CN111925805B - Etching solution composition, preparation method and application thereof - Google Patents
Etching solution composition, preparation method and application thereof Download PDFInfo
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- CN111925805B CN111925805B CN202010817676.5A CN202010817676A CN111925805B CN 111925805 B CN111925805 B CN 111925805B CN 202010817676 A CN202010817676 A CN 202010817676A CN 111925805 B CN111925805 B CN 111925805B
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- 238000005530 etching Methods 0.000 title claims abstract description 187
- 239000000203 mixture Substances 0.000 title claims abstract description 56
- 238000002360 preparation method Methods 0.000 title claims abstract description 10
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 claims abstract description 80
- 150000001875 compounds Chemical class 0.000 claims abstract description 47
- 229910000147 aluminium phosphate Inorganic materials 0.000 claims abstract description 40
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims abstract description 37
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 96
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 78
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 78
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 67
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 15
- 229910052710 silicon Inorganic materials 0.000 claims description 15
- 239000010703 silicon Substances 0.000 claims description 15
- 239000004065 semiconductor Substances 0.000 claims description 13
- 239000007788 liquid Substances 0.000 claims description 8
- 238000000034 method Methods 0.000 claims description 4
- 238000004140 cleaning Methods 0.000 claims description 2
- 239000008367 deionised water Substances 0.000 claims description 2
- 229910021641 deionized water Inorganic materials 0.000 claims description 2
- 239000012153 distilled water Substances 0.000 claims description 2
- 238000001035 drying Methods 0.000 claims description 2
- 239000000463 material Substances 0.000 claims description 2
- 238000002156 mixing Methods 0.000 claims description 2
- 229910021642 ultra pure water Inorganic materials 0.000 claims description 2
- 239000012498 ultrapure water Substances 0.000 claims description 2
- 239000000243 solution Substances 0.000 description 61
- 239000010408 film Substances 0.000 description 42
- 235000012239 silicon dioxide Nutrition 0.000 description 15
- 239000000377 silicon dioxide Substances 0.000 description 14
- 235000012431 wafers Nutrition 0.000 description 13
- 239000000654 additive Substances 0.000 description 5
- 238000002474 experimental method Methods 0.000 description 5
- 150000004767 nitrides Chemical class 0.000 description 5
- 230000000996 additive effect Effects 0.000 description 4
- 230000000052 comparative effect Effects 0.000 description 4
- 239000007864 aqueous solution Substances 0.000 description 3
- 238000001514 detection method Methods 0.000 description 3
- 239000002994 raw material Substances 0.000 description 3
- 239000003814 drug Substances 0.000 description 2
- 239000002245 particle Substances 0.000 description 2
- 239000002244 precipitate Substances 0.000 description 2
- 229940126062 Compound A Drugs 0.000 description 1
- NLDMNSXOCDLTTB-UHFFFAOYSA-N Heterophylliin A Natural products O1C2COC(=O)C3=CC(O)=C(O)C(O)=C3C3=C(O)C(O)=C(O)C=C3C(=O)OC2C(OC(=O)C=2C=C(O)C(O)=C(O)C=2)C(O)C1OC(=O)C1=CC(O)=C(O)C(O)=C1 NLDMNSXOCDLTTB-UHFFFAOYSA-N 0.000 description 1
- 239000003153 chemical reaction reagent Substances 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000011156 evaluation Methods 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000000691 measurement method Methods 0.000 description 1
- 239000002207 metabolite Substances 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 230000002035 prolonged effect Effects 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- LIVNPJMFVYWSIS-UHFFFAOYSA-N silicon monoxide Chemical compound [Si-]#[O+] LIVNPJMFVYWSIS-UHFFFAOYSA-N 0.000 description 1
- 239000007858 starting material Substances 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 238000001039 wet etching Methods 0.000 description 1
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- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K13/00—Etching, surface-brightening or pickling compositions
- C09K13/04—Etching, surface-brightening or pickling compositions containing an inorganic acid
- C09K13/06—Etching, surface-brightening or pickling compositions containing an inorganic acid with organic material
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3105—After-treatment
- H01L21/311—Etching the insulating layers by chemical or physical means
- H01L21/31105—Etching inorganic layers
- H01L21/31111—Etching inorganic layers by chemical means
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- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Inorganic Chemistry (AREA)
- General Chemical & Material Sciences (AREA)
- Organic Chemistry (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Materials Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Weting (AREA)
Abstract
The invention discloses an etching solution composition, and preparation and application thereof. Specifically, the etching solution composition comprises the following components in parts by weightThe following components: 76.5-84.6 parts of phosphoric acid, 13.5-15 parts of water and 0.5-10 parts of a compound shown as a formula A. The compound and the composition shown in the formula A can provide high selectivity ratio, prolong the service life of the etching solution and adapt to the increase of the number of layers of a laminated structure.
Description
Technical Field
The invention relates to an etching solution composition, a preparation method and application thereof.
Background
An oxide film such as a silicon oxide film and a nitride film such as a silicon nitride film are representative insulator films, and in a semiconductor manufacturing process, the silicon oxide film or the silicon nitride film may be used alone or in the form of a stacked body (laminate) in which one or more thin films are alternately stacked. In addition, the oxide film or the nitride film is also used as a hard mask for forming a conductive pattern such as a metal wiring.
In the wet etching process for removing the nitride film, an aqueous phosphoric acid solution is generally used. There are many problems with the aqueous phosphoric acid solution alone, such as: the etching rate selection ratio of silicon oxide and silicon nitride is improper, and more particles and precipitates exist in the solution in a short time in the process, so that the service life of liquid medicine is short, the increase of the layer number of the laminated structure cannot be adapted, and the like.
In order to solve these problems, it is considered to add an additive to the phosphoric acid aqueous solution to improve the etching capability of the phosphoric acid aqueous solution.
Disclosure of Invention
The invention aims to solve the technical problem that in the prior art, the etching rate selection ratio of silicon oxide and silicon nitride is not proper, and the defects that the service life of liquid medicine is short and the number of layers of a laminated structure cannot be increased due to more particles and precipitates in the solution in a short time in the process are overcome, and the like, and provides an etching solution, a preparation method and application thereof. The etching rate selection ratio of silicon oxide and silicon nitride etched by the etching solution is proper, the service life of the etching solution is prolonged, and the etching capability of phosphoric acid aqueous solution can be effectively improved.
The present invention solves the above technical problems by the following technical solutions.
The invention provides an etching solution composition which comprises the following components in parts by weight:
76.5-84.6 parts of phosphoric acid, 13.5-15 parts of water and 0.5-10 parts of compound shown as a formula A
In some embodiments of the present invention, the mass part of the compound represented by formula a is 0.5 to 9.5 parts, for example, 0.5 part, 1.0 part, 4.5 parts, 9.5 parts, or 10.0 parts, preferably 1 to 9.5 parts, and more preferably 4.5 parts.
In some embodiments of the present invention, the content of the phosphoric acid may be 76.9 to 84.6 parts, for example 76.5 parts, 76.9 parts, 81.2 parts, 84.1 parts or 84.6 parts, preferably 76.9 to 84.1 parts, and more preferably 81.2 parts by weight.
In some embodiments of the invention, the water may be one or more of deionized water, distilled water, pure water, and ultrapure water.
In some embodiments of the present invention, the water content may be 13.5 to 14.9 parts, for example, 13.5 parts, 13.6 parts, 14.3 parts, 14.8 parts or 14.9 parts, preferably 13.6 to 14.8 parts, and more preferably 14.3 parts by weight.
In some embodiments of the present invention, the etching solution comprises the following components: a compound represented by formula A, phosphoric acid and water.
In some embodiments of the present invention, the etching solution composition comprises the following components: 76.5-84.6% of phosphoric acid, 13.5-15% of water and 0.5-10% of a compound shown as a formula A, wherein the percentage is that the mass of each component accounts for the mass of the etching solution.
In some embodiments of the invention, the etching solution composition comprises the following components: 76.9-84.6 wt% of phosphoric acid, 13.1-15 wt% of water and 0.5-9.5 wt% of a compound shown as a formula A, wherein the percentage is that the mass of each component accounts for the mass of the etching solution.
In some embodiments of the invention, the etching solution composition comprises the following components: 76.9-84.1% of phosphoric acid, 13.6-15.7% of water and 1-9.5% of a compound shown as a formula A, wherein the percentage is that the mass of each component accounts for the mass of the etching solution.
In some embodiments of the present invention, the etching solution composition comprises the following components: 76.5-84.6% of phosphoric acid, 13.5-15% of water and 0.5-10% of a compound shown as a formula A, wherein the percentage is that the mass of each component accounts for the mass of the etching solution.
In some embodiments of the present invention, the etching solution composition comprises the following components: 76.9-84.6 wt% of phosphoric acid, 13.1-15 wt% of water and 0.5-9.5 wt% of a compound shown as a formula A, wherein the percentage is that the mass of each component accounts for the mass of the etching solution.
In some embodiments of the present invention, the etching solution composition comprises the following components: 76.9 to 84.1 percent of phosphoric acid, 13.6 to 15.7 percent of water and 1 to 9.5 percent of compound shown as the formula A, wherein the percentage is the mass percentage of each component in the etching solution.
In some embodiments of the present invention, the etching solution composition comprises the following components: 0.5 percent of compound shown as formula A, 84.6 percent of phosphoric acid and 14.9 percent of water, wherein the percentage is that the mass of each component accounts for the mass of the etching solution.
In some embodiments of the present invention, the etching solution composition comprises the following components: 1% of a compound shown as a formula A, 84.1% of phosphoric acid and 14.9% of water, wherein the percentage is that the mass of each component accounts for the mass of the etching solution.
In some embodiments of the present invention, the etching solution composition comprises the following components: 4.5 percent of the compound shown as the formula A, 81.2 percent of phosphoric acid and 14.3 percent of water, wherein the percentage is that the mass of each component accounts for the mass of the etching solution.
In some embodiments of the present invention, the etching solution comprises the following components: 9.5 percent of the compound shown as the formula A, 76.9 percent of phosphoric acid and 13.5 percent of water, wherein the percentage is that the mass of each component accounts for the mass of the etching solution.
In some embodiments of the present invention, the etching solution comprises the following components: 10 percent of compound shown as formula A, 76.5 percent of phosphoric acid and 13.5 percent of water, wherein the percentage is the percentage of the mass of each component in the etching solution.
In some embodiments of the present invention, when the etching liquid composition is an etching liquid composition for etching a silicon nitride film, the etching is performed in the presence of a silicon oxide film. The silicon nitride film may be a silicon nitride film formed on a patterned silicon semiconductor wafer. The thickness of the silicon nitride film can beThe silicon oxide film may be a silicon oxide film formed on a patterned silicon semiconductor wafer; the thickness of the silicon oxide film isThe silicon oxide film and the silicon nitride film are of a laminated structure of the silicon oxide film and the silicon nitride film, and the number of layers of the laminated structure can be 10-200.
The invention also provides application of the etching solution in etching silicon oxide and/or silicon nitride. The etching conditions and operations described may be those conventional in the art.
In the application, the etching solution is preferably used for etching silicon nitride.
In the application, when the etching is carried out in the presence of a silicon oxide film and a silicon nitride film, the etching solution composition is used for selectively etching the silicon nitride film; the silicon oxide film may be a silicon oxide film formed on a patterned silicon semiconductor wafer.
In the application, the silicon oxide and/or the silicon nitride can be applied to semiconductor materials.
In said application, said silicon nitride and/or silicon nitride film may have a thickness ofFor exampleAlso for exampleOr
In the application, the silicon oxide and/or the silicon nitride can be a laminated structure. In the laminated structure, the number of layers of the laminated structure can be 10-200, such as 32, 64, 128 or 192.
In such applications, the etching temperature may be 150 ℃ to 170 ℃, for example 159 ℃. + -. 2 ℃.
In the application, the etching time may be 600 seconds and 6500 seconds, for example, 720 seconds or 6000 seconds.
In the application, the etching may include the steps of: and etching the silicon oxide and/or the silicon nitride at the temperature of 150 ℃ and 170 ℃ for 600 seconds and 6500 seconds, taking out the silicon oxide and/or the silicon nitride, cleaning, drying, and observing the etching condition of the silicon oxide and/or the silicon nitride by using a TEM section.
The invention provides a preparation method of the etching solution, which comprises the following steps: and mixing the compound shown as the formula A, phosphoric acid and water to obtain the etching solution composition.
The invention also provides the application of the compound shown as the formula A in serving as an etching liquid compound;
in the application, the content of the compound shown in the formula A can be 0.5-10%, preferably 1.00-9.50%, and more preferably 4.50%, wherein the percentage is the mass of the compound shown in the formula A in the etching solution.
In the application, the content of the phosphoric acid is 13.5-14.9%, preferably 13.6-14.8%, and more preferably 14.3%, wherein the percentage is the mass percentage of the phosphoric acid in the etching solution.
In the application, the content of the water is 76.9-84.6%, preferably 76.9-84.1%, and more preferably 81.2%, wherein the percentage is the mass percentage of the water in the etching solution.
In the application, the etching solution can be as described in any of the above embodiments.
In the application, the etching solution can be used for etching silicon oxide and/or silicon nitride, preferably silicon nitride.
On the basis of the common knowledge in the field, the above preferred conditions can be combined randomly to obtain the preferred embodiments of the invention.
In the present invention, said compound represented by formula a is prepared by referring to patent application CN 108586518B.
The reagents and starting materials used in the present invention are commercially available.
The positive progress effects of the invention are as follows: the compound and the composition shown in the formula A can provide high selectivity ratio, prolong the service life of the etching solution and adapt to the increase of the number of layers of a laminated structure.
Detailed Description
The invention is further illustrated by the following examples, which are not intended to limit the scope of the invention. The experimental methods without specifying specific conditions in the following examples were selected according to the conventional methods and conditions, or according to the commercial instructions.
1 preparation of etching solution
Structure of compound a:
structure of compound B:
the preparation methods of the compound A and the compound B refer to patent CN 105254674B;
respectively adding A or B into pure phosphoric acid raw materials at room temperature to obtain etching solutions in examples 1-5 and comparative example 1; the etching solution in comparative example 2 was pure phosphoric acid as a raw material.
The pure phosphoric acid raw materials used in the invention are all concentrated phosphoric acid with the mass percentage of 85%. In the case of other concentrations of concentrated phosphoric acid, the amount of concentrated phosphoric acid converted to that concentration can be calculated by equivalent amounts.
2 detection of etch Rate
Etching an object: a silicon oxide film and a silicon nitride film; wherein the two films are deposited on the patterned silicon semiconductor wafer to a thickness ofAnd forming a deposit on the patterned silicon semiconductor wafer to a thickness ofThe silicon nitride film of (1).
Etching temperature: 159 ℃ plus or minus 2 ℃.
Etching container: a quartz tank.
Etching time: the silicon oxide film and the silicon nitride film were etched for 720 seconds and 6000 seconds, respectively.
The speed measurement method comprises the following steps: the film thicknesses of the silicon oxide film and the nitride film were measured before and after etching using a film thickness measuring apparatus (NANO VIEW, SEMG-1000), and the etching rate was calculated by dividing the difference between the initial thickness and the thickness after etching by the etching time (minutes). The selectivity ratio represents the ratio of the nitride film etching rate (SiNE/R) to the oxide film etching rate (SiO E/R).
The concentration of the compound in the invention is mass percent, namely the mass of the compound accounts for the total mass of the etching solution.
3 detection of Life
In both of silicon oxide film etching and silicon nitride film etching, the etching metabolite contains silicon dioxide, and the concentration of silicon dioxide dissolved in the etching solution gradually increases as the etching time increases. Thus, an etching solution in which the concentration of silicon dioxide was gradually increased (0ppm/80ppm/120ppm/300ppm/500ppm) was prepared as an initial etching solution, and the etching rates and the selectivity of silicon oxide and silicon nitride were measured, respectively.
The silicon oxide and silicon nitride etch rates and selectivity for various concentrations of a or B as phosphoric acid etch liquid compounds at an initial silicon dioxide concentration of 0ppm are detailed in table 1:
TABLE 1 etch rates and selectivity for silicon oxide and silicon nitride at an initial silicon dioxide concentration of 0ppm
Within the error range of the experimental system of the present invention, the selection ratio is preferably within the range of 500-900. The higher the rewet is, the more the overfetching is.
The etching rates and selectivity for silicon oxide and silicon nitride at an initial silicon dioxide concentration of 80ppm with different concentrations of compound a or B as an etching solution additive are detailed in table 2:
TABLE 2 etch rates and selectivity for silicon oxide and silicon nitride at an initial silicon dioxide concentration of 80ppm
The etching rates and selectivity for silicon oxide and silicon nitride at an initial silicon dioxide concentration of 120ppm with different concentrations of compound a or B as an etching solution additive are detailed in table 3:
TABLE 3 etch rates and selectivity for silicon oxide and silicon nitride at an initial silicon dioxide concentration of 120ppm
The etching rates and selectivity for silicon oxide and silicon nitride at an initial silicon dioxide concentration of 300ppm for various concentrations of compound a or B as an additive to the etching solution are detailed in table 4:
TABLE 4 etch rates and selectivity for silicon oxide and silicon nitride at an initial silicon dioxide concentration of 300ppm
The etching rates and selectivity for silicon oxide and silicon nitride at an initial silicon dioxide concentration of 500ppm with different concentrations of compounds a or B as etching solution additives are detailed in table 5:
TABLE 5 etch rates and selectivity for silicon oxide and silicon nitride at an initial silicon dioxide concentration of 500ppm
Etching of 4 layers of a laminated structure
Etching an object: silicon wafer having a cross-laminated structure ofAnd a silicon oxide layer ofThe silicon nitride layers of (2) are cross-laminated. The number of layers of the laminated structure is respectively as follows: 32 layers/64 layers/128 layers/192 layers.
Etching conditions: the initial concentration of silicon dioxide in the etching solution was 0 ppm.
The detection method comprises the following steps: after etching the wafer at 159 ℃. + -. 2 ℃ for 10min, the wafer was taken out, washed, dried and the etching of the layered structure in the wafer was observed by TEM section.
Evaluation criteria: the A level is the etching completion of the silicon nitride layer and the silicon oxide layer is not damaged; the B level is the silicon nitride layer which is etched but damaged; the C level is that the silicon nitride layer is not etched.
From examples 1 to 3, it is found that when the concentration of the compound a represented by the formula a is in the range of 1.00% to 9.50%, the etching solution was used in the above-described etching experiment to complete the etching of the silicon wafers having 32, 64, 128 and 192 layers without damaging the silicon oxide layer. The etching solution in example 4 was subjected to the above-described etching experiment to etch the silicon nitride layers of the silicon wafers of 32 layers, 64 layers, 128 layers and 192 layers, but the silicon oxide layers were damaged. The etching solutions in example 5 and comparative example 1 were subjected to the above-described etching experiment to finish etching of the silicon nitride layer. The etching solution in comparative example 2 was subjected to the above-described etching experiment to completely etch the silicon nitride layers of the 32-layer and 64-layer silicon wafers but to damage the silicon oxide layers, and to incompletely etch the silicon nitride layers of the 128-layer and 192-layer silicon wafers.
Claims (13)
2. the etching solution composition according to claim 1,
the etching solution composition is used for etching the silicon nitride film;
and/or the water is one or more of deionized water, distilled water, pure water and ultrapure water.
3. The etching solution composition according to claim 2,
when the etching solution composition is an etching solution composition for etching a silicon nitride film, the etching is performed in the presence of a silicon oxide film;
and/or, when the etching solution composition is an etching solution composition for etching a silicon nitride film, the silicon nitride film is a silicon nitride film formed on a patterned silicon semiconductor wafer;
4. The etching solution composition according to claim 3,
the content of the compound shown as the formula A is 4.5 parts by weight;
and/or, the content of the phosphoric acid is 81.2 parts by mass;
and/or, the content of the water is 14.3 parts by mass;
and/or, when the etching solution composition is an etching solution composition for etching a silicon nitride film, the etching is performed in the presence of a silicon oxide film, the silicon oxide film being a silicon oxide film formed on a patterned silicon semiconductor wafer;
and/or, when the etching solution composition is used for etching a silicon nitride film, the silicon oxide film has a thickness of
And/or, when the etching solution composition is an etching solution composition for etching a silicon nitride film, and the etching is performed in the presence of a silicon oxide film, the silicon oxide film and the silicon nitride film have a laminated structure of the silicon oxide film and the silicon nitride film.
5. The etching solution composition according to claim 3, wherein when the etching solution composition is an etching solution composition for etching a silicon nitride film, and the etching is performed in the presence of a silicon oxide film, the silicon oxide film and the silicon nitride film have a laminated structure of a silicon oxide film and a silicon nitride film, and the number of layers of the laminated structure is 10 to 200.
6. The etching solution composition according to any one of claims 1 to 5, wherein the etching solution composition is any one of the following:
scheme 1:
the etching solution composition comprises the following components: 1% of a compound shown as a formula A, 84.1% of phosphoric acid and 14.9% of water, wherein the percentage is that the mass of each component accounts for the mass of the etching solution;
scheme 2:
the etching solution composition comprises the following components: 4.5% of a compound shown as a formula A, 81.2% of phosphoric acid and 14.3% of water, wherein the percentage is that the mass of each component accounts for the mass of the etching solution;
scheme 3:
the etching solution composition comprises the following components: 9.5 percent of the compound shown as the formula A, 76.9 percent of phosphoric acid and 13.6 percent of water, wherein the percentage is that the mass of each component accounts for the mass of the etching solution.
7. Use of an etchant composition according to any one of claims 1 to 6 for etching silicon oxide and/or silicon nitride.
8. Use of the etching liquid composition according to claim 7 for etching silicon oxide and/or silicon nitride,
when the etching is carried out in the presence of a silicon oxide film and a silicon nitride film, the etching liquid composition is used for selectively etching the silicon nitride film; and/or, the silicon oxide and/or the silicon nitride are applied to a semiconductor material;
And/or the silicon oxide and/or the silicon nitride are in a laminated structure, and the number of layers of the laminated structure in the laminated structure is 10-200;
and/or the etching temperature is 150-170 ℃;
and/or the etching time is 600-6500 seconds;
and/or, the etching comprises the following steps: and etching the silicon oxide and/or the silicon nitride at the temperature of 150 ℃ and 170 ℃ for 600 seconds and 6500 seconds, taking out the silicon oxide and/or the silicon nitride, cleaning, drying, and observing the etching condition of the silicon oxide and/or the silicon nitride by using a TEM section.
9. Use of the etching solution composition according to claim 7 for etching silicon oxide and/or silicon nitride, wherein the etching solution composition is a selective etching silicon nitride film etching when the etching is in the presence of a silicon oxide film and a silicon nitride film; the silicon oxide film is formed on a patterned silicon semiconductor wafer.
10. A method for preparing the etching solution composition according to any one of claims 1 to 6, comprising the steps of: and (2) mixing the compound shown as the formula A, the phosphoric acid and the water to obtain the etching solution composition.
12. the use of a compound of formula A according to claim 11 for the preparation of an etching solution composition,
in the etching solution composition, the content of the compound shown as the formula A is 1.00-9.50%, wherein the percentage is the mass percentage of the compound shown as the formula A in the etching solution;
and/or the etching solution contains water, and the content of the water is 13.6% -14.9%, wherein the percentage is the percentage of the mass of the water in the mass of the etching solution;
and/or the etching solution contains phosphoric acid with the content of 76.9-84.1%, wherein the percentage is the mass percentage of the phosphoric acid in the etching solution;
and/or the etching solution is used for etching the silicon nitride film.
13. The use of the compound represented by the formula a according to claim 11 in the preparation of an etching solution composition, wherein the content of the compound represented by the formula a in the etching solution composition is 4.50%, wherein the percentage is the mass of the compound represented by the formula a in the etching solution;
and/or the etching solution contains 14.3% of water, wherein the percentage is the percentage of the mass of the water in the etching solution;
and/or the etching solution contains phosphoric acid with the content of 81.2 percent, wherein the percentage is the percentage of the mass of the phosphoric acid in the mass of the etching solution;
and/or, the etching is performed in the presence of a silicon oxide film, the silicon nitride film being a silicon nitride film formed on a patterned silicon semiconductor wafer, the silicon oxide film not being a silicon oxide film formed on the patterned silicon semiconductor wafer.
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KR20160050536A (en) * | 2014-10-30 | 2016-05-11 | 램테크놀러지 주식회사 | Etchant compositions for nitride layers and methods of manufacturing semiconductor devices using the same |
CN105254674B (en) * | 2015-10-26 | 2018-05-18 | 苏州科技大学 | Alkyl-dimethyl oxygroup silicic acid phosphine heterocycle methyl compound and preparation method thereof |
CN105384778B (en) * | 2015-10-26 | 2017-11-24 | 苏州科技大学 | The preparation method of fire retardant alkyl-dimethyl epoxide (phosphorus heterocycle methoxyl group) silane compound |
CN105175450B (en) * | 2015-10-26 | 2017-12-22 | 苏州科技大学 | The preparation method of methyl phenyl methoxy (phosphorus heterocycle methoxyl group) silane compound |
KR102399990B1 (en) * | 2017-09-06 | 2022-05-23 | 엔테그리스, 아이엔씨. | Compositions and Methods for Etching Substrates Comprising Silicon Nitride |
KR102258307B1 (en) * | 2018-09-03 | 2021-06-01 | 주식회사 이엔에프테크놀로지 | Silicon nitride layer etching composition and etching method using the same |
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