CN111875385B - 一种高强度、高硬度且低模量硼化钛纳米复相陶瓷的制备方法 - Google Patents

一种高强度、高硬度且低模量硼化钛纳米复相陶瓷的制备方法 Download PDF

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CN111875385B
CN111875385B CN202010692435.2A CN202010692435A CN111875385B CN 111875385 B CN111875385 B CN 111875385B CN 202010692435 A CN202010692435 A CN 202010692435A CN 111875385 B CN111875385 B CN 111875385B
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邹冀
刘晶晶
季伟
傅正义
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Abstract

本发明提供一种高强度、高硬度且低模量硼化钛纳米复相陶瓷的制备方法,其特征在于:采用市售的TiCxN1‑x、B、B4C和Si粉体为原料,根据相应的化学反应方程式进行粉体的配比,将原料粉体混料、干燥、过筛后利用热压烧结或放电等离子体实现其致密化,得到所需复相陶瓷。本发明方法利用反应烧结原料的固溶体效应,通过反应与烧结同时发生这一特征,可以获得TiB2晶粒在纳米尺度的复相陶瓷,最终获得的复相陶瓷同时拥有高强度,硬度和低弹性模量;且原料价格便宜,方便易得,制备工艺简单,周期短,在1650℃‑2000℃即可实现复相陶瓷的烧结致密化,有利于降低材料制备过程所需的能耗,获得陶瓷的致密度高。

Description

一种高强度、高硬度且低模量硼化钛纳米复相陶瓷的制备 方法
技术领域
本发明属于非氧化物结构陶瓷领域,具体涉及一种高强度、高硬度且低模量硼化钛纳米复相陶瓷的制备方法。
背景技术
通过金属与陶瓷的连接和复合可以充分发挥金属和陶瓷材料的各自性能优势,从而形成性能更加优异的宏观结构复合组件。然而,一般陶瓷材料的应变容限很小,与钢等金属材料相比具有更高的弹性模量,在与金属材料连接使用时经常发生陶瓷部分由于热应力或机械应力过大而被破坏的情况。这使得金属-陶瓷连接部件在服役中的可靠性下降,获得高强度,低模量的陶瓷材料是解决这一问题的关键。
实现高强度且低模量的陶瓷材料一般有两种途径。一是通过在陶瓷材料内部引入微气孔。当在陶瓷基体中引入适量,分布均匀且形貌可控的气孔时,可以降低陶瓷模量的同时,维持材料的强度或避免材料强度急剧下降。另一种途径是在陶瓷基体中添加低弹性模量第二相来降低材料整体的弹性模量。六方氮化硼不仅弹性模量低且与绝大多数陶瓷基体的化学相容性好,因此它常用做降低材料弹性模量的第二相。但是,BN晶粒很难在陶瓷基体中均匀分散,它的直接添加很容易造成复相陶瓷强度的急剧下降。将陶瓷粉体在液相环境中包裹硼酸和尿素等前躯体,再将经包裹后的粉体在氮气或氨气下进行热处理,可以在陶瓷粉体表面包裹一层纳米尺度的BN层。以BN包裹的粉体为原料,通过热压烧结,Kusunose T等人获得了一系列高强度复相含氮化硼陶瓷,包括Si3N4/BN等(J Am Ceram Soc,2002,85(11):2678~2688)。
在上述研究中,尽管通过气孔和BN引入方式的改变以及其分散的均匀性的提升,所得到复相陶瓷弹性模量得以下降,弯曲强度也在一定程度上得到保持。但它们的引入也大幅度降低了材料的硬度,从而使得金属-陶瓷连接部件中陶瓷一侧的应用受到限制。
发明内容
针对现有技术存在的问题,本发明拟提供一种通过反应烧结的途径获得高强度,低模量且高硬度的TiB2-B4C-BN和TiB2-SiC-BN纳米复相陶瓷的方法。利用碳氮化物固溶体为反应烧结的原料,抑制烧结中可引发的自蔓延现象,使得在烧结过程中反应和致密化得以同时发生。由于在致密化过程中逐步反应生成的TiB2晶粒在纳米尺度,从而实现了陶瓷的晶粒细化和强化。原位生成的由亚微米尺度B4C或SiC晶粒相互贯通而形成的骨架则提高了材料的硬度。利用此方法获得的TiB2基复相陶瓷具有高纯,细晶,BN相在基体中均匀分布等诸多特征。
本发明为解决现有技术中存在的问题采用的技术方案如下:
一种高强度、高硬度且低模量硼化钛纳米复相陶瓷的制备方法,其特征在于:采用市售的TiCxN1-x、B、B4C和Si粉体为原料,根据下列化学反应方程式进行粉体的配比:
TiCxN1-x+(3x+3)B=TiB2+xB4C+(1-x)BN (1)
TiCxN1-x+(0.75+0.75x)Si+(0.75-0.25x)B4C=TiB2+(0.75+0.75x)SiC+(1-x)BN
(2)
将原料粉体混料、干燥、过筛后利用热压烧结或放电等离子体实现其致密化,得到所需复相陶瓷。
所述参数x的取值范围为:0.05≤x≤0.95,通过改变参数x的值,可以在一定范围内改变所制备陶瓷中BN的含量并对其微结构和性能进行调控。
所述高强度、高硬度且低模量硼化钛纳米复相陶瓷的制备方法,具体包括如下步骤:
步骤1、混料:以市售TiCxN1-x、B、B4C和Si粉为原料,其中碳化硼和硼粉的平均粒径小于5μm,TiCxN1-x和Si粉的平均粒径小于20μm,各种粉体的纯度均大于97%;将各种原料粉体按设计的反应方程的配比进行称量,配料,以丙酮为溶剂,3mol%氧化钇稳定的氧化锆球(3Y-TZP)为混料介质,进行混料,混合后所得浆料通过旋转蒸发烘干,破碎过筛后得到混合均匀的粉料;
步骤2、烧结:根据需要的样品厚度,计算所需粉体的重量,将过筛后的粉体倒入石墨模具中,在热压烧结或放电等离子体烧结的环境下对其进行烧结,烧结环境为真空或流动的氩气气氛,通过改变烧结温度保温时间,加载压力,升温速度等参数实现复相陶瓷的致密化和性能优化。
所述烧结温度范围为1650℃-2000℃。
所述保温时间范围为5-120min。
所述加载压力范围为5-75Mpa。
所述升温速度范围为10-100℃/min。
本发明具有如下优点:
1、利用反应烧结原料的固溶体效应,通过反应与烧结同时发生这一特征,可以获得TiB2晶粒在纳米尺度的复相陶瓷,最终获得的复相陶瓷同时拥有高强度,硬度和低弹性模量;
2、原料价格便宜,方便易得,制备工艺简单,周期短,在1650℃-2000℃即可实现复相陶瓷的烧结致密化,有利于降低材料制备过程所需的能耗,获得陶瓷的致密度高;
3、原位引入的亚微米级SiC或B4C晶粒互相贯通,在陶瓷微结构中形成硬质的骨架提高了复相陶瓷的硬度和强度,而原位生成的氮化硼晶粒则降低了材料的模量;
4、不需要额外添加BN,BN在复相陶瓷中的含量即可以通过TiCxN1-x中x值的变化而改变,从而原位调控材料的显微结构和力学性能。
附图说明
图1为实施例1得到样品的显微形貌;
图2为实施例1得到样品的XRD;
图3为实施例3得到样品的显微形貌;
图4为实施例3得到样品的XRD;
图5为实施例7得到样品的XRD。
具体实施方式
下面通过实施例,并结合附图,对本发明的技术方案作进一步具体的说明。
实施例1
以TiC0.7N0.3(粒径为5-20μm)和硼粉(粒径为0.1-1.5μm)为原料,按照方程式(3)进行配料
TiC0.7N0.3+5.1 B=TiB2+0.7B4C+0.3 BN (3)
获得样品相组成(体积含量)为45%TiB2-45%B4C-10%BN。
以丙酮(纯度>99%)为溶剂,3Y-TZP球为混料介质,将称量好的粉体混合并利用混料机进行混料,混料速度为30-100rpm。混合12-36小时后,将所得浆料通过真空旋转蒸的方式在60-85℃烘干。经过烘干后的粉体破碎并过筛后倒入石墨模具中,利用放电等离子体烧结设备的对其进行压力烧结,整个过程在真空下进行。
烧结过程包含如下步骤:室温至700℃,升温速度为100℃/min,施加在样品上的压力为5MPa。在700℃保温1min后在1min内将压力升至60MPa。从700℃至1850℃,升温速度为100℃/min,压力为60MPa。在1850℃保温5min后,将压力降低至5MPa并停止加热,样品随炉冷却至室温。烧结得到样品的形貌和XRD分别如图1和图2所示。
所得样品中TiB2晶粒尺寸为170nm,复相陶瓷维氏硬度为22-26GPa,弹性模量为360-370GPa,三点弯曲强度为780-940MPa,应变容限为2.2-2.5。
实施例2
以TiC0.5N0.5(粒径为5-20μm)和硼粉(粒径为0.1-1.5μm)为原料,按照方程式(4)进行配料
TiC0.5N0.5+4.5 B=TiB2+0.5B4C+0.5 BN (4)
获得样品相组成(体积含量)为48%TiB2-35%B4C-17%BN。
以丙酮(纯度>99%)为溶剂,3Y-TZP球为混料介质,将称量好的粉体混合并利用混料机进行混料,混料速度为30-100rpm。混合12-36小时后,将所得浆料通过真空旋转蒸的方式发在60-85℃烘干。经过烘干后的粉体破碎并过筛后倒入石墨模具中,利用放电等离子体烧结设备的对其进行压力烧结,整个过程在真空下进行。
烧结过程包含如下步骤:室温至700℃,升温速度为100℃/min,施加在样品上的压力为5MPa。在700℃保温1min后在1min内将压力升至60MPa。从700℃至1850℃,升温速度为100℃/min,压力为60MPa。在1850℃保温5min后,将压力降低至5MPa并停止加热,样品随炉冷却至室温。所得样品中TiB2平均晶粒尺寸为220nm,复相陶瓷维氏硬度为18-20GPa,弹性模量为305-315GPa,三点弯曲强度为510-620MPa,应变容限为1.7-2.0。
实施例3
以TiC0.5N0.5(粒径为5-20μm)和硼粉(粒径为0.1-1.5μm)为原料,按照方程式(4)进行配料
TiC0.5N0.5+4.5 B=TiB2+0.5B4C+0.5 BN (4)
获得样品相组成(体积含量)为48%TiB2-35%B4C-17%BN。
以丙酮(纯度>99%)为溶剂,3Y-TZP球为混料介质,将称量好的粉体混合并利用混料机进行混料,混料速度为30-100rpm。混合12-36小时后,将所得浆料通过真空旋转蒸的方式发在60-85℃烘干。经过烘干后的粉体破碎并过筛后倒入石墨模具中,利用放电等离子体烧结设备的对其进行压力烧结,整个过程在真空下进行。
烧结过程包含如下步骤:室温至700℃,升温速度为100℃/min,施加在样品上的压力为5MPa。在700℃保温1min后在1min内将压力升至60MPa。从700℃至1700℃,升温速度为100℃/min,压力为60MPa。在1700℃保温5min后,将压力降低至5MPa并停止加热,样品随炉冷却至室温。烧结得到样品的形貌和XRD分别如图3和图4所示。
所得样品中TiB2平均晶粒尺寸为114nm维氏硬度为20-23GPa,弹性模量为305-315GPa,三点弯曲强度为650-780MPa,应变容限为2.1-2.6。
实施例4
以TiC0.5N0.5(粒径为5-20μm)和硼粉(粒径为0.1-1.5μm)为原料,按照方程式(4)进行配料
TiC0.5N0.5+4.5 B=TiB2+0.5B4C+0.5 BN (4)
获得样品相组成(体积含量)为48%TiB2-35%B4C-17%BN。
以丙酮(纯度>99%)为溶剂,3Y-TZP球为混料介质,将称量好的粉体混合并利用混料机进行混料,混料速度为30-100rpm。混合12-36小时后,将所得浆料通过真空旋转蒸的方式发在60-85℃烘干。经过烘干后的粉体破碎并过筛后倒入石墨模具中,利用放电等离子体烧结设备的对其进行压力烧结,整个过程在真空下进行。
烧结过程包含如下步骤:室温至700℃,升温速度为400℃/min,施加在样品上的压力为5MPa。在700℃保温1min后在1min内将压力升至60MPa。从700℃至1850℃,升温速度为100℃/min,压力为60MPa。在1850℃保温5min后,将压力降低至5MPa并停止加热,样品随炉冷却至室温。
所得样品维氏硬度为18-20GPa,弹性模量为305-315GPa,三点弯曲强度为500-700MPa,应变容限为1.6-2.3。
实施例5
以TiC0.9N0.1(粒径为5-20μm)和硼粉(粒径为0.1-1.5μm)为原料,按照方程式(5)进行配料
TiC0.9N0.1+5.7 B=TiB2+0.9B4C+0.1 BN (5)
获得样品相组成(体积含量)为42.5%TiB2-54.5%B4C-3%BN。
以丙酮(纯度>99%)为溶剂,氧化锆球为混料介质,将称量好的粉体混合并利用混料机进行混料,混料速度为30-100rpm。混合12-36小时后,将所得浆料通过真空旋转蒸的方式发在60-85℃烘干。经过烘干后的粉体破碎并过筛后倒入石墨模具中,利用放电等离子体烧结设备的对其进行压力烧结,整个过程在真空下进行。
烧结过程包含如下步骤:室温至700℃,升温速度为100℃/min,施加在样品上的压力为5MPa。在700℃保温1min后在1min内将压力升至60MPa。从700℃至1850℃,升温速度为100℃/min,压力为60MPa。在1850℃保温5min后,将压力降低至5MPa并停止加热,样品随炉冷却至室温。
所得样品维氏硬度为24-27GPa,弹性模量为470-480GPa,三点弯曲强度为850-1030MPa,应变容限为1.8-2.1。
实施例6
以TiC0.5N0.5(粒径为5-20μm),碳化硼粉(粒径为1-1.5μm)和硅粉(粒径为1-5μm)为原料,按照方程式(6)进行配料
TiC0.5N0.5+1.125Si+0.625B4C=TiB2+1.125SiC+0.5BN (6)
获得样品相组成(体积含量)为44.0%TiB2-40.3%SiC-15.7%BN。
以丙酮(纯度>99%)为溶剂,3Y-TZP球为混料介质,将称量好的粉体混合并利用混料机进行混料,混料速度为30-100rpm。混合12-36小时后,将所得浆料通过真空旋转蒸的方式发在60-85℃烘干。经过烘干后的粉体破碎并过筛后倒入石墨模具中,利用放电等离子体烧结设备的对其进行压力烧结,整个过程在真空下进行。
烧结过程包含如下步骤:室温至700℃,升温速度为100℃/min,施加在样品上的压力为5MPa。在700℃保温1min后在1min内将压力升至60MPa。从700℃至1850℃,升温速度为100℃/min,压力为60MPa。在1850℃保温5min后,将压力降低至5MPa并停止加热,样品随炉冷却至室温。
所得样品维氏硬度为21-23GPa,弹性模量为420-430GPa,三点弯曲强度为630-810MPa,应变容限为1.5-1.9。
实施例7
以TiC0.1N0.9(粒径为5-20μm),碳化硼粉(粒径为1-1.5μm)和硅粉(粒径为1-5μm)为原料,按照方程式(7)进行配料
TiC0.1N0.9+0.825Si+0.725B4C=TiB2+0.825SiC+0.9BN (7)
获得样品相组成(体积含量)为43.2%TiB2-29%SiC-27.8%BN。
以丙酮(纯度>99%)为溶剂,3Y-TZP球为混料介质,将称量好的粉体混合并利用混料机进行混料,混料速度为30-100rpm。混合12-36小时后,将所得浆料通过真空旋转蒸的方式发在60-85℃烘干。经过烘干后的粉体破碎并过筛后倒入石墨模具中,利用常规热压烧结设备对其进行烧结。整个过程在真空下进行,且烧结过程中包含如下步骤:从室温至1850℃,升温速度为10℃/min,施加在样品上的压力为30MPa。在1850℃保温60min后,将压力撤销并停止加热,样品随炉冷却至室温。所得样品的XRD见图5。
所得样品维氏硬度为14-18GPa,弹性模量为365-376GPa,三点弯曲强度为493-670MPa,应变容限为1.4-1.8。
综上所述,利用TiCN为原料,通过其与硼和碳化硼的硼化反应,可以在较低的烧结温度,不明显降低材料强度和硬度的基础上,获得低弹性模量,高应变容限的TiB2基纳米复相陶瓷。
本发明的保护范围并不限于上述的实施例,显然,本领域的技术人员可以对本发明进行各种改动和变形而不脱离本发明的范围和精神。倘若这些改动和变形属于本发明权利要求及其等同技术的范围内,则本发明的意图也包含这些改动和变形在内。

Claims (6)

1.一种高强度、高硬度且低模量硼化钛纳米复相陶瓷的制备方法,其特征在于:采用市售的TiCxN1-x、B、B4C和Si粉体为原料,根据下列化学反应方程式进行粉体的配比:
TiCxN1-x+(3x+3)B=TiB2+xB4C+(1-x)BN (1)或
TiCxN1-x+(0.75+0.75x)Si+(0.75-0.25x)B4C=TiB2+(0.75+0.75x)SiC+(1-x)BN (2)
将原料粉体混料、干燥、过筛后利用热压烧结或放电等离子体实现其致密化,得到所需复相陶瓷;
所述参数x的取值范围为:0.05≤x≤0.95,通过改变参数x的值,在一定范围内改变所制备陶瓷中BN的含量,并对其微结构和性能进行调控。
2.如权利要求1所述的一种高强度、高硬度且低模量硼化钛纳米复相陶瓷的制备方法,其特征在于,具体包括如下步骤:
步骤1、混料:以市售TiCxN1-x、B、B4C和Si粉为原料,其中碳化硼和硼粉的平均粒径小于5μm,TiCxN1-x和Si粉的平均粒径小于20μm,各种粉体的纯度均大于97%;将各种原料粉体按设计的反应方程的配比进行称量,配料,以丙酮为溶剂,3mol%氧化钇稳定的氧化锆球为混料介质,进行混料,混合后所得浆料通过旋转蒸发烘干,破碎过筛后得到混合均匀的粉料;
步骤2、烧结:根据需要的样品厚度,计算所需粉体的重量,将过筛后的粉体倒入石墨模具中,在热压烧结或放电等离子体烧结的环境下对其进行烧结,烧结环境为真空或流动的氩气气氛,通过改变烧结温度、保温时间,加载压力,升温速度实现复相陶瓷的致密化和性能优化。
3.如权利要求2所述的一种高强度、高硬度且低模量硼化钛纳米复相陶瓷的制备方法,其特征在于,所述步骤2中烧结温度范围为1650℃-2000℃。
4.如权利要求2所述的一种高强度、高硬度且低模量硼化钛纳米复相陶瓷的制备方法,其特征在于,所述步骤2中保温时间范围为5-120min。
5.如权利要求2所述的一种高强度、高硬度且低模量硼化钛纳米复相陶瓷的制备方法,其特征在于,所述步骤2中加载压力范围为5-75Mpa。
6.如权利要求2所述的一种高强度、高硬度且低模量硼化钛纳米复相陶瓷的制备方法,其特征在于,所述步骤2中升温速度范围为10-100℃/min。
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