CN111865220A - Quartz circuit for improving heat dissipation of terahertz frequency multiplier - Google Patents
Quartz circuit for improving heat dissipation of terahertz frequency multiplier Download PDFInfo
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- CN111865220A CN111865220A CN202010732286.8A CN202010732286A CN111865220A CN 111865220 A CN111865220 A CN 111865220A CN 202010732286 A CN202010732286 A CN 202010732286A CN 111865220 A CN111865220 A CN 111865220A
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- frequency
- diode
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- 239000010453 quartz Substances 0.000 title claims abstract description 64
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 title claims abstract description 64
- 230000017525 heat dissipation Effects 0.000 title claims abstract description 23
- 239000000758 substrate Substances 0.000 claims abstract description 22
- 238000000034 method Methods 0.000 claims abstract description 7
- 238000005530 etching Methods 0.000 claims description 5
- 239000000853 adhesive Substances 0.000 claims description 4
- 230000001070 adhesive effect Effects 0.000 claims description 4
- 239000003990 capacitor Substances 0.000 claims description 4
- 238000003466 welding Methods 0.000 claims description 2
- 230000005540 biological transmission Effects 0.000 description 3
- 238000010586 diagram Methods 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 239000011148 porous material Substances 0.000 description 1
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03B—GENERATION OF OSCILLATIONS, DIRECTLY OR BY FREQUENCY-CHANGING, BY CIRCUITS EMPLOYING ACTIVE ELEMENTS WHICH OPERATE IN A NON-SWITCHING MANNER; GENERATION OF NOISE BY SUCH CIRCUITS
- H03B19/00—Generation of oscillations by non-regenerative frequency multiplication or division of a signal from a separate source
- H03B19/16—Generation of oscillations by non-regenerative frequency multiplication or division of a signal from a separate source using uncontrolled rectifying devices, e.g. rectifying diodes or Schottky diodes
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- Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
Abstract
The invention discloses a quartz circuit for improving heat dissipation of a terahertz frequency multiplier, and relates to the technical field of frequency multiplier circuits. The quartz circuit comprises a quartz substrate, a frequency doubling circuit of a terahertz frequency band is arranged on the front side of the quartz substrate, the frequency doubling circuit comprises a Schottky frequency doubling diode, a plurality of micropore structures are formed on the back side of a quartz base corresponding to the Schottky frequency doubling diode, and the micropore structures are used for emitting heat generated by the Schottky frequency doubling diode. The quartz circuit is based on the existing commonly used quartz circuit and is compatible with the existing frequency multiplier circuit; the microstructure is manufactured on the quartz circuit, and the process is simple; the heat dissipation of the terahertz frequency multiplier can be effectively improved, and the heat dissipation efficiency and the frequency multiplication efficiency of the frequency multiplier are improved.
Description
Technical Field
The invention relates to the technical field of frequency doubling circuits, in particular to a quartz circuit for improving heat dissipation of a terahertz frequency multiplier.
Background
Terahertz (THz) waves refer to electromagnetic waves having a frequency in the range of 0.3-3THz, and terahertz waves in a broad sense refer to 100GHz to 10THz, where 1THz =1000 GHz. Terahertz waves have wide application prospects in the fields of high-speed wireless communication, radars, human body safety detection and the like, and the transmission circuit is mainly based on a frequency multiplier manufactured by a Schottky frequency doubling diode to realize frequency doubling of low-frequency millimeter wave signals to a terahertz frequency band in order to realize transmission and reception of microwave, millimeter wave and terahertz frequency band signals without separating from various microwave, millimeter wave and terahertz transmission devices.
At present, frequency doubling circuits for millimeter wave and terahertz frequency bands mainly have two forms, namely a balanced type frequency doubling structure and an unbalanced type frequency doubling structure. In the balanced circuit, one half of the anode of the Schottky diode is opened, and the other half of the anode of the Schottky diode is closed; in the unbalanced circuit, all anodes of the Schottky diodes are simultaneously opened or closed to synchronously work. In the terahertz frequency tripling structure, a balanced frequency doubling scheme is mostly adopted, wherein the middle of a schottky diode is welded on a quartz circuit, and two ends of the schottky diode are grounded through a conductive adhesive directly at one end and an on-chip capacitor at the other end.
The terahertz frequency low-end (100 GHz-600 GHz) frequency multiplier generally adopts a hybrid integration form, and because the frequency multiplier needs to work under a larger driving power to obtain the improvement of frequency multiplication frequency power, the efficiency of the frequency multiplier is generally about 20%, namely 80% of energy is dissipated, so that the terahertz frequency multiplier is more and more important in thermal management. At present, a frequency multiplier in a terahertz frequency band is mainly a hybrid integrated circuit based on a quartz circuit substrate, because the dielectric coefficient of a quartz circuit is small, and meanwhile, the loss coefficient of the quartz circuit in the terahertz frequency band is small, but the heat dissipation performance of the quartz circuit is poor, after the frequency multiplier based on the quartz circuit works for several minutes, the heating condition of the frequency multiplier can occur, and due to the temperature rise of the frequency multiplier, the frequency multiplier can be further fed back to the frequency multiplier circuit, so that the frequency multiplication efficiency is reduced.
Disclosure of Invention
The invention aims to solve the technical problem of how to provide a quartz circuit which can effectively improve the heat dissipation of a Schottky frequency doubling diode and improve the frequency doubling efficiency of the Schottky frequency doubling diode.
In order to solve the technical problems, the technical scheme adopted by the invention is as follows: the utility model provides a quartz circuit, includes the quartz substrate, the front of quartz substrate is provided with the frequency doubling circuit of terahertz frequency channel now, frequency doubling circuit includes schottky frequency doubling diode, its characterized in that: and a plurality of micropore structures are formed on the back of the quartz base corresponding to the Schottky frequency doubling diode, and the micropore structures are used for dissipating heat generated by the Schottky frequency doubling diode.
The further technical scheme is as follows: the width of the micropore structure is larger than that of the Schottky frequency doubling diode, and the length of the micropore structure is consistent with that of the quartz substrate.
The further technical scheme is as follows: the Schottky frequency doubling diode is fixed on the front surface of the quartz substrate in a flip-chip welding mode.
Preferably, the thickness of the quartz substrate is 50 micrometers.
Preferably, the microporous structure is formed by an etching process.
Preferably, the depth of the micropores is 30 μm.
The further technical scheme is as follows: the working form of the frequency doubling circuit has two forms, one is balanced type frequency doubling, and the other is an unbalanced type frequency doubling structure; in the balanced circuit, one half of the anode of the Schottky diode is opened, and the other half of the anode of the Schottky diode is closed; in the unbalanced circuit, all anodes of the Schottky diodes are simultaneously opened or closed to synchronously work.
The further technical scheme is as follows: in the terahertz frequency tripling structure, balanced frequency doubling is adopted, wherein the middle of a Schottky frequency doubling diode is welded on a quartz circuit, two ends of the Schottky diode are directly grounded through a conductive adhesive, and the other end of the Schottky diode is grounded through an on-chip capacitor.
Adopt the produced beneficial effect of above-mentioned technical scheme to lie in: according to the quartz circuit, quartz micropores are etched on the quartz substrate below the Schottky frequency doubling diode, and heat dissipation of the Schottky frequency doubling diode can be effectively improved by etching a plurality of micropores; the microstructure is manufactured on the quartz circuit, and the process is simple; the heat dissipation of the terahertz frequency multiplier can be effectively improved, and the heat dissipation efficiency and the frequency multiplication efficiency of the frequency multiplier are improved.
Drawings
The present invention will be described in further detail with reference to the accompanying drawings and specific embodiments.
FIG. 1 is a schematic diagram of a quartz circuit according to an embodiment of the present invention;
FIG. 2 is a schematic diagram of a portion of a quartz circuit according to an embodiment of the present invention;
wherein: 1. a quartz substrate; 2. a Schottky frequency doubling diode; 3. a microporous structure; 4. and (4) micro-pores.
Detailed Description
The technical solutions in the embodiments of the present invention are clearly and completely described below with reference to the drawings in the embodiments of the present invention, and it is obvious that the described embodiments are only a part of the embodiments of the present invention, and not all of the embodiments. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.
In the following description, numerous specific details are set forth in order to provide a thorough understanding of the present invention, but the present invention may be practiced in other ways than those specifically described and will be readily apparent to those of ordinary skill in the art without departing from the spirit of the present invention, and therefore the present invention is not limited to the specific embodiments disclosed below.
As shown in fig. 1-fig. 2, an embodiment of the present invention discloses a quartz circuit for improving heat dissipation of a terahertz frequency multiplier, including a quartz substrate 1, a frequency doubling circuit in a terahertz frequency band is disposed on a front surface of the quartz substrate 1, the frequency doubling circuit includes a schottky frequency doubling diode 2, the frequency doubling circuit may use a frequency doubling circuit in the prior art, and a specific circuit form thereof is not described herein again. The invention is different from the prior art in that: a plurality of micropore structures 3 are formed on the back of the quartz basic body 1 corresponding to the Schottky frequency doubling diode 2, and the micropore structures 3 are used for dissipating heat generated by the Schottky frequency doubling diode 2.
The further technical scheme is as follows: the width of the microporous structure 3 can be larger than that of the Schottky frequency doubling diode 2, and the length of the microporous structure 3 is consistent with that of the quartz substrate 1, so that the heat dissipation effect of the microporous structure is improved.
Further, as shown in fig. 2, the schottky frequency doubling diode 2 is fixed on the front surface of the quartz substrate 1 by flip-chip bonding. Preferably, the thickness of the quartz substrate 1 may be 50 μm, and it should be noted that the thickness of the quartz substrate 1 may be appropriately adjusted according to a quartz circuit.
Further, the microporous structure 3 is formed by an etching process, and it should be noted that the microporous structure 3 may also be manufactured by other processes, which are not described herein again; preferably, the depth of the micro-holes 4 may be 30 micrometers, and it should be noted that the depth of the micro-holes 4 may also be other values, which are not listed here.
Furthermore, the working form of the frequency doubling circuit has two forms, one is a balanced type frequency doubling structure, and the other is an unbalanced type frequency doubling structure; in the balanced circuit, one half of the anode of the Schottky diode is opened, and the other half of the anode of the Schottky diode is closed; in the unbalanced circuit, all anodes of the Schottky diodes are simultaneously opened or closed to synchronously work. In the terahertz frequency tripling structure, balanced frequency doubling is adopted, wherein the middle of a Schottky frequency doubling diode is welded on a quartz circuit, two ends of the Schottky diode are directly grounded through a conductive adhesive, and the other end of the Schottky diode is grounded through an on-chip capacitor.
In summary, the quartz circuit provided by the application etches quartz micropores on the quartz substrate below the schottky frequency doubling diode, and the heat dissipation of the schottky frequency doubling diode can be effectively improved by etching a plurality of micropores, and the quartz circuit is based on the existing commonly-used quartz circuit and is compatible with the existing frequency multiplier circuit; the microstructure is manufactured on the quartz circuit, and the process is simple; the heat dissipation of the terahertz frequency multiplier can be effectively improved, and the heat dissipation efficiency and the frequency multiplication efficiency of the frequency multiplier are improved.
Claims (8)
1. The utility model provides an improve radiating quartz circuit of terahertz frequency multiplier now, includes quartz substrate (1), the front of quartz substrate (1) is provided with the frequency doubling circuit of terahertz frequency channel now, frequency doubling circuit includes schottky frequency doubling diode (2), its characterized in that: the back of the quartz base (1) corresponding to the Schottky frequency doubling diode (2) is provided with a plurality of micropore structures (3), and the micropore structures (3) are used for dissipating heat generated by the Schottky frequency doubling diode (2).
2. The quartz circuit for improving the heat dissipation of the terahertz frequency multiplier according to claim 1, wherein: the width of the micropore structure (3) is larger than that of the Schottky frequency doubling diode (2), and the length of the micropore structure (3) is consistent with that of the quartz substrate (1).
3. The quartz circuit for improving the heat dissipation of the terahertz frequency multiplier according to claim 1, wherein: the Schottky frequency doubling diode (2) is fixed on the front surface of the quartz substrate (1) in a flip-chip welding mode.
4. The quartz circuit for improving the heat dissipation of the terahertz frequency multiplier according to claim 1, wherein: the thickness of the quartz substrate (1) is 50 micrometers.
5. The quartz circuit for improving the heat dissipation of the terahertz frequency multiplier according to claim 1, wherein: the microporous structure (3) is formed by an etching process.
6. The quartz circuit for improving the heat dissipation of the terahertz frequency multiplier according to claim 1, wherein: the depth of the micropores (4) is 30 microns.
7. The quartz circuit for improving the heat dissipation of the terahertz frequency multiplier according to claim 1, wherein: the working form of the frequency doubling circuit has two forms, one is balanced type frequency doubling, and the other is an unbalanced type frequency doubling structure; in the balanced circuit, one half of the anode of the Schottky diode is opened, and the other half of the anode of the Schottky diode is closed; in the unbalanced circuit, all anodes of the Schottky diodes are simultaneously opened or closed to synchronously work.
8. The quartz circuit for improving the heat dissipation of the terahertz frequency multiplier according to claim 7, wherein: in the terahertz frequency tripling structure, balanced frequency doubling is adopted, wherein the middle of a Schottky frequency doubling diode is welded on a quartz circuit, two ends of the Schottky diode are directly grounded through a conductive adhesive, and the other end of the Schottky diode is grounded through an on-chip capacitor.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202010732286.8A CN111865220A (en) | 2020-07-27 | 2020-07-27 | Quartz circuit for improving heat dissipation of terahertz frequency multiplier |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202010732286.8A CN111865220A (en) | 2020-07-27 | 2020-07-27 | Quartz circuit for improving heat dissipation of terahertz frequency multiplier |
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| Publication Number | Publication Date |
|---|---|
| CN111865220A true CN111865220A (en) | 2020-10-30 |
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| Application Number | Title | Priority Date | Filing Date |
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| CN202010732286.8A Pending CN111865220A (en) | 2020-07-27 | 2020-07-27 | Quartz circuit for improving heat dissipation of terahertz frequency multiplier |
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Citations (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5438212A (en) * | 1993-02-25 | 1995-08-01 | Mitsubishi Denki Kabushiki Kaisha | Semiconductor device with heat dissipation structure |
| CN103258843A (en) * | 2013-05-30 | 2013-08-21 | 中国电子科技集团公司第十三研究所 | Multi-hole substrate for terahertz Schottky diode |
| US20150056763A1 (en) * | 2013-08-22 | 2015-02-26 | Karl D. Hobart | Selective deposition of diamond in thermal vias |
| CN106026927A (en) * | 2016-07-29 | 2016-10-12 | 中国电子科技集团公司第十三研究所 | Terahertz double frequency unbalanced circuit with high power capacity |
| CN205883166U (en) * | 2016-07-29 | 2017-01-11 | 中国电子科技集团公司第十三研究所 | Terahertz of nai power is frequency tripling class balanced type frequency doubling circuit now |
| CN108598036A (en) * | 2018-06-26 | 2018-09-28 | 苏州汉骅半导体有限公司 | Buddha's warrior attendant ground mass gallium nitride device manufacturing method |
| CN109959853A (en) * | 2019-04-10 | 2019-07-02 | 嘉兴腓特烈太赫科技有限公司 | The method for screening 4 pipe balanced type Terahertz frequency triplers based on DC detecting |
| CN110045261A (en) * | 2019-04-10 | 2019-07-23 | 嘉兴腓特烈太赫科技有限公司 | The method for screening 6 pipe balanced type Terahertz frequency triplers based on DC detecting |
-
2020
- 2020-07-27 CN CN202010732286.8A patent/CN111865220A/en active Pending
Patent Citations (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5438212A (en) * | 1993-02-25 | 1995-08-01 | Mitsubishi Denki Kabushiki Kaisha | Semiconductor device with heat dissipation structure |
| CN103258843A (en) * | 2013-05-30 | 2013-08-21 | 中国电子科技集团公司第十三研究所 | Multi-hole substrate for terahertz Schottky diode |
| US20150056763A1 (en) * | 2013-08-22 | 2015-02-26 | Karl D. Hobart | Selective deposition of diamond in thermal vias |
| CN106026927A (en) * | 2016-07-29 | 2016-10-12 | 中国电子科技集团公司第十三研究所 | Terahertz double frequency unbalanced circuit with high power capacity |
| CN205883166U (en) * | 2016-07-29 | 2017-01-11 | 中国电子科技集团公司第十三研究所 | Terahertz of nai power is frequency tripling class balanced type frequency doubling circuit now |
| CN108598036A (en) * | 2018-06-26 | 2018-09-28 | 苏州汉骅半导体有限公司 | Buddha's warrior attendant ground mass gallium nitride device manufacturing method |
| CN109959853A (en) * | 2019-04-10 | 2019-07-02 | 嘉兴腓特烈太赫科技有限公司 | The method for screening 4 pipe balanced type Terahertz frequency triplers based on DC detecting |
| CN110045261A (en) * | 2019-04-10 | 2019-07-23 | 嘉兴腓特烈太赫科技有限公司 | The method for screening 6 pipe balanced type Terahertz frequency triplers based on DC detecting |
Non-Patent Citations (1)
| Title |
|---|
| 谢文青等: "0.2THz二倍频器研究", 《红外与激光工程》, vol. 48, no. 12, 17 April 2019 (2019-04-17), pages 171 - 174 * |
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