CN111863804B - Trigger voltage adjustable bidirectional ESD protection device, structure and preparation method - Google Patents

Trigger voltage adjustable bidirectional ESD protection device, structure and preparation method Download PDF

Info

Publication number
CN111863804B
CN111863804B CN202010667706.9A CN202010667706A CN111863804B CN 111863804 B CN111863804 B CN 111863804B CN 202010667706 A CN202010667706 A CN 202010667706A CN 111863804 B CN111863804 B CN 111863804B
Authority
CN
China
Prior art keywords
well
injection region
region
pnp triode
esd protection
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
CN202010667706.9A
Other languages
Chinese (zh)
Other versions
CN111863804A (en
Inventor
刘森
李建平
史林森
刘兴龙
罗建富
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Micro Niche Guangzhou Semiconductor Co Ltd
Original Assignee
Micro Niche Guangzhou Semiconductor Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Micro Niche Guangzhou Semiconductor Co Ltd filed Critical Micro Niche Guangzhou Semiconductor Co Ltd
Priority to CN202010667706.9A priority Critical patent/CN111863804B/en
Publication of CN111863804A publication Critical patent/CN111863804A/en
Application granted granted Critical
Publication of CN111863804B publication Critical patent/CN111863804B/en
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/0203—Particular design considerations for integrated circuits
    • H01L27/0248—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection
    • H01L27/0251—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices
    • H01L27/0259—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices using bipolar transistors as protective elements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
    • H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
    • H01L21/822—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being a semiconductor, using silicon technology
    • H01L21/8222—Bipolar technology

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing & Machinery (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Thyristors (AREA)

Abstract

The invention provides a bidirectional ESD protection device with adjustable trigger voltage, a structure and a preparation method, wherein the bidirectional ESD protection device comprises: a deep N well on the substrate; the N trap and the P trap are adjacently arranged in the deep N trap; the first P + injection region is arranged in the N well, the second P + injection region is arranged in the N well and the P well, and an isolation region is arranged between the first P + injection region and the second P + injection region; the first P + injection region, the N well and the second P + injection region form a first PNP triode, the first P + injection region, the N well and the P well form a second PNP triode, and the contact area of the N well and the second P + injection region is adjustable. The bidirectional ESD protection device with the adjustable trigger voltage, the structure and the preparation method of the invention connect PNP triodes with different breakdown voltages in parallel, and the adjustment of the trigger voltage is realized by adjusting the contact area of the parallel parts; meanwhile, the bidirectional protection of positive and negative signals is realized based on a PNP triode equivalent to two back-to-back diode structures.

Description

Trigger voltage adjustable bidirectional ESD protection device, structure and preparation method
Technical Field
The invention relates to the field of electrostatic protection, in particular to a bidirectional ESD protection device with adjustable trigger voltage, a structure and a preparation method.
Background
As microelectronic devices are scaled down in size and functionally integrated, Electrostatic discharge (ESD) protection of chips is becoming increasingly important. On one hand, the gate dielectric and isolation of the small-size device are thinner, so that the electrostatic bearing capacity of the device is weakened, and the window of the ESD device design is narrowed; on the other hand, more and more modules are integrated on a silicon substrate, resulting in more and more risk of the chips being exposed to ESD.
ESD protection devices are classified into non-hysteretic devices and hysteretic devices. The non-hysteresis device exhibits low resistance characteristics after passing a trigger voltage, thereby discharging ESD surge current, such as a resistor, a diode, and the like. A feedback loop exists in the hysteresis device, when the hysteresis device reaches trigger voltage, the current of the device is increased, then the voltage drop of the device is reduced, the hysteresis device enters a maintaining state, a low-resistance path is formed, and therefore current is discharged, such as a gate grounding NMOS, a gate control MOS, a bipolar transistor and the like. Compared with a non-hysteresis device, the hysteresis device has stronger protection capability and flexibility, but needs to be designed according to a specific process and is difficult to perform circuit simulation.
Most ESD devices allow only unidirectional positive signals, since the parasitic diode can shunt negative signals to ground. However, in some applications, such as digital subscriber line interfaces, NFC antennas, etc., both positive and negative signals are present at the input and output ports. Therefore, under these circumstances, a bidirectional ESD protection device is required. Some devices capable of realizing bidirectional ED protection are proposed in the prior art, but the problems that the breakdown voltage is too low, the trigger voltage is difficult to control, and even other circuits are controlled and latched are caused generally exist.
Therefore, how to provide a bidirectional ESD protection device with adjustable trigger voltage has become one of the problems to be solved by those skilled in the art.
Disclosure of Invention
In view of the above drawbacks of the prior art, an object of the present invention is to provide a bidirectional ESD protection device with adjustable trigger voltage, a structure and a manufacturing method thereof, which are used to solve the problems that the ESD protection device in the prior art cannot give consideration to bidirectional protection and adjustable trigger voltage.
To achieve the above and other related objects, the present invention provides a trigger voltage adjustable bidirectional ESD protection structure, which at least includes:
a deep N well on the substrate;
the N trap and the P trap are adjacently arranged in the deep N trap;
the first P + injection region is arranged in the N well, the second P + injection region is arranged in the N well and the P well, and an isolation region is arranged between the first P + injection region and the second P + injection region;
the first P + injection region, the N well and the second P + injection region form a first PNP triode, the first P + injection region, the N well and the P well form a second PNP triode, and the contact area of the N well and the first P + injection region is adjustable.
Optionally, isolation regions are disposed on both a side of the first P + implantation region away from the second P + implantation region and a side of the second P + implantation region away from the first P + implantation region.
More optionally, the isolation region is a shallow trench isolation structure.
Optionally, the first P + injection region leads out an anode electrode, and the second P + injection region leads out a cathode electrode.
In order to achieve the above and other related objects, the present invention provides a method for manufacturing a trigger voltage adjustable bidirectional ESD protection structure, which at least includes:
providing a substrate, and forming a deep N well in the substrate;
forming an N well and a P well which are adjacently arranged in the deep N well;
forming an isolation region and a first P + injection region in the N well, and forming a second P + injection region in the N well and the P well, wherein the isolation region is arranged between the first P + injection region and the second P + injection region;
the first P + injection region, the N well and the second P + injection region form a first PNP triode, the first P + injection region, the N well and the P well form a second PNP triode, and the contact area of the N well and the first P + injection region is adjustable.
Optionally, the isolation region is formed by a shallow trench isolation process.
Optionally, the preparation method of the bidirectional ESD protection structure with adjustable trigger voltage further includes a step of leading out an anode electrode in the first P + injection region and a cathode electrode in the second P + injection region.
To achieve the above and other related objects, the present invention provides a trigger voltage adjustable bidirectional ESD protection device, comprising:
the PNP triode comprises a first PNP triode and a second PNP triode which are connected in parallel, wherein the emitter region and the base region of the first PNP triode and the emitter region and the base region of the second PNP triode are shared;
the collector electrodes of the first PNP triode and the second PNP triode are taken as cathode electrodes to be led out, the base electrodes are floated, and the emitter electrodes are taken as anode electrodes to be led out; the breakdown voltage of the first PNP triode is smaller than that of the second PNP triode.
As described above, the bidirectional ESD protection device with adjustable trigger voltage, the structure and the manufacturing method of the present invention have the following advantages:
the bidirectional ESD protection device with the adjustable trigger voltage, the structure and the preparation method of the invention connect PNP triodes with different breakdown voltages in parallel, and the adjustment of the trigger voltage is realized by adjusting the contact area of the parallel parts; meanwhile, the bidirectional protection of positive and negative signals is realized based on a PNP triode equivalent to two back-to-back diode structures.
Drawings
Fig. 1 is a schematic diagram of a trigger voltage tunable bidirectional ESD protection structure according to the present invention.
Fig. 2 is a schematic diagram of the trigger voltage tunable bidirectional ESD protection device of the present invention.
Description of the element reference numerals
1 trigger voltage adjustable bidirectional ESD protection structure
11 substrate
12 deep N-well
13N well
14P trap
15 first P + implantation region
16 second P + implantation region
17a, 17b isolation region
18 anode electrode
19 cathode electrode
1a first PNP triode
1b second PNP triode
S1-S3
Detailed Description
The embodiments of the present invention are described below with reference to specific embodiments, and other advantages and effects of the present invention will be easily understood by those skilled in the art from the disclosure of the present specification. The invention is capable of other and different embodiments and of being practiced or of being carried out in various ways, and its several details are capable of modification in various respects, all without departing from the spirit and scope of the present invention.
Please refer to fig. 1-2. It should be noted that the drawings provided in the present embodiment are only for illustrating the basic idea of the present invention, and the components related to the present invention are only shown in the drawings rather than drawn according to the number, shape and size of the components in actual implementation, and the type, quantity and proportion of the components in actual implementation may be changed freely, and the layout of the components may be more complicated.
Example one
As shown in fig. 1, the present embodiment provides a trigger voltage adjustable bidirectional ESD protection structure 1, where the trigger voltage adjustable bidirectional ESD protection structure 1 includes:
the semiconductor device comprises a substrate 11, a deep N well 12, an N well 13, a P well 14, a first P + injection region 15, a second P + injection region 16 and an isolation region 17 a.
As shown in fig. 1, the substrate 11 is located at the bottom layer.
Specifically, the material of the substrate 11 includes, but is not limited to, sapphire, Si, and SiC, which are not described in detail herein. In this embodiment, the substrate 11 is a P-type lightly doped substrate.
As shown in fig. 1, the Deep N-Well (DNW) 12 is located on the substrate 11.
Specifically, the deep N well 12 is an N-type lightly doped deep well.
As shown in fig. 1, the N-well 13 and the P-well 14 are formed within the deep N-well 12.
Specifically, the N-well 13 and the P-well 14 are wells formed by N-type light doping and P-type light doping, respectively, and the doping concentration of the N-well 13 and the P-well 14 is greater than that of the deep N-well 12; the doping concentration of the N-well 13 and the doping concentration of the P-well 14 may be the same or different, and may be set based on actual needs, which is not described herein. The N well 13 and the P well 14 are disposed adjacent to each other, and sidewalls thereof are in contact with each other.
As shown in fig. 1, the first P + implantation region 15, the second P + implantation region 16 and the isolation region 17a are formed in the N-well 13 and the P-well 14.
Specifically, the first P + implantation region 15 and the second P + implantation region 16 are P-type heavily doped, and the doping concentration of the first P + implantation region 15 and the second P + implantation region 16 is greater than the doping concentration of the N-well 13 and the P-well; the doping concentration of the first P + implantation region 15 and the doping concentration of the second P + implantation region 16 may be the same or different, and may be set based on actual needs, which is not described herein. An insulation isolation is formed between the first P + implantation region 15 and the second P + implantation region 16 through the isolation region 17a, and the depth of the isolation region 17a is greater than the depth of the first P + implantation region 15 and the depth of the second P + implantation region 16; in this embodiment, the isolation region 17a is a shallow trench isolation structure. The first P + implantation region 15 and the isolation region 17a are located in the N-well 13, and the second P + implantation region 16 spans the N-well 13 and the P-well 14.
It should be noted that fig. 1 shows two bilaterally symmetric bidirectional ESD protection structures 1 with adjustable trigger voltage according to the present embodiment, the N well 13 and the first P + implantation region 15 are shared, and at this time, as an implementation manner of the present invention, an isolation region 17b is also disposed on a side of the second P + implantation region 16 away from the first P + implantation region 15, so as to improve device performance. In practical use, only the left or right half structure may be included, and as another implementation manner of the present invention, the isolation region 17b is disposed on both the side of the first P + implantation region 15 away from the second P + implantation region 16 and the side of the second P + implantation region 16 away from the first P + implantation region 15, so as to improve the device performance. In the present embodiment, the isolation region also adopts a shallow trench isolation structure.
As an implementation of the present invention, the first P + injection region 15 leads to an anode electrode 18, and the second P + injection region 16 leads to a cathode electrode 19.
The working principle of the trigger voltage adjustable bidirectional ESD protection structure 1 is as follows:
the first P + injection region 15, the N well 13 and the second P + injection region 16 form a first PNP triode 1a, the first P + injection region 15, the N well 13 and the P well 14 form a second PNP triode 1b, and the two triodes are connected in parallel; the emitter region (the first P + injection region 15) and the base region (the N trap 13) of the two triodes are shared, the collector and the emitter are respectively taken as the cathode and the anode to be led out, and the base is floated. The first P + implantation region 15 and the second P + implantation region 16 have higher doping concentrations, so that the breakdown voltage is lower; the P-well 14 has a low doping concentration and a high breakdown voltage. When the ESD pulse comes, the first PNP transistor 1a with a lower breakdown voltage is first connected in series to form a leakage current, but the leakage current is not rapid, and then the second PNP transistor 1b with a higher breakdown voltage is also connected in series to promote the leakage of the ESD current.
The contact area between the N well 13 and the second P + injection region 16 is adjusted to control the size of the parasitic resistance, so that the turn-on voltage is influenced, and finally the trigger voltage is regulated.
In addition, the floating PNP triode is equivalent to two diodes which are connected back to back, so that the floating PNP triode can be used for realizing the protection of positive and negative signals, namely bidirectional ESD protection.
Example two
The embodiment provides a method for manufacturing a trigger voltage adjustable bidirectional ESD protection structure 1 according to the first embodiment, and as shown in fig. 1, the method for manufacturing the trigger voltage adjustable bidirectional ESD protection structure includes:
s1) providing a substrate 11, forming a deep N-well 12 in the substrate 11.
Specifically, a substrate 11 is provided, and a deep N-well 12 is formed in the substrate 11. In this embodiment, since the deep N-well 12 is relatively deep, the deep N-well 12 is obtained by diffusion, and in practical use, an ion implantation method may also be adopted, which is not described herein again.
S2) forms adjacently disposed N-well 13 and P-well 14 in the deep N-well 12.
Specifically, the N-well 13 and the P-well 14 are formed in the deep N-well 12 by a method including, but not limited to, ion implantation or diffusion, and different types of doping ions and doping concentrations are selected based on actual needs to obtain the N-well 13 and the P-well 14, and specific steps are not described herein.
S3) forming an isolation region 17a and a first P + implant region 15 in the N-well 13, and forming a second P + implant region 16 in the N-well 13 and the P-well 14, the isolation region 17a being between the first P + implant region 15 and the second P + implant region 16.
Specifically, in the present embodiment, an isolation region 17a is first formed in the N-well 14, and as an example, the isolation region 17a is formed by a shallow trench isolation process; then, a first P + implantation region 15 and a second P + implantation region 16 are formed in the N-well and the P-well on both sides of the isolation region 17a by means of ion implantation, and the second P + implantation region 16 is simultaneously in contact with the N-well 13 and the P-well 14.
It should be noted that, in step S3, the first P + implantation region 15 and the second P + implantation region 16 may be formed first, and then the isolation region 17a is formed, which is not described herein again.
As an implementation manner of the present invention, the side of the second P + implantation region 16 away from the first P + implantation region 15 is also provided with an isolation region 17 b. When the second P + implantation region 16 is disposed on only one side of the first P + implantation region 15, isolation regions 17b are disposed on both the side of the first P + implantation region 15 away from the second P + implantation region 16 and the side of the second P + implantation region 16 away from the first P + implantation region 15.
As an implementation manner not in the present invention, the method further includes a step of leading out an anode electrode 18 in the first P + injection region 15 and a cathode electrode 19 in the second P + injection region 16, which is not described herein again.
EXAMPLE III
As shown in fig. 2, the present embodiment provides a trigger voltage tunable bidirectional ESD protection device, which includes:
a first PNP transistor 1a (shown by a dotted line) and a second PNP transistor 1b (shown by a solid line) connected in parallel, the first PNP transistor 1a and the second PNP transistor 1b having an emitter region and a base region in common; the collectors of the first PNP triode 1a and the second PNP triode 1b are taken as cathode electrodes 19 to be led out, the bases are floated, and the emitters are taken as anode electrodes 18 to be led out; the breakdown voltage of the first PNP triode 1a is smaller than the breakdown voltage of the second PNP triode 1 b.
The trigger voltage adjustable bidirectional ESD protection device of the embodiment is different from the traditional parallel connection, the parasitic effect is utilized, so that the emitting region and the base region of the first PNP triode 1a and the emitting region and the base region of the second PNP triode 1b are shared, the collector region is separately arranged, the doping concentration of the collector region is different, the area of the trigger voltage adjustable bidirectional ESD protection device is reduced, and the trigger voltage adjustable bidirectional ESD protection is realized.
It should be noted that the structure of the bidirectional ESD protection device with adjustable trigger voltage may be the structure as in the first embodiment, or may also adopt other structures capable of implementing the device, which is not limited to this embodiment.
In summary, the present invention provides a bidirectional ESD protection device with adjustable trigger voltage, a structure and a manufacturing method thereof, including: a deep N well on the substrate; the N trap and the P trap are adjacently arranged in the deep N trap; and the first P + injection region is arranged in the N well, the second P + injection region is arranged in the N well and the P well, and an isolation region is arranged between the first P + injection region and the second P + injection region. The bidirectional ESD protection device with the adjustable trigger voltage, the structure and the preparation method of the invention connect PNP triodes with different breakdown voltages in parallel, and the adjustment of the trigger voltage is realized by adjusting the contact area of the parallel parts; meanwhile, the bidirectional protection of positive and negative signals is realized based on a PNP triode equivalent to two back-to-back diode structures. Therefore, the invention effectively overcomes various defects in the prior art and has high industrial utilization value.
The foregoing embodiments are merely illustrative of the principles and utilities of the present invention and are not intended to limit the invention. Any person skilled in the art can modify or change the above-mentioned embodiments without departing from the spirit and scope of the present invention. Accordingly, it is intended that all equivalent modifications or changes which can be made by those skilled in the art without departing from the spirit and technical spirit of the present invention be covered by the claims of the present invention.

Claims (6)

1. A trigger voltage adjustable bidirectional ESD protection structure is characterized in that the trigger voltage adjustable bidirectional ESD protection structure at least comprises:
a deep N well on the substrate;
the N trap and the P trap are adjacently arranged in the deep N trap;
the first P + injection region is arranged in the N well, the second P + injection region is arranged in the N well and the P well, and an isolation region is arranged between the first P + injection region and the second P + injection region;
the first P + injection region, the N well and the second P + injection region form a first PNP triode, the first P + injection region, the N well and the P well form a second PNP triode, and the contact area between the N well and the second P + injection region is adjustable;
the first P + injection region leads out an anode electrode, and the second P + injection region leads out a cathode electrode.
2. The trigger voltage tunable bi-directional ESD protection structure of claim 1, wherein: isolation regions are arranged on one side of the first P + injection region, which is far away from the second P + injection region, and on one side of the second P + injection region, which is far away from the first P + injection region.
3. The trigger voltage tunable bi-directional ESD protection structure of claim 1 or 2, wherein: the isolation region is a shallow trench isolation structure.
4. A preparation method of a trigger voltage adjustable bidirectional ESD protection structure is characterized by at least comprising the following steps:
providing a substrate, and forming a deep N well in the substrate;
forming an N well and a P well which are adjacently arranged in the deep N well;
forming an isolation region and a first P + injection region in the N well, and forming a second P + injection region in the N well and the P well, wherein the isolation region is arranged between the first P + injection region and the second P + injection region;
leading out an anode electrode in the first P + injection region and a cathode electrode in the second P + injection region;
the first P + injection region, the N well and the second P + injection region form a first PNP triode, the first P + injection region, the N well and the P well form a second PNP triode, and the contact area of the N well and the first P + injection region is adjustable.
5. The method according to claim 4, wherein the trigger voltage adjustable bidirectional ESD protection structure comprises: the isolation region is formed by adopting a shallow trench isolation process.
6. A trigger voltage tunable bidirectional ESD protection device implemented based on the trigger voltage tunable bidirectional ESD protection structure of any of claims 1-3, wherein the trigger voltage tunable bidirectional ESD protection device comprises at least:
the PNP triode comprises a first PNP triode and a second PNP triode which are connected in parallel, wherein the emitter region and the base region of the first PNP triode and the emitter region and the base region of the second PNP triode are shared;
the collector electrodes of the first PNP triode and the second PNP triode are taken as cathode electrodes to be led out, the base electrodes are floated, and the emitter electrodes are taken as anode electrodes to be led out; the breakdown voltage of the first PNP triode is smaller than that of the second PNP triode.
CN202010667706.9A 2020-07-13 2020-07-13 Trigger voltage adjustable bidirectional ESD protection device, structure and preparation method Active CN111863804B (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN202010667706.9A CN111863804B (en) 2020-07-13 2020-07-13 Trigger voltage adjustable bidirectional ESD protection device, structure and preparation method

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN202010667706.9A CN111863804B (en) 2020-07-13 2020-07-13 Trigger voltage adjustable bidirectional ESD protection device, structure and preparation method

Publications (2)

Publication Number Publication Date
CN111863804A CN111863804A (en) 2020-10-30
CN111863804B true CN111863804B (en) 2021-09-07

Family

ID=72983292

Family Applications (1)

Application Number Title Priority Date Filing Date
CN202010667706.9A Active CN111863804B (en) 2020-07-13 2020-07-13 Trigger voltage adjustable bidirectional ESD protection device, structure and preparation method

Country Status (1)

Country Link
CN (1) CN111863804B (en)

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5856214A (en) * 1996-03-04 1999-01-05 Winbond Electronics Corp. Method of fabricating a low voltage zener-triggered SCR for ESD protection in integrated circuits
US6791146B2 (en) * 2002-06-25 2004-09-14 Macronix International Co., Ltd. Silicon controlled rectifier structure with guard ring controlled circuit
US7919817B2 (en) * 2008-05-16 2011-04-05 Alpha & Omega Semiconductor Ltd. Electrostatic discharge (ESD) protection applying high voltage lightly doped drain (LDD) CMOS technologies
CN102054860A (en) * 2009-11-05 2011-05-11 上海宏力半导体制造有限公司 Bidirectional silicon-controlled rectifier (SCR) and electrostatic protection circuit
US9231403B2 (en) * 2014-03-24 2016-01-05 Texas Instruments Incorporated ESD protection circuit with plural avalanche diodes

Also Published As

Publication number Publication date
CN111863804A (en) 2020-10-30

Similar Documents

Publication Publication Date Title
US6236087B1 (en) SCR cell for electrical overstress protection of electronic circuits
US8692289B2 (en) Fast turn on silicon controlled rectifiers for ESD protection
US7718481B2 (en) Semiconductor structure and method of manufacture
US9231403B2 (en) ESD protection circuit with plural avalanche diodes
US9330961B2 (en) Stacked protection devices and related fabrication methods
US9929137B2 (en) Method for manufacturing ESD protection device
CN104851919A (en) Bidirectional punch-through semiconductor device and manufacture method thereof
JP3090081B2 (en) Semiconductor device
CN110518012B (en) Grid-constrained silicon controlled rectifier ESD device and implementation method thereof
US9006833B2 (en) Bipolar transistor having sinker diffusion under a trench
US9831327B2 (en) Electrostatic discharge protection devices and methods of forming the same
CN111863804B (en) Trigger voltage adjustable bidirectional ESD protection device, structure and preparation method
CN115621318A (en) GGNMOS transistor structure, ESD protection device and circuit
TWI716994B (en) Esd protection device with low trigger voltage
CN110518010B (en) PMOS device with embedded silicon controlled rectifier and implementation method thereof
CN116207090A (en) Electrostatic discharge protection structure
CN112510664B (en) ESD protection structure design and preparation method based on diode and protection circuit
CN112103286B (en) Trigger voltage adjustable bidirectional ESD protection device and preparation method thereof
CN116705849B (en) Semiconductor structure and preparation method thereof
US20230378165A1 (en) Electrostatic Discharge Protection Device Having Multiple Pairs of PN Stripes and Methods of Fabrication Thereof
CN111430305B (en) Method for manufacturing electrostatic discharge protection device and electrostatic discharge protection device
CN111584479B (en) Electrostatic protection structure and semiconductor device
CN111180421B (en) Transistor structure for electrostatic protection and manufacturing method thereof
CN211208445U (en) Integrated circuit with a plurality of transistors
CN111816650B (en) SCR electrostatic protection structure and forming method thereof

Legal Events

Date Code Title Description
PB01 Publication
PB01 Publication
SE01 Entry into force of request for substantive examination
SE01 Entry into force of request for substantive examination
GR01 Patent grant
GR01 Patent grant