CN111816772B - Perovskite solar cell, production method thereof and perovskite cell assembly - Google Patents
Perovskite solar cell, production method thereof and perovskite cell assembly Download PDFInfo
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- CN111816772B CN111816772B CN202010575644.9A CN202010575644A CN111816772B CN 111816772 B CN111816772 B CN 111816772B CN 202010575644 A CN202010575644 A CN 202010575644A CN 111816772 B CN111816772 B CN 111816772B
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- 238000004519 manufacturing process Methods 0.000 title abstract description 13
- 150000002894 organic compounds Chemical class 0.000 claims abstract description 98
- 238000010521 absorption reaction Methods 0.000 claims abstract description 72
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 claims abstract description 45
- 239000000758 substrate Substances 0.000 claims abstract description 32
- 229910052717 sulfur Inorganic materials 0.000 claims abstract description 23
- 125000004437 phosphorous atom Chemical group 0.000 claims abstract description 22
- 125000004433 nitrogen atom Chemical group N* 0.000 claims abstract description 20
- 125000004430 oxygen atom Chemical group O* 0.000 claims abstract description 20
- 125000004434 sulfur atom Chemical group 0.000 claims abstract description 20
- 230000007547 defect Effects 0.000 claims abstract description 18
- 230000005012 migration Effects 0.000 claims abstract description 12
- 238000013508 migration Methods 0.000 claims abstract description 12
- 229910052757 nitrogen Inorganic materials 0.000 claims abstract description 8
- 239000000463 material Substances 0.000 claims description 40
- 238000000034 method Methods 0.000 claims description 30
- 230000002209 hydrophobic effect Effects 0.000 claims description 24
- 125000001153 fluoro group Chemical group F* 0.000 claims description 22
- 230000005525 hole transport Effects 0.000 claims description 17
- 150000002500 ions Chemical class 0.000 claims description 17
- 125000004432 carbon atom Chemical group C* 0.000 claims description 15
- 239000006096 absorbing agent Substances 0.000 claims description 14
- 125000001183 hydrocarbyl group Chemical group 0.000 claims description 14
- -1 amino, mercapto, hydroxyl Chemical group 0.000 claims description 11
- 229910052736 halogen Inorganic materials 0.000 claims description 10
- 150000001768 cations Chemical class 0.000 claims description 8
- 150000001412 amines Chemical class 0.000 claims description 6
- 150000003863 ammonium salts Chemical class 0.000 claims description 6
- 150000002367 halogens Chemical class 0.000 claims description 6
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 5
- 230000005540 biological transmission Effects 0.000 claims description 5
- 229910021419 crystalline silicon Inorganic materials 0.000 claims description 5
- 229910052760 oxygen Inorganic materials 0.000 claims description 5
- 239000001301 oxygen Substances 0.000 claims description 5
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 claims description 4
- 229910052733 gallium Inorganic materials 0.000 claims description 4
- 229940124530 sulfonamide Drugs 0.000 claims description 4
- 150000003456 sulfonamides Chemical class 0.000 claims description 4
- LSNNMFCWUKXFEE-UHFFFAOYSA-M Bisulfite Chemical compound OS([O-])=O LSNNMFCWUKXFEE-UHFFFAOYSA-M 0.000 claims description 3
- 229910019142 PO4 Inorganic materials 0.000 claims description 3
- 239000004642 Polyimide Substances 0.000 claims description 3
- 150000001408 amides Chemical class 0.000 claims description 3
- HVMJUDPAXRRVQO-UHFFFAOYSA-N copper indium Chemical compound [Cu].[In] HVMJUDPAXRRVQO-UHFFFAOYSA-N 0.000 claims description 3
- 150000002148 esters Chemical class 0.000 claims description 3
- 125000003709 fluoroalkyl group Chemical group 0.000 claims description 3
- 125000001207 fluorophenyl group Chemical group 0.000 claims description 3
- 125000002485 formyl group Chemical class [H]C(*)=O 0.000 claims description 3
- 239000011521 glass Substances 0.000 claims description 3
- 229910052745 lead Inorganic materials 0.000 claims description 3
- 239000011159 matrix material Substances 0.000 claims description 3
- 229910021645 metal ion Inorganic materials 0.000 claims description 3
- NBIIXXVUZAFLBC-UHFFFAOYSA-K phosphate Chemical compound [O-]P([O-])([O-])=O NBIIXXVUZAFLBC-UHFFFAOYSA-K 0.000 claims description 3
- 239000010452 phosphate Substances 0.000 claims description 3
- ACVYVLVWPXVTIT-UHFFFAOYSA-M phosphinate Chemical compound [O-][PH2]=O ACVYVLVWPXVTIT-UHFFFAOYSA-M 0.000 claims description 3
- 229920000139 polyethylene terephthalate Polymers 0.000 claims description 3
- 239000005020 polyethylene terephthalate Substances 0.000 claims description 3
- 229920001721 polyimide Polymers 0.000 claims description 3
- USPTVMVRNZEXCP-UHFFFAOYSA-N sulfamoyl fluoride Chemical compound NS(F)(=O)=O USPTVMVRNZEXCP-UHFFFAOYSA-N 0.000 claims description 3
- 229910052718 tin Inorganic materials 0.000 claims description 3
- 125000003178 carboxy group Chemical group [H]OC(*)=O 0.000 claims description 2
- 125000005843 halogen group Chemical group 0.000 claims description 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims 4
- NINIDFKCEFEMDL-UHFFFAOYSA-N Sulfur Chemical compound [S] NINIDFKCEFEMDL-UHFFFAOYSA-N 0.000 claims 2
- 125000004429 atom Chemical group 0.000 claims 2
- 239000011593 sulfur Substances 0.000 claims 2
- 150000003839 salts Chemical class 0.000 claims 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 abstract description 10
- 230000008901 benefit Effects 0.000 abstract description 9
- 229910052698 phosphorus Inorganic materials 0.000 abstract description 6
- KFZMGEQAYNKOFK-UHFFFAOYSA-N Isopropanol Chemical compound CC(C)O KFZMGEQAYNKOFK-UHFFFAOYSA-N 0.000 description 9
- 230000008569 process Effects 0.000 description 8
- IAZDPXIOMUYVGZ-UHFFFAOYSA-N Dimethylsulphoxide Chemical compound CS(C)=O IAZDPXIOMUYVGZ-UHFFFAOYSA-N 0.000 description 7
- 238000004528 spin coating Methods 0.000 description 6
- 230000009286 beneficial effect Effects 0.000 description 5
- BAVYZALUXZFZLV-UHFFFAOYSA-N Methylamine Chemical compound NC BAVYZALUXZFZLV-UHFFFAOYSA-N 0.000 description 4
- ZMXDDKWLCZADIW-UHFFFAOYSA-N N,N-Dimethylformamide Chemical compound CN(C)C=O ZMXDDKWLCZADIW-UHFFFAOYSA-N 0.000 description 4
- MVPPADPHJFYWMZ-UHFFFAOYSA-N chlorobenzene Chemical compound ClC1=CC=CC=C1 MVPPADPHJFYWMZ-UHFFFAOYSA-N 0.000 description 4
- 238000002360 preparation method Methods 0.000 description 4
- XDXWNHPWWKGTKO-UHFFFAOYSA-N 207739-72-8 Chemical compound C1=CC(OC)=CC=C1N(C=1C=C2C3(C4=CC(=CC=C4C2=CC=1)N(C=1C=CC(OC)=CC=1)C=1C=CC(OC)=CC=1)C1=CC(=CC=C1C1=CC=C(C=C13)N(C=1C=CC(OC)=CC=1)C=1C=CC(OC)=CC=1)N(C=1C=CC(OC)=CC=1)C=1C=CC(OC)=CC=1)C1=CC=C(OC)C=C1 XDXWNHPWWKGTKO-UHFFFAOYSA-N 0.000 description 3
- WEVYAHXRMPXWCK-UHFFFAOYSA-N Acetonitrile Chemical compound CC#N WEVYAHXRMPXWCK-UHFFFAOYSA-N 0.000 description 3
- 230000009471 action Effects 0.000 description 3
- 239000000969 carrier Substances 0.000 description 3
- 238000006243 chemical reaction Methods 0.000 description 3
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 description 3
- 229910001887 tin oxide Inorganic materials 0.000 description 3
- WJQOZHYUIDYNHM-UHFFFAOYSA-N 2-tert-Butylphenol Chemical compound CC(C)(C)C1=CC=CC=C1O WJQOZHYUIDYNHM-UHFFFAOYSA-N 0.000 description 2
- 229910021595 Copper(I) iodide Inorganic materials 0.000 description 2
- 229920001167 Poly(triaryl amine) Polymers 0.000 description 2
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 2
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 2
- 229910052801 chlorine Inorganic materials 0.000 description 2
- 150000001875 compounds Chemical class 0.000 description 2
- LSXDOTMGLUJQCM-UHFFFAOYSA-M copper(i) iodide Chemical compound I[Cu] LSXDOTMGLUJQCM-UHFFFAOYSA-M 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 229910052739 hydrogen Inorganic materials 0.000 description 2
- 239000001257 hydrogen Substances 0.000 description 2
- 229910052740 iodine Inorganic materials 0.000 description 2
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- 230000004048 modification Effects 0.000 description 2
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 description 2
- CPELXLSAUQHCOX-UHFFFAOYSA-M Bromide Chemical compound [Br-] CPELXLSAUQHCOX-UHFFFAOYSA-M 0.000 description 1
- VEXZGXHMUGYJMC-UHFFFAOYSA-M Chloride anion Chemical compound [Cl-] VEXZGXHMUGYJMC-UHFFFAOYSA-M 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- PNKUSGQVOMIXLU-UHFFFAOYSA-N Formamidine Chemical compound NC=N PNKUSGQVOMIXLU-UHFFFAOYSA-N 0.000 description 1
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- JKSIBASBWOCEBD-UHFFFAOYSA-N N,N-bis(4-methoxyphenyl)-9,9'-spirobi[fluorene]-1-amine Chemical compound COc1ccc(cc1)N(c1ccc(OC)cc1)c1cccc2-c3ccccc3C3(c4ccccc4-c4ccccc34)c12 JKSIBASBWOCEBD-UHFFFAOYSA-N 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- 125000000217 alkyl group Chemical group 0.000 description 1
- 230000004075 alteration Effects 0.000 description 1
- QHJPGANWSLEMTI-UHFFFAOYSA-N aminomethylideneazanium;iodide Chemical compound I.NC=N QHJPGANWSLEMTI-UHFFFAOYSA-N 0.000 description 1
- 238000001505 atmospheric-pressure chemical vapour deposition Methods 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 150000001721 carbon Chemical group 0.000 description 1
- 150000001732 carboxylic acid derivatives Chemical class 0.000 description 1
- 239000003153 chemical reaction reagent Substances 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 230000002708 enhancing effect Effects 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 229910052731 fluorine Inorganic materials 0.000 description 1
- 239000011737 fluorine Substances 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- XMBWDFGMSWQBCA-UHFFFAOYSA-N hydrogen iodide Chemical compound I XMBWDFGMSWQBCA-UHFFFAOYSA-N 0.000 description 1
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 1
- 230000031700 light absorption Effects 0.000 description 1
- QSZMZKBZAYQGRS-UHFFFAOYSA-N lithium;bis(trifluoromethylsulfonyl)azanide Chemical compound [Li+].FC(F)(F)S(=O)(=O)[N-]S(=O)(=O)C(F)(F)F QSZMZKBZAYQGRS-UHFFFAOYSA-N 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- ISWNAMNOYHCTSB-UHFFFAOYSA-N methanamine;hydrobromide Chemical compound [Br-].[NH3+]C ISWNAMNOYHCTSB-UHFFFAOYSA-N 0.000 description 1
- NQMRYBIKMRVZLB-UHFFFAOYSA-N methylamine hydrochloride Chemical compound [Cl-].[NH3+]C NQMRYBIKMRVZLB-UHFFFAOYSA-N 0.000 description 1
- 238000004806 packaging method and process Methods 0.000 description 1
- 238000002161 passivation Methods 0.000 description 1
- 230000000750 progressive effect Effects 0.000 description 1
- 230000006798 recombination Effects 0.000 description 1
- 238000005215 recombination Methods 0.000 description 1
- 239000005871 repellent Substances 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 238000003756 stirring Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 125000004417 unsaturated alkyl group Chemical group 0.000 description 1
- 229910052727 yttrium Inorganic materials 0.000 description 1
- 239000011787 zinc oxide Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
- H10K30/10—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation comprising heterojunctions between organic semiconductors and inorganic semiconductors
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
- H10K71/10—Deposition of organic active material
- H10K71/12—Deposition of organic active material using liquid deposition, e.g. spin coating
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
- H10K85/60—Organic compounds having low molecular weight
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/549—Organic PV cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Abstract
The embodiment of the invention provides a perovskite solar cell, a production method thereof and a perovskite cell assembly, and belongs to the technical field of photovoltaics. The perovskite solar cell specifically comprises: a substrate, and a conductive layer, a first carrier transport layer, a perovskite absorption layer, a first fluorinated organic compound layer, a second carrier transport layer, and an electrode which are sequentially formed on the substrate; wherein the fluoroorganic compound forming the first fluoroorganic compound layer includes a polar group including at least one of a nitrogen atom, an oxygen atom, a sulfur atom, and a phosphorus atom. In the embodiment of the invention, the first fluoro-organic compound layer can protect the perovskite absorption layer by utilizing the advantage of high hydrophobicity of the fluoro-organic compound, prevent external water vapor from invading the perovskite absorption layer, limit ion migration in the perovskite absorption layer, passivate interface defects of the perovskite absorption layer and improve the stability of the perovskite solar cell.
Description
Technical Field
The invention relates to the technical field of photovoltaics, in particular to a perovskite solar cell, a production method of the perovskite solar cell and a perovskite cell assembly.
Background
Perovskite solar cells have received much attention because of their high photoelectric conversion efficiency and low cost.
In the prior art, the perovskite material is easy to degrade under the condition of water and oxygen environment, and the perovskite material has phase defects, interface defects and ion migration, so that the perovskite solar cell is easy to have poor stability. Therefore, the following methods are generally required to improve the stability of perovskite solar cells: one method is to use a device packaging means to prevent water and oxygen from invading the inside of the perovskite solar cell, and the other method is to use a passivating agent to reduce internal defects of the perovskite material.
However, the device package can only prevent the battery finished product from being invaded by water and oxygen, but the water vapor adsorbed in the battery preparation process cannot be avoided, and the common passivation reagent can reduce the internal defects of the perovskite material, but contains hydrophilic groups, has limited resistance to humidity, and is unfavorable for obtaining the perovskite solar cell with higher stability.
Disclosure of Invention
In view of the above problems, embodiments of the present invention have been made to provide a perovskite solar cell, a method of producing a perovskite solar cell, and a perovskite cell assembly that overcome or at least partially solve the above problems.
To solve the above problems, in a first aspect, an embodiment of the present invention discloses a perovskite solar cell, including: a substrate, and a conductive layer, a first carrier transport layer, a perovskite absorption layer, a first fluorinated organic compound layer, a second carrier transport layer, and an electrode which are sequentially formed on the substrate; wherein,
the structure of the fluorinated organic compound forming the first fluorinated organic compound layer is:
wherein S can be straight-chain or branched hydrocarbon groups, n is the number of carbon atoms contained in S, n is an integer of 1-20, E is a polar group, the polar group contains at least one of nitrogen atoms, oxygen atoms, sulfur atoms and phosphorus atoms, and F is a hydrophobic fluoro group.
In the embodiment of the invention, the first fluoro-organic compound layer is arranged between the perovskite absorption layer and the second carrier transmission layer, and the fluoro-organic compound forming the first fluoro-organic compound layer comprises polar groups. On the one hand, the first fluoro-organic compound layer can protect the perovskite absorption layer by utilizing the advantage of high hydrophobicity of fluoro-organic compounds, prevent external water vapor from invading the perovskite absorption layer, and improve the stability of the perovskite solar cell. On the other hand, because the fluorinated organic compound includes a polar group, one of a nitrogen atom, an oxygen atom, a sulfur atom and a phosphorus atom in the polar group can be used to interact with ions in the perovskite absorption layer, so that migration of the ions is limited, and interface defects of the perovskite absorption layer can be passivated, so that the stability of the perovskite solar cell is further improved.
Alternatively, the polar group is selected from: at least one of amino, mercapto, hydroxyl, sulfonic acid, sulfonamide, carboxyl, aldehyde, ester, amide, phosphate, hypophosphite and corresponding salt compounds;
the fluoro group is selected from: at least one of fluoroalkyl, fluorophenyl, and fluoronaphthyl.
Optionally, the fluoroorganic compound is selected from: at least one of perfluorinated organic compounds, polyfluoro organic compounds, monofluoro organic compounds.
Optionally, the fluoroorganic compound is selected from: at least one of fluorothiol, fluorosulfonamide, fluoroaliphatic amine, fluoroaliphatic ammonium salt, fluoroaromatic amine and fluoroaromatic ammonium salt.
Optionally, the first fluorinated organic compound layer has a thickness of 1-50nm.
Optionally, the perovskite solar cell further comprises: a second fluorinated organic compound layer disposed between the perovskite absorbing layer and the first carrier transporting layer; wherein,
the structure of the fluorinated organic compound forming the second fluorinated organic compound layer is:
wherein S can be straight-chain or branched hydrocarbon groups, n is the number of carbon atoms contained in S, n is an integer of 1-20, E is a polar group, the polar group contains at least one of nitrogen atoms, oxygen atoms, sulfur atoms and phosphorus atoms, and F is a hydrophobic fluoro group.
Optionally, the perovskite absorber layer comprises: a perovskite material, or a perovskite material and a doped fluorinated organic compound.
Optionally, the perovskite material has a structure of: ABZ (ABZ) m Y 3-m ；
Wherein A is a monovalentA cation, said monovalent cation being selected from the group consisting of: CH (CH) 3 NH 3 + 、C 4 H 9 NH 3 + 、NH 2 ＝CHNH 2 + 、Cs + At least one of (a) and (b); b is a divalent metal ion selected from the group consisting of: at least one of Pb and Sn; z is halogen element; y is halogen, and Z and Y are not the same halogen at the same time; m=1, 2 or 3;
in the case of the perovskite material doped with the fluorinated organic compound, the ratio of the molar mass of the fluorinated organic compound to the molar mass of the monovalent cation a is between 0.5 and 40.
Alternatively, in the case where the perovskite solar cell is a single cell, the matrix is a substrate selected from: at least one of glass, polyethylene terephthalate, polyimide;
in the case where the perovskite solar cell is a stacked cell, the substrate is a bottom layer cell in the stacked cell, the bottom layer cell being selected from the group consisting of: at least one of a crystalline silicon cell, a perovskite cell and a copper indium gallium selenide cell.
Optionally, the first carrier transport layer is an electron transport layer, and the second carrier transport layer is a hole transport layer;
alternatively, the first carrier transport layer is a hole transport layer, and the second carrier transport layer is an electron transport layer.
In a second aspect, the invention also discloses a production method of the perovskite solar cell, which comprises the following steps:
forming a conductive layer on a substrate;
forming a first carrier transport layer on the conductive layer;
forming a perovskite absorption layer on the first carrier transport layer;
preparing a first fluoro-organic compound layer on the perovskite absorber layer;
forming a second carrier transport layer on the perovskite absorption layer;
forming an electrode on the second carrier transport layer;
wherein the structure of the fluorinated organic compound forming the first fluorinated organic compound layer is:
the S can be a straight-chain or branched hydrocarbon group, n is the number of carbon atoms contained in the S, n is an integer of 1-20, E is a polar group, the polar group contains at least one of nitrogen atoms, oxygen atoms, sulfur atoms and phosphorus atoms, and F is a hydrophobic fluoro group.
Optionally, before the step of forming the perovskite absorption layer on the first carrier transporting layer, the method further includes:
preparing a second fluorinated organic compound layer on the first carrier transport layer, wherein a structure of a fluorinated organic compound forming the second fluorinated organic compound layer is:
the S can be a straight-chain or branched hydrocarbon group, n is the number of carbon atoms contained in the S, n is an integer of 1-20, E is a polar group, the polar group contains at least one of nitrogen atoms, oxygen atoms, sulfur atoms and phosphorus atoms, and F is a hydrophobic fluoro group.
Optionally, the step of forming a perovskite absorption layer on the first carrier transporting layer includes:
doping a perovskite material and a fluorinated organic compound to obtain a doped perovskite material, wherein the structure of the fluorinated organic compound is as follows:
the S can be a straight-chain or branched hydrocarbon group, n is the number of carbon atoms contained in the S, n is an integer of 1-20, E is a polar group, the polar group contains at least one of nitrogen atoms, oxygen atoms, sulfur atoms and phosphorus atoms, and F is a hydrophobic fluoro group;
and forming a perovskite absorption layer on the first carrier transmission layer by adopting the perovskite material.
In a third aspect, the embodiments of the present invention also disclose a perovskite battery assembly, including: the perovskite solar cell.
The production method of the perovskite solar cell and the perovskite cell assembly have the same or similar beneficial effects as the perovskite solar cell.
Drawings
FIG. 1 is a schematic structural view of a perovskite solar cell of the invention;
FIG. 2 is a schematic structural view of another perovskite solar cell of the invention;
FIG. 3 is a schematic structural view of yet another perovskite solar cell of the invention;
FIG. 4 is a schematic structural view of yet another perovskite solar cell of the invention;
FIG. 5 is a flow chart of steps of a method of producing a perovskite solar cell of the invention;
FIG. 6 is a flow chart of steps of another method of producing a perovskite solar cell of the invention;
FIG. 7 is a flow chart of steps of a method of producing a perovskite absorber layer of the invention;
reference numerals illustrate: 10-substrate, 11-conductive layer, 12-first carrier transport layer, 13-perovskite absorption layer, 130-doped fluoro-organic compound, 14-first fluoro-organic compound layer, 15-second carrier transport layer, 16-electrode, 17-second fluoro-organic compound layer.
Detailed Description
In order that the above-recited objects, features and advantages of the present invention will become more readily apparent, a more particular description of the invention will be rendered by reference to the appended drawings and appended detailed description.
Referring to fig. 1, there is shown a schematic structural diagram of a perovskite solar cell of the present invention, and as shown in fig. 1, the perovskite solar cell may specifically include: a substrate 10, and a conductive layer 11, a first carrier transport layer 12, a perovskite absorption layer 13, a first fluoro-organic compound layer 14, a second carrier transport layer 15, and an electrode 16 formed in this order on the substrate 10; wherein the fluoroorganic compound forming the first fluoroorganic compound layer 14 includes a polar group.
The structure of the fluorinated organic compound may be:
wherein, S can be straight-chain or branched saturated alkyl or unsaturated alkyl, n is the number of carbon atoms contained in S, n is an integer of 1-20, E is a polar group, the polar group contains at least one of nitrogen atom, oxygen atom, sulfur atom and phosphorus atom, and F is a hydrophobic fluoro group.
In practical applications, since the polar group E contains at least one of a nitrogen atom, an oxygen atom, a sulfur atom and a phosphorus atom, the polar group E can be used to interact with lead and/or halogen ions in the perovskite absorption layer 13, so as to limit migration of the ions, and can passivate interface defects of the perovskite absorption layer 13, thereby further improving stability of the perovskite solar cell. The fluoro group F has the advantage of hydrophobicity, and can be used for protecting the perovskite absorption layer 13, preventing external water vapor from invading the perovskite absorption layer 13 and improving the stability of the perovskite solar cell.
Alternatively, the polar group E may be selected from: at least one of amino, mercapto, hydroxyl, sulfonic acid, sulfonamide, carboxylic acid, aldehyde, ester, amide, phosphate, hypophosphite and corresponding salt compounds thereof, so that the polar group E can well interact with ions in the perovskite absorption layer 13, limit migration of the ions, and passivate interface defects of the perovskite absorption layer 13. The fluoro group F may be selected from: at least one of fluoroalkyl, fluorophenyl, and fluoronaphthyl groups so that the first fluoroorganic compound layer 14 has good hydrophobicity.
Alternatively, the fluorinated organic compound may be selected from: at least one of fluorothiol, fluorosulfonamide, fluoroaliphatic amine, fluoroaliphatic ammonium salt, fluoroaromatic amine and fluoroaromatic ammonium salt, so that the first fluoroorganic compound layer 14 has good hydrophobic performance, can limit ion migration in the perovskite absorption layer 13, and can passivate interface defects of the perovskite absorption layer 13.
In particular, the substrate 10 may serve as a support body for the perovskite solar cell, which may be grown on the substrate 10.
In some embodiments of the invention, the perovskite solar cell is a single cell, in which case the matrix 10 may be a substrate, which may be selected from: at least one of glass, polyethylene terephthalate and polyimide.
In other embodiments of the invention, the perovskite solar cell is a stacked cell, such as a perovskite-crystalline silicon stacked cell, a perovskite-perovskite stacked cell, a perovskite-copper indium gallium selenide cell, or the like, in which case the substrate 10 may be an underlying cell that may include at least one of a crystalline silicon cell, a perovskite cell, a copper indium gallium selenide cell, or the like. For example, in the case where the laminated cell is a perovskite-crystalline silicon laminated cell, the underlying cell may be a silicon crystalline cell. As another example, where the laminate cell is a perovskite-perovskite laminate cell, the underlying cell may be a perovskite cell.
Specifically, the conductive layer 11 may be a transparent conductive layer formed on the substrate 10 by using an atmospheric pressure chemical vapor deposition process, and the conductive layer 11 may play a role in assisting carrier transport, and may transmit light, so as to further improve photoelectric conversion efficiency.
Illustratively, the material of the conductive layer 11 may be selected from: at least one of fluorine-doped tin oxide, indium tin oxide and aluminum-doped zinc oxide, the thickness of the conductive layer 11 can be 50-1000nm, and the specific material and thickness of the conductive layer 11 in the embodiment of the invention can be not limited.
In the embodiment of the present invention, the first carrier transport layer 12 may be used to implement the transport of the first carrier, and the second carrier transport layer 15 may be used to implement the transport of the second carrier. The first carrier may be selected from one of an electron or a hole, and the second carrier may be selected from the other of an electron or a hole. That is, when the first carrier is an electron, then the second carrier must be a hole; when the second carrier is an electron, then the first carrier must be a hole.
The first carrier transport layer 12 and the second carrier transport layer 15 are specifically an electron transport layer or a hole transport layer, and are determined according to the type of the perovskite solar cell. In the case where the perovskite solar cell is a regular perovskite solar cell, the first carrier transport layer 12 is an electron transport layer and the second carrier transport layer 15 is a hole transport layer. In the case where the perovskite solar cell is a trans perovskite solar cell, the first carrier transport layer 12 is a hole transport layer and the second carrier transport layer 15 is an electron transport layer.
In some embodiments of the invention, the material of the electron transport layer may be selected from: at least one of titanium oxide and tin oxide, and the thickness of the electron transport layer can be in the range of 5-100nm. The hole transport layer may be selected from: at least one of 2,2', 7' -tetrakis [ N, N-bis (4-methoxyphenyl) amino ] -9,9' -spirobifluorene (Spiro-OMeTAD), poly [ bis (4-phenyl) (2, 4, 6-trimethylphenyl) amine ] (PTAA) and cuprous iodide (CuI), and the thickness of the hole transport layer can be 10-150nm.
In practical applications, the perovskite absorption layer 13 may serve as a light absorption layer. Specifically, the perovskite absorption layer 13 first absorbs photons to generate electron-hole pairs when irradiated with sunlight. These carriers either become free carriers or form excitons due to the difference in exciton binding energy of the perovskite material. Moreover, because these perovskite materials tend to have lower carrier recombination probability and higher carrier mobility, the diffusion distance and lifetime of carriers are longer. Then, these uncomplexed electrons and holes are collected by the electron transport layer and the hole transport layer, respectively, i.e., electrons are transported from the perovskite absorption layer 13 to the electron transport layer and finally collected by the conductive layer 11; holes are transported from the perovskite absorption layer 13 to the hole transport layer and finally collected by the electrode 16. Finally, a photocurrent is generated by a circuit connecting the conductive layer 11 and the electrode 16, and photoelectric conversion is completed.
Specifically, the perovskite absorption layer 13 may be made of a perovskite material having a chemical formula of ABZ m Y 3-m Wherein the monovalent cation a may be selected from: CH (CH) 3 NH 3 、C 4 H 9 NH 3 、NH 2 ＝CHNH 2 At least one of Cs; the divalent metal ion B may be at least one selected from Pb and Sn; z is a halogen element such as Cl, br or I, Y is a halogen element such as Cl, br or I, and Z and Y are not the same element at the same time; m=1, 2 or 3. In order to achieve a better absorption of sunlight, the thickness of the perovskite absorption layer 13 may be in the range of 200-1500nm.
In particular, the electrode 16 may be used to collect holes and conduct electricity, and the electrode 16 may be manufactured by printing, deposition, or the like. The electrode 16 may be a metal electrode, which may be selected from: at least one of a copper electrode, a silver electrode, or a gold electrode to make the electrode 16 good in conductivity. The thickness of the electrode 16 may range from 10-400nm. The specific material and thickness of the electrode 16 may not be limited in the embodiments of the present invention.
In the embodiment of the present invention, the first fluoroorganic compound layer 14 may be provided between the perovskite absorption layer 13 and the second carrier transport layer 15, and the fluoroorganic compound forming the first fluoroorganic compound layer 14 may include a polar group including at least one of a nitrogen atom, an oxygen atom, a sulfur atom, and a phosphorus atom.
Specifically, the fluorinated organic compound may be an element organic compound in which hydrogen attached to a carbon atom in an organic compound molecule is substituted with fluorine. The compounds in which all carbon-hydrogen bonds in the molecule are converted into carbon-fluorine bonds are called perfluorinated organic compounds, and the partially substituted compounds are called monofluoro or polyfluoro organic compounds. Because the fluoro-organic compound contains hydrophobic fluoro-groups, the first fluoro-organic compound layer 14 can protect the perovskite absorption layer 13 by utilizing the advantage of high hydrophobicity of the fluoro-organic compound, prevent external water vapor from invading the perovskite absorption layer 13, and improve the stability of the perovskite solar cell.
Alternatively, the fluorinated organic compound may be selected from: at least one of a perfluorinated organic compound, a polyfluoro organic compound, and a monofluorinated organic compound is used to impart hydrophobic properties to the first fluorinated organic compound layer 14.
It is understood that since the hydrophobic perfluorinated organic compound and the hydrophobic polyfluoro organic compound contain more fluoro groups, the hydrophobic property is more excellent, and thus, in particular applications, the hydrophobic perfluorinated organic compound or the hydrophobic polyfluoro organic compound may be preferable to form the first fluorinated organic compound layer 14.
In an embodiment of the present invention, the fluorinated organic compound may include a polar group, and the polar group may be selected from: at least one of amino, mercapto and sulfonamide. In particular applications, the polar groups may be used to interact with the lead and/or halogen ion plasma in the perovskite absorber layer 13, limit migration of such ions, and may passivate interface defects of the perovskite absorber layer 13, further enhancing the stability of the perovskite solar cell.
Alternatively, the first fluoro-organic compound layer 14 has a thickness of 1-50nm. For example, in the case where the fluorinated organic compound layer is dense, the thickness of the first fluorinated organic compound layer 14 may be only a few molecular layers, that is, the thickness of the first fluorinated organic compound layer 14 may be only a few nanometers or so, so that the thickness of the first fluorinated organic compound layer 14 is thin.
Referring to fig. 2, there is shown a schematic structural diagram of another perovskite solar cell of the present invention, as illustrated in fig. 2, the perovskite solar cell may further include: a second fluorinated organic compound layer 17, the second fluorinated organic compound layer 17 being disposed between the perovskite absorption layer 13 and the first carrier transport layer 12.
Specifically, the structure of the fluorinated organic compound forming the second fluorinated organic compound layer is:
wherein S can be straight-chain or branched hydrocarbon groups, n is the number of carbon atoms contained in S, n is an integer of 1-20, E is a polar group, the polar group contains at least one of nitrogen atoms, oxygen atoms, sulfur atoms and phosphorus atoms, and F is a hydrophobic fluoro group.
In the embodiment of the invention, the perovskite absorption layer 13 can be protected by the second fluoro-organic compound layer 17 by utilizing the advantage of high hydrophobicity of the fluoro-organic compound, so that external water vapor is prevented from invading the perovskite absorption layer 13 from the side close to the substrate 10, and the stability of the perovskite solar cell is improved. Moreover, the polar groups in the second fluorinated organic compound layer 17 may be used to interact with ions in the perovskite absorption layer 13 to limit migration of the ions, and may also passivate interface defects of the perovskite absorption layer 13, further improving stability of the perovskite solar cell.
It will be appreciated that, because of the good water-repellent properties of the substrate 10, in particular applications, it is preferable to provide the first fluoro-organic compound layer 14 on the side of the perovskite absorption layer 13 remote from the substrate 10 to prevent external moisture from entering the perovskite absorption layer 13 on the side remote from the substrate 10. Of course, the second fluoro-organic compound layer 17 is disposed on the side of the perovskite absorption layer 13 near the substrate 10, so that external moisture can be better prevented from entering the perovskite absorption layer 13, and further, ion migration in the perovskite absorption layer 13 can be better restricted, and interface defects of the perovskite absorption layer 13 can be passivated.
Alternatively, in the perovskite solar cell according to the embodiment of the present invention, the first fluorinated organic compound layer 14 and/or the second fluorinated organic compound layer 17 may be provided, that is, the fluorinated organic compound layer may be provided on one side or both sides of the perovskite absorption layer 13, which is not limited in the embodiment of the present invention.
In some alternative embodiments of the present invention, the perovskite absorber layer 13 may comprise only perovskite material, and in other alternative embodiments of the present invention, the perovskite absorber layer 13 may comprise: perovskite material and doped fluoroorganic compound 130. That is, the fluorinated organic compound 130 having a polar group is doped in the perovskite material, and the perovskite absorption layer 13 is formed using the doped material.
Specifically, the fluorinated organic compound has the advantage of high hydrophobicity, and the polar groups in the fluorinated organic compound can be used for passivating perovskite materials and internal grain boundary defects, so that after the fluorinated organic compound is doped into the perovskite materials, the hydrophobicity of the perovskite absorption layer 13 is good, the grain boundary defects in the perovskite absorption layer 13 can be passivated, and the stability of the perovskite solar cell is improved.
It can be understood that in practical applications, in the case where the perovskite absorbing layer 13 includes the perovskite material and the doped fluorinated organic compound, since the perovskite absorbing layer 13 itself has better hydrophobic property, the internal grain boundary defect can be passivated, and the stability of the perovskite absorbing layer 13 is better, the fluorinated organic compound layer on one side or both sides of the perovskite absorbing layer 13 can be omitted according to practical situations, so as to simplify the structure of the perovskite solar cell, so as to obtain the perovskite solar cell shown in fig. 3 or fig. 4.
Optionally, in the case that the perovskite material is doped with the fluorinated organic compound, the ratio of the molar mass of the fluorinated organic compound to the molar mass of the monovalent cation a is 0.5 to 40, so that a better doping effect of the perovskite absorbing layer 13 is obtained.
Illustratively, the fluoroorganic compound is doped in a molar ratio of: x% = M The fluorinated organic compound /M A Wherein, the value of xMay be 0.5 to 40.
For example, in the case where the perovskite material is made using formamidine hydroiodidate (Formamidinium Iodide, FAI), methyl amine bromide (Methylammonium bromide, MABr) and methyl amine chloride (Methylammonium chloride, MACl), M A Can be M FAI 、M MABr And M MACl And (3) summing.
In summary, the perovskite solar cell according to the embodiment of the invention has at least the following advantages:
in the embodiment of the invention, the first fluoro-organic compound layer is arranged between the perovskite absorption layer and the second carrier transmission layer, and the fluoro-organic compound forming the first fluoro-organic compound layer comprises polar groups. On the one hand, the first fluoro-organic compound layer can protect the perovskite absorption layer by utilizing the advantage of high hydrophobicity of fluoro-organic compounds, prevent external water vapor from invading the perovskite absorption layer, and improve the stability of the perovskite solar cell. On the other hand, because the fluorinated organic compound includes a polar group, one of a nitrogen atom, an oxygen atom, a sulfur atom and a phosphorus atom in the polar group can be used to interact with ions in the perovskite absorption layer, so that migration of the ions is limited, and interface defects of the perovskite absorption layer can be passivated, so that the stability of the perovskite solar cell is further improved.
The embodiment of the invention also provides a production method of the perovskite solar cell, so as to produce the perovskite solar cell.
Referring to fig. 5, there is shown a step flow chart of a production method of a perovskite solar cell of the present invention, as shown in fig. 5, the production method may specifically include the steps of:
step 501: a conductive layer is formed on the substrate.
In the embodiment of the invention, the conductive layer 11 may be formed on the substrate 10 by adopting a normal pressure chemical vapor deposition process, where the substrate 10 may be a transparent substrate when the perovskite solar cell is a single cell, and the substrate 10 may be a bottom layer cell when the perovskite solar cell is a stacked cell.
Specifically, the thickness of the conductive layer 11 may be in the range of 50-1000nm, the sheet resistance is 10Ω/sq, and the sheet resistance is cut into a size of 2cm×2cm, and cleaned.
Step 502: a first carrier transport layer is formed on the conductive layer.
In the embodiment of the present invention, when the perovskite solar cell is a regular perovskite solar cell, the first carrier transport layer 12 is an electron transport layer, and when the perovskite solar cell is a trans perovskite solar cell, the first carrier transport layer 12 is a hole transport layer.
Specifically, in the case where the first carrier transport layer 12 is an electron transport layer, the electron transport layer may be formed on the conductive layer 11 using a process of spin-coating titanium oxide or tin oxide, and the electron transport layer may have a thickness ranging from 5 to 100nm.
In the case where the first carrier transport layer 12 is a hole transport layer, the hole transport layer may be prepared by the following method: preparing a chlorobenzene solution of Spiro-OMeTAD with the concentration of 72.3mg/mL, and dissolving by ultrasonic for 10min. To 1mL of the chlorobenzene solution of the Spiro-OMeTAD, 20. Mu.L of the acetonitrile solution of lithium bistrifluoromethane sulfonimide (Li-TFSI) and 24. Mu.L of t-butylphenol (4-t-BP) were added, and spin coating was performed after stirring, wherein the spin coating rotational speed was 3000rpm, and the spin coating time was 30s. The thickness of the hole transport layer may range from 10 to 150nm
Step 503: a perovskite absorber layer is formed on the first carrier transporting layer.
In the embodiment of the present invention, the perovskite absorption layer 13 may be formed on the first carrier transport layer 12 using a two-step method. The specific method comprises the following steps: first, a lead iodide solution [1.3M, dimethyl sulfoxide (Dimethyl sulfoxide, DMSO): N, N-Dimethylformamide (DMF) =9:1 ] was spin-coated on the first carrier transport layer 12, and the mixture was heated on a hot plate at 70 ℃ for 1min after completion of the heating, and then the cooled mixture solution of FAI/MABr/MACl (FAI: MABr: macl=10:1:1, isopropyl alcohol solution, 60 mg/mL) was spin-coated. Immediately placing on a hot table at 150 ℃ for heating for 15min after spin coating. The thickness of the perovskite absorption layer 13 may range from 200 to 1500nm.
Step 504: preparing a first fluorinated organic compound layer on the perovskite absorption layer, wherein the structure of the fluorinated organic compound forming the first fluorinated organic compound layer is as follows:
the S can be a straight-chain or branched hydrocarbon group, n is the number of carbon atoms contained in the S, n is an integer of 1-20, E is a polar group, the polar group contains at least one of nitrogen atoms, oxygen atoms, sulfur atoms and phosphorus atoms, and F is a hydrophobic fluoro group.
In the embodiment of the present invention, the first fluoro-organic compound layer 14 may be formed on the perovskite absorption layer 13 using a spin coating process. Specifically, the first fluorinated organic compound layer 14 may be formed by the following method: using a pipette, 95. Mu.L of the fluoroorganic compound (isopropyl alcohol solution, 5 mg/mL) was pipetted and spin-coated at 3000rpm for 30s, after which time the solution was annealed at 110℃for 10min to remove the isopropyl alcohol solution. The first fluoro-organic compound layer 14 has a thickness of 1 to 50nm.
Step 505: a second carrier transport layer is formed on the perovskite absorber layer.
In the embodiment of the present invention, the second carrier transport layer 15 is a hole transport layer in the case where the perovskite solar cell is a regular perovskite solar cell, and the second carrier transport layer 15 is an electron transport layer in the case where the perovskite solar cell is a trans perovskite solar cell. The preparation methods of the hole transport layer and the electron transport layer can refer to step 502, and are not described herein.
Step 506: an electrode is formed on the second carrier transport layer.
In the embodiment of the present invention, the electrode 16 may be formed on the second carrier transport layer 15 by an evaporation process, and the thickness of the electrode 16 may be in a range of 10-400nm.
It should be noted that, in the steps of the method, the substrate 10, the conductive layer 11, the first carrier transporting layer 12, the perovskite absorbing layer 13, the first fluoro organic compound layer 14, the second carrier transporting layer 15, and the electrode 16 may be specifically referred to the foregoing descriptions, and may achieve the same or similar beneficial effects, and in order to avoid repetition, the description is omitted here.
Referring to fig. 6, there is shown a step flow chart of another production method of perovskite solar cell of the invention, on the basis of the production method shown in fig. 5, the production method shown in fig. 6 further includes, before step 503:
step 507: preparing a second fluorinated organic compound layer on the first carrier transport layer, wherein a structure of a fluorinated organic compound forming the second fluorinated organic compound layer is:
the S can be a straight-chain or branched hydrocarbon group, n is the number of carbon atoms contained in the S, n is an integer of 1-20, E is a polar group, the polar group contains at least one of nitrogen atoms, oxygen atoms, sulfur atoms and phosphorus atoms, and F is a hydrophobic fluoro group.
Specifically, the preparation method of the second fluorinated organic compound layer 17 may refer to step 504, which is not described herein.
It should be noted that, the second fluorinated organic compound layer 17 of the method may be specifically described with reference to the foregoing descriptions, and may achieve the same or similar beneficial effects, and in order to avoid repetition, the description is omitted here.
Referring to fig. 7, there is shown a flow chart of steps of a method of producing a perovskite absorber layer of the invention, which may specifically include:
step 5031: doping a perovskite material and a fluorinated organic compound to obtain a doped perovskite material, wherein the structure of the fluorinated organic compound is as follows:
the S can be a straight-chain or branched hydrocarbon group, n is the number of carbon atoms contained in the S, n is an integer of 1-20, E is a polar group, the polar group contains at least one of nitrogen atoms, oxygen atoms, sulfur atoms and phosphorus atoms, and F is a hydrophobic fluoro group.
In the embodiment of the invention, the fluorinated organic compound containing the polar group can be doped in the perovskite material to obtain the doped perovskite material. The ratio of the molar mass of the fluoroorganic compound to the molar mass of the monovalent cation a is from 0.5 to 40, i.e. wherein the doping molar ratio of the fluoroorganic compound is: x% = M The fluorinated organic compound /M A Wherein, the value of x can be 0.5-40.
Step 5032: and forming a perovskite absorption layer on the first carrier transmission layer by adopting the perovskite material.
In the embodiment of the present invention, the perovskite absorbing layer 13 may be formed on the first carrier transporting layer 12 by using the doped perovskite material, and the specific preparation process may refer to step 503 of the foregoing embodiment.
It should be noted that, the perovskite absorption layer 13 doped with the fluorinated organic compound may refer to the foregoing descriptions, and may achieve the same or similar beneficial effects, and in order to avoid repetition, the description is omitted here.
The embodiment of the invention also provides a perovskite battery component, which comprises: any of the foregoing perovskite solar cells. The substrate, the conductive layer, the first carrier transport layer, the perovskite absorption layer, the first fluoro-organic compound layer, the second carrier transport layer, the electrode and the first fluoro-organic compound layer in the assembly can be specifically referred to the above description, and can achieve the same or similar beneficial effects, and in order to avoid repetition, the description is omitted here.
In this specification, each embodiment is described in a progressive manner, and each embodiment is mainly described by differences from other embodiments, and identical and similar parts between the embodiments are all enough to be referred to each other.
While preferred embodiments of the present invention have been described, additional variations and modifications in those embodiments may occur to those skilled in the art once they learn of the basic inventive concepts. It is therefore intended that the following claims be interpreted as including the preferred embodiment and all such alterations and modifications as fall within the scope of the embodiments of the invention.
Finally, it is further noted that relational terms such as first and second, and the like are used solely to distinguish one entity or action from another entity or action without necessarily requiring or implying any actual such relationship or order between such entities or actions. Moreover, the terms "comprises," "comprising," or any other variation thereof, are intended to cover a non-exclusive inclusion, such that a process, method, article, or terminal that comprises a list of elements does not include only those elements but may include other elements not expressly listed or inherent to such process, method, article, or terminal. Without further limitation, an element defined by the phrase "comprising one … …" does not exclude the presence of other like elements in a process, method, article or terminal device comprising the element.
The above description of a perovskite solar cell, a method for producing a perovskite solar cell and a perovskite battery provided by the invention, the specific examples are applied to illustrate the principles and embodiments of the invention, and the above examples are only used to help understand the method and core ideas of the invention; meanwhile, as those skilled in the art will have variations in the specific embodiments and application scope in accordance with the ideas of the present invention, the present description should not be construed as limiting the present invention in view of the above.
Claims (14)
1. A perovskite solar cell, comprising: a substrate, and a conductive layer, a first carrier transport layer, a perovskite absorption layer, a first fluorinated organic compound layer, a second carrier transport layer, and an electrode which are sequentially formed on the substrate; wherein,
the structure of the fluorinated organic compound forming the first fluorinated organic compound layer is:
wherein S is a straight-chain or branched hydrocarbon group, n is the number of carbon atoms contained in S, n is an integer of 1-20, E is a polar group, the polar group contains at least one of nitrogen atoms, oxygen atoms, sulfur atoms and phosphorus atoms, and F is a hydrophobic fluoro group;
at least one atom of nitrogen, oxygen, sulfur and phosphorus atoms in the polar group is used to interact with ions in the perovskite absorption layer, limit migration of the ions, and passivate interface defects of the perovskite absorption layer.
2. The perovskite solar cell according to claim 1, wherein the polar group is selected from the group consisting of: at least one of amino, mercapto, hydroxyl, sulfonic acid, sulfonamide, carboxyl, aldehyde, ester, amide, phosphate, hypophosphite and corresponding salts thereof;
the fluoro group is selected from: at least one of fluoroalkyl, fluorophenyl, and fluoronaphthyl.
3. The perovskite solar cell according to claim 1, wherein the fluorinated organic compound is selected from the group consisting of: at least one of perfluorinated organic compounds, polyfluoro organic compounds, monofluoro organic compounds.
4. The perovskite solar cell according to claim 1, wherein the fluorinated organic compound is selected from the group consisting of: at least one of fluorothiol, fluorosulfonamide, fluoroaliphatic amine, fluoroaliphatic ammonium salt, fluoroaromatic amine and fluoroaromatic ammonium salt.
5. The perovskite solar cell of claim 1, wherein the first fluorinated organic compound layer has a thickness of 1-50nm.
6. The perovskite solar cell according to claim 1, wherein the perovskite solar cell comprises: a second fluorinated organic compound layer disposed between the perovskite absorption layer and the first carrier transport layer; wherein,
the structure of the fluorinated organic compound forming the second fluorinated organic compound layer is:
wherein S is a straight-chain or branched hydrocarbon group, n is the number of carbon atoms contained in S, n is an integer of 1-20, E is a polar group, the polar group contains at least one of nitrogen atoms, oxygen atoms, sulfur atoms and phosphorus atoms, and F is a hydrophobic fluoro group.
7. The perovskite solar cell of claim 1, wherein the perovskite absorber layer comprises: a perovskite material, or a perovskite material and a doped fluorinated organic compound.
8. The perovskite solar cell of claim 7, wherein the perovskite material has a structure of: ABZ (ABZ) m Y 3-m ；
Wherein a is a monovalent cation selected from the group consisting of: CH (CH) 3 NH 3 + 、C 4 H 9 NH 3 + 、NH 2 ＝CHNH 2 + 、Cs + At least one of (a) and (b);b is a divalent metal ion selected from the group consisting of: at least one of Pb and Sn; z is halogen element; y is halogen, and Z and Y are not the same halogen at the same time; m=1, 2 or 3;
in the case of the perovskite material doped with the fluorinated organic compound, the ratio of the molar mass of the fluorinated organic compound to the molar mass of the monovalent cation a is between 0.5 and 40.
9. The perovskite solar cell according to claim 1, wherein in case the perovskite solar cell is a single cell, the matrix is a substrate selected from the group consisting of: at least one of glass, polyethylene terephthalate, polyimide;
in the case where the perovskite solar cell is a stacked cell, the substrate is a bottom layer cell in the stacked cell, the bottom layer cell being selected from the group consisting of: at least one of a crystalline silicon cell, a perovskite cell and a copper indium gallium selenide cell.
10. The perovskite solar cell of claim 1, wherein the first carrier transport layer is an electron transport layer and the second carrier transport layer is a hole transport layer;
alternatively, the first carrier transport layer is a hole transport layer, and the second carrier transport layer is an electron transport layer.
11. A method of producing a perovskite solar cell, comprising:
forming a conductive layer on a substrate;
forming a first carrier transport layer on the conductive layer;
forming a perovskite absorption layer on the first carrier transport layer;
preparing a first fluoro-organic compound layer on the perovskite absorber layer;
forming a second carrier transport layer on the perovskite absorption layer;
forming an electrode on the second carrier transport layer;
wherein the structure of the fluorinated organic compound forming the first fluorinated organic compound layer is:
the S is a straight-chain or branched hydrocarbon group, n is the number of carbon atoms contained in the S, n is an integer of 1-20, E is a polar group, the polar group contains at least one of nitrogen atoms, oxygen atoms, sulfur atoms and phosphorus atoms, and F is a hydrophobic fluoro group;
at least one atom of nitrogen, oxygen, sulfur and phosphorus atoms in the polar group is used to interact with ions in the perovskite absorption layer, limit migration of the ions, and passivate interface defects of the perovskite absorption layer.
12. The method of producing a perovskite solar cell according to claim 11, further comprising, prior to the step of forming a perovskite absorber layer on the first carrier transporting layer:
preparing a second fluorinated organic compound layer on the first carrier transport layer, wherein a structure of a fluorinated organic compound forming the second fluorinated organic compound layer is:
the S is a straight-chain or branched hydrocarbon group, n is the number of carbon atoms contained in the S, n is an integer of 1-20, E is a polar group, the polar group contains at least one of nitrogen atoms, oxygen atoms, sulfur atoms and phosphorus atoms, and F is a hydrophobic fluoro group.
13. The method of producing a perovskite solar cell according to claim 11, wherein the step of forming a perovskite absorber layer on the first carrier transporting layer comprises:
doping a perovskite material and a fluorinated organic compound to obtain a doped perovskite material, wherein the structure of the fluorinated organic compound is as follows:
the S is a straight-chain or branched hydrocarbon group, n is the number of carbon atoms contained in the S, n is an integer of 1-20, E is a polar group, the polar group contains at least one of nitrogen atoms, oxygen atoms, sulfur atoms and phosphorus atoms, and F is a hydrophobic fluoro group;
and forming a perovskite absorption layer on the first carrier transmission layer by adopting the perovskite material.
14. A perovskite battery assembly, comprising: the perovskite solar cell of any one of claims 1 to 10.
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