CN111925797B - High-selectivity silicon nitride etching solution, and preparation method and application thereof - Google Patents
High-selectivity silicon nitride etching solution, and preparation method and application thereof Download PDFInfo
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- 238000005530 etching Methods 0.000 title claims abstract description 156
- 229910052581 Si3N4 Inorganic materials 0.000 title claims abstract description 65
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 title claims abstract description 65
- 238000002360 preparation method Methods 0.000 title abstract description 6
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 claims abstract description 80
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims abstract description 64
- 229910052814 silicon oxide Inorganic materials 0.000 claims abstract description 51
- 150000001875 compounds Chemical class 0.000 claims abstract description 41
- 229910000147 aluminium phosphate Inorganic materials 0.000 claims abstract description 40
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims abstract description 37
- 239000004065 semiconductor Substances 0.000 claims description 8
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 6
- 229910052710 silicon Inorganic materials 0.000 claims description 6
- 239000010703 silicon Substances 0.000 claims description 6
- 239000000654 additive Substances 0.000 claims description 5
- 230000000996 additive effect Effects 0.000 claims description 5
- 238000000034 method Methods 0.000 claims description 3
- 238000002156 mixing Methods 0.000 claims description 3
- 238000004140 cleaning Methods 0.000 claims description 2
- 239000008367 deionised water Substances 0.000 claims description 2
- 229910021641 deionized water Inorganic materials 0.000 claims description 2
- 239000012153 distilled water Substances 0.000 claims description 2
- 238000001035 drying Methods 0.000 claims description 2
- 239000000463 material Substances 0.000 claims description 2
- 229910021642 ultra pure water Inorganic materials 0.000 claims description 2
- 239000012498 ultrapure water Substances 0.000 claims description 2
- 150000004767 nitrides Chemical class 0.000 abstract description 8
- 239000011248 coating agent Substances 0.000 abstract 1
- 238000000576 coating method Methods 0.000 abstract 1
- 239000000243 solution Substances 0.000 description 56
- 239000010408 film Substances 0.000 description 33
- 230000000052 comparative effect Effects 0.000 description 9
- 230000000694 effects Effects 0.000 description 6
- 235000012239 silicon dioxide Nutrition 0.000 description 6
- 239000000377 silicon dioxide Substances 0.000 description 6
- 239000007864 aqueous solution Substances 0.000 description 4
- 238000012360 testing method Methods 0.000 description 4
- 238000001514 detection method Methods 0.000 description 3
- 238000002474 experimental method Methods 0.000 description 2
- 239000007788 liquid Substances 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 239000003153 chemical reaction reagent Substances 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 239000003814 drug Substances 0.000 description 1
- 238000011156 evaluation Methods 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000000691 measurement method Methods 0.000 description 1
- 239000002207 metabolite Substances 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 239000002244 precipitate Substances 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 239000007858 starting material Substances 0.000 description 1
- 238000003756 stirring Methods 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 238000001039 wet etching Methods 0.000 description 1
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- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K13/00—Etching, surface-brightening or pickling compositions
- C09K13/04—Etching, surface-brightening or pickling compositions containing an inorganic acid
- C09K13/06—Etching, surface-brightening or pickling compositions containing an inorganic acid with organic material
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3105—After-treatment
- H01L21/311—Etching the insulating layers by chemical or physical means
- H01L21/31105—Etching inorganic layers
- H01L21/31111—Etching inorganic layers by chemical means
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- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Inorganic Chemistry (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Physics & Mathematics (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
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Abstract
The invention discloses a high-selectivity ratio silicon nitride etching solution, a preparation method and application thereof. The invention particularly discloses an etching solutionThe coating comprises the following components in parts by mass: 0.2-12.5 parts of a compound shown as a formula A, 74.2-85.1 parts of phosphoric acid and 12.9-15.6 parts of water. The etching solution can improve the etching selection ratio of silicon oxide to silicon nitride, selectively remove nitride films, prolong the service life of the etching solution and adapt to the increase of the number of layers of a laminated structure.
Description
Technical Field
The invention relates to a high-selectivity ratio silicon nitride etching solution, a preparation method and application thereof.
Background
An oxide film such as a silicon oxide film and a nitride film such as a silicon nitride film are representative insulator films, and in a semiconductor manufacturing process, the silicon oxide film or the silicon nitride film may be used alone or in the form of a stacked body (laminate) in which one or more thin films are alternately stacked. In addition, the oxide film or the nitride film is also used as a hard mask for forming a conductive pattern such as a metal wiring.
In the wet etching process for removing the nitride film, an aqueous phosphoric acid solution is generally used. There are many problems with the aqueous phosphoric acid solution alone, such as: the etching rate selection ratio of silicon oxide and silicon nitride is improper, and more particles and precipitates exist in the solution in a short time in the process, so that the service life of liquid medicine is short, the increase of the layer number of the laminated structure cannot be adapted, and the like.
In order to solve these problems, it is considered that an additive is added to the phosphoric acid aqueous solution to improve the etching capability of the phosphoric acid aqueous solution.
Disclosure of Invention
The invention aims to overcome the defects that the existing etching solution has poor etching selectivity to silicon oxide and silicon nitride, has short service life, cannot adapt to the increase of the number of layers of a laminated structure and the like, and provides the silicon nitride etching solution with high selectivity ratio, the preparation method and the application thereof. The etching solution can improve the etching selection ratio of silicon oxide to silicon nitride, selectively remove nitride films, prolong the service life of the etching solution and adapt to the increase of the number of layers of a laminated structure.
The invention solves the technical problems through the following technical scheme.
The invention provides an etching solution which comprises the following components in parts by weight: 0.2-12.5 parts of a compound shown as a formula A, 74.2-85.1 parts of phosphoric acid and 12.9-15.6 parts of water;
in some embodiments of the present invention, the compound represented by formula a may be present in an amount of 0.5 to 10.0 parts, for example, 0.5 part, 1.0 part, 4.5 parts, 9.5 parts or 10.0 parts, preferably 1.0 to 9.5 parts, and more preferably 4.5 parts by weight.
In some embodiments of the present invention, the content of the phosphoric acid may be 76.5 to 84.6 parts, for example 76.5 parts, 76.9 parts, 81.2 parts, 84.1 parts or 84.6 parts, preferably 76.9 to 84.1 parts, and more preferably 81.2 parts by weight.
In certain embodiments of the invention, the mass ratio of the phosphoric acid to the compound of formula A may be 7.6:1 to 169.1:1, such as 7.6:1, 8.1:1, 18.0:1, 84.1:1, or 169.1:1, preferably 8.1:1 to 84.1:1, and more preferably 18.0: 1.
In some embodiments of the invention, the water may be one or more of deionized water, distilled water, pure water, and ultrapure water.
In some embodiments of the present invention, the water content may be 13.5 to 14.9 parts, for example, 13.5 parts, 13.6 parts, 14.3 parts, 14.8 parts or 14.9 parts, preferably 13.6 to 14.8 parts, and more preferably 14.3 parts by weight.
In some embodiments of the present invention, the etching solution comprises the following components in parts by mass: a compound represented by formula A, phosphoric acid and water.
In some embodiments of the present invention, the etching solution comprises the following components: 0.5-10.0% of a compound shown as a formula A, 76.5-84.6% of phosphoric acid and the balance of water, wherein the percentage is that the mass of each component accounts for the mass of the etching solution.
In some embodiments of the present invention, the etching solution comprises the following components: 1.0-9.5% of a compound shown as a formula A, 76.9-84.1% of phosphoric acid and the balance of water, wherein the percentage is that the mass of each component accounts for the mass of the etching solution.
In some embodiments of the present invention, the etching solution comprises the following components: 0.5 percent of compound shown as formula A, 84.6 percent of phosphoric acid and 14.9 percent of water, wherein the percentage is that the mass of each component accounts for the mass of the etching solution.
In some embodiments of the present invention, the etching solution comprises the following components: 1.0 percent of compound shown as formula A, 84.1 percent of phosphoric acid and 14.8 percent of water, wherein the percentage is that the mass of each component accounts for the mass of the etching solution.
In some embodiments of the present invention, the etching solution comprises the following components: 4.5 percent of the compound shown as the formula A, 81.2 percent of phosphoric acid and 14.3 percent of water, wherein the percentage is that the mass of each component accounts for the mass of the etching solution.
In some embodiments of the present invention, the etching solution comprises the following components: 9.5 percent of the compound shown as the formula A, 76.9 percent of phosphoric acid and 13.6 percent of water, wherein the percentage is that the mass of each component accounts for the mass of the etching solution.
In some embodiments of the present invention, the etching solution comprises the following components: 10.0% of a compound shown as a formula A, 76.5% of phosphoric acid and 13.5% of water, wherein the percentage is that the mass of each component accounts for the mass of the etching solution.
In some embodiments of the present invention, the etching solution is an etching solution for etching silicon oxide and/or silicon nitride, preferably an etching solution for etching silicon nitride. The silicon oxide and/or silicon nitride may be a silicon oxide film and/or a silicon nitride film formed on a patterned silicon semiconductor wafer. The thickness of the silicon oxide film and/or the silicon nitride film can be
The silicon oxide and/or the silicon nitride can be of a laminated structure, and the number of layers of the laminated structure can be 20-200.
The invention also provides application of the etching solution in etching silicon oxide and/or silicon nitride. The etching conditions and operations described may be those conventional in the art.
In the application, the etching solution is preferably used for etching silicon nitride.
In the application, the silicon oxide and/or the silicon nitride can be applied to semiconductor materials.
In the application, the thickness of the silicon oxide and/or the silicon nitride can be
For example
Or
In the application, the silicon oxide and/or the silicon nitride can be a laminated structure. The number of layers of the laminated structure may be 20 to 200, for example 32, 64, 128 or 192 layers.
In such applications, the etching temperature may be 150-165 ℃, for example 159 ℃. + -. 2 ℃.
In the application, the etching time may be 500-.
In the application, the etching may include the steps of: and etching the silicon oxide and/or the silicon nitride at the temperature of 150-165 ℃ for 500-6500 seconds, taking out the silicon oxide and/or the silicon nitride, cleaning, drying, and observing the etching condition of the silicon oxide and/or the silicon nitride by using a TEM section.
The invention provides a preparation method of the etching solution, which comprises the following steps: and mixing the compound shown as the formula A, phosphoric acid and water.
The invention also provides application of the compound shown as the formula A in serving as an etching solution additive;
in the application, the content of the compound shown in the formula A can be 0.5-10.0%, preferably 1.0-9.5%, and more preferably 4.5%, wherein the percentage is the mass percentage of the compound shown in the formula A in the etching solution.
In the application, the etching solution may further include phosphoric acid, and the content of the phosphoric acid may be 76.5% to 84.6%, for example 76.5%, 76.9%, 81.2%, 84.1% or 84.6%, preferably 76.9% to 84.1%, and more preferably 81.2%, where the percentage is the mass percentage of the phosphoric acid in the etching solution.
In the application, the etching solution may further include water, and the content of the water may be 13.5% to 14.9%, for example, 13.5%, 13.6%, 14.3%, 14.8% or 14.9%, preferably 13.6% to 14.8%, and more preferably 14.3%, wherein the percentage is the mass of the water in the etching solution.
In the application, the etching solution can be as described in any of the above embodiments.
In the application, the etching solution can be used for etching silicon oxide and/or silicon nitride, preferably silicon nitride.
On the basis of the common knowledge in the field, the above preferred conditions can be combined randomly to obtain the preferred embodiments of the invention.
In the present invention, the compound represented by formula A is prepared by referring to patent application CN 108586518B.
The reagents and starting materials used in the present invention are commercially available.
The positive progress effects of the invention are as follows: the etching solution composition can improve the etching selection ratio of silicon oxide to silicon nitride, selectively remove nitride films, prolong the service life of the etching solution and adapt to the increase of the number of layers of a laminated structure.
Detailed Description
The invention is further illustrated by the following examples, which are not intended to limit the scope of the invention. The experimental methods without specifying specific conditions in the following examples were selected according to the conventional methods and conditions, or according to the commercial instructions.
In the comparative examples described below, the compounds represented by formula B were prepared by reference to patent application CN 108586518B.
Examples 1 to 5 and comparative examples 1 to 2
In examples 1 to 5 and comparative examples 1 to 2 described below, phosphoric acid was used in an aqueous solution containing 85% by mass of phosphoric acid. The mass percentages of compound a and compound B (i.e., the percentage of the compounds based on the total mass of the etching solution) are listed in table 1.
In the following examples and comparative examples, the etching solutions were prepared by mixing the compound a or the compound B with an 85% phosphoric acid aqueous solution and stirring the mixture uniformly.
TABLE 1
Effect example 1: detection of etch Rate
Etching an object: a silicon oxide film and a silicon nitride film; wherein the two films are deposited on the patterned silicon semiconductor wafer to a thickness of
And forming a deposit on the patterned silicon semiconductor wafer to a thickness of
The silicon nitride film of (1).
Etching temperature: 159 ℃ plus or minus 2 ℃.
Etching container: a quartz tank.
Etching time: the silicon oxide film and the silicon nitride film were etched for 720 seconds and 6000 seconds, respectively.
Initial silica concentration: 0 ppm.
The speed measurement method comprises the following steps: the film thicknesses of the silicon oxide film and the nitride film were measured before and after etching using a film thickness measuring apparatus (NANO VIEW, SEMG-1000), and the etching rate was calculated by dividing the difference between the initial thickness and the thickness after etching by the etching time (minutes) (unit)
In/min). The selectivity ratio represents a ratio of the nitride film etching rate to the oxide film etching rate.
The results of the tests of the etching solutions prepared in examples 1 to 5 and comparative examples 1 to 2 are shown in table 2.
TABLE 2
In the etching experiment, the etching gradually becomes worse when the selection ratio is lower, and the reflow gradually becomes worse when the selection ratio is higher. As can be seen from Table 2, the selectivity of the etching solutions obtained in examples 1-5 of the present invention is 300-1000, preferably 500-9000, which shows no over-etching and back-sticking phenomena, such as in examples 2-4, which shows that the etching solutions of the present invention have high selectivity for silicon nitride films, and little or no silicon oxide films are etched while silicon nitride films are etched.
Effect example 2: detection of etching liquid lifetime
In both of silicon oxide film etching and silicon nitride film etching, the etching metabolite contains silicon dioxide, and the concentration of silicon dioxide dissolved in the etching solution gradually increases as the etching time increases. Thus, an etching solution in which the concentration of silicon dioxide was gradually increased (0ppm/80ppm/120ppm/300ppm/500ppm) was prepared as an initial etching solution, and the etching rates and the selectivity of silicon oxide and silicon nitride were measured, respectively.
The results of the tests of the etching solutions prepared in examples 1 to 5 and comparative examples 1 to 2 are shown in Table 3.
TABLE 3
As shown in Table 3, the selectivity of the etching solution prepared by the present invention is still at 300-1000, preferably 500-900, with the increase of the concentration of silicon dioxide, which still shows good selectivity, indicating that the etching solution prepared by the present invention has a long service life.
Effect example 3: etch testing of a layered structure with different numbers of layers
Etching an object: silicon wafer having a cross-laminated structure of
And a silicon oxide layer of
The silicon nitride layers of (2) are cross-laminated. The number of layers of the laminated structure is respectively as follows: 32 layers/64 layers/128 layers/192 layers.
Etching conditions: the initial concentration of silicon dioxide in the etching solution was 0 ppm.
The detection method comprises the following steps: after etching the wafer at 159 ℃. + -. 2 ℃ for 10min, the wafer was taken out, washed, dried and the etching of the layered structure in the wafer was observed by TEM section.
Evaluation criteria: the A level is the etching completion of the silicon nitride layer and the silicon oxide layer is not damaged; the B level is the silicon nitride layer which is etched but damaged; the C level is that the silicon nitride layer is not etched.
The results of the tests of the etching solutions prepared in examples 1 to 5 and comparative examples 1 to 2 are shown in Table 4.
TABLE 4
| Numbering | 32 layers | 64 layers | 128 layers | 192 layers |
| Example 1 | A | A | A | A |
| Example 2 | A | A | A | A |
| Example 3 | A | A | A | A |
| Example 4 | B | B | B | B |
| Example 5 | C | C | C | C |
| Comparative example 1 | C | C | C | C |
| Comparative example 2 | B | B | C | C |
As can be seen from table 4, the etching solutions prepared in examples 1 to 3 of the present invention all showed excellent etching effects on the stacked structures with different numbers of layers, and the silicon nitride layer was etched while the silicon oxide layer was not damaged. The etching solution prepared in embodiment 4 of the present invention has a good etching effect on stacked structures with different numbers of layers, and the silicon oxide layer has little damage while the etching of the silicon nitride layer is completed.
Claims (12)
1. The etching solution is characterized by comprising the following components in parts by mass: 1.0-9.5 parts of a compound shown as a formula A, 76.9-84.1 parts of phosphoric acid and 13.6-14.8 parts of water;
2. the etching solution according to claim 1,
the water is one or more of deionized water, distilled water, pure water and ultrapure water;
and/or the etching solution is used for etching silicon oxide and/or silicon nitride.
3. The etching solution according to claim 2,
the mass ratio of the phosphoric acid to the compound shown as the formula A is 8.1:1-84.1: 1;
and/or the etching solution is used for etching silicon nitride;
and/or the etching solution is used for etching silicon oxide and/or silicon nitride, and the silicon oxide and/or the silicon nitride are/is a silicon oxide film and/or a silicon nitride film formed on a patterned silicon semiconductor wafer;
and/or the etching solution is used for etching silicon oxide and/or silicon nitride, the silicon oxide and/or the silicon nitride are in a laminated structure, and the number of layers of the laminated structure is 20-200.
4. The etching solution according to claim 3,
the content of the compound shown in the formula A is 1.0 part, 4.5 parts and 9.5 parts by weight;
and/or the content of the phosphoric acid is 76.9 parts, 81.2 parts and 84.1 parts by weight;
and/or the mass ratio of the phosphoric acid to the compound shown in the formula A is 8.1:1, 18.0:1 and 84.1: 1;
and/or the water content is 13.6 parts, 14.3 parts and 14.8 parts by weight;
and/or the etching solution is used for etching silicon oxide and/or silicon nitride, and the silicon oxide and/or the silicon nitride are/is a silicon oxide film and/or a silicon nitride film formed on a patterned silicon semiconductor wafer; the thickness of the silicon oxide film and/or the silicon nitride film is
5. The etching solution according to claim 4,
the content of the compound shown as the formula A is 4.5 parts by weight;
and/or, the content of the phosphoric acid is 81.2 parts by mass;
and/or the mass ratio of the phosphoric acid to the compound shown in the formula A is 18.0: 1;
and/or the content of the water is 14.3 parts by mass.
6. The etching solution is characterized by comprising the following scheme:
scheme 1:
the etching solution consists of the following components: 1.0-9.5% of a compound shown as a formula A, 76.9-84.1% of phosphoric acid and the balance of water, wherein the percentage is that the mass of each component accounts for the mass of the etching solution,
scheme 2:
the etching solution consists of the following components: 1.0 percent of compound shown as formula A, 84.15 percent of phosphoric acid and 14.85 percent of water, wherein the percentage is that the mass of each component accounts for the mass of the etching solution,
scheme 3:
the etching solution consists of the following components: 4.5 percent of compound shown as formula A, 81.2 percent of phosphoric acid and 14.3 percent of water, wherein the percentage is the percentage of the mass of each component in the etching solution,
scheme 4:
the etching solution consists of the following components: 9.5 percent of compound shown as formula A, 76.9 percent of phosphoric acid and 13.6 percent of water, wherein the percentage is the percentage of the mass of each component in the etching solution,
7. use of an etching solution according to any one of claims 1 to 6 for etching silicon oxide and/or silicon nitride.
8. Use of an etching solution according to claim 7 for etching silicon oxide and/or silicon nitride,
the etching solution is used for etching silicon nitride;
and/or, the silicon oxide and/or the silicon nitride are applied to a semiconductor material;
and/or the silicon oxide and/or the silicon nitride are/is a silicon oxide film and/or a silicon nitride film, and the thickness of the silicon oxide film and/or the silicon nitride film is
And/or the silicon oxide and/or the silicon nitride are of a laminated structure, and the number of layers of the laminated structure is 20-200;
and/or the temperature of the etching is 150-165 ℃;
and/or the etching time is 500-6500 seconds;
and/or, the etching comprises the following steps: and etching the silicon oxide and/or the silicon nitride at the temperature of 150-165 ℃ for 500-6500 seconds, taking out the silicon oxide and/or the silicon nitride, cleaning, drying, and observing the etching condition of the silicon oxide and/or the silicon nitride by using a TEM section.
9. A method for preparing the etching solution as claimed in any one of claims 1 to 6, comprising the steps of: and mixing the compound shown as the formula A, phosphoric acid and water.
10. The application of the compound shown as the formula A in serving as an etching solution additive;
11. the use of a compound of formula A as claimed in claim 10 as an additive in etching solutions,
the content of the compound shown as the formula A is 1.0-9.5%, wherein the percentage is the percentage of the mass of the compound shown as the formula A in the etching solution;
and/or the etching solution further comprises phosphoric acid, wherein the content of the phosphoric acid is 76.9% -84.1%, and the percentage is the percentage of the mass of the phosphoric acid in the mass of the etching solution;
and/or the etching solution further comprises water, wherein the content of the water is 13.6-14.8%, and the percentage is the percentage of the mass of the water in the etching solution;
and/or the etching solution is used for etching silicon oxide and/or silicon nitride;
and/or the etching solution is defined as in any one of claims 1 to 6.
12. The use of a compound of formula A as claimed in claim 11 as an additive in etching solutions,
the content of the compound shown in the formula A is 4.5%, wherein the percentage is the percentage of the mass of the compound shown in the formula A in the mass of the etching solution;
and/or the etching solution further comprises phosphoric acid, wherein the content of the phosphoric acid is 81.2%, and the percentage is the percentage of the mass of the phosphoric acid in the mass of the etching solution;
and/or the etching solution further comprises water, wherein the content of the water is 14.3%, and the percentage is the mass percentage of the water in the etching solution;
and/or the etching solution is used for etching silicon nitride.
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| CN105384778B (en) * | 2015-10-26 | 2017-11-24 | 苏州科技大学 | The preparation method of fire retardant alkyl-dimethyl epoxide (phosphorus heterocycle methoxyl group) silane compound |
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| KR101953380B1 (en) * | 2018-05-31 | 2019-02-28 | 엘티씨에이엠 주식회사 | A Composition for Wet Etching to Silicon Nitride |
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