CN111883550A - Flat panel detector - Google Patents
Flat panel detector Download PDFInfo
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- CN111883550A CN111883550A CN202010794753.XA CN202010794753A CN111883550A CN 111883550 A CN111883550 A CN 111883550A CN 202010794753 A CN202010794753 A CN 202010794753A CN 111883550 A CN111883550 A CN 111883550A
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- 229910052751 metal Inorganic materials 0.000 claims abstract description 33
- 239000002184 metal Substances 0.000 claims abstract description 33
- 239000002096 quantum dot Substances 0.000 claims abstract description 31
- 239000010409 thin film Substances 0.000 claims abstract description 27
- 238000006243 chemical reaction Methods 0.000 claims abstract description 23
- 239000002042 Silver nanowire Substances 0.000 claims abstract description 22
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims abstract description 21
- 239000000084 colloidal system Substances 0.000 claims abstract description 21
- 239000003292 glue Substances 0.000 claims description 9
- FVAUCKIRQBBSSJ-UHFFFAOYSA-M sodium iodide Chemical compound [Na+].[I-] FVAUCKIRQBBSSJ-UHFFFAOYSA-M 0.000 claims description 9
- 238000007789 sealing Methods 0.000 claims description 8
- 230000008020 evaporation Effects 0.000 claims description 6
- 238000001704 evaporation Methods 0.000 claims description 6
- UHYPYGJEEGLRJD-UHFFFAOYSA-N cadmium(2+);selenium(2-) Chemical compound [Se-2].[Cd+2] UHYPYGJEEGLRJD-UHFFFAOYSA-N 0.000 claims description 4
- XQPRBTXUXXVTKB-UHFFFAOYSA-M caesium iodide Chemical compound [I-].[Cs+] XQPRBTXUXXVTKB-UHFFFAOYSA-M 0.000 claims description 4
- MARUHZGHZWCEQU-UHFFFAOYSA-N 5-phenyl-2h-tetrazole Chemical compound C1=CC=CC=C1C1=NNN=N1 MARUHZGHZWCEQU-UHFFFAOYSA-N 0.000 claims description 3
- GPXJNWSHGFTCBW-UHFFFAOYSA-N Indium phosphide Chemical compound [In]#P GPXJNWSHGFTCBW-UHFFFAOYSA-N 0.000 claims description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 3
- 229910052793 cadmium Inorganic materials 0.000 claims description 3
- BDOSMKKIYDKNTQ-UHFFFAOYSA-N cadmium atom Chemical compound [Cd] BDOSMKKIYDKNTQ-UHFFFAOYSA-N 0.000 claims description 3
- 229910052710 silicon Inorganic materials 0.000 claims description 3
- 239000010703 silicon Substances 0.000 claims description 3
- 235000009518 sodium iodide Nutrition 0.000 claims description 3
- PBYZMCDFOULPGH-UHFFFAOYSA-N tungstate Chemical compound [O-][W]([O-])(=O)=O PBYZMCDFOULPGH-UHFFFAOYSA-N 0.000 claims description 3
- 238000003384 imaging method Methods 0.000 abstract description 6
- 239000000969 carrier Substances 0.000 abstract description 3
- 229910021417 amorphous silicon Inorganic materials 0.000 description 3
- 238000000034 method Methods 0.000 description 3
- BUGBHKTXTAQXES-UHFFFAOYSA-N Selenium Chemical compound [Se] BUGBHKTXTAQXES-UHFFFAOYSA-N 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 229910052711 selenium Inorganic materials 0.000 description 2
- 239000011669 selenium Substances 0.000 description 2
- 239000011358 absorbing material Substances 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
- 238000005457 optimization Methods 0.000 description 1
- 230000000750 progressive effect Effects 0.000 description 1
- 238000002601 radiography Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14665—Imagers using a photoconductor layer
- H01L27/14676—X-ray, gamma-ray or corpuscular radiation imagers
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y40/00—Manufacture or treatment of nanostructures
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/14609—Pixel-elements with integrated switching, control, storage or amplification elements
- H01L27/14612—Pixel-elements with integrated switching, control, storage or amplification elements involving a transistor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/14636—Interconnect structures
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- Power Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Electromagnetism (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Chemical & Material Sciences (AREA)
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Abstract
The invention relates to a flat panel detector, which comprises a thin film transistor group, a first metal electrode, a conversion layer and a second metal electrode, wherein the thin film transistor group, the first metal electrode, the conversion layer and the second metal electrode are sequentially arranged from bottom to top; the thin film transistor group comprises n thin film transistors, wherein n is a positive integer greater than or equal to 1; the source electrode of each thin film transistor is connected with the first metal electrode; the conversion layer is composed of silver nanowires, quantum dots and scintillator colloids. The silver nanowire has high conductivity, can quickly collect and transmit free carriers, reduces working voltage, reduces signal reading time and improves imaging quality.
Description
Technical Field
The invention relates to the technical field of digital images, in particular to a flat panel detector.
Background
Digital Radiography (DR) technology has been widely used in the fields of medical instruments and the like due to its advantages of fast imaging, convenient operation, high resolution and the like. Among them, the performance of the X-ray flat panel detector has a relatively large influence on the DR image quality.
At present, an amorphous selenium flat panel detector and an amorphous silicon flat panel detector are the most common commercial DR flat panel detectors, and the former belongs to a direct flat panel detector and the latter belongs to an indirect flat panel detector according to different energy conversion modes. The direct flat panel detector collects current generated by an upper conversion layer through a thin film transistor array at the bottom, reads X-ray dose of each point through a reading circuit, and then generates an image. Since the amorphous selenium does not generate visible light and has no influence of scattered rays, higher spatial resolution can be obtained. But because its operating voltage is high and therefore has the potential safety hazard, in addition have a series of problems such as image overlap and hysteresis. The indirect flat panel detector consists of a scintillator material at the upper part, an amorphous silicon photodiode at the middle part and a charge reading circuit at the bottom part, namely the amorphous silicon photodiode detects visible light converted by the scintillator material absorbing X rays, and the charge reading circuit reads charges and finally converts the charges into images. However, the visible light will scatter during the conversion process, which will have a certain effect on the spatial resolution.
In addition, inorganic absorbing materials are also placed in the organic matrix in the prior art, but the organic semiconductor has lower conductivity, thereby reducing the efficiency of the photodiode and affecting the imaging quality.
Disclosure of Invention
The invention aims to provide a flat panel detector, which is used for improving the conductivity of the flat panel detector and improving the imaging quality.
In order to achieve the purpose, the invention provides the following scheme:
a flat panel detector comprises a thin film transistor group, a first metal electrode, a conversion layer and a second metal electrode which are arranged from bottom to top in sequence;
the thin film transistor group comprises n thin film transistors, wherein n is a positive integer greater than or equal to 1;
the source electrode of each thin film transistor is connected with the first metal electrode;
the conversion layer is composed of silver nanowires, quantum dots and scintillator colloids.
Preferably, the conversion layer comprises a first layer, a second layer and a third layer which are arranged from bottom to top in sequence;
the first layer and the third layer are both composed of the silver nanowires, the quantum dots, and the scintillator colloid; the second layer is composed of the quantum dots and the scintillator colloid.
Preferably, the scintillator colloid is any one of cadmium tungstate, cesium iodide and thallium-doped sodium iodide.
Preferably, the quantum dot is any one of cadmium selenide, silicon, cadmium telluride, and indium phosphide.
Preferably, the thickness of the first layer, the second layer and the third layer ranges from 0.01 to 100 μm.
Preferably, the silver nanowires account for 0.01-0.3 of the total volume of the first layer, the quantum dots account for 0.01-0.3 of the total volume of the first layer, and the scintillator glue accounts for 0.4-0.98 of the total volume of the first layer;
the silver nanowires account for 0.01-0.3 of the total volume of the third layer, the quantum dots account for 0.01-0.3 of the total volume of the third layer, and the scintillator glue accounts for 0.4-0.98 of the total volume of the third layer.
Preferably, the quantum dots account for 0.01-0.3 of the total volume of the second layer, and the scintillator colloid accounts for 0.7-0.99 of the total volume of the second layer.
Preferably, the flat panel detector further includes:
and the light reflecting sealing layer is used for performing light reflecting sealing on the four side surfaces of the first metal electrode, the four side surfaces of the conversion layer and the four side surfaces of the second metal electrode.
Preferably, the first metal electrode is attached to the thin film transistor group by evaporation; the second metal electrode is attached to the conversion layer by evaporation.
According to the specific embodiment provided by the invention, the invention discloses the following technical effects:
the invention relates to a flat panel detector, which comprises a thin film transistor group, a first metal electrode, a conversion layer and a second metal electrode, wherein the thin film transistor group, the first metal electrode, the conversion layer and the second metal electrode are sequentially arranged from bottom to top; the thin film transistor group comprises n thin film transistors, wherein n is a positive integer greater than or equal to 1; the source electrode of each thin film transistor is connected with the first metal electrode; the conversion layer is composed of silver nanowires, quantum dots and scintillator colloids. The silver nanowire has high conductivity, can quickly collect and transmit free carriers, reduces working voltage, reduces signal reading time and improves imaging quality.
Drawings
In order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, the drawings needed to be used in the embodiments will be briefly described below, and it is obvious that the drawings in the following description are only some embodiments of the present invention, and it is obvious for those skilled in the art to obtain other drawings without inventive exercise.
FIG. 1 is a front cross-sectional view of a flat panel detector according to the present invention.
Description of the symbols: the method comprises the following steps of 1-a thin film transistor group, 2-a first metal electrode, 3-a second metal electrode, 4-a light reflecting sealing layer, 5-a first layer, 6-a second layer, 7-a third layer, 8-silver nanowires, 9-quantum dots and 10-scintillator colloid.
Detailed Description
The technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the drawings in the embodiments of the present invention, and it is obvious that the described embodiments are only a part of the embodiments of the present invention, and not all of the embodiments. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.
The invention aims to provide a flat panel detector, which is used for improving the conductivity of the flat panel detector and improving the imaging quality.
In order to make the aforementioned objects, features and advantages of the present invention comprehensible, embodiments accompanied with figures are described in further detail below.
Fig. 1 is a front cross-sectional view of a flat panel detector of the present invention, and as shown in fig. 1, the present invention provides a flat panel detector, which includes a thin film transistor group 1, a first metal electrode 2, a conversion layer and a second metal electrode 3, which are sequentially disposed from bottom to top.
The thin film transistor group 1 comprises n thin film transistors, n is a positive integer larger than or equal to 1, the specific number is selected according to actual requirements, and the specific distribution mode can be divided by a planar rectangular array.
The source electrode of each thin film transistor is connected with the first metal electrode 2.
The conversion layer consists of silver nanowires 8, quantum dots 9 and scintillator colloids 10.
Specifically, the scintillator colloid 10 is any one of cadmium tungstate, cesium iodide, and thallium-doped sodium iodide. In this example, cesium iodide was selected.
The quantum dots 9 are any one of cadmium selenide, silicon, cadmium telluride and indium phosphide. In this embodiment, cadmium selenide is selected.
As an alternative embodiment, the conversion layer of the present invention includes a first layer 5, a second layer 6, and a third layer 7, which are arranged in sequence from bottom to top. The first layer 5 and the third layer 7 are both composed of the silver nanowires 8, the quantum dots 9, and the scintillator colloid 10; the second layer 6 is composed of the quantum dots 9 and the scintillator colloid 10.
Specifically, the thickness of the first layer 5, the second layer 6 and the third layer 7 ranges from 0.01 μm to 100 μm. In this example, 0.05 μm was selected.
Further, assume that the volume of the first layer 5 is set to 1. In the first layer 5, the silver nanowires 8 account for 0.01-0.3 of the total volume of the first layer 5, the quantum dots 9 account for 0.01-0.3 of the total volume of the first layer 5, and the scintillator glue accounts for 0.4-0.98 of the total volume of the first layer 5; the silver nanowires 8, the quantum dots 9 and the scintillator colloid 10 are mixed and solidified according to the above proportion to prepare the first layer 5. In this embodiment, the silver nanowires 8 account for 0.1 of the total volume of the first layer 5, the quantum dots 9 account for 0.1 of the total volume of the first layer 5, and the scintillator glue accounts for 0.8 of the total volume of the first layer 5.
It is assumed that the volume of the third layer 7 is set to 1. In the third layer 7, the silver nanowires 8 account for 0.01-0.3 of the total volume of the third layer 7, the quantum dots 9 account for 0.01-0.3 of the total volume of the third layer 7, and the scintillator glue accounts for 0.4-0.98 of the total volume of the third layer 7; the silver nanowires 8, the quantum dots 9 and the scintillator colloid 10 are mixed and solidified according to the above proportion to prepare the third layer 7. In this embodiment, the silver nanowires 8 account for 0.1 of the total volume of the third layer 7, the quantum dots 9 account for 0.1 of the total volume of the third layer 7, and the scintillator glue accounts for 0.8 of the total volume of the third layer 7.
It is assumed that the volume of the second layer 6 is set to 1. In the second layer 6, the quantum dots 9 account for 0.01-0.3 of the total volume of the second layer 6, and the scintillator colloid 10 accounts for 0.7-0.99 of the total volume of the second layer 6. The quantum dots 9 and the scintillator colloid 10 are mixed and solidified according to the above proportion to prepare the second layer 6. In this embodiment, the quantum dots 9 account for 0.2 of the total volume of the second layer 6, and the scintillator glue accounts for 0.8 of the total volume of the second layer 6.
In order to solve the problem of scattering of visible light generated by the scintillator gel 10, the flat panel detector of the present invention further includes:
and the light reflecting sealing layer 4 is used for performing light reflecting sealing on four side surfaces of the first metal electrode 2, four side surfaces of the conversion layer and four side surfaces of the second metal electrode 3.
Preferably, the first metal electrode 2 is attached to the thin film transistor group 1 by evaporation; the second metal electrode 3 is attached to the third layer 7 by evaporation.
The invention has the following specific beneficial effects:
1) the silver nanowire has high conductivity, and free carriers can be rapidly collected and transmitted.
2) This application is through setting up the reflection of light sealing layer, can effectively reduce the scattering problem of the visible light that the scintillator colloid produced, can also play and keep apart the water and support increase of service life.
3) The method can be suitable for different types of scintillators only by adjusting the diameter of the quantum dots, and the steps of matching optimization are reduced.
The embodiments in the present description are described in a progressive manner, each embodiment focuses on differences from other embodiments, and the same and similar parts among the embodiments are referred to each other.
The principles and embodiments of the present invention have been described herein using specific examples, which are presented solely to aid in the understanding of the apparatus and its core concepts; meanwhile, for a person skilled in the art, according to the idea of the present invention, the specific embodiments and the application range may be changed. In view of the above, the present disclosure should not be construed as limiting the invention.
Claims (9)
1. A flat panel detector is characterized by comprising a thin film transistor group, a first metal electrode, a conversion layer and a second metal electrode which are sequentially arranged from bottom to top;
the thin film transistor group comprises n thin film transistors, wherein n is a positive integer greater than or equal to 1;
the source electrode of each thin film transistor is connected with the first metal electrode;
the conversion layer is composed of silver nanowires, quantum dots and scintillator colloids.
2. The flat panel detector according to claim 1, wherein the conversion layer comprises a first layer, a second layer and a third layer sequentially arranged from bottom to top;
the first layer and the third layer are both composed of the silver nanowires, the quantum dots, and the scintillator colloid; the second layer is composed of the quantum dots and the scintillator colloid.
3. The flat panel detector according to claim 1, wherein the scintillator colloid is any one of cadmium tungstate, cesium iodide and thallium-doped sodium iodide.
4. The flat panel detector of claim 1, wherein the quantum dots are any one of cadmium selenide, silicon, cadmium telluride, and indium phosphide.
5. The flat panel detector according to claim 2, wherein the thickness of the first layer, the second layer and the third layer is 0.01-100 μm.
6. The flat panel detector according to claim 2, wherein the silver nanowires account for 0.01 to 0.3 of the total volume of the first layer, the quantum dots account for 0.01 to 0.3 of the total volume of the first layer, and the scintillator glue accounts for 0.4 to 0.98 of the total volume of the first layer;
the silver nanowires account for 0.01-0.3 of the total volume of the third layer, the quantum dots account for 0.01-0.3 of the total volume of the third layer, and the scintillator glue accounts for 0.4-0.98 of the total volume of the third layer.
7. The flat panel detector according to claim 2, wherein the quantum dots occupy 0.01-0.3 of the total volume of the second layer, and the scintillator gel occupies 0.7-0.99 of the total volume of the second layer.
8. A flat panel detector according to claim 1, further comprising:
and the light reflecting sealing layer is used for performing light reflecting sealing on the four side surfaces of the first metal electrode, the four side surfaces of the conversion layer and the four side surfaces of the second metal electrode.
9. The flat panel detector according to claim 1, wherein the first metal electrode is attached to the thin film transistor group by evaporation; the second metal electrode is attached to the conversion layer by evaporation.
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| CN202010794753.XA CN111883550B (en) | 2020-08-10 | 2020-08-10 | Flat panel detector |
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| CN202010794753.XA CN111883550B (en) | 2020-08-10 | 2020-08-10 | Flat panel detector |
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