CN111863669A - COB die bonding balance method and system and COB die bonding machine - Google Patents
COB die bonding balance method and system and COB die bonding machine Download PDFInfo
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- CN111863669A CN111863669A CN202010761067.2A CN202010761067A CN111863669A CN 111863669 A CN111863669 A CN 111863669A CN 202010761067 A CN202010761067 A CN 202010761067A CN 111863669 A CN111863669 A CN 111863669A
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- 238000000034 method Methods 0.000 title claims abstract description 31
- 235000012431 wafers Nutrition 0.000 claims description 186
- 238000013507 mapping Methods 0.000 claims description 19
- 239000000758 substrate Substances 0.000 claims description 11
- 230000007246 mechanism Effects 0.000 claims description 9
- 238000000605 extraction Methods 0.000 claims description 3
- 238000003466 welding Methods 0.000 claims description 3
- 238000012216 screening Methods 0.000 claims 3
- 238000011161 development Methods 0.000 abstract description 4
- 230000004075 alteration Effects 0.000 abstract description 3
- 230000009286 beneficial effect Effects 0.000 abstract description 2
- 239000013078 crystal Substances 0.000 description 11
- 238000007711 solidification Methods 0.000 description 3
- 230000008023 solidification Effects 0.000 description 3
- 239000011324 bead Substances 0.000 description 2
- 238000010009 beating Methods 0.000 description 2
- 239000003086 colorant Substances 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 238000009954 braiding Methods 0.000 description 1
- 238000004590 computer program Methods 0.000 description 1
- 238000012937 correction Methods 0.000 description 1
- 238000012536 packaging technology Methods 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67144—Apparatus for mounting on conductive members, e.g. leadframes or conductors on insulating substrates
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67121—Apparatus for making assemblies not otherwise provided for, e.g. package constructions
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/677—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
- H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
- H01L25/075—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00
- H01L25/0753—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00 the devices being arranged next to each other
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
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Abstract
The invention provides a COB die bonding balance method, a COB die bonding balance system and a COB die bonding machine. The invention has the beneficial effects that: the COB die bonder adopts a COB die bonding balance method, so that great chromatic aberration is avoided when a large LED display screen is formed, the product quality is ensured, the process flow of a supplier is saved, and the COB die bonder has revolutionary significance for industrial development.
Description
Technical Field
The invention relates to the technical field of LEDs, in particular to a COB die bonding balance method and system and a COB die bonding machine.
Background
The COB technology is an emerging LED packaging technology, and is different from the traditional SMD surface-mounted package in that light-emitting chips are integrated into a PCB, rather than being soldered to the PCB. COB has effectively promoted the luminous photochromic of LED display screen, reduces the risk, reduce cost.
In the die bonding process, the wafer in the current wafer tray is usually fixed, and then the next wafer tray is introduced to continue die bonding. Due to the manufacturing difference of the wafers, the wavelength difference of the same wafer disc is small, and the wavelength difference of different wafer discs is large. This means that when the current wafer disk is used up, the next finished product made from the next wafer disk is spliced with the previous finished product to form a large screen, and there is a high possibility that there will be color difference between them, and since human eyes are sensitive, the image distortion will occur.
Disclosure of Invention
The invention provides a COB die bonding balance method, which comprises the steps of controlling a die bonding head to extract wafers in a plurality of wafer disks, then controlling the die bonding head to bond the extracted wafers on a substrate, and applying a certain algorithm to ensure that wafers with different electrical parameters are fixed around each die bonding point during die bonding.
As a further improvement of the invention, aiming at the condition that each wafer disc is screened by manufacturers, namely wafers with similar electrical parameters are placed in one wafer disc, the light-emitting wavelength of the wafers in each wafer disc is similar, firstly, a plurality of wafer discs are fixed in place, and then, when the wafers are fixed, the wafers above, below, left and right of each crystal fixing point are ensured to come from different wafer discs, so that the wafers with different wavelengths are arranged around each crystal fixing point; wafers with similar electrical parameters refer to wafers with electrical parameters within a set range.
As a further improvement of the invention, aiming at the condition that each wafer disk is not screened by a manufacturer, each wafer disk corresponds to a mapping table, the mapping table defines the electrical parameters of each wafer in the wafer disk, the mapping table is input into a computer control program, the computer control program can identify the electrical parameters corresponding to each wafer in each wafer disk, and the computer control program controls the die bonding head to bond wafers with different electrical parameters at different die bonding points during die bonding.
As a further improvement of the invention, the number of the die bonding heads is two.
The invention also provides a COB die bonding balance system, which comprises:
a wafer extraction module: the wafer fixing head is used for controlling the wafer fixing head to extract wafers from the plurality of wafer disks;
a die bonding module: the wafer fixing device is used for controlling the wafer fixing head to fix the extracted wafer on the substrate, fixing welding spot positions during wafer fixing, and ensuring that wafers with different electrical parameters are fixed around each wafer fixing point by the computer according to a certain algorithm.
As a further improvement of the invention, aiming at the condition that each wafer disc is screened by manufacturers, namely wafers with similar electrical parameters are placed in one wafer disc, the light-emitting wavelength of the wafers in each wafer disc is similar, firstly, a plurality of wafer discs are fixed in place and recorded in sequence, and then, when the wafers are fixed, the wafers above, below, left and right of each crystal fixing point are ensured to come from different wafer discs, so that the wafers with different wavelengths are arranged around each crystal fixing point.
As a further improvement of the invention, aiming at the condition that each wafer disk is not screened by a manufacturer, each wafer disk corresponds to a mapping table, the mapping table defines the electrical parameters of each wafer in the wafer disk, the mapping table is input into a computer control program, the computer control program can identify the electrical parameters corresponding to each wafer in each wafer disk, and the computer control program controls the die bonding head to bond wafers with different electrical parameters at different die bonding points during die bonding.
As a further improvement of the invention, the number of the die bonding heads is two.
The invention also provides a COB die bonder which comprises a die bonder table, two die bonder heads and a plurality of die discs, wherein the die bonder tables are distributed on two sides of the die bonder table, the two die bonder heads are positioned on two sides of the die bonder table, wafers are arranged in the die discs, the die bonder heads are used for bonding the wafers in the die discs to a substrate placed on the die bonder table, and the COB die bonder is provided with the COB die bonder balance system as claimed in any one of claims 5 to 8.
As a further improvement of the invention, the COB die bonder further comprises two swing arms, two swing arm driving mechanisms and a linear motor, wherein the two swing arms are connected with the two swing arm driving mechanisms, the two swing arm driving mechanisms respectively drive the two swing arms to swing, the two die bonder heads are respectively installed on the two swing arms, and the linear motor drives the die bonding disc to move.
The invention has the beneficial effects that: the COB die bonder adopts a COB die bonding balance method, so that great chromatic aberration is avoided when a large LED display screen is formed, the product quality is ensured, the process flow of a supplier is saved, and the COB die bonder has revolutionary significance for industrial development.
Drawings
FIG. 1 is a schematic diagram of a COB die bonder according to the present invention;
FIG. 2 is a schematic diagram of a substrate arrangement of LEDs;
FIG. 3 illustrates a prior art die bonding step;
FIG. 4 shows the step of COB solidification balance method of the present invention followed by solidification.
Detailed Description
As shown in FIG. 1, the invention discloses a COB die bonder, which realizes a COB die bonder balance method.
The COB die bonder comprises a die bonding table, two die bonding heads and a plurality of wafer disks, wherein the two die bonding heads bond wafers in the wafer disks to a substrate (PCB) according to a certain sequential path.
The COB die bonder further comprises two swing arms, two swing arm driving mechanisms and a linear motor, wherein the swing arms are connected with the two swing arm driving mechanisms, the two swing arm driving mechanisms drive the two swing arms respectively, and the two die bonder heads are installed on the two swing arms respectively.
The plurality of crystal discs are symmetrically distributed on two sides of the crystal fixing platform, for example, two crystal discs, three crystal discs, four crystal discs and the like are respectively arranged on two sides of the crystal fixing platform.
The wafer disc is driven by a precise linear motor, so that the wafer disc can be quickly selected; a screw rod can be used, but the precision is not good enough for a linear motor, and the screw rod can be made as a low-cost scheme; automatic or manual reloading methods may be used and are not described in detail here.
The double-die bonder with double die bonder heads and double-machine vision can simultaneously operate one die bonder table, and the efficiency is 2 times that of a common die bonder.
The wafer disks are arranged on both sides, and mixed beating is supported. The COB crystal solidification balance method can solve the problem of uneven light mixing.
And a dynamic double-swing-arm scheduling algorithm ensures that die bonding can be carried out simultaneously on the left and the right without conflict.
The invention discloses a COB die bonding balance method, which comprises the steps of controlling a die bonding head to extract wafers in a plurality of wafer disks, then controlling the die bonding head to bond the extracted wafers on a substrate, and ensuring that wafers with different electrical parameters are fixed around each die bonding point during die bonding.
The COB die bonding balance method of the invention comprises two embodiments, which are described below.
As a first example of the COB die bonding balancing method: the first embodiment is based on each wafer disk having been factory screened and wafers of similar electrical parameters are placed in a single wafer disk.
At present, the light-emitting wavelength of the wafer in each wafer disc is similar, a supplier can screen before leaving a factory, and when the wafer is solidified, the problem of uneven mixed light can be basically realized only by mixing the wafers of different wafer discs according to a certain algorithm.
Wafers with similar electrical parameters refer to wafers with electrical parameters within a set range, such as: the emission wavelength, such as the theoretical wavelength of red light, is 650 nm, but some are 660,670,640, etc. due to process differences. If the wavelength of one disk is similar 640 and the wavelength of the other disk is similar 660, then without aliasing, a left block and a right block may be different in color when illuminated.
If the substrate has the following 2 pattern arrangement of LEDs (common electrodes use the same bonding pad, but different separate bonding pads are used to bond RGB three primary colors), 3 wafer disks on the left and right sides of the die attach table respectively, and 6 wafer disks are used, and 6 colors represent the wafer positions from the 6 wafer disks respectively.
Taking the R color of a 3 × 4 array as an example, first fix 6R wafer disks in place, and then ensure that the R position of each die bonding point comes from different wafer disks, for example, 6 wafer disks are respectively represented by black, gray, orange, green, purple, and cyan, as long as it is ensured that the upper row of the die bonding points is a repetition of black, gray, orange, black, gray, and orange, and the lower row is a repetition of green, purple, cyan, green, purple, and cyan, so that wafers with different wavelengths are all around each die bonding point, and there is no large color difference when a large LED display screen is formed.
After the arrangement mode is determined, 6 wafer disc coordinates are respectively input into a computer and programmed, and a COB die bonder performs die bonding according to the arrangement mode.
The first embodiment of the COB die bonding balancing method can be applied to 2, 4 or other numbers of wafer disks, and die bonding can be performed only by changing different computer programs.
The first embodiment of the COB die bonding balance method is also applicable to the mounting of single color LED wafers.
As a second example of the COB die bonding balancing method: the second embodiment is based on the fact that each wafer disk is not screened by a manufacturer, but after the manufacturer tests, generally speaking, the manufacturer who manufactures the LED lamp beads needs to go through the steps of fig. 3 to distribute and die bond the LED lamp beads.
As shown in fig. 4, after the second embodiment of the present invention is used, the sorting and braiding process is omitted, thereby greatly increasing the production efficiency.
The second example of the COB die bonding balancing method is implemented as follows:
when the supplier sorts the LED wafers, a mapping table is generated, the table defines the electrical parameters of each wafer, and then the wafers are combined into a wafer disc, and the wafer disc corresponds to the mapping table.
The COB die bonder uses 2, 4, 6 or more bilaterally symmetrical wafer disks, and only a mapping table corresponding to each different wafer disk is input into a computer, so that a computer control program can identify electrical parameters corresponding to each wafer in each wafer disk.
And according to the electrical parameters of each wafer, carrying out die bonding by the computer control program according to the principle that adjacent points cannot use the same parameters when carrying out die bonding. Because the mapping table corresponds to the electrical parameters, the program can easily fix the wafers with different parameters at different die bonding points.
The principle that adjacent points cannot use the same parameters may not be satisfied at one time, and after a wafer disc is replaced for several times, a program carries out certain fault tolerance correction on the principle, so that the die bonding principle can be perfected in the past.
The second embodiment of the COB die bonding balance method can realize mixing and beating in a real sense, simultaneously saves the process flow of suppliers, and has revolutionary significance for industry development.
The invention also discloses a COB die bonding balance system, which comprises:
a wafer extraction module: the wafer fixing head is used for controlling the wafer fixing head to extract wafers from the plurality of wafer disks;
a die bonding module: the wafer fixing device is used for controlling the wafer fixing head to fix the extracted wafer on the substrate, fixing welding spot positions during wafer fixing, and ensuring that wafers with different electrical parameters are fixed around each wafer fixing point by the computer according to a certain algorithm.
In the COB die bonding balance system, aiming at the condition that each wafer disk is screened by a manufacturer, namely the wafers with similar electrical parameters are placed in one wafer disk, the wafer light-emitting wavelength in each wafer disk is similar, firstly, a plurality of wafer disks are fixed in place and recorded in sequence, and then, when die bonding is carried out, the wafers above, below, left and right of each die bonding point are ensured to come from different wafer disks, so that the wafers with different wavelengths are arranged around each die bonding point.
In the COB die bonding balance system, aiming at the condition that each wafer disk is not screened by a manufacturer, each wafer disk corresponds to one mapping table, the mapping table defines the electrical parameters of each wafer in the wafer disk, the mapping table is input into a computer control program, the computer control program can identify the electrical parameters corresponding to each wafer in each wafer disk, and during die bonding, the computer control program controls the die bonding head to fix the wafers with different electrical parameters at different die bonding points.
The COB die bonder adopts a COB die bonding balance method, so that great chromatic aberration is avoided when a large LED display screen is formed, the product quality is ensured, the process flow of a supplier is saved, and the COB die bonder has revolutionary significance for industrial development.
The foregoing is a more detailed description of the invention in connection with specific preferred embodiments and it is not intended that the invention be limited to these specific details. For those skilled in the art to which the invention pertains, several simple deductions or substitutions can be made without departing from the spirit of the invention, and all shall be considered as belonging to the protection scope of the invention.
Claims (10)
1. A COB die bonding balance method is characterized in that a die bonding head is controlled to extract wafers in a plurality of wafer disks, then the die bonding head is controlled to bond the extracted wafers on a substrate, and wafers with different electrical parameters are fixed around each die bonding point during die bonding.
2. The COB die bonding balance method according to claim 1, wherein for the condition that each wafer disc has been subjected to factory screening, that is, wafers with similar electrical parameters are placed in one wafer disc, the wafer light-emitting wavelength inside each wafer disc is similar, a plurality of wafer discs are fixed in place firstly, and then during die bonding, it is ensured that wafers above, below, to the left and to the right of each die bonding point come from different wafer discs, so that wafers with different wavelengths are around each die bonding point; wafers with similar electrical parameters refer to wafers with electrical parameters within a set range.
3. The COB die bonding balancing method of claim 1, wherein, for a case that each wafer disk is not subjected to factory screening, each wafer disk corresponds to a mapping table, the mapping table defines electrical parameters of each wafer in the wafer disk, the mapping table is input into a computer control program, the computer control program can identify the electrical parameters corresponding to each wafer in each wafer disk, and during die bonding, the computer control program controls the die bonding head to bond the wafers with different electrical parameters at different die bonding points, so that the wafers with different wavelengths around each die bonding point are all wafers with different wavelengths.
4. The COB die bonding balancing method according to any one of claims 1 to 3, wherein the number of the die bonding heads is two.
5. A COB die bonding balance system is characterized by comprising:
a wafer extraction module: the wafer fixing head is used for controlling the wafer fixing head to extract wafers from the plurality of wafer disks;
a die bonding module: the wafer fixing device is used for controlling the wafer fixing head to fix the extracted wafer on the substrate, fixing welding spot positions during wafer fixing, and ensuring that wafers with different electrical parameters are fixed around each wafer fixing point by the computer according to a certain algorithm.
6. The COB die bonding balance system of claim 5, wherein for the situation that each wafer disk is screened by a manufacturer, namely wafers with similar electrical parameters are placed in one wafer disk, the wafer light-emitting wavelength inside each wafer disk is similar, a plurality of wafer disks are firstly fixed in place and recorded in sequence, and then during die bonding, wafers above, below, left and right of each die bonding point are ensured to come from different wafer disks, so that wafers with different wavelengths are around each die bonding point.
7. The COB die bonding balance system of claim 5, wherein, for a case that each wafer disk is not subjected to factory screening, each wafer disk corresponds to a mapping table, the mapping table defines electrical parameters of each wafer in the wafer disk, the mapping table is input into a computer control program, the computer control program can identify the electrical parameters corresponding to each wafer in each wafer disk, and during die bonding, the computer control program controls the die bonding head to bond wafers with different electrical parameters at different die bonding points.
8. The COB die bonding balance system according to any one of claims 5 to 7, wherein the number of the die bonding heads is two.
9. A COB die bonder is characterized by comprising a die bonder table, two die bonder heads and a plurality of die discs, wherein the die bonder tables are distributed on two sides of the die bonder table, the two die bonder heads are positioned on two sides of the die bonder table, wafers are arranged in the die discs, the die bonder heads are used for bonding the wafers in the die discs to a substrate placed on the die bonder table, and the COB die bonder is provided with the COB die bonder balance system according to any one of claims 5 to 8.
10. The COB die bonder according to claim 9, further comprising two swing arms, two swing arm driving mechanisms, and a linear motor, wherein the two swing arms are connected to the two swing arm driving mechanisms, the two swing arm driving mechanisms respectively drive the two swing arms to swing, the two die bonder heads are respectively mounted on the two swing arms, and the linear motor drives the wafer disk to move.
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| CN202010761067.2A CN111863669A (en) | 2020-07-31 | 2020-07-31 | COB die bonding balance method and system and COB die bonding machine |
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| CN202010761067.2A CN111863669A (en) | 2020-07-31 | 2020-07-31 | COB die bonding balance method and system and COB die bonding machine |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN113539913A (en) * | 2021-06-18 | 2021-10-22 | 深圳市卓兴半导体科技有限公司 | Die bonding equipment and die bonding method |
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| CN103133920A (en) * | 2011-11-30 | 2013-06-05 | 台积固态照明股份有限公司 | Cost-effective LED lighting instrument with good light output uniformity |
| CN107331678A (en) * | 2017-06-16 | 2017-11-07 | 长春希达电子技术有限公司 | The integrated LED display module chip shuffling method for packing of colourity difference can be eliminated |
| CN111326612A (en) * | 2018-12-17 | 2020-06-23 | 台湾爱司帝科技股份有限公司 | Layout method for mixing and assembling LED chips of different grades and display device |
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2020
- 2020-07-31 CN CN202010761067.2A patent/CN111863669A/en active Pending
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103133920A (en) * | 2011-11-30 | 2013-06-05 | 台积固态照明股份有限公司 | Cost-effective LED lighting instrument with good light output uniformity |
| CN107331678A (en) * | 2017-06-16 | 2017-11-07 | 长春希达电子技术有限公司 | The integrated LED display module chip shuffling method for packing of colourity difference can be eliminated |
| CN111326612A (en) * | 2018-12-17 | 2020-06-23 | 台湾爱司帝科技股份有限公司 | Layout method for mixing and assembling LED chips of different grades and display device |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN113539913A (en) * | 2021-06-18 | 2021-10-22 | 深圳市卓兴半导体科技有限公司 | Die bonding equipment and die bonding method |
| WO2022262194A1 (en) * | 2021-06-18 | 2022-12-22 | 深圳市卓兴半导体科技有限公司 | Die bonding device and die bonding method |
| ES2974357A1 (en) * | 2021-06-18 | 2024-06-26 | Shenzhen Zhuoxing Semiconductor Tech Co Ltd | Die bonding device and die bonding method |
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Address after: 518000 1st floor, workshop beside Yousheng paper, Wenchuan Road, yingrenshi community, Shiyan street, Bao'an District, Shenzhen City, Guangdong Province Applicant after: Shenzhen Zhuoxing Semiconductor Technology Co.,Ltd. Address before: 518000 Room 101, building U2, Junxiang U8 Zhizao Industrial Park, Gushu community, Xixiang street, Bao'an District, Shenzhen City, Guangdong Province Applicant before: SHEN ZHEN TALUER TECHNOLOGY Co.,Ltd. |
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