CN111884593A - 一种基于hemt的环形开口太赫兹幅度调制器和制作方法 - Google Patents
一种基于hemt的环形开口太赫兹幅度调制器和制作方法 Download PDFInfo
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- CN111884593A CN111884593A CN202010772341.6A CN202010772341A CN111884593A CN 111884593 A CN111884593 A CN 111884593A CN 202010772341 A CN202010772341 A CN 202010772341A CN 111884593 A CN111884593 A CN 111884593A
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03C—MODULATION
- H03C1/00—Amplitude modulation
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/0102—Constructional details, not otherwise provided for in this subclass
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03C—MODULATION
- H03C1/00—Amplitude modulation
- H03C1/36—Amplitude modulation by means of semiconductor device having at least three electrodes
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04L—TRANSMISSION OF DIGITAL INFORMATION, e.g. TELEGRAPHIC COMMUNICATION
- H04L27/00—Modulated-carrier systems
- H04L27/02—Amplitude-modulated carrier systems, e.g. using on-off keying; Single sideband or vestigial sideband modulation
- H04L27/04—Modulator circuits; Transmitter circuits
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- Physics & Mathematics (AREA)
- Nonlinear Science (AREA)
- General Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Engineering & Computer Science (AREA)
- Computer Networks & Wireless Communication (AREA)
- Signal Processing (AREA)
- Junction Field-Effect Transistors (AREA)
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Cited By (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN112636002A (zh) * | 2020-12-18 | 2021-04-09 | 北京航空航天大学青岛研究院 | 一种基于tft工艺的可调谐超材料器件及其制作方法 |
CN113218910A (zh) * | 2021-05-13 | 2021-08-06 | 重庆邮电大学 | 一种基于超表面结构的太赫兹成像系统及方法 |
CN113253489A (zh) * | 2021-05-28 | 2021-08-13 | 重庆邮电大学 | 一种太赫兹多通道调制器及其制备方法 |
CN113406815A (zh) * | 2021-05-19 | 2021-09-17 | 华南理工大学 | 一种太赫兹有源超表面振幅型空间调制器 |
CN113917713A (zh) * | 2021-10-27 | 2022-01-11 | 重庆邮电大学 | 一种太赫兹双通道调制器及制备方法 |
CN114465010A (zh) * | 2022-01-05 | 2022-05-10 | 重庆邮电大学 | 一种基于电磁感应透明现象的电控超表面太赫兹调制器 |
CN117117506A (zh) * | 2023-08-07 | 2023-11-24 | 南京数捷电子科技有限公司 | 电控双频段与极化转换双功能智能超表面 |
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CN105610410A (zh) * | 2015-12-21 | 2016-05-25 | 电子科技大学 | 一种基于高电子迁移率晶体管的太赫兹多频带调制器 |
CN105676482A (zh) * | 2016-01-11 | 2016-06-15 | 电子科技大学 | 一种基于模式耦合的太赫兹调制器 |
US20170236912A1 (en) * | 2017-05-04 | 2017-08-17 | University Of Electronic Science And Technology Of China | Spatial terahertz wave phase modulator based on high electron mobility transistor |
CN107144985A (zh) * | 2017-06-21 | 2017-09-08 | 电子科技大学 | 一种网状错位分布的hemt阵列电控太赫兹波调制器 |
US20190025613A1 (en) * | 2017-07-21 | 2019-01-24 | Agency For Science, Technology And Research | Broadband tunable thz wave manipulator and the method to form the same |
WO2019077782A1 (en) * | 2017-10-17 | 2019-04-25 | Mitsubishi Electric Corporation | HIGH ELECTRONIC MOBILITY TRANSISTOR HAVING NEGATIVE CAPACITY GRID |
CN109814283A (zh) * | 2019-03-27 | 2019-05-28 | 电子科技大学 | 低电压驱动的常开型太赫兹超表面调制器及制备方法 |
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2020
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US20170236912A1 (en) * | 2017-05-04 | 2017-08-17 | University Of Electronic Science And Technology Of China | Spatial terahertz wave phase modulator based on high electron mobility transistor |
CN107144985A (zh) * | 2017-06-21 | 2017-09-08 | 电子科技大学 | 一种网状错位分布的hemt阵列电控太赫兹波调制器 |
US20190025613A1 (en) * | 2017-07-21 | 2019-01-24 | Agency For Science, Technology And Research | Broadband tunable thz wave manipulator and the method to form the same |
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CN109814283A (zh) * | 2019-03-27 | 2019-05-28 | 电子科技大学 | 低电压驱动的常开型太赫兹超表面调制器及制备方法 |
CN110426867A (zh) * | 2019-07-31 | 2019-11-08 | 电子科技大学 | 一种基于渐变开口的宽带太赫兹调制器 |
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Cited By (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN112636002A (zh) * | 2020-12-18 | 2021-04-09 | 北京航空航天大学青岛研究院 | 一种基于tft工艺的可调谐超材料器件及其制作方法 |
CN112636002B (zh) * | 2020-12-18 | 2022-02-01 | 北京航空航天大学青岛研究院 | 一种基于tft工艺的可调谐超材料器件及其制作方法 |
CN113218910A (zh) * | 2021-05-13 | 2021-08-06 | 重庆邮电大学 | 一种基于超表面结构的太赫兹成像系统及方法 |
CN113218910B (zh) * | 2021-05-13 | 2023-05-02 | 重庆邮电大学 | 一种基于超表面结构的太赫兹成像系统及方法 |
CN113406815A (zh) * | 2021-05-19 | 2021-09-17 | 华南理工大学 | 一种太赫兹有源超表面振幅型空间调制器 |
CN113253489A (zh) * | 2021-05-28 | 2021-08-13 | 重庆邮电大学 | 一种太赫兹多通道调制器及其制备方法 |
CN113253489B (zh) * | 2021-05-28 | 2024-07-23 | 重庆邮电大学 | 一种太赫兹多通道调制器及其制备方法 |
CN113917713A (zh) * | 2021-10-27 | 2022-01-11 | 重庆邮电大学 | 一种太赫兹双通道调制器及制备方法 |
CN114465010A (zh) * | 2022-01-05 | 2022-05-10 | 重庆邮电大学 | 一种基于电磁感应透明现象的电控超表面太赫兹调制器 |
CN117117506A (zh) * | 2023-08-07 | 2023-11-24 | 南京数捷电子科技有限公司 | 电控双频段与极化转换双功能智能超表面 |
CN117117506B (zh) * | 2023-08-07 | 2024-06-21 | 南京数捷电子科技有限公司 | 电控双频段与极化转换双功能智能超表面 |
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