CN109638158A - A kind of flexible organic film transistor and preparation method thereof - Google Patents
A kind of flexible organic film transistor and preparation method thereof Download PDFInfo
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- CN109638158A CN109638158A CN201811436345.6A CN201811436345A CN109638158A CN 109638158 A CN109638158 A CN 109638158A CN 201811436345 A CN201811436345 A CN 201811436345A CN 109638158 A CN109638158 A CN 109638158A
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- 230000009975 flexible effect Effects 0.000 title claims abstract description 53
- 238000002360 preparation method Methods 0.000 title claims abstract description 30
- 239000000758 substrate Substances 0.000 claims abstract description 38
- 229920000139 polyethylene terephthalate Polymers 0.000 claims abstract description 31
- 239000005020 polyethylene terephthalate Substances 0.000 claims abstract description 31
- 239000004065 semiconductor Substances 0.000 claims abstract description 31
- YWIGIVGUASXDPK-UHFFFAOYSA-N 2,7-dioctyl-[1]benzothiolo[3,2-b][1]benzothiole Chemical group C12=CC=C(CCCCCCCC)C=C2SC2=C1SC1=CC(CCCCCCCC)=CC=C21 YWIGIVGUASXDPK-UHFFFAOYSA-N 0.000 claims abstract description 28
- 229920000144 PEDOT:PSS Polymers 0.000 claims abstract description 26
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims abstract description 26
- 238000000034 method Methods 0.000 claims abstract description 26
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- 239000003431 cross linking reagent Substances 0.000 claims abstract description 15
- FUGYGGDSWSUORM-UHFFFAOYSA-N 4-hydroxystyrene Chemical compound OC1=CC=C(C=C)C=C1 FUGYGGDSWSUORM-UHFFFAOYSA-N 0.000 claims abstract description 10
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical group [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims abstract description 9
- 229910052737 gold Inorganic materials 0.000 claims abstract description 9
- 239000010931 gold Substances 0.000 claims abstract description 9
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- 239000004332 silver Substances 0.000 claims abstract description 9
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- 229920003207 poly(ethylene-2,6-naphthalate) Polymers 0.000 claims abstract description 6
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- 229920001940 conductive polymer Polymers 0.000 claims abstract description 4
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- 239000002322 conducting polymer Substances 0.000 claims abstract description 3
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 claims abstract description 3
- 229920001721 polyimide Polymers 0.000 claims abstract description 3
- 239000000243 solution Substances 0.000 claims description 44
- 238000004528 spin coating Methods 0.000 claims description 32
- 239000004793 Polystyrene Substances 0.000 claims description 27
- IAZDPXIOMUYVGZ-UHFFFAOYSA-N Dimethylsulphoxide Chemical compound CS(C)=O IAZDPXIOMUYVGZ-UHFFFAOYSA-N 0.000 claims description 20
- 239000011248 coating agent Substances 0.000 claims description 10
- 238000000576 coating method Methods 0.000 claims description 10
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- 239000011259 mixed solution Substances 0.000 claims description 8
- 239000000203 mixture Substances 0.000 claims description 8
- 229920002223 polystyrene Polymers 0.000 claims description 8
- 239000003054 catalyst Substances 0.000 claims description 6
- 238000000151 deposition Methods 0.000 claims description 6
- 238000007639 printing Methods 0.000 claims description 5
- 230000008569 process Effects 0.000 claims description 5
- 230000008021 deposition Effects 0.000 claims description 4
- GSEJCLTVZPLZKY-UHFFFAOYSA-N Triethanolamine Chemical compound OCCN(CCO)CCO GSEJCLTVZPLZKY-UHFFFAOYSA-N 0.000 claims description 3
- 239000007788 liquid Substances 0.000 claims description 2
- 150000008065 acid anhydrides Chemical class 0.000 claims 1
- 230000008901 benefit Effects 0.000 abstract description 3
- 238000004519 manufacturing process Methods 0.000 abstract description 2
- 239000000123 paper Substances 0.000 abstract description 2
- 239000010408 film Substances 0.000 description 54
- 239000010409 thin film Substances 0.000 description 24
- ZMANZCXQSJIPKH-UHFFFAOYSA-N Triethylamine Chemical compound CCN(CC)CC ZMANZCXQSJIPKH-UHFFFAOYSA-N 0.000 description 18
- 239000000463 material Substances 0.000 description 9
- 238000005452 bending Methods 0.000 description 6
- 238000005516 engineering process Methods 0.000 description 6
- 239000011368 organic material Substances 0.000 description 5
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- CBENFWSGALASAD-UHFFFAOYSA-N Ozone Chemical compound [O-][O+]=O CBENFWSGALASAD-UHFFFAOYSA-N 0.000 description 4
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- MRNHPUHPBOKKQT-UHFFFAOYSA-N indium;tin;hydrate Chemical compound O.[In].[Sn] MRNHPUHPBOKKQT-UHFFFAOYSA-N 0.000 description 3
- 238000009413 insulation Methods 0.000 description 3
- 238000012545 processing Methods 0.000 description 3
- LLHKCFNBLRBOGN-UHFFFAOYSA-N propylene glycol methyl ether acetate Chemical compound COCC(C)OC(C)=O LLHKCFNBLRBOGN-UHFFFAOYSA-N 0.000 description 3
- 238000012546 transfer Methods 0.000 description 3
- FCEHBMOGCRZNNI-UHFFFAOYSA-N 1-benzothiophene Chemical compound C1=CC=C2SC=CC2=C1 FCEHBMOGCRZNNI-UHFFFAOYSA-N 0.000 description 2
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
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- 235000007164 Oryza sativa Nutrition 0.000 description 2
- PPBRXRYQALVLMV-UHFFFAOYSA-N Styrene Chemical compound C=CC1=CC=CC=C1 PPBRXRYQALVLMV-UHFFFAOYSA-N 0.000 description 2
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 2
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- MVPPADPHJFYWMZ-UHFFFAOYSA-N chlorobenzene Chemical compound ClC1=CC=CC=C1 MVPPADPHJFYWMZ-UHFFFAOYSA-N 0.000 description 2
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- 238000012986 modification Methods 0.000 description 2
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- 229910052760 oxygen Inorganic materials 0.000 description 2
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- 238000002207 thermal evaporation Methods 0.000 description 2
- QHHKLPCQTTWFSS-UHFFFAOYSA-N 5-[2-(1,3-dioxo-2-benzofuran-5-yl)-1,1,1,3,3,3-hexafluoropropan-2-yl]-2-benzofuran-1,3-dione Chemical compound C1=C2C(=O)OC(=O)C2=CC(C(C=2C=C3C(=O)OC(=O)C3=CC=2)(C(F)(F)F)C(F)(F)F)=C1 QHHKLPCQTTWFSS-UHFFFAOYSA-N 0.000 description 1
- 229920001609 Poly(3,4-ethylenedioxythiophene) Polymers 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- 229910021417 amorphous silicon Inorganic materials 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 239000003153 chemical reaction reagent Substances 0.000 description 1
- 229910052681 coesite Inorganic materials 0.000 description 1
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- 229910052906 cristobalite Inorganic materials 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
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- LYCAIKOWRPUZTN-UHFFFAOYSA-N ethylene glycol Natural products OCCO LYCAIKOWRPUZTN-UHFFFAOYSA-N 0.000 description 1
- 230000002349 favourable effect Effects 0.000 description 1
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- 235000019253 formic acid Nutrition 0.000 description 1
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- 125000002887 hydroxy group Chemical group [H]O* 0.000 description 1
- WGCNASOHLSPBMP-UHFFFAOYSA-N hydroxyacetaldehyde Natural products OCC=O WGCNASOHLSPBMP-UHFFFAOYSA-N 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- RHZWSUVWRRXEJF-UHFFFAOYSA-N indium tin Chemical compound [In].[Sn] RHZWSUVWRRXEJF-UHFFFAOYSA-N 0.000 description 1
- 230000008595 infiltration Effects 0.000 description 1
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- 229910010272 inorganic material Inorganic materials 0.000 description 1
- 239000011147 inorganic material Substances 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 239000002070 nanowire Substances 0.000 description 1
- KYTZHLUVELPASH-UHFFFAOYSA-N naphthalene-1,2-dicarboxylic acid Chemical compound C1=CC=CC2=C(C(O)=O)C(C(=O)O)=CC=C21 KYTZHLUVELPASH-UHFFFAOYSA-N 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 238000005457 optimization Methods 0.000 description 1
- 238000010422 painting Methods 0.000 description 1
- 239000011970 polystyrene sulfonate Substances 0.000 description 1
- 229960002796 polystyrene sulfonate Drugs 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 150000003384 small molecules Chemical class 0.000 description 1
- 239000002195 soluble material Substances 0.000 description 1
- 238000001179 sorption measurement Methods 0.000 description 1
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- 230000003746 surface roughness Effects 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
- 229910052905 tridymite Inorganic materials 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K77/00—Constructional details of devices covered by this subclass and not covered by groups H10K10/80, H10K30/80, H10K50/80 or H10K59/80
- H10K77/10—Substrates, e.g. flexible substrates
- H10K77/111—Flexible substrates
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
- H10K10/40—Organic transistors
- H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
- H10K10/462—Insulated gate field-effect transistors [IGFETs]
- H10K10/466—Lateral bottom-gate IGFETs comprising only a single gate
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
- H10K71/10—Deposition of organic active material
- H10K71/12—Deposition of organic active material using liquid deposition, e.g. spin coating
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
- H10K85/10—Organic polymers or oligomers
- H10K85/111—Organic polymers or oligomers comprising aromatic, heteroaromatic, or aryl chains, e.g. polyaniline, polyphenylene or polyphenylene vinylene
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/549—Organic PV cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
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- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Materials Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Thin Film Transistor (AREA)
Abstract
The invention discloses a kind of flexible organic film transistors and preparation method thereof, it is successively made of flexible substrates, gate electrode, insulating layer, semiconductor layer and source-drain electrode, flexible substrates are polyimides, polyethylene terephthalate, polyethylene naphthalate or paper；The gate electrode is one of indium tin oxide films, Al-Doped ZnO, silver or nano-silver thread film, conducting polymer PEDOT:PSS or PEDOT:PSS and AgNWs laminated film；Insulating layer is poly- 4- vinyl-phenol and the cross-linking agent that esterification obtains occurs for 4,4'- (hexafluoro isopropyl alkene) two anhydride phthalic acids；Semiconductor layer is C8-BTBT；Source-drain electrode is gold or silver or nano-silver thread or PEDOT:PSS.Flexible organic film transistor of the invention has many advantages, such as high mobility, low-work voltage, perfect switch ratio, good flexibility, and solwution method preparation process is simple, good in economic efficiency, and is applicable to large area production.
Description
Technical field
The invention belongs to technical field of semiconductor device, and in particular to a kind of high mobility based on different gate electrodes is flexible
Organic Thin Film Transistors and preparation method thereof.
Background technique
Organic Thin Film Transistors has preparation process is simple, at low cost, light weight, material source is wide, flexibility is good etc.
Advantage is the research emphasis of next-generation flexible electronic technology, can be widely applied to Display panel, sensor, man-machine interface, electronics
Skin, the fields such as wearable device.Organic Thin Film Transistors concept has constantly been sent out forward since the 1970s is suggested
Exhibition, substrate are flexibility by rigid transition, and more organic materials are designed to synthesize, and enrich the selection of material.It is flexible organic thin
The structure of film transistor (flexible organic thin film transistor) device is generally by substrate, grid, insulation
Layer, semiconductor layer, source/drain electrode are constituted, since organic material and flexible substrates have good compatibility, except electrode uses oxygen
To change indium tin (ITO), outside the metal materials such as gold and nano-silver thread (Ag NWs), the other materials of transistor is all organic material, from
And flexible organic film transistor can be prepared using the small solwution method of low temperature energy consumption on a large scale.
In organic electronics field, soluble material can be at room temperature or in atmospheric environment by simply revolving because of it
The method of painting, blade coating or inkjet printing forms uniform non-porous high-quality thin film, and is concerned, and is especially commercially producing
In, inexpensive technology has more advantage.Organic Thin Film Transistors passes through the development in more than 30 years, wherein organic partly being led based on some
The single transistor device performance of body material has surmounted the inorganic transistors based on amorphous silicon, to have actual using valence
Value.Using solwution method preparation process simple to operation, the Organic Thin Film Transistors in rigid basement be can provide higher than 10cm2/
The device mobility of Vs, but on a flexible substrate, the mobility of Organic Thin Film Transistors is difficult to break through 10cm2/ Vs, the present invention
People analyzes its reason and is: being on the one hand that the organic film of solution manufacturing method depositing high-quality on a flexible substrate is more tired
Difficulty, further aspect is that the selection of organic material, using compatible with flexible substrates, wetability is good, not interreaction, dissolubility
Height, the good organic material of air stability is the premise for obtaining high mobility flexible organic film transistor, and device solwution method
The optimal setting of spin coating proceeding is then crucial in preparation process.
Summary of the invention
The technical problem to be solved by the present invention is to overcome the shortcomings of to mention in background above technology and defect, provide one
Kind high mobility flexible organic film transistor and its low cost preparation method.
In order to solve the above technical problems, technical solution proposed by the present invention are as follows:
A kind of flexible organic film transistor, successively by flexible substrates, gate electrode, insulating layer, semiconductor layer and source and drain electricity
Pole is constituted, and the flexible substrates are polyimides, polyethylene terephthalate, polyethylene naphthalate or paper；It is described
Gate electrode is indium tin oxide films, Al-Doped ZnO, silver or nano-silver thread film, conducting polymer PEDOT:PSS or PEDOT:
PSS and AgNWs laminated film；The insulating layer is that poly- 4- vinyl-phenol and 4,4'- (hexafluoro isopropyl alkene) two anhydride phthalic acids occur
The cross-linking agent PVP-HDA film that esterification obtains；The semiconductor layer is C8-BTBT；The source-drain electrode be gold or silver,
Either nano-silver thread or PEDOT:PSS.
The preparation method of the flexible organic film transistor, includes the steps that following: configuration PVP-HDA cross-linking agent solution
With C8-BTBT and polystyrene blends solution, then pass through spin coating, blade coating, slot coated, inkjet printing or roll-to-roll printing
Method deposit form insulating layer and semiconductor layer respectively, finally deposit source-drain electrode on the semiconductor layer.
Further, the PEDOT:PSS and AgNWs laminated film is prepared with the following method: configuration PEDOT:PSS with
The mixed solution of dimethyl sulfoxide, dimethyl sulfoxide volume ratio 3%~8% are deposited on nano-silver thread film, then 120
~160 DEG C of annealing temperature is handled 10~40 minutes.
Further, the PVP-HDA cross-linking agent solution is prepared using following methods: the instillation of HDA solution is had catalyst
The PVP solution of triethanolamine, is stirred to react.
Further, 1g PVP solute is corresponding is added 10~25 μ L TEA.
Further, PVP-HDA cross-linking agent solution is passed through into spin coating, blade coating, slot coated, inkjet printing or roll-to-roll print
Brush method is deposited on gate electrode, is then made annealing treatment.
Further, the C8-BTBT and C8-BTBT in polystyrene blends solution and polystyrene mass ratio are 5:
1~20:1.
Further, by C8-BTBT and gathered using spin coating, blade coating, slot coated, inkjet printing or roll-to-roll printing process
Styrene mixture liquid deposition is on the insulating layer.
It the principle of the invention and has the beneficial effect that:
1) the flexible substrates PET and PEN transparency is good, and process is simple, has mechanical flexibility, can preferably obstruct
The infiltration of oxygen and steam.Flexible substrates and gate electrode, insulating layer have favorable compatibility between semiconductor layer.Tin indium oxide is received
Rice silver wire can be deposited on its substrate surface and form smooth conductive film.
2) PVP wetability in above-mentioned flexible substrates is good, can be formed continuously by spin-coating method without UV ozone processing
Non-porous insulating layer of thin-film.But insulating layer is according to single PVP, and due to the presence of hydroxyl, PVP molecule itself has polarity,
This polarity can have an impact device performance, such as hysteresis phenomenon or threshold voltage shift, using single PVP-PEMEA solution
The film pin hole that spin coating obtains is larger.
The present invention use cross-linking agent PVP-HDA, insulation bed roughness it is small (RMS~0.5nm), not because mutually separating caused by
Aperture, it is smooth non-porous, it is formed with the insulating layer conducive to carrier transport-semiconductor layer interface, dielectric properties are more preferable.Compared to inorganic
Insulating layer, so that the operation voltage of Organic Thin Film Transistors of the invention is low, energy consumption is small, and leakage current density is less than same thickness
(10nm~400nm) SiO2Inorganic insulation layer.
3) semiconductor layer uses high-performance and the good conjugation small molecule material C8-BTBT of air stability, prepared crystalline substance
Body tube device still has good performance after a long time placement in air.But since crystallization temperature is low, pass through the single C8- of spin coating
BTBT solution is unable to get continuous film.
PS is added in the present invention, and PS plays the role of increasing mixed solution concentration, while can delay C8- when being centrifuged spin coating
The crystallization of BTBT advantageously forms continuous and high crystallinity semiconductor layer film.PS can be sent out in the film of this metastable phase
It is raw mutually to separate, insulating layer-semiconductor layer interface is deposited to, the trap at further filling interface reduces defect.So that semiconductor
Layer better crystallinity degree and uniform continuous, is beneficial to the transmission of carrier.
4) insulating layer PVP-HDA and semiconductor layer are prepared using simple solution spin-coating method.What centrifugation spin coating obtained partly leads
Body thin film forms a film more continuous compared to traditional center spin coating method, and roughness is small, and crystallinity is high.
Formula and the flexible organic film transistor of improvement spin coating proceeding preparation of the present invention by optimization material, mobility
High (average mobility > 15cm2/ Vs), operation voltage is low (| V | < 25V), on-off ratio ideal (Ion/Ioff>103), it is good flexible
Property.Spin coating proceeding is optimized by improved materials formula using solwution method simple to operation and inexpensive, repeats and realizes greatly
Area high yield preparation, for improving the performance of flexible organic film transistor and realizing that its practical application is of great significance.
Detailed description of the invention
In order to more clearly explain the embodiment of the invention or the technical proposal in the existing technology, to embodiment or will show below
There is attached drawing needed in technical description to be briefly described, it should be apparent that, the accompanying drawings in the following description is the present invention
Some embodiments for those of ordinary skill in the art without creative efforts, can also basis
These attached drawings obtain other attached drawings.
Fig. 1 is flexible organic film transistor device structures schematic diagram of the present invention；
Fig. 2 is the insulating layer PVP-HDA film morphology of flexible organic film transistor in the embodiment of the present invention 1；
Fig. 3 is the semiconductor layer film morphology of flexible organic film transistor in the embodiment of the present invention 1；
Fig. 4 is the transfer characteristic curve of flexible organic film transistor in the embodiment of the present invention 1；
Fig. 5 is the output characteristic curve of flexible organic film transistor in the embodiment of the present invention 1；
Fig. 6 is that the transfer of the Organic Thin Film Transistors bending front and back in the embodiment of the present invention 2 based on AgNWs/PET substrate is special
Linearity curve.
Specific embodiment
To facilitate the understanding of the present invention, the present invention is done below in conjunction with Figure of description and preferred embodiment more complete
Face meticulously describes, but protection scope of the present invention is not limited to following specific embodiments.
Unless otherwise defined, all technical terms used hereinafter are generally understood meaning phase with those skilled in the art
Together.Technical term used herein is intended merely to the purpose of description specific embodiment, and it is of the invention to be not intended to limitation
Protection scope.
Unless otherwise specified, various raw material, reagent, the instrument and equipment etc. used in the present invention can pass through city
Field is commercially available or can be prepared by existing method.
The Chinese and English title of chemical substance used in the present invention is as follows:
Polyethylene terephthalate (Polyethylene terephthalate, PET) and poly- naphthalenedicarboxylic acid second two
Alcohol ester (Polyethylene naphthalate two formic acid glycol ester, PEN)；Tin indium oxide
(ITO)；Nano-silver thread (Ag NWs)；Poly- (3,4- ethene dioxythiophene)-polystyrolsulfon acid (poly (3,4-
Ethylenedioxythiophene): polystyrene sulfonate, PEDOT:PSS)；Poly- 4- vinyl-phenol (poly
(4-vinyl-phenol), PVP)；4,4'- (hexafluoro isopropyl alkene) two anhydride phthalic acids (4,4 '-
(hexafluoroisopropylidene) diphthalic anhydride, HDA)；2,7- dioctyl [1] benzothiophene is simultaneously
[3,2-b] benzothiophene (2,7-dioctyl [1] benzothieno [3,2-b] [1] benzothiophene, C8-BTBT)；It is poly-
Styrene (polystyrene, PS).
The molecular structural formula of C8-BTBT, PS and cross-linking agent PVP-HDA are as follows:
In a specific embodiment of the invention, gate electrode ito thin film thickness is about 130 nanometers, and sheet resistance is 30~35
Ω/□.ITO/PET, PET base can directly be bought.The preparation of nano-silver thread film: nano-silver thread is dispersed in ethanol solution
In, on the pet substrate, Ag NWs/PET substrate can be obtained in annealing drying for coating.Nano-silver thread is staggeredly stacked to form conductive thin
Film, sheet resistance are 25~30 Ω/.
In a specific embodiment of the invention, the preparation of AgNWs-PEDOT:PSS: configuration organic conductive polymer
The mixed solution of PEDOT:PSS and dimethyl sulfoxide (DMSO), the volume ratio of DMSO are 3%~8%.Room temperature after the mixing of two solution
Lower stirring 30min.Using sol evenning machine with the revolving speed center spin coating 30 of the acceleration of 300~500RPM/s and 5000~7000RPM
Second, be spin-coated in Ag NWs/PET substrate, and then in air 120~160 DEG C anneal 10~40 minutes.Because of PEDOT:PSS
Solution surface tension is big, so Ag NWs/PET substrate, which needs preparatory UV ozone to handle 2~5min, enhances its adsorption
Power.DMSO can help to improve the conductivity of PEDOT:PSS film in conjunction with insulating materials PSS.PEDOT:PSS, which is spin-coated on, to be received
On rice silver wire film, the gully between nano wire is filled, obtained composite conductive thin film sheet resistance is 30~35 Ω/.
In a specific embodiment of the invention, the preparation of insulating layer material PVP-HDA cross-linking agent: PVP powder and HDA
Powder 10:1 in mass ratio is stirred respectively is dissolved completely in propylene glycol methyl ether acetate (PGMEA) solvent for 10 hours, according to exhausted
The concentration of the specific requirement of edge layer dielectricity, PVP solution can be configured to 20mg/ml~200mg/ml, add a small amount of catalyst
For triethylamine (TEA) to PVP-PEMEA solution, general 1g PVP solute is corresponding to be added 10~25 μ L TEA, and it is small to continue stirring 2~3
When be scattered in catalyst in solution, then with liquid-transfering gun draw HDA-PGMEA solution, slowly instill have catalyst TEA's
PVP-PGMEA solution, while the high-speed stirred on mixing platform promote the progress of esterification.Obtained mixed solution can be after
Continuous stirring 1~2 hour, then filtered with 0.45 μm of organic filter mouth.Use the method for center spin coating by PVP- using sol evenning machine
HDA solution is deposited on ITO/PET, Ag NWs/ with 300~500RPM/s acceleration, the revolving speed spin coating 60s of 2000~6000RPM
In PET and Ag NWs-PEDOT:PSS/PET substrate, anneal 1 hour at a temperature of 100 DEG C in the glove box full of nitrogen.Solution
The insulating layer of thin-film thickness that the spin coating of method center obtains is about 350 nanometers, and wherein the average molecular weight of PVP is 21000.
In a specific embodiment of the invention, the preparation of semiconductor layer film: preparation C8-BTBT and PS mixing first
C8-BTBT powder and PS particle are made solvent with chlorobenzene or o-dichlorohenzene by solution, and the solution concentration of single C8-BTBT is
The concentration of 5mg:0.9ml, PS are 5mg/ml, need to stir when dissolving PS particle.It is to configure 1ml C8-BTBT and PS solution
Example, the PS solution for drawing 0.1ml with liquid-transfering gun keep C8-BTBT and PS in mixed solution molten into the C8-BTBT solution of 0.9ml
The mass ratio of matter is 10:1.It can in the same way, configure the C8-BTBT:PS's (5~20:1) of other mass ratioes as needed
Blend solution.The deposition of film is set as 10~40RPM/s using substep centrifugation spin-coating method, the spin coating acceleration of first stage,
Accelerate to 800~1200RPM, 1~2s of spin coating.The spin coating acceleration of second stage is set as 80~120RPM/s, accelerates to
2000~4000RPM, spin coating 20s, finally stops.
In a specific embodiment of the invention, source-drain electrode is by vacuum thermal evaporation technology or inkjet printing technology
The symmetric electrode array prepared on the semiconductor layer, electrode ditch road width are 800~1000 μm, a length of 20 μm~100 μm.
In a specific embodiment of the invention, the method for center spin coating and centrifugation spin coating, the base of center spin coating are used
Bottom is placed in spin coating instrument spindle central, and the substrate for being centrifuged spin coating is placed in 3 centimetres from spin coating instrument spindle central or so of position.
Embodiment 1:
In the present embodiment, the device architecture of flexible organic film transistor is as shown in Figure 1, it mainly includes substrate 1, grid electricity
Pole 2, insulating layer 3, semiconductor layer 4 and source-drain electrode 5.Gate electrode 2 is located at the upper surface of substrate 1, and insulating layer 3 is located at gate electrode 2
Upper surface, semiconductor layer 4 is located at the upper surface of insulating layer 3, and source-drain electrode 5 is located at the upper surface of semiconductor layer 4.Wherein, base
Bottom 1 is polyethylene terephthalate (PET), and gate electrode 2 is electroconductive ITO film, and insulating layer 3 is PVP-HDA cross-linking agent, partly
Conductor layer 4 is C8-BTBT:PS film, and source-drain electrode 5 is metallic gold.
The preparation method of the flexible organic film transistor mainly comprises the steps that
(1) PVP powder and HDA powder are stirred respectively by quality 1g:0.1g and are dissolved in 5ml PGMEA solution,
20 μ L catalyst TEA are added to PVP-PGMEA solution, HDA solution is mixed with PVP later, PVP-HDA mixed solution is configured, in
In heart spin-on deposition to ITO/PET substrate, 100 degrees Celsius are annealed 1 hour.
(2) the solute ratio of C8-BTBT:PS is 10:1, and C8-BTBT concentration is 5mg/ml in blend solution, is then centrifuged for revolving
The upper surface for being coated in insulating layer (3) PVP-HDA forms semiconductor layer.
(3) gold/silver electrode is prepared to get flexible organic by mask vacuum thermal evaporation in the upper surface of semiconductor layer 4
Thin film transistor (TFT).
After measured, the insulating layer PVP-HDA film thickness of the flexible organic film transistor is about 350nm, pattern such as Fig. 2 institute
Show, film surface is smooth non-porous, and surface roughness is~0.6nm.Semiconductor layer C8-BTBT:PS film thickness is 10~20nm,
Pattern is as shown in Figure 3.Source-drain electrode is the gold thin film of 70nm thickness.Prepared flexible organic film transistor, it is typical to turn
Characteristic curve is moved as shown in figure 4, illustrating that gained flexible device mobility can be up to 24.1cm2/ Vs, threshold voltage it is low (-
4.46V), on-off ratio ideal (9.86 × 105).The output characteristic curve of same device is as shown in Figure 5, it can be seen that gate bias energy
, there is pinch-off region under low bias, shows that insulating dielectric performance is good, leakage current in the output electric current for preferably adjusting transistor
Density very little can be compared favourably with inorganic, metal oxide semiconductor transistor, while light weight, flexibility are good, can make the next generation
The switch element of flexible display, or use complementary with the device of inorganic material preparation.
Embodiment 2:
In the present embodiment, for basic structure referring to embodiment 1, substrate 1 is polyethylene terephthalate (PET), grid electricity
Pole 2 is conduction Ag NWs film, and insulating layer 3 is PVP-HDA cross-linking agent, and semiconductor layer 4 is C8-BTBT:PS film, source-drain electrode
5 be metallic gold or silver.The preparation method of the flexibility organic photodetector mainly comprises the steps that
It can refer to (1), (2), (3) step of embodiment 1, Ag NWs is dispersed in ethanol solution, is then coated on base
Thermal annealing is dried on the PET of bottom, forms the very thin Ag NWs conductive film being staggeredly stacked.It can be by voluntarily preparing or passing through quotient
The Ag NWs/PET substrate of family's purchase process similarity preparation.It should be noted that before depositing insulating layer PVP-HDA film, it is real
Applying gate electrode film ITO in example 1 can be used UV ozone processing 20min to increase surface energy, improve solution adsorptivity.And this
Ag NWs in embodiment makees gate electrode, and ultraviolet irradiation can destroy nano-silver thread, therefore does not need to carry out Ag NWs/PET substrate
UV ozone processing, direct center spin coating PVP-HDA solution.
After measured, the obtained Organic Thin Film Transistors field effect behavior based on Ag NWs gate electrode is good, and device is average
Mobility (19.5cm2/ Vs) it is higher than the Organic Thin Film Transistors based on ITO gate electrode, essentially consist in the conductivity of nano-silver thread
Higher than ITO, can be inspired under low bias compared with multi-charge, operation voltage is lower, to improve device mobility.Ag NWs with
ITO is compared, and stretchable and flexible can be more preferable, and ITO is continuously bent 2000 times with bending radius 9mm, is seen under scanning electron microscope
Observing its film surface has obvious slight crack, and it is even more that sheet resistance is increased to original 20 times.Ag NWs is continuous with bending radius 6mm
Bending 2000 times, pattern and sheet resistance are substantially unchanged, thus Ag NWs/PET substrate be more suitable for make flexibility requirements it is high
Organic Thin Film Transistors.Thin film transistor (TFT) typically based on AgNWs/PET substrate is bent the transfer characteristic curve of front and back as schemed
Shown in 6, after which continuously bends 2000 times when bending radius is 6mm, mobility is still able to maintain initial value
80%, while the only a small amount of reduction of the value of threshold voltage and on-off ratio.
Embodiment 3:
In the present embodiment, for basic structure referring to embodiment 1, substrate 1 is polyethylene terephthalate (PET), grid electricity
Pole 2 is conduction Ag NWs-PEDOT:PSS film, and insulating layer 3 is PVP-HDA cross-linking agent, and semiconductor layer 4 is that C8-BTBT:PS is thin
Film, source-drain electrode 5 are metallic gold or silver.
The preparation method of the flexible organic film transistor mainly comprises the steps that
(1) DMSO of total 5% volume of mixed solution is added in PEDOT:PSS, stirs 30min at room temperature.By the blending
Solution blade coating deposits in Ag NWs/PET substrate, then 130 DEG C of annealing 30min in air, and substrate is placed in N after annealing2Or
It is saved in argon gas glove box.
(2) device preparation can be completed in (1), (2) of reference implementation example 1, (3) step.
After measured, the flexible organic film transistor performance is superior, device highest mobility > 40cm2/ Vs, average mobility
Rate 26.5cm2/ Vs illustrates that the laminated film of Ag NWs-PEDOT:PSS is suitable for the gate electrode of transistor.PEDOT:PSS can be filled out
The gap between Ag NWs is filled, keeps conductive film more smooth, conducting channel can be formed when adding gate bias lower, is conducive to improve
The electric current of source-drain electrode.Ag NWs-PEDOT:PSS/PET substrate flexibility is good, with bending radius 6mm continuous bend 2000 times
Afterwards, pattern and sheet resistance are very ideal flexible transistor device substrates all without significant change, and the flexibility based on the substrate is organic
Thin film transistor (TFT), bend front and back device performance variation tendency with based on the similar of AgNWs/PET substrate.It is inhaled since PVP has
It is moist, and PEDOT:PSS and DMSO are hydrophilic materials, prepared device is stored in glove box or humidity compared in low environment.
Above-mentioned only presently preferred embodiments of the present invention, is not intended to limit the present invention in any form.Therefore, it is all not
Be detached from technical solution of the present invention content, according to the present invention technical spirit it is made to the above embodiment it is any it is simple modification, etc.
With variation and modification, all shall fall within the protection scope of the technical scheme of the invention.
Claims (8)
1. a kind of flexible organic film transistor, successively by flexible substrates, gate electrode, insulating layer, semiconductor layer and source-drain electrode
It constitutes, which is characterized in that the flexible substrates are polyimides, polyethylene terephthalate, polyethylene naphthalate
Or paper；The gate electrode is indium tin oxide films, Al-Doped ZnO, silver or nano-silver thread film, conducting polymer PEDOT:PSS
Or PEDOT:PSS and AgNWs laminated film；The insulating layer is poly- 4- vinyl-phenol and 4,4'- (hexafluoro isopropyl alkene) two phthaleins
The cross-linking agent PVP-HDA film that esterification obtains occurs for acid anhydrides；The semiconductor layer is C8-BTBT；The source-drain electrode
For gold or silver or nano-silver thread or PEDOT:PSS.
2. the preparation method of flexible organic film transistor described in a kind of claim 1, which is characterized in that including following steps
Rapid: then configuration PVP-HDA cross-linking agent solution and C8-BTBT and polystyrene blends solution pass through spin coating, blade coating, slit
The method of coating, inkjet printing or roll-to-roll printing deposits respectively forms insulating layer and semiconductor layer, finally on the semiconductor layer
Deposit source-drain electrode.
3. the preparation method of flexible organic film transistor according to claim 2, which is characterized in that the PEDOT:
PSS and AgNWs laminated film is prepared with the following method: the mixed solution of configuration PEDOT:PSS and dimethyl sulfoxide, dimethyl
Sulfoxide volume ratio 3%~8% is deposited on nano-silver thread film, and then the annealing temperature at 120~160 DEG C handles 10~40
Minute.
4. the preparation method of flexible organic film transistor according to claim 2, which is characterized in that the PVP-HDA
Cross-linking agent solution is prepared using following methods: HDA solution being instilled to the PVP solution for having catalyst triethanolamine, is stirred to react.
5. the preparation method of flexible organic film transistor according to claim 4, which is characterized in that 1g PVP solute pair
10~25 μ L TEA should be added.
6. the preparation method of flexible organic film transistor according to claim 2 or 4, which is characterized in that by PVP-HDA
Cross-linking agent solution is deposited on gate electrode by spin coating, blade coating, slot coated, inkjet printing or roll-to-roll printing process, then
Annealing.
7. the preparation method of flexible organic film transistor according to claim 2, which is characterized in that the C8-BTBT
It is 5:1~20:1 with C8-BTBT in polystyrene blends solution and polystyrene mass ratio.
8. the preparation method of flexible organic film transistor according to claim 2 or 7, which is characterized in that using spin coating,
C8-BTBT and polystyrene blends liquid deposition are being insulated in blade coating, slot coated, inkjet printing or roll-to-roll printing process
On layer.
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