CN111863600A - Method for increasing adhesion between a layer of solid material and a layer of fluid material - Google Patents

Method for increasing adhesion between a layer of solid material and a layer of fluid material Download PDF

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CN111863600A
CN111863600A CN201910359869.8A CN201910359869A CN111863600A CN 111863600 A CN111863600 A CN 111863600A CN 201910359869 A CN201910359869 A CN 201910359869A CN 111863600 A CN111863600 A CN 111863600A
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layer
solid material
material layer
fluid material
oxygen plasma
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魏*伦
魏伦
王福金
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United Semi Integrated Circuit Manufacture Xiamen Co ltd
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
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    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
    • H01L21/0273—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers
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Abstract

本发明公开一种增加固体材料层和流体材料层之间贴附性的方法，包含提供一固体材料层，对固体材料层进行一氧等离子体制作工艺，以增加固体材料层的表面平坦度，其中氧等离子体制作工艺的操作条件包含输入氧气体和氮气体，氧气体流量介于6000至8000每分钟标准毫升，氮气体流量介于600至1000每分钟标准毫升，最后在氧等离子体制作工艺后，形成一流体材料层直接接触固体材料层的表面。

Figure 201910359869

The invention discloses a method for increasing the adhesion between a solid material layer and a fluid material layer, which includes providing a solid material layer and performing an oxygen plasma manufacturing process on the solid material layer to increase the surface flatness of the solid material layer, The operating conditions of the oxygen plasma production process include inputting oxygen gas and nitrogen gas, the oxygen gas flow rate is between 6000 and 8000 standard milliliters per minute, and the nitrogen gas flow rate is between 600 and 1000 standard milliliters per minute. Finally, in the oxygen plasma production process Thereafter, a layer of fluid material is formed that directly contacts the surface of the layer of solid material.

Figure 201910359869

Description

增加固体材料层和流体材料层之间贴附性的方法Method for increasing adhesion between a layer of solid material and a layer of fluid material

技术领域technical field

本发明涉及一种增加固体材料层和流体材料层之间贴附性的方法，特别是涉及用于光刻制作工艺之前形成掩模材料的方法。The present invention relates to a method for increasing the adhesion between a layer of solid material and a layer of fluid material, and in particular to a method for forming a mask material prior to a lithographic fabrication process.

背景技术Background technique

半导体集成电路工业历经了指数性的成长，集成电路材料及设计的技术发展已创造了数代集成电路，每一代都有比上一代更小且更复杂的电路。集成电路的演化的过程中，元件密度不断提升，而元件尺寸则不断缩小，尺寸缩小的制作工艺一般提供了生产效率的提升以及减少相关的浪费，增加了制作工艺及生产的复杂性。The semiconductor integrated circuit industry has experienced exponential growth, and technological advances in integrated circuit materials and design have created generations of integrated circuits, each with smaller and more complex circuits than the previous generation. During the evolution of integrated circuits, the density of components continues to increase, while the size of components continues to shrink. The reduced-size manufacturing process generally improves production efficiency and reduces related waste, increasing the complexity of the manufacturing process and production.

光刻制作工艺为一种用于将集成电路的图案转移至半导体基板上的传统方法，其普及应用之一为在半导体装置的制造期间执行曝光以定义图案或图像，其可通过形成具有各种电、物理或化学特性的各种层的形状或图案来制造集成电路(IC)和其他半导体装置。The lithographic fabrication process is a traditional method for transferring a pattern of an integrated circuit onto a semiconductor substrate, and one of its popular applications is performing exposure during the fabrication of a semiconductor device to define a pattern or image, which can be achieved by forming various The shape or pattern of various layers of electrical, physical or chemical properties to fabricate integrated circuits (ICs) and other semiconductor devices.

在光刻制作工艺中，光致抗蚀剂图案的品质直接影响了集成电路的最终品质。然而依照传统方式所形成的光致抗蚀剂，光致抗蚀剂内部经常出现气体孔洞，造成光致抗蚀剂表面不平整，在蚀刻之后所形成的集成电路，则会因为气体孔洞导致集成电路结构上的缺陷。In the photolithography process, the quality of the photoresist pattern directly affects the final quality of the integrated circuit. However, in the photoresist formed by the traditional method, gas holes often appear inside the photoresist, resulting in uneven surface of the photoresist. The integrated circuits formed after etching will be integrated due to gas holes. Defects in circuit structure.

发明内容SUMMARY OF THE INVENTION

根据本发明的一优选实施例，一种增加固体材料层和流体材料层之间贴附性的方法，包含首先提供一固体材料层，对固体材料层进行一氧等离子体制作工艺，以增加固体材料层的表面平坦度，其中氧等离子体制作工艺的操作条件包含输入氧气体和氮气体，氧气体流量介于6000至8000每分钟标准毫升，氮气体流量介于600至1000每分钟标准毫升，最后在氧等离子体制作工艺后，形成一流体材料层直接接触固体材料层的表面。According to a preferred embodiment of the present invention, a method for increasing the adhesion between a solid material layer and a fluid material layer includes first providing a solid material layer, and performing an oxygen plasma fabrication process on the solid material layer to increase the solid The surface flatness of the material layer, wherein the operating conditions of the oxygen plasma production process include inputting oxygen gas and nitrogen gas, the flow rate of oxygen gas is between 6000 and 8000 standard milliliters per minute, and the flow rate of nitrogen gas is between 600 and 1000 standard milliliters per minute, Finally, after the oxygen plasma fabrication process, a fluid material layer is formed to directly contact the surface of the solid material layer.

根据本发明之另一优选实施例，一种增加固体材料层和流体材料层之间贴附性的方法，仅由以下步骤组成步骤(a)：提供一固体材料层，步骤(b)：对固体材料层进行一氧等离子体制作工艺，其中氧等离子体制作工艺的操作条件包含输入氧气体和氮气体，氧气体流量介于6000至8000每分钟标准毫升以及氮气体流量介于600至1000每分钟标准毫升，步骤(c)：在步骤(b)之后，形成一流体材料层直接接触固体材料层的表面。According to another preferred embodiment of the present invention, a method for increasing the adhesion between a layer of solid material and a layer of fluid material consists only of the following steps: step (a): providing a layer of solid material, step (b): pairing The solid material layer is subjected to an oxygen plasma production process, wherein the operating conditions of the oxygen plasma production process include inputting oxygen gas and nitrogen gas, the oxygen gas flow rate is between 6000 and 8000 standard milliliters per minute, and the nitrogen gas flow rate is between 600 and 1000 per minute. Minute standard milliliter, step (c): After step (b), a layer of fluid material is formed to directly contact the surface of the layer of solid material.

为让本发明的上述目的、特征及优点能更明显易懂，下文特举优选实施方式，并配合所附的附图，作详细说明如下。然而如下的优选实施方式与附图仅供参考与说明用，并非用来对本发明加以限制者。In order to make the above-mentioned objects, features and advantages of the present invention more clearly understood, preferred embodiments are exemplified below, and are described in detail as follows in conjunction with the accompanying drawings. However, the following preferred embodiments and accompanying drawings are only for reference and description, and are not intended to limit the present invention.

附图说明Description of drawings

图1为本发明增加固体材料层和流体材料层之间贴附性的方法的流程图；Fig. 1 is the flow chart of the method for increasing the adhesion between the solid material layer and the fluid material layer of the present invention;

图2至图6为本发明的第一优选实施例所绘示的增加固体材料层和流体材料层之间贴附性以及蚀刻基底的方法的示意图；2 to 6 are schematic diagrams of the method for increasing the adhesion between the solid material layer and the fluid material layer and for etching the substrate according to the first preferred embodiment of the present invention;

图7至图8为本发明的第二优选实施例所绘示的增加固体材料层和流体材料层之间贴附性的方法的示意图；7 to 8 are schematic diagrams of the method for increasing the adhesion between the solid material layer and the fluid material layer according to the second preferred embodiment of the present invention;

图9至图10为本发明的第三优选实施例所绘示的增加固体材料层和流体材料层之间贴附性的方法的示意图。9 to 10 are schematic diagrams of a method for increasing the adhesion between a solid material layer and a fluid material layer according to a third preferred embodiment of the present invention.

主要元件符号说明Description of main component symbols

1 步骤 2 步骤1 step 2 step

3 步骤 10 基底3 Step 10 Substrate

12 固体材料层 14 垫氧化硅12 Solid material layer 14 Pad silicon oxide

16 垫氮化硅 18 氧等离子体制16 Pad Silicon Nitride 18 Oxygen Plasma

作工艺 craft

20 流体材料层 21 掩模材料20 Fluid Material Layer 21 Mask Material

22 有机介电层 24 含硅硬掩模22 Organic Dielectric Layer 24 Silicon Hardmask

26 光致抗蚀剂 100 腟室26 Photoresist 100 Chambers

112 固体材料层 118 氧等离子体制112 Solid material layer 118 Oxygen plasma system

作工艺 craft

120 流体材料层 200 腟室120 Fluid Material Layer 200 Chamber

212 固体材料层 218 氧等离子体制212 Solid material layer 218 Oxygen plasma system

作工艺 craft

220 流体材料层 300 腟室220 Fluid Material Layer 300 Chamber

400 腟室 500 腟室400 sanctuary 500 sanctuary

600 腟室 700 腟室600 sanctuary 700 sanctuary

具体实施方式Detailed ways

在半导体制作工艺中，进行光刻制作工艺之前，需要形成流体材料层(例如光致抗蚀剂)在固体材料层(例如基底)上方，之后经过步进机的曝光以在光致抗蚀剂上定义图案。然而由于固体材料层表面的亲水性不佳，使得流体材料层无法平坦地贴附在固体材料层表面，因此在流体材料层中或是流体材料层的表面就会形成气体孔洞，造成流体材料层的表面不平整，影响到后续在流体材料层上所定义的图案的完整性。In the semiconductor manufacturing process, before the photolithography process, a fluid material layer (such as photoresist) needs to be formed over a solid material layer (such as a substrate), and then exposed by a stepper to make the photoresist Define the pattern above. However, due to the poor hydrophilicity of the surface of the solid material layer, the fluid material layer cannot be flatly attached to the surface of the solid material layer, so gas pores will be formed in the fluid material layer or on the surface of the fluid material layer, causing the fluid material layer The surface of the layer is uneven, affecting the integrity of the pattern subsequently defined on the layer of fluid material.

因此本发明提供了一种增加固体材料层和流体材料层之间贴附性的方法以避免气体孔洞的形成，图1绘示的是本发明增加固体材料层和流体材料层之间贴附性的方法的流程图。如图1所示，本发明的增加固体材料层和流体材料层之间贴附性的方法由三个步骤所组成，首先进行步骤1，提供一固体材料层，接着进行步骤2，在第一腔室中，对最上层的固体材料层进行一氧等离子体制作工艺以改善固体材料层的表面亲水性，氧等离子体制作工艺的操作条件包含输入氧气体和氮气体，氧气体流量介于6000至8000每分钟标准毫升(Standard Cubic Centimeters per Minute,sccm)以及氮气体流量介于600至1000每分钟标准毫升，操作压力介于1至2托耳(torr)之间，操作功率介于600至2500瓦特(watt)之间，操作温度介于摄氏100至250度之间。根据本发明的一优选实施例，氧等离子体制作工艺的氧气体流量较佳为7000每分钟标准毫升。根据本发明的另一优选实施例，氮气体流量较佳为800每分钟标准毫升。根据本发明的另一优选实施例，操作压力较佳为1托耳。根据本发明的另一较佳实施例，操作温度较佳为摄氏250度。值得注意的是在氧等离子体制作工艺时第一腔室中没有通入氢气和氮气的混合气体(H2N2)，在第一腔室中也不含有氢气和氮气的混合气体。此外，氧等离子体制作工艺时，氧气体流量需在8000每分钟标准毫升以下，若是高于8000每分钟标准毫升，则会产生预期以外的氧化层，例如厚度大于50纳米的氧化层，此氧化层会影响最后元件的轮廓。Therefore, the present invention provides a method for increasing the adhesion between the solid material layer and the fluid material layer to avoid the formation of gas voids. FIG. 1 shows that the present invention increases the adhesion between the solid material layer and the fluid material layer. The flow chart of the method. As shown in FIG. 1 , the method for increasing the adhesion between the solid material layer and the fluid material layer of the present invention consists of three steps. First, step 1 is performed to provide a solid material layer, and then step 2 is performed. In the chamber, an oxygen plasma fabrication process is performed on the uppermost solid material layer to improve the surface hydrophilicity of the solid material layer. The operating conditions of the oxygen plasma fabrication process include inputting oxygen gas and nitrogen gas, and the oxygen gas flow rate is between 6000 to 8000 standard milliliters per minute (Standard Cubic Centimeters per Minute, sccm) and nitrogen gas flow between 600 to 1000 standard milliliters per minute, operating pressure between 1 to 2 torr (torr), operating power between 600 To 2500 watts (watt), the operating temperature is between 100 and 250 degrees Celsius. According to a preferred embodiment of the present invention, the oxygen gas flow rate of the oxygen plasma fabrication process is preferably 7000 standard milliliters per minute. According to another preferred embodiment of the present invention, the nitrogen gas flow rate is preferably 800 standard milliliters per minute. According to another preferred embodiment of the present invention, the operating pressure is preferably 1 Torr. According to another preferred embodiment of the present invention, the operating temperature is preferably 250 degrees Celsius. It should be noted that during the oxygen plasma fabrication process, a mixed gas of hydrogen and nitrogen (H 2 N 2 ) is not introduced into the first chamber, nor does the first chamber contain a mixed gas of hydrogen and nitrogen. In addition, during the oxygen plasma production process, the oxygen gas flow rate needs to be below 8000 standard milliliters per minute. If it is higher than 8000 standard milliliters per minute, an unexpected oxide layer will be formed, such as an oxide layer with a thickness greater than 50 nanometers. Layers affect the outline of the final component.

在步骤2完成之后，在第二腔室中，进行步骤3以形成一流体材料层直接接触固体材料层的表面。根据本发明的一优选实施例，步骤2中的第一腔室和步骤3中的第二腔室可以是同一个腔室。根据本发明的另一优选实施例，步骤2中的第一腔室和步骤3中的第二腔室可以是不同腔室，例如是同一个机台中的不同腔室。至此，本发明的增加固体材料层和流体材料层之间贴附性的方法已经完成，之后在第三腔室中，烘烤流体材料层将流体材料层固化后转变成掩模材料，之后在第四腔室中进行光刻制作工艺以在掩模材料上定义图案，然后将固体材料层和掩模材料送入其它腔室进行显影制作工艺，最后再以图案化的掩模材料为掩模，蚀刻固体材料层。根据本发明的一优选实施例，第一腔室、第二腔室、第三腔室和第四腔室可以是同一个腔室，根据本发明的另一优选实施例，第一腔室、第二腔室、第三腔室和第四腔室为不同腔室。After step 2 is completed, in the second chamber, step 3 is performed to form a layer of fluid material in direct contact with the surface of the layer of solid material. According to a preferred embodiment of the present invention, the first chamber in step 2 and the second chamber in step 3 may be the same chamber. According to another preferred embodiment of the present invention, the first chamber in step 2 and the second chamber in step 3 may be different chambers, for example, different chambers in the same machine. So far, the method for increasing the adhesion between the solid material layer and the fluid material layer of the present invention has been completed, and then in the third chamber, the fluid material layer is baked to cure the fluid material layer and convert it into a mask material, and then in the third chamber A photolithography process is performed in the fourth chamber to define a pattern on the mask material, then the solid material layer and the mask material are sent to other chambers for the development process, and finally the patterned mask material is used as a mask , etching the solid material layer. According to a preferred embodiment of the present invention, the first chamber, the second chamber, the third chamber and the fourth chamber may be the same chamber. According to another preferred embodiment of the present invention, the first chamber, The second chamber, the third chamber and the fourth chamber are different chambers.

本发明特意在形成流体材料层之前，先对最上层的固体材料层进行氧等离子体制作工艺，在氧等离子体制作工艺之后最上层的固体材料层的亲水性变高以及表面平坦度(smoothness)也变高，而且和未进行氧等离子体制作工艺的情况相较，流体材料层对固体材料层的接触角也变小，因此使得流体材料层可以更佳地贴附在固体材料层上并且在流体材料层中不会存在有气体孔洞。In the present invention, prior to forming the fluid material layer, the uppermost solid material layer is firstly subjected to an oxygen plasma fabrication process. After the oxygen plasma fabrication process, the hydrophilicity and smoothness of the uppermost solid material layer become higher. ) also becomes higher, and the contact angle of the fluid material layer to the solid material layer also becomes smaller compared to the case where the oxygen plasma fabrication process is not performed, so that the fluid material layer can better adhere to the solid material layer and There will be no gas voids in the fluid material layer.

举例而言，固体材料层可以为氧化硅、氮化硅、多晶硅、介电层或先进曝光图样薄膜(advanced patterning film,APF)，固体材料层可以为单层或多层，如由下至上依序堆叠的多晶硅、氧化硅和氮化硅，或者是单层的多晶硅。For example, the solid material layer can be silicon oxide, silicon nitride, polysilicon, a dielectric layer or an advanced patterning film (APF). Sequentially stacked polysilicon, silicon oxide and silicon nitride, or a single layer of polysilicon.

流体材料层可以为底部抗反射层(bottom anti-reflective coating,BARC)、有机介电层(organic dielectric layer,ODL)、含硅硬掩模(silicon-containing hardmask bottom anti-reflection coating,SHB)或光致抗蚀剂。流体材料层也可以是单层或多层，例如由下至上依序堆叠的有机介电层、含硅硬掩模和光致抗蚀剂，或者是单层的光致抗蚀剂。The fluid material layer may be bottom anti-reflective coating (BARC), organic dielectric layer (ODL), silicon-containing hardmask bottom anti-reflection coating (SHB) or photoresist. The layer of fluid material can also be a single layer or multiple layers, such as an organic dielectric layer, a silicon-containing hard mask and a photoresist, or a single layer of photoresist, stacked sequentially from bottom to top.

以下将列举数个本发明的优选实施例以说明本发明的实践方法。Several preferred embodiments of the present invention will be listed below to illustrate the practice of the present invention.

图2至图6为根据本发明的第一优选实施例所绘示的增加固体材料层和流体材料层之间贴附性以及蚀刻基底的方法。根据本发明的第一优选实施例，如图2所示，首先在腟室100中，提供一半导体基底10，例如一硅基底，接着形成固体材料层12覆盖并接触基底10，固体材料层12由下至上依序为一垫氧化硅14和一垫氮化硅16。然后在腟室100中，对最上层的固体材料层12进行一氧等离子体制作工艺18，也就是对垫氮化硅16进行氧等离子体制作工艺18，前述氧等离子体制作工艺18的操作条件包含输入氧气体和氮气体，氧气体流量介于6000至8000每分钟标准毫升，氮气体流量介于600至1000每分钟标准毫升，操作压力介于1至2托耳之间，操作功率介于600至2500瓦特之间，操作温度介于摄氏100至250度之间。氧等离子体制作工艺18的氧气体流量较佳为7000每分钟标准毫升，氮气体流量较佳为800每分钟标准毫升，操作压力较佳为1托耳，操作温度较佳为摄氏250度。在氧等离子体制作工艺18之后，垫氮化硅16的表面粗糙度降底，也就是表面变平整，此外亲水性增加，使得后续将形成在垫氮化硅16上的流体材料层的接触角度变小。2 to 6 illustrate a method for increasing the adhesion between a solid material layer and a fluid material layer and for etching a substrate according to the first preferred embodiment of the present invention. According to the first preferred embodiment of the present invention, as shown in FIG. 2 , first, a semiconductor substrate 10 , such as a silicon substrate, is provided in the chamber 100 , and then a solid material layer 12 is formed to cover and contact the substrate 10 , and the solid material layer 12 From bottom to top are a pad of silicon oxide 14 and a pad of silicon nitride 16 . Then, in the chamber 100 , an oxygen plasma fabrication process 18 is performed on the uppermost solid material layer 12 , that is, an oxygen plasma fabrication process 18 is performed on the pad silicon nitride 16 . The operating conditions of the aforementioned oxygen plasma fabrication process 18 Including input oxygen gas and nitrogen gas, the oxygen gas flow is between 6000 and 8000 standard ml per minute, the nitrogen gas flow is between 600 and 1000 standard ml per minute, the operating pressure is between 1 and 2 Torr, and the operating power is between Between 600 and 2500 watts, operating temperature between 100 and 250 degrees Celsius. The oxygen gas flow rate of the oxygen plasma production process 18 is preferably 7000 standard milliliters per minute, the nitrogen gas flow rate is preferably 800 standard milliliters per minute, the operating pressure is preferably 1 Torr, and the operating temperature is preferably 250 degrees Celsius. After the oxygen plasma fabrication process 18 , the surface roughness of the pad silicon nitride 16 decreases, that is, the surface becomes flat, and in addition, the hydrophilicity increases, so that the subsequent contact of the fluid material layer formed on the pad silicon nitride 16 Angle becomes smaller.

如图3所示，在氧等离子体制作工艺18之后，在腔室200中利用旋转涂布制作工艺形成流体材料层20，在本实施例中，流体材料层20由下至上依序为有机介电层22、含硅硬掩模24和光致抗蚀剂26，至此本发明的增加固体材料层12和流体材料层20之间贴附性的方法业已完成。之后利用烘烤制作工艺将流体材料层20硬化变成为掩模材料21(图未示)。如图4所示，在腔室300中将掩模材料21中的光致抗蚀剂26利用曝光制作工艺图案化，详细来说是将光罩28的图案转印到光致抗蚀剂26上(转印图案的位置以虚线表示)。在本实施例中，腔室300可以是一步进机(scanner)的腔室。根据本发明的一优选实施例，腔室100、腔室200和腔室300为同一腔室。根据本发明的另一优选实施例，腔室100、腔室200和腔室300为不同腔室，例如同一机台中的不同腔室。As shown in FIG. 3 , after the oxygen plasma fabrication process 18 , the fluid material layer 20 is formed in the chamber 200 by a spin coating fabrication process. Electrical layer 22, silicon-containing hardmask 24, and photoresist 26, the method of increasing the adhesion between solid material layer 12 and fluid material layer 20 of the present invention is now complete. Afterwards, the fluid material layer 20 is hardened into a mask material 21 (not shown) by using a baking process. As shown in FIG. 4 , in the chamber 300 , the photoresist 26 in the mask material 21 is patterned by an exposure manufacturing process, in detail, the pattern of the photomask 28 is transferred to the photoresist 26 (the position of the transfer pattern is indicated by the dotted line). In this embodiment, the chamber 300 may be a chamber of a scanner. According to a preferred embodiment of the present invention, the chamber 100, the chamber 200 and the chamber 300 are the same chamber. According to another preferred embodiment of the present invention, the chamber 100 , the chamber 200 and the chamber 300 are different chambers, for example, different chambers in the same machine.

如图5所示，将基底10、固体材料层12和掩模材料21移出腔室300，然后进行光致抗蚀剂26的显影制作工艺，之后以光致抗蚀剂26为掩模，蚀刻含硅硬掩模24和有机介电层22(图未示)，然后以有机介电层22和含硅硬掩模24为掩模，蚀刻垫氮化硅16和垫氧化硅14。如图6所示，以垫氮化硅16和垫氧化硅14为掩模，蚀刻基底10。由于本发明在形成流体材料层20前进行了氧等离子体制作工艺18，因此后续形成的流体材料层20中不会有气体孔洞，而且流体材料层会是平坦的，所以之后转印到基底10上的图案，不会因为流体材料层20上有缺陷而造成最后基底10上的图案有缺损。As shown in FIG. 5 , the substrate 10 , the solid material layer 12 and the mask material 21 are removed from the chamber 300 , and then the photoresist 26 is developed and fabricated, and then the photoresist 26 is used as a mask to etch The silicon-containing hard mask 24 and the organic dielectric layer 22 (not shown) are then etched using the organic dielectric layer 22 and the silicon-containing hard mask 24 as masks to etch the pad silicon nitride 16 and the pad silicon oxide 14 . As shown in FIG. 6, the substrate 10 is etched using the pad silicon nitride 16 and the pad silicon oxide 14 as masks. Since the present invention performs the oxygen plasma fabrication process 18 before forming the fluid material layer 20 , there will be no gas holes in the fluid material layer 20 formed subsequently, and the fluid material layer will be flat, so it is then transferred to the substrate 10 The pattern on the substrate 10 will not be deficient in the final pattern on the substrate 10 due to defects in the fluid material layer 20 .

图7至图8为根据本发明的第二优选实施例所绘示的增加固体材料层和流体材料层之间贴附性的方法。根据本发明的第二优选实施例，如图7所示，在腔室400中提供一固体材料层112，如一多晶硅，接着对固体材料层112进行一氧等离子体制作工艺118，氧等离子体制作工艺118的操作条件和范围如前文所述，在此不在赘述。如图8所示，在腔室500中形成一流体材料层120，例如光致抗蚀剂，直接接触固体材料层112。后续烘烤流体材料层120、图案化掩模材料以及蚀刻固体材料层112的步骤和第一优选实施例中的步骤相同，在此不再赘述。根据本发明的一优选实施例，腔室400和腔室500为同一腔室。根据本发明的另一优选实施例，腔室400和腔室500为不同腔室。7 to 8 illustrate a method for increasing the adhesion between a solid material layer and a fluid material layer according to a second preferred embodiment of the present invention. According to the second preferred embodiment of the present invention, as shown in FIG. 7 , a solid material layer 112 , such as a polysilicon, is provided in the chamber 400 , and then an oxygen plasma fabrication process 118 is performed on the solid material layer 112 . The operating conditions and scope of the process 118 are as described above and will not be repeated here. As shown in FIG. 8 , a fluid material layer 120 , such as photoresist, is formed in the chamber 500 in direct contact with the solid material layer 112 . The subsequent steps of baking the fluid material layer 120 , patterning the mask material, and etching the solid material layer 112 are the same as those in the first preferred embodiment, and will not be repeated here. According to a preferred embodiment of the present invention, the chamber 400 and the chamber 500 are the same chamber. According to another preferred embodiment of the present invention, the chamber 400 and the chamber 500 are different chambers.

图9至图10为根据本发明的第三优选实施例所绘示的增加固体材料层和流体材料层之间贴附性的方法。根据本发明的第三优选实施例，如图9所示，在腔室600中提供一固体材料层212，如一氧化硅层，接着对固体材料层212进行一氧等离子体制作工艺218，氧等离子体制作工艺212的操作条件和范围如前文所述，在此不在赘述。如图10所示，在腔室700中形成一流体材料层220，例如底部抗反射层，直接触固体材料层212。后续烘烤流体材料层220图案化掩模材料以及蚀刻固体材料层212的步骤，和第一优选实施例中的步骤相同，在此不再赘述。根据本发明的一优选实施例，腔室600和腔室700为同一腔室。根据本发明的另一优选实施例，腔室600和腔室700为不同腔室。9 to 10 illustrate a method for increasing the adhesion between a solid material layer and a fluid material layer according to a third preferred embodiment of the present invention. According to the third preferred embodiment of the present invention, as shown in FIG. 9 , a solid material layer 212 , such as a silicon oxide layer, is provided in the chamber 600 , and then an oxygen plasma fabrication process 218 is performed on the solid material layer 212 . The operating conditions and ranges of the body fabrication process 212 are as described above and will not be repeated here. As shown in FIG. 10 , a fluid material layer 220 , such as a bottom anti-reflection layer, is formed in the chamber 700 in direct contact with the solid material layer 212 . The subsequent steps of baking the fluid material layer 220 to pattern the mask material and etching the solid material layer 212 are the same as the steps in the first preferred embodiment, and will not be repeated here. According to a preferred embodiment of the present invention, the chamber 600 and the chamber 700 are the same chamber. According to another preferred embodiment of the present invention, the chamber 600 and the chamber 700 are different chambers.

以上所述仅为本发明的优选实施例，凡依本发明权利要求所做的均等变化与修饰，都应属本发明的涵盖范围。The above descriptions are only preferred embodiments of the present invention, and all equivalent changes and modifications made according to the claims of the present invention shall fall within the scope of the present invention.

Claims (10)

1. A method of increasing adherence between a layer of solid material and a layer of fluid material, comprising:
providing a layer of solid material;
performing an oxygen plasma process on the solid material layer, wherein the operating conditions of the oxygen plasma process include inputting oxygen gas and nitrogen gas, the oxygen gas flow rate is between 6000 and 8000 standard milliliters per minute, and the nitrogen gas flow rate is between 600 and 1000 standard milliliters per minute; and
after the oxygen plasma fabrication process, a fluid material layer is formed to directly contact a surface of the solid material layer.
2. The method of claim 1, wherein the solid material layer comprises silicon oxide, silicon nitride, polysilicon, a dielectric layer or an advanced exposure pattern film.
3. The method for increasing adhesion between a layer of solid material and a layer of fluid material according to claim 1, wherein the layer of fluid material comprises a bottom antireflective layer, an organic dielectric layer, a silicon-containing hardmask bottom antireflective layer, or a photoresist.
4. The method of claim 1, wherein the hydrophilicity of the surface of the solid material layer increases after the oxygen plasma forming process.
5. The method of claim 1, wherein the oxygen plasma process is performed at a temperature of 100 to 250 degrees celsius and at a pressure of 1 to 2 torr.
6. The method of claim 1, wherein the oxygen plasma forming process and the step of forming the fluid material layer are performed in the same chamber.
7. A method of increasing adherence between a layer of solid material and a layer of fluid material consisting of only the steps of:
step (a): providing a layer of solid material;
step (b): performing an oxygen plasma process on the solid material layer, wherein the operating conditions of the oxygen plasma process include inputting oxygen gas and nitrogen gas, the oxygen gas flow rate is between 6000 to 8000 standard milliliters per minute and the nitrogen gas flow rate is between 600 to 1000 standard milliliters per minute; and
step (c): after step (b), forming a layer of fluid material in direct contact with a surface of the layer of solid material.
8. The method of increasing adhesion between a layer of solid material and a layer of fluid material as claimed in claim 7, wherein the layer of solid material comprises silicon oxide, silicon nitride, polysilicon, a dielectric layer or an advanced exposure patterning film.
9. The method for increasing adhesion between a layer of solid material and a layer of fluid material as recited in claim 7, wherein the layer of fluid material comprises a bottom antireflective layer, an organic dielectric layer, a silicon-containing hardmask bottom antireflective layer, or a photoresist.
10. The method for increasing adherence between a layer of solid material and a layer of fluid material according to claim 7, wherein steps (b) and (c) are performed in the same chamber.
CN201910359869.8A 2019-04-30 2019-04-30 Method for increasing adhesion between a layer of solid material and a layer of fluid material Pending CN111863600A (en)

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CN106292186A (en) * 2016-10-10 2017-01-04 上海华力微电子有限公司 A kind of photoetching method

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Publication number Priority date Publication date Assignee Title
US4176003A (en) * 1978-02-22 1979-11-27 Ncr Corporation Method for enhancing the adhesion of photoresist to polysilicon
US20030059550A1 (en) * 2001-09-25 2003-03-27 Jsr Corporation Method of film formation, insulating film, and substrate for semiconductor
CN1564876A (en) * 2001-10-02 2005-01-12 株式会社先端技术培育系统 Thin metal oxide film and process for producing the same
US6677251B1 (en) * 2002-07-29 2004-01-13 Taiwan Semiconductor Manufacturing Co., Ltd Method for forming a hydrophilic surface on low-k dielectric insulating layers for improved adhesion
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