CN111477750A - Back electrode containing fluorescent material, perovskite solar cell and preparation method of back electrode - Google Patents

Back electrode containing fluorescent material, perovskite solar cell and preparation method of back electrode Download PDF

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CN111477750A
CN111477750A CN202010593745.9A CN202010593745A CN111477750A CN 111477750 A CN111477750 A CN 111477750A CN 202010593745 A CN202010593745 A CN 202010593745A CN 111477750 A CN111477750 A CN 111477750A
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fluorescent material
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不公告发明人
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Hangzhou Microquanta Semiconductor Corp ltd
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    • H10K30/15—Sensitised wide-bandgap semiconductor devices, e.g. dye-sensitised TiO2
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    • H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
    • H10K30/10—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation comprising heterojunctions between organic semiconductors and inorganic semiconductors
    • H10K30/15—Sensitised wide-bandgap semiconductor devices, e.g. dye-sensitised TiO2
    • H10K30/151—Sensitised wide-bandgap semiconductor devices, e.g. dye-sensitised TiO2 the wide bandgap semiconductor comprising titanium oxide, e.g. TiO2
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Abstract

The invention relates to a back electrode containing a fluorescent material, which is prepared from a metal material and a fluorescent material, wherein the metal material and the fluorescent material are mutually doped in a co-evaporation mode, the fluorescent material doped in the back electrode accounts for 0.05-10 wt% of the metal material, the metal material comprises any one of silver, gold, copper and aluminum, the fluorescent material comprises a fluorescent dye or a fluorescent quantum dot, the fluorescent dye comprises an organic fluorescent material, and the fluorescent quantum dot is a perovskite quantum dot with a core-shell structure. The invention also discloses a preparation method of the back electrode, a perovskite solar cell using the back electrode and a preparation method of the perovskite solar cell. According to the invention, the fluorescent material and the metal back electrode are simultaneously evaporated to form the metal back electrode doped with the fluorescent material, and the absorptivity of the light absorption layer of the perovskite solar cell is improved by utilizing the photoluminescence performance of the fluorescent material, so that the energy conversion efficiency of the perovskite solar cell is improved.

Description

Back electrode containing fluorescent material, perovskite solar cell and preparation method of back electrode
Technical Field
The invention belongs to the technical field of perovskite solar cell preparation, and particularly relates to a back electrode containing a fluorescent material, a perovskite solar cell and a preparation method of the perovskite solar cell.
Background
The perovskite solar cell has the remarkable advantages of being cleaner, convenient to apply, low in manufacturing cost, high in efficiency and the like, is rapidly a hot spot of international scientific research and industry attention, and the photoelectric conversion efficiency of the perovskite solar cell is improved from 3.8% to more than 24%, so that the perovskite solar cell has great commercial value. How to further improve the efficiency of perovskite cells is an ongoing technical problem.
By designing the structure of the perovskite crystal and adding different additives, the perovskite battery with different band gaps and higher stability and efficiency is obtained, and the method is an effective method for improving the performance. However, this method is poor in reproducibility and mostly depends on a solution method, and thus mass production is difficult.
The chemical vapor deposition method is a method with lower toxicity and better repeatability, but a certain technical bottleneck exists because the perovskite film layer prepared by the chemical vapor deposition method is poorer in contact with other film layers and has better stability than that prepared by a solution method.
Therefore, how to use a simple optimization method to improve the efficiency of the battery without changing the structures of the perovskite light absorption layer and other functional layers is an important research direction for future commercialization of perovskite batteries.
Disclosure of Invention
The invention aims to solve the technical problem of providing a back electrode containing a fluorescent material, a perovskite solar cell and a preparation method thereof.
The invention is realized in such a way, and provides a back electrode containing a fluorescent material, wherein the preparation material comprises a metal material and a fluorescent material, the metal material and the fluorescent material are mutually doped in a co-evaporation mode, the fluorescent material doped in the back electrode accounts for 0.05-10 wt% of the metal material, the metal material comprises any one of silver, gold, copper and aluminum, the fluorescent material comprises a fluorescent dye or a fluorescent quantum dot, the fluorescent dye comprises an organic fluorescent material, and the fluorescent quantum dot is a perovskite quantum dot with a core-shell structure.
Further, the organic fluorescent material comprises oxadiazole and derivatives thereof, triazole and derivatives thereof, rhodamine and derivatives thereof, and incenseAny one of a coumarin derivative, a 1, 8-naphthalimide derivative, a pyrazoline derivative, a triphenylamine derivative, a porphyrin compound, carbazole, pyrazine, a thiazole derivative and a perylene derivative; the fluorescent quantum dots comprise perovskite quantum dot materials coated by silicon dioxide or boron nitride, and the perovskite quantum dot materials comprise MAPbX3、FAPbX3、CsPbX3、CsSnX3、MA3Bi2X9、Cs3Sb2X9、Cs2AgSbX6、Cs3Bi2X9Any one of them, wherein X is Cl-、Br-Or I-。
Further, when the metal material and the fluorescent material are subjected to co-evaporation, the evaporation rate of the metal material is 1 Å/s-10 Å/s, the evaporation rate of the fluorescent material is 0.1 Å/s-3 Å/s, and the finally doped fluorescent material accounts for 0.05wt% -10 wt% of the metal material.
The invention is realized in such a way, and also provides a preparation method of the back electrode containing the fluorescent material, which comprises the following steps of putting the metal material and the fluorescent material into evaporation equipment as different evaporation sources for evaporation, controlling the evaporation rate of the metal material to be 1 Å/s-10 Å/s, controlling the evaporation rate of the fluorescent material to be 0.1 Å/s-3 Å/s, and finally obtaining the back electrode containing the fluorescent material.
The perovskite solar cell has an internal structure comprising a first carrier transmission layer, a perovskite light absorption layer, a second carrier transmission layer and a back electrode, wherein the back electrode adopts the back electrode containing the fluorescent material.
The invention is realized in such a way, and further provides a perovskite solar cell, the internal structure of which comprises a first carrier transmission layer, a perovskite light absorption layer, a second carrier transmission layer and a back electrode, wherein the back electrode is prepared by the preparation method of the back electrode containing the fluorescent material.
The invention is realized in such a way, and also provides a preparation method of the perovskite solar cell, which comprises the following steps:
step one, carrying out P1 scribing on a substrate containing a conductive layer, and cutting and partitioning the conductive layer;
step two, sequentially preparing a first carrier transmission layer and a perovskite light absorption layer on the conducting layer, and carrying out P2 scribing to expose the conducting layer;
and step three, preparing a back electrode containing a fluorescent material on the perovskite light absorption layer, carrying out P3 scribing on the back electrode to expose the conductive layer, and finally preparing the perovskite solar cell.
Compared with the prior art, the back electrode containing the fluorescent material, the perovskite solar cell and the preparation method thereof have the advantages that the fluorescent material and the metal back electrode are simultaneously evaporated to form the metal back electrode doped with the fluorescent material. The back electrode is doped with the fluorescent material, so that the problem that sunlight transmitted to the electrode by a conventional photovoltaic module using the carbon electrode as the back electrode is not fully utilized is solved. The adopted fluorescent material can convert ultraviolet or visible short wave part into visible light, and the visible light is reflected to the surface of the perovskite light absorption layer, so that the light absorption layer generates secondary absorption, and the photocurrent and energy conversion efficiency are improved. Since the metal electrode material does not react with the fluorescent material, both can be present in the same system. Because the energy level of the metal back electrode is not affected by the doping of the fluorescent material in a small amount, the energy level of the fluorescent material is matched with other functional layers, and the protective layer of the fluorescent material can protect the fluorescent material from reacting with the metal back electrode.
Drawings
Fig. 1 is a graph showing J-V comparison curves of a perovskite solar cell prepared in example 1 of the present invention and a conventional perovskite solar cell having a back electrode without a fluorescent material.
Detailed Description
In order to make the technical problems, technical solutions and advantageous effects to be solved by the present invention more clearly apparent, the present invention is further described in detail below with reference to the accompanying drawings and embodiments. It should be understood that the specific embodiments described herein are merely illustrative of the invention and are not intended to limit the invention.
According to the preferred embodiment of the back electrode containing the fluorescent material, the back electrode contains not only the metal material but also the fluorescent material, the preparation materials of the back electrode comprise the metal material and the fluorescent material, the metal material and the fluorescent material are mutually doped in a co-evaporation mode, and the fluorescent material doped in the back electrode accounts for 0.05-10 wt% of the metal material. The metal material comprises any one of silver, gold, copper and aluminum, the fluorescent material comprises fluorescent dye or fluorescent quantum dots, the fluorescent dye comprises organic fluorescent material, and the fluorescent quantum dots are perovskite quantum dots with core-shell structures.
The organic fluorescent material comprises any one of oxadiazole and derivatives thereof, triazole and derivatives thereof, rhodamine and derivatives thereof, coumarin derivatives, 1, 8-naphthalimide derivatives, pyrazoline derivatives, triphenylamine derivatives, porphyrin compounds, carbazole, pyrazine, thiazole derivatives and perylene derivatives.
The fluorescent quantum dots comprise perovskite quantum dot materials coated by silicon dioxide or boron nitride, and the perovskite quantum dot materials comprise MAPbX3、FAPbX3、CsPbX3、CsSnX3、MA3Bi2X9、Cs3Sb2X9、Cs2AgSbX6、Cs3Bi2X9Any one of them, wherein X is Cl-、Br-Or I-。
When the metal material and the fluorescent material are subjected to co-evaporation, the evaporation rate of the metal material is 1 Å/s-10 Å/s, the evaporation rate of the fluorescent material is 0.1 Å/s-3 Å/s, and the finally doped fluorescent material accounts for 0.05wt% -10 wt% of the metal material.
The invention also discloses a preparation method of the back electrode containing the fluorescent material, which comprises the following steps of putting the metal material and the fluorescent material into evaporation equipment as different evaporation sources for evaporation, controlling the evaporation rate of the metal material to be 1 Å/s-10 Å/s and the evaporation rate of the fluorescent material to be 0.1 Å/s-3 Å/s, and finally obtaining the back electrode containing the fluorescent material.
The invention also discloses a perovskite solar cell, the internal structure of which comprises a first carrier transmission layer, a perovskite light absorption layer, a second carrier transmission layer and a back electrode, wherein the back electrode adopts the back electrode containing the fluorescent material.
The invention also discloses a perovskite solar cell, the internal structure of which comprises a first carrier transmission layer, a perovskite light absorption layer, a second carrier transmission layer and a back electrode, wherein the back electrode is prepared by the preparation method of the back electrode containing the fluorescent material.
The invention also discloses a preparation method of the perovskite solar cell, which comprises the following steps:
step one, carrying out P1 scribing on the substrate containing the conductive layer, and cutting and dicing the conductive layer.
And step two, sequentially preparing a first carrier transmission layer and a perovskite light absorption layer on the conductive layer, and carrying out P2 scribing to expose the conductive layer.
And step three, preparing a back electrode containing a fluorescent material on the perovskite light absorption layer, carrying out P3 scribing on the back electrode to expose the conductive layer, and finally preparing the perovskite solar cell.
The following will further illustrate the preparation method of the perovskite solar cell of the present invention with reference to specific examples.
Example 1
A first embodiment of a method of fabricating a perovskite solar cell of the present invention comprises the steps of:
step 11, P1 processing: and carrying out laser etching on the ITO conductive glass substrate, etching to remove ITO with the width of 50 mu m, marking as P1 marking, cleaning the glass substrate, drying the glass substrate by blowing nitrogen, and carrying out ultraviolet ozone treatment.
Step 12, preparing a first carrier transport layer: a hole transport material NiOx as a first carrier transport layer was deposited on the substrate to a thickness of 20 nm.
And step 13, preparing a perovskite light absorption layer, namely continuously coating the prepared perovskite precursor solution in a slit manner, wherein the amount of methylamine hydroiodide and lead iodide is equal, dissolving the solution in a mixed solvent of N, N-dimethylformamide and dimethyl sulfoxide with the volume ratio of 4:1, the concentration of the lead iodide is 0.7 mol/L, and annealing at 100 ℃ for 10min to prepare the perovskite light absorption layer with the thickness of 500 nm.
Step 14, P2 processing: a second parallel etch was performed at 200nm to the right of P1 using laser etching to form a 100 μm spacer exposing ITO, marked as a P2 scribe.
Step 15, preparing a second carrier transport layer: spin-coating PC71BM made an electron transport layer 30nm thick as the second carrier transport layer.
And step 16, preparing the back electrode containing the fluorescent material, namely respectively placing rhodamine and silver in different evaporation sources, wherein the evaporation rate of the rhodamine is 0.1 Å/s, the evaporation time is 750s, the evaporation rate of the silver is 2 Å/s, the evaporation time is 750s, and co-evaporation is carried out to generate the fluorescent material-doped silver electrode.
Step 17, P3 processing: and carrying out third parallel etching at 200nm on the right side of the P2 by a physical scribing method to form a 100-micron spacer exposing the ITO, marking as a P3 scribing line, and finally manufacturing the perovskite solar cell.
Referring to fig. 1, the perovskite solar cell (with fluorescent material) using the back electrode containing fluorescent material prepared in this example and the perovskite solar cell (without fluorescent material) using the back electrode containing no fluorescent material in the prior art were respectively subjected to a J-V (current density-voltage) performance test to obtain a comparative test curve as shown in fig. 1.
In the existing perovskite solar cell without the back electrode made of the fluorescent material, the perovskite light absorption layer cannot absorb all sunlight irradiated on the cell, one part of the sunlight is transmitted to the back electrode, and the conventional metal electrode has a certain reflection effect, so that the light energy absorbed by the perovskite light absorption layer is reduced, and the photoelectric conversion efficiency of the perovskite solar cell is reduced.
In the perovskite solar cell using the back electrode containing the fluorescent material in this embodiment, the fluorescent material absorbs the transmitted sunlight, and converts the short-wavelength light into the longer-wavelength visible light to be reflected, so that the light absorbing layer can absorb the secondary light, thereby improving the photoelectric conversion efficiency of the perovskite solar cell.
As can be seen from the figure, the perovskite solar cell to which the fluorescent material is added has a higher short-circuit photocurrent than the perovskite solar cell to which the fluorescent material is not added. This is because the fluorescent material converts a portion of the uv or short wavelength visible light transmitted to the back electrode into short or long wavelength visible light, which is absorbed and converted by the light absorbing layer, thereby increasing the short circuit photocurrent of the battery and finally increasing the energy conversion efficiency of the battery.
Meanwhile, the cell performance parameters of the fluorescent material-added perovskite solar cell and the fluorescent material-free perovskite solar cell of the present embodiment are shown in table 1.
TABLE 1
Voc/V Jsc/mA.cm-2 FF η/%
Non-fluorescent material 0.98 22.10 80.13 17.75
With fluorescent material 0.98 24.37 81.27 19.45
Example 2
A second embodiment of the method of fabricating a perovskite solar cell of the present invention comprises the steps of:
step 21, P1 processing: and (3) carrying out laser etching on the FTO conductive glass substrate, etching to remove the FTO with the width of 50 microns, marking as P1 marking, cleaning the glass substrate, drying the glass substrate by blowing nitrogen, and carrying out ultraviolet ozone treatment.
Step 22, preparing a first carrier transport layer: deposition of an electron transport material TiO on a substrate2And a dense layer with the thickness of 20nm and a mesoporous layer with the thickness of 100nm are sequentially used as a first carrier transmission layer.
Step 23, preparing a perovskite light absorption layer: heating the substrate to 60 ℃ in a nitrogen atmosphere by using roll-to-roll technology, and preparing the prepared perovskite precursor solution Cs under the assistance of hot air0.15FA0.85PbI3Coating the solution on a substrate, wherein the concentration of the solution is 1 mol/L, the solvent is 1, 4-butyrolactone and a small amount of N-methylpyrrolidone, then quickly immersing the substrate into a chlorobenzene solution, and annealing the substrate at 100 ℃ for 30min to prepare a 600nm thick perovskite light absorption layer.
Step 24, P2 processing: a second parallel etch using laser etching at 300nm to the right of P1 formed a 150 μm spacer exposing the FTO, marked as a P2 scribe.
Step 25, preparing a second carrier transport layer: PSS (PEDOT) serving as a hole transport material with the thickness of 20nm is coated on the substrate in a scraping mode to serve as a second carrier transport layer.
Step 26, preparing a back electrode containing a fluorescent material: cs coated with boron nitride3Sb2Br9Quantum dot and gold are respectively placed in different evaporation sources, and the Cs is coated by boron nitride3Sb2Br9The evaporation rate of the quantum dots is 0.1 Å/s, the evaporation time is 500s, the evaporation rate of the gold is 2 Å/s, the evaporation time is 500s, and the gold electrode doped with the fluorescent material is generated.
Step 27, P3 processing: and carrying out third parallel etching at 200nm on the right side of the P2 by a physical scribing method to form a 100-micron spacer exposing the FTO, marking as a P3 scribing line, and finally manufacturing the perovskite solar cell.
The above description is only for the purpose of illustrating the preferred embodiments of the present invention and is not to be construed as limiting the invention, and any modifications, equivalents and improvements made within the spirit and principle of the present invention are intended to be included within the scope of the present invention.

Claims (9)

1. The back electrode containing the fluorescent material is characterized in that the preparation material comprises a metal material and the fluorescent material, the metal material and the fluorescent material are mutually doped in a co-evaporation mode, the fluorescent material doped in the back electrode accounts for 0.05-10 wt% of the metal material, the metal material comprises any one of silver, gold, copper and aluminum, the fluorescent material comprises fluorescent dye or fluorescent quantum dots, the fluorescent dye comprises an organic fluorescent material, and the fluorescent quantum dots are perovskite quantum dots with a core-shell structure.
2. The back electrode containing a fluorescent material as claimed in claim 1, wherein the organic fluorescent material comprises any one of oxadiazole and its derivatives, triazole and its derivatives, rhodamine and its derivatives, coumarin derivatives, 1, 8-naphthalimide derivatives, pyrazoline derivatives, triphenylamine derivatives, porphyrin compounds, carbazole, pyrazine, thiazole derivatives, and perylene derivatives; the fluorescent quantum dots comprise perovskite quantum dot materials coated by silicon dioxide or boron nitride, and the perovskite quantum dot materials comprise MAPbX3、FAPbX3、CsPbX3、CsSnX3、MA3Bi2X9、Cs3Sb2X9、Cs2AgSbX6、Cs3Bi2X9Any one of them, wherein X is Cl-、Br-Or I-。
3. The back electrode containing fluorescent material of claim 1, wherein when the metal material and the fluorescent material are co-evaporated, the evaporation rate of the metal material is 1 Å/s-10 Å/s, the evaporation rate of the fluorescent material is 0.1 Å/s-3 Å/s, and the final doped fluorescent material accounts for 0.05wt% to 10wt% of the metal material.
4. The method for preparing a back electrode containing a fluorescent material as claimed in claim 1 or 2, comprising the steps of putting the metal material and the fluorescent material as different evaporation sources into an evaporation apparatus for evaporation, controlling the evaporation rate of the metal material to be 1 Å/s-10 Å/s and the evaporation rate of the fluorescent material to be 0.1 Å/s-3 Å/s, and finally obtaining the back electrode containing the fluorescent material.
5. A perovskite solar cell, characterized in that the internal structure thereof comprises a first carrier transport layer, a perovskite light absorption layer, a second carrier transport layer and a back electrode, wherein the back electrode employs the back electrode containing a fluorescent material as claimed in any one of claims 1 to 3.
6. A perovskite solar cell, wherein the internal structure thereof comprises a first carrier transport layer, a perovskite light absorption layer, a second carrier transport layer and a back electrode, wherein the back electrode is prepared by the method for preparing a back electrode containing a fluorescent material according to claim 4.
7. A method of manufacturing a perovskite solar cell as claimed in claim 5 or 6, comprising the steps of:
step one, carrying out P1 scribing on a substrate containing a conductive layer, and cutting and partitioning the conductive layer;
step two, sequentially preparing a first carrier transmission layer and a perovskite light absorption layer on the conducting layer, and carrying out P2 scribing to expose the conducting layer;
and step three, preparing a back electrode containing a fluorescent material on the perovskite light absorption layer, carrying out P3 scribing on the back electrode to expose the conductive layer, and finally preparing the perovskite solar cell.
8. The method of fabricating the perovskite solar cell as claimed in claim 7, comprising the steps of:
step 11, P1 processing: carrying out laser etching on the ITO conductive glass substrate, etching to remove ITO with the width of 50 microns, marking as P1 scribing, cleaning the glass substrate, drying the glass substrate by blowing nitrogen, and carrying out ultraviolet ozone treatment;
step 12, preparing a first carrier transport layer: depositing a hole transport material NiOx with the thickness of 20nm on the substrate as a first carrier transport layer;
step 13, preparing a perovskite light absorption layer, namely continuously coating a prepared perovskite precursor solution in a slit, wherein the amount of methylamine hydroiodide and lead iodide is equal, dissolving the solution in a mixed solvent of N, N-dimethylformamide and dimethyl sulfoxide with a volume ratio of 4:1, wherein the concentration of lead iodide is 0.7 mol/L, and annealing at 100 ℃ for 10min to prepare the perovskite light absorption layer with the thickness of 500 nm;
step 14, P2 processing: performing second parallel etching at 200nm on the right side of P1 by laser etching to form a 100-micron spacer exposed out of the ITO and marked as a P2 scribing line;
step 15, preparing a second carrier transport layer: spin-coating PC71BM manufacturing an electron transport layer with the thickness of 30nm as a second carrier transport layer;
step 16, preparing a back electrode containing the fluorescent material, namely respectively placing rhodamine and silver in different evaporation sources, wherein the evaporation rate of the rhodamine is 0.1 Å/s, the evaporation time is 750s, the evaporation rate of the silver is 2 Å/s, the evaporation time is 750s, and the fluorescent material-doped silver electrode is generated after co-evaporation;
step 17, P3 processing: and carrying out third parallel etching at 200nm on the right side of the P2 by a physical scribing method to form a 100-micron spacer exposing the ITO, marking as a P3 scribing line, and finally manufacturing the perovskite solar cell.
9. The method of fabricating the perovskite solar cell as claimed in claim 7, comprising the steps of:
step 21, P1 processing: carrying out laser etching on the FTO conductive glass substrate, etching to remove FTO with the width of 50 microns, marking as P1 marking, cleaning the glass substrate, drying the glass substrate by blowing nitrogen, and carrying out ultraviolet ozone treatment;
step 22, preparing a first carrier transport layer: deposition of an electron transport material TiO on a substrate2A compact layer with the thickness of 20nm and a mesoporous layer with the thickness of 100nm are sequentially used as a first carrier transmission layer;
step 23, preparing a perovskite light absorption layer: heating the substrate to 60 ℃ in a nitrogen atmosphere by using roll-to-roll technology, and preparing the prepared perovskite precursor solution Cs under the assistance of hot air0.15FA0.85PbI3Coating the solution on a substrate, wherein the concentration of the solution is 1 mol/L, the solvent is 1, 4-butyrolactone and a small amount of N-methylpyrrolidone, then quickly immersing the substrate into a chlorobenzene solution, and annealing the substrate at 100 ℃ for 30min to prepare a 600nm thick perovskite light absorption layer;
step 24, P2 processing: performing second parallel etching at 300nm on the right side of the P1 by laser etching to form a 150-micron spacer exposed out of the FTO, and marking as a P2 scribing line;
step 25, preparing a second carrier transport layer: PSS is taken as a second carrier transport layer;
step 26, preparing a back electrode containing a fluorescent material: cs coated with boron nitride3Sb2Br9Quantum dot and gold are respectively placed in different evaporation sources, and the Cs is coated by boron nitride3Sb2Br9The evaporation rate of the quantum dots is 0.1 Å/s, the evaporation time is 500s, the evaporation rate of the gold is 2 Å/s, the evaporation time is 500s, and a gold electrode doped with a fluorescent material is generated;
step 27, P3 processing: and carrying out third parallel etching at 200nm on the right side of the P2 by a physical scribing method to form a 100-micron spacer exposing the FTO, marking as a P3 scribing line, and finally manufacturing the perovskite solar cell.
CN202010593745.9A 2020-06-28 2020-06-28 Back electrode containing fluorescent material, perovskite solar cell and preparation method of back electrode Pending CN111477750A (en)

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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2023123388A1 (en) * 2021-12-31 2023-07-06 宁德时代新能源科技股份有限公司 Perovskite radiovoltaic-photovoltaic cell

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103378182A (en) * 2012-04-25 2013-10-30 新日光能源科技股份有限公司 Light wave conversion layer and solar cell with same
CN105047825A (en) * 2015-08-07 2015-11-11 常州大学 Organic/inorganic perovskite battery and preparation method thereof
CN106252460A (en) * 2016-08-15 2016-12-21 常州大学 The manufacture method of a kind of large area perovskite solaode and system
CN107768524A (en) * 2017-12-04 2018-03-06 湖南师范大学 A kind of perovskite solar cell of efficient stable and preparation method thereof
US20200135950A1 (en) * 2018-10-24 2020-04-30 The Florida State University Research Foundation, Inc. Photovoltaic Devices and Methods

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103378182A (en) * 2012-04-25 2013-10-30 新日光能源科技股份有限公司 Light wave conversion layer and solar cell with same
CN105047825A (en) * 2015-08-07 2015-11-11 常州大学 Organic/inorganic perovskite battery and preparation method thereof
CN106252460A (en) * 2016-08-15 2016-12-21 常州大学 The manufacture method of a kind of large area perovskite solaode and system
CN107768524A (en) * 2017-12-04 2018-03-06 湖南师范大学 A kind of perovskite solar cell of efficient stable and preparation method thereof
US20200135950A1 (en) * 2018-10-24 2020-04-30 The Florida State University Research Foundation, Inc. Photovoltaic Devices and Methods

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2023123388A1 (en) * 2021-12-31 2023-07-06 宁德时代新能源科技股份有限公司 Perovskite radiovoltaic-photovoltaic cell

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