CN111864536A - Silicon-based quantum dot photonic crystal laser and processing method - Google Patents
Silicon-based quantum dot photonic crystal laser and processing method Download PDFInfo
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- H01S5/00—Semiconductor lasers
- H01S5/30—Structure or shape of the active region; Materials used for the active region
- H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
- H01S5/341—Structures having reduced dimensionality, e.g. quantum wires
- H01S5/3412—Structures having reduced dimensionality, e.g. quantum wires quantum box or quantum dash
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- H—ELECTRICITY
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- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/30—Structure or shape of the active region; Materials used for the active region
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/30—Structure or shape of the active region; Materials used for the active region
- H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
- H01S5/3403—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers having a strained layer structure in which the strain performs a special function, e.g. general strain effects, strain versus polarisation
- H01S5/3406—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers having a strained layer structure in which the strain performs a special function, e.g. general strain effects, strain versus polarisation including strain compensation
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- H—ELECTRICITY
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- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/30—Structure or shape of the active region; Materials used for the active region
- H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
- H01S5/343—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
- H01S5/34306—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser emitting light at a wavelength longer than 1000nm, e.g. InP based 1300 and 1500nm lasers
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- H—ELECTRICITY
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- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/30—Structure or shape of the active region; Materials used for the active region
- H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
- H01S5/343—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
- H01S5/34313—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser with a well layer having only As as V-compound, e.g. AlGaAs, InGaAs
Abstract
The invention provides a silicon-based quantum dot photonic crystal laser and a processing method thereof, wherein the laser structure comprises the following stacked layers in sequence: a silicon substrate layer, a defect suppression layer, a sacrificial layer, a light emitting layer, and a cap layer. The defect inhibiting layer is arranged on the silicon substrate layer and comprises a first quantum dot layer and a III-V group buffer layer which are alternately stacked, the first quantum dot layer is in contact with the silicon substrate layer, the III-V group buffer layer is in contact with the sacrificial layer, the sacrificial layer is of a hollow structure, the light emitting layer comprises a second quantum dot layer, a spacing layer and a coating layer which are alternately stacked, the spacing layer is in contact with the sacrificial layer and the coating layer, and the light emitting layer is of an air hole structure. The laser adopts the method that the quantum dot layer is grown on the silicon substrate layer to be used as the gain medium of the laser, thereby preparing the high-density integrated III-V group laser with silicon-based direct growth, and the laser has the characteristics of small volume, light weight and stable and reliable work.
Description
Technical Field
The invention relates to the technical field of optical communication lasers, in particular to a silicon-based quantum dot photonic crystal laser and a processing method thereof.
Background
Silicon photonics is a silicon-based optical communication technology. However, since silicon itself is an inorganic semiconductor material with an indirect band gap, the light emitting performance is much poorer than that of an inorganic semiconductor material with a direct band gap. Currently, silicon-based lasers are mainly silicon-based raman lasers, but the silicon-based raman lasers are weak in strength and high in requirements for manufacturing processes, and therefore, laser light sources on a silicon optical chip are usually externally coupled lasers, such as a waveguide type (FP) laser, a Distributed Feedback (DFB) laser, and a Vertical Cavity Surface (VCSEL) emitting laser. Direct bandgap inorganic semiconductor materials (such as InGaP, InAs, etc.) are commonly used as the active region light-emitting medium of inorganic semiconductor lasers. The lasers of silicon photonics chips are coupled into the silicon chips by means of alignment or bonding, however, such coupling increases the manufacturing cost of the lasers and the silicon chips. Moreover, the FP laser, DFB laser and VCSEL laser have larger device sizes, which is not favorable for large-area, high-density integrated silicon-based optical chips.
In order to solve the difficulty of silicon chip integrated lasers, a silicon-based laser is prepared by an epitaxial mode of silicon-based direct growth of III-V group luminescent materials, and the silicon-based laser is prepared by processing a silicon substrate, such as growing inorganic quantum dots or quantum wells on an off-cut silicon substrate, a patterned silicon substrate (V-groove Si) and a Si (001) crystal face substrate compatible with a CMOS (complementary metal oxide semiconductor) process to be used as a gain medium of the laser. Because of the mismatch between silicon and iii-v lattices, large difference in thermal conductivity, and the like, it is more challenging to directly grow iii-v light-emitting layers on Si (001) crystal planes compatible with CMOS processes compared to beveled silicon substrates and patterned silicon substrates. Although silicon-based FP lasers, silicon-based DFB lasers, etc. are currently being developed, such large-sized silicon-based lasers are not conducive to large-area, high-density integrated silicon photonics chips.
Disclosure of Invention
The invention aims to provide a silicon-based quantum dot photonic crystal laser and a processing method thereof so as to solve the problem that the conventional silicon-based laser is not beneficial to being manufactured in a large-area and high-density integrated silicon photonic chip.
In order to achieve the above object, the embodiment of the present invention adopts the following technical solutions, including:
a silicon-based quantum dot photonic crystal laser comprises a silicon substrate layer, a defect inhibiting layer, a sacrificial layer, a light emitting layer and a cover layer which are sequentially stacked:
the defect inhibiting layer is positioned on the silicon substrate layer and comprises a first quantum dot layer and a III-V buffer layer which are alternately stacked, the first quantum dot layer is contacted with the silicon substrate layer, and the III-V buffer layer is contacted with the sacrificial layer;
the sacrificial layer is of a hollow structure;
the light-emitting layer comprises second quantum dot layers, spacing layers and cladding layers which are alternately stacked, the spacing layers are in contact with the sacrificial layers and the cladding layers, and the light-emitting layer is of an air hole structure.
Further, the first quantum dot layer is an InAs quantum dot layer.
Further, the defect suppression layer includes 4 layers of the first quantum dot layer.
Further, the III-V buffer layer is a GaAs layer.
Furthermore, the thickness of the III-V group buffer layer in contact with the sacrificial layer ranges from 500nm to 700nm, and the thickness of the rest III-V group buffer layers ranges from 700nm to 900 nm.
Further, the sacrificial layer material is AlXGa1-XAs, wherein, the value range of X is 0.6-0.96.
Furthermore, the thickness of the sacrificial layer ranges from 600nm to 1000 nm.
Furthermore, the second quantum dot layer is an InAs quantum dot layer, and the spacing layer is a GaAs layer.
Furthermore, the light-emitting layer comprises 5 second quantum dot layers, and a spacing layer is arranged between the second quantum dot layers. Optionally, the spacer layer has a thickness of 50 nm.
Furthermore, a coating layer is grown on the outer layer of the structure formed by the second quantum dot layer and the spacing layer. Further, the coating layer is Al0.4The thickness of the GaAs layer ranges from 60nm to 100 nm.
Furthermore, the cover layer is positioned on the light-emitting layer, and the material of the cover layer is GaAs.
Furthermore, the thickness of the cover layer ranges from 10nm to 15 nm.
A processing method of a silicon-based quantum dot photonic crystal laser, which adopts the silicon-based quantum dot photonic crystal laser, comprises the following steps:
growing a defect suppression layer on the silicon substrate layer;
growing a sacrificial layer on the defect-inhibiting layer;
growing a luminescent layer and a cover layer on the sacrificial layer;
growing a silicon oxide layer on the cap layer;
coating electronic glue on the silicon oxide layer, and forming a first preset pattern on the electronic glue through electron beam exposure and development;
etching the silicon oxide layer by a dry method to form an etched surface with a smooth and flat surface;
forming a second predetermined pattern having air holes by dry etching the light emitting layer;
removing the electronic glue by dry etching;
removing the silicon oxide layer by wet etching;
the sacrificial layer is etched through the light emitting layer air holes by wet etching to form a hollow structure.
The invention has the beneficial effects that:
the quantum dot layer is grown on the silicon substrate layer and used as a gain medium of the laser, so that the three-five laser with silicon-based direct growth is prepared, the three-five laser is suitable for preparing large-area and high-density integrated lasers, and the three-five laser has the characteristics of small volume, light weight, stable and reliable work and the like.
Drawings
To more clearly illustrate the technical solutions of the embodiments of the present invention, the drawings that are required to be used in the embodiments will be briefly described below, and it should be understood that the following drawings only illustrate some embodiments of the present invention, and therefore should not be considered as limiting the scope of the present invention.
Fig. 1 is a schematic structural diagram of a silicon-based quantum dot photonic crystal laser according to an embodiment of the present invention;
fig. 2 is a schematic diagram of a three-dimensional structure of a silicon-based quantum dot photonic crystal laser according to an embodiment of the present invention;
fig. 3 is an electron microscope image of a fabricated silicon-based quantum dot photonic crystal laser provided by an embodiment of the present invention;
fig. 4 is a laser spectrum diagram of a silicon-based quantum dot photonic crystal laser according to an embodiment of the present invention.
Detailed Description
Various embodiments of the present invention will be described more fully hereinafter. The invention is capable of various embodiments and of modifications and variations therein. However, it should be understood that: there is no intention to limit various embodiments of the invention to the specific embodiments disclosed herein, but on the contrary, the intention is to cover all modifications, equivalents, and/or alternatives falling within the spirit and scope of various embodiments of the invention.
Hereinafter, the terms "includes" or "may include" used in various embodiments of the present invention indicate the presence of the disclosed functions, operations, or elements, and do not limit the addition of one or more functions, operations, or elements. Furthermore, as used in various embodiments of the present invention, the terms "comprises," "comprising," "includes," "including," "has," "having" and their derivatives are intended to mean that the specified features, numbers, steps, operations, elements, components, or combinations of the foregoing, are only meant to indicate that a particular feature, number, step, operation, element, component, or combination of the foregoing, and should not be construed as first excluding the existence of, or adding to the possibility of, one or more other features, numbers, steps, operations, elements, components, or combinations of the foregoing.
In various embodiments of the invention, the expression "or" at least one of a or/and B "includes any or all combinations of the words listed simultaneously. For example, the expression "a or B" or "at least one of a or/and B" may include a, may include B, or may include both a and B.
Expressions (such as "first", "second", and the like) used in various embodiments of the present invention may modify various constituent elements in various embodiments, but may not limit the respective constituent elements. For example, the above description does not limit the order and/or importance of the elements described. The foregoing description is for the purpose of distinguishing one element from another. For example, the first user device and the second user device indicate different user devices, although both are user devices. For example, a first element could be termed a second element, and, similarly, a second element could be termed a first element, without departing from the scope of various embodiments of the present invention.
It should be noted that: in the present invention, unless otherwise explicitly stated or defined, the terms "mounted," "connected," "fixed," and the like are to be construed broadly, e.g., as being fixedly connected, detachably connected, or integrally connected; can be mechanically or electrically connected; can be directly connected or indirectly connected through an intermediate medium; there may be communication between the interiors of the two elements. The specific meanings of the above terms in the present invention can be understood by those skilled in the art according to specific situations.
In the present invention, it should be understood by those skilled in the art that the terms indicating an orientation or a positional relationship herein are based on the orientations and the positional relationships shown in the drawings and are only for convenience of describing the present invention and simplifying the description, but do not indicate or imply that the device or the element referred to must have a specific orientation, be constructed in a specific orientation and operate, and thus, should not be construed as limiting the present invention.
The terminology used in the various embodiments of the invention is for the purpose of describing particular embodiments only and is not intended to be limiting of the various embodiments of the invention. As used herein, unless the context clearly dictates otherwise. Unless otherwise defined, all terms (including technical and scientific terms) used herein have the same meaning as commonly understood by one of ordinary skill in the art to which various embodiments of the present invention belong. The terms (such as those defined in commonly used dictionaries) should be interpreted as having a meaning that is consistent with their contextual meaning in the relevant art and will not be interpreted in an idealized or overly formal sense unless expressly so defined herein in various embodiments of the present invention.
Example one
The structure of the silicon-based photonic crystal laser shown in fig. 1 includes a silicon substrate layer 110, a defect suppression layer 120, a sacrificial layer 130, a light emitting layer 140 and a cap layer 150.
The silicon substrate layer 110 may provide electrical performance support and mechanical support for the overlying structures. In an embodiment of the present invention, a iii-v laser is fabricated on silicon substrate layer 110.
A defect suppression layer 120 is grown on the silicon substrate layer, the defect suppression layer 120 including first quantum dot layers, and a group iii-v buffer layer of a predetermined thickness between the two first quantum dot layers. Exemplarily, the iii-v buffer layer may be formed using GaAs. The predetermined thickness may be 700nm to 900 nm. The first quantum dot layer is in contact with the silicon substrate layer, the GaAs layer of the III-V group buffer layer is in contact with the sacrificial layer, and the thickness of the GaAs layer can be 500nm-700 nm.
It is appreciated that the defect suppression layer 120 may be used to reduce the defect density caused by lattice mismatch. The lattice mismatch refers to a mismatch phenomenon that occurs due to a difference in lattice constants of the substrate and the epitaxial layer (i.e., the light emitting layer). When a single crystal layer of another substance is grown on a single crystal substrate, stress is generated near a growth interface due to a difference in lattice constants of the two substances, thereby generating crystal defects, i.e., misfit dislocations. The lattice mismatch affects the epitaxial growth of the crystal, a large number of defects are generated in the epitaxial layer, and the performance and the service life of the device are affected to a certain extent. The defect inhibiting layer is made of a material similar to that of the light emitting layer, so that the difference of lattice constants of the substrate layer and the epitaxial layer can be reduced, the defect density of misfit dislocation caused by lattice mismatch is further reduced, and the optical characteristics of the light emitting layer can be directly influenced due to the defect density. In order to increase the gain factor and thermal conductivity of the light-emitting layer, the defect density of the light-emitting layer should be reduced as much as possible.
The sacrificial layer 130 is grown on the buffer layer, and the material of the sacrificial layer 130 may be Al exemplarilyXGa1-XAs, wherein, the value range of X is 0.6-0.96. In some embodiments, the thickness of the sacrificial layer 130 may be 600nm to 1000 nm. It will be appreciated that the sacrificial layer 130 may serve to separate the defect-inhibiting layer and the light-emitting layerAnd the function of protecting the underlying structure.
In addition, in the process of forming the cavity of the target mechanical structure, various target structural layers required by the structural material are firstly deposited on the sacrificial layer 130, and then the sacrificial layer is etched away by using a chemical etchant, so that the target structural member is not damaged, and then the upper cavity structure is obtained. In the embodiment of the present invention, a hydrofluoric acid solution or the like may be used as an etchant to selectively etch the sacrificial layer 130.
The light emitting layer 140, the light emitting layer 140 with InAs quantum band structure grown on the sacrificial layer 130 as a gain medium layer, exemplarily, the light emitting layer 140 includes a predetermined number of second quantum dot layers, and in some embodiments, the thickness of the second quantum dot layer formed by InAs quantum dots may be 6nm to 10 nm. A spacer layer is disposed between the second quantum dot layer structures, for example, a 50nm GaAs layer can be used as the spacer layer. Further, a cladding layer with a certain thickness is grown on the outer layer of the structure composed of the second quantum dot layer and the spacer layer, for example, the cladding layer is Al0.4The thickness of the GaAs layer can be 60nm-100 nm.
It will be appreciated that in this case, the light-emitting layer 140 is in contact with both the sacrificial layer and the cladding layer as a GaAs spacer layer. Al (Al)0.4The GaAs cladding layer, the second quantum dot layer and the GaAs spacing layer form a respective confinement heterojunction structure, and the special structure can form confinement of an optical field mode and increase confinement of electron holes. The density and number of InAs quantum dot layers in the light-emitting layer 140 affect the gain, laser threshold, laser power, etc. of the material. In some embodiments, the number of layers of the second quantum dot layer grown by the light emitting layer 140 is 5.
A cap layer 150 is also grown on the light emitting layer, and the cap layer 150 may be a GaAs layer with a thickness of, for example, 15nm to 20 nm. The cap layer 150 serves to prevent Al of the clad layer in the light emitting layer 1400.4And the GaAs is oxidized in the air to improve the service life of the device.
To facilitate understanding of the structure of the silicon-based quantum dot photonic crystal laser according to the embodiment of the present invention, for example, fig. 2 shows a schematic 3D structure of the silicon-based quantum dot photonic crystal laser, which includes a silicon substrate layer 210, a defect suppression layer 220, a sacrificial layer 230, a light emitting layer 240, and a cap layer 250. Illustratively, the defect suppression layer 220 includes 4 first quantum dot layers and 4 iii-v buffer layers stacked alternately, and may include, in order from bottom to top, a first quantum dot layer 221, a iii-v buffer layer 222, a first quantum dot layer 223, a iii-v buffer layer 224, a first quantum dot layer 225, a iii-v buffer layer 226, a first quantum dot layer 227, and a iii-v buffer layer 228.
Example two
The embodiment of the invention also provides a technological processing method of the photonic crystal laser, which comprises the following steps:
a method for processing a silicon-based quantum dot photonic crystal laser using the silicon-based quantum dot photonic crystal laser of embodiment 1, comprising:
growing a defect suppression layer 120 on the silicon substrate layer;
growing a sacrificial layer 130 on the defect-suppression layer 120;
growing a light emitting layer 140 and a cap layer 150 on the sacrificial layer 130;
growing a silicon oxide layer on the cap layer 150;
coating electronic glue on the silicon oxide layer, and forming a first preset pattern on the electronic glue through electron beam exposure and development;
etching the silicon oxide layer by dry etching to form an etched surface with a smooth and flat surface;
forming a second predetermined pattern having air holes by dry-etching the luminescent layer 140;
removing the electronic glue by dry etching;
removing the silicon oxide layer by wet etching;
a portion of the sacrificial layer 130 is etched through the air holes of the light emitting layer 140 by wet etching to form a hollow structure.
Exemplarily, the silicon oxide layer may be etched by an RIE (Reactive Ion Etching) process to obtain an etched surface with a smooth and flat surface, and then the light emitting layer is etched by ICP (Inductively coupled plasma Etching) to remove a portion of the light emitting layer material that is not masked by the upper mask material, so as to obtain a second predetermined pattern on the light emitting layer material, which completely corresponds to the mask pattern.
For example, ZEP520 paste or the like can be used as the electronic paste. In some embodiments, if the electronic paste is ZEP520 paste, the above-mentioned removing the electronic paste ZEP520 by dry etching includes: the solid glue layer is stripped through plasma impact, so that higher etching rate and higher glue removal control precision can be obtained.
For example, BOE (Buffered Oxide Etch) may be used as the etching solution for wet etching of the silicon Oxide layer, and the solution is formed by mixing hydrofluoric acid or ammonium fluoride with water according to a predetermined ratio.
A portion of the sacrificial layer is etched through the holes of the light emitting layer by wet etching to form a hollow structure. In some embodiments, the hollow structure is a hollow ring structure. Exemplarily, the etching solution for the sacrificial layer wet etching will be hydrofluoric acid solution. The reactant in the solution reaches the surface of the sacrificial layer through the holes of the light emitting layer by using a diffusion effect, and then chemically reacts with the material of the sacrificial layer to generate various products, and the products are discharged together with the solution.
Fig. 3 shows an electron microscope observation view of a device structure for preparing a silicon-based quantum dot photonic crystal laser according to an embodiment of the present invention. The light emitting region shown in fig. 3 is a periodic air hole penetrating structure. It can be understood that the photonic crystal structure is composed of periodic air holes, and the prepared photonic crystal structure is a photonic crystal structure with an L3 defect, namely three air hole defects are removed on the basis of a two-dimensional photonic crystal air hole structure. The period (a) interval of the removed air holes ranges from 240nm to 400nm, the radius (r) of the air holes ranges from 0.25a to 0.29a, and the displacement size of the L3 defect ranges from 0.15a to 0.19 a. The setting of the structural parameters can effectively limit the luminescence of the L3 defect photonic crystal microcavity structure to the 1300nm communication waveband.
Fig. 4 shows a laser spectrum of a silicon-based quantum dot photonic crystal laser, which realizes single-mode lasing in a wavelength range of 1200nm to 1350nm and verifies that the silicon-based quantum dot laser realizes laser lasing.
The above description is only for the specific embodiments of the present invention, but the scope of the present invention is not limited thereto, and any person skilled in the art can easily conceive of the changes or substitutions within the technical scope of the present invention, and all the changes or substitutions should be covered within the scope of the present invention. Therefore, the protection scope of the present invention shall be subject to the protection scope of the claims.
Claims (10)
1. A silicon-based quantum dot photonic crystal laser is characterized by comprising a silicon substrate layer, a defect inhibiting layer, a sacrificial layer, a light emitting layer and a cover layer which are sequentially stacked:
the defect inhibiting layer is positioned on the silicon substrate layer and comprises a first quantum dot layer and a III-V buffer layer which are alternately stacked, the first quantum dot layer is contacted with the silicon substrate layer, and the III-V buffer layer is contacted with the sacrificial layer;
the sacrificial layer is of a hollow structure;
the light-emitting layer comprises second quantum dot layers, spacing layers and cladding layers which are alternately stacked, the spacing layers are in contact with the sacrificial layers and the cladding layers, and the light-emitting layer is of an air hole structure.
2. The silicon-based quantum dot photonic crystal laser of claim 1, wherein the first quantum dot layer is an InAs quantum dot layer.
3. The silicon-based quantum dot photonic crystal laser of claim 1, wherein the defect-suppression layer comprises 4 layers of the first quantum dot layer.
4. The silicon-based quantum dot photonic crystal laser of claim 1, wherein the group iii-v buffer layer is a GaAs layer.
5. The silicon-based quantum dot photonic crystal laser of claim 1, wherein the thickness of the group iii-v buffer layer in contact with the sacrificial layer ranges from 500nm to 700nm, and the thickness of the remaining group iii-v buffer layers ranges from 700nm to 900 nm.
6. The silicon-based quantum dot photonic crystal laser of claim 1, wherein the material of the sacrificial layer is AlXGa1-XAs, wherein, the value range of X is 0.6-0.96;
the thickness of the sacrificial layer ranges from 600nm to 1000 nm.
7. The silicon-based quantum dot photonic crystal laser of claim 1, wherein said light emitting layer comprises 5 of said second quantum dot layers, said second quantum dot layers being InAs quantum dot layers, said spacer layers being GaAs layers.
8. The silicon-based quantum dot photonic crystal laser of claim 1, wherein the cladding layer is Al0.4The thickness of the GaAs layer ranges from 60nm to 100 nm.
9. The silicon-based quantum dot photonic crystal laser of claim 1, wherein a cap layer is provided on the light emitting layer, the cap layer is made of GaAs, and the thickness ranges from 10nm to 15 nm.
10. A method of processing a silicon-based quantum dot photonic crystal laser, wherein the silicon-based quantum dot photonic crystal laser employs the silicon-based quantum dot photonic crystal laser according to any one of claims 1 to 9, the method comprising:
growing a defect suppression layer on the silicon substrate layer;
growing a sacrificial layer on the defect-inhibiting layer;
growing a light emitting layer on the sacrificial layer;
growing a cap layer on the light emitting layer;
growing a silicon oxide layer on the cap layer;
coating electronic glue on the silicon oxide layer, and forming a first preset pattern on the electronic glue through electron beam exposure and development;
etching the silicon oxide layer by dry etching to form an etched surface with a smooth and flat surface;
forming a second predetermined pattern having air holes by dry etching the light emitting layer;
removing the electronic glue by dry etching;
removing the silicon oxide layer by wet etching;
the sacrificial layer is etched through the air holes by wet etching to form hollow structures.
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Cited By (2)
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| CN116111449A (en) * | 2023-04-11 | 2023-05-12 | 湖南汇思光电科技有限公司 | Optical pumping one-dimensional photonic crystal micro-nano laser and preparation method thereof |
| CN116231447A (en) * | 2023-05-08 | 2023-06-06 | 中国科学院半导体研究所 | Integrated light source based on photonic crystal surface emitting semiconductor laser and silicon optical chip |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20120153260A1 (en) * | 2010-12-16 | 2012-06-21 | Kim Seheon | Chemically-etched nanostructures and related devices |
| US20140301418A1 (en) * | 2009-02-27 | 2014-10-09 | California Institute Of Technology | Photonic crystal cavities and related devices and methods |
| US20160087406A1 (en) * | 2012-03-29 | 2016-03-24 | Sandia Corporation | White light illuminant comprising quantum dot lasers and phosphors |
| CN107112720A (en) * | 2017-03-27 | 2017-08-29 | 香港中文大学（深圳） | Flexible laser device based on photonic crystal and preparation method thereof |
| CN110535033A (en) * | 2018-05-24 | 2019-12-03 | 智林企业股份有限公司 | It is electrically excited photonic crystal surface emitting laser element |
-
2020
- 2020-08-06 CN CN202010785225.8A patent/CN111864536A/en active Pending
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20140301418A1 (en) * | 2009-02-27 | 2014-10-09 | California Institute Of Technology | Photonic crystal cavities and related devices and methods |
| US20120153260A1 (en) * | 2010-12-16 | 2012-06-21 | Kim Seheon | Chemically-etched nanostructures and related devices |
| US20160087406A1 (en) * | 2012-03-29 | 2016-03-24 | Sandia Corporation | White light illuminant comprising quantum dot lasers and phosphors |
| CN107112720A (en) * | 2017-03-27 | 2017-08-29 | 香港中文大学（深圳） | Flexible laser device based on photonic crystal and preparation method thereof |
| CN110535033A (en) * | 2018-05-24 | 2019-12-03 | 智林企业股份有限公司 | It is electrically excited photonic crystal surface emitting laser element |
Non-Patent Citations (1)
| Title |
|---|
| TAOJIE ZHOU等: "Continuous-wave quantum-dot photonic crystal lasers grown on on-axis silicon (001)", 《NATURE COMMUNICATIONS》 * |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN116111449A (en) * | 2023-04-11 | 2023-05-12 | 湖南汇思光电科技有限公司 | Optical pumping one-dimensional photonic crystal micro-nano laser and preparation method thereof |
| CN116231447A (en) * | 2023-05-08 | 2023-06-06 | 中国科学院半导体研究所 | Integrated light source based on photonic crystal surface emitting semiconductor laser and silicon optical chip |
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