographic repair apparatus according to an embodiment of the present invention.
Detailed Description
In order to make the technical problems solved, the technical solutions adopted, and the technical effects achieved by the embodiments of the present invention clearer, the technical solutions of the present invention are further described below by way of specific embodiments with reference to the accompanying drawings. It is to be understood that the specific embodiments described herein are merely illustrative of the invention and are not limiting of the invention. It should be further noted that, for the convenience of description, only some but not all of the relevant aspects of the present invention are shown in the drawings.
Fig. 1 is a schematic flow chart of a photolithography repair method according to an embodiment of the present invention, and as shown in fig. 1, the photolithography repair method includes:
s101, providing a substrate to be etched, wherein a layer to be etched and a photoresist layer are sequentially formed on the surface of the substrate, and the photoresist layer comprises a defect region.
The defect area refers to poor etching caused by photoresist, generally, when a photoresist layer is spin-coated on a substrate, the surface of the substrate is not thoroughly cleaned, so that a foreign substance exists on the substrate, when the photoresist layer is spin-coated, the foreign substance area forms strong adsorption to the photoresist due to the existence of the foreign substance, so that the photoresist in the foreign substance area is not uniformly formed, exemplarily, fig. 2 is a schematic diagram of poor etching provided by an embodiment of the invention, fig. 3 is a schematic diagram of another poor etching provided by an embodiment of the invention, fig. 4 is a schematic diagram of another poor etching provided by an embodiment of the invention, as shown in fig. 2, 3 and 4, when the shape of the foreign substance existing on the substrate is an irregular linear shape, the poor etching as shown in fig. 2 is generated, and when the shape of the foreign substance existing on the substrate is a point, the poor etching as shown in fig. 3 is generated, such poor etching will produce many rings of halos around the foreign matter, making effective repair impossible after the photoresist is stripped, resulting in poor product. Although the photoresist in fig. 4 is unevenly distributed and can be repaired after stripping, the repair after stripping is likely to damage the pixels, resulting in a failed repair.
And S102, repairing the defect area of the photoresist layer by using repair laser, wherein the repairing comprises thinning and/or removing.
The photoresist layer here may be a photoresist layer before exposure development, or may be a patterned photoresist layer after exposure development. The defect area of the photoresist layer is repaired by adopting the repair laser, the operation mode is simple and effective, the photoresist can be repaired in a thinning mode, the photoresist can also be repaired in a clearing mode, and the photoresist can also be repaired in a thinning and clearing mode. The step can utilize abundant repairing modes, adjust the repairing modes in real time according to different defects and material thicknesses, and improve the repairing efficiency and accuracy.
S103, etching the layer to be etched according to the repaired photoresist layer.
The repaired photoresist layer etching layer is etched, so that the accuracy of product etching is guaranteed, the yield is improved, and the possibility of finished product waste is reduced.
According to the photoresist repairing method provided by the embodiment of the invention, after the photoresist mask is stripped, the defect area of the photoresist layer is repaired by using the repairing laser, on one hand, poor etching caused by the photoresist is converted into poor maintainability, so that the poor maintainability is achieved, on the other hand, the photoresist is repaired before the photoresist is stripped, the damage to metal wiring and circuits is avoided, the maintenance risk is reduced, and the product yield is improved. Meanwhile, the repairing is carried out before stripping, and the repairing is carried out together with the circuit repairing without waiting for the completion of the subsequent process, so that the condition that the resource is wasted due to damage caused by maintenance after the subsequent process is completed is avoided, the process time is reduced, and the equipment productivity is improved.
Optionally, the defect region includes a region to be thinned and/or a region to be removed, and the repair laser includes a nanosecond laser and/or a femtosecond laser.
Further, the step S102 is further detailed, and the step S102 includes: thinning the region to be thinned of the photoresist layer by adopting nanosecond laser; and removing the region to be removed of the photoresist layer by using nanosecond laser and/or femtosecond laser. Fig. 5 is a schematic flow chart of another photolithography repairing method according to an embodiment of the present invention, and as shown in fig. 5, the photolithography repairing method includes:
s201, providing a substrate to be etched, wherein a layer to be etched and a photoresist layer are sequentially formed on the surface of the substrate, and the photoresist layer comprises a defect region.
S202, thinning the area to be thinned of the photoresist layer by adopting nanosecond laser; and removing the region to be removed of the photoresist layer by using nanosecond laser and/or femtosecond laser.
The thinning region refers to a region where the photoresist is not uniform, and for example, when the photoresist is spin-coated, due to a process technology, the photoresist is spin-coated on a certain position of the substrate to be uneven, and the protruding part is the thinning region. The region to be removed refers to a region where the photoresist is redundant, and for example, when the photoresist is etched by ultraviolet rays, a burr is left on a certain part to be etched due to technical reasons, and the burr is the region to be removed. Through setting for the thinning area and waiting to clear away the district, repair laser according to different regional selection different energy, wavelength restores, improves and restores the precision, exemplarily, because nanosecond laser monopulse energy is great, consequently adopt nanosecond pulse to carry out the thinning treatment to the photoresist, improve the effect of attenuate, nevertheless because nanosecond laser frequency is lower, consequently be not enough in the aspect of the clearance that becomes more meticulous, through adopting the less but higher femtosecond pulse of frequency of monopulse energy, can improve the precision of clearing away the photoresist, guarantee to the accurate restoration of defective area colleges and universities of photoresist layer. It is to be understood that the photoresist includes a negative photoresist and a positive photoresist, and in the embodiment of the present application, the negative photoresist (PR photoresist) is used for illustration and is not limited to the present application. It is understood that any one or combination of the above methods for repairing a defective layer of a photoresist layer is within the scope of the present application and will not be described herein again.
And S203, etching the layer to be etched according to the repaired photoresist layer.
Optionally, the photoresist layer is a photoresist mask pattern after exposure and development. On the basis, S102 and S103 are further refined, wherein S102 comprises: and repairing the defect area of the photoresist mask pattern by using repair laser. S103 includes: and etching the layer to be etched according to the repaired photoresist mask pattern. Fig. 6 is a schematic flow chart of another photolithography repairing method according to an embodiment of the present invention, and as shown in fig. 6, the photolithography repairing method includes:
s301, providing a substrate to be etched, wherein a layer to be etched and a photoresist layer are sequentially formed on the surface of the substrate, and the photoresist layer comprises a defect region.
And S302, repairing the defect area of the photoresist mask pattern by adopting repair laser.
After the photoresist is developed, the defects of the photoresist mask pattern are repaired by using the repair laser, so that the mask pattern can be refined more, and the yield of products is improved.
S303, etching the layer to be etched according to the repaired photoresist mask pattern
And etching the layer to be etched through the repaired photoresist mask pattern, so that the etching precision of the layer to be etched is improved, and the etching defects are reduced.
Optionally, further refining S103, S103 includes: exposing and developing the repaired photoresist layer to form a photoresist mask pattern; and etching the layer to be etched according to the photoresist mask pattern. Fig. 7 is a diagram of another photolithography repairing method according to an embodiment of the present invention, and as shown in fig. 7, the photolithography repairing method includes:
s401, providing a substrate to be etched, and sequentially forming a layer to be etched and a photoresist layer on the surface of the substrate, wherein the photoresist layer comprises a defect region.
S402, repairing the defect area of the photoresist layer by adopting repair laser, wherein the repairing comprises thinning and/or removing.
And S403, exposing and developing the repaired photoresist layer to form a photoresist mask pattern, and etching the layer to be etched according to the photoresist mask pattern.
The photoresist mask pattern is formed by exposing and developing the repaired photoresist, so that the photoresist is repaired between exposure and development, the quality of exposure and development is improved, meanwhile, the layer to be etched is etched according to the photoresist mask pattern, and the accuracy of the layer to be etched is ensured.
Optionally, after etching the layer to be etched according to the photoresist layer after the repairing process, the method further includes: and removing the photoresist mask pattern.
After the photoresist is repaired, the photoresist is stripped again, the circuit cannot be damaged in the maintenance process, the maintenance risk is reduced, meanwhile, the photoresist is maintained before stripping, the problem that the later-stage maintenance cannot be carried out due to the fact that the defects formed by the photoresist become unrepairable defects, the maintenance cannot be carried out, the product quality is influenced, the photoresist is maintained before stripping, the problem that resources are wasted due to the fact that products are scrapped after follow-up procedures are completed and maintained again is solved, and the equipment productivity is improved.
Optionally, the femtosecond laser and the nanosecond laser have the same wavelength. Fig. 8 is a schematic diagram of a relationship between a laser wavelength and an absorption rate, as shown in fig. 8, as a wavelength of laser light increases, there is an inverse trend of absorption rates of different metals to the laser light, for example, a metal layer material in a substrate is silver (Ag), when the wavelength of the laser light is below 355nm, the material silver substantially does not absorb the laser light, and for a non-metal photoresist material, the absorption rate is easy. When the wavelength of the laser light is changed from 355nm to 20 μm, the absorption rate of the material silver to the laser light is reduced. According to the embodiment of the invention, nanosecond laser with the wavelength of 266nm and femtosecond laser with the wavelength of 266nm are used as repair laser, parameters are conveniently set and the complexity of operation is reduced by setting the wavelength of the nanosecond laser to be equal to that of the femtosecond laser, and the adsorption rate of the photoresist is increased by setting the wavelength of the nanosecond laser to be less than that of the femtosecond laser to be less than 355nm on the premise of ensuring that a substrate is not influenced.
Optionally, the repair laser has a wavelength in the range of 0.1-20 μm.
The wavelength range of the repair laser is set to be 0.1-20 mu m, so that the repair laser is convenient to regulate and control, and meanwhile, the energy of the repair laser is ensured to be in a safe range, and the safety of the repair process is ensured.
Optionally, after the repairing laser is used to repair the defective area of the photoresist layer, the method further includes: and detecting the defects of the photoresist layer after the repairing treatment, and confirming the completion of defect repairing.
After the defect area of the photoresist layer is repaired, the defect of the repaired photoresist layer is detected, so that the repaired yield is ensured, and meanwhile, the condition that the product failed in repair flows into the subsequent process flow to influence the processing period is avoided.
Fig. 9 is a schematic structural diagram of a photolithography repairing apparatus according to an embodiment of the present invention, and as shown in fig. 9, a photolithography repairing apparatus for repairing a photoresist layer on a substrate to be etched by using any one of the photolithography repairing methods described above; the lithography repair device comprises a base station 1, a laser emitter 2 and two adjustable mirrors 3.
With continuing reference to fig. 9, optionally, the lithographic repair apparatus further includes an image collector 4 and a display 5, the display 5 and the image collector 4 being electrically connected; the image collector 4 is used for collecting a repair image in the photoresist repair process; the display 5 is used to display the repair image.
Through setting up image collector 4 and display 5, utilize image collector 4 to gather the image of restoreing the in-process to show through display 5, make operating personnel can operate according to the image that shows in display 5, reduce the degree of difficulty of operation, improve prosthetic efficiency and precision.
It is to be noted that the foregoing is only illustrative of the preferred embodiments of the present invention and the technical principles employed. It will be understood by those skilled in the art that the present invention is not limited to the particular embodiments described herein, but is capable of various obvious modifications, rearrangements, combinations and substitutions as will now become apparent to those skilled in the art without departing from the scope of the invention. Therefore, although the present invention has been described in greater detail by the above embodiments, the present invention is not limited to the above embodiments, and may include other equivalent embodiments without departing from the spirit of the present invention, and the scope of the present invention is determined by the scope of the appended claims.
Claims (10)
1. A lithographic repair method, comprising:
providing a substrate to be etched, wherein a layer to be etched and a photoresist layer are sequentially formed on the surface of the substrate, and the photoresist layer comprises a defect region;
repairing the defect area of the photoresist layer by using repair laser, wherein the repairing comprises thinning and/or clearing;
and etching the layer to be etched according to the photoresist layer after the repairing treatment.
2. The lithographic repair method according to claim 1, wherein the defect region comprises a region to be thinned and/or a region to be removed, and the repair laser comprises a nanosecond laser and/or a femtosecond laser;
the repairing laser is adopted to repair the defect area of the photoresist layer, and the repairing laser comprises any one or combination of the following modes:
thinning the region to be thinned of the photoresist layer by adopting nanosecond laser;
and removing the region to be removed of the photoresist layer by using nanosecond laser and/or femtosecond laser.
3. The photolithographic method of repair of claim 1, wherein the photoresist layer is a photoresist mask pattern after exposure and development;
the repairing laser is adopted to repair the defect area of the photoresist layer, and the repairing laser comprises the following steps:
repairing the defect area of the photoresist mask pattern by using repair laser;
etching the layer to be etched according to the repaired photoresist layer, including:
and etching the layer to be etched according to the photoresist mask pattern after the repair treatment.
4. The photolithographic method of repairing as defined in claim 1, wherein said etching the layer to be etched according to the photoresist layer after the repairing process comprises:
exposing and developing the repaired photoresist layer to form a photoresist mask pattern;
and etching the layer to be etched according to the photoresist mask pattern.
5. The photolithography repairing method according to claim 3 or 4, further comprising, after the etching the layer to be etched according to the photoresist layer after the repairing process, the steps of:
and removing the photoresist mask pattern.
6. The lithographic repair method according to claim 2, wherein the femtosecond laser and the nanosecond laser have the same wavelength.
7. The lithographic repair method according to claim 1, wherein the repair laser has a wavelength in the range of 0.1-20 μm.
8. The photolithography repair method according to claim 1, further comprising, after performing a repair process on the defective region of the photoresist layer using a repair laser: and detecting the defects of the photoresist layer after the repairing treatment, and confirming the completion of defect repairing.
9. A photolithography repairing apparatus, characterized in that, the photolithography repairing method according to any one of the claims 1 to 8 is adopted to repair the photoresist layer on the substrate to be etched;
the photoetching repair device comprises a base station, a laser emitter and two adjustable lenses.
10. The apparatus according to claim 9, further comprising an image collector and a display, wherein the display is electrically connected to the image collector;
the image collector is used for collecting a repair image in the photoresist repair process;
the display is used for displaying the repaired image.
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| CN202010778863.7A CN111913359A (en) | 2020-08-05 | 2020-08-05 | Photoetching repair method and device |
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| CN202010778863.7A CN111913359A (en) | 2020-08-05 | 2020-08-05 | Photoetching repair method and device |
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Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5506080A (en) * | 1995-01-23 | 1996-04-09 | Internation Business Machines Corp. | Lithographic mask repair and fabrication method |
| JPH10312066A (en) * | 1997-05-14 | 1998-11-24 | Toshiba Corp | Forming method of resist pattern |
| US20050221208A1 (en) * | 2004-04-06 | 2005-10-06 | Mitsubishi Denki Kabushiki Kaisha | Resist pattern formation method, patterned substrate manufacturing method, and resist pattern formation apparatus |
| CN109753183A (en) * | 2019-01-02 | 2019-05-14 | 京东方科技集团股份有限公司 | A kind of restorative procedure and touch-control display panel of transparent electrode pattern |
| CN110391135A (en) * | 2019-08-08 | 2019-10-29 | 武汉新芯集成电路制造有限公司 | Remove the manufacturing method of the remaining method of photoresist and semiconductor devices |
-
2020
- 2020-08-05 CN CN202010778863.7A patent/CN111913359A/en active Pending
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5506080A (en) * | 1995-01-23 | 1996-04-09 | Internation Business Machines Corp. | Lithographic mask repair and fabrication method |
| JPH10312066A (en) * | 1997-05-14 | 1998-11-24 | Toshiba Corp | Forming method of resist pattern |
| US20050221208A1 (en) * | 2004-04-06 | 2005-10-06 | Mitsubishi Denki Kabushiki Kaisha | Resist pattern formation method, patterned substrate manufacturing method, and resist pattern formation apparatus |
| CN109753183A (en) * | 2019-01-02 | 2019-05-14 | 京东方科技集团股份有限公司 | A kind of restorative procedure and touch-control display panel of transparent electrode pattern |
| CN110391135A (en) * | 2019-08-08 | 2019-10-29 | 武汉新芯集成电路制造有限公司 | Remove the manufacturing method of the remaining method of photoresist and semiconductor devices |
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