CN111823131A - Bonding structure of retaining ring for chemical mechanical polishing of semiconductor - Google Patents
Bonding structure of retaining ring for chemical mechanical polishing of semiconductor Download PDFInfo
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- CN111823131A CN111823131A CN202010767784.6A CN202010767784A CN111823131A CN 111823131 A CN111823131 A CN 111823131A CN 202010767784 A CN202010767784 A CN 202010767784A CN 111823131 A CN111823131 A CN 111823131A
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- ring body
- bonding
- ring
- mechanical polishing
- bonding surface
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/27—Work carriers
- B24B37/30—Work carriers for single side lapping of plane surfaces
- B24B37/32—Retaining rings
Abstract
The invention provides a bonding structure of a retaining ring for semiconductor chemical mechanical polishing, which comprises a first ring body and a second ring body which are bonded with each other, wherein the cross section of a bonding surface of the first ring body is L-shaped, grooves are arranged on the bonding surface of the first ring body at intervals, and the bonding surface of the second ring body is matched with the bonding surface of the first ring body. The bonding structure can effectively enhance the bonding strength and prevent the product from degumming in the use process.
Description
Technical Field
The invention belongs to the field of semiconductor processing machinery, relates to a retaining ring for semiconductor chemical mechanical polishing, and particularly relates to a bonding structure of the retaining ring for semiconductor chemical mechanical polishing.
Background
In chemical mechanical polishing (cmp), wafer fabrication, with the upgrading of process technology and the shrinking of wire and gate dimensions, the requirement of Lithography (lithograph) technology on the flatness (Non-uniformity) of the wafer surface is higher and higher, and IBM corporation developed the introduction of CMOS products in 1985 and successfully applied to the 64MB DRAM production in 1990. Since 1995, CMP technology has rapidly developed and has been used in the semiconductor industry in large numbers. Chemical mechanical polishing (cmp) is also called chemical mechanical polishing (cmp), and the principle of cmp is a processing technology combining chemical corrosion and mechanical removal, and the only technology in mechanical processing can achieve global surface planarization.
The chemical mechanical polishing technology combines the advantages of chemical polishing and mechanical polishing. The method has the advantages that the method is simple in chemical grinding, high in surface precision, low in damage, good in integrity, not easy to cause surface/sub-surface damage, but low in grinding speed, low in material removal efficiency, incapable of correcting surface profile precision and poor in grinding consistency; the pure mechanical grinding has good grinding consistency, high surface flatness and high grinding efficiency, but surface layer/sub-surface layer damage is easy to occur, and the surface roughness value is lower. The chemical mechanical grinding absorbs the respective advantages of the two, can obtain a perfect surface while ensuring the material removal efficiency, obtains the flatness which is 1 to 2 orders of magnitude higher than that of the two grinding methods, and can realize the surface roughness from nano level to atomic level.
CN 101320694 discloses a retaining ring and a chemical mechanical polishing apparatus, the retaining ring includes a ring, a plurality of grooves and a plurality of openings. The ring has a first major surface, a second major surface, an inner edge and an outer edge. The plurality of grooves are disposed in the first main surface. Each trench extends through the inner edge. Each opening is disposed in each trench. The device comprises a circular ring, a first clamping piece and a second clamping piece, wherein the circular ring is provided with an inner edge and an outer edge, and the inner edge and the outer edge are concentric; a plurality of openings disposed above the ring, wherein each opening extends through the retaining ring; and a plurality of trenches, wherein each trench surrounds each opening and extends to the inner edge.
CN 205734410U discloses three groove structures of a retainer ring assembled to a polishing head of a chemical mechanical polishing apparatus for integrated circuit chip production. By changing the structure of the grooves, the total area of the grooves is increased, and the number of the grooves is increased, so that more abrasive can enter the surface of the wafer, particularly the center of the wafer. This may improve thickness uniformity within the wafer, particularly with highly viscous abrasives; in addition, as the abrasive can enter the surface of the wafer more easily, the flow rate of the abrasive supply can be reduced, and the aim of reducing the cost is fulfilled.
CN 108614937 a discloses a method for obtaining optimal process parameters of a retaining ring, comprising: establishing a finite element analysis model of a chemical mechanical polishing system, wherein the finite element analysis model comprises a polishing pad, a wafer, a retaining ring arranged on the periphery of the wafer, and a clamp for pressing the wafer and the retaining ring on the polishing pad at a certain pressure; determining boundary conditions of the analytical model, and substituting material parameters of the polishing pad, the wafer, the holder and the retaining ring into the analytical model; respectively substituting the process parameters of different groups of retaining rings into the analysis model, and calculating the surface equivalent stress distribution result of the wafer under the process parameters of each group of retaining rings; comparing the surface equivalent stress distribution results of all groups to obtain a group of process parameters which enable the stress peak value of the wafer edge to be minimum, so that the process parameters of the retaining ring which need to be determined in actual production can be guided, the stress concentration phenomenon of the wafer edge can be avoided, excessive abrasion of the wafer edge can be reduced to the maximum extent, and the polishing precision and the utilization rate of the wafer can be improved.
The main body of the retaining ring for semiconductor chemical mechanical polishing is composed of two ring bodies which are fixed together in a glue bonding mode, the bonding strength is one of key parameters of the retaining ring for mechanical polishing, and a reasonable bonding structure is an effective means for ensuring the bonding strength.
Disclosure of Invention
Aiming at the technical problems in the prior art, the invention provides the bonding structure of the retaining ring for the chemical mechanical polishing of the semiconductor, which can effectively enhance the bonding strength and prevent the product from degumming in the using process.
In order to achieve the purpose, the invention adopts the following technical scheme:
the invention provides a bonding structure of a retaining ring for semiconductor chemical mechanical polishing, which comprises a first ring body and a second ring body which are bonded with each other, wherein the cross section of a bonding surface of the first ring body is L-shaped, at least two grooves are arranged on the bonding surface of the first ring body at intervals, and the bonding surface of the second ring body is matched with the bonding surface of the first ring body.
In the invention, the mutual matching of the bonding surface of the second ring body and the bonding surface of the first ring body means that the second ring body can be embedded into the L-shaped bonding surface of the first ring body and is not embedded in a gap.
As a preferable technical scheme of the invention, the first ring body is a PPS ring body.
In a preferred embodiment of the present invention, the second ring is a SUS ring.
In the present invention, the materials of the first ring body and the second ring body are limited for the mechanical polishing in the semiconductor field, but the bonding structure provided by the present invention is also applicable to other application fields of the mechanical polishing, and therefore, the structures of the first ring body and the second ring body are not limited to the above materials.
In a preferred embodiment of the present invention, the interval between the radially adjacent grooves is 2 to 5mm, such as 2.5mm, 3mm, 3.5mm, 4mm or 4.5mm, but not limited to the values listed, and other values not listed in the range of the values are also applicable.
As the preferable technical scheme of the invention, the groove in the circumferential direction is of a full-circle groove structure.
As a preferable technical scheme of the invention, the groove is a dovetail groove.
As the preferable technical scheme of the invention, the groove is filled with glue.
In the invention, the structure of the groove is limited to be a dovetail groove, namely the dovetail groove structure can be suitable for glue of most materials, and for glue of other materials, the shape of the groove can be adjusted according to the viscosity of the glue, and the dovetail groove is not limited to be a dovetail groove.
Compared with the prior art, the invention at least has the following beneficial effects:
the invention provides an adhesive structure of a retaining ring for semiconductor chemical mechanical polishing, which can effectively enhance the adhesive strength and prevent the product from degumming in the using process.
Drawings
FIG. 1 is a schematic structural view of a bonded structure provided in example 1 of the present invention before bonding;
fig. 2 is a schematic structural view of the bonded structure provided in embodiment 1 of the present invention after bonding.
The present invention is described in further detail below. The following examples are merely illustrative of the present invention and do not represent or limit the scope of the claims, which are defined by the claims.
Detailed Description
The technical scheme of the invention is further explained by the specific implementation mode in combination with the attached drawings.
To better illustrate the invention and to facilitate the understanding of the technical solutions thereof, typical but non-limiting examples of the invention are as follows:
example 1
The embodiment provides a bonding structure of a retaining ring for semiconductor chemical mechanical polishing, the structure of which is shown in fig. 1, the bonding structure comprises a first ring body and a second ring body which are bonded with each other, the cross section of the bonding surface of the first ring body is L-shaped, grooves are arranged on the bonding surface of the first ring body at intervals, and the bonding surface of the second ring body is matched with the bonding surface of the first ring body.
The first ring body is a PPS ring body, and the second ring body is a SUS ring body.
The groove is a dovetail groove, and glue is filled in the groove.
The interval of the radially adjacent grooves on the first ring body is 3mm, and the grooves in the circumferential direction are of a whole-circle groove structure.
The retaining ring has a radius of 173.95 mm.
Example 2
The embodiment provides a bonding structure of a retaining ring for semiconductor chemical mechanical polishing, the structure of which is shown in fig. 1, the bonding structure comprises a first ring body and a second ring body which are bonded with each other, the cross section of the bonding surface of the first ring body is L-shaped, grooves are arranged on the bonding surface of the first ring body at intervals, and the bonding surface of the second ring body is matched with the bonding surface of the first ring body.
The first ring body is a PPS ring body, and the second ring body is a SUS ring body.
The groove is a dovetail groove, and glue is filled in the groove.
The interval of the radially adjacent grooves on the first ring body is 3.1mm, and the grooves in the circumferential direction are of a whole-circle groove structure.
The retaining ring has a radius of 174.26 mm.
Example 3
The embodiment provides a bonding structure of a retaining ring for semiconductor chemical mechanical polishing, the structure of which is shown in fig. 1, the bonding structure comprises a first ring body and a second ring body which are bonded with each other, the cross section of the bonding surface of the first ring body is L-shaped, grooves are arranged on the bonding surface of the first ring body at intervals, and the bonding surface of the second ring body is matched with the bonding surface of the first ring body.
The first ring body is a PPS ring body, and the second ring body is a SUS ring body.
The groove is a dovetail groove, and glue is filled in the groove.
The interval of the radially adjacent grooves on the first ring body is 2.9mm, and the grooves in the circumferential direction are of a whole-circle groove structure.
The retaining ring has a radius of 173.71 mm.
Example 4
The embodiment provides a bonding structure of a retaining ring for semiconductor chemical mechanical polishing, the structure of which is shown in fig. 1, the bonding structure comprises a first ring body and a second ring body which are bonded with each other, the cross section of the bonding surface of the first ring body is L-shaped, grooves are arranged on the bonding surface of the first ring body at intervals, and the bonding surface of the second ring body is matched with the bonding surface of the first ring body.
The first ring body is a PPS ring body, and the second ring body is a SUS ring body.
The groove is a dovetail groove, and glue is filled in the groove.
The interval of the radially adjacent grooves on the first ring body is 3mm, and the grooves in the circumferential direction are of a whole-circle groove structure.
The retaining ring has a radius of 173.06 mm.
Comparative example 1
In this comparative example, the bonding surface of the first ring body is flat and is not provided with a groove, and the second ring body is flat, and the other conditions are the same as those in example 1.
Comparative example 2
In this comparative example, the bonding surface of the first ring body is a flat surface type, and the second ring body is a flat surface type, and the other conditions are the same as those in example 1.
Comparative example 3
The bonding surface of the first ring body of this comparative example was not provided with grooves, and the other conditions were the same as in example 1.
The adhesive strengths of examples 1 to 4 and comparative examples 1 to 3 were measured, and the results are shown in table 1.
The test method of the bonding strength comprises the following steps: processing a threaded hole on one side of the SUS, putting in a corresponding screw, gradually increasing the torsion by using a torque wrench to test until the SUS and the PPS are locally separated, and recording the torsion to compare.
TABLE 1
As can be seen from the test results in table 1, the adhesive strength of the adhesive structure of the retainer ring for semiconductor chemical mechanical polishing provided in examples 1 to 4 of the present application was 2.2 to 2.4N · m under the test conditions provided by the present invention. Compared with the embodiment, the bonding surface of the first ring body is a plane type and is not provided with a groove, the second ring body is a plane type, and the bonding strength is only 1.0 N.m; comparative example 2 the bonding surface of the first ring body is a flat surface type, and the second ring body is a flat surface type, and the bonding strength thereof is only 1.6N · m; comparative example 3 the bonding surface of the first ring body was not provided with grooves, and the bonding strength was only 1.4N · m.
The applicant declares that the present invention illustrates the detailed structural features of the present invention through the above embodiments, but the present invention is not limited to the above detailed structural features, that is, it does not mean that the present invention must be implemented depending on the above detailed structural features. It should be understood by those skilled in the art that any modifications of the present invention, equivalent substitutions of selected components of the present invention, additions of auxiliary components, selection of specific modes, etc., are within the scope and disclosure of the present invention.
The preferred embodiments of the present invention have been described in detail, however, the present invention is not limited to the specific details of the above embodiments, and various simple modifications may be made to the technical solution of the present invention within the technical idea of the present invention, and these simple modifications are within the protective scope of the present invention.
It should be noted that the various technical features described in the above embodiments can be combined in any suitable manner without contradiction, and the invention is not described in any way for the possible combinations in order to avoid unnecessary repetition.
In addition, any combination of the various embodiments of the present invention is also possible, and the same should be considered as the disclosure of the present invention as long as it does not depart from the spirit of the present invention.
Claims (7)
1. The bonding structure of the retaining ring for semiconductor chemical mechanical polishing is characterized by comprising a first ring body and a second ring body which are bonded with each other, wherein the cross section of the bonding surface of the first ring body is L-shaped, at least two grooves are formed in the bonding surface of the first ring body at intervals, and the bonding surface of the second ring body is matched with the bonding surface of the first ring body.
2. The bonded structure of claim 1, wherein the first ring body is a PPS ring body.
3. The bonding structure according to claim 1 or 2, wherein the second ring body is a SUS ring body.
4. A bonding structure according to any one of claims 1 to 3, wherein the interval between the radially adjacent grooves is 2 to 5 mm.
5. A bonded structure according to any of claims 1 to 4, wherein the groove is a full circle groove structure in the circumferential direction.
6. A bonded structure according to any of claims 1 to 5, wherein the grooves are dovetail grooves.
7. A bonding structure according to any of claims 1-6, characterized in that the interior of said groove is filled with glue.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202010767784.6A CN111823131A (en) | 2020-08-03 | 2020-08-03 | Bonding structure of retaining ring for chemical mechanical polishing of semiconductor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202010767784.6A CN111823131A (en) | 2020-08-03 | 2020-08-03 | Bonding structure of retaining ring for chemical mechanical polishing of semiconductor |
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| CN111823131A true CN111823131A (en) | 2020-10-27 |
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| CN202010767784.6A Pending CN111823131A (en) | 2020-08-03 | 2020-08-03 | Bonding structure of retaining ring for chemical mechanical polishing of semiconductor |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20230129597A1 (en) * | 2021-10-27 | 2023-04-27 | Sch Power Tech Co., Ltd. | Retaining Ring for Wafer Polishing |
Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20030070757A1 (en) * | 2001-09-07 | 2003-04-17 | Demeyer Dale E. | Method and apparatus for two-part CMP retaining ring |
| CN2841245Y (en) * | 2003-04-30 | 2006-11-29 | 应用材料公司 | Two-part fixing-ring |
| CN108687657A (en) * | 2017-04-05 | 2018-10-23 | 中芯国际集成电路制造(北京)有限公司 | A kind of chemical-mechanical grinding device |
| CN208759299U (en) * | 2018-07-18 | 2019-04-19 | 尚源股份有限公司 | Align grinding wafer structure |
| CN110666681A (en) * | 2019-10-28 | 2020-01-10 | 吴三西 | Retaining ring of semiconductor CMP (chemical mechanical polishing) equipment and processing method thereof |
| CN111571427A (en) * | 2020-05-22 | 2020-08-25 | 宁波江丰电子材料股份有限公司 | Retaining ring |
-
2020
- 2020-08-03 CN CN202010767784.6A patent/CN111823131A/en active Pending
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20030070757A1 (en) * | 2001-09-07 | 2003-04-17 | Demeyer Dale E. | Method and apparatus for two-part CMP retaining ring |
| CN2841245Y (en) * | 2003-04-30 | 2006-11-29 | 应用材料公司 | Two-part fixing-ring |
| CN108687657A (en) * | 2017-04-05 | 2018-10-23 | 中芯国际集成电路制造(北京)有限公司 | A kind of chemical-mechanical grinding device |
| CN208759299U (en) * | 2018-07-18 | 2019-04-19 | 尚源股份有限公司 | Align grinding wafer structure |
| CN110666681A (en) * | 2019-10-28 | 2020-01-10 | 吴三西 | Retaining ring of semiconductor CMP (chemical mechanical polishing) equipment and processing method thereof |
| CN111571427A (en) * | 2020-05-22 | 2020-08-25 | 宁波江丰电子材料股份有限公司 | Retaining ring |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20230129597A1 (en) * | 2021-10-27 | 2023-04-27 | Sch Power Tech Co., Ltd. | Retaining Ring for Wafer Polishing |
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