CN106252460A - The manufacture method of a kind of large area perovskite solaode and system - Google Patents
The manufacture method of a kind of large area perovskite solaode and system Download PDFInfo
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- CN106252460A CN106252460A CN201610667379.0A CN201610667379A CN106252460A CN 106252460 A CN106252460 A CN 106252460A CN 201610667379 A CN201610667379 A CN 201610667379A CN 106252460 A CN106252460 A CN 106252460A
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- vaporization chamber
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- large area
- perovskite
- area perovskite
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- 238000000034 method Methods 0.000 title claims abstract description 27
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 22
- 238000009834 vaporization Methods 0.000 claims abstract description 51
- 230000008016 vaporization Effects 0.000 claims abstract description 51
- BAVYZALUXZFZLV-UHFFFAOYSA-N Methylamine Chemical compound NC BAVYZALUXZFZLV-UHFFFAOYSA-N 0.000 claims abstract description 36
- XMBWDFGMSWQBCA-UHFFFAOYSA-N hydrogen iodide Chemical compound I XMBWDFGMSWQBCA-UHFFFAOYSA-N 0.000 claims abstract description 23
- HWSZZLVAJGOAAY-UHFFFAOYSA-L lead(II) chloride Chemical compound Cl[Pb]Cl HWSZZLVAJGOAAY-UHFFFAOYSA-L 0.000 claims abstract description 22
- 239000010409 thin film Substances 0.000 claims abstract description 21
- 230000005540 biological transmission Effects 0.000 claims abstract description 16
- 238000002360 preparation method Methods 0.000 claims abstract description 16
- 229910052751 metal Inorganic materials 0.000 claims abstract description 12
- 239000002184 metal Substances 0.000 claims abstract description 12
- 230000027756 respiratory electron transport chain Effects 0.000 claims abstract description 11
- 239000011521 glass Substances 0.000 claims abstract description 5
- 239000000758 substrate Substances 0.000 claims description 21
- 238000000859 sublimation Methods 0.000 claims description 20
- 230000008022 sublimation Effects 0.000 claims description 20
- PNDPGZBMCMUPRI-UHFFFAOYSA-N iodine Chemical compound II PNDPGZBMCMUPRI-UHFFFAOYSA-N 0.000 claims description 14
- 229910001220 stainless steel Inorganic materials 0.000 claims description 11
- 239000010935 stainless steel Substances 0.000 claims description 11
- 239000000463 material Substances 0.000 claims description 10
- 229910052756 noble gas Inorganic materials 0.000 claims description 10
- 239000007921 spray Substances 0.000 claims description 9
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical group [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 claims description 8
- 238000001704 evaporation Methods 0.000 claims description 8
- 230000008020 evaporation Effects 0.000 claims description 8
- 238000007641 inkjet printing Methods 0.000 claims description 7
- 239000002105 nanoparticle Substances 0.000 claims description 6
- 229910000480 nickel oxide Inorganic materials 0.000 claims description 6
- GNRSAWUEBMWBQH-UHFFFAOYSA-N oxonickel Chemical compound [Ni]=O GNRSAWUEBMWBQH-UHFFFAOYSA-N 0.000 claims description 6
- MCEWYIDBDVPMES-UHFFFAOYSA-N [60]pcbm Chemical compound C123C(C4=C5C6=C7C8=C9C%10=C%11C%12=C%13C%14=C%15C%16=C%17C%18=C(C=%19C=%20C%18=C%18C%16=C%13C%13=C%11C9=C9C7=C(C=%20C9=C%13%18)C(C7=%19)=C96)C6=C%11C%17=C%15C%13=C%15C%14=C%12C%12=C%10C%10=C85)=C9C7=C6C2=C%11C%13=C2C%15=C%12C%10=C4C23C1(CCCC(=O)OC)C1=CC=CC=C1 MCEWYIDBDVPMES-UHFFFAOYSA-N 0.000 claims description 4
- 238000000576 coating method Methods 0.000 claims description 4
- 229910052710 silicon Inorganic materials 0.000 claims description 4
- 239000010703 silicon Substances 0.000 claims description 4
- 239000011787 zinc oxide Substances 0.000 claims description 4
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 claims description 3
- 239000011248 coating agent Substances 0.000 claims description 3
- 238000004544 sputter deposition Methods 0.000 claims description 3
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 claims description 3
- 238000002347 injection Methods 0.000 claims description 2
- 239000007924 injection Substances 0.000 claims description 2
- 238000006748 scratching Methods 0.000 claims 1
- 230000002393 scratching effect Effects 0.000 claims 1
- ZCYVEMRRCGMTRW-UHFFFAOYSA-N 7553-56-2 Chemical compound [I] ZCYVEMRRCGMTRW-UHFFFAOYSA-N 0.000 abstract description 5
- 229910052740 iodine Inorganic materials 0.000 abstract description 5
- 239000011630 iodine Substances 0.000 abstract description 5
- 238000005507 spraying Methods 0.000 abstract description 3
- 238000006243 chemical reaction Methods 0.000 abstract description 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 6
- 230000015572 biosynthetic process Effects 0.000 description 3
- 238000004821 distillation Methods 0.000 description 3
- 229910052757 nitrogen Inorganic materials 0.000 description 3
- 239000000843 powder Substances 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 description 2
- -1 and sputter Substances 0.000 description 2
- 239000000460 chlorine Substances 0.000 description 2
- 229910052801 chlorine Inorganic materials 0.000 description 2
- 239000007789 gas Substances 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 150000001412 amines Chemical class 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 238000005660 chlorination reaction Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- DRHWBADNSVQEGH-UHFFFAOYSA-L diiodyloxylead Chemical compound O=I(=O)O[Pb]OI(=O)=O DRHWBADNSVQEGH-UHFFFAOYSA-L 0.000 description 1
- 239000007772 electrode material Substances 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 238000001755 magnetron sputter deposition Methods 0.000 description 1
- 238000010422 painting Methods 0.000 description 1
- 238000004528 spin coating Methods 0.000 description 1
- 230000006641 stabilisation Effects 0.000 description 1
- 238000011105 stabilization Methods 0.000 description 1
- 238000002207 thermal evaporation Methods 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/549—Organic PV cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
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- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Manufacturing & Machinery (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Photovoltaic Devices (AREA)
Abstract
The present invention provides the manufacture method of a kind of large area perovskite solaode, first laser scribing on FTO glass, prepare hole transmission layer afterwards, then preparing lead iodide or lead chloride at the first vaporization chamber, then prepare methyl amine iodine at the second vaporization chamber, reaction forms perovskite thin film, last spraying process prepares electron transfer layer, laser scribing P2 afterwards, finally prepares metal electrode, and laser scribing P3 forms large area perovskite assembly.The present invention also provides for the manufacturing system of a kind of large area perovskite solaode, including Sample Room, the first vaporization chamber, the second vaporization chamber, hole transmission layer preparation room, metal electrode preparation room etc..Large-area uniformity and the preparation speed of perovskite solaode can be substantially increased.
Description
[technical field]
The present invention relates to technical field of solar batteries, particularly to the preparation method of a kind of large area perovskite solaode
And system.
[background technology]
Perovskite solaode development very fast, prepared from 2012 first block solid-state perovskite solaode it
After, efficiency 9.7%, efficiency rises very fast, and up to now, little area perovskite solar battery efficiency reaches 21%, but
It is that these high-efficiency batteries are all prepared with spin-coating method, does not possess the potential of large area industrialization.2014, Oxford University developed
Use thermal evaporation method prepares perovskite solaode, and efficiency reaches 15%, this method is applicable to industrialization, but depends on
The problem so having large-area uniformity.
Therefore, it is necessary to provide the technical scheme of a kind of improvement to overcome the problems referred to above.
[summary of the invention]
It is an object of the invention to provide preparation method and the system of a kind of large area perovskite solaode, it can be prepared
Go out uniform large-area solaode.
In order to solve the problems referred to above, according to an aspect of the present invention, the present invention provides a kind of large area perovskite sun
The preparation method of energy battery, comprising: provide the substrate with first surface and second surface；First surface at described substrate
Upper laser scribing also coats nickel oxide formation hole transmission layer；By lead iodide or chlorine on the outer surface of described hole transmission layer
Change lead and form perovskite thin film with methyl amine Iod R；The outer surface of described perovskite thin film sprays nano-particle, is formed
Electron transfer layer；Laser scribing on the outer surface of described electron transfer layer, forms solaode precast body；At the described sun
Metal electrode can be prepared on battery precast body, form solaode parent；To described solaode parent laser scribing, shape
Become large area perovskite solaode；Encapsulate described large area perovskite solaode.
As a preferred embodiment of the present invention, the material of described substrate is FTO glass, the material of described nano-particle
Material is zinc oxide, titanium oxide or PCBM, and the material of described metal electrode is golden or silver-colored.
As a preferred embodiment of the present invention, described painting method is for sputtering, spray, scratch or ink-jet being beaten
Print, described injection method is blade coating, sprays or inkjet printing, and three described laser scribing respectively is P1, P2 and P3.
As a preferred embodiment of the present invention, the thickness of described hole transmission layer is 70nm ~ 80nm.
As a preferred embodiment of the present invention, described by lead iodide or lead chloride and the formation of methyl amine Iod R
Perovskite thin film specifically includes:
At room temperature prepare lead iodide or lead chloride, by noble gas, lead iodide steam or lead chloride steam are entrained into
Enter vaporization chamber and be sprayed on substrate so that it is thickness is 200nm,
By described silicon to 150 degree Celsius, and be heated to the methyl amine Iod R of 150-170 degree Celsius, until shape
Become perovskite thin film.
As a preferred embodiment of the present invention, described by lead iodide or lead chloride and the formation of methyl amine Iod R
Perovskite thin film specifically includes: first evaporation lead iodide or lead chloride, rear evaporation methyl amine iodine, repeatedly said process 5-10 time,
Control gross thickness is 200nm, completes to make perovskite thin film.
According to another aspect of the present invention, the present invention provides the making system of a kind of large area perovskite solaode
System, including hole transmission layer preparation room, Sample Room, the first vaporization chamber, the second vaporization chamber and metal electrode preparation room, described in enter
Specimen chamber connects with described first vaporization chamber, described first vaporization chamber and the connection of the second vaporization chamber, described Sample Room and described first
Be provided with the first transfer gate between vaporization chamber, between described first vaporization chamber and the second vaporization chamber, be provided with the second transfer gate, described in enter
Specimen chamber is communicated with the first vacuum pump group, and described first vaporization chamber is communicated with the second vacuum pump group, and described second vaporization chamber is communicated with
3rd vacuum pump group.
As a preferred embodiment of the present invention, be provided with in described first vaporization chamber fluffy head, sublimation tank, for liter
The vacuum pump of China's tank evacuation and noble gas input equipment, described fluffy head has multiple cavernous structure, adjacent two described holes
The spacing of shape structure is 1cm, and the aperture of described cavernous structure is 200-500um, and described fluffy head is connected with sublimation tank, described liter
The bottom of China's tank is provided with a height of 0.5cm, the cylindrical bump of a diameter of 0.5cm, and described sublimation tank connects vacuum pump, described inertia
Gas input device connects described sublimation tank.
As a preferred embodiment of the present invention, in described second vaporization chamber, it is provided with stainless steel disc and heater, institute
State stainless steel disc to be positioned on described heater.
Compared with prior art, the manufacture method of a kind of large area perovskite solaode and making system in the present invention
System, substantially increases large-area uniformity and the preparation speed of perovskite solaode.
[accompanying drawing explanation]
In order to be illustrated more clearly that the technical scheme of the embodiment of the present invention, in describing embodiment below, required use is attached
Figure is briefly described, it should be apparent that, the accompanying drawing in describing below is only some embodiments of the present invention, for this area
From the point of view of those of ordinary skill, on the premise of not paying creative work, it is also possible to obtain the attached of other according to these accompanying drawings
Figure.Wherein:
Fig. 1 is the manufacture method flow chart in one embodiment of the large area perovskite solaode in the present invention；
Fig. 2 is the manufacturing system structural representation in one embodiment of the large area perovskite solaode in the present invention
Figure.
[detailed description of the invention]
Understandable for enabling the above-mentioned purpose of the present invention, feature and advantage to become apparent from, below in conjunction with the accompanying drawings and specific embodiment party
The present invention is further detailed explanation for formula.
" embodiment " or " embodiment " referred to herein refers to may be included at least one implementation of the present invention
Special characteristic, structure or characteristic.Different in this manual local " in one embodiment " occurred not refer both to same
Individual embodiment, is not single or the most mutually exclusive with other embodiments embodiment.
Refer to manufacture method 100 that Fig. 1, Fig. 1 are large area perovskite solaode in the present invention a reality
Execute the flow chart in example.As it is shown in figure 1, described manufacture method 100 comprises the steps.
Step 110, it is provided that there is the substrate of first surface and second surface.
Concrete, the material of described substrate is FTO glass.
Step 120, on the first surface of described substrate laser scribing and coat nickel oxide formed hole transmission layer.
Concrete, laser scribing P1 on the first surface of described substrate, and sputter, spray, scratch or inkjet printing
Nickel oxide, forms the hole transmission layer that thickness is 70nm ~ 80nm.
Step 130, by lead iodide or lead chloride and methyl amine Iod R shape on the outer surface of described hole transmission layer
Become perovskite thin film.
In one embodiment, at room temperature prepare lead iodide or lead chloride, by noble gas such as nitrogen or argon
Lead iodide steam or lead chloride steam are carried along into vaporization chamber and are sprayed on substrate by gas, make formed iodate lead layer or
Chlorination lead layer is 200nm with the gross thickness of substrate；By described silicon to 150 degree Celsius, and take the photograph with being heated to 150-170
The methyl amine Iod R of family name's degree, until forming perovskite thin film.
In another embodiment: first evaporation lead iodide or lead chloride, rear evaporation methyl amine iodine, above-mentioned two is steamed repeatedly
The process of sending out 5-10 time, to improve the uniformity of thin film, controlling its gross thickness all the time is 200nm, completes to make perovskite thin film.
Step 140, sprays nano-particle on the outer surface of described perovskite thin film, forms electron transfer layer.
Concrete, the outer surface of described perovskite thin film scratches, spray or inkjet printing zinc oxide, titanium oxide or
The nano-particle of person PCBM, forms electron transfer layer.
Step 150, laser scribing on the outer surface of described electron transfer layer, form solaode precast body.
Concrete, laser scribing P2 on the outer surface of described electron transfer layer, form solaode precast body.
Step 160, prepares metal electrode on described solaode precast body, forms solaode parent.
Concrete, described solaode precast body utilizes gold or silvery for metal electrode, form solar-electricity
Pond parent.
Step 170, to described solaode parent laser scribing, forms large area perovskite solaode.
Concrete, to described solaode parent laser scribing P3, form large area perovskite solaode.
Step 180, encapsulates described large area perovskite solaode.
The present invention also provide for above-mentioned manufacture method with the use of the making of a kind of large area perovskite solaode
System.
Refer to manufacturing system that Fig. 2, Fig. 2 are large area perovskite solaode in the present invention an embodiment
In structural representation.As in figure 2 it is shown, the manufacturing system of described large area perovskite solaode, used equipment be
Wire type or cluster formula structure, including hole transmission layer preparation room 4, Sample Room the 1, first vaporization chamber the 2, second vaporization chamber 3 and
Metal electrode preparation room 5, described Sample Room 1 connects with described first vaporization chamber 2, described first vaporization chamber 2 and the second vaporization chamber 3
Connection, is provided with the first transfer gate 6 between described Sample Room 1 and described first vaporization chamber 2, described first vaporization chamber 2 and second steams
Sending out and be provided with the second transfer gate 7 between room 3, described Sample Room 1 is communicated with the first vacuum pump group 8, and described first vaporization chamber 2 is communicated with
Second vacuum pump group 9, described second vaporization chamber 3 is communicated with the 3rd vacuum pump group 10.
Be provided with in described first vaporization chamber 2 fluffy 21, sublimation tank 22, for the vacuum pump of sublimation tank 22 evacuation (not
Diagram) and noble gas input equipment 23, described fluffy 21 has multiple cavernous structure, between adjacent two described cavernous structures
Away from for 1cm, the aperture of described cavernous structure is 200-500um, and described fluffy 21 spacing to substrate is 3-5cm, described fluffy head
21 are connected with sublimation tank 22, and the bottom of described sublimation tank 22 is provided with a height of 0.5cm, the cylindrical bump of a diameter of 0.5cm, use
To improve the efficiency of heating surface.Described sublimation tank 22 connects vacuum pump, and described noble gas input equipment 23 connects described sublimation tank 22,
Described noble gas input equipment 23 includes that MFC(is not shown) and pressure controller (not shown).By sublimation tank 22 evacuation it
After, it is heated to 300-800 degree Celsius so that lead iodide or lead chloride distillation, argon or nitrogen are by MFC and Stress control
Device controls, and enters sublimation tank 22, carries lead iodide steam or lead chloride steam enters chamber, by dry pump (not shown) and butterfly
Valve (not shown) controls the pressure in chamber, and pressure, in the range of 1-10torr, is sprayed onto on substrate by fluffy 21 and prepares
Lead iodide or lead chloride.
Be provided with stainless steel disc 31 and heater 32 in described second vaporization chamber 3, described stainless steel disc 31 be positioned over described in add
On hot device 32.In one embodiment, using a square stainless steel disc 31, methyl amine iodine powder is laid in stainless steel disc 31
On, stainless steel disc 31 is positioned on panel heater 32, stainless steel disc 31 is apart from substrate 1-3cm.When preparing methyl amine iodine,
Second vaporization chamber 3 first passes through the 3rd vacuum pump group 10 evacuation, and described second vaporization chamber 3 pressure is less than 1E-7torr, closes
Molecular pump (not shown), post-heating substrate, when equitemperature is stablized, heat stainless steel disc 31 to 150 degrees Celsius so that methyl amine
Iodine volatilizees, by controlling the time, until perovskite thin film is formed.
Manufacture method and system introduction one below in conjunction with a kind of large area perovskite solaode can abundant bodies
The embodiment of existing present invention:
Embodiment one
1, FTO(30*60cm) glass is by laser (1024 HONGGUANG) line P1, and distance between centers of tracks is 1cm, afterwards in hole transmission layer system
Hole transmission layer is prepared by magnetron sputtering in standby room 4.The material of hole transmission layer is nickel oxide, and the method for preparation is sputtering, scrapes
It is coated with or spraying, or inkjet printing, the thickness of prepared nickel oxide is 70-80nm.
2, sample enters Sample Room 1 afterwards, and described Sample Room 1 and the first vaporization chamber 2 are evacuated down to 1E-7torr simultaneously, enter
The first transfer gate 6 between specimen chamber 1 and the first vaporization chamber 2 is opened, and sample enters the first vaporization chamber 2, and the first transfer gate 6 is closed,
Baffle plate (not shown) on substrate is closed.
3, sublimation tank 22 puts into lead iodide or lead chloride powder, evacuation, is heated to 310 degree, waits lead iodide or chlorine
Changing lead distillation, the noble gas of certain flow such as nitrogen is passed through sublimation tank 22 and carries lead iodide steam or lead chloride steam enters
Enter fluffy 21, sprayed by multiple cavernous structures of fluffy 21, at this moment open dry pump (not shown) and butterfly valve (not shown), control
Chamber pressure 1-5torr, after pressure is stable, opens baffle plate, until it is 250nm that lead iodide grows into thickness.
4, close dry pump and butterfly valve, open molecular pump group (not shown), evacuation, simultaneously the second vaporization chamber 3 also evacuation,
Treating that the first vaporization chamber 2 and the second vaporization chamber 3 all arrive 1E-5torr, the second transfer gate 7 is opened, and sample enters the second vaporization chamber 3.
5, close molecular pump group, silicon to 150 degree, treat temperature stabilization, heat methyl amine iodine powder to 150 degree, first
The lead chloride reaction of the distillation of base amine iodine and substrate generates perovskite thin film.Take out substrate.
6, preparing electron transfer layer: the material of electron transfer layer is zinc oxide or PCBM, the method used is spraying,
Blade coating, or inkjet printing, laser grooving and scribing P2 afterwards.
7, the sample prepared is put into metal electrode preparation room 5, use electrode evaporation equipment evaporation electrode, electrode material
Select silver-colored or golden, laser grooving and scribing P3 afterwards.
8, cell package.
Those of ordinary skill in art it should be appreciated that, one of the feature of the present invention or purpose are:
Substantially increase large-area uniformity and the preparation speed of perovskite solaode.
It is pointed out that any change that the detailed description of the invention of the present invention is done by one skilled in the art
Scope all without departing from claims of the present invention.Correspondingly, the scope of the claim of the present invention is the most not merely limited to
In previous embodiment.
Claims (9)
1. the manufacture method of a large area perovskite solaode, it is characterised in that including:
The substrate with first surface and second surface is provided；
On the first surface of described substrate laser scribing and coat nickel oxide formed hole transmission layer；
The outer surface of described hole transmission layer forms perovskite thin film by lead iodide or lead chloride with methyl amine Iod R；
The outer surface of described perovskite thin film sprays nano-particle, forms electron transfer layer；
Laser scribing on the outer surface of described electron transfer layer, forms solaode precast body；
Described solaode precast body is prepared metal electrode, forms solaode parent；
To described solaode parent laser scribing, form large area perovskite solaode；
Encapsulate described large area perovskite solaode.
The manufacture method of large area perovskite solaode the most according to claim 1, it is characterised in that described substrate
Material be FTO glass, the material of described nano-particle is zinc oxide, titanium oxide or PCBM, the material of described metal electrode
For golden or silver-colored.
The manufacture method of large area perovskite solaode the most according to claim 1, it is characterised in that described coating
Method is for sputtering, spray, scratching or inkjet printing, and described injection method is blade coating, sprays or inkjet printing, described in three times
Laser scribing respectively is P1, P2 and P3.
The manufacture method of large area perovskite solaode the most according to claim 1, it is characterised in that described hole
The thickness of transport layer is 70nm ~ 80nm.
The manufacture method of large area perovskite solaode the most according to claim 1, it is characterised in that described in pass through
Lead iodide or lead chloride form perovskite thin film with methyl amine Iod R and specifically include:
At room temperature prepare lead iodide or lead chloride, by noble gas, lead iodide steam or lead chloride steam are entrained into
Enter vaporization chamber and be sprayed on substrate so that it is thickness is 200nm,
By described silicon to 150 degree Celsius, and be heated to the methyl amine Iod R of 150-170 degree Celsius, until shape
Become perovskite thin film.
The manufacture method of large area perovskite solaode the most according to claim 1, it is characterised in that described in pass through
Lead iodide or lead chloride form perovskite thin film with methyl amine Iod R and specifically include: first evaporation lead iodide or lead chloride, after
Evaporation methyl amine iodine, repeatedly said process 5-10 time, control gross thickness is 200nm, completes to make perovskite thin film.
7. the manufacturing system of a large area perovskite solaode, it is characterised in that including: hole transmission layer preparation room,
Sample Room, the first vaporization chamber, the second vaporization chamber and metal electrode preparation room, described Sample Room connects with described first vaporization chamber,
Described first vaporization chamber and the connection of the second vaporization chamber, be provided with the first transfer gate between described Sample Room and described first vaporization chamber,
Being provided with the second transfer gate between described first vaporization chamber and the second vaporization chamber, described Sample Room is communicated with the first vacuum pump group, institute
Stating the first vaporization chamber and be communicated with the second vacuum pump group, described second vaporization chamber is communicated with the 3rd vacuum pump group.
The manufacturing system of large area perovskite solaode the most according to claim 7, it is characterised in that described first
Be provided with in vaporization chamber fluffy head, sublimation tank, for the vacuum pump of sublimation tank evacuation and noble gas input equipment, described fluffy head
Having multiple cavernous structure, the spacing of adjacent two described cavernous structures is 1cm, and the aperture of described cavernous structure is 200-
500um, described fluffy head is connected with sublimation tank, and the bottom of described sublimation tank is provided with a height of 0.5cm, the cylinder of a diameter of 0.5cm
Shape is protruding, and described sublimation tank connects vacuum pump, and described noble gas input equipment connects described sublimation tank.
The manufacturing system of large area perovskite solaode the most according to claim 7, it is characterised in that described second
Being provided with stainless steel disc and heater in vaporization chamber, described stainless steel disc is positioned on described heater.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610667379.0A CN106252460B (en) | 2016-08-15 | 2016-08-15 | A kind of production method and system of large area perovskite solar cell |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610667379.0A CN106252460B (en) | 2016-08-15 | 2016-08-15 | A kind of production method and system of large area perovskite solar cell |
Publications (2)
| Publication Number | Publication Date |
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| CN106252460A true CN106252460A (en) | 2016-12-21 |
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| CN108493340A (en) * | 2018-03-27 | 2018-09-04 | 武汉理工大学 | A kind of method that steam auxiliary prepares perovskite solar cell |
| CN109638161A (en) * | 2018-12-04 | 2019-04-16 | 储天新能源科技（长春）有限公司 | A kind of preparation method and perovskite solar battery of efficient perovskite solar battery |
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| CN110047998A (en) * | 2018-01-17 | 2019-07-23 | 杭州纤纳光电科技有限公司 | A kind of immersion prepares the equipment and application method of perovskite solar battery |
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| CN111244279A (en) * | 2018-11-29 | 2020-06-05 | 中国科学院大连化学物理研究所 | Reel-to-reel vacuum deposition system and preparation method for flexible perovskite solar cell |
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| CN111403436A (en) * | 2020-03-16 | 2020-07-10 | 武汉理工大学 | Perovskite solar cell and O L ED integrated device and preparation method |
| CN111477750A (en) * | 2020-06-28 | 2020-07-31 | 杭州纤纳光电科技有限公司 | Back electrode containing fluorescent material, perovskite solar cell and preparation method of back electrode |
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| CN108389975A (en) * | 2018-04-10 | 2018-08-10 | 常州大学 | A kind of preparation method of perovskite solar module |
| WO2020018626A1 (en) * | 2018-07-18 | 2020-01-23 | Massachusetts Institute Of Technology | Alternating multi-source vapor transport deposition |
| US11629405B2 (en) | 2018-07-18 | 2023-04-18 | Massachusetts Institute Of Technology | Alternating multi-source vapor transport deposition |
| CN111244279A (en) * | 2018-11-29 | 2020-06-05 | 中国科学院大连化学物理研究所 | Reel-to-reel vacuum deposition system and preparation method for flexible perovskite solar cell |
| CN109638161A (en) * | 2018-12-04 | 2019-04-16 | 储天新能源科技（长春）有限公司 | A kind of preparation method and perovskite solar battery of efficient perovskite solar battery |
| CN113785408A (en) * | 2019-06-03 | 2021-12-10 | 马卡罗有限公司 | Preparation method of perovskite solar cell absorption layer based on chemical vapor deposition method |
| CN111403604A (en) * | 2020-03-05 | 2020-07-10 | 暨南大学 | Double-hole-transport-layer perovskite solar cell and preparation method thereof |
| CN111403436A (en) * | 2020-03-16 | 2020-07-10 | 武汉理工大学 | Perovskite solar cell and O L ED integrated device and preparation method |
| CN111477750A (en) * | 2020-06-28 | 2020-07-31 | 杭州纤纳光电科技有限公司 | Back electrode containing fluorescent material, perovskite solar cell and preparation method of back electrode |
| CN114242901A (en) * | 2021-11-16 | 2022-03-25 | 清华大学 | Perovskite thin film, preparation method and application |
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