CN111863083A - NOR flash memory programming method and device and NOR flash memory - Google Patents
NOR flash memory programming method and device and NOR flash memory Download PDFInfo
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- CN111863083A CN111863083A CN201910357011.8A CN201910357011A CN111863083A CN 111863083 A CN111863083 A CN 111863083A CN 201910357011 A CN201910357011 A CN 201910357011A CN 111863083 A CN111863083 A CN 111863083A
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- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/06—Auxiliary circuits, e.g. for writing into memory
- G11C16/10—Programming or data input circuits
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- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/06—Auxiliary circuits, e.g. for writing into memory
- G11C16/10—Programming or data input circuits
- G11C16/14—Circuits for erasing electrically, e.g. erase voltage switching circuits
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- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/06—Auxiliary circuits, e.g. for writing into memory
- G11C16/34—Determination of programming status, e.g. threshold voltage, overprogramming or underprogramming, retention
- G11C16/3404—Convergence or correction of memory cell threshold voltages; Repair or recovery of overerased or overprogrammed cells
Abstract
The invention provides a method and a device for programming a NOR flash memory and the NOR flash memory, wherein the NOR flash memory comprises: a memory cell, the method comprising: and receiving a programming operation instruction, judging whether the threshold voltage of the memory unit to be programmed is smaller than a preset value, and if the threshold voltage is larger than the preset value, executing low-voltage programming operation on the memory unit to be programmed with the threshold voltage larger than the preset value. When the programming operation is executed, the low-voltage programming operation is executed on the memory unit which is larger than the preset value, so that the memory unit cannot be programmed to a very high threshold voltage after the programming operation is executed, the threshold voltage of the memory unit after the low-voltage programming operation is relatively more concentrated, and because the threshold voltage of the memory unit after the low-voltage programming operation is lower than the threshold voltage of the memory unit after the normal programming operation, the erasing operation of the memory unit is faster than that of the memory unit after the normal programming operation, and the programming performance and the erasing performance of the NOR flash memory are improved on the whole.
Description
Technical Field
The invention relates to the field of storage, in particular to a method and a device for programming a NOR flash memory and an NORflash memory.
Background
When the current NOR flash memory executes the programming operation, the same programming voltage is uniformly applied to different memory cells needing to be programmed to execute the programming operation, the memory cells with the relatively higher threshold voltage in the erasing threshold range are easily programmed to a very high threshold voltage, the threshold voltage distribution can be overlapped, the error of the programmed data can be caused, and the part of the programmed memory cells can be erased slowly when the erasing operation is executed.
Referring to fig. 1, a schematic diagram of a threshold voltage distribution principle when programming a 4-bit (bit) memory cell of a NOR flash memory is shown, wherein Vread1, Vread2, Vread3 are read operation voltages in different states, and if a memory cell needs to be programmed from "00" state to "01" during a programming operation, since the programming voltages are the same, the memory cell 1 at the right end of the threshold voltage distribution of "00" may be programmed to the junction between "01" and "10" or even directly programmed to the memory cell of "10" after the programming operation is performed, thereby causing data errors of the memory cells of "01" and "10".
Disclosure of Invention
The programming method and device of the NOR flash memory and the NOR flash memory solve the problem that the threshold voltage is too dispersed after programming because the memory cells with higher threshold voltage are programmed to the very high threshold voltage by adopting the same programming voltage to execute the programming operation.
In order to solve the above technical problem, an embodiment of the present invention provides a method for programming a NOR flash memory, where the NOR flash memory includes: a memory cell, the method comprising:
receiving a programming operation instruction;
judging whether the threshold voltage of the memory cell to be programmed is smaller than a preset value;
and if the threshold voltage is greater than the preset value, executing a low-voltage programming operation on the memory cell to be programmed with the threshold voltage greater than the preset value, wherein the voltage of the low-voltage programming operation is less than that of a normal programming operation.
Optionally, the voltage of the low-voltage programming operation takes values as follows:
subtracting a target voltage value from the voltage value of the normal programming operation, wherein the target voltage value is determined by avoiding that the threshold voltage of the memory cell to be programmed is higher than the preset value after the normal programming operation is performed.
Optionally, after determining whether the threshold voltage of the memory cell to be programmed is smaller than a preset value, the method further includes:
and if the threshold voltage is smaller than the preset value, executing the normal programming operation on the memory cell to be programmed with the threshold voltage smaller than the preset value.
Optionally, the method further comprises:
receiving an erasing operation instruction;
determining whether the memory cell targeted by the erase operation instruction has performed the low voltage programming operation;
performing a first erasing operation on the memory cells which have performed the low-voltage programming operation, wherein the time required by the first erasing operation is a first time;
and executing a second erasing operation on the memory cells which are not subjected to the low-voltage programming operation, wherein the time required by the second erasing operation is a second time, and the first time is less than the second time.
An embodiment of the present invention further provides a NOR flash memory programming apparatus, where the NOR flash memory includes: a storage unit, the apparatus comprising:
the first receiving module is used for receiving a programming operation instruction;
the judging module is used for judging whether the threshold voltage of the storage unit to be programmed is smaller than a preset value;
and the low-voltage programming module is used for executing a low-voltage programming operation on the memory cell to be programmed, the threshold voltage of which is greater than the preset value, if the threshold voltage is greater than the preset value, wherein the voltage of the low-voltage programming operation is less than that of a normal programming operation.
Optionally, the apparatus further comprises:
and the value taking module is used for subtracting the target voltage value from the voltage value of the normal programming operation to obtain the voltage of the low-voltage programming operation.
Optionally, the apparatus further comprises:
and the normal programming module is used for executing the normal programming operation on the memory cell to be programmed, of which the threshold voltage is smaller than the preset value, if the threshold voltage is smaller than the preset value.
Optionally, the apparatus further comprises:
the second receiving module is used for receiving an erasing operation instruction;
the determining module is used for determining whether the memory cell targeted by the erasing operation instruction performs the low-voltage programming operation;
the erasing module is used for executing a first erasing operation on the memory unit which is executed with the low-voltage programming operation, and the time required by the first erasing operation is first time;
the memory cell array is also used for executing a second erasing operation on the memory cells which are not executed with the low-voltage programming operation, the time required by the second erasing operation is a second time, and the first time is less than the second time.
An embodiment of the present invention further provides a NOR flash memory, including: the NOR flash memory is used for executing the method for programming the NOR flash memory.
Compared with the prior art, the NOR flash memory programming method and device and the NORflash memory provided by the invention, when the programming operation is executed, whether the threshold voltage of the memory cell to be programmed is smaller than a preset value is judged, performing a low voltage programming operation on the memory cells larger than a predetermined value, so that the memory cells are not programmed to a high threshold voltage after the programming operation, and finally the threshold voltage of the memory cells after the low voltage programming operation is more concentrated than the threshold voltage of the memory cells after the normal programming operation, and because the threshold voltage of the memory cell after the low voltage program operation is lower than the threshold voltage of the memory cell after the normal program operation, the memory cell after the low-voltage programming operation is erased faster than the memory cell after the normal programming operation, and the programming performance and the erasing performance of the NOR flash memory are improved on the whole.
Drawings
In order to more clearly illustrate the technical solutions of the embodiments of the present invention, the drawings needed to be used in the description of the embodiments of the present invention will be briefly introduced below, and it is obvious that the drawings in the following description are only some embodiments of the present invention, and it is obvious for those skilled in the art that other drawings can be obtained according to these drawings without inventive labor.
FIG. 1 is a schematic diagram of the distribution principle of threshold voltage when programming is performed on memory cells of a conventional NOR flash memory;
FIG. 2 is a flow chart of a method for programming a NOR flash memory according to an embodiment of the present invention;
FIG. 3 is a flowchart of a NOR flash memory programming method after step 102 according to an embodiment of the present invention;
FIG. 4 is a diagram illustrating threshold distributions of memory cells performing a low voltage program operation according to an embodiment of the present invention.
Detailed Description
The technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the drawings in the embodiments of the present invention, and it is obvious that the described embodiments are some, not all, embodiments of the present invention. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.
Fig. 2 is a flowchart illustrating a NOR flash memory programming method according to an embodiment of the present invention. The NOR flash memory includes: the programming method of the memory unit and the NOR flash memory comprises the following steps:
step 101: a programming operation instruction is received.
In an embodiment of the present invention, a NOR flash memory includes: the memory cell, the memory cell stores the memory cell of the write-in data in NOR flash memory, when NOR flash memory carries out the programming operation, the memory cell threshold voltage is the programming unit only if the memory cell greater than the programming verification voltage; only memory cells with a threshold voltage less than the erase verify voltage are erase cells.
The NOR flash memory receives a programming operation instruction sent by an upper computer, the programming operation instruction may include an address of a memory cell to be programmed, namely, a memory cell needing to write data to be programmed into a specified address, and the programming operation refers to the whole process from the time of receiving the programming operation instruction to the time of correctly writing the data to be programmed into the memory cell. The above description is not limited in detail by the embodiments of the present invention, and the embodiments may be set according to actual situations.
Step 102: and judging whether the threshold voltage of the memory cell to be programmed is smaller than a preset value.
In the embodiment of the invention, after the NOR flash memory receives the programming operation instruction, whether the threshold voltage of the memory cell to be programmed is smaller than the preset value is judged, the preset value is obtained by combining a large number of simulation tests, actual tests, empirical formula calculation and other modes, and after the memory cell with the threshold voltage larger than the preset value is subjected to normal programming operation, the threshold voltage after the normal programming operation is very high, and even the programming data is wrong. The embodiment of the present invention is not limited in detail, and may be set according to actual situations.
In the embodiment of the invention, if the threshold voltage of the memory cell to be programmed is greater than the preset value, the NOR flash memory executes low-voltage programming operation on the memory cell, the voltage of the low-voltage programming operation is smaller than the voltage of the normal programming operation, the value of the voltage of the low-voltage programming operation is the value obtained by subtracting the target voltage value from the voltage value of the normal programming operation, the target voltage value is the reduced value of the voltage of the normal programming operation, which can prevent the memory cell to be programmed, of which the threshold voltage is greater than the preset value, from being excessively high after the normal programming operation is executed, and the target voltage value is obtained through a large number of actual tests. Assuming that the preset value is 2.8V, the threshold voltage of a memory cell is 3.0V, and the threshold voltage should be 4.0V after the programming operation is successful, but after the normal programming operation is performed, the threshold voltage of the memory cell becomes 5.0V after the normal programming voltage is 2.0V, which is greater than the threshold voltage that should be reached after the programming operation is successful, and the low-voltage programming operation is performed, and the threshold voltage of the memory cell becomes 4.0V after the low-voltage programming voltage is 1.0V, which is programmed successfully, so that the target voltage value is 1.0V. The embodiment of the present invention is not limited in detail, and may be set according to actual situations.
Optionally, after step 102, the method for programming the NOR flash memory further includes:
In the embodiment of the invention, for one-time programming operation, only one or more corresponding to-be-programmed memory cells may be provided, for the case of only one memory cell, the threshold voltage is either smaller than a preset value or larger than the preset value, when the threshold voltage is larger than the preset value, a low-voltage programming operation is performed, and when the threshold voltage is smaller than the preset value, a normal programming operation is performed; when a plurality of memory cells exist, the threshold voltages of the plurality of memory cells are less than a preset value, and are greater than the preset value, a low-voltage programming operation is performed on the memory cells with the threshold voltages greater than the preset value, and a normal programming operation is performed on the memory cells with the threshold voltages less than the preset value. Therefore, when the programming operation is finally completed, the threshold voltage of the programmed memory cell cannot become very high, and the threshold voltage distribution of the programmed memory cell is concentrated, so that the threshold voltage distribution of the memory cell corresponding to the next programming operation and the threshold voltage distribution of the memory cell corresponding to the current programming operation cannot be overlapped. The embodiment of the present invention is not limited in detail, and may be set according to actual situations.
Optionally, referring to fig. 3, after step 103a or 103b, the method further comprises:
step 104: an erase operation instruction is received.
In the embodiment of the invention, after the NOR flash memory executes the over-programming operation and needs to execute the erasing operation, the NOR flash memory firstly receives the erasing operation instruction which comprises the address of the memory unit to be erased. The embodiment of the present invention is not limited in detail, and may be set according to actual situations.
Step 105 a: and performing a first erasing operation on the memory cells which perform the low-voltage programming operation, wherein the time required by the first erasing operation is a first time.
In the embodiment of the invention, if the memory unit to be erased executes the undervoltage programming operation, the NOR flash memory executes the erasing operation (i.e. the first erasing operation) on the memory unit executing the undervoltage programming operation, and a certain time (i.e. the first time) is required for finishing the erasing operation. The embodiment of the present invention is not limited in detail, and may be set according to actual situations.
Step 105 b: and performing a second erasing operation on the memory cells which are not subjected to the low-voltage programming operation, wherein the time required by the second erasing operation is a second time, and the first time is less than the second time.
In the embodiment of the invention, if the memory cell to be erased does not execute the low-voltage programming operation, the NOR flash memory executes the erasing operation (i.e. the second erasing operation) on the memory cell which does not execute the low-voltage programming operation, and a certain time (i.e. the second time) is required for finishing the erasing operation. For the same memory cell, the threshold voltage after the programming operation is lower than the threshold voltage after the normal programming operation is performed, and according to the erasing operation and the characteristics of the NOR flash memory, the time (namely, the first time) required for performing the erasing operation on the memory cell performing the low-voltage programming operation is shorter than the time (namely, the second time) required for performing the erasing operation on the memory cell performing the normal programming operation, namely, the first time is shorter than the second time. For example, a memory cell of 3.0V with a predetermined value of 2.8V has a threshold voltage of 5.0V after a normal program operation and a threshold voltage of 4.0V after a low voltage program operation, and thus, it takes a shorter time to perform an erase operation from a voltage of 4.0V than to perform an erase operation from a voltage of 5.0V when an erase operation is performed. The embodiment of the present invention is not limited in detail, and may be set according to actual situations.
Referring to fig. 4, a diagram of threshold distribution of memory cells performing a low voltage programming operation according to an embodiment of the present invention is shown, where Vh is a preset value, Vread is a read operation, Vpv is a program verify voltage, a horizontal axis is a threshold voltage, a vertical axis is a memory cell distribution, vpgm is a voltage of a normal programming operation, Δ v is a target voltage value, and vpgm- Δ v are voltages of a low voltage programming operation. The solid line 1 is a threshold voltage distribution curve of a memory cell to be programmed, the solid line 2 is a threshold voltage distribution curve after performing the low-voltage programming operation and the normal programming operation, and the dotted line 3 is a threshold voltage distribution curve after performing the normal programming operation corresponding to the solid line 1.
The NOR flash memory receives a programming operation instruction sent by an upper computer, the programming operation instruction comprises an address of a memory cell to be programmed, a threshold voltage distribution curve of the memory cell to be programmed is shown as a solid line 1 in FIG. 4, after a normal programming operation is performed on the memory cell (the voltage of the normal programming operation is vpgm), the threshold voltage of the memory cell after the normal programming operation becomes very high, the curve is shown as a dotted line 3 in FIG. 4, the threshold voltage of a part of the memory cells in the memory cell to be programmed is greater than a preset value Vh, as shown by the right side of a point 4 in FIG. 4, the threshold voltage is greater than the preset value, the NOR flash memory performs a low-voltage programming operation on the memory cell with the threshold voltage greater than the preset value, the voltage is vpgm- Δ v, the NOR flash memory performs a normal programming operation on the memory cell with the threshold voltage less than the preset value, the voltage is vpgm, and after the low-voltage programming operation and, the curves corresponding to the memory cell to be programmed after the low voltage program operation and the normal program operation are obtained, as shown by the solid line 2 in fig. 4. The voltage of the rightmost point 5 in the solid line 2 is smaller than the voltage of the rightmost point 6 in the dotted line 3, the rightmost point 5 in the solid line 2 is the maximum value of the threshold voltage of the memory cell after the low-voltage programming operation, and the rightmost point 6 in the dotted line 3 is the maximum value of the threshold voltage of the memory cell after only the normal programming operation, so that it can be known that the threshold voltage distribution of the memory cell after the low-voltage programming operation is more concentrated and no error occurs, thereby improving the programming performance of the NOR flash memory.
After the programming operation is completed, if the erasing operation needs to be executed, an erasing operation instruction is firstly received, the erasing operation instruction comprises the address of the memory unit to be erased, according to the address, the time for executing the erasing operation on the memory unit which executes the low-voltage programming operation is shorter than the time for executing the erasing operation on the memory unit which executes the normal programming operation for the same memory unit, for example, the erasing operation is executed on the point 5 and the point 6 in fig. 4, because the voltage of the point 5 is less than that of the point 6, the time for executing the erasing operation on the point 5 is shorter than that of executing the erasing operation on the point 6, and therefore, the erasing performance of the NOR flash memory is improved.
An embodiment of the present invention further provides a device for programming a NOR flash memory, where the NOR flash memory includes: the NOR flash memory programming device comprises:
the first receiving module is used for receiving a programming operation instruction;
the judging module is used for judging whether the threshold voltage of the storage unit to be programmed is smaller than a preset value;
and the low-voltage programming module is used for executing a low-voltage programming operation on the memory cell to be programmed, the threshold voltage of which is greater than the preset value, if the threshold voltage is greater than the preset value, and the voltage of the low-voltage programming operation is less than that of the normal programming operation.
Optionally, the NOR flash memory programming device further includes:
and the value taking module is used for subtracting the target voltage value from the voltage value of the normal programming operation to obtain the voltage of the low-voltage programming operation.
Optionally, the NOR flash memory programming device further includes:
and the normal programming module is used for executing normal programming operation on the memory cell to be programmed, the threshold voltage of which is less than the preset value, if the threshold voltage of which is less than the preset value.
Optionally, the NOR flash memory programming device further includes:
the second receiving module is used for receiving an erasing operation instruction;
the erasing module is used for executing a first erasing operation on the memory unit which executes the low-voltage programming operation, and the time required by the first erasing operation is first time;
and the memory cell array is also used for executing a second erasing operation on the memory cells which do not execute the low-voltage programming operation, wherein the time required by the second erasing operation is a second time, and the first time is less than the second time.
Optionally, in an embodiment of the present invention, a NOR flash memory includes: the storage unit is a NOR flash memory and is used for executing the method.
Through the embodiment, during the programming operation, the NOR flash memory receives the programming instruction, judges whether the threshold voltage of the memory unit to be programmed is smaller than the preset value, executes the normal programming operation on the memory unit smaller than the preset value, and executes the low-voltage programming operation on the memory unit larger than the preset value, so that the memory unit cannot be programmed to a very high threshold voltage after executing the programming operation, and because the threshold voltage of the memory unit after the low-voltage programming operation is lower than the threshold voltage of the memory unit after the normal programming operation, the natural erasing operation executed on the memory unit after the low-voltage programming operation is faster than the memory unit after the normal programming operation, thereby integrally improving the programming performance and the erasing performance of the NOR flash memory.
Finally, it should also be noted that, herein, relational terms such as first and second, and the like may be used solely to distinguish one entity or action from another entity or action without necessarily requiring or implying any actual such relationship or order between such entities or actions. Also, herein, the terms "comprises," "comprising," or any other variation thereof, are intended to cover a non-exclusive inclusion, such that a process, method, article, or apparatus that comprises a list of elements does not include only those elements but may include other elements not expressly listed or inherent to such process, method, article, or apparatus. Without further limitation, an element defined by the phrase "comprising an … …" does not exclude the presence of other like elements in a process, method, article, or apparatus that comprises the element.
While the present invention has been described with reference to the embodiments shown in the drawings, the present invention is not limited to the embodiments, which are illustrative and not restrictive, and it will be apparent to those skilled in the art that various changes and modifications can be made therein without departing from the spirit and scope of the invention as defined in the appended claims.
Claims (9)
1. A method of programming a NOR flash memory, the NOR flash memory comprising: a memory cell, the method comprising:
receiving a programming operation instruction;
judging whether the threshold voltage of the memory cell to be programmed is smaller than a preset value;
and if the threshold voltage is greater than the preset value, executing a low-voltage programming operation on the memory cell to be programmed with the threshold voltage greater than the preset value, wherein the voltage of the low-voltage programming operation is less than that of a normal programming operation.
2. The method of claim 1, wherein the voltage of the low voltage programming operation is selected from the group consisting of:
subtracting a target voltage value from the voltage value of the normal programming operation, wherein the target voltage value is determined by avoiding that the threshold voltage of the memory cell to be programmed is higher than the preset value after the normal programming operation is performed.
3. The method of claim 1, wherein after determining whether the threshold voltage of the memory cell to be programmed is less than the predetermined value, the method further comprises:
and if the threshold voltage is smaller than the preset value, executing the normal programming operation on the memory cell to be programmed with the threshold voltage smaller than the preset value.
4. The method of claim 1, further comprising:
receiving an erasing operation instruction;
performing a first erasing operation on the memory cells which have performed the low-voltage programming operation, wherein the time required by the first erasing operation is a first time;
and executing a second erasing operation on the memory cells which are not subjected to the low-voltage programming operation, wherein the time required by the second erasing operation is a second time, and the first time is less than the second time.
5. An apparatus for programming a NOR flash memory, the NOR flash memory comprising: a storage unit, the apparatus comprising:
the first receiving module is used for receiving a programming operation instruction;
the judging module is used for judging whether the threshold voltage of the storage unit to be programmed is smaller than a preset value;
and the low-voltage programming module is used for executing a low-voltage programming operation on the memory cell to be programmed, the threshold voltage of which is greater than the preset value, if the threshold voltage is greater than the preset value, wherein the voltage of the low-voltage programming operation is less than that of a normal programming operation.
6. The apparatus of claim 5, further comprising:
and the value taking module is used for subtracting the target voltage value from the voltage value of the normal programming operation to obtain the voltage of the low-voltage programming operation.
7. The apparatus of claim 5, further comprising:
and the normal programming module is used for executing the normal programming operation on the memory cell to be programmed, of which the threshold voltage is smaller than the preset value, if the threshold voltage is smaller than the preset value.
8. The apparatus of claim 5, further comprising:
the second receiving module is used for receiving an erasing operation instruction;
the erasing module is used for executing a first erasing operation on the memory unit which is executed with the low-voltage programming operation, and the time required by the first erasing operation is first time;
the memory cell array is also used for executing a second erasing operation on the memory cells which are not executed with the low-voltage programming operation, the time required by the second erasing operation is a second time, and the first time is less than the second time.
9. A NOR flash memory, comprising: memory unit for performing the method of any of claims 1-4.
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