CN111849487A - High-selectivity silicon nitride etching solution, and preparation method and application thereof - Google Patents

High-selectivity silicon nitride etching solution, and preparation method and application thereof Download PDF

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CN111849487A
CN111849487A CN202010822571.9A CN202010822571A CN111849487A CN 111849487 A CN111849487 A CN 111849487A CN 202010822571 A CN202010822571 A CN 202010822571A CN 111849487 A CN111849487 A CN 111849487A
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CN111849487B (en
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王溯
孙红旗
季峥
蔡进
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Shanghai Xinyang Semiconductor Material Co Ltd
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    • C09K13/00—Etching, surface-brightening or pickling compositions
    • C09K13/04—Etching, surface-brightening or pickling compositions containing an inorganic acid
    • C09K13/06—Etching, surface-brightening or pickling compositions containing an inorganic acid with organic material
    • H—ELECTRICITY
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    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105—After-treatment
    • H01L21/311—Etching the insulating layers by chemical or physical means
    • H01L21/31105—Etching inorganic layers
    • H01L21/31111—Etching inorganic layers by chemical means
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    • C07F7/02—Silicon compounds
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Abstract

The invention discloses a high-selectivity ratio silicon nitride etching solution, a preparation method and application thereof. The etching solution is prepared from the following raw materials in parts by mass: 75-85% of phosphoric acid, 0.1-12% of compound A and 3-24% of water, wherein the mass fraction is the mass percentage of each component in the total mass of each component. The etching solution has proper etching rate selection ratio to silicon oxide and silicon nitride, can selectively remove nitride films, prolongs the service life of the etching solution and can adapt to the increase of the number of layers of a laminated structure.

Description

High-selectivity silicon nitride etching solution, and preparation method and application thereof
Technical Field
The invention relates to a high-selectivity ratio silicon nitride etching solution, a preparation method and application thereof.
Background
An oxide film such as a silicon oxide film and a nitride film such as a silicon nitride film are representative insulator films, and in a semiconductor manufacturing process, the silicon oxide film or the silicon nitride film may be used alone or in the form of a stacked body (laminate) in which one or more thin films are alternately stacked. In addition, an oxide film or a nitride film is also used for a hard mask for forming a conductive pattern such as a metal wiring.
In the wet etching process for removing the nitride film, an aqueous phosphoric acid solution is generally used. There are many problems with the aqueous phosphoric acid solution alone, such as: the etching rate selection ratio of silicon oxide and silicon nitride is improper, and more particles and precipitates exist in the solution in a short time in the process, so that the service life of liquid medicine is short, the increase of the layer number of the laminated structure cannot be adapted, and the like.
In order to solve these problems, it is considered to add an additive to the phosphoric acid aqueous solution to improve the etching capability of the phosphoric acid aqueous solution.
Disclosure of Invention
The invention provides a silicon nitride etching solution with a high selectivity ratio, a preparation method and application thereof, aiming at overcoming the defects that when phosphoric acid aqueous solution is used for etching in the existing wet etching process for removing a nitride film, the etching rate selectivity of silicon oxide and silicon nitride is not proper, the service life of liquid medicine is short due to more particles and precipitates in the solution in a short time in the process, the layer number increase of a laminated structure cannot be adapted to, and the like. When the etching solution is used for etching, the etching rate selection ratio of silicon oxide and silicon nitride is proper, the nitride film can be selectively removed, the service life of the etching solution is prolonged, and the etching solution can adapt to the increase of the number of laminated structure layers.
The present invention solves the above technical problems by the following technical solutions.
The invention provides an etching solution composition which is prepared from the following raw materials in parts by mass: 75-85% of phosphoric acid, 0.1-12% of compound A and 3-24% of water, wherein the mass fraction is the mass percentage of each component in the total mass of each component;
Figure BDA0002633315770000021
in the etching solution composition, the water may be one or more of deionized water, distilled water, pure water and ultrapure water.
In the above etching solution composition, the etching solution composition may be an etching solution composition for etching a silicon nitride film. The etching may be performed in the presence of a silicon oxide film. The silicon nitride film may be a silicon nitride film formed on a patterned silicon semiconductor wafer. The thickness of the silicon nitride film can be
Figure BDA0002633315770000022
The silicon oxide film may be a silicon oxide film formed on a patterned silicon semiconductor wafer. The thickness of the silicon oxide film may be
Figure BDA0002633315770000023
In one embodiment, when the etching is performed in the presence of a silicon oxide film, the silicon oxide film and the silicon nitride film have a stacked structure of a silicon oxide film and a silicon nitride film. In the laminated structure, the thickness of the silicon oxide film may be set to
Figure BDA0002633315770000024
The thickness of the silicon nitride film can be
Figure BDA0002633315770000025
In the laminated structure, the number of layers of the laminated structure can be 10-200, such as 32, 64, 128 or 192.
In the etching solution composition, the phosphoric acid may be 77%, 78%, 81%, 84% or 85% by mass.
In the etching solution composition, the mass fraction of the compound a may be 0.5% to 10%, for example, 1.0% to 9.5%, and further, for example, 4.5%.
In the above etching solution composition, the raw material of the etching solution composition may be composed of the phosphoric acid, the compound a, and the water.
In the etching solution composition, the raw materials of the etching solution composition can be composed of any one of the following schemes:
scheme A:
the raw materials of the etching solution composition consist of 4.50 percent of compound A, 81 percent of phosphoric acid and 14.5 percent of water;
scheme B:
the raw materials of the etching solution composition consist of 1.0 percent of compound A, 84 percent of phosphoric acid and 15 percent of water;
scheme C:
the raw materials of the etching solution composition consist of 9.50 percent of compound A, 78 percent of phosphoric acid and 12.5 percent of water;
scheme D:
the raw materials of the etching solution composition consist of 0.50 percent of compound A, 85 percent of phosphoric acid and 14.5 percent of water;
scheme E:
the raw materials of the etching solution composition consist of 10.0 percent of compound A, 77 percent of phosphoric acid and 13 percent of water.
The invention also provides a preparation method of the etching solution composition, which comprises the following steps: and mixing the phosphoric acid, the compound A and the water to obtain the etching solution composition.
In the above preparation method, the temperature of the mixing may be room temperature.
In one embodiment, the preparation method comprises the following steps: and adding the compound A into the phosphoric acid and the water to obtain the etching solution composition. The phosphoric acid and water are preferably 85% by mass.
The invention also provides an application of the etching solution composition in etching a silicon nitride film. The silicon nitride film may be defined as described above.
In the above application, the above etching may be performed in the presence of a silicon oxide film, which may be defined as described above.
In the above application, the etching temperature may be 140 ℃ to 161 ℃.
In the above application, the etching time may be 600 seconds to 6000 seconds, for example 720 seconds.
In the present invention, "room temperature" means 10 to 40 ℃ unless otherwise specified.
The invention also provides the application of the compound A in preparing the etching solution;
Figure BDA0002633315770000041
in the application of the compound A in preparing the etching solution, the mass fraction of the compound A in the etching solution can be 0.1-12%, for example 0.5-10%, for example 1.0-9.5%, for example 4.5%
In the application of the compound a in preparing the etching solution, the etching solution may contain phosphoric acid, and the mass fraction of the phosphoric acid in the etching solution may be 75% to 85%, for example, 77%, 78%, 81%, 84% or 85%.
In the application of the compound A in preparing the etching solution, the etching solution can contain water, and the mass fraction of the water in the etching solution can be 3-24%.
In the application of the compound A in preparing the etching solution, the etching solution can be used for etching a silicon nitride film, and the etching can be carried out in the presence of a silicon oxide film. The silicon nitride film and the silicon oxide film may be defined as described above.
In the application of the compound A in preparing the etching solution, the raw material of the etching solution can be composed of any one of the following schemes:
the first scheme is as follows:
the raw materials of the etching solution consist of 4.50 percent of compound A, 81 percent of phosphoric acid and 14.5 percent of water;
scheme II:
the raw materials of the etching solution consist of 1.0 percent of compound A, 84 percent of phosphoric acid and 15 percent of water;
the third scheme is as follows:
the raw materials of the etching solution consist of 9.50 percent of compound A, 78 percent of phosphoric acid and 12.5 percent of water;
and the scheme is as follows:
the raw materials of the etching solution consist of 0.50 percent of compound A, 85 percent of phosphoric acid and 14.5 percent of water;
and a fifth scheme:
the raw materials of the etching solution consist of 10.0 percent of compound A, 77 percent of phosphoric acid and 13 percent of water.
The above preferred conditions can be arbitrarily combined to obtain preferred embodiments of the present invention without departing from the common general knowledge in the art.
The reagents and starting materials used in the present invention are commercially available.
The positive progress effects of the invention are as follows: when the etching solution is used for etching, the etching rate selection ratio of silicon oxide and silicon nitride is proper, the nitride film can be selectively removed, the service life of the etching solution is prolonged, and the etching solution can adapt to the increase of the number of layers of a laminated structure.
Detailed Description
The invention is further illustrated by the following examples, which are not intended to limit the scope of the invention. The experimental methods without specifying specific conditions in the following examples were selected according to the conventional methods and conditions, or according to the commercial instructions.
1. Preparation of etching solution
Structure of compound a:
Figure BDA0002633315770000051
structure of compound B:
Figure BDA0002633315770000052
the production methods of compound a and compound B refer to JP 2020059797A;
wherein-C3H6-and-C2H4-are all linear structures;
respectively adding the compound A or the compound B into pure phosphoric acid raw materials at room temperature to obtain etching solutions in examples 1-5 and comparative example 1; the etching solution in comparative example 2 was pure phosphoric acid as a raw material.
The pure phosphoric acid raw materials used in the invention are all concentrated phosphoric acid with the mass percentage of 85%. In the case of other concentrations of concentrated phosphoric acid, the amount of concentrated phosphoric acid converted to that concentration can be calculated by equivalent amounts.
2. Etching experiment
(1) Method for detecting etching rate
Etching an object: a silicon oxide film and a silicon nitride film; wherein the two films are deposited on the patterned silicon semiconductor wafer to a thickness of
Figure BDA0002633315770000062
And forming a deposit on the patterned silicon semiconductor wafer to a thickness of
Figure BDA0002633315770000063
The silicon nitride film of (1).
Etching temperature: 159 ℃ plus or minus 2 ℃.
Etching container: a quartz tank.
Etching time: the silicon oxide film and the silicon nitride film were etched for 720 seconds and 6000 seconds, respectively.
The speed measurement method comprises the following steps: the film thicknesses of the silicon oxide film and the nitride film were measured before and after etching using a film thickness measuring apparatus (NANO VIEW, SEMG-1000), and the etching rate was calculated by dividing the difference between the initial thickness and the thickness after etching by the etching time (minutes). The selectivity ratio represents the ratio of the nitride film etching rate (silicon nitride E/R) to the oxide film etching rate (silicon oxide E/R).
The concentration of the additive in the invention is mass percent, namely the mass of the additive accounts for the total mass of the etching solution.
(2) Life detection method
In both of silicon oxide film etching and silicon nitride film etching, the etching metabolite contains silicon dioxide, and the concentration of silicon dioxide dissolved in the etching solution gradually increases as the etching time increases. Thus, an etching solution in which the concentration of silicon dioxide was gradually increased (0ppm/80ppm/120ppm/300ppm/500ppm) was prepared as an initial etching solution, and the etching rates and the selectivity of silicon oxide and silicon nitride were measured, respectively.
After dissolving silicon dioxide with different concentrations in the etching solutions of examples 1-5 and comparative examples 1 and 2, etching experiments were performed, and the etching rates of silicon oxide and silicon nitride were respectively measured and selected as follows:
i. the etching rates and selectivity for silicon oxide and silicon nitride etched using the etching solutions of examples 1-5 and comparative examples 1 and 2 at an initial silicon dioxide concentration of 0ppm are detailed in Table 1:
TABLE 1 etch rates and selectivity for silicon oxide and silicon nitride at an initial silicon dioxide concentration of 0ppm
Figure BDA0002633315770000061
Figure BDA0002633315770000071
Note: within the error range of the experimental system of the present invention, the selection ratio is preferably within the range of 500-900. The over-etching phenomenon is gradually aggravated when the height is lower, and the back-wetting phenomenon is gradually aggravated when the height is higher.
The etching rates and selectivity for silicon oxide and silicon nitride etched using the etching solutions of examples 1-5 and comparative examples 1 and 2 at an initial silicon dioxide concentration of 80ppm are detailed in table 2:
TABLE 2 etch rates and selectivity for silicon oxide and silicon nitride at an initial silicon dioxide concentration of 80ppm
Figure BDA0002633315770000072
The etching rates and selectivity for silicon oxide and silicon nitride etched using the etching solutions of examples 1-5 and comparative examples 1 and 2 at an initial silicon dioxide concentration of 120ppm are detailed in table 3:
TABLE 3 etch rates and selectivity for silicon oxide and silicon nitride at an initial silicon dioxide concentration of 120ppm
Figure BDA0002633315770000073
Figure BDA0002633315770000081
The etching rates and selectivity for silicon oxide and silicon nitride etched using the etching solutions of examples 1-5 and comparative examples 1 and 2 at an initial silicon dioxide concentration of 300ppm are detailed in table 4:
TABLE 4 etch rates and selectivity for silicon oxide and silicon nitride at an initial silicon dioxide concentration of 300ppm
Figure BDA0002633315770000082
The etch rates and selectivity for silicon oxide and silicon nitride etched using the etching solutions of examples 1-5 and comparative examples 1 and 2 at an initial silicon dioxide concentration of 500ppm are detailed in table 5:
TABLE 5 etch rates and selectivity for silicon oxide and silicon nitride at an initial silicon dioxide concentration of 500ppm
Figure BDA0002633315770000083
Figure BDA0002633315770000091
From the above experimental results, the etching solutions in examples 1-5 have good selectivity within 500-1000, while the etching solution in comparative example 1 has a more severe back-staining phenomenon due to the additive being compound B, and the etching solution in comparative example 2 has a more severe over-etching phenomenon due to no additive.
3. Etching of a layered structure with different numbers of layers
Etching an object: silicon wafer having a cross-laminated structure of
Figure BDA0002633315770000093
And a silicon oxide layer of
Figure BDA0002633315770000094
The silicon nitride layers of (2) are cross-laminated. The number of layers of the laminated structure is respectively as follows: 32 layers/64 layers/128 layers/192 layers.
Etching conditions: the initial concentration of silicon dioxide in the etching solution was 0 ppm.
The detection method comprises the following steps: after etching the wafer at 159 ℃. + -. 2 ℃ for 10min, the wafer was taken out, washed, dried and the etching of the layered structure in the wafer was observed by TEM section. The etching experiments were carried out using the etching solutions of examples 1 to 5 and comparative examples 1 and 2, and the etching results are shown in table 6:
table 6 results of etching of silicon wafers having a cross laminated structure with the etching solutions in examples 1 to 5 and comparative examples 1 and 2
Figure BDA0002633315770000092
Figure BDA0002633315770000101
Evaluation criteria: the A level is the etching completion of the silicon nitride layer and the silicon oxide layer is not damaged; the B level is the silicon nitride layer which is etched but damaged; the C level is that the silicon nitride layer is not etched.
From the above experimental results, it was found that the etching solutions of examples 1 to 3 were used for the above etching experiments to completely etch the silicon wafers having 32, 64, 128 and 192 layers without damaging the silicon oxide layer. The etching solution in example 4 was subjected to the above-described etching experiment to etch the silicon nitride layers of the 32-, 64-, 128-and 192-layer silicon wafers but damage the silicon oxide layers. The etching solutions in example 5 and comparative example 1 were subjected to the above-described etching experiment to finish etching of the silicon nitride layer. The etching solution in comparative example 2 was subjected to the above-described etching experiment to completely etch the silicon nitride layers of the 32-layer and 64-layer silicon wafers but to damage the silicon oxide layers, and to incompletely etch the silicon nitride layers of the 128-layer and 192-layer silicon wafers.

Claims (10)

1. The etching solution composition is characterized by being prepared from the following raw materials in parts by mass: 75-85% of phosphoric acid, 0.1-12% of compound A and 3-24% of water, wherein the mass fraction is the mass percentage of each component in the total mass of each component;
Figure FDA0002633315760000011
2. the etching solution composition as claimed in claim 1, wherein the water is one or more of deionized water, distilled water, pure water and ultrapure water;
and/or the etching solution composition is used for etching the silicon nitride film;
and/or the mass fraction of the phosphoric acid is 77%, 78%, 81%, 84% or 85%;
and/or the mass fraction of the compound A is 0.5-10%;
and/or the raw materials of the etching solution composition consist of the phosphoric acid, the compound A and the water.
3. The etching solution composition as claimed in claim 2, wherein the mass fraction of the compound A is 1.0-9.5%;
and/or, when the etching solution composition is an etching solution composition for etching a silicon nitride film, the etching is performed in the presence of a silicon oxide film;
and/or, the silicon nitride film is a silicon nitride film formed on a patterned silicon semiconductor wafer;
and/or the thickness of the silicon nitride film is
Figure FDA0002633315760000012
4. The etching solution composition according to claim 3, wherein when the etching solution composition is an etching solution composition for etching a silicon nitride film, the silicon oxide film is a silicon oxide film formed on a patterned silicon semiconductor wafer when the etching is performed in the presence of the silicon oxide film;
and/or the thickness of the silicon oxide film is
Figure FDA0002633315760000013
And/or the silicon oxide film and the silicon nitride film are of a laminated structure of the silicon oxide film and the silicon nitride film, and the number of layers of the laminated structure can be 10-200.
5. The etching solution composition as claimed in claim 1, wherein the raw materials of the etching solution composition are composed of any one of the following schemes:
the first scheme is as follows:
the raw materials of the etching solution composition consist of 4.50 percent of compound A, 81 percent of phosphoric acid and 14.5 percent of water;
scheme II:
the raw materials of the etching solution composition consist of 1.0 percent of compound A, 84 percent of phosphoric acid and 15 percent of water;
the third scheme is as follows:
the raw materials of the etching solution composition consist of 9.50 percent of compound A, 78 percent of phosphoric acid and 12.5 percent of water;
and the scheme is as follows:
the raw materials of the etching solution composition consist of 0.50 percent of compound A, 85 percent of phosphoric acid and 14.5 percent of water;
and a fifth scheme:
the raw materials of the etching solution composition consist of 10.0 percent of compound A, 77 percent of phosphoric acid and 13 percent of water.
6. A method for preparing the etching solution composition according to any one of claims 1 to 5, comprising the steps of: and mixing the phosphoric acid, the compound A and the water to obtain the etching solution composition.
7. Use of the etching liquid composition as claimed in any one of claims 1 to 5 for etching a silicon nitride film.
8. The application of a compound A in preparing an etching solution;
Figure FDA0002633315760000021
9. the use according to claim 8, wherein the compound a is present in the etching solution in a mass fraction of 0.1% to 12%, such as 0.5% to 10%, for example 1.0% to 9.5%;
and/or the etching solution contains phosphoric acid, and the mass fraction of the phosphoric acid in the etching solution can be 75-85%;
and/or the etching solution contains water, and the mass fraction of the water in the etching solution can be 3-24%;
and/or the etching solution is used for etching a silicon nitride film, the etching can be carried out in the presence of a silicon oxide film, the definition of the silicon nitride film can be defined as the claim 3 or 4, and the definition of the silicon oxide film can be defined as the claim 4.
10. The application of claim 8, wherein the raw materials of the etching solution are composed of any one of the following schemes:
scheme A:
the raw materials of the etching solution consist of 4.50 percent of compound A, 81 percent of phosphoric acid and 14.5 percent of water;
scheme B:
the raw materials of the etching solution consist of 1.0 percent of compound A, 84 percent of phosphoric acid and 15 percent of water;
scheme C:
the raw materials of the etching solution consist of 9.50 percent of compound A, 78 percent of phosphoric acid and 12.5 percent of water;
scheme D:
the raw materials of the etching solution consist of 0.50 percent of compound A, 85 percent of phosphoric acid and 14.5 percent of water;
scheme E:
the raw materials of the etching solution consist of 10.0 percent of compound A, 77 percent of phosphoric acid and 13 percent of water.
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Cited By (1)

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CN110437837A (en) * 2018-05-03 2019-11-12 三星Sdi株式会社 Etch combination for silicon nitride and the method that is etched using it
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CN103160282A (en) * 2011-12-16 2013-06-19 爱思开海力士有限公司 Etching composition and method for fabricating semiconductor device using the same
CN111108176A (en) * 2017-09-06 2020-05-05 恩特格里斯公司 Compositions and methods for etching silicon nitride-containing substrates
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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN115287071A (en) * 2022-07-06 2022-11-04 湖北兴福电子材料有限公司 C-free high-selectivity silicon nitride etching solution
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WO2024007627A1 (en) * 2022-07-06 2024-01-11 湖北兴福电子材料股份有限公司 C-free high-selectivity silicon nitride etching solution

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