CN111909638A - Temporary bonding adhesive material for preventing wafer from being damaged by ultraviolet laser - Google Patents

Temporary bonding adhesive material for preventing wafer from being damaged by ultraviolet laser Download PDF

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CN111909638A
CN111909638A CN202010806082.4A CN202010806082A CN111909638A CN 111909638 A CN111909638 A CN 111909638A CN 202010806082 A CN202010806082 A CN 202010806082A CN 111909638 A CN111909638 A CN 111909638A
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parts
temporary bonding
antioxidant
wafer
ultraviolet laser
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张国平
李绪军
孙蓉
刘强
孙德亮
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Shenzhen Institute of Advanced Electronic Materials
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Shenzhen Institute of Advanced Electronic Materials
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    • CCHEMISTRY; METALLURGY
    • C09DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09JADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J123/00Adhesives based on homopolymers or copolymers of unsaturated aliphatic hydrocarbons having only one carbon-to-carbon double bond; Adhesives based on derivatives of such polymers
    • C09J123/02Adhesives based on homopolymers or copolymers of unsaturated aliphatic hydrocarbons having only one carbon-to-carbon double bond; Adhesives based on derivatives of such polymers not modified by chemical after-treatment
    • C09J123/04Homopolymers or copolymers of ethene
    • C09J123/08Copolymers of ethene
    • CCHEMISTRY; METALLURGY
    • C09DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09JADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J11/00Features of adhesives not provided for in group C09J9/00, e.g. additives
    • C09J11/02Non-macromolecular additives
    • C09J11/04Non-macromolecular additives inorganic
    • CCHEMISTRY; METALLURGY
    • C09DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09JADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J11/00Features of adhesives not provided for in group C09J9/00, e.g. additives
    • C09J11/02Non-macromolecular additives
    • C09J11/06Non-macromolecular additives organic
    • CCHEMISTRY; METALLURGY
    • C09DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09JADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J123/00Adhesives based on homopolymers or copolymers of unsaturated aliphatic hydrocarbons having only one carbon-to-carbon double bond; Adhesives based on derivatives of such polymers
    • C09J123/02Adhesives based on homopolymers or copolymers of unsaturated aliphatic hydrocarbons having only one carbon-to-carbon double bond; Adhesives based on derivatives of such polymers not modified by chemical after-treatment
    • C09J123/04Homopolymers or copolymers of ethene
    • C09J123/08Copolymers of ethene
    • C09J123/0807Copolymers of ethene with unsaturated hydrocarbons only containing more than three carbon atoms
    • CCHEMISTRY; METALLURGY
    • C08ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08LCOMPOSITIONS OF MACROMOLECULAR COMPOUNDS
    • C08L2205/00Polymer mixtures characterised by other features
    • C08L2205/02Polymer mixtures characterised by other features containing two or more polymers of the same C08L -group
    • C08L2205/025Polymer mixtures characterised by other features containing two or more polymers of the same C08L -group containing two or more polymers of the same hierarchy C08L, and differing only in parameters such as density, comonomer content, molecular weight, structure
    • CCHEMISTRY; METALLURGY
    • C08ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08LCOMPOSITIONS OF MACROMOLECULAR COMPOUNDS
    • C08L2205/00Polymer mixtures characterised by other features
    • C08L2205/03Polymer mixtures characterised by other features containing three or more polymers in a blend
    • C08L2205/035Polymer mixtures characterised by other features containing three or more polymers in a blend containing four or more polymers in a blend

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  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Adhesives Or Adhesive Processes (AREA)

Abstract

The invention relates to the technical field of adhesives, and discloses a temporary bonding adhesive material for protecting a wafer from ultraviolet laser damage in thin wafer processing, which is prepared from the following raw materials in parts by weight: 25-45 parts of polymer matrix resin, 0-5 parts of tackifying resin, 0.2-2 parts of high-temperature-resistant antioxidant, 0-0.3 part of flatting agent, 0.2-5 parts of light-absorbing material, 0-5 parts of reflecting material and 55-75 parts of solvent. The invention can better protect the surface of the wafer from damage by improving the ultraviolet laser absorbance of the temporary bonding adhesive layer and reducing the ultraviolet laser transmittance, and can effectively prevent the ultraviolet laser from damaging the surface of the device wafer through the temporary bonding material.

Description

Temporary bonding adhesive material for preventing wafer from being damaged by ultraviolet laser
Technical Field
The invention relates to the technical field of adhesives, in particular to a temporary bonding adhesive material for protecting a wafer from ultraviolet laser damage in thin wafer processing.
Background
In recent years, as moore's law approaches the limit, advanced packaging technology has been rapidly developed as a core direction of technology development beyond the moore's era, and various advanced packaging process platforms and methods emerge, with no exception toward smaller, thinner, more functional, and lower cost.
The temporary bonding/debonding is used as a main body of a thin wafer holding technology, the device wafer is fixed on the bearing wafer through the effect of the temporary bonding glue material, the bearing wafer is used for providing enough mechanical supporting force for the thin wafer, the mechanical toughness of the thin wafer is increased, and the device wafer can be ensured to smoothly and safely complete subsequent process procedures, such as photoetching, etching, passivation, electroplating, reflow soldering and the like. With the rapid development of packaging technology, temporary bonding/debonding has been vigorously developed and widely applied to the field of Wafer Level Packaging (WLP), such as PoP package-on-package (PoP), Fan-out (Fan-out) package, and 2.5D/3D package under Through Silicon Via (TSV) technology.
The development of temporary bonding materials goes through 3-4 generations, the main difference is that the respective bonding-breaking modes are different, and the latest generation of temporary bonding material system based on ultraviolet laser bonding-breaking is used by matching a laser release material (LRL) and a temporary bonding material (TBL) together. The temporary bonding material system is suitable for advanced packaging process platforms leading in industries such as Si interposer, eWLB, Fan-in, Fan-out,2.5D/3D and the like. After all the processes are finished, the laser release material can be irradiated by 308nm/355nm ultraviolet laser to generate photochemical reaction, and is decomposed with the temporary bonding material to lose viscosity, so that the high-efficiency, room-temperature and low-stress separation of the thin wafer is finally realized, the bonding-releasing efficiency is extremely high, and the laser release material is widely used. However, when the temporary bonding system is used for wafers made of special materials, such as laser-sensitive wafers made of ceramics, ultraviolet laser penetrates through the temporary bonding adhesive material layer and damages the wafer body; on the other hand, after the laser release layer is acted by larger laser energy, the temporary bonding glue layer may still penetrate through the temporary bonding glue layer to directly act on the surface of the chip to damage the chip, so that a temporary bonding glue material for protecting the wafer from ultraviolet laser damage needs to be developed.
In the existing temporary bonding material system based on ultraviolet laser debonding, the method for solving the above-mentioned deficiency is to improve the absorption capacity of the laser release layer to the ultraviolet laser, and reduce the penetration of the ultraviolet laser through the laser release layer as much as possible, for example, in the CN110295026A patent, the absorbance of the laser release layer is increased by adding light absorbing materials such as carbon black and silica in the laser release material polyimide; CN110396371A also achieves the object by adding a color masking material into the laser release layer. However, the method is not very safe, the laser release layer is a thin layer with a thickness of nanometer level in general, although the material itself has high laser absorption but is limited by the limitation of film thickness, the situation of laser penetration is still possible, so the method transfers the target to the temporary bonding glue layer, and better protects the surface of the wafer from damage by improving the ultraviolet laser absorbance of the temporary bonding glue.
Disclosure of Invention
In order to solve the problem that when ultraviolet laser acts on a laser release layer in an ultraviolet laser bonding-breaking temporary bonding material system, the laser penetrates through a temporary bonding adhesive layer and damages the surface of a wafer, the invention better protects the surface of the wafer from damage by improving the ultraviolet laser absorbance of the temporary bonding adhesive layer and reducing the ultraviolet laser transmittance, and provides a temporary bonding adhesive material for protecting the wafer from damage caused by the ultraviolet laser.
The technical scheme of the invention is as follows:
a temporary bonding adhesive material for protecting a wafer from ultraviolet laser damage is prepared from the following raw materials in parts by weight: 25-45 parts of polymer matrix resin, 0-5 parts of tackifying resin, 0.2-2 parts of high-temperature-resistant antioxidant, 0-0.3 part of flatting agent, 0.2-5 parts of light-absorbing material, 0-5 parts of reflecting material and 55-75 parts of solvent. By the action of the ultraviolet light absorption material and the light reflection material in the system, ultraviolet laser is prevented from penetrating through the temporary bonding glue layer, so that the surface of the device wafer is protected.
Further, the light absorption material comprises one or two of a UV absorber and carbon black, the UV absorber comprises but is not limited to salicylate, benzophenones, benzotriazoles, substituted acrylonitrile and triazine ultraviolet absorbers, and the particle size of the carbon black is less than 500 nm.
Wherein, the salicylate UV absorbent comprises resorcinol monobenzoate, phenyl salicylate and the like; the benzophenone-based UV absorber includes 2, 4-dihydroxybenzophenone, 2-hydroxy-4-methoxybenzophenone, 2-hydroxy-4-n-octoxybenzophenone, etc.; benzotriazole-based UV absorbers include 2- (2' -hydroxy-5 ' -methylphenyl) benzotriazole, 2- (2-hydroxy-3, 5-bis (a, a-dimethylbenzyl) phenyl) benzotriazole, 2- (2-hydroxy-3-tert-butyl-5-methylphenyl) -5-chlorobenzotriazole, 2- (2-hydroxy-3, 5-di-tert-phenyl) -5-chlorobenzotriazole, 2- (2-hydroxy-3, 5-ditert-phenyl) benzotriazole, 2- (2-hydroxy-4 ' -benzoylylphenyl) -5 chloro-2H-benzotriazole and the like; substituted acrylonitrile type UV absorbers such as 2-cyano-3, 3-diphenyl-2-propenoic acid-2-ethylhexyl ester, ethyl 2-cyano-3, 3-diphenylacrylate; comprises the following steps of; triazine ultraviolet absorbers UV absorbers include 2- (4, 6-bis (2, 4-dimethylphenyl) -1,3, 5-triazin-2-yl) -5-octyloxyphenol, 2- (4, 6-diphenyl-1, 3, 5-triazin-2) -5-n-hexylalkoxyphenol, and the like.
Furthermore, the reflective material comprises one or two of silicon dioxide and glass powder, and the particle size of the reflective material is less than 500 nm.
Further, the selected polymer matrix resin is one or two or three of ethylene-propylene copolymer, ethylene-propylene-norbornene copolymer and ethylene-norbornene copolymer.
Further, the selected solvent is one or more of dodecene, cyclohexane, methylcyclohexane, pinene, limonene, dipentene, mesitylene, p-methylisoprene, bicyclohexene, cyclododecene, 1-tert-butyl-3, 5-dimethylbenzene, butylcyclohexane, cyclooctane, cycloheptane, methyl ethyl ketone and cyclopentanone.
Further, the tackifying resin selected is esterified rosin, and the esterified rosin comprises one or two of pentaerythritol rosin ester, rosin glycerol ester, rosin modified phenolic resin and rosin modified xylene formaldehyde resin;
further, the selected antioxidant is a composite antioxidant, the composite antioxidant is composed of a hindered phenol main antioxidant, a phosphite ester auxiliary antioxidant and a thioether auxiliary antioxidant, and the hindered phenol main antioxidant is as follows: phosphite ester auxiliary antioxidant: the weight ratio of the thioether auxiliary antioxidant is 1: (0.1-1): (0.1-1) Compound antioxidant.
Furthermore, the selected hindered phenol main antioxidant is one or two of tetra [ beta- (3, 5-di-tert-butyl-4-hydroxyphenyl) propionic acid ] pentaerythritol ester (antioxidant 1010) or 3, 9-bis [2- [3- (3-tert-butyl-4-hydroxy-5-methylphenyl) -propionyloxy ] -1, 1-dimethylethyl ] -2,4,8, 10-tetraoxaspiro [5.5] undecane (antioxidant GA-80).
Furthermore, the selected phosphite ester auxiliary antioxidant is one or two of bis (2, 6-di-tert-butyl-4-methylphenyl) pentaerythritol diphosphate or 2,2' -methylenebis (4, 6-di-tert-butylphenyl) isooctyloxy phosphite (antioxidant HP-10);
furthermore, the thioether auxiliary antioxidant is one or two of 3- (dodecylthio) propionic acid-2, 2-bis [ [3- (dodecylthio) -propionyloxy ] methyl ] -1, 3-propylene glycol ester (antioxidant 412S) or didodecyl thiodipropionate;
further, the selected leveling agent is one of a polyester modified siloxane leveling agent, a polyether modified siloxane leveling agent or an aralkyl modified siloxane leveling agent.
The preparation method of the temporary bonding adhesive material for protecting the wafer from ultraviolet laser damage comprises the steps of adding 25-45 parts of polymer matrix resin, 0-5 parts of tackifying resin, 0.2-2 parts of antioxidant, 0-0.3 part of flatting agent, 0.2-5 parts of light absorbing material and 0-5 parts of light reflecting material into 55-75 parts of solvent, and uniformly dispersing the solution by using a mechanical stirring mode, wherein the rotating speed is 500-3000rpm, and the stirring time is 0.5-8 h.
After stirring, ball milling and dispersing for 0.5-5h by using a ball mill, and then filtering by using a filter element with the particle size of less than 5 um.
Compared with the prior art, the invention has the following beneficial effects:
1. the pressure of the laser release material on absorbing ultraviolet laser and protecting the surface of the wafer from being damaged by the ultraviolet laser is reduced, and the process parameter range of laser release is wider;
2. the temporary bonding material is added with the ultraviolet light absorption material, ultraviolet laser penetrating through the material of the laser release layer is absorbed by the temporary bonding material, and the ultraviolet laser cannot reach the surface of the device wafer or the energy of the ultraviolet laser reaching the surface of the device is not enough to damage the surface, so that the device wafer is protected;
3. the temporary bonding material is added with the ultraviolet reflecting material, the ultraviolet laser penetrating through the material of the laser release layer is reflected to the laser release layer by the ultraviolet reflecting material, the ultraviolet laser cannot reach the surface of the device wafer or the energy of the ultraviolet laser reaching the surface of the device is not enough to damage the surface, the device wafer is protected, and meanwhile, the ultraviolet laser reflected to the laser release layer further acts on the laser release material, so that the bonding is more fully released;
according to the invention, through the action of the ultraviolet light-absorbing material or the light-absorbing material and the light-reflecting material in the system, ultraviolet laser is prevented from penetrating through the temporary bonding adhesive layer, so that the surface of the device wafer is protected, and the surface of the device wafer can be effectively prevented from being damaged by the ultraviolet laser through the temporary bonding material.
Drawings
Fig. 1 is a cross-sectional view of a slide wafer/device wafer temporary bond pair based on uv-laser photolytic bonding;
FIG. 2 is a graph showing the transmittances of temporary bonding materials obtained in examples and comparative examples for light waves of different wavelengths;
FIG. 3 is a microscope photograph of a device wafer/slide wafer bonding pair after UV laser de-bonding using the bonding paste of comparative example 1;
fig. 4 is a microscope photograph of a device wafer/slide wafer bond pair after uv laser de-bonding using the bonding paste of example 1.
Detailed Description
The invention will now be described in detail by way of specific embodiments with reference to the accompanying figures 1-4. The scope of the invention is not limited to the specific embodiments.
Example 1:
10 parts by weight of ethylene-propylene copolymer, 15 parts by weight of ethylene-norbornene copolymer, 1 part by weight of pentaerythritol rosin ester, 0.5 part by weight of tetrakis [ beta- (3, 5-di-tert-butyl-4-hydroxyphenyl) propionic acid ] pentaerythritol ester (antioxidant 1010), 0.1 part by weight of bis (2, 6-di-tert-butyl-4-methylphenyl) pentaerythritol diphosphate, 0.1 part by weight of 2, 2-bis [ [3- (dodecylthio) -propionyloxy ] methyl ] -1, 3-propanediol ester (antioxidant 412S) of 3- (dodecylthio) propionic acid, 0.3 part by weight of polyether modified siloxane leveling agent, 0.2 part by weight of UV absorbent 2- (2-hydroxy-3, 5-di-tert-phenyl) -5-chlorobenzotriazole, 2 parts of carbon black; adding 75 parts by weight of limonene solvent into the mixture in batches, mechanically stirring the mixture at the rotating speed of 1500rpm for 4 hours, performing ball milling dispersion on the raw materials for 2 hours by using a ball mill after the raw materials are fully stirred uniformly, filtering the mixture by using a 5-micron filter element, standing, degassing, sealing and storing.
Example 2:
10 parts by weight of ethylene-propylene-norbornene copolymer, 15 parts by weight of ethylene-norbornene copolymer, 1.5 parts by weight of pentaerythritol rosin ester, 0.25 part by weight of tetrakis [ beta- (3, 5-di-tert-butyl-4-hydroxyphenyl) propionic acid ] pentaerythritol ester (antioxidant 1010), 0.05 part by weight of bis (2, 6-di-tert-butyl-4-methylphenyl) pentaerythritol diphosphate, 0.05 part by weight of 3- (dodecylthio) propionic acid-2, 2-bis [ [3- (dodecylthio) -propionyloxy ] methyl ] -1, 3-propanediol ester (antioxidant 412S), 0.1 part by weight of polyether modified siloxane leveling agent, 0.2 part by weight of UV absorber 2- (2-hydroxy-3, 5-di-tert-phenyl) -5-chlorobenzotriazole, adding 75 parts by weight of methylcyclohexane solvent into the raw materials in batches, mechanically stirring the raw materials at the rotating speed of 1500rpm for 4 hours, performing ball milling dispersion on the raw materials for 2 hours by using a ball mill after the raw materials are fully stirred uniformly, filtering the mixture by using a 5-micron filter element, standing, degassing, and sealing and storing the mixture.
Example 3:
10 parts by weight of ethylene-propylene copolymer, 15 parts by weight of ethylene-propylene-norbornene copolymer, 1 part by weight of pentaerythritol rosin ester, 0.5 part by weight of tetrakis [ beta- (3, 5-di-tert-butyl-4-hydroxyphenyl) propionic acid ] pentaerythritol ester (antioxidant 1010), 0.1 part by weight of bis (2, 6-di-tert-butyl-4-methylphenyl) pentaerythritol diphosphate, 0.1 part by weight of 3- (dodecylthio) propionic acid-2, 2-bis [ [3- (dodecylthio) -propionyloxy ] methyl ] -1, 3-propanediol ester (antioxidant 412S), 0.3 part by weight of polyether modified siloxane leveling agent, 0.2 part by weight of UV absorbent 2- (2-hydroxy-3, 5-di-tert-phenyl) -5-chlorobenzotriazole, adding 2 parts of silicon dioxide into 75 parts by weight of p-isopropyltoluene solvent in batches, mechanically stirring at the rotating speed of 1500rpm for 4 hours, fully and uniformly stirring the raw materials, performing ball milling dispersion for 2 hours by using a ball mill, filtering by using a 5-micrometer filter element, standing, degassing, and sealing for storage.
Comparative example 1:
10 parts by weight of ethylene-propylene copolymer, 15 parts by weight of ethylene-norbornene copolymer, 1 part by weight of pentaerythritol rosin ester, 0.5 part by weight of tetra [ beta- (3, 5-di-tert-butyl-4-hydroxyphenyl) propionic acid ] pentaerythritol ester (antioxidant 1010), 0.1 part by weight of bis (2, 6-di-tert-butyl-4-methylphenyl) pentaerythritol diphosphate, 0.1 part by weight of 3- (dodecylthio) propionic acid-2, 2-bis [ [3- (dodecylthio) -propionyloxy ] methyl ] -1, 3-propanediol ester (antioxidant 412S), 0.3 part by weight of polyether modified siloxane leveling agent, adding 75 parts by weight of limonene solvent in batches, mechanically stirring at the rotating speed of 1500rpm for 4h, and after the raw materials are fully and uniformly stirred, filtering with 5um filter element, standing, degassing, and sealing for storage.
And (4) analyzing results:
the raw materials of the temporary bonding adhesive materials of the above examples and comparative examples are shown in the following table 1:
TABLE 1
Figure BDA0002629169580000071
FIG. 2 shows the transmittance of the temporary bonding materials obtained in the examples and comparative examples to light waves with different wavelengths, and the temporary bonding materials of examples 1-3 are added with ultraviolet light absorbing materials or light reflecting materials, and it can be seen from FIG. 2 that the transmittance of the materials to light waves in the characteristic ultraviolet region with the wavelength of 300-400nm is significantly reduced compared with that of comparative example 1. The light absorption material or the light reflection material is added to reduce the transmittance of the ultraviolet laser, so that the ultraviolet laser can be effectively prevented from damaging the surface of the device wafer through the temporary bonding material.
Fig. 1 is a cross-sectional view of a slide wafer/device wafer temporary bond pair based on uv-laser photolytic bonding; the temporary bonding pair is obtained by coating a laser release material on a wafer by a spin coating mode and baking and curing; the temporary bonding material is coated on the surface of the device wafer in a spin coating mode and is baked and cured, and the slide glass wafer coated with the Laser Release Layer (LRL) and the device wafer coated with the temporary bonding glue layer (TBL) are thermally and pressure bonded into a bonding pair through a wafer bonding machine under a vacuum condition. After the back process of the device wafer is finished, ultraviolet laser penetrates through the slide glass wafer to irradiate the laser release layer material to induce the laser release layer material to generate photochemical reaction, so that the laser release layer material is decomposed to lose viscosity, and finally, the high-efficiency, room-temperature and low-stress separation of the thin wafer is realized.
As can be seen from fig. 3, after the device wafer/slide wafer bonding pair using the bonding paste of comparative example 1 is subjected to ultraviolet laser de-bonding and the residual bonding paste is cleaned with a cleaning agent, the laser damage on the surface of the device wafer is observed with a microscope. As can be seen from fig. 4, after the device wafer/slide wafer bonding pair using the bonding paste of example 1 is subjected to ultraviolet laser de-bonding and the residual bonding paste is cleaned with a cleaning agent, the surface of the device wafer is observed by a microscope to be free from laser damage. The invention can effectively prevent the ultraviolet laser from damaging the surface of the device wafer through the temporary bonding material.
While preferred embodiments of the present invention have been described, additional variations and modifications in those embodiments may occur to those skilled in the art once they learn of the basic inventive concepts. Therefore, it is intended that the appended claims be interpreted as including preferred embodiments and all such alterations and modifications as fall within the scope of the invention.
It will be apparent to those skilled in the art that various changes and modifications may be made in the present invention without departing from the spirit and scope of the invention. Thus, if such modifications and variations of the present invention fall within the scope of the claims of the present invention and their equivalents, the present invention is also intended to include such modifications and variations.

Claims (10)

1. The temporary bonding adhesive material for protecting the wafer from ultraviolet laser damage is characterized by being prepared from the following raw materials in parts by weight: 25-45 parts of polymer matrix resin, 0-5 parts of tackifying resin, 0.2-2 parts of high-temperature-resistant antioxidant, 0-0.3 part of flatting agent, 0.2-5 parts of light-absorbing material, 0-5 parts of reflecting material and 55-75 parts of solvent.
2. The temporary bonding glue material of claim 1, wherein the light absorbing material comprises one or both of UV absorbers and carbon black, preferably wherein the UV absorbers comprise salicylate esters, benzophenones, benzotriazoles, substituted acrylonitriles, triazines ultraviolet absorbers, and wherein the carbon black has a particle size of 500nm or less.
3. The temporary bonding adhesive material of claim 1, wherein the light reflecting material comprises one or both of silica and glass frit, and the particle size of the light reflecting material is 500nm or less.
4. The temporary bonding glue material of claim 1, wherein the selected polymer matrix resin is one or more of an ethylene-propylene copolymer, an ethylene-propylene-norbornene copolymer, and an ethylene-norbornene copolymer.
5. The temporary bonding adhesive material of claim 1, wherein the selected solvent is one or more of dodecene, cyclohexane, methylcyclohexane, pinene, limonene, dipentene, mesitylene, p-methylisoprene, bicyclohexene, cyclododecene, 1-tert-butyl-3, 5-dimethylbenzene, butylcyclohexane, cyclooctane, cycloheptane, methyl ethyl ketone, cyclopentanone.
6. The temporary bonding gum material of claim 1, wherein the selected tackifying resin is an esterified rosin, preferably the esterified rosin comprises one or both of pentaerythritol rosin ester, rosin glycerol ester, rosin modified phenolic resin, rosin modified xylene formaldehyde resin.
7. The temporary bonding adhesive material of claim 1, wherein the selected antioxidant is a complex antioxidant consisting of a hindered phenol-based primary antioxidant, a phosphite-based secondary antioxidant, a thioether-based secondary antioxidant, the hindered phenol-based primary antioxidant: phosphite ester auxiliary antioxidant: the weight ratio of the thioether auxiliary antioxidant is 1: (0.1-1): (0.1-1); preferably, the selected hindered phenol main antioxidant is one or two of tetra [ beta- (3, 5-di-tert-butyl-4-hydroxyphenyl) propionic acid ] pentaerythritol ester or 3, 9-bis [2- [3- (3-tert-butyl-4-hydroxy-5-methylphenyl) -propionyloxy ] -1, 1-dimethylethyl ] -2,4,8, 10-tetraoxaspiro [5.5] undecane; preferably, the selected phosphite auxiliary antioxidant is one or two of bis (2, 6-di-tert-butyl-4-methylphenyl) pentaerythritol diphosphate or 2,2' -methylenebis (4, 6-di-tert-butylphenyl) isooctyloxy phosphite; preferably, the thioether auxiliary antioxidant is one or two of 3- (dodecylthio) propionic acid-2, 2-bis [ [3- (dodecylthio) -propionyloxy ] methyl ] -1, 3-propylene glycol ester or thiodipropionic acid didodecyl ester.
8. The temporary bonding glue material of claim 1, wherein the selected leveling agent is one of a polyester-modified siloxane-based leveling agent or a polyether-modified siloxane-based leveling agent or an aralkyl-modified siloxane-based leveling agent.
9. The method for preparing the temporary bonding adhesive material for protecting the wafer from the ultraviolet laser damage according to any one of claims 1 to 8, wherein 25 to 45 parts of polymer matrix resin, 0 to 5 parts of tackifying resin, 0.2 to 2 parts of high temperature resistant antioxidant, 0 to 0.3 part of leveling agent, 0.2 to 5 parts of light absorbing material and 0 to 5 parts of light reflecting material are added into 55 to 75 parts of solvent, and the solution is uniformly dispersed by using a mechanical stirring mode.
10. The preparation method as claimed in claim 9, wherein the rotation speed of mechanical stirring is 500-3000rpm, the stirring time is 0.5-8 h, the ball milling dispersion is performed for 0.5-5h by using a ball mill after the stirring is completed, and then the filtration is performed by using a filter element with the diameter of 5um or less.
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Application publication date: 20201110