CN111900093A - 一种bcb薄膜太赫兹电路及其制作方法 - Google Patents

一种bcb薄膜太赫兹电路及其制作方法 Download PDF

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CN111900093A
CN111900093A CN202010671626.0A CN202010671626A CN111900093A CN 111900093 A CN111900093 A CN 111900093A CN 202010671626 A CN202010671626 A CN 202010671626A CN 111900093 A CN111900093 A CN 111900093A
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牛斌
范道雨
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Nanjing Zhongdian Xingu High Frequency Device Industry Technology Research Institute Co ltd
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Abstract

本发明公开了一种BCB薄膜太赫兹电路及其制作方法，方法包括：1)在半导体衬底上外延生长带有腐蚀停止层的太赫兹二极管或三极管外延材料，2)完成二极管、三极管等有源器件及电阻、电容等无源器件工艺制作，3)旋涂总厚度覆盖所有片上器件的BCB并固化，4)在所有器件电极接触上方处制作BCB通孔，5)在BCB上方制作电路金属布线，连接BCB通孔中的器件电极，6)完全去除半导体衬底及腐蚀停止层，完成BCB薄膜太赫兹电路制作。通过本方法可制作微米级厚度的BCB薄膜电路金属布线基板，且BCB材料具有极低的介电常数及太赫兹损耗，可提高太赫兹电路性能。

Description

一种BCB薄膜太赫兹电路及其制作方法
技术领域
本发明属于半导体集成电路领域，具体涉及一种BCB薄膜太赫兹电路及其制作方法。
背景技术
太赫兹(THz)科学技术是近二十年来迅速发展的一个新兴交叉学科和研究热点，涉及电磁学、光电子学、光学、半导体物理学、材料科学、生物、医学等多门科学。太赫兹频段覆盖电磁频谱的0.3THz～3THz频率范围，是一个蕴含着丰富物理内涵的宽频段电磁辐射区域。在近乎所有的太赫兹技术应用系统中，基于半导体工艺的太赫兹二极管如GaAs SBD、GaN SBD等，三极管如GaAs HEMT、InP HEMT、InP HBT等及其集成电路，是构成太赫兹发射极、接收、处理的核心技术。
目前太赫兹集成电路整体结构仍与传统半导体集成电路近似，在半导体衬底上制作器件与布线，完成正面工艺后将衬底减薄至几十微米至百微米厚度进行解理完成芯片制作，即使最新的薄膜太赫兹集成电路工艺，仍有几微米厚的半导体材料作为电路基板。然而在太赫兹频段下，半导体材料如GaAs、InP、GaN等，一般具有较大的微波损耗角正切，以及较高的介电常数。一方面直接带来了片上太赫兹波导的传输损耗，另一方面高介电常数电路半导体基板存在干扰波导模式设计，引起寄生电容等问题，限制高频段(工作频率≥0.5THz)太赫兹电路性能。
苯并环丁烯(BCB)介质具有极低介电常数(约2.65)，介质损耗角正切约为0.0008，而一般的GaAs衬底介电常数约为12.9，介质损耗角正切约为0.006。并且BCB材料厚度可通过旋涂、固化的方式达到微米级。另一方面，由于高频段太赫兹电路尺寸一般相比中低频段太赫兹电路尺寸较小，小尺寸电路对电路基板机械强度要求降低，掩盖了BCB作为太赫兹电路基板的弱点。可见BCB比传统半导体材料更适合作为太赫兹电路基板，尤其是工作在高太赫兹频段太赫兹电路基板。
发明内容
本发明的目的在于提供一种BCB薄膜太赫兹电路及其制作方法，降低芯片上太赫兹波传输损耗，降低寄生电容，减小电路基板介电常数对太赫兹模式的干扰。
实现本发明目的的技术解决方案为：一种BCB薄膜太赫兹电路制作方法，包括以下步骤：
1)在半导体衬底上外延生长带有腐蚀停止层的太赫兹二极管或三极管外延材料；
2)完成有源器件及无源器件工艺制作；
3)旋涂总厚度覆盖所有片上器件的BCB并固化；
4)在所有器件电极接触上方处制作BCB通孔；
5)在BCB上方制作电路金属布线，连接BCB通孔中的器件电极；
6)完全去除半导体衬底以及腐蚀停止层，完成BCB薄膜太赫兹电路制作。
本发明还提供一种BCB薄膜太赫兹电路，包括有源器件、无源器件、覆盖有源器件及无源器件的BCB；
所述有源器件、无源器件电极上方设有BCB通孔，BCB上方设有电路金属布线，连接BCB通孔中的器件电极。
与现有技术相比，本发明的显著优点为：通过制作BCB薄膜将有源、无源器件包裹，将电路金属布线制作在BCB薄膜上，并完全去除半导体衬底，降低芯片上太赫兹波传输损耗，降低寄生电容，减小电路基板介电常数对太赫兹模式的干扰，该方法可有效提高太赫兹电路，尤其是高太赫兹频段电路性能。
附图说明
图1是在半导体衬底上外延生长腐蚀停止层及器件功能层后的剖面图。
图2是制作完二极管、三极管等有源器件及电阻、电容等无源器件工艺的剖面图。
图3是旋涂总厚度覆盖所有片上器件的BCB并固化后的剖面图。
图4是完成在所有器件电极接触上方处制作BCB通孔后的剖面图。
图5是完成在BCB上方制作电路金属布线及器件互联的剖面图。
图6是完全去除半导体衬底及腐蚀停止层，完成BCB薄膜太赫兹电路制作后的剖面图。
具体实施方式
如图1～图5所示，一种BCB薄膜太赫兹电路制作方法，包括以下步骤：
1)在半导体衬底上外延生长带有腐蚀停止层的太赫兹二极管或三极管外延材料；
2)完成二极管、三极管等有源器件及电阻、电容等无源器件制作工艺；
3)旋涂总厚度覆盖所有片上器件的BCB并固化；
4)所有器件电极接触上方处制作BCB通孔；
5)在BCB上方制作电路金属布线，连接BCB通孔中的器件电极；
6)完全去除半导体衬底及腐蚀停止层，完成BCB薄膜太赫兹电路制作。
进一步的，步骤4)通过光刻、干法刻蚀，在所有有源、无源器件电极上方制作出BCB通孔，露出器件电极。
进一步的，步骤5)通过光刻、蒸发剥离，或者电镀的方式，在BCB上及BCB通孔中制作电路金属布线，连接BCB通孔中的器件电极。
进一步的，步骤6)通过机械研磨、抛光、化学腐蚀的方法将半导体衬底及腐蚀停止层全部去除。
本发明还提供一种BCB薄膜太赫兹电路，如图6所示，包括有源器件、无源器件、覆盖有源器件及无源器件的BCB；所述有源器件、无源器件电极上方设有BCB通孔，BCB上方设有电路金属布线，连接BCB通孔中的器件电极。
所述有源器件包括二极管、三极管，所述无源器件包括电阻、电容。
通过该方法制作的太赫兹电路没有半导体衬底，微米级BCB薄膜替代原半导体衬底成为集成电路结构的支撑，实现芯片上太赫兹波传输损耗的降低，降低寄生电容，减小电路基板介电常数对太赫兹模式的干扰。
下面以GaAs SBD太赫兹集成电路为实例，结合附图，进一步说明本发明的技术方案。
实施例
一种BCB薄膜太赫兹电路制作方法，具体方法如下：
1)在半绝缘GaAs衬底上，进行材料外延，包括腐蚀停止层、GaAs功能层，本实施例中腐蚀停止层为InGaP，GaAs功能层为n+GaAs及n-GaAs。剖面图如图1所示。
2)在器件功能层上进行GaAs SBD器件工艺制作，并在腐蚀停止层上进行电容、电阻等无源器件工艺制作，剖面图如图2所示。
3)在晶圆正面旋涂BCB，厚度足够覆盖GaAs有源器件及电容、电阻等无源器件，并进行BCB固化，剖面图如图3所示。
4)通过光刻、干法刻蚀，在所有有源、无源器件电极上方制作出BCB通孔，露出器件电极，剖面图如图4所示。
5)通过光刻、蒸发剥离，或者电镀的方式，在BCB上及BCB通孔中制作电路金属布线，连接BCB通孔中的器件电极，剖面图如图5所示。
6)通过机械研磨、抛光、化学腐蚀的方法将半绝缘GaAs衬底及腐蚀停止层全部去除，剩下以BCB薄膜太赫兹电路，剖面图如图6所示。

Claims (9)

1.一种BCB薄膜太赫兹电路制作方法，其特征在于，包括以下步骤：
1)在半导体衬底上外延生长带有腐蚀停止层的太赫兹二极管或三极管外延材料；
2)完成有源器件及无源器件工艺制作；
3)旋涂总厚度覆盖所有片上器件的BCB并固化；
4)在所有器件电极接触上方处制作BCB通孔；
5)在BCB上方制作电路金属布线，连接BCB通孔中的器件电极；
6)完全去除半导体衬底以及腐蚀停止层，完成BCB薄膜太赫兹电路制作。
2.根据权利要求1所述的BCB薄膜太赫兹电路制作方法，其特征在于，所述有源器件包括二极管、三极管。
3.根据权利要求1所述的BCB薄膜太赫兹电路制作方法，其特征在于，所述无源器件包括电阻、电容。
4.根据权利要求1所述的BCB薄膜太赫兹电路制作方法，其特征在于，步骤4)通过光刻、干法刻蚀，在所有有源、无源器件电极上方制作出BCB通孔，露出器件电极。
5.根据权利要求1所述的BCB薄膜太赫兹电路制作方法，其特征在于，步骤5)通过光刻、蒸发剥离，或者电镀的方式，在BCB上及BCB通孔中制作电路金属布线，连接BCB通孔中的器件电极。
6.根据权利要求1所述的BCB薄膜太赫兹电路制作方法，其特征在于，步骤6)通过机械研磨、抛光、化学腐蚀的方法将半导体衬底及腐蚀停止层全部去除。
7.一种BCB薄膜太赫兹电路，其特征在于，包括有源器件、无源器件，以及覆盖有源器件和无源器件的BCB；
所述有源器件、无源器件电极上方设有BCB通孔，BCB上方设有电路金属布线，连接BCB通孔中的器件电极。
8.根据权利要求7所述的BCB薄膜太赫兹电路，其特征在于，所述有源器件包括二极管、三极管。
9.根据权利要求7所述的BCB薄膜太赫兹电路，其特征在于，所述无源器件包括电阻、电容。
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CN103811364A (zh) * 2013-12-26 2014-05-21 中国电子科技集团公司第五十五研究所 一种实现基于bcb的磷化铟微波电路多层互联方法
CN111009466A (zh) * 2019-11-14 2020-04-14 中国电子科技集团公司第五十五研究所 一种材料结构倒置型异质衬底肖特基二极管电路制作方法

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