CN106252460B - A kind of production method and system of large area perovskite solar cell - Google Patents
A kind of production method and system of large area perovskite solar cell Download PDFInfo
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- CN106252460B CN106252460B CN201610667379.0A CN201610667379A CN106252460B CN 106252460 B CN106252460 B CN 106252460B CN 201610667379 A CN201610667379 A CN 201610667379A CN 106252460 B CN106252460 B CN 106252460B
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- 238000004519 manufacturing process Methods 0.000 title claims abstract description 17
- 238000009834 vaporization Methods 0.000 claims abstract description 49
- 230000008016 vaporization Effects 0.000 claims abstract description 49
- 238000002360 preparation method Methods 0.000 claims abstract description 14
- 230000005540 biological transmission Effects 0.000 claims abstract description 13
- 229910052751 metal Inorganic materials 0.000 claims abstract description 10
- 239000002184 metal Substances 0.000 claims abstract description 10
- 238000000859 sublimation Methods 0.000 claims description 20
- 230000008022 sublimation Effects 0.000 claims description 20
- 229910001220 stainless steel Inorganic materials 0.000 claims description 11
- 239000010935 stainless steel Substances 0.000 claims description 11
- 239000011261 inert gas Substances 0.000 claims description 9
- 238000001704 evaporation Methods 0.000 claims description 4
- 230000008020 evaporation Effects 0.000 claims description 4
- BAVYZALUXZFZLV-UHFFFAOYSA-N Methylamine Chemical compound NC BAVYZALUXZFZLV-UHFFFAOYSA-N 0.000 abstract description 26
- XMBWDFGMSWQBCA-UHFFFAOYSA-N hydrogen iodide Chemical compound I XMBWDFGMSWQBCA-UHFFFAOYSA-N 0.000 abstract description 15
- HWSZZLVAJGOAAY-UHFFFAOYSA-L lead(II) chloride Chemical compound Cl[Pb]Cl HWSZZLVAJGOAAY-UHFFFAOYSA-L 0.000 abstract description 14
- 239000010409 thin film Substances 0.000 abstract description 14
- 230000027756 respiratory electron transport chain Effects 0.000 abstract description 9
- ZCYVEMRRCGMTRW-UHFFFAOYSA-N 7553-56-2 Chemical compound [I] ZCYVEMRRCGMTRW-UHFFFAOYSA-N 0.000 abstract description 5
- 229910052740 iodine Inorganic materials 0.000 abstract description 5
- 239000011630 iodine Substances 0.000 abstract description 5
- 239000011521 glass Substances 0.000 abstract description 4
- 238000005507 spraying Methods 0.000 abstract description 4
- 238000006243 chemical reaction Methods 0.000 abstract description 2
- 239000000758 substrate Substances 0.000 description 17
- 238000000034 method Methods 0.000 description 11
- PNDPGZBMCMUPRI-UHFFFAOYSA-N iodine Chemical compound II PNDPGZBMCMUPRI-UHFFFAOYSA-N 0.000 description 9
- 239000000463 material Substances 0.000 description 7
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 6
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 6
- 238000007641 inkjet printing Methods 0.000 description 5
- GNRSAWUEBMWBQH-UHFFFAOYSA-N oxonickel Chemical compound [Ni]=O GNRSAWUEBMWBQH-UHFFFAOYSA-N 0.000 description 5
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 4
- 239000011248 coating agent Substances 0.000 description 4
- 238000000576 coating method Methods 0.000 description 4
- 239000002105 nanoparticle Substances 0.000 description 4
- 229910000480 nickel oxide Inorganic materials 0.000 description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- MCEWYIDBDVPMES-UHFFFAOYSA-N [60]pcbm Chemical compound C123C(C4=C5C6=C7C8=C9C%10=C%11C%12=C%13C%14=C%15C%16=C%17C%18=C(C=%19C=%20C%18=C%18C%16=C%13C%13=C%11C9=C9C7=C(C=%20C9=C%13%18)C(C7=%19)=C96)C6=C%11C%17=C%15C%13=C%15C%14=C%12C%12=C%10C%10=C85)=C9C7=C6C2=C%11C%13=C2C%15=C%12C%10=C4C23C1(CCCC(=O)OC)C1=CC=CC=C1 MCEWYIDBDVPMES-UHFFFAOYSA-N 0.000 description 3
- 238000005660 chlorination reaction Methods 0.000 description 3
- DRHWBADNSVQEGH-UHFFFAOYSA-L diiodyloxylead Chemical compound O=I(=O)O[Pb]OI(=O)=O DRHWBADNSVQEGH-UHFFFAOYSA-L 0.000 description 3
- 239000007789 gas Substances 0.000 description 3
- 229910052757 nitrogen Inorganic materials 0.000 description 3
- 239000000843 powder Substances 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- 239000007921 spray Substances 0.000 description 3
- 239000011787 zinc oxide Substances 0.000 description 3
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 description 2
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 2
- 229910052786 argon Inorganic materials 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 239000000460 chlorine Substances 0.000 description 2
- 229910052801 chlorine Inorganic materials 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000004821 distillation Methods 0.000 description 2
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 2
- 229910052737 gold Inorganic materials 0.000 description 2
- 239000010931 gold Substances 0.000 description 2
- 230000000630 rising effect Effects 0.000 description 2
- 239000000243 solution Substances 0.000 description 2
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 description 2
- 150000001412 amines Chemical class 0.000 description 1
- -1 and sputters Substances 0.000 description 1
- 239000007772 electrode material Substances 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000010408 film Substances 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 230000005525 hole transport Effects 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 150000004694 iodide salts Chemical class 0.000 description 1
- 238000001755 magnetron sputter deposition Methods 0.000 description 1
- 238000010422 painting Methods 0.000 description 1
- 238000006748 scratching Methods 0.000 description 1
- 230000002393 scratching effect Effects 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 238000004528 spin coating Methods 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 230000006641 stabilisation Effects 0.000 description 1
- 238000011105 stabilization Methods 0.000 description 1
- 238000002207 thermal evaporation Methods 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/549—Organic PV cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
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- Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Manufacturing & Machinery (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
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Abstract
The present invention provides a kind of production method of large area perovskite solar cell, the laser scribing on FTO glass first, hole transmission layer is prepared later, then lead iodide or lead chloride are prepared in the first vaporization chamber, then prepares methyl amine iodine in the second vaporization chamber, reaction forms perovskite thin film, last spray coating method prepares electron transfer layer, laser scribing P2 later, finally prepares metal electrode, and laser scribing P3 forms large area perovskite component.The present invention also provides a kind of manufacturing system of large area perovskite solar cell, including Sample Room, the first vaporization chamber, the second vaporization chamber, hole transmission layer preparation room, metal electrode preparation rooms etc..The large-area uniformity of perovskite solar cell can be substantially increased and prepare rate.
Description
【Technical field】
The present invention relates to technical field of solar batteries, more particularly to a kind of preparation of large area perovskite solar cell
Method and system.
【Background technology】
The development of perovskite solar cell is very fast, and first block solid-state perovskite solar-electricity was prepared from 2012
After pond, efficiency 9.7%, efficiency rising is very fast, and up to now, small area perovskite solar battery efficiency reaches
21%, but these high-efficiency batteries are prepared with spin-coating method, do not have the potential of large area industrialization.2014, Oxford was big
Develop prepares perovskite solar cell using thermal evaporation method, and efficiency reaches 15%, and this method is suitable for industrialization,
But still there is the problem of large-area uniformity.
Therefore, it is necessary to provide a kind of improved technical solution to overcome the above problem.
【Invention content】
It, can be with the purpose of the present invention is to provide a kind of preparation method and system of large area perovskite solar cell
Prepare the solar cell of uniform large area.
To solve the above-mentioned problems, according to an aspect of the present invention, the present invention provides a kind of large area perovskite sun
The preparation method of energy battery comprising：Substrate with first surface and second surface is provided；In the first surface of the substrate
Upper laser scribing simultaneously coats nickel oxide formation hole transmission layer；Pass through lead iodide or chlorine on the outer surface of the hole transmission layer
Change lead and forms perovskite thin film with methyl amine Iod R；Nano particle is sprayed on the outer surface of the perovskite thin film, is formed
Electron transfer layer；The laser scribing on the outer surface of the electron transfer layer forms solar cell precast body；In the sun
Metal electrode can be prepared on battery precast body, form solar cell parent；To the solar cell parent laser scribing, shape
At large area perovskite solar cell；Encapsulate the large area perovskite solar cell.
As the preferred embodiment of the present invention, the material of the substrate is FTO glass, the material of the nano particle
Material be that the material of zinc oxide, titanium oxide either PCBM metal electrodes be golden or silver-colored.
As the preferred embodiment of the present invention, the painting method is that sputtering, spraying, blade coating or ink-jet are beaten
Print, the injection method are that blade coating, spraying or inkjet printing, the three times laser scribing respectively are P1, P2 and P3.
As the preferred embodiment of the present invention, the thickness of the hole transmission layer is 70nm ~ 80nm.
It is described to be formed with methyl amine Iod R by lead iodide or lead chloride as the preferred embodiment of the present invention
Perovskite thin film specifically includes：
Preparing lead iodide at room temperature, either lead chloride is taken lead iodide steam or lead chloride steam by inert gas
Band enters vaporization chamber and is sprayed on substrate, and it is 200nm to make its thickness,
By the silicon to 150 degrees Celsius, and with the methyl amine Iod R that has been heated to 150-170 degrees Celsius, directly
To formation perovskite thin film.
It is described to be formed with methyl amine Iod R by lead iodide or lead chloride as the preferred embodiment of the present invention
Perovskite thin film specifically includes：Lead iodide or lead chloride are first evaporated, afterwards evaporation methyl amine iodine, above process 5-10 times repeatedly,
Control overall thickness is 200nm, completes the production perovskite thin film.
According to another aspect of the present invention, the present invention provides a kind of making system of large area perovskite solar cell
System, including：Hole transmission layer preparation room, Sample Room, the first vaporization chamber, the second vaporization chamber and metal electrode preparation room, it is described into
Specimen chamber is connected to first vaporization chamber, first vaporization chamber and the connection of the second vaporization chamber, the Sample Room and described first
Between vaporization chamber be equipped with the first transfer gate, between first vaporization chamber and the second vaporization chamber be equipped with the second transfer gate, it is described into
Specimen chamber is communicated with the first vacuum pump group, and first vaporization chamber is communicated with the second vacuum pump group, and second vaporization chamber is communicated with
Third vacuum pump group.
As the preferred embodiment of the present invention, fluffy head, sublimation tank are equipped in first vaporization chamber, for rising
The vacuum pump and inert gas input unit that magnificent tank vacuumizes, the fluffy head have multiple cavernous structures, the two neighboring hole
The spacing of shape structure is 1cm, and the aperture of the cavernous structure is 200-500um, and the fluffy head is connected with sublimation tank, the liter
The bottom of magnificent tank is equipped with the cylindrical bump of a height of 0.5cm, a diameter of 0.5cm, and the sublimation tank connects vacuum pump, the inertia
Gas input device connects the sublimation tank.
As the preferred embodiment of the present invention, stainless steel disc and heater, institute are equipped in second vaporization chamber
Stainless steel disc is stated to be positioned on the heater.
Compared with prior art, it a kind of production method of large area perovskite solar cell and makes in the present invention and is
System substantially increases the large-area uniformity of perovskite solar cell and prepares rate.
【Description of the drawings】
In order to illustrate the technical solution of the embodiments of the present invention more clearly, required use in being described below to embodiment
Attached drawing be briefly described, it should be apparent that, drawings in the following description are only some embodiments of the invention, for this
For the those of ordinary skill of field, without having to pay creative labor, it can also be obtained according to these attached drawings other
Attached drawing.Wherein：
Fig. 1 is the flow of the production method of the large area perovskite solar cell in the present invention in one embodiment
Figure；
Fig. 2 is that the structure of the manufacturing system of the large area perovskite solar cell in the present invention in one embodiment is shown
It is intended to.
【Specific implementation mode】
In order to make the foregoing objectives, features and advantages of the present invention clearer and more comprehensible, below in conjunction with the accompanying drawings and specific real
Applying mode, the present invention is described in further detail.
" one embodiment " or " embodiment " referred to herein refers to that may be included at least one realization method of the present invention
A particular feature, structure, or characteristic." in one embodiment " that different places occur in the present specification not refers both to same
A embodiment, nor the individual or selective embodiment mutually exclusive with other embodiment.
Referring to Fig. 1, Fig. 1 be the present invention in large area perovskite solar cell production method 100 in a reality
Apply the flow chart in example.As shown in Figure 1, the manufacturing method 100 includes the following steps.
Step 110, the substrate with first surface and second surface is provided.
Specifically, the material of the substrate is FTO glass.
Step 120, on the first surface of the substrate laser scribing and coat nickel oxide formed hole transmission layer.
Specifically, laser scribing P1 on the first surface of the substrate, and sputters, sprays, scratching or inkjet printing
Nickel oxide forms the hole transmission layer that thickness is 70nm ~ 80nm.
Step 130, pass through lead iodide or lead chloride and methyl amine Iod R shape on the outer surface of the hole transmission layer
At perovskite thin film.
In one embodiment, preparing lead iodide at room temperature, either lead chloride passes through inert gas such as nitrogen or argon
Gas by lead iodide steam either lead chloride steam be carried along into vaporization chamber and be sprayed on substrate make to be formed by iodate lead layer or
The overall thickness of chlorination lead layer and substrate is 200nm；By the silicon to 150 degrees Celsius, and taken the photograph with 150-170 has been heated to
The methyl amine Iod R of family name's degree, until forming perovskite thin film.
In another embodiment：Lead iodide or lead chloride are first evaporated, rear to evaporate methyl amine iodine, above-mentioned two is steamed repeatedly
Hair process 5-10 times, to improve the uniformity of film, it is 200nm to control its overall thickness always, completes the production perovskite thin film.
Step 140, nano particle is sprayed on the outer surface of the perovskite thin film, forms electron transfer layer.
Specifically, on the outer surface of the perovskite thin film scratch, spray or inkjet printing zinc oxide, titanium oxide or
The nano particle of person PCBM forms electron transfer layer.
Step 150, the laser scribing on the outer surface of the electron transfer layer forms solar cell precast body.
Specifically, the laser scribing P2 on the outer surface of the electron transfer layer, forms solar cell precast body.
Step 160, metal electrode is prepared on the solar cell precast body, forms solar cell parent.
Specifically, forming solar-electricity using gold or silvery for metal electrode on the solar cell precast body
Pond parent.
Step 170, to the solar cell parent laser scribing, large area perovskite solar cell is formed.
Specifically, to the solar cell parent laser scribing P3, large area perovskite solar cell is formed.
Step 180, the large area perovskite solar cell is encapsulated.
The present invention also provides a kind of making for the large area perovskite solar cell being used cooperatively with above-mentioned production method
System.
Referring to Fig. 2, Fig. 2 be the present invention in large area perovskite solar cell manufacturing system in one embodiment
In structural schematic diagram.As shown in Fig. 2, the manufacturing system of the large area perovskite solar cell, used equipment be
Wire type or cluster formula structure, including：Hole transmission layer preparation room 4, Sample Room 1, the first vaporization chamber 2,3 and of the second vaporization chamber
Metal electrode preparation room 5, the Sample Room 1 are connected to first vaporization chamber 2, first vaporization chamber, 2 and second vaporization chamber 3
Connection, is equipped with the first transfer gate 6 between the Sample Room 1 and first vaporization chamber 2, first vaporization chamber 2 and second steams
Hair is equipped with the second transfer gate 7 between room 3, and the Sample Room 1 is communicated with the first vacuum pump group 8, and first vaporization chamber 2 is communicated with
Second vacuum pump group 9, second vaporization chamber 3 are communicated with third vacuum pump group 10.
Fluffy head 21, sublimation tank 22, the vacuum pump for being vacuumized to sublimation tank 22 are equipped in first vaporization chamber 2（Not
Diagram）With inert gas input unit 23, the fluffy head 21 has multiple cavernous structures, between the two neighboring cavernous structure
It is 200-500um away from the aperture for 1cm, the cavernous structure, the spacing of the fluffy head 21 to substrate is 3-5cm, the fluffy head
21 are connected with sublimation tank 22, and the bottom of the sublimation tank 22 is equipped with the cylindrical bump of a height of 0.5cm, a diameter of 0.5cm, use
To improve the efficiency of heating surface.The sublimation tank 22 connects vacuum pump, and the inert gas input unit 23 connects the sublimation tank 22,
The inert gas input unit 23 includes MFC（It is not shown）And pressure controller（It is not shown）.Sublimation tank 22 is vacuumized it
Afterwards, it is heated to 300-800 degrees Celsius so that either lead chloride distillation argon gas or nitrogen are controlled lead iodide by MFC and pressure
Device controls, and into sublimation tank 22, carries iodate lead steam or chlorination lead steam enters chamber, pass through dry pump（It is not shown）And butterfly
Valve（It is not shown）The indoor pressure of control chamber, the ranging from 1-10torr of pressure, is sprayed onto on substrate by fluffy head 21 and is prepared
Lead iodide or lead chloride.
Stainless steel disc 31 and heater 32 are equipped in second vaporization chamber 3, the stainless steel disc 31 is positioned over described add
On hot device 32.In one embodiment, using a rectangular stainless steel disc 31, methyl amine iodine powder is laid in stainless steel disc 31
On, stainless steel disc 31 is positioned on panel heater 32, stainless steel disc 31 is apart from substrate 1-3cm.When preparing methyl amine iodine,
Second vaporization chamber 3 is vacuumized by third vacuum pump group 10 first, and 3 pressure of the second vaporization chamber is less than 1E-7torr, is closed
Molecular pump（It is not shown）, heat substrate later, etc. temperature stablize when, heat 31 to 150 degrees Celsius of stainless steel disc so that methyl amine
Iodine volatilizees, by control time, until perovskite thin film is formed.
It being capable of abundant body with reference to a kind of production method of large area perovskite solar cell and system introduction one
The embodiment of existing the content of present invention：
Embodiment one
1、FTO（30*60cm）Glass is by laser (1024 feux rouges) scribing line P1, and line spacing is 1cm, later in hole transport
Layer preparation room 4 prepares hole transmission layer by magnetron sputtering.The material of hole transmission layer is nickel oxide, and the method for preparation is to splash
It penetrates, blade coating either sprays or inkjet printing, and the thickness of prepared nickel oxide is 70-80nm.
2, sample enters Sample Room 1 later, and the Sample Room 1 and the first vaporization chamber 2 are evacuated down to 1E-7torr simultaneously, into
The first transfer gate 6 between specimen chamber 1 and the first vaporization chamber 2 is opened, and sample enters the first vaporization chamber 2, and the first transfer gate 6 is closed,
Baffle on substrate（It is not shown）It closes.
3, sublimation tank 22 is put into lead iodide or lead chloride powder, vacuumizes, and is heated to 310 degree, waits lead iodides or chlorine
Change lead distillation, the inert gas such as nitrogen of certain flow be passed through sublimation tank 22 and carry iodate lead steam or chlorination lead steam into
Enter fluffy head 21, is sprayed by multiple cavernous structures of fluffy head 21, at this moment open dry pump（It is not shown）And butterfly valve（It is not shown）, control
Chamber pressure 1-5torr opens baffle after pressure stabilization, is 250nm until lead iodide grows into thickness.
4, dry pump and butterfly valve are closed, molecule pump group is opened（It is not shown）, it vacuumizes, while the second vaporization chamber 3 also vacuumizes,
Wait for that the first vaporization chamber 2 and the second vaporization chamber 3 all reach 1E-5torr, the second transfer gate 7 is opened, and sample enters the second vaporization chamber 3.
5, molecule pump group is closed, silicon waits for that temperature is stablized to 150 degree, heats methyl amine iodine powder to 150 degree, first
Base amine iodine distils and the reaction of the lead chloride of substrate generates perovskite thin film.Take out substrate.
6, electron transfer layer is prepared：The material of electron transfer layer is zinc oxide or PCBM, and used method is spraying,
Blade coating or inkjet printing, later laser grooving and scribing P2.
7, the sample prepared is put into metal electrode preparation room 5, uses electrode evaporation equipment evaporation electrode, electrode material
Silver or gold are selected, later laser grooving and scribing P3.
8, cell package.
Those of ordinary skill in fields it should be appreciated that, the features of the present invention or the first purpose are：
It substantially increases the large-area uniformity of perovskite solar cell and prepares rate.
It should be pointed out that any change that one skilled in the art does the specific implementation mode of the present invention
All without departing from the range of claims of the present invention.Correspondingly, the scope of the claims of the invention is also not merely limited to
In previous embodiment.
Claims (2)
1. a kind of manufacturing system of large area perovskite solar cell, which is characterized in that including：Hole transmission layer preparation room,
Sample Room, the first vaporization chamber, the second vaporization chamber and metal electrode preparation room, the Sample Room are connected to first vaporization chamber,
First vaporization chamber and the connection of the second vaporization chamber, are equipped with the first transfer gate between the Sample Room and first vaporization chamber,
The second transfer gate is equipped between first vaporization chamber and the second vaporization chamber, the Sample Room is communicated with the first vacuum pump group, institute
It states the first vaporization chamber and is communicated with the second vacuum pump group, second vaporization chamber is communicated with third vacuum pump group, first evaporation
Interior is equipped with fluffy head, sublimation tank, the vacuum pump for being vacuumized to sublimation tank and inert gas input unit, and the fluffy head has
The spacing of multiple cavernous structures, the two neighboring cavernous structure is 1cm, and the aperture of the cavernous structure is 200-500um, institute
It states fluffy head with sublimation tank to be connected, the bottom of the sublimation tank is equipped with the cylindrical bump of a height of 0.5cm, a diameter of 0.5cm, institute
Sublimation tank connection vacuum pump is stated, the inert gas input unit connects the sublimation tank.
2. the manufacturing system of large area perovskite solar cell according to claim 1, which is characterized in that described second
Stainless steel disc and heater are equipped in vaporization chamber, the stainless steel disc is positioned on the heater.
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| CN109920919B (en) * | 2017-12-12 | 2020-07-07 | 中国科学院大连化学物理研究所 | Flexible and rigid dual-purpose perovskite solar cell integrated deposition system |
| CN110047998B (en) * | 2018-01-17 | 2023-09-26 | 杭州纤纳光电科技有限公司 | Device for preparing perovskite solar cell in immersion mode and use method |
| CN108493340B (en) * | 2018-03-27 | 2020-04-21 | 武汉理工大学 | Method for preparing perovskite solar cell with assistance of steam |
| CN108389975B (en) * | 2018-04-10 | 2021-06-01 | 常州大学 | Preparation method of perovskite solar cell module |
| EP3824492A4 (en) * | 2018-07-18 | 2022-04-20 | Massachusetts Institute of Technology | Alternating multi-source vapor transport deposition |
| CN111244279A (en) * | 2018-11-29 | 2020-06-05 | 中国科学院大连化学物理研究所 | Reel-to-reel vacuum deposition system and preparation method for flexible perovskite solar cell |
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| CN105679936A (en) * | 2016-04-18 | 2016-06-15 | 河北大学 | Lead-free perovskite film, and preparation method and application thereof |
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| CN102569512A (en) * | 2010-12-23 | 2012-07-11 | 初星太阳能公司 | Integrated deposition of thin film layers in cadmium telluride based photovoltaic module manufacture |
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