CN111863600A - Method for increasing the adherence between a layer of solid material and a layer of fluid material - Google Patents
Method for increasing the adherence between a layer of solid material and a layer of fluid material Download PDFInfo
- Publication number
- CN111863600A CN111863600A CN201910359869.8A CN201910359869A CN111863600A CN 111863600 A CN111863600 A CN 111863600A CN 201910359869 A CN201910359869 A CN 201910359869A CN 111863600 A CN111863600 A CN 111863600A
- Authority
- CN
- China
- Prior art keywords
- layer
- solid material
- material layer
- fluid material
- oxygen plasma
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000000034 method Methods 0.000 title claims abstract description 77
- 239000011343 solid material Substances 0.000 title claims abstract description 74
- 239000000463 material Substances 0.000 title claims abstract description 73
- 239000012530 fluid Substances 0.000 title claims abstract description 61
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims abstract description 40
- 239000001301 oxygen Substances 0.000 claims abstract description 40
- 229910052760 oxygen Inorganic materials 0.000 claims abstract description 40
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims abstract description 20
- MYMOFIZGZYHOMD-UHFFFAOYSA-N Dioxygen Chemical compound O=O MYMOFIZGZYHOMD-UHFFFAOYSA-N 0.000 claims abstract description 16
- 229910001873 dinitrogen Inorganic materials 0.000 claims abstract description 16
- 229910001882 dioxygen Inorganic materials 0.000 claims abstract description 16
- 238000004519 manufacturing process Methods 0.000 claims abstract description 12
- 229920002120 photoresistant polymer Polymers 0.000 claims description 18
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 11
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 11
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 10
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 9
- 229910052710 silicon Inorganic materials 0.000 claims description 9
- 239000010703 silicon Substances 0.000 claims description 9
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 8
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 6
- 229920005591 polysilicon Polymers 0.000 claims description 6
- 230000003667 anti-reflective effect Effects 0.000 claims description 5
- 238000000059 patterning Methods 0.000 claims description 3
- 239000010410 layer Substances 0.000 description 112
- 239000000758 substrate Substances 0.000 description 12
- 239000007789 gas Substances 0.000 description 8
- 239000004065 semiconductor Substances 0.000 description 6
- 238000005530 etching Methods 0.000 description 5
- 239000002356 single layer Substances 0.000 description 4
- 230000003247 decreasing effect Effects 0.000 description 3
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 2
- 230000007547 defect Effects 0.000 description 2
- 230000002950 deficient Effects 0.000 description 2
- 239000001257 hydrogen Substances 0.000 description 2
- 229910052739 hydrogen Inorganic materials 0.000 description 2
- 229910052757 nitrogen Inorganic materials 0.000 description 2
- 239000006117 anti-reflective coating Substances 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000001259 photo etching Methods 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 230000003746 surface roughness Effects 0.000 description 1
- 239000002699 waste material Substances 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
- H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
- H01L21/0273—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers
- H01L21/0274—Photolithographic processes
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Drying Of Semiconductors (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
Abstract
The invention discloses a method for increasing the adhesiveness between a solid material layer and a fluid material layer, which comprises the steps of providing the solid material layer, carrying out an oxygen plasma manufacturing process on the solid material layer to increase the surface flatness of the solid material layer, wherein the operating conditions of the oxygen plasma manufacturing process comprise inputting oxygen gas and nitrogen gas, the flow rate of the oxygen gas is 6000 to 8000 standard milliliters per minute, the flow rate of the nitrogen gas is 600 to 1000 standard milliliters per minute, and finally, after the oxygen plasma manufacturing process, a fluid material layer is formed to be directly contacted with the surface of the solid material layer.
Description
Technical Field
The present invention relates to a method of increasing adhesion between a layer of solid material and a layer of fluid material, and in particular to a method of forming a mask material prior to use in a lithographic fabrication process.
Background
The semiconductor integrated circuit industry has experienced exponential growth, and technological advances in integrated circuit materials and design have created generations of integrated circuits, each with smaller and more complex circuits than the previous generation. In the evolution of integrated circuits, device density is increasing and device size is decreasing, and the decreasing process generally increases production efficiency and reduces waste associated therewith, increasing process and production complexity.
One of the popular applications of the photolithography process, which is a conventional method for transferring a pattern of an integrated circuit onto a semiconductor substrate, is to perform exposure during the manufacture of semiconductor devices to define a pattern or image, which can manufacture Integrated Circuits (ICs) and other semiconductor devices by forming shapes or patterns of various layers having various electrical, physical, or chemical characteristics.
The quality of the photoresist pattern directly affects the final quality of the integrated circuit during the lithographic fabrication process. However, in the conventional photoresist, gas holes are often formed in the photoresist, resulting in uneven surface of the photoresist, and the integrated circuit formed after etching has defects due to the gas holes.
Disclosure of Invention
According to a preferred embodiment of the present invention, a method for increasing the adhesion between a solid material layer and a fluid material layer comprises providing a solid material layer, performing an oxygen plasma process on the solid material layer to increase the surface flatness of the solid material layer, wherein the oxygen plasma process is performed under conditions comprising feeding oxygen gas and nitrogen gas, wherein the oxygen gas flow rate is 6000 to 8000 ml/min, and the nitrogen gas flow rate is 600 to 1000 ml/min, and finally forming a fluid material layer directly contacting the surface of the solid material layer after the oxygen plasma process.
According to another preferred embodiment of the present invention, a method of increasing the adherence between a layer of solid material and a layer of fluid material consists solely of the following steps: providing a layer of solid material, step (b): performing an oxygen plasma process on the solid material layer, wherein the operating conditions of the oxygen plasma process include inputting oxygen gas and nitrogen gas, the oxygen gas flow rate is 6000 to 8000 standard milliliters per minute and the nitrogen gas flow rate is 600 to 1000 standard milliliters per minute, and the step (c): after step (b), forming a layer of fluid material in direct contact with the surface of the layer of solid material.
In order to make the aforementioned objects, features and advantages of the present invention comprehensible, preferred embodiments accompanied with figures are described in detail below. However, the following preferred embodiments and the accompanying drawings are only for reference and illustration purposes and are not intended to limit the present invention.
Drawings
FIG. 1 is a flow chart of a method of increasing adherence between a layer of solid material and a layer of fluid material in accordance with the present invention;
fig. 2 to 6 are schematic views illustrating a method for increasing the adhesion between a solid material layer and a fluid material layer and etching a substrate according to a first preferred embodiment of the present invention;
Fig. 7 to 8 are schematic views illustrating a method for increasing the adhesion between a solid material layer and a fluid material layer according to a second preferred embodiment of the present invention;
fig. 9 to 10 are schematic views illustrating a method for increasing the adhesion between the solid material layer and the fluid material layer according to a third preferred embodiment of the present invention.
Description of the main elements
1 step 2 step
3 step 10 substrate
12 solid material layer 14 pad silica
16 pad silicon nitride 18 oxygen plasma system
Making process
20 fluid material layer 21 mask material
22 organic dielectric layer 24 silicon-containing hardmask
26 photoresist 100 chamber
112 solid material layer 118 oxygen plasma system
Making process
120 fluid material layer 200 chamber
212 solid material layer 218 oxygen plasma system
Making process
220 fluid material layer 300 chamber
400 chamber 500 chamber
600 chamber 700 chamber
Detailed Description
In a semiconductor fabrication process, a layer of fluid material (e.g., photoresist) is formed over a layer of solid material (e.g., substrate) prior to a photolithographic fabrication process, and then exposed to a stepper to define a pattern in the photoresist. However, due to the poor hydrophilicity of the surface of the solid material layer, the fluid material layer cannot be attached to the surface of the solid material layer, so that gas holes are formed in or on the surface of the fluid material layer, resulting in uneven surface of the fluid material layer, which affects the integrity of the pattern defined on the fluid material layer.
Thus, the present invention provides a method for increasing the adhesion between a solid material layer and a fluid material layer to avoid the formation of gas holes, and fig. 1 is a flow chart illustrating the method for increasing the adhesion between a solid material layer and a fluid material layer according to the present invention. As shown in fig. 1, the method for increasing the adhesion between the solid material layer and the fluid material layer of the present invention comprises three steps, firstly performing step 1 to provide a solid material layer, and then performing step 2, performing an oxygen plasma process on the uppermost solid material layer in the first chamber to improve the surface hydrophilicity of the solid material layer, wherein the oxygen plasma process is performed under the operating conditions including inputting oxygen gas and nitrogen gas, the oxygen gas flow rate is 6000 to 8000 Standard milliliters per Minute (sccm) and the nitrogen gas flow rate is 600 to 1000 Standard milliliters per Minute (torr), the operating pressure is 1 to 2 torr, the operating power is 600 to 2500 watts (watt), and the operating temperature is 100 to 250 ℃. In accordance with a preferred embodiment of the present invention, the oxygen gas flow rate of the oxygen plasma process is preferably 7000 standard milliliters per minute. According to another preferred embodiment of the present invention, the nitrogen gas flow rate is preferably 800 standard milliliters per minute. According to another preferred embodiment of the invention, the operating pressure is preferably 1 torr. According to another preferred embodiment of the present invention, the operating temperature is preferably 250 ℃. It is noted that during the oxygen plasma process, no hydrogen and no nitrogen are introduced into the first chamber Gas mixture (H)2N2) The first chamber also does not contain a mixed gas of hydrogen and nitrogen. In addition, in the oxygen plasma process, the oxygen flow rate is required to be less than 8000 ml/min, and if the oxygen flow rate is higher than 8000 ml/min, an unexpected oxide layer, such as an oxide layer with a thickness greater than 50 nm, is generated, which affects the profile of the final device.
After step 2 is completed, in the second chamber, step 3 is performed to form a surface of the fluid material layer directly contacting the solid material layer. According to a preferred embodiment of the present invention, the first chamber in step 2 and the second chamber in step 3 may be the same chamber. According to another preferred embodiment of the present invention, the first chamber in step 2 and the second chamber in step 3 may be different chambers, for example, different chambers in the same machine. The method for increasing the adhesion between the solid material layer and the fluid material layer is completed, then the fluid material layer is baked in the third chamber to solidify the fluid material layer and then transform the fluid material layer into the mask material, then the photoetching process is carried out in the fourth chamber to define the pattern on the mask material, then the solid material layer and the mask material are sent into other chambers to carry out the developing process, and finally the patterned mask material is used as the mask to etch the solid material layer. According to a preferred embodiment of the present invention, the first chamber, the second chamber, the third chamber and the fourth chamber may be the same chamber, and according to another preferred embodiment of the present invention, the first chamber, the second chamber, the third chamber and the fourth chamber are different chambers.
The present invention is intended to perform an oxygen plasma forming process on the uppermost solid material layer before forming the fluid material layer, and after the oxygen plasma forming process, the hydrophilicity and surface flatness (smoothness) of the uppermost solid material layer are increased, and a contact angle of the fluid material layer to the solid material layer is decreased as compared with a case where the oxygen plasma forming process is not performed, so that the fluid material layer can be more preferably attached to the solid material layer and gas holes do not exist in the fluid material layer.
For example, the solid material layer may be silicon oxide, silicon nitride, polysilicon, a dielectric layer or an Advanced Patterning Film (APF), and the solid material layer may be a single layer or multiple layers, such as polysilicon, silicon oxide and silicon nitride, which are stacked in sequence from bottom to top, or a single layer of polysilicon.
The fluid material layer may be a bottom anti-reflective coating (BARC), an Organic Dielectric Layer (ODL), a silicon-containing hard mask (SHB), or a photoresist. The fluid material layer may also be a single layer or multiple layers, such as an organic dielectric layer, a silicon-containing hard mask and a photoresist, which are sequentially stacked from bottom to top, or a single layer of photoresist.
Several preferred embodiments of the present invention will be enumerated below to illustrate the practice of the present invention.
Fig. 2 to 6 illustrate a method for increasing the adhesion between a solid material layer and a fluid material layer and etching a substrate according to a first preferred embodiment of the present invention. According to a first preferred embodiment of the present invention, as shown in FIG. 2, a semiconductor substrate 10, such as a silicon substrate, is first provided in chamber 100, and then a solid material layer 12 is formed to cover and contact the substrate 10, the solid material layer 12 being a pad of silicon oxide 14 and a pad of silicon nitride 16 in sequence from bottom to top. Then, in chamber 100, an oxygen plasma process 18 is performed on the uppermost layer 12 of solid material, i.e., the pad silicon nitride 16 is subjected to the oxygen plasma process 18, wherein the operating conditions of the oxygen plasma process 18 include inputting oxygen gas and nitrogen gas, the oxygen gas flow rate is 6000 to 8000 standard milliliters per minute, the nitrogen gas flow rate is 600 to 1000 standard milliliters per minute, the operating pressure is 1 to 2 torr, the operating power is 600 to 2500 watts, and the operating temperature is 100 to 250 ℃. The oxygen gas flow rate of the oxygen plasma process 18 is preferably 7000 standard milliliters per minute, the nitrogen gas flow rate is preferably 800 standard milliliters per minute, the operating pressure is preferably 1 torr, and the operating temperature is preferably 250 degrees celsius. After the oxygen plasma process 18, the surface roughness of the pad silicon nitride 16 is reduced, i.e., the surface is planarized, and the hydrophilicity is increased, so that the contact angle of the fluid material layer to be subsequently formed on the pad silicon nitride 16 is reduced.
As shown in fig. 3, after the oxygen plasma process 18, the fluid material layer 20 is formed in the chamber 200 by a spin-on process, wherein the fluid material layer 20 comprises, in this embodiment, the organic dielectric layer 22, the silicon-containing hard mask 24 and the photoresist 26 in this order from bottom to top, so that the method for increasing the adhesion between the solid material layer 12 and the fluid material layer 20 has been completed. The fluid material layer 20 is then hardened into a mask material 21 (not shown) by a baking process. As shown in fig. 4, the photoresist 26 in the mask material 21 is patterned in the chamber 300 by an exposure process, and in detail, the pattern of the mask 28 is transferred to the photoresist 26 (the position of the transferred pattern is shown by a dotted line). In this embodiment, the chamber 300 may be a further (scanner) chamber. According to a preferred embodiment of the present invention, the chamber 100, the chamber 200 and the chamber 300 are the same chamber. According to another preferred embodiment of the present invention, the chambers 100, 200 and 300 are different chambers, such as different chambers in the same machine.
As shown in fig. 5, the substrate 10, the solid material layer 12 and the mask material 21 are removed from the chamber 300, and then a developing process of the photoresist 26 is performed, and then the silicon-containing hard mask 24 and the organic dielectric layer 22 (not shown) are etched using the photoresist 26 as a mask, and then the pad silicon nitride 16 and the pad silicon oxide 14 are etched using the organic dielectric layer 22 and the silicon-containing hard mask 24 as a mask. As shown in fig. 6, the substrate 10 is etched using the pad silicon nitride 16 and the pad silicon oxide 14 as masks. Since the oxygen plasma process 18 is performed before the fluid material layer 20 is formed, the fluid material layer 20 formed subsequently has no gas holes and is flat, so that the pattern transferred onto the substrate 10 later will not be defective due to defects on the fluid material layer 20, resulting in a defective pattern on the final substrate 10.
Fig. 7 to 8 illustrate a method for increasing the adhesion between a solid material layer and a fluid material layer according to a second preferred embodiment of the present invention. According to a second preferred embodiment of the present invention, as shown in fig. 7, a solid material layer 112, such as polysilicon, is provided in the chamber 400, and then an oxygen plasma process 118 is performed on the solid material layer 112, wherein the operating conditions and ranges of the oxygen plasma process 118 are as described above and will not be described herein again. As shown in fig. 8, a fluid material layer 120, such as photoresist, is formed in the chamber 500 in direct contact with the solid material layer 112. The subsequent steps of baking the fluid material layer 120, patterning the mask material, and etching the solid material layer 112 are the same as those in the first preferred embodiment, and are not repeated herein. According to a preferred embodiment of the present invention, the chamber 400 and the chamber 500 are the same chamber. According to another preferred embodiment of the present invention, the chamber 400 and the chamber 500 are different chambers.
Fig. 9 to 10 illustrate a method for increasing the adhesion between a solid material layer and a fluid material layer according to a third preferred embodiment of the present invention. According to a third preferred embodiment of the present invention, as shown in fig. 9, a solid material layer 212, such as a silicon oxide layer, is provided in the chamber 600, and then an oxygen plasma process 218 is performed on the solid material layer 212, wherein the operating conditions and ranges of the oxygen plasma process 212 are as described above and will not be described herein. As shown in fig. 10, a fluid material layer 220, such as a bottom anti-reflective layer, is formed in the chamber 700 to directly contact the solid material layer 212. The subsequent steps of baking the fluid material layer 220 to pattern the mask material and etching the solid material layer 212 are the same as those in the first preferred embodiment, and are not repeated herein. According to a preferred embodiment of the present invention, the chamber 600 and the chamber 700 are the same chamber. According to another preferred embodiment of the present invention, the chamber 600 and the chamber 700 are different chambers.
The above description is only a preferred embodiment of the present invention, and all equivalent changes and modifications made in the claims of the present invention should be covered by the present invention.
Claims (10)
1. A method of increasing adherence between a layer of solid material and a layer of fluid material, comprising:
providing a layer of solid material;
performing an oxygen plasma process on the solid material layer, wherein the operating conditions of the oxygen plasma process include inputting oxygen gas and nitrogen gas, the oxygen gas flow rate is between 6000 and 8000 standard milliliters per minute, and the nitrogen gas flow rate is between 600 and 1000 standard milliliters per minute; and
after the oxygen plasma fabrication process, a fluid material layer is formed to directly contact a surface of the solid material layer.
2. The method of claim 1, wherein the solid material layer comprises silicon oxide, silicon nitride, polysilicon, a dielectric layer or an advanced exposure pattern film.
3. The method for increasing adhesion between a layer of solid material and a layer of fluid material according to claim 1, wherein the layer of fluid material comprises a bottom antireflective layer, an organic dielectric layer, a silicon-containing hardmask bottom antireflective layer, or a photoresist.
4. The method of claim 1, wherein the hydrophilicity of the surface of the solid material layer increases after the oxygen plasma forming process.
5. The method of claim 1, wherein the oxygen plasma process is performed at a temperature of 100 to 250 degrees celsius and at a pressure of 1 to 2 torr.
6. The method of claim 1, wherein the oxygen plasma forming process and the step of forming the fluid material layer are performed in the same chamber.
7. A method of increasing adherence between a layer of solid material and a layer of fluid material consisting of only the steps of:
step (a): providing a layer of solid material;
step (b): performing an oxygen plasma process on the solid material layer, wherein the operating conditions of the oxygen plasma process include inputting oxygen gas and nitrogen gas, the oxygen gas flow rate is between 6000 to 8000 standard milliliters per minute and the nitrogen gas flow rate is between 600 to 1000 standard milliliters per minute; and
step (c): after step (b), forming a layer of fluid material in direct contact with a surface of the layer of solid material.
8. The method of increasing adhesion between a layer of solid material and a layer of fluid material as claimed in claim 7, wherein the layer of solid material comprises silicon oxide, silicon nitride, polysilicon, a dielectric layer or an advanced exposure patterning film.
9. The method for increasing adhesion between a layer of solid material and a layer of fluid material as recited in claim 7, wherein the layer of fluid material comprises a bottom antireflective layer, an organic dielectric layer, a silicon-containing hardmask bottom antireflective layer, or a photoresist.
10. The method for increasing adherence between a layer of solid material and a layer of fluid material according to claim 7, wherein steps (b) and (c) are performed in the same chamber.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201910359869.8A CN111863600A (en) | 2019-04-30 | 2019-04-30 | Method for increasing the adherence between a layer of solid material and a layer of fluid material |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201910359869.8A CN111863600A (en) | 2019-04-30 | 2019-04-30 | Method for increasing the adherence between a layer of solid material and a layer of fluid material |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN111863600A true CN111863600A (en) | 2020-10-30 |
Family
ID=72965562
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201910359869.8A Pending CN111863600A (en) | 2019-04-30 | 2019-04-30 | Method for increasing the adherence between a layer of solid material and a layer of fluid material |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN111863600A (en) |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4176003A (en) * | 1978-02-22 | 1979-11-27 | Ncr Corporation | Method for enhancing the adhesion of photoresist to polysilicon |
| US20030059550A1 (en) * | 2001-09-25 | 2003-03-27 | Jsr Corporation | Method of film formation, insulating film, and substrate for semiconductor |
| US6677251B1 (en) * | 2002-07-29 | 2004-01-13 | Taiwan Semiconductor Manufacturing Co., Ltd | Method for forming a hydrophilic surface on low-k dielectric insulating layers for improved adhesion |
| CN1564876A (en) * | 2001-10-02 | 2005-01-12 | 株式会社先端技术培育系统 | Thin metal oxide film and process for producing the same |
| CN106292186A (en) * | 2016-10-10 | 2017-01-04 | 上海华力微电子有限公司 | A kind of photoetching method |
-
2019
- 2019-04-30 CN CN201910359869.8A patent/CN111863600A/en active Pending
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4176003A (en) * | 1978-02-22 | 1979-11-27 | Ncr Corporation | Method for enhancing the adhesion of photoresist to polysilicon |
| US20030059550A1 (en) * | 2001-09-25 | 2003-03-27 | Jsr Corporation | Method of film formation, insulating film, and substrate for semiconductor |
| CN1564876A (en) * | 2001-10-02 | 2005-01-12 | 株式会社先端技术培育系统 | Thin metal oxide film and process for producing the same |
| US6677251B1 (en) * | 2002-07-29 | 2004-01-13 | Taiwan Semiconductor Manufacturing Co., Ltd | Method for forming a hydrophilic surface on low-k dielectric insulating layers for improved adhesion |
| CN106292186A (en) * | 2016-10-10 | 2017-01-04 | 上海华力微电子有限公司 | A kind of photoetching method |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US9934971B2 (en) | Method of forming an integrated circuit using a patterned mask layer | |
| US7659208B2 (en) | Method for forming high density patterns | |
| US8673544B2 (en) | Method of forming openings | |
| US7709396B2 (en) | Integral patterning of large features along with array using spacer mask patterning process flow | |
| TWI628715B (en) | Feature size reduction | |
| TWI479565B (en) | The formation of fine graphics | |
| TW201937575A (en) | Method of spacer-defined direct patterning in semiconductor fabrication | |
| TWI406105B (en) | Double exposure patterning with carbonaceous hardmask | |
| WO2012128843A2 (en) | Improved sidewall image transfer process | |
| TW201923834A (en) | Method of forming semiconductor structure | |
| KR100849190B1 (en) | Method for forming fine pattern in semiconductor device | |
| KR20100134418A (en) | Method for forming contact hole using spacer patterning technology | |
| CN103390551B (en) | The manufacture method of semiconductor device pattern structure | |
| CN109950140B (en) | Method for forming self-aligned double-layer pattern | |
| JP2010087300A (en) | Method of manufacturing semiconductor device | |
| US20090246954A1 (en) | Method of manufacturing semiconductor device | |
| US20070161255A1 (en) | Method for etching with hardmask | |
| JP2011071279A (en) | Method of fabricating semiconductor device | |
| KR20190127585A (en) | Critical dimension trimming method designed to minimize line width roughness and line edge roughness | |
| JP5164446B2 (en) | Method for forming fine pattern of semiconductor element | |
| CN111863600A (en) | Method for increasing the adherence between a layer of solid material and a layer of fluid material | |
| JP2001230233A (en) | Method for manufacturing semiconductor device | |
| CN112951718A (en) | Semiconductor structure and forming method thereof | |
| KR20090066840A (en) | Method for manufacturing semiconductor device | |
| JPS63258020A (en) | Formation of element isolation pattern |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| RJ01 | Rejection of invention patent application after publication | ||
| RJ01 | Rejection of invention patent application after publication |
Application publication date: 20201030 |