CN111865256B - Acoustic wave resonator and preparation method thereof - Google Patents
Acoustic wave resonator and preparation method thereof Download PDFInfo
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- CN111865256B CN111865256B CN202010719045.XA CN202010719045A CN111865256B CN 111865256 B CN111865256 B CN 111865256B CN 202010719045 A CN202010719045 A CN 202010719045A CN 111865256 B CN111865256 B CN 111865256B
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- 238000002360 preparation method Methods 0.000 title claims abstract description 23
- PBCFLUZVCVVTBY-UHFFFAOYSA-N tantalum pentoxide Inorganic materials O=[Ta](=O)O[Ta](=O)=O PBCFLUZVCVVTBY-UHFFFAOYSA-N 0.000 claims abstract description 52
- 238000000034 method Methods 0.000 claims abstract description 43
- 229910021426 porous silicon Inorganic materials 0.000 claims abstract description 29
- 239000000758 substrate Substances 0.000 claims abstract description 29
- 150000002500 ions Chemical class 0.000 claims abstract description 21
- 230000008569 process Effects 0.000 claims abstract description 16
- 238000000151 deposition Methods 0.000 claims abstract description 15
- 235000019687 Lamb Nutrition 0.000 claims abstract description 12
- 238000010438 heat treatment Methods 0.000 claims abstract description 8
- 238000001465 metallisation Methods 0.000 claims abstract description 4
- 239000010408 film Substances 0.000 claims description 33
- 238000004519 manufacturing process Methods 0.000 claims description 10
- ZKATWMILCYLAPD-UHFFFAOYSA-N niobium pentoxide Inorganic materials O=[Nb](=O)O[Nb](=O)=O ZKATWMILCYLAPD-UHFFFAOYSA-N 0.000 claims description 9
- 230000008021 deposition Effects 0.000 claims description 8
- 239000010409 thin film Substances 0.000 claims description 8
- 229910004546 TaF5 Inorganic materials 0.000 claims description 6
- 230000003746 surface roughness Effects 0.000 claims description 6
- 125000001153 fluoro group Chemical group F* 0.000 claims description 5
- 239000011148 porous material Substances 0.000 claims description 5
- 238000000227 grinding Methods 0.000 claims description 4
- 239000000463 material Substances 0.000 claims description 4
- 238000005530 etching Methods 0.000 claims description 3
- 238000010897 surface acoustic wave method Methods 0.000 description 5
- 229910019787 NbF5 Inorganic materials 0.000 description 3
- 238000004891 communication Methods 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 229920002120 photoresistant polymer Polymers 0.000 description 3
- 238000009835 boiling Methods 0.000 description 2
- 230000008859 change Effects 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 2
- 238000002513 implantation Methods 0.000 description 2
- 230000006872 improvement Effects 0.000 description 2
- 238000005468 ion implantation Methods 0.000 description 2
- 230000001376 precipitating effect Effects 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- AOLPZAHRYHXPLR-UHFFFAOYSA-I pentafluoroniobium Chemical compound F[Nb](F)(F)(F)F AOLPZAHRYHXPLR-UHFFFAOYSA-I 0.000 description 1
- 230000000750 progressive effect Effects 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- YRGLXIVYESZPLQ-UHFFFAOYSA-I tantalum pentafluoride Chemical compound F[Ta](F)(F)(F)F YRGLXIVYESZPLQ-UHFFFAOYSA-I 0.000 description 1
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/15—Constructional features of resonators consisting of piezoelectric or electrostrictive material
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/02—Details
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/46—Filters
- H03H9/54—Filters comprising resonators of piezoelectric or electrostrictive material
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- Physics & Mathematics (AREA)
- Acoustics & Sound (AREA)
- Piezo-Electric Or Mechanical Vibrators, Or Delay Or Filter Circuits (AREA)
- Surface Acoustic Wave Elements And Circuit Networks Thereof (AREA)
Abstract
The invention relates to an acoustic wave resonator and a preparation method thereof, wherein the method comprises the following steps: providing a porous silicon substrate, depositing Ta on the upper layer of the porous silicon substrate2O5A dielectric layer; to Ta2O5Planarizing the dielectric layer and applying a planarizing film on Ta2O5Injecting ions into a target area of the dielectric layer; providing a piezoelectric layer, a counter-piezoelectric layer and/or Ta2O5Bonding the dielectric layer after metallization to form a bonding structure; thinning the piezoelectric layer, and forming a piezoelectric film layer on the upper layer of the first electrode layer; heating the bonded structure to convert Ta2O5The target area of the dielectric layer becomes a cavity; and depositing a second electrode layer on the upper layer of the piezoelectric film layer to finish the preparation of the acoustic wave resonator. The invention provides a simple method for forming a cavity under a piezoelectric film, which is used for preparing a film bulk acoustic resonator and a lamb wave resonator and reduces the preparation cost and the process difficulty of the two resonators.
Description
Technical Field
The invention relates to the field of resonators, in particular to an acoustic wave resonator and a preparation method thereof.
Background
Acoustic resonators are widely used in the preparation of sensors, communication filters. As communication is developed towards high frequency, the frequency is higher, and the preparation of the filter with larger bandwidth will be paid extensive attention. The common surface acoustic wave filter in traditional communication has limited maximum frequency due to the improvement of resonant frequency caused by the lower wave speed of surface acoustic wave and the size of interdigital electrode, and the high frequency surface acoustic wave resonator is difficult to design and expensive in cost. Therefore, Film Bulk Acoustic Resonators (FBARs) have received much attention in high frequency filter applications. In the film bulk acoustic resonator, in order to enable bulk acoustic waves to form resonance in the piezoelectric layer, a cavity needs to be formed below the film layer or an acoustic Bragg reflection layer needs to be prepared so that acoustic waves do not transmit and leak to the substrate, resonance is formed in the piezoelectric layer, the preparation difficulty of the film bulk acoustic resonator is increased due to the preparation of the cavity structure, and therefore the preparation cost of the film bulk acoustic resonator is high.
In addition, lamb wave resonators appearing in recent years are receiving much attention because they can produce high-frequency and wide-bandwidth acoustic filters using plate wave modes having a relatively high acoustic velocity and a relatively large electromechanical coupling coefficient in a piezoelectric thin plate. The method can combine the advantages of the bulk acoustic wave resonator and the surface acoustic wave resonator, can define the resonant frequency by utilizing the interdigital electrode like the surface acoustic wave resonator, and has the high-frequency characteristic of the bulk acoustic wave resonator. However, the method needs to define the interdigital electrode and also needs to form a cavity structure under the piezoelectric film like a bulk acoustic wave resonator, so that the preparation process is more complicated, and the practical application is limited to a certain extent.
The existing method for forming a cavity structure below a piezoelectric film is to pre-arrange a sacrificial layer below the piezoelectric film and then open a hole to corrode the sacrificial layer after the device is manufactured, and the method is complex. The process difficulty is high.
Disclosure of Invention
The technical problem to be solved by the invention is to provide a simple method for forming a cavity under a piezoelectric film, which can be used for preparing a film bulk acoustic resonator and a lamb wave resonator and reducing the preparation cost of the two resonators.
In order to solve the technical problem, the invention discloses an acoustic wave resonator and a preparation method thereof. The specific technology is as follows:
in a first aspect, the present invention discloses a method for manufacturing an acoustic wave resonator, the method comprising:
providing a porous silicon substrate, in said porous regionUpper layer deposition of Ta on silicon substrate2O5A dielectric layer;
to the Ta2O5Planarizing the dielectric layer and applying a planarizing film to the Ta2O5Injecting ions into a target area of the dielectric layer;
providing a piezoelectric layer, applying a voltage to the piezoelectric layer and/or the Ta2O5Bonding the dielectric layer after metallization to form Ta from bottom to top2O5A bonding structure of the dielectric layer, the first electrode layer and the piezoelectric layer;
thinning the piezoelectric layer, and forming a piezoelectric film layer on the upper layer of the first electrode layer;
heating the bonded structure to convert the Ta2O5The target area of the dielectric layer becomes a cavity;
and depositing a second electrode layer on the upper layer of the piezoelectric film layer to finish the preparation of the acoustic wave resonator.
Further, said is at said Ta2O5The step of implanting ions into the target area of the dielectric layer comprises the following steps:
selecting F ion as implantation ion, implanting F ion in Ta2O5The content of F atoms in the target region of the dielectric layer is greater than 30 at%.
Further, thinning the piezoelectric layer comprises:
and thinning the piezoelectric layer by adopting a Smart-Cut process or a grinding back thinning process.
Further, the heating the bonded structure to convert the Ta2O5The target region of the dielectric layer becoming a cavity includes:
heating the bonded structure at a temperature above 230 ℃, said Ta2O5Ta of target region of dielectric layer2O5TaF converted to the gaseous state5Said gaseous TaF5And precipitating along the pores of the porous silicon substrate so as to change the target area into a cavity.
Further, the method further comprises:
and carrying out pattern etching on the second electrode layer to form an interdigital electrode structure, and preparing the lamb wave resonator.
In a second aspect, the invention discloses an acoustic wave resonator, which is prepared by the preparation method of the first aspect, and the acoustic wave resonator comprises, from bottom to top:
a porous silicon substrate;
Ta2O5dielectric layer of said Ta2O5A dielectric layer deposited on the upper layer of the porous silicon substrate, the Ta2O5A target area in the dielectric layer is a cavity structure;
a first electrode layer located at the Ta2O5The dielectric layer and the piezoelectric film layer;
a piezoelectric film layer obtained by thinning a piezoelectric layer, and Ta2O5The dielectric layer and the first electrode layer form a bonding structure;
a second electrode layer deposited over the piezoelectric thin film layer.
Further, the porosity of the porous silicon substrate ranges from 25% to 75%.
Further, said Ta2O5The deposition thickness of the dielectric layer ranges from 50nm to 500 nm.
Further, the dielectric layer deposited on the upper layer of the porous silicon substrate is Nb2O5A material.
Further, said Ta2O5The surface roughness of the dielectric layer is less than 1 nm.
By adopting the technical scheme, the acoustic wave resonator and the preparation method thereof have the following beneficial effects: the method disclosed by the invention provides a simple method for forming the cavity under the piezoelectric film, can be used for preparing the film bulk acoustic resonator and the lamb wave resonator, further reduces the preparation cost of the two resonators and reduces the process difficulty.
Drawings
In order to more clearly illustrate the technical solutions in the embodiments of the present invention, the drawings needed to be used in the description of the embodiments will be briefly introduced below, and it is obvious that the drawings in the following description are only some embodiments of the present invention, and it is obvious for those skilled in the art to obtain other drawings based on these drawings without creative efforts.
Fig. 1 is a schematic flow chart of a method for manufacturing an acoustic wave resonator according to the present invention;
fig. 2 is a schematic structural diagram of an acoustic wave resonator provided in the present invention;
fig. 3-8 are schematic structural diagrams of a method for manufacturing an acoustic wave resonator according to an embodiment of the present invention;
fig. 9 is a schematic structural diagram of a lamb wave resonator prepared by a method for preparing an acoustic wave resonator according to a second embodiment of the present invention;
in the figure, 1-porous silicon substrate, 2-Ta2O5The structure comprises a dielectric layer, 3-a target area or a cavity, 4-a first electrode layer, 5-a piezoelectric film layer, 6-a second electrode layer, 7-a photoresist pattern and 8-a piezoelectric layer.
Detailed Description
In order to make the technical solutions of the present invention better understood, the technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the drawings in the embodiments of the present invention, and it is obvious that the described embodiments are only a part of the embodiments of the present invention, and not all of the embodiments. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.
Reference herein to "one embodiment" or "an embodiment" means that a particular feature, structure, or characteristic may be included in at least one implementation of the invention. In describing the present invention, it is to be understood that the terms "first," "second," "third," and "fourth," etc. in the description and claims of the present invention and the above-described drawings are used for distinguishing between different objects and not for describing a particular order. Furthermore, the terms "include" and "have," as well as any variations thereof, are intended to cover non-exclusive inclusions. For example, a process, method, system, article, or apparatus that comprises a list of steps or elements is not limited to only those steps or elements listed, but may alternatively include other steps or elements not listed, or inherent to such process, method, article, or apparatus.
Fig. 1 is a flow chart of a method for manufacturing an acoustic wave resonator according to the present invention, which may include more or fewer steps based on conventional or non-inventive labor. The recited order of steps is only one of many steps in execution and does not represent a unique order of execution. Specifically, as shown in fig. 1, the method for manufacturing an acoustic wave resonator may include:
s110: providing a porous silicon substrate, depositing Ta on the upper layer of the porous silicon substrate2O5A dielectric layer.
Preferably, the porosity of the porous silicon substrate ranges from 25% to 75%. Said Ta2O5The deposition thickness of the dielectric layer ranges from 50nm to 500 nm.
In other possible embodiments, the dielectric layer deposited on the upper layer of the porous silicon substrate is Nb2O5The same technical effect can be achieved by using the material.
S120: to the Ta2O5Planarizing the dielectric layer and applying a planarizing film to the Ta2O5And implanting ions into the target area of the dielectric layer.
In some possible embodiments, the Ta is2O5The step of implanting ions into the target area of the dielectric layer comprises the following steps:
selecting F ion as implantation ion, implanting F ion in Ta2O5The content of F atoms in the target region of the dielectric layer is greater than 30 at%.
Further, after planarization, the Ta2O5The surface roughness of the dielectric layer is less than 1 nm.
S130: providing a piezoelectric layer, applying a voltage to the piezoelectric layer and/or the Ta2O5Bonding the dielectric layer after metallization to form Ta from bottom to top2O5And the bonding structure of the dielectric layer, the first electrode layer and the piezoelectric layer.
In some possible embodiments, a piezoelectric layer with a bottom electrode may be provided, with the dielectric layer and piezoelectric layer being directly bonded.
S140: and thinning the piezoelectric layer, wherein a piezoelectric film layer is formed on the upper layer of the first electrode layer.
In some possible embodiments, said thinning said piezoelectric layer comprises:
and thinning the piezoelectric layer by adopting a Smart-Cut process or a grinding back thinning process.
S150: heating the bonded structure to convert the Ta2O5The target area of the dielectric layer becomes a cavity.
Heating the bonded structure to convert the Ta2O5The target region of the dielectric layer becoming a cavity includes:
in some possible embodiments, the bonded structure, the Ta, is heated to a temperature above 230 ℃2O5Ta of target region of dielectric layer2O5TaF converted to the gaseous state5Said gaseous TaF5And precipitating along the pores of the porous silicon substrate so as to change the target area into a cavity.
S160: and depositing a second electrode layer on the upper layer of the piezoelectric film layer to finish the preparation of the acoustic wave resonator.
Further, the method further comprises:
and carrying out pattern etching on the second electrode layer to form an interdigital electrode structure, and preparing the lamb wave resonator.
The method disclosed by the invention provides a simple method for forming the cavity under the piezoelectric film, can be used for preparing the film bulk acoustic resonator and the lamb wave resonator, further reduces the preparation cost of the two resonators and reduces the process difficulty.
The invention actually provides an acoustic wave resonator, which is prepared according to the preparation method of the acoustic wave resonator disclosed by the invention, as shown in figure 2, the acoustic wave resonator comprises:
a porous silicon substrate 1;
Ta2O5 dielectric layer 2, said Ta2O5A dielectric layer deposited on the upper layer of the porous silicon substrate, the Ta2O5 A target area 3 in the dielectric layer 2 is a cavity structure;
a first electrode layer 4, the first electrode layer 4 being located at the Ta2O5The dielectric layer 2 and the piezoelectric film layer 5;
a piezoelectric film layer 5, the piezoelectric film layer 5 is obtained by thinning a piezoelectric layer 8, and Ta2O5The dielectric layer 2 and the first electrode layer 4 form a bonding structure;
a second electrode layer 6, said second electrode layer 6 being deposited on said piezoelectric thin film layer 5.
Preferably, the porosity of the porous silicon substrate ranges from 25% to 75%.
Preferably, said Ta2O5The deposition thickness of the dielectric layer ranges from 50nm to 500 nm.
Preferably, the dielectric layer deposited on the upper layer of the porous silicon substrate is Nb2O5A material.
Preferably, said Ta2O5The surface roughness of the dielectric layer is less than 1 nm.
The present invention will be described in further detail with reference to examples.
Example one
The method for manufacturing the acoustic wave resonator of the embodiment may include the following steps:
step 1: referring to FIG. 3, Ta is deposited on a porous silicon substrate 1 having a porosity of 50%2O5Dielectric layer 2, and Ta2O5The dielectric layer 2 is flattened to ensure that the surface roughness is less than 1nm, and Ta2O5The deposition thickness of the dielectric layer ranges from 50nm to 500 nm.
Step 2: referring to fig. 4, through a photoresist commonly used in semiconductorsThe pattern 7 is used to select the target region 3 for Ta2O5The dielectric layer 2 is ion-implanted into the target region 3, the ion-implanted species is F ion, and Ta containing F ion is formed2O5A dielectric layer 2 implanted with F ions in the Ta2O5The target region 3 of the dielectric layer has a content of F atoms greater than 30 at%.
And step 3: referring to fig. 5, the piezoelectric layer 8 with the first electrode layer 4 is provided and bonded.
And 4, step 4: referring to fig. 6, the piezoelectric layer 8 is thinned using a Smart-Cut process to form the piezoelectric thin film layer 5.
And 5: referring to FIG. 7, the bonded structure is heated at 230 deg.C to bring Ta2O5Conversion to TaF5. Due to TaF5Has a boiling point of 229.5 ℃ so that TaF5Will be converted into gas and will be separated out along the pores of the porous silicon to form a cavity 3 under the piezoelectric thin film layer 5.
Step 6: referring to fig. 8, a second electrode layer 6 is deposited on the piezoelectric thin film layer 5, completing the fabrication of the acoustic wave resonator.
Example two
The method for preparing the acoustic wave resonator of the embodiment can be used for preparing a lamb wave resonator, and the method can comprise the following steps:
step 1: deposition of Nb on a porous silicon substrate 1 with a porosity of 45%2O5Dielectric layer 2, and pair Nb2O5Flattening the dielectric layer 2 to make the surface roughness less than 1nm, and Nb2O5The deposition thickness of the dielectric layer ranges from 50nm to 500 nm.
Step 2: selection of the target area 3 by means of a photoresist pattern 7 commonly used in semiconductors for Nb2O5The dielectric layer 2 is subjected to ion implantation of a target region 3, the ion implantation type is F ion, and Nb containing F ion is formed2O5Dielectric layer 2, implanted with F ions in Nb2O5The target region 3 of the dielectric layer has a content of F atoms greater than 30 at%.
And step 3: the piezoelectric layer 8 with the first electrode layer 4 is provided and bonded.
And 4, step 4: and thinning the piezoelectric layer 8 by adopting a grinding back thinning process to form the piezoelectric film layer 5.
And 5: heating the bonded structure at 237 ℃ to form Nb2O5Conversion to NbF5. Due to NbF5Has a boiling point of 236 ℃ so that NbF5Will be converted into gas and will be separated out along the pores of the porous silicon to form a cavity 3 under the piezoelectric thin film layer 5.
Step 6: a second electrode layer 6 is deposited on the piezoelectric thin film layer 5.
And 7: referring to fig. 9, the second electrode layer 6 is patterned to form an interdigital electrode structure, and a lamb wave resonator is prepared.
The operation steps of the embodiment of the invention further reduce the preparation cost of the film bulk acoustic resonator and the lamb wave resonator, and reduce the process difficulty.
It should be noted that: the precedence order of the above embodiments of the present invention is only for description, and does not represent the merits of the embodiments. And specific embodiments thereof have been described above. Other embodiments are within the scope of the following claims. In some cases, the actions or steps recited in the claims may be performed in a different order than in the embodiments and still achieve desirable results. In addition, the processes depicted in the accompanying figures do not necessarily require the particular order shown, or sequential order, to achieve desirable results.
The embodiments in the present specification are described in a progressive manner, and the same and similar parts among the embodiments are referred to each other, and each embodiment focuses on the differences from the other embodiments.
The above description is only for the purpose of illustrating the preferred embodiments of the present invention and is not to be construed as limiting the invention, and any modifications, equivalents, improvements and the like that fall within the spirit and principle of the present invention are intended to be included therein.
Claims (8)
1. A method of manufacturing an acoustic wave resonator, the method comprising:
providing a porous silicon substrate, depositing Ta on the upper layer of the porous silicon substrate2O5A dielectric layer;
to the Ta2O5Planarizing the dielectric layer and applying a planarizing film to the Ta2O5Implanting ions into a target region of the dielectric layer, wherein F ions are selected as implanted ions, and the F ions are implanted into the Ta2O5The content of F atoms in the target region of the dielectric layer is greater than 30 at%;
providing a piezoelectric layer, applying a voltage to the piezoelectric layer and/or the Ta2O5Bonding the dielectric layer after metallization to form Ta from bottom to top2O5A bonding structure of the dielectric layer, the first electrode layer and the piezoelectric layer;
thinning the piezoelectric layer, and forming a piezoelectric film layer on the upper layer of the first electrode layer;
heating the bonded structure at a temperature above 230 ℃, said Ta2O5Ta of target region of dielectric layer2O5TaF converted to the gaseous state5Said gaseous TaF5Precipitating along pores of the porous silicon substrate, wherein the target area becomes a cavity;
and depositing a second electrode layer on the upper layer of the piezoelectric film layer to finish the preparation of the acoustic wave resonator.
2. The method according to claim 1, wherein the thinning the piezoelectric layer comprises:
and thinning the piezoelectric layer by adopting a Smart-Cut process or a grinding back thinning process.
3. The method of manufacturing an acoustic wave resonator according to claim 1, further comprising:
and carrying out pattern etching on the second electrode layer to form an interdigital electrode structure, and preparing the lamb wave resonator.
4. An acoustic resonator, characterized by being produced by the production method of any one of claims 1 to 3, comprising, from bottom to top:
a porous silicon substrate;
Ta2O5dielectric layer of said Ta2O5A dielectric layer deposited on the upper layer of the porous silicon substrate, the Ta2O5A target area in the dielectric layer is a cavity structure;
a first electrode layer located at the Ta2O5The dielectric layer and the piezoelectric film layer;
a piezoelectric film layer obtained by thinning a piezoelectric layer, and Ta2O5The dielectric layer and the first electrode layer form a bonding structure;
a second electrode layer deposited over the piezoelectric thin film layer.
5. The acoustic resonator according to claim 4, wherein the porous silicon substrate has a porosity in the range of 25% to 75%.
6. The acoustic resonator according to claim 4, wherein said Ta2O5The deposition thickness of the dielectric layer ranges from 50nm to 500 nm.
7. The acoustic resonator according to claim 4, wherein the dielectric layer deposited on the upper layer of the porous silicon substrate is Nb2O5A material.
8. The acoustic resonator according to claim 4, wherein said Ta2O5The surface roughness of the dielectric layer is less than 1 nm.
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