CN111893437A - Device and method for preparing gradient band gap perovskite film through post-treatment - Google Patents
Device and method for preparing gradient band gap perovskite film through post-treatment Download PDFInfo
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- 238000000034 method Methods 0.000 title claims abstract description 27
- 239000010408 film Substances 0.000 claims abstract description 59
- 238000010438 heat treatment Methods 0.000 claims abstract description 46
- 239000000758 substrate Substances 0.000 claims abstract description 38
- -1 amine halide salt Chemical class 0.000 claims abstract description 31
- 239000010409 thin film Substances 0.000 claims abstract description 26
- 239000000843 powder Substances 0.000 claims abstract description 16
- 229910052736 halogen Inorganic materials 0.000 claims abstract description 10
- 238000001816 cooling Methods 0.000 claims abstract description 7
- 150000002367 halogens Chemical class 0.000 claims abstract description 4
- GIAPQOZCVIEHNY-UHFFFAOYSA-N propylazanium;iodide Chemical compound [I-].CCC[NH3+] GIAPQOZCVIEHNY-UHFFFAOYSA-N 0.000 claims description 7
- LLWRXQXPJMPHLR-UHFFFAOYSA-N methylazanium;iodide Chemical compound [I-].[NH3+]C LLWRXQXPJMPHLR-UHFFFAOYSA-N 0.000 claims description 5
- KFQARYBEAKAXIC-UHFFFAOYSA-N aniline;hydroiodide Chemical compound [I-].[NH3+]C1=CC=CC=C1 KFQARYBEAKAXIC-UHFFFAOYSA-N 0.000 claims description 3
- CALQKRVFTWDYDG-UHFFFAOYSA-N butan-1-amine;hydroiodide Chemical compound [I-].CCCC[NH3+] CALQKRVFTWDYDG-UHFFFAOYSA-N 0.000 claims description 3
- XFYICZOIWSBQSK-UHFFFAOYSA-N ethylazanium;iodide Chemical compound [I-].CC[NH3+] XFYICZOIWSBQSK-UHFFFAOYSA-N 0.000 claims description 3
- PPCHYMCMRUGLHR-UHFFFAOYSA-N phenylmethanamine;hydroiodide Chemical compound I.NCC1=CC=CC=C1 PPCHYMCMRUGLHR-UHFFFAOYSA-N 0.000 claims description 3
- 238000004519 manufacturing process Methods 0.000 claims 1
- 238000012805 post-processing Methods 0.000 claims 1
- 238000002360 preparation method Methods 0.000 abstract description 17
- 239000000463 material Substances 0.000 abstract description 14
- 239000013078 crystal Substances 0.000 abstract description 7
- 238000009826 distribution Methods 0.000 abstract description 2
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- 238000004528 spin coating Methods 0.000 description 4
- 230000007704 transition Effects 0.000 description 4
- 238000000576 coating method Methods 0.000 description 3
- 150000002500 ions Chemical group 0.000 description 3
- 239000002994 raw material Substances 0.000 description 3
- 230000005540 biological transmission Effects 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000005265 energy consumption Methods 0.000 description 2
- 125000005843 halogen group Chemical group 0.000 description 2
- 230000006872 improvement Effects 0.000 description 2
- 238000003475 lamination Methods 0.000 description 2
- 238000011031 large-scale manufacturing process Methods 0.000 description 2
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- 238000005240 physical vapour deposition Methods 0.000 description 2
- 238000001228 spectrum Methods 0.000 description 2
- 238000006467 substitution reaction Methods 0.000 description 2
- 238000007738 vacuum evaporation Methods 0.000 description 2
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
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- 239000003337 fertilizer Substances 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 230000005525 hole transport Effects 0.000 description 1
- 229910052745 lead Inorganic materials 0.000 description 1
- 230000031700 light absorption Effects 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
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- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
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- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/24—Vacuum evaporation
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/0021—Reactive sputtering or evaporation
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/12—Organic material
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
- H10K71/40—Thermal treatment, e.g. annealing in the presence of a solvent vapour
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/549—Organic PV cells
Abstract
The invention belongs to the field of film preparation, and particularly belongs to a device and a method for preparing a gradient band gap perovskite film through aftertreatment. Comprises heating a substrate; an atmosphere protection cover is arranged at the upper end of the heating substrate, two cushion blocks which are equal in height and parallel to each other are connected to the upper end of the heating substrate in the atmosphere protection cover, and a substrate coated with a thin film is placed above the cushion blocks; the heating substrate below the base is provided with organic amine halide salt, and the organic amine halide salt is opposite to the side of the base with the film. The method comprises the following steps: firstly, placing a substrate on which an organic amine halide salt film grows on a cushion block; placing a certain amount of organic amine halide salt powder on a heating substrate; covering an atmosphere protection cover, adjusting the temperature of the heating table and preserving heatThen naturally cooling to room temperature; obtaining a gradient band gap CH3NH3Pb(Br,I)3A perovskite thin film. The invention can realize the preparation of the gradient band gap of the novel perovskite material single crystal and polycrystalline film, and realize the gradient distribution of halogen in the film so as to form the gradient band gap.
Description
Technical Field
The invention belongs to the field of film preparation, and particularly belongs to a device and a method for preparing a gradient band gap perovskite film through aftertreatment.
Background
In recent years, new perovskite materials have shown great application potential in the field of solar cells, and the progress of commercialization is being pursued. Based on the optimization of the structure and the material, although the organic-inorganic composite perovskite material single junction battery breaks through the photoelectric conversion efficiency of 25%, the organic-inorganic composite perovskite material single junction battery has a certain gap from silicon, and meanwhile, the stability and the atmospheric preparation of the organic-inorganic composite perovskite material single junction battery are still very challenging. The all-inorganic perovskite material battery has the advantages of higher stability and direct preparation in the air, is more convenient for industrialized preparation, but has lower efficiency. At present, the efficiency improvement of the unijunction perovskite solar cell through the structure and material optimization of the unijunction perovskite solar cell reaches a bottleneck stage, the efficiency can be further improved only by adopting a lamination method, but the preparation process of the lamination solar cell is complex, the preparation of more layer materials is required, the thickness and matching problem of each layer is also considered, and the unijunction perovskite solar cell is not beneficial to industrialized preparation.
The gradient band gap light absorption layer is another way to improve the efficiency of the solar cell, which is attached to the original growth process, does not need complicated structure design and matching, and is arranged at CIGS and the like are better applied to mature solar cells. The existing method for preparing the gradient band gap perovskite material solar cell mainly comprises continuous solution spin coating and continuous physical vapor deposition processes for adding a protective layer. In 2016, Alex Zettl team at Berkeley university, California, who prepared organic-inorganic composite perovskite gradient band gap solar cells on GaN by using solution continuous spin coating to prepare CH3NH3SnI3And CH3NH3PbI3-xBrxThe middle was separated with a monolayer of h-BN to prevent ion mixing, after which a hole transport layer and a current collection layer (Au) were spin coated. In 2019, the combined fertilizer industry university Material science and engineering college Jiang Yang professor topic group is combined with the Japanese Chongrope science and technology college Yabin Qi professor topic group, and the preparation of the all-inorganic CsPbBr by adopting the continuous physical vapor deposition process is proposed3And its derived phase CsPb2Br5，Cs4PbBr6The gradient band gap perovskite thin film.
The gradient band gap films are all gradient films made of materials with different structures, are not beneficial to component transition and charge transmission between layers, and need modification of a transition layer, so that the preparation process is difficult. The continuous vacuum evaporation process requires expensive equipment, high energy consumption and low preparation efficiency, and is not beneficial to the large-scale production of the perovskite solar cell.
Disclosure of Invention
Aiming at the problems in the prior art, the invention provides a device and a method for preparing a homogeneous (same-structure) gradient perovskite thin film through post-treatment. The invention may realize novel perovskite materials (including but not limited to ABX3，A2BX4Structures wherein A includes but is not limited to Cs+，MA+，FA+B includes but is not limited to Pb, Sn; x is a halogen atom. ) The gradient band gap preparation of monocrystal and polycrystal film is characterized by that it utilizes gas phase to introduce R-NH3-X1By the use of X1Substituting the original halogen ion X in the film2And the gradient distribution of halogen in the film is realized, so that a gradient band gap is formed.
The technical scheme adopted by the invention for solving the technical problems in the prior art is as follows:
the invention discloses a device for preparing a gradient band gap perovskite film through aftertreatment, which comprises a heating table, wherein a heating substrate is arranged on the heating table; the upper end of the heating substrate in the atmosphere protection cover is movably connected with two parallel cushion blocks with equal height, and a substrate coated with a thin film is placed above the cushion blocks; the heating substrate below the base is provided with organic amine halide salt, and the organic amine halide salt is opposite to the side of the base with the film.
In a further technical scheme, the invention discloses a method for preparing a gradient band gap perovskite thin film by post-treatment, which comprises the following steps:
s1, preparing a single halogen bottom layer perovskite film by adopting a common coating mode such as a spin coating method, a blade coating method and the like, and placing a substrate with the film on a cushion block with a certain thickness to enable the distance between the film and the upper end of a heating substrate to be 1-50 mm;
s2, placing a certain amount of organic amine halide salt powder on the clean heating substrate, wherein the powder is opposite to the center of the film;
s3, covering an atmosphere protection cover, adjusting the temperature of the heating table to 80-200 ℃, keeping the temperature for 1-24 hours, and then naturally cooling to room temperature; obtaining the gradient band gap perovskite film.
In a further technical scheme, each 1cm2The film is used in an amount of 0.01 to 1g of an organic amine halide salt.
In a further embodiment, the organic amine halide salt includes, but is not limited to, methylamine hydroiodide (CH)3NH3I) Ethylamine hydroiodide (C)2H5NH3I) Propylamine hydroiodide (i-C)3H7NH3I) Butylamine hydroiodide (i-C)4H9NH3I) Aniline hydroiodide (C)6H5NH3I) And phenylmethylamine hydroiodide (C)7H7NH3I) One kind of (1).
Has the advantages and positive effects that:
the traditional continuous vacuum evaporation process needs expensive equipment, higher energy consumption and low preparation efficiency, and is not beneficial to the large-scale production of the perovskite solar cell. The device is simple and cheap, consumes less energy, can be used for heating a flat plate and can also be heated by using a vacuum oven, and is cheap and easy to obtain, and easy to amplify and produce.
Compared with the existing preparation scheme of the gradient film, the technical scheme of the invention has the following obvious advantages:
the method realizes the preparation of the gradient band gap of the perovskite thin film with the same crystal structure, partial ion substitution is carried out by means of the original crystal structure, the crystal structure is not obviously changed, the ion diffusion is uniform, the band gap transition is uniform, the defects are few, the influence on charge transmission and recombination in the using process of the thin film is small, and the method has important significance on maintaining the photoelectric property of the thin film.
The gradient band gap of the non-homostructural material is made into a transition layer to avoid lattice mismatch at the joint, so that the process steps and difficulty are increased, and the gradient band gap of the homostructural material realized by the method can be avoided.
Drawings
FIG. 1 is a schematic view of the apparatus of the present invention;
FIG. 2 is a schematic diagram of the gradual substitution of halogen ions in the thin film structure by halogen ions in the organoamine halide salt of the present invention;
FIG. 3 shows CH before and after treatment in the present invention3NH3PbBr3A surface color contrast map;
FIG. 4 shows XRD test patterns and CH before and after thin film treatment in accordance with the present invention3NH3PbBr3And (5) comparing powder standard maps.
Wherein:
1. heating the substrate; 2. an atmosphere protection cover; 3. cushion blocks; 4. a substrate; 5. an organoamine halide salt.
Detailed Description
In order to further understand the contents, features and effects of the present invention, the following embodiments are illustrated and described in detail with reference to the accompanying drawings:
as shown in figure 1, the invention discloses a device for preparing a gradient band gap perovskite thin film by post-treatment, which comprises a heating table, wherein a heating substrate 1 is arranged on the heating table; a hollow atmosphere protection cover 2 with an opening at one end is arranged at the upper end of the heating substrate 1, two parallel cushion blocks 3 with equal height are movably connected at the upper end of the heating substrate 1 in the atmosphere protection cover 2, and a substrate 4 coated with a thin film is placed above the cushion blocks 3; the organic amine halide salt 5 is arranged on the heating substrate 1 below the base 4, and the organic amine halide salt 5 is opposite to the side of the base 4 with the film. According to the invention, the organic ammonium halide salt 5 is volatilized by reaching a melting point in the heating process of the heating substrate 1, the atmosphere of the organic ammonium halide salt 5 is generated in the atmosphere protection cover 2, halogen ions gradually enter the film and replace the original halogen ions in the film structure, the entering depth of the halogen ions can be controlled according to the heating time, so that a band gap gradient is generated, the organic part which does not enter is attached to the surface of the film, the water and oxygen stability of the film is enhanced, and the principle schematic diagram of ion replacement is shown in FIG. 2;
preferably, the heating table and the atmosphere protection cover 2 can be replaced by a vacuum drying oven.
The invention also discloses a method for preparing the gradient band gap perovskite film by post-treatment, which comprises the following steps:
s1, placing the substrate 4 with the organic amine halide salt 5 film on a cushion block 3 with the thickness of 1mm, and enabling the distance between the film and the upper end of the heating substrate 1 to be 1-50 mm;
s2, placing a certain amount of CH on the cleaned heating substrate 13NH3I, powder, wherein the powder is opposite to the center of the film;
s3, covering the atmosphere protection cover 2, adjusting the temperature of the heating table to 80-200 ℃, keeping the temperature for 1-24 hours, and then naturally cooling to room temperature; obtaining a gradient band gap CH3NH3Pb(Br,I)3A perovskite thin film.
Preferably, the amount of the organic amine halide salt 5 is selected according to the area of the film, specifically, per 1cm2The film is used for 0.01 to 1g of organic amine halide salt 5.
Preferably, the organic amine halide salt 5 includes, but is not limited to, methylamine hydroiodide (CH)3NH3I) Ethylamine hydroiodide (C)2H5NH3I) Propylamine hydroiodide (i-C)3H7NH3I) Butylamine hydroiodide (i-C)4H9NH3I) Aniline hydroiodide (C)6H5NH3I) And phenylmethylamine hydroiodide (C)7H7NH3I) One kind of (1).
The invention can adjust the distance between the film and the organic ammonium halide salt 5 by replacing the cushion blocks 3 with different thicknesses so as to control the volatilization distance.
Example 1
This example is the preparation of CH by post-treatment3NH3Pb(Br,I)3Perovskite thin film, thin film used is single crystal CH prepared by space limitation method3NH3PbBr3Film, the raw material is CH3NH3I; the method comprises the following steps:
s1, growth of CH3NH3PbBr3A base 4 of the film is placed on a cushion block 3 with the thickness of 1mm, so that the distance between the film and the upper end of the heating substrate 1 is 1 mm;
s2, placing 0.01g of CH on the clean heating substrate 13NH3I, powder, wherein the powder is opposite to the center of the film;
s3, covering the atmosphere protection cover 2, adjusting the temperature of the heating table to 80 ℃, keeping the temperature for 24 hours, and naturally cooling to room temperature; obtaining a gradient band gap CH3NH3Pb(Br,I)3A perovskite thin film.
Example 2
This example is a post-treatment for preparing a composition having a surface of i-C4H9NH3Protected CH3NH3Pb(Br,I)3A perovskite thin film; the used bottom film is single crystal CH prepared by a blade coating method3NH3PbBr3Film, the raw material is i-C4H9NH3I；
S1, growth of CH3NH3PbBr3The base 4 of the film is placed on a cushion block 3 with the thickness of 50mm, so that the distance between the film and the upper end of the heating substrate 1 is 50 mm;
s2, placing 1g of i-C on the cleaned heating substrate 14H9NH3I, powder, wherein the powder is opposite to the center of the film;
s3, covering the atmosphere protection cover 2, adjusting the temperature of the heating table to 180 ℃, keeping the temperature for 1h, and naturally cooling to room temperature; to obtain a surface having i-C4H9NH3Protected graded bandgap CH3NH3Pb(Br,I)3A perovskite thin film.
Example 3
This example is a post-treatment for preparing a composition having a surface C7H7NH3Protected i-C4H9NH3Pb(Br,I)3A perovskite thin film; the bottom layer film is single crystal CH prepared by a spin coating method3NH3PbBr3Film, raw material C7H7NH3I。
S1, growth of CH3NH3PbBr3The base 4 of the film is placed on a cushion block 3 with the thickness of 10mm, so that the distance between the film and the upper end of the heating substrate 1 is 10 mm;
s2, placing 0.3g of C on the cleaned heating substrate 17H7NH3I, powder, wherein the powder is opposite to the center of the film;
s3, covering the atmosphere protection cover 2, adjusting the temperature of the heating table to 200 ℃, keeping the temperature for 3 hours, and naturally cooling to room temperature; to obtain a surface having C7H7NH3Protected graded bandgap CH3NH3Pb(Br,I)3A perovskite thin film.
The experimental results are shown in fig. 3: the processed CH can be seen in the physical picture3NH3PbBr3The surface is completely changed into black, and the film has uniform color and no mottle. FIG. 4 shows XRD test pattern and CH before film treatment3NH3PbBr3The standard spectrum of the powder is matched, and after treatment, the spectrum peak of the low-angle (001) surface is already matched with CH3NH3PbI3The powder maps coincide, indicating that the surface layer has become CH3NH3PbI3The peak from the (002) plane is gradually split into two peaks, one (left peak) and CH3NH3PbI3Standard peak pair, one (right peak) and CH3NH3PbBr3The standard peak corresponds to the initial CH occurrence as the depth of incidence of the X-ray increases3NH3PbBr3The relative intensity difference between the left and right peaks gradually decreases, indicating CH3NH3PbBr3The increase indicates that the phase of the film is changed in a gradient manner, the band gap is determined by the halogen part, and the band gap is changed in a gradient manner.
The above description is only for the purpose of illustrating the preferred embodiments of the present invention and is not to be construed as limiting the invention, and any modifications, equivalents and improvements made within the spirit and principle of the present invention are intended to be included within the scope of the present invention.
Claims (4)
1. A device for preparing a gradient band gap perovskite thin film through aftertreatment is characterized in that: comprises a heating table, wherein a heating substrate is arranged on the heating table; the upper end of the heating substrate in the atmosphere protection cover is movably connected with two parallel cushion blocks with equal height, and a substrate coated with a thin film is placed above the cushion blocks; the heating substrate below the base is provided with organic amine halide salt, and the organic amine halide salt is opposite to the side of the base with the film.
2. The method of operating a post-treatment production gradient bandgap perovskite thin film device according to claim 1, comprising the steps of:
s1, firstly, preparing a single halogen bottom layer perovskite film, and placing a substrate with the film on a cushion block with a certain thickness to enable the distance between the film and the upper end of a heating substrate to be 1-50 mm;
s2, placing a certain amount of organic amine halide salt powder on the clean heating substrate, wherein the powder is opposite to the center of the film;
s3, covering an atmosphere protection cover, adjusting the temperature of the heating table to 80-200 ℃, keeping the temperature for 1-24 hours, and then naturally cooling to room temperature; obtaining the gradient band gap perovskite film.
3. The method of post-processing to produce a gradient bandgap perovskite thin film device of claim 2, wherein: every 1cm in S22The film is used in an amount of 0.01 to 1g of an organic amine halide salt.
4. The method of post-treating a device for making a gradient bandgap perovskite thin film of claim 2, wherein the organic amine halide salt comprises but is not limited to one of methylamine hydroiodide, ethylamine hydroiodide, propylamine hydroiodide, butylamine hydroiodide, aniline hydroiodide and benzylamine hydroiodide.
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| CN110047774A (en) * | 2018-01-17 | 2019-07-23 | 杭州纤纳光电科技有限公司 | A kind of immersion prepares the equipment and application method and application of perovskite thin film |
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|---|---|---|---|---|
| US20160049585A1 (en) * | 2014-08-13 | 2016-02-18 | National Tsing Hua University | Method of fabricating perovskite solar cell |
| CN106661729A (en) * | 2014-08-21 | 2017-05-10 | 学校法人冲绳科学技术大学院大学学园 | System and method based on low-pressure chemical vapor deposition for fabricating perovskite film |
| CN104716263A (en) * | 2015-03-18 | 2015-06-17 | 河南科技大学 | Method for preparing mixed halide compound perovskite CH3NH3PbI3-xClx gradient optical film |
| CN207320169U (en) * | 2017-10-16 | 2018-05-04 | 浙江昱辉阳光能源江苏有限公司 | A kind of perovskite battery of graded bandgap |
| CN110047774A (en) * | 2018-01-17 | 2019-07-23 | 杭州纤纳光电科技有限公司 | A kind of immersion prepares the equipment and application method and application of perovskite thin film |
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