CN111836518B - Temperature-equalizing plate and processing method thereof - Google Patents
Temperature-equalizing plate and processing method thereof Download PDFInfo
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- CN111836518B CN111836518B CN202010641489.6A CN202010641489A CN111836518B CN 111836518 B CN111836518 B CN 111836518B CN 202010641489 A CN202010641489 A CN 202010641489A CN 111836518 B CN111836518 B CN 111836518B
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- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K7/00—Constructional details common to different types of electric apparatus
- H05K7/20—Modifications to facilitate cooling, ventilating, or heating
- H05K7/2029—Modifications to facilitate cooling, ventilating, or heating using a liquid coolant with phase change in electronic enclosures
- H05K7/20336—Heat pipes, e.g. wicks or capillary pumps
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Abstract
The invention provides a temperature-equalizing plate and a processing method thereof, wherein the temperature-equalizing plate comprises a hot end close to a heat source and a cold end opposite to the hot end and far away from the heat source, the temperature-equalizing plate comprises a first cover plate and a second cover plate which is arranged opposite to the first cover plate and covers the first cover plate, one side of the first cover plate close to the second cover plate is sunken to be far away from the second cover plate to form a first groove, and the first cover plate and the second cover plate are enclosed to form a closed inner cavity filled with working liquid; the first cover plate comprises a bottom wall opposite to the second cover plate and arranged at intervals, and a side wall which is bent from the periphery of the bottom wall to the second cover plate, extends and is abutted to the second cover plate, the temperature equalizing plate further comprises a capillary structure arranged on the bottom wall, and the thickness of the capillary structure is gradually increased from the hot end to the cold end. By the direction of hot junction to cold junction, capillary structure's thickness increases gradually, and working fluid is changeed from the cold junction flow direction hot junction, makes working fluid from liquid to gaseous state to liquid circulation velocity is faster again, and heat dispersion is more excellent.
Description
[ technical field ] A method for producing a semiconductor device
The invention relates to the technical field of heat conduction, in particular to a temperature-equalizing plate and a processing method thereof.
[ background of the invention ]
In the related art, the electronic devices usually use copper foil or graphite for heat dissipation, but as the functions of some electronic devices become more powerful, the heat dissipation performance of the electronic devices is required to be higher, and the heat dissipation mode of the copper foil or graphite cannot meet the heat dissipation requirement gradually.
In order to solve the above problems, some temperature equalizing plates are used for heat dissipation in the related art, but the temperature equalizing plates in the related art have certain disadvantages in structure, so that the heat dissipation effect cannot be expected.
Therefore, there is a need to provide a new type of vapor chamber to solve the above problems.
[ summary of the invention ]
The invention aims to provide a temperature-equalizing plate and a processing method thereof, and the temperature-equalizing plate has better heat conduction effect.
The technical scheme of the invention is as follows: one embodiment of the invention provides a temperature-uniforming plate, which comprises a hot end close to a heat source and a cold end opposite to the hot end and far away from the heat source, wherein the temperature-uniforming plate comprises a first cover plate and a second cover plate which is arranged opposite to the first cover plate and covers the first cover plate, one side of the first cover plate close to the second cover plate is recessed far away from the second cover plate to form a groove, and the first cover plate and the second cover plate are enclosed to form a closed inner cavity filled with working liquid; the first cover plate comprises a bottom wall opposite to the second cover plate and arranged at intervals, and a side wall which is bent and extended from the periphery of the bottom wall to the second cover plate and is abutted against the second cover plate; the side wall is enclosed to form the groove, the temperature-uniforming plate further comprises a capillary structure arranged on the bottom wall, and the thickness of the capillary structure is gradually increased from the hot end to the cold end.
As an embodiment of the present invention, the thickness of the capillary structure gradually increases in a step shape from the hot end to the cold end.
As an embodiment of the present invention, the thickness of the capillary structure gradually increases in a linear relationship from the hot end to the cold end.
As an embodiment of the present invention, the capillary structure is formed on a side of the bottom wall close to the second cover plate by a sintering process or an etching process or an electrodeposition process.
As an embodiment of the present invention, a plurality of support pillars are disposed on the first cover plate, and the support pillars extend from the bottom wall to a position close to the second cover plate and abut against the second cover plate.
As an embodiment of the present invention, a plurality of the support pillars are arranged in an array on the bottom wall, and are disposed at intervals adjacent to each other.
As an embodiment of the present invention, the groove and the supporting pillar are formed on the first cover plate by etching or punching.
As an embodiment of the invention, the first cover plate and/or the second cover plate are made of stainless steel and/or copper, respectively.
Another embodiment of the present invention provides a method for processing a vapor chamber, the vapor chamber including a hot end close to a heat source and a cold end opposite to and far from the hot end, the method comprising the steps of:
step S1: providing a first cover plate, and forming a groove and a plurality of support pillars on the first cover plate through etching or punching, wherein the first cover plate comprises a bottom wall and a side wall bent and extended from the periphery of the bottom wall, the side wall surrounds the groove, and the plurality of support pillars are formed on the bottom wall;
step S2: dividing the bottom wall into N sub-regions from N1, N2, N3 to Nn in the direction from the hot end to the cold end, wherein the N sub-regions are sequentially distributed in the direction from the hot end to the cold end; and depositing a capillary structure with the thickness of S1 on the bottom wall;
step S3: shielding the N1 subregion, and depositing to form a capillary structure with the thickness of S2 in the subregions N2, N3 to Nn of the bottom wall;
step S4: shielding the sub-regions N1 and N2, and depositing a capillary structure with the thickness of S3 on the sub-regions N3 to Nn of the bottom wall;
step S5: shielding the sub-regions N1, N2 to Nn-1, and depositing a capillary structure with Sn thickness on the sub-region Nn of the bottom wall;
step S6: and providing a second cover plate, and covering the first cover plate with the second cover plate to form a closed inner cavity filled with working liquid.
Another embodiment of the present invention provides a method for processing a vapor chamber, the vapor chamber including a hot end close to a heat source and a cold end opposite to and far from the hot end, the method including the steps of:
step S1: providing a first cover plate, and forming a groove and a plurality of support pillars on the first cover plate through etching or punching, wherein the first cover plate comprises a bottom wall and a side wall bent and extended from the periphery of the bottom wall, the side wall surrounds the groove, and the plurality of support pillars are formed on the bottom wall;
step S2: dividing the bottom wall into N sub-regions from N1, N2, N3 to Nn in the direction from the hot end to the cold end, wherein the N sub-regions are sequentially distributed in the direction from the hot end to the cold end; shielding the sub-regions N2, N3 to Nn, and depositing a capillary structure with the thickness of S1 on the sub-region N1 of the bottom wall;
step S3: shielding the sub-regions N1 and N3, N4 to Nn, and depositing a capillary structure with the thickness of S2 on the sub-region N2 of the bottom wall;
step S4: shielding the sub-region N1 to Nn-1, and depositing a capillary structure with Sn thickness on the sub-region Nn of the bottom wall;
step S5: providing a second cover plate, and covering the first cover plate with the second cover plate to form a closed inner cavity filled with working liquid;
wherein Sn > Sn-1> … > S2> S1.
The invention has the beneficial effects that:
the working liquid at the hot end of the temperature equalizing plate is vaporized to absorb heat and take away the heat of the heat source, the vaporized working liquid flows from the hot end to the cold end through the closed inner cavity and is liquefied at the cold end to release heat, and then the liquefied working liquid flows from the cold end to the hot end again through the capillary structure, so that the reciprocating circulation is realized, and the heat dissipation effect is realized. Because capillary structure sets up on the diapire, and by the hot junction to the cold junction in the direction, capillary structure's thickness increases gradually to the working fluid after the condensation is changeed from cold junction flow direction hot junction, thereby makes working fluid from liquid to gaseous state again to liquid circulation velocity faster, and then makes the heat dispersion of the samming board in this embodiment more excellent.
[ description of the drawings ]
FIG. 1 is a schematic view of an overall structure of a vapor chamber according to an embodiment of the present invention;
FIG. 2 is an exploded view of FIG. 1;
FIG. 3 is a cross-sectional view taken along A-A of FIG. 1;
FIG. 4 is an enlarged view of a portion of FIG. 3 at B;
FIG. 5 is an enlarged view of a portion of FIG. 3 at C;
FIG. 6 is a first embodiment of a method for manufacturing the vapor chamber of FIG. 1;
FIG. 7 is a second embodiment of a method for manufacturing the vapor chamber of FIG. 1;
[ detailed description ] embodiments
To further illustrate the various embodiments, the invention provides the accompanying drawings. The accompanying drawings, which are incorporated in and constitute a part of this disclosure, illustrate embodiments of the invention and, together with the description, serve to explain the principles of the embodiments. Those skilled in the art will appreciate still other possible embodiments and advantages of the present invention with reference to these figures. Elements in the figures are not drawn to scale and like reference numerals are generally used to indicate like elements.
The invention is further described with reference to the following figures and embodiments.
Referring to fig. 1 to 6, an embodiment of the present invention provides a temperature-uniforming plate, where the temperature-uniforming plate in this embodiment has a closed inner cavity 10, the closed inner cavity 10 is filled with a working liquid, the working liquid is a liquid phase-change material, such as liquid water, ethanol, acetone, and the like, and through a conversion process from liquid to gas and then to liquid of the working liquid, heat is rapidly dissipated, and a heat dissipation effect is better.
Preferably, the closed inner cavity 10 is in a vacuum state, so that the conversion process of the working liquid from liquid to gas to liquid is not affected by impurities, and the heat dissipation effect is better.
Referring to fig. 1 to 4, the temperature equalization plate in the present embodiment includes a first cover plate 100 and a second cover plate 200 disposed opposite to each other, and a capillary structure 300 disposed between the first cover plate 100 and the second cover plate 200, specifically, one side of the first cover plate 100 close to the second cover plate 200 is recessed away from the second cover plate 200 to form a groove 101, and the first cover plate 100 and the second cover plate 200 enclose to form a closed inner cavity 10 filled with a working fluid; the first cover plate 100 includes a bottom wall 110 opposite to and spaced from the second cover plate 200, and a sidewall 120 bent and extended from the periphery of the bottom wall 110 to the second cover plate 200 and abutted against the second cover plate 200; the side wall 120 encloses to form the groove 101, the capillary structure 300 is arranged on the bottom 5 wall 110, the capillary structure 300 is used for absorbing the working liquid after being liquefied when encountering cold, specifically, the capillary structure 300 can be used as a liquid channel to allow the liquid working liquid to flow, the second cover plate 200 is arranged on the first cover plate 100 and hermetically covers the groove 101, the second cover plate 200, the side wall 120 and the bottom wall 110 enclose together to form a steam channel 102 through which the steam working liquid can flow.
In other embodiments, the side of the second cover plate 200 facing the first cover plate 100 is also grooved corresponding to the grooves 101 to increase the volume of the steam channel. Of course, it is preferable that the second cover plate 200 is a flat plate without a groove, so that the manufacturing difficulty is reduced.
Referring to fig. 1-4, according to the installation and use scenarios, the temperature equalization plate in the present embodiment generally includes a hot end 500 close to the heat source and a cold end 600 opposite to the hot end 500 and far from the hot end 500, and the working principle of the temperature equalization plate in the present embodiment is as follows: the working liquid filled in the vapor channel 102 in the hot end 500 evaporates to absorb heat and takes away heat of a heat source, the vaporized working liquid flows from the hot end 500 to the cold end 600 through the vapor channel 102 and is liquefied at the cold end 600 to release heat, and then the liquefied working liquid flows from the cold end 600 to the hot end 500 from the capillary structure 300 again, so that the circulation is repeated, and the heat dissipation effect is realized.
It should be noted that, taking the example that the temperature-uniforming plate has a rectangular structure, the temperature-uniforming plate has two opposite long shaft portions and a short shaft portion for connecting the two long shaft portions, and the hot end 500 and the cold end 600 are respectively ends close to the two short shaft portions.
Referring to fig. 1 and fig. 2, in the present embodiment, since the capillary structure 300 is disposed on the bottom wall 110, and the thickness of the capillary structure 300 gradually increases in the direction from the hot end 500 to the cold end 600, and the capillary structure 300 of the cold end 600 is thicker, the working liquid after being liquefied by cooling is more likely to flow from the cold end 600 to the hot end 500, so that the circulation speed of the working liquid from the liquid state to the gaseous state to the liquid state is faster, and the heat dissipation performance of the temperature equalization plate in the present embodiment is better.
Referring to fig. 2 and fig. 3, in the present embodiment, the thickness of the capillary structure 300 gradually increases in a step shape from the hot end 500 to the cold end 600. The thickness of the capillary structure 300 increases gradually from the hot end 500 to the cold end 600, and the capillary structure 300 of the cold end 600 is thicker.
In other embodiments, the thickness of the capillary structure 300 increases in a linear relationship from the hot end 500 to the cold end 600. The thickness of the capillary 6 structure 300 increases gradually and the thickness of the capillary structure 300 at the cold end 600 is thicker as it goes from the hot end 500 to the cold end 600.
The capillary structure 300 in this embodiment is formed on the side of the bottom wall 110 close to the second cover plate 200 by a sintering (mesh) process or an etching process or an electrodeposition process.
The capillary structure 300 in this embodiment may be a woven wire mesh or a synthetic fiber, and may also be metal powder particles.
Referring to fig. 2 and fig. 4, in the present embodiment, a plurality of supporting pillars 400 are disposed on the first cover plate 100, and the supporting pillars 400 extend from the bottom wall 110 to a position close to the second cover plate 200 and abut against the second cover plate 200. The plurality of support columns 400 are all accommodated in the closed inner cavity, and the strength of the temperature equalizing plate in the embodiment can be ensured through the plurality of support columns 400.
The grooves 101 and the supporting pillars 400 in this embodiment are formed on the first cover plate 100 by etching or punching.
In other embodiments, a plurality of support posts 400 are adhered to the bottom surface of the groove 101, thereby saving a portion of the material.
The support posts 400 in this embodiment are arranged in an array and the adjacent support posts 400 are spaced apart. Of course, the support posts 400 may be irregularly arranged.
The first cover plate 100 and/or the second cover plate 200 in this embodiment are stainless steel plates and/or copper plates, respectively. But may be made of other metals with better heat conductivity. The shape and size of the first cover plate 100 and the second cover plate 200 in this embodiment are not limited, and may be rectangular, V-shaped, or other shapes.
Referring to fig. 5, in an embodiment in which the thickness of the capillary structure 300 gradually increases in a step shape, the present invention further provides a method for processing a vapor chamber, the vapor chamber includes a hot end 500 close to a heat source and a cold end 600 opposite to the hot end 500 and far from the hot end 500, including the following steps:
step S1: providing a first cover plate 100, forming a groove 101 and a plurality of support pillars 400 on the first cover plate 100 by etching or punching, wherein the first cover plate 100 comprises a bottom wall 110 and a side wall 120 bent and extended from the periphery of the bottom wall 110, the side wall 120 encloses the groove 101, and the plurality of support pillars 400 are formed on the bottom wall 110;
step S2: in the direction from the hot end 500 towards the cold end 600, the bottom wall is divided into N sub-regions, N1, N2, N3 to Nn, and the N sub-regions are sequentially distributed in the direction from the hot end 500 towards the cold end 6007; and depositing the capillary structure 300 with the thickness of S1 on the bottom wall 110;
step S3: shielding the sub-region N1 area, and depositing to form a capillary structure 300 with the thickness of S2 on the sub-regions N2, N3 to Nn of the bottom wall 110;
step S4: shielding the sub-regions N1 and N2, and depositing the sub-regions N3 to Nn on the bottom wall 110 to form a capillary structure 300 with the thickness of S3;
step S5: the areas of the sub-regions N1, N2 to Nn-1 are masked, and the Sn thick capillary structure 300 is deposited on the sub-region Nn of the bottom wall 110.
Step S6: and providing a second cover plate 200, and covering the first cover plate 100 with the second cover plate 200 to form a closed inner cavity filled with working liquid.
It should be noted that the thickness of the capillary structure 300 of the sub-region N1 after deposition is S1, the thickness of the capillary structure 300 of the sub-region N2 is S1+ S2, the thickness of the capillary structure 300 of the sub-region N3 is S1+ S2+ S3, and so on, the thickness of the capillary structure 300 of the sub-region Nn is S1+ S2+ S3+ … + Sn.
Preferably, the bottom wall 110 is divided into 4 sections.
The temperature-uniforming plate formed by the method of the embodiment has the advantages that the capillary structure 300 is arranged on the bottom wall 110, and in the direction from the hot end 500 to the cold end 600, the thickness of the capillary structure 300 is gradually increased, the capillary structure 300 of the cold end 600 is thicker, so that the working liquid can easily flow to the hot end 500 from the cold end 600, the circulation speed of the working liquid from the liquid state to the gaseous state to the liquid state is higher, and the heat dissipation performance of the temperature-uniforming plate in the embodiment is better.
Referring to fig. 6, in an embodiment in which the thickness of the capillary structure 300 gradually increases in a step shape, the present invention further provides another method for processing a vapor chamber, the vapor chamber includes a hot end 500 close to a heat source and a cold end 600 opposite to the hot end 500 and far from the hot end 500, and the method includes the following steps:
step S1: providing a first cover plate 100, forming a groove 101 and a plurality of support pillars 400 on the first cover plate 100 by etching or punching, wherein the first cover plate 100 comprises a bottom wall 110 and a side wall 120 bent and extended from the periphery of the bottom wall 110, the side wall 120 encloses the groove 101, and the plurality of support pillars 400 are formed on the bottom wall 110;
step S2: in the direction from the hot end 500 towards the cold end 600, the bottom wall 110 is divided into N sub-regions, N1, N2, N3 to Nn, and the N sub-regions are sequentially distributed in the direction from the hot end 500 towards the cold end 600; shielding the sub-regions N2, N3 to Nn, and depositing the capillary structure 300 with the thickness of S1 on the sub-region N1 of the bottom wall 110;
step S3: shielding the sub-regions N1 and N3, N4 to Nn, and depositing a capillary structure 300 with the thickness of S2 on the sub-region N2 of the bottom wall 110;
step S4: shielding sub-regions N1 to Nn-1, depositing a capillary structure 300 of Sn thickness on said sub-regions Nn of said bottom wall 110;
step S5: and providing a second cover plate 200, and covering the first cover plate 100 with the second cover plate 200 to form a closed inner cavity filled with working liquid.
Wherein Sn > Sn-1> … > S2> S1, thereby providing a greater thickness of the capillary structure 300 closer to the cold end 600.
By the method in this embodiment, only one area of the bottom surface needs to be deposited at a time, and thus the capillary structure 300 can be formed on the bottom wall 110 quickly and at a higher production speed.
The invention has the beneficial effects that: the working liquid at the hot end of the temperature equalizing plate is vaporized to absorb heat and take away the heat of the heat source, the vaporized working liquid flows from the hot end to the cold end through the closed inner cavity and is liquefied at the cold end to release heat, and then the liquefied working liquid flows from the cold end to the hot end again through the capillary structure, so that the reciprocating circulation is realized, and the heat dissipation effect is realized. Because capillary structure sets up on the diapire, and by the hot junction to the cold junction in the direction, capillary structure's thickness increases gradually to the working fluid after the condensation is changeed from cold junction flow direction hot junction, thereby makes working fluid from liquid to gaseous state again to liquid circulation velocity faster, and then makes the heat dispersion of the samming board in this embodiment more excellent.
While the foregoing is directed to embodiments of the present invention, it will be understood by those skilled in the art that various changes may be made without departing from the spirit and scope of the invention.
Claims (2)
1. A processing method of a vapor chamber comprises a hot end close to a heat source and a cold end opposite to the hot end and far away from the hot end, and is characterized in that: the method comprises the following steps:
step S1: providing a first cover plate, and forming a groove and a plurality of support pillars on the first cover plate through etching or punching, wherein the first cover plate comprises a bottom wall and a side wall bent and extended from the periphery of the bottom wall, the side wall surrounds the groove, and the plurality of support pillars are formed on the bottom wall;
step S2: dividing the bottom wall into N sub-regions from N1, N2, N3 to Nn in the direction from the hot end to the cold end, wherein the N sub-regions are sequentially distributed in the direction from the hot end to the cold end; and depositing a capillary structure with the thickness of S1 on the bottom wall;
step S3: shielding the N1 subregion, and depositing to form a capillary structure with the thickness of S2 in the subregions N2, N3 to Nn of the bottom wall;
step S4: shielding the sub-regions N1 and N2, and depositing a capillary structure with the thickness of S3 on the sub-regions N3 to Nn of the bottom wall;
step S5: shielding the sub-regions N1, N2 to Nn-1, and depositing a capillary structure with Sn thickness on the sub-region Nn of the bottom wall; the thickness of the capillary structure is gradually increased from the hot end to the cold end;
step S6: and providing a second cover plate, and covering the first cover plate with the second cover plate to form a closed inner cavity filled with working liquid.
2. A processing method of a vapor chamber comprises a hot end close to a heat source and a cold end opposite to the hot end and far away from the hot end, and is characterized in that: the method comprises the following steps:
step S1: providing a first cover plate, and forming a groove and a plurality of support pillars on the first cover plate through etching or punching, wherein the first cover plate comprises a bottom wall and a side wall bent and extended from the periphery of the bottom wall, the side wall surrounds the groove, and the plurality of support pillars are formed on the bottom wall;
step S2: dividing the bottom wall into N sub-regions from N1, N2, N3 to Nn in the direction from the hot end to the cold end, wherein the N sub-regions are sequentially distributed in the direction from the hot end to the cold end; shielding the sub-regions N2, N3 to Nn, and depositing a capillary structure with the thickness of S1 on the sub-region N1 of the bottom wall;
step S3: shielding the sub-regions N1 and N3, N4 to Nn, and depositing a capillary structure with the thickness of S2 on the sub-region N2 of the bottom wall;
step S4: shielding the sub-region N1 to Nn-1, and depositing a capillary structure with Sn thickness on the sub-region Nn of the bottom wall;
step S5: providing a second cover plate, and covering the first cover plate with the second cover plate to form a closed inner cavity filled with working liquid;
wherein Sn > Sn-1> … > S2> S1.
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202010641489.6A CN111836518B (en) | 2020-07-06 | 2020-07-06 | Temperature-equalizing plate and processing method thereof |
| PCT/CN2020/104774 WO2022007032A1 (en) | 2020-07-06 | 2020-07-27 | Vapor chamber and machining method for vapor chamber |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
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| CN202010641489.6A CN111836518B (en) | 2020-07-06 | 2020-07-06 | Temperature-equalizing plate and processing method thereof |
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| CN111836518A CN111836518A (en) | 2020-10-27 |
| CN111836518B true CN111836518B (en) | 2022-04-26 |
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| CN112458503B (en) * | 2020-11-19 | 2022-03-01 | 瑞声科技（南京）有限公司 | Preparation method of upper cover plate of vapor chamber and vapor chamber |
| CN112566459B (en) * | 2020-11-30 | 2022-01-11 | 瑞声科技（南京）有限公司 | Manufacturing method of heat dissipation device and heat dissipation device |
| CN112589387B (en) * | 2020-11-30 | 2022-07-01 | 瑞声科技（南京）有限公司 | Temperature-uniforming plate processing method and temperature-uniforming plate |
| CN112760630A (en) * | 2020-12-25 | 2021-05-07 | 瑞声科技（南京）有限公司 | Manufacturing method of heat dissipation device and heat dissipation device |
| CN114083841A (en) * | 2021-12-16 | 2022-02-25 | 成都四威高科技产业园有限公司 | High-thermal-conductivity graphite film temperature-equalizing plate and preparation method thereof |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| TW530935U (en) * | 2002-07-26 | 2003-05-01 | Tai Sol Electronics Co Ltd | Heat dissipation apparatus for lower-connect type integrated circuit |
| CN201207780Y (en) * | 2008-05-26 | 2009-03-11 | 索士亚科技股份有限公司 | Sectional temperature equalization board |
| TW201007109A (en) * | 2008-08-15 | 2010-02-16 | Foxconn Tech Co Ltd | Method of manufacturing a vapor chamber |
| CN101650142A (en) * | 2008-08-15 | 2010-02-17 | 富准精密工业(深圳)有限公司 | Manufacturing method of capillary structure of flat-sheet heat pipe |
| CN201335633Y (en) * | 2008-12-26 | 2009-10-28 | 索士亚科技股份有限公司 | Temperature equalization plate with different thicknesses of capillarity tissues and mould for temperature equalization plate |
| CN102168931B (en) * | 2010-02-26 | 2012-09-19 | 昆山德泰新金属粉末有限公司 | Flat type radiating pipe and manufacturing method thereof |
| US9549486B2 (en) * | 2013-07-24 | 2017-01-17 | Asia Vital Components Co., Ltd. | Raised bodied vapor chamber structure |
| CN106996710B (en) * | 2016-01-25 | 2018-11-23 | 昆山巨仲电子有限公司 | Thin type equalizing plate structure |
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| CN111836518A (en) | 2020-10-27 |
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