CN111900099B - Temperature monitoring method of annealing equipment - Google Patents
Temperature monitoring method of annealing equipment Download PDFInfo
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- CN111900099B CN111900099B CN202010884274.7A CN202010884274A CN111900099B CN 111900099 B CN111900099 B CN 111900099B CN 202010884274 A CN202010884274 A CN 202010884274A CN 111900099 B CN111900099 B CN 111900099B
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
- H01L22/10—Measuring as part of the manufacturing process
- H01L22/12—Measuring as part of the manufacturing process for structural parameters, e.g. thickness, line width, refractive index, temperature, warp, bond strength, defects, optical inspection, electrical measurement of structural dimensions, metallurgic measurement of diffusions
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/324—Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
- H01L22/20—Sequence of activities consisting of a plurality of measurements, corrections, marking or sorting steps
- H01L22/26—Acting in response to an ongoing measurement without interruption of processing, e.g. endpoint detection, in-situ thickness measurement
Abstract
The invention provides a temperature monitoring method of annealing equipment, which comprises the following steps: providing a silicon wafer, and forming a light-tight film on the silicon wafer; and annealing the silicon wafer, measuring the temperature of the silicon wafer in real time in the annealing process, and performing closed-loop control on the annealing temperature by using the measured temperature. The invention solves the problems of poor temperature measurement precision and poor heating stability in the prior art.
Description
Technical Field
The invention relates to the technical field of semiconductors, in particular to a temperature monitoring method of annealing equipment.
Background
The quick annealing process is a semiconductor processing technology with wide application, and aims to make the silicon chip set in the required temperature and environment condition for a certain time, and utilize the heat energy to promote the atoms in the silicon chip to rearrange the lattice positions so as to reduce the lattice defects and activate the doped elements.
With the rapid rise of the performance of the device, the requirements on the process are higher and higher, and the rapid thermal annealing process is required to have higher heating precision and repeatability. The existing rapid thermal annealing process mainly adopts a lamp source to intensively heat a silicon wafer, and a temperature detector carries out closed-loop temperature control in a mode of carrying out thermal radiation temperature measurement on the bottom of the silicon wafer. The precondition for obtaining the real temperature of the silicon wafer by the method is that light emitted by the lamp source cannot penetrate through the silicon wafer, otherwise, a temperature detector can detect interference radiation from the lamp source, so that temperature measurement is inaccurate, temperature control judgment is influenced, repeatability and stability of final annealing effect are further influenced, and product quality is reduced.
Disclosure of Invention
The invention aims to provide a temperature monitoring method of annealing equipment, which aims to solve the problems of poor temperature measurement precision and poor heating stability in the prior art.
In order to achieve the above object, the present invention provides a temperature monitoring method of an annealing apparatus, comprising:
providing a silicon wafer, and forming a light-tight film on the silicon wafer;
and annealing the silicon wafer, measuring the temperature of the silicon wafer in real time in the annealing process, and performing closed-loop control on the annealing temperature by using the measured temperature.
Optionally, the opaque film is made of one or more of nickel, platinum, titanium, cobalt, tantalum, or tungsten.
Optionally, the opaque film has a thickness of
Optionally, before annealing the silicon wafer, a silicon dioxide layer is further formed on the opaque film.
Optionally, the thickness of the silicon dioxide layer is
Optionally, the annealing process of the silicon wafer includes: preheating, heating, main process annealing and cooling; the annealing equipment comprises a temperature control system, wherein the temperature control system controls the annealing temperature according to the temperature of the silicon wafer, the annealing temperature is increased in the preheating process and the temperature rising process, the annealing temperature is kept in the main process annealing process, and the annealing temperature is reduced in the temperature reducing process.
Optionally, the temperature control system includes a temperature detector, a controller and a heating lamp source, the temperature detector is used for measuring the temperature of the silicon wafer in real time, and the controller is used for controlling the heating lamp source to be turned on and off and adjusting the power of the heating lamp source according to the temperature obtained by the temperature detector.
Optionally, when the temperature of the silicon wafer is lower than a set temperature, the controller controls the heating lamp source to increase power; when the temperature of the silicon chip is equal to the set temperature, the controller controls the heating lamp source to keep power; and after the power of the heating lamp source is maintained for a set time, the controller controls the heating lamp source to reduce the power.
Optionally, the set time is 10 seconds to 60 seconds.
Optionally, the set temperature is 300 to 500 ℃.
The temperature monitoring method of the annealing equipment provided by the invention is characterized in that a light-tight film is deposited on a silicon wafer to prepare a light-tight film silicon wafer, and the silicon wafer is annealed; the temperature of the silicon wafer is measured in real time in the annealing process, the controller obtains the measured temperature and controls the heating lamp source to change power so as to change the annealing temperature of the silicon wafer, and therefore closed-loop control of the temperature of the silicon wafer is achieved; by adopting the light-tight film, the temperature measured by the temperature measurer is not interfered by the radiation of the heating lamp source, the temperature measured by the temperature measurer is more accurate, and the power for controlling the heating lamp source is more stable, so that the temperature measuring precision and the heating stability are improved in the closed-loop control of temperature monitoring.
Drawings
FIG. 1 is a flow chart of temperature monitoring according to an embodiment of the present invention;
FIG. 2a is a schematic view of an opaque film formed according to an embodiment of the present invention;
FIG. 2b is a schematic diagram illustrating the formation of a silicon dioxide layer according to one embodiment of the present invention;
FIG. 3 is a graph comparing temperature curves for an opaque thin film silicon wafer and a lightly doped silicon wafer during an annealing process according to one embodiment of the present invention;
wherein the reference numerals are: 11-a silicon wafer; 12-opaque film; 13-a silicon dioxide layer.
Detailed Description
The following describes in more detail embodiments of the present invention with reference to the schematic drawings. The advantages and features of the present invention will become more apparent from the following description. It is to be noted that the drawings are in a very simplified form and are not to precise scale, which is merely for the purpose of facilitating and distinctly claiming the embodiments of the present invention.
Fig. 1 is a flow chart of temperature monitoring provided in the present embodiment, fig. 2a is a schematic diagram of forming an opaque film provided in the present embodiment, and fig. 2b is a schematic diagram of forming a silicon dioxide layer provided in the present embodiment; FIG. 3 is a comparison graph of the temperature curves of the opaque thin film silicon wafer and the lightly doped silicon wafer during the annealing process provided in this example.
A temperature monitoring method of an annealing apparatus, for monitoring the temperature of a silicon wafer in real time, please refer to fig. 1, comprising:
step S1: providing a silicon wafer, and forming a light-tight film on the silicon wafer;
step S2: and annealing the silicon wafer, measuring the temperature of the silicon wafer in real time in the annealing process, and performing closed-loop control on the annealing temperature by using the measured temperature.
The temperature monitoring method of the annealing equipment of the present invention will be described in more detail below with reference to the accompanying drawings, in which preferred embodiments of the present invention are illustrated.
Referring to fig. 2a, in step S1, a silicon wafer 11 is provided, where the silicon wafer 11 may be a lightly doped silicon wafer, and the lightly doped silicon wafer is formed by implanting impurities into the silicon wafer through an ion implantation process.
Depositing an opaque film 12 on a silicon wafer 11, in particular depositing on a silicon wafer 11
The light-impermeable film 12 of (a) is,
representing the thickness unit "angstroms", the opaque film 12 has a thickness of
But is not limited to this thickness, and may be
Other thicknesses within the range. In this embodiment, the opaque film 12 is deposited by physical vapor deposition, but other deposition methods are also possible. The light transmittance of the opaque film 12 is close to zero, the light transmittance refers to the percentage of the light flux passing through the material and the incident light flux, and the material of the opaque film 12 is one or more of nickel, platinum, titanium, cobalt, tantalum, or tungsten. In this embodiment, the opaque film 12 is made of an alloy of nickel metal and platinum metal, the alloy of nickel metal and platinum metal contains platinum metal with a content of 9%, and the platinum metal with a certain content is beneficial to the stability of the opaque film 12 during annealing and the quality of the opaque film 12 after annealing, but the content of platinum metal is not limited to this content, and may be other suitable contents. In this embodiment, the opaque film is not limited to the alloy material of nickel metal and platinum metal, but may be made of other non-metallic opaque materials.
Referring to fig. 2b, a silicon dioxide layer 13 is formed on the opaque film 12 to complete the opaque film silicon wafer. In this implementationIn the example, the thickness of the silicon dioxide layer 13 is
But is not limited to this thickness, and may be
Other thicknesses within the range. The chemical reaction formula for the formation of the silicon dioxide layer 13 is: siH 4 +2N 2 O+N 2 ＝SiO 2 +3N 2 +2H 2 The reaction condition is plasma energy. In this embodiment, the silicon dioxide layer 13 is used to cover the opaque film 12, so as to prevent the metal in the opaque film 12 from diffusing, and further avoid affecting the stability of the opaque film 12 during annealing.
And S2, putting the prepared opaque film silicon wafer into annealing equipment, annealing the silicon wafer, measuring the temperature of the silicon wafer in real time in the annealing process, and performing closed-loop control on the annealing temperature by using the measured temperature. The annealing process of the silicon wafer comprises the following steps: the annealing equipment comprises a temperature control system, wherein the closed-loop control is that the temperature control system controls the annealing temperature according to the temperature of the silicon wafer so as to continuously raise the temperature on the silicon wafer in the preheating and heating processes, keep the temperature on the silicon wafer constant in the main process annealing process and continuously lower the temperature on the silicon wafer in the cooling process.
The temperature control system comprises a heating lamp source, a temperature detector and a controller, wherein the temperature detector measures the temperature of the silicon wafer in real time, and the controller is used for controlling the heating lamp source to be switched on and switched off and adjusting the power of the heating lamp source according to the temperature obtained by the temperature detector. When the temperature of the silicon wafer measured by the temperature measurer is lower than the set temperature, the controller controls the heating lamp source to increase power so as to increase the temperature of the silicon wafer; when the temperature of the silicon wafer measured by the temperature measurer is equal to the set temperature, the controller controls the heating lamp source to keep the power unchanged to carry out main process annealing; after the power of the heating lamp source is maintained for a set time, the controller controls the heating lamp source to reduce the power so as to reduce the temperature of the silicon wafer.
Nickel metal during the main process annealThe deposit reacts with silicon to generate nickel silicon compound Ni with higher temperature sensitivity 2 Si, the reaction formula is: 2Ni + Si = Ni 2 Si, the reaction condition is the high temperature of the main process annealing.
In order to know more clearly that the temperature monitoring of the opaque thin film silicon wafer is more accurate and the heating stability is higher than that of the lightly doped silicon wafer, the opaque thin film silicon wafer and the lightly doped silicon wafer are annealed in the same environment.
Referring to table 1, table 1 shows a comparison table of power variation of the opaque thin film silicon wafer and the lightly doped silicon wafer during the annealing process, and the heating power simulation is performed on the opaque thin film silicon wafer and the lightly doped silicon wafer to compare and verify the heating stability. In this embodiment, the annealing setting process includes a preheating process, a first temperature raising process, a second temperature raising process, a main process annealing process, a first temperature lowering process, and a second temperature lowering process. The switching rule of the annealing steps is that a temperature threshold is set for the preheating process, the first temperature rising process, the second temperature rising process, the main process annealing process, the first temperature reducing process and the second temperature reducing process, the annealing steps are switched according to the temperature threshold, when the temperature threshold is reached, the corresponding annealing process is switched, and the power of the heating lamp source is adjusted. In this embodiment, the thresholds of the preheating process, the first temperature raising process, the second temperature raising process, the main process annealing process, the first temperature lowering process, and the second temperature lowering process are set to 250 degrees celsius, 350 degrees celsius, 450 degrees celsius, 350 degrees celsius, and 250 degrees celsius, respectively, and are not limited to the set temperature thresholds, and may be other suitable temperature thresholds. In this embodiment, the set temperature is the main process annealing temperature, and the set temperature is 450 degrees celsius, or 300 degrees celsius to 500 degrees celsius, or the like. In practice, the measured temperature value has small floating change, so the temperature is set to be plus or minus 2 ℃ of 450 ℃, namely the annealing in the main process is carried out. In this embodiment, the total power of the heating lamp source is set to 4.5 kw, but the power is not limited to this power, and may be other reasonable power levels. In this embodiment, the main annealing time may be set to 30 seconds, or 10 to 60 seconds.
Table 1: power change comparison table of opaque thin film silicon wafer and shallow doped silicon wafer in annealing process
The switching rule of the annealing step is specifically that when the temperature of the silicon wafer is lower than 250 ℃, the lamp source is heated for preheating; when the temperature of the silicon wafer measured by the temperature measuring device is higher than 250 ℃, the silicon wafer enters a first temperature rising process, and the temperature of the silicon wafer rises to 350 ℃ in the first temperature rising process; when the temperature of the silicon wafer measured by the temperature measurer is higher than 350 ℃, the silicon wafer enters a second temperature rise process, and the temperature of the silicon wafer is raised to 450 ℃ in the second temperature rise process; when the temperature of the silicon wafer measured by the temperature measuring device is equal to 450 ℃, the silicon wafer enters the main process annealing process, and the temperature is set to be kept at 450 ℃ to carry out main process annealing on the silicon wafer; after the main process annealing within the set time is finished, the silicon wafer cooling process is carried out, when the temperature of the silicon wafer measured by the temperature measurer is higher than 350 ℃, the silicon wafer enters the first cooling process, and the temperature of the silicon wafer is reduced to 350 ℃ in the first cooling process; and when the temperature of the silicon wafer measured by the temperature measuring device is higher than 250 ℃, the silicon wafer enters a second cooling process, the temperature of the silicon wafer is reduced to 250 ℃ in the second cooling process, and then the heating lamp source keeps low power for preheating.
In different set annealing processes, the power change of the opaque film silicon wafer and the power change of the lightly doped silicon wafer are different under the same power of the heating lamp source. The lightly doped silicon wafer and the opaque thin film silicon wafer are compared and analyzed, and the power value of the heating lamp source in each annealing process set in the table 1 is the average power value of the process in order to clearly know the change of the heating power because the power of the heating lamp source is changed in real time in the annealing process. It can be seen from table 1 that the power of the heating lamp source during the preheating process of the lightly doped silicon wafer and the opaque thin film silicon wafer is five percent and four percent of the total power, respectively; after entering the first temperature rise process, the power of the heating lamp sources of the lightly doped silicon wafer and the light-tight film silicon wafer is respectively increased to eleven percent and thirteen percent of the total power; after entering the second temperature rise process, the power of the heating lamp sources of the lightly doped silicon wafer and the light-tight film silicon wafer is increased to fourteen percent of the total power; after the annealing process of the main process is carried out, the power of the heating lamp sources of the lightly doped silicon wafer and the light-tight film silicon wafer is respectively increased to sixteen percent and fifteen percent of the total power; after entering the first cooling process, the power of the heating lamp sources of the lightly doped silicon wafer and the opaque film silicon wafer is respectively increased to ten percent and thirteen percent of the total power; after entering the second cooling process, the power of the heating lamp sources of the lightly doped silicon wafer and the light-tight film silicon wafer is respectively increased to five percent and six percent of the total power.
It can be seen from the power change of the heating light source of the lightly doped silicon wafer and the opaque thin film silicon wafer that the power change of the heating light source when annealing the lightly doped silicon wafer is not stable as the power change of the opaque thin film silicon wafer when annealing the lightly doped silicon wafer, wherein the power from the first temperature rising process to the main process annealing process when annealing the lightly doped silicon wafer is gradually increased from eleven percent, fourteen percent to sixteen percent, and the power from the first temperature rising process to the main process annealing process when annealing the opaque thin film silicon wafer is gradually increased from thirteen percent, fourteen percent to fifteen percent, and it can be seen that the power increasing speed of the heating light source when annealing the opaque thin film silicon wafer is more stable. The power from the main process annealing process to the first annealing process is reduced from sixteen percent to ten percent when the lightly doped silicon wafer is annealed, and the power from the main process annealing process to the first annealing process is reduced from fifteen percent to thirteen percent when the opaque film silicon wafer is annealed.
Referring to fig. 3, temperature curve simulation is performed on the opaque thin film silicon wafer and the lightly doped silicon wafer, and comparison is performed to verify the temperature stability, so that the opaque thin film silicon wafer and the lightly doped silicon wafer have the same environment during the annealing process. Fig. 3 is a double ordinate, which sets a certain overlap factor, so that the distinction is more obvious, the abscissa is each annealing process, and the double ordinate is both temperature. It can be seen that the temperature profile of the annealing process for the opaque thin film wafer is more stable than the temperature profile of the annealing process for the lightly doped wafer. Because the light of the heating lamp source can penetrate through the shallow doped silicon wafer to interfere the detection result of the temperature detector, the detection result of the temperature detector can influence the power regulation of the heating lamp source, so that the temperature curve of the shallow doped silicon wafer is unstable, the light of the heating lamp source cannot penetrate through the opaque thin film silicon wafer easily, the radiation energy detected by the temperature detector is completely from the opaque thin film silicon wafer, the real temperature of the opaque thin film silicon wafer is reflected, the temperature rise curve of the opaque thin film silicon wafer is smooth, the temperature measurement accuracy of the temperature detector is high, the controller can accurately regulate the power of the heating lamp source, the heating accuracy of the power of the heating lamp source is improved, and the accuracy and the stability of temperature monitoring are improved.
And further measuring the resistance values of the annealed shallow doped silicon wafer and the annealed opaque thin film silicon wafer, specifically measuring the resistance values of the surfaces of the shallow doped silicon wafer and the opaque thin film silicon wafer respectively, and comparing and judging the repeatability and the temperature sensitivity. In this embodiment, a four-probe resistance measurement method is adopted, in which the test conditions of the measurement device are adjusted, 4 metal probes of the measurement device are arranged in a straight line and pressed against an object to be measured at a certain pressure, and the measurement device can output information of the object to be measured, such as the resistance value, the resistance rate, the conductivity, and the like.
Referring to fig. 1, when the opaque film silicon wafer is used to measure the resistance, 4 probes are pressed on the side of the opaque film; when the shallow doped silicon wafer is used for measuring the resistance value, 4 probes are pressed on the surface of the silicon wafer, and the corresponding resistance value can be obtained through a measuring device.
After the resistance values of the lightly doped silicon wafer and the opaque film silicon wafer are measured, the corresponding temperature is obtained by referring to the relation between the resistance value and the temperature. The change of the resistance value at the unit temperature can be obtained through the unit temperature change, and the larger the change of the resistance value at the unit temperature is, the higher the temperature sensitivity is. For example, two silicon wafers are provided, assuming that the resistance value is reduced by 1 ohm when the first silicon wafer is heated by 1 ℃, the resistance value is reduced by 3 ohms when the second silicon wafer is heated by 1 ℃, assuming that the temperature and the resistance value are in a linear inverse proportion relation, when the resistance value is reduced by 0.6 ohm when the first silicon wafer and the second silicon wafer are both measured, the temperature of the first silicon wafer is raised by 0.6 ℃, and the temperature of the second silicon wafer is raised by 0.2 ℃; when the measured resistance value is reduced by 0.1 ohm, the temperature of the first silicon wafer is increased by 0.1 ℃ and the temperature of the second silicon wafer is increased by about 0.03 ℃, it can be seen that when the resistance value changes the same, the temperature change precision of the second silicon wafer is high and is equal to the temperature sensitivity, so the temperature sensitivity of the second silicon wafer is higher than that of the first silicon wafer. It follows that the greater the change in resistance value per unit temperature, the higher the temperature sensitivity.
And (3) taking the annealed shallow doped silicon wafer and the light-tight thin film silicon wafer, measuring the reference temperature through multiple times of resistance value measurement, and under the unit temperature, testing to obtain that the resistance change value of the shallow doped silicon wafer is about 1.5 ohm/centigrade, the resistance change value of the light-tight thin film silicon wafer is about 3.9 ohm/centigrade, the ohm/centigrade is the value of the resistance change of the temperature change of 1 centigrade, the resistance change value is an absolute value, and the resistance change value of the light-tight thin film silicon wafer is greater than that of the shallow doped silicon wafer, so that the temperature sensitivity of the light-tight thin film silicon wafer is higher than that of the shallow doped silicon wafer. The light-tight film silicon wafer has high temperature sensitivity, is beneficial to temperature monitoring in the annealing process and improves the temperature control accuracy.
In summary, according to the temperature monitoring method of the annealing equipment provided by the invention, the opaque film is deposited on the silicon wafer to prepare the opaque film silicon wafer, and the silicon wafer is annealed; the temperature of the silicon wafer is measured in real time in the annealing process, the controller obtains the measured temperature and controls the heating lamp source to change the power so as to change the annealing temperature of the silicon wafer, and therefore closed-loop control of the temperature of the silicon wafer is achieved; by adopting the light-tight film, the temperature measured by the temperature measurer is not interfered by radiation of the heating lamp source, the temperature measured by the temperature measurer is more accurate, and the power for controlling the heating lamp source is more stable, so that the temperature measurement precision and the heating stability are improved in the closed-loop control of temperature monitoring.
The above description is only a preferred embodiment of the present invention and is not intended to limit the present invention in any way. Any person skilled in the art can make any equivalent substitutions or modifications on the technical solutions and technical contents disclosed in the present invention without departing from the scope of the technical solutions of the present invention, and still fall within the protection scope of the present invention without departing from the technical solutions of the present invention.
Claims (7)
1. A method of monitoring temperature of an annealing apparatus, comprising:
providing a silicon wafer, forming a light-tight film on the silicon wafer, and forming a silicon dioxide layer on the light-tight film, wherein the light-tight film is made of nickel metal and platinum metal;
annealing the silicon wafer, reacting the opaque film with the silicon wafer to generate a nickel-silicon compound in the annealing process, measuring the temperature of the silicon wafer in real time in the annealing process, and performing closed-loop control on the annealing temperature by using the measured temperature, wherein the annealing process of the silicon wafer comprises the following steps: preheating, heating, main process annealing and cooling; the annealing equipment comprises a temperature control system, wherein the temperature control system controls the annealing temperature according to the temperature of the silicon wafer, the annealing temperature is increased in the preheating process and the temperature rising process, the annealing temperature is kept in the main process annealing process, and the annealing temperature is reduced in the temperature reducing process.
2. The temperature monitoring method of an annealing apparatus according to claim 1, wherein the opaque film has a thickness of
3. The temperature monitoring method of an annealing apparatus according to claim 1, wherein said silicon dioxide layer has a thickness of
4. The temperature monitoring method of an annealing apparatus according to claim 1, wherein the temperature control system comprises a temperature detector for measuring the temperature of the silicon wafer in real time, a controller for controlling the on/off of the heating lamp source and adjusting the power of the heating lamp source according to the temperature obtained by the temperature detector, and a heating lamp source.
5. The temperature monitoring method of an annealing apparatus according to claim 4, wherein when the temperature of the silicon wafer is less than a set temperature, the controller controls the heating lamp source to increase power; when the temperature of the silicon chip is equal to the set temperature, the controller controls the heating lamp source to keep power; and after the power of the heating lamp source is maintained for a set time, the controller controls the heating lamp source to reduce the power.
6. The temperature monitoring method of an annealing apparatus according to claim 5, wherein the set time is 10 seconds to 60 seconds.
7. The temperature monitoring method of the annealing apparatus according to claim 5 or 6, wherein the set temperature is 300 to 500 degrees centigrade.
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