CN111816580A - Method and system for measuring width of pattern boss of wafer retaining ring - Google Patents
Method and system for measuring width of pattern boss of wafer retaining ring Download PDFInfo
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- CN111816580A CN111816580A CN202010688595.XA CN202010688595A CN111816580A CN 111816580 A CN111816580 A CN 111816580A CN 202010688595 A CN202010688595 A CN 202010688595A CN 111816580 A CN111816580 A CN 111816580A
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
- G01B11/00—Measuring arrangements characterised by the use of optical techniques
- G01B11/02—Measuring arrangements characterised by the use of optical techniques for measuring length, width or thickness
- G01B11/022—Measuring arrangements characterised by the use of optical techniques for measuring length, width or thickness by means of tv-camera scanning
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
- H01L22/10—Measuring as part of the manufacturing process
- H01L22/12—Measuring as part of the manufacturing process for structural parameters, e.g. thickness, line width, refractive index, temperature, warp, bond strength, defects, optical inspection, electrical measurement of structural dimensions, metallurgic measurement of diffusions
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
- H01L22/20—Sequence of activities consisting of a plurality of measurements, corrections, marking or sorting steps
- H01L22/24—Optical enhancement of defects or not directly visible states, e.g. selective electrolytic deposition, bubbles in liquids, light emission, colour change
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Abstract
The invention provides a method and a system for measuring the width of a pattern boss of a wafer retaining ring, wherein the detection method comprises the following steps: the image acquisition device shoots the pattern lug boss of the wafer retaining ring and transmits acquired image information to the measurement software system, characteristic points of the pattern lug boss in the image information are captured, distance data between the characteristic points is obtained through calculation of the measurement software system and is the width of the pattern lug boss, the position of the wafer retaining ring is changed, and the width of the pattern lug boss in different detection areas is measured by adopting the detection method. According to the invention, the image acquisition device is used for photographing and is combined with the measurement software system, so that the width of the pattern boss is accurately measured, the detection speed of the product is improved, and a multifunctional systematic detection scheme integrating image acquisition, information identification, detection judgment and data summarization is formed, so that the processing stability of the pattern boss is deeply known, and the product quality of the wafer retaining ring is effectively ensured.
Description
Technical Field
The invention belongs to the technical field of quality inspection of wafer retaining rings, relates to a measuring method and a measuring system of a wafer retaining ring, and particularly relates to a measuring method and a measuring system of the width of a pattern boss of a wafer retaining ring.
Background
With the advent of the information age, microelectronic and semiconductor technologies play a significant role in national economic development, and magnetron sputtering technology has greatly pushed the development of the microelectronic and semiconductor industries. The principle of magnetron sputtering is to bombard the surface of a high-purity target by using high-energy particles, so that target atoms obtain energy to overcome surface work function and are deposited on a substrate by escaping from the surface to form a thin film layer. But the energetic particles bombard the target from all directions making the direction of the escaping target atoms not unique. When target atoms in different directions reach the surface of the substrate along a straight line, the uniformity of a thin film layer deposited on each part of the substrate can be reduced, especially when the characteristic size of the substrate is small and the depth-to-width ratio of a filled hole is large, only one part of the target atoms can be vertically deposited on the substrate, and the step hole with the large depth-to-width ratio is easy to block to form a hole.
In order to solve the problems, a ring piece made of the same material as the target material is arranged between the target material and the substrate. A high-density plasma region is formed after a radio frequency power supply is applied to the ring piece, atoms escaping from the target material are ionized into charged particles in the plasma region, the charged particles moving in different directions are deposited on the substrate in the vertical direction under the action of an electric field between the target material and the substrate, and the deep hole deposition effect is good. The wafer retaining ring can also adsorb particles generated in the sputtering process, so that the substrate is prevented from being polluted and damaged.
CN204111859U discloses a magnetron wafer retaining ring device and a magnetron sputtering reactor, wherein the magnetron wafer retaining ring device includes: install on magnetron sputtering cavity lateral wall, magnetron sputtering cavity lateral wall has the locating pin cover, magnetron wafer retaining ring device includes: the magnetic control wafer retaining ring comprises an inner ring side wall and an outer ring side wall opposite to the inner ring side wall, and the outer ring side wall is provided with a groove; one end of the positioning pin is connected with the bottom of the groove, the other end of the positioning pin is sleeved in the positioning pin sleeve, the distance between the side wall of the inner ring and the positioning pin sleeve is unchanged, and the distance between the side wall of the outer ring of the magnetic control wafer retaining ring and the positioning pin sleeve is larger than 0.01 mm and smaller than 6 mm.
CN110670031A discloses a tantalum ring and a preparation method thereof, a sputtering device containing the tantalum ring and an application thereof, wherein the tantalum ring comprises a ring piece and patterns arranged on the surface of the ring piece, and the patterns are in a conical pit shape; the conical pit-shaped pattern has a large specific surface area, can be attached to a large number of sputtering sources in a sputtering process and has good adhesion, and in addition, the pattern is conical pit-shaped, the tops of the conical pits face the inside of the ring, the bottoms of two adjacent conical pits are connected, and a planar structure is formed instead of a structure with a tip.
CN101934495A discloses a wafer retaining ring, which comprises a first ring, a second ring and at least two connecting devices; the first circular ring is provided with a first plane and a second plane which are opposite, a first sub-recess and a second sub-recess which are communicated up and down along the thickness direction of the first circular ring are formed in the first circular ring, the opening of the first sub-recess is exposed to the first plane, the second sub-recess extends into the first circular ring, and the width dimension of the first sub-recess is smaller than that of the second sub-recess; a channel penetrating through the second ring is formed in the second ring; the connecting device comprises a first clamping structure, a connecting rod and a second clamping structure; the first clamping structure is connected with one end of the connecting rod, and the second clamping structure is connected with the other end of the connecting rod; the connecting rod penetrates through the channel of the second circular ring and the first sub-recess and extends into the second sub-recess, the second clamping structure is clamped in the second sub-recess, and the first clamping structure is clamped with the channel of the second circular ring.
In the magnetron sputtering process of the wafer retaining ring, the requirement on the width size of surface knurling is very high, whether the width of a surface ring grain boss is uniform or not is judged by adopting a manual visual inspection mode in the prior art, but the mode cannot quantify the width index on the one hand, and on the other hand, the visual inspection error is larger, and the accuracy is difficult to judge.
Disclosure of Invention
The invention aims to provide a method and a system for measuring the width of a pattern boss of a wafer retaining ring, and the method and the system are used for realizing the accurate measurement of the width of the pattern boss by using an image acquisition device for photographing and combining with a measurement software system, thereby not only improving the detection speed of a product, but also forming a multifunctional systematic detection scheme integrating image acquisition, information identification, detection judgment and data summarization, further facilitating the deep understanding of the processing stability of the pattern boss and effectively ensuring the product quality of the wafer retaining ring.
In order to achieve the purpose, the invention adopts the following technical scheme:
in a first aspect, the present invention provides a method for measuring the width of a pattern boss of a wafer retaining ring, wherein the detection method comprises:
the image acquisition device shoots the pattern boss of the wafer retaining ring and transmits the acquired image information to the measurement software system, the pattern boss characteristic points in the image information are captured, and the distance data between the characteristic points is obtained through calculation of the measurement software system, namely the width of the pattern boss.
According to the invention, the image acquisition device is used for photographing and is combined with the measurement software system, so that the width of the pattern boss is accurately measured, the detection speed of the product is improved, and a multifunctional systematic detection scheme integrating image acquisition, information identification, detection judgment and data summarization is formed, so that the processing stability of the pattern boss is deeply known, and the product quality of the wafer retaining ring is effectively ensured.
As a preferred technical solution of the present invention, the detection method specifically includes the following steps:
s1, the user holds the image acquisition device to scan and take pictures of the detection area of the wafer retaining ring, and the acquired image information is transmitted to the measurement software system through the data interaction port;
s2, adjusting the magnification to select clear pattern boss images, capturing limit feature points at two ends of the width of any pattern boss, and calculating the linear distance between the two feature points by a measurement software system to obtain the width of the selected pattern boss;
s3, adjusting the detection area of the wafer retaining ring, repeating the steps S1-S2, and measuring the widths of the pattern bosses in different detection areas of the wafer retaining ring.
As a preferred embodiment of the present invention, in step S1, the image capturing device is a handheld microscope;
preferably, in step S2, the magnification is 50 to 200 times, for example, 50 times, 60 times, 70 times, 80 times, 90 times, 100 times, 110 times, 120 times, 130 times, 140 times, 150 times, 160 times, 170 times, 180 times, 190 times or 200 times, but the magnification is not limited to the recited values, and other values not recited in the numerical range are also applicable
Preferably, step S2 further includes: the measured top surface width data and the preset reference width range are logically compared through a measuring software system algorithm, the width of the pattern boss is prompted to reach the standard when the measured data fall into the reference width range, and the width of the pattern boss is prompted to be not reached to the standard when the measured data fall out of the reference width range.
As a preferable technical scheme of the invention, the wafer retaining ring is of an annular structure formed by encircling strip-shaped plates, gaps are reserved at the butt joint parts of two ends of the encircled strip-shaped plates, and truncated pyramid-shaped pattern bosses are uniformly distributed on the outer surface of the wafer retaining ring.
The wafer retaining ring comprises an inner side ring surface and an outer side ring surface which are coaxially arranged, and the circumferential outer edges of the top surface and the bottom surface of the inner side ring surface and the outer side ring surface are respectively sealed through an upper shoulder surface and a lower shoulder surface to form the annular structure.
As a preferred technical solution of the present invention, the measuring method includes: the top surface widths of the pattern bosses distributed on the inner side ring surface, the outer side ring surface, the upper shoulder surface and the lower shoulder surface of the wafer retaining ring are measured respectively.
Preferably, the widths of the top surfaces of the pattern bosses distributed on the inner annular surface, the outer annular surface, the upper shoulder surface and the lower shoulder surface are not measured in sequence.
As a preferred technical solution of the present invention, the process of measuring the inner ring surface of the wafer retaining ring includes: optionally selecting at least one detection area on the inner annular surface of the wafer retaining ring, sequentially performing the step S1 and the step S2 to obtain the width data of the top surface of any pattern boss in the detection area, logically comparing the width data with a preset reference width range, and judging whether the pattern boss reaches the standard or not according to the comparison result;
preferably, 20 to 30 detection regions are optionally provided on the inner annular surface of the wafer holding ring, for example, 20, 21, 22, 23, 24, 25, 26, 27, 28, 29 or 30 detection regions may be provided, but the number is not limited to the recited values, and other non-recited values in the range of the values are also applicable, and further preferably, 24 detection regions are optionally provided on the inner annular surface of the wafer holding ring.
Preferably, the predetermined reference width of the pattern protrusions distributed on the inner annular surface is in the range of 0.85-0.95 mm, such as 0.85mm, 0.86mm, 0.87mm, 0.88mm, 0.89mm, 0.90mm, 0.91mm, 0.92mm, 0.93mm, 0.94mm or 0.95mm, but is not limited to the values listed, and other values not listed in the range of values are equally applicable.
Preferably, in the process of measuring the detection area of the inner annular surface, the capturing process in step S2 is to automatically capture the characteristic points at both ends of the width of any pattern boss in the detection area by the measurement software system.
As a preferred embodiment of the present invention, the process of measuring the outer ring surface of the wafer retaining ring includes: and (3) optionally selecting at least one detection area on the outer annular surface of the wafer retaining ring, sequentially performing the step (S1) and the step (S2), acquiring the width data of the top surface of any pattern boss in the detection area, logically comparing the data with a preset reference width range, and judging whether the pattern boss reaches the standard or not according to the comparison result.
Preferably, there are optionally 5 to 10 detection regions on the outer ring surface of the wafer-holding ring, such as 5, 6, 7, 8, 9 or 10, but not limited to the values listed, and other values within the range are also applicable, and further preferably there are optionally 8 detection regions on the outer ring surface of the wafer-holding ring.
Preferably, the predetermined reference width of the pattern protrusions distributed on the outer annular surface is in the range of 0.8 to 0.9mm, such as 0.80mm, 0.81mm, 0.82mm, 0.83mm, 0.84mm, 0.85mm, 0.86mm, 0.87mm, 0.88mm, 0.89mm or 0.90mm, but is not limited to the values listed, and other values not listed in the range of values are equally applicable.
Preferably, in the measuring of the detection area of the outer ring surface, the grasping process of step S2 includes: and the measuring software system automatically captures limit characteristic points at two ends of the width of any pattern boss in the detection area.
As a preferred aspect of the present invention, the process of measuring the upper shoulder surface of the wafer retaining ring includes: and (3) optionally selecting at least one detection area on the upper shoulder surface of the wafer retaining ring, sequentially performing the step (S1) and the step (S2), acquiring the width data of the top surface of any pattern boss in the detection area, logically comparing the data with a preset reference width range, and judging whether the pattern boss reaches the standard or not according to the comparison result.
Preferably, there are optionally 5 to 10 detection regions on the upper shoulder surface of the wafer-holding ring, for example, 5, 6, 7, 8, 9 or 10, but not limited to the values listed, and other values not listed within this range of values are equally applicable, and further preferably there are optionally 6 detection regions on the upper shoulder surface of the wafer-holding ring.
Preferably, the predetermined reference width of the pattern lug bosses distributed on the upper shoulder surface is in the range of 0.65-0.75 mm, but not limited to the recited values, and other values in the range of the recited values are also applicable.
Preferably, in the measuring of the detection region of the upper shoulder surface, the grasping process of step S2 includes: and (3) observing the shape of the pattern lug boss in the detection area by naked eyes and manually selecting limit characteristic points at two ends of the width of any pattern lug boss.
As a preferred technical solution of the present invention, the process of measuring the lower shoulder surface of the wafer retaining ring includes: and optionally selecting at least one detection area on the lower shoulder surface of the wafer retaining ring, and sequentially performing the step S1 and the step S2 to obtain the top surface width data of any pattern boss in the detection area.
Preferably, there are optionally 5 to 10 detection regions on the lower shoulder surface of the wafer-holding ring, for example, 5, 6, 7, 8, 9 or 10, but not limited to the values listed, and other values not listed within this range are equally applicable, and further preferably there are optionally 6 detection regions on the lower shoulder surface of the wafer-holding ring.
Preferably, the predetermined reference width of the pattern bosses distributed on the lower shoulder surface is in the range of 0.6 to 0.7mm, and may be, for example, 0.60mm, 0.61mm, 0.62mm, 0.63mm, 0.64mm, 0.65mm, 0.66mm, 0.67mm, 0.68mm, 0.69mm or 0.70mm, but is not limited to the values listed, and other values not listed in the range of values are also applicable.
Preferably, in the measuring of the detection region of the lower shoulder surface, the grasping process of step S2 includes: and (3) observing the shape of the pattern lug boss in the detection area by naked eyes and manually selecting limit characteristic points at two ends of the width of any pattern lug boss.
In a second aspect, the present invention provides a system for measuring a width of a pattern land of a wafer holding ring, the system being used for implementing the measuring method of the first aspect, the system comprising: the system comprises an image acquisition device and a computer, wherein the image acquisition device is connected with a data communication interface of the computer, and a measurement software system is written in the computer.
The system refers to an equipment system, or a production equipment.
Compared with the prior art, the invention has the beneficial effects that:
according to the invention, the image acquisition device is used for photographing and is combined with the measurement software system, so that the width of the pattern boss is accurately measured, the detection speed of the product is improved, and a multifunctional systematic detection scheme integrating image acquisition, information identification, detection judgment and data summarization is formed, so that the processing stability of the pattern boss is deeply known, and the product quality of the wafer retaining ring is effectively ensured.
Drawings
Fig. 1 is a pattern boss image photograph of a certain detection area on the inner ring surface in the application example of the invention.
Detailed Description
It is to be understood that in the description of the present invention, the terms "center", "longitudinal", "lateral", "up", "down", "front", "back", "left", "right", "vertical", "horizontal", "top", "bottom", "inner", "outer", etc., indicate orientations or positional relationships based on those shown in the drawings, and are used only for convenience in describing the present invention and for simplicity in description, and do not indicate or imply that the device or element being referred to must have a particular orientation, be constructed and operated in a particular orientation, and thus, should not be taken as limiting the present invention. Furthermore, the terms "first", "second", etc. are used for descriptive purposes only and are not to be construed as indicating or implying relative importance or implicitly indicating the number of technical features indicated. Thus, a feature defined as "first," "second," etc. may explicitly or implicitly include one or more of that feature. In the description of the present invention, "a plurality" means two or more unless otherwise specified.
It should be noted that, in the description of the present invention, unless otherwise explicitly specified or limited, the terms "disposed," "connected" and "connected" are to be construed broadly, and may be, for example, fixedly connected, detachably connected, or integrally connected; can be mechanically or electrically connected; they may be connected directly or indirectly through intervening media, or they may be interconnected between two elements. The specific meaning of the above terms in the present invention can be understood by those of ordinary skill in the art through specific situations.
The technical scheme of the invention is further explained by the specific implementation mode in combination with the attached drawings.
In one embodiment, the present invention provides a system for measuring a land width of a wafer retaining ring, the system comprising: the system comprises an image acquisition device and a computer, wherein the image acquisition device is connected with a data communication interface of the computer, and a measurement software system is written in the computer.
In another embodiment, the present invention provides a method for measuring a width of a pattern land of a wafer retaining ring, wherein the method specifically comprises the following steps:
s1, the user holds the microscope to scan and take a picture of the detection area of the wafer retaining ring, and the acquired image information is transmitted to the measurement software system through the data interaction port;
s2, adjusting the magnification to select clear pattern boss images, capturing limit feature points at two ends of the width of any pattern boss, and calculating the linear distance between the two feature points by a measurement software system to obtain the width of the selected pattern boss;
logically comparing the actually measured top surface width data with a preset reference width range through a measurement software system algorithm, prompting that the width of the pattern boss reaches the standard when the actually measured data falls into the reference width range, and prompting that the width of the pattern boss does not reach the standard when the actually measured data falls out of the reference width range;
s3, adjusting the detection area of the wafer retaining ring, repeating the steps S1-S2, and measuring the widths of the pattern bosses in different detection areas of the wafer retaining ring.
It should be noted that, in this embodiment, the wafer retaining ring is an annular structure formed by a strip-shaped plate in an encircling manner, a gap is reserved at a joint between two ends of the encircled strip-shaped plate, the wafer retaining ring includes an inner annular surface and an outer annular surface that are coaxially arranged, and a top circumferential outer edge and a bottom circumferential outer edge of the inner annular surface and the outer annular surface are respectively formed by an upper shoulder surface and a lower shoulder surface in a sealing manner. Flat-head pyramid-shaped pattern bosses are uniformly distributed on the outer surface (comprising an inner side ring surface, an outer side ring surface, an upper shoulder surface and a lower shoulder surface) of the wafer retaining ring, and the measuring method provided by the invention is used for measuring the width of the top end surface of each flat-head pyramid-shaped pattern boss (see figure 1).
Specifically, the measurement method comprises the following steps: the widths of the top surfaces of the pattern bosses distributed on the inner annular surface, the outer annular surface, the upper shoulder surface and the lower shoulder surface of the wafer retaining ring are measured respectively, and the widths of the top surfaces of the pattern bosses distributed on the inner annular surface, the outer annular surface, the upper shoulder surface and the lower shoulder surface are not measured sequentially.
Firstly, the process of measuring the inner ring surface of the wafer retaining ring comprises the following steps:
(1) optionally selecting at least one detection area on the inner ring surface of the wafer retaining ring, further optionally selecting 20-30 detection areas on the inner ring surface of the wafer retaining ring, scanning and photographing one detection area by a user holding a microscope, and transmitting acquired image information to a measurement software system through a data interaction port;
(2) adjusting the magnification (optionally adjusting to 50-200 times) by a detector to select a clear pattern boss image, automatically grabbing limit feature points at two ends of the width of any pattern boss in the detection area by a measurement software system, and calculating the linear distance between the two feature points by the measurement software system to obtain the width of the selected pattern boss;
(3) logically comparing the actually measured top surface width data with a preset reference width range through a measuring software system algorithm (the preset reference width range of the pattern lug bosses distributed on the inner annular surface is 0.85-0.95 mm), prompting that the width of the pattern lug bosses reaches the standard when the actually measured data falls into the reference width range, and prompting that the width of the pattern lug bosses does not reach the standard when the actually measured data falls out of the reference width range;
(4) and (3) detecting all optional detection areas on the inner ring surface one by adopting the steps (1) to (3), wherein the wafer retaining ring product does not reach the standard as long as one of the pattern bosses does not reach the standard.
Secondly, the measuring process of the outer ring surface of the wafer retaining ring comprises the following steps:
(1) optionally selecting at least one detection area on the outer side ring surface of the wafer retaining ring, further optionally selecting 5-10 detection areas on the outer side ring surface of the wafer retaining ring, scanning and photographing one detection area by a user holding a microscope, and transmitting acquired image information to a measurement software system through a data interaction port;
(2) adjusting the magnification (optionally adjusting to 50-200 times) by a detector to select a clear pattern boss image, automatically grabbing limit feature points at two ends of the width of any pattern boss in the detection area by a measurement software system, and calculating the linear distance between the two feature points by the measurement software system to obtain the width of the selected pattern boss;
(3) logically comparing the actually measured top surface width data with a preset reference width range through a measuring software system algorithm (the preset reference width range of the pattern lug bosses distributed on the outer annular surface is 0.8-0.9 mm), prompting that the width of the pattern lug bosses reaches the standard when the actually measured data falls into the reference width range, and prompting that the width of the pattern lug bosses does not reach the standard when the actually measured data falls out of the reference width range;
(4) and (3) detecting all optional detection areas on the outer ring surface one by adopting the steps (1) to (3), wherein the wafer retaining ring product does not reach the standard as long as one of the pattern bosses does not reach the standard.
Thirdly, the measuring process of the upper shoulder surface of the wafer retaining ring comprises the following steps:
(1) optionally selecting at least one detection area on the upper shoulder surface of the wafer retaining ring, further optionally selecting 5-10 detection areas on the upper shoulder surface of the wafer retaining ring to obtain the detection areas, scanning and photographing one detection area by a user holding a microscope, and transmitting the acquired image information to a measurement software system through a data interaction port;
(2) adjusting the magnification (optionally adjusting to 50-200 times) by a detector to select a clear pattern boss image, observing the pattern boss appearance in the detection area by naked eyes by the detector, manually selecting limit characteristic points at two ends of the width of any pattern boss, and calculating the linear distance between the two characteristic points by a measurement software system to obtain the width of the selected pattern boss;
(3) logically comparing the actually measured top surface width data with a preset reference width range through a measuring software system algorithm (the preset reference width range of the pattern lug bosses distributed on the upper shoulder surface is 0.65-0.75 mm), prompting that the width of the pattern lug bosses reaches the standard when the actually measured data falls into the reference width range, and prompting that the width of the pattern lug bosses does not reach the standard when the actually measured data falls out of the reference width range;
(4) and (4) detecting all optional detection areas on the upper shoulder surface one by adopting the steps (1) to (3), wherein the wafer retaining ring product does not reach the standard as long as one of the pattern bosses does not reach the standard.
Fourthly, the measuring process of the lower shoulder surface of the wafer retaining ring comprises the following steps:
(1) optionally selecting at least one detection area on the lower shoulder surface of the wafer retaining ring, further optionally selecting 5-10 detection areas on the lower shoulder surface of the wafer retaining ring, scanning and photographing one detection area by a user holding a microscope, and transmitting acquired image information to a measurement software system through a data interaction port;
(2) adjusting the magnification (optionally adjusting to 50-200 times) by a detector to select a clear pattern boss image, observing the pattern boss appearance in the detection area by naked eyes by the detector, manually selecting limit characteristic points at two ends of the width of any pattern boss, and calculating the linear distance between the two characteristic points by a measurement software system to obtain the width of the selected pattern boss;
(3) performing logic comparison on the actually measured top surface width data and a preset reference width range through a measurement software system algorithm (the preset reference width range of the pattern bosses distributed on the lower shoulder surface is 0.6-0.7 mm), prompting that the width of the pattern bosses reaches the standard when the actually measured data falls into the reference width range, and prompting that the width of the pattern bosses does not reach the standard when the actually measured data falls out of the reference width range;
(4) and (4) detecting all optional detection areas on the lower shoulder surface one by adopting the steps (1) to (3), wherein the condition that the whole wafer retaining ring product does not reach the standard is indicated as long as one of the pattern bosses does not reach the standard.
Application example
Taking a wafer retaining ring to be measured provided by an electronic factory as an example to carry out width quality inspection on the patterned lug boss, the measuring process comprises the following steps:
the width of the top surface of the pattern lug bosses distributed on the inner side ring surface, the outer side ring surface, the upper shoulder surface and the lower shoulder surface of the wafer retaining ring is measured by holding a microscope by a tester in sequence. The measurement process of each surface specifically comprises:
measuring the inner ring surface of the wafer retaining ring:
(1) optionally selecting 24 detection areas on the inner ring surface of the wafer retaining ring, scanning and photographing one of the detection areas by a user holding a microscope (as shown in fig. 1), and transmitting acquired image information to a measurement software system through a data interaction port;
(2) the detection personnel adjust the magnification to 50 times, select clear pattern boss images, the measurement software system automatically captures the extreme characteristic points at the two ends of the width of any pattern boss in the detection area, and the measurement software system calculates the linear distance between the two characteristic points to be the width of the selected pattern boss;
(3) logically comparing the actually measured top surface width data with a preset reference width range through a measuring software system algorithm (the preset reference width range of the pattern lug bosses distributed on the inner annular surface is 0.85-0.95 mm), prompting that the width of the pattern lug bosses reaches the standard when the actually measured data falls into the reference width range, and prompting that the width of the pattern lug bosses does not reach the standard when the actually measured data falls out of the reference width range;
(4) and (4) detecting the rest 23 detection areas on the inner annular surface one by adopting the steps (1) to (3).
The results of the measurements are shown in the following table:
(II) the measuring process of the outer ring surface of the wafer holding ring comprises the following steps:
(1) selecting 8 detection areas on the outer side ring surface of the wafer retaining ring, scanning and photographing one of the detection areas by a user holding a microscope, and transmitting acquired image information to a measurement software system through a data interaction port;
(2) the detection personnel adjust the magnification to 50 times, select clear pattern boss images, the measurement software system automatically captures the extreme characteristic points at the two ends of the width of any pattern boss in the detection area, and the measurement software system calculates the linear distance between the two characteristic points to be the width of the selected pattern boss;
(3) logically comparing the actually measured top surface width data with a preset reference width range through a measuring software system algorithm (the preset reference width range of the pattern lug bosses distributed on the outer annular surface is 0.8-0.9 mm), prompting that the width of the pattern lug bosses reaches the standard when the actually measured data falls into the reference width range, and prompting that the width of the pattern lug bosses does not reach the standard when the actually measured data falls out of the reference width range;
(4) and (4) detecting the other 7 detection areas on the outer annular surface one by adopting the steps (1) to (3).
The results of the measurements are shown in the following table:
(III) the measurement process of the upper shoulder surface of the wafer holding ring comprises the following steps:
(1) selecting 6 detection areas on the upper shoulder surface of the wafer retaining ring optionally to obtain detection areas, scanning and photographing one of the detection areas by a user holding a microscope, and transmitting acquired image information to a measurement software system through a data interaction port;
(2) adjusting the magnification to 50 times by a detection person, selecting a clear pattern boss image, observing the pattern boss appearance in the detection area by the detection person through naked eyes, manually selecting limit characteristic points at two ends of the width of any pattern boss, and calculating the linear distance between the two characteristic points through a measurement software system to obtain the width of the selected pattern boss;
(3) logically comparing the actually measured top surface width data with a preset reference width range through a measuring software system algorithm (the preset reference width range of the pattern lug bosses distributed on the upper shoulder surface is 0.65-0.75 mm), prompting that the width of the pattern lug bosses reaches the standard when the actually measured data falls into the reference width range, and prompting that the width of the pattern lug bosses does not reach the standard when the actually measured data falls out of the reference width range;
(4) and (4) detecting the other 5 detection areas on the upper shoulder surface one by adopting the steps (1) to (3).
The results of the measurements are shown in the following table:
(IV) the measuring process of the lower shoulder surface of the wafer holding ring comprises the following steps:
(1) selecting 6 detection areas on the lower shoulder surface of the wafer retaining ring, scanning and photographing one of the detection areas by a user holding a microscope, and transmitting acquired image information to a measurement software system through a data interaction port;
(2) adjusting the magnification to 50 times by a detection person, selecting a clear pattern boss image, observing the pattern boss appearance in the detection area by the detection person through naked eyes, manually selecting limit characteristic points at two ends of the width of any pattern boss, and calculating the linear distance between the two characteristic points through a measurement software system to obtain the width of the selected pattern boss;
(3) performing logic comparison on the actually measured top surface width data and a preset reference width range through a measurement software system algorithm (the preset reference width range of the pattern bosses distributed on the lower shoulder surface is 0.6-0.7 mm), prompting that the width of the pattern bosses reaches the standard when the actually measured data falls into the reference width range, and prompting that the width of the pattern bosses does not reach the standard when the actually measured data falls out of the reference width range;
(4) and (4) detecting the other 5 detection areas on the lower shoulder surface one by adopting the steps (1) to (3).
The results of the measurements are shown in the following table:
the actual measurement result shows that the width of the pattern lug boss of the wafer retaining ring to be measured provided by the electronic factory meets the requirement, the whole wafer retaining ring reaches the standard and passes quality inspection.
The applicant declares that the above description is only a specific embodiment of the present invention, but the scope of the present invention is not limited thereto, and it should be understood by those skilled in the art that any changes or substitutions that can be easily conceived by those skilled in the art within the technical scope of the present invention are within the scope and disclosure of the present invention.
Claims (10)
1. A method for measuring the width of a pattern boss of a wafer retaining ring is characterized by comprising the following steps:
the image acquisition device shoots the pattern boss of the wafer retaining ring and transmits the acquired image information to the measurement software system, the pattern boss characteristic points in the image information are captured, and the distance data between the characteristic points is obtained through calculation of the measurement software system, namely the width of the pattern boss.
2. The measurement method according to claim 1, wherein the detection method specifically comprises the steps of:
s1, the user holds the image acquisition device to scan and take pictures of the detection area of the wafer retaining ring, and the acquired image information is transmitted to the measurement software system through the data interaction port;
s2, adjusting the magnification to select clear pattern boss images, capturing limit feature points at two ends of the width of any pattern boss, and calculating the linear distance between the two feature points by a measurement software system to obtain the width of the selected pattern boss;
s3, adjusting the detection area of the wafer retaining ring, repeating the steps S1-S2, and measuring the widths of the pattern bosses in different detection areas of the wafer retaining ring.
3. The measuring method according to claim 1 or 2, wherein in step S1, the image acquisition device is a handheld microscope;
preferably, in step S2, the magnification is 50 to 200 times;
preferably, step S2 further includes: the measured top surface width data and the preset reference width range are logically compared through a measuring software system algorithm, the width of the pattern boss is prompted to reach the standard when the measured data fall into the reference width range, and the width of the pattern boss is prompted to be not reached to the standard when the measured data fall out of the reference width range.
4. The measuring method according to any one of claims 1 to 3, wherein the wafer retaining ring is an annular structure formed by encircling strip-shaped plates, notches are reserved at the joint of two ends of the encircled strip-shaped plates, and truncated pyramid-shaped pattern bosses are uniformly distributed on the outer surface of the wafer retaining ring;
the wafer retaining ring comprises an inner side ring surface and an outer side ring surface which are coaxially arranged, and the circumferential outer edges of the top surface and the bottom surface of the inner side ring surface and the outer side ring surface are respectively sealed through an upper shoulder surface and a lower shoulder surface to form the annular structure.
5. The measurement method according to any one of claims 1 to 4, characterized in that the measurement method comprises: measuring the widths of the top surfaces of the pattern bosses distributed on the inner side annular surface, the outer side annular surface, the upper shoulder surface and the lower shoulder surface of the wafer retaining ring respectively;
preferably, the widths of the top surfaces of the pattern bosses distributed on the inner annular surface, the outer annular surface, the upper shoulder surface and the lower shoulder surface are not measured in sequence.
6. The measurement method according to any one of claims 2 to 5, wherein the measuring of the inner ring surface of the wafer holding ring comprises: optionally selecting at least one detection area on the inner annular surface of the wafer retaining ring, sequentially performing the step S1 and the step S2 to obtain the width data of the top surface of any pattern boss in the detection area, logically comparing the width data with a preset reference width range, and judging whether the pattern boss reaches the standard or not according to the comparison result;
preferably, 20-30 detection areas are optionally selected on the inner annular surface of the wafer holding ring, and further preferably, 24 detection areas are optionally selected on the inner annular surface of the wafer holding ring;
preferably, the preset reference width range of the pattern lug bosses distributed on the inner annular surface is 0.85-0.95 mm;
preferably, in the process of measuring the detection area of the inner annular surface, the capturing process in step S2 is to automatically capture the characteristic points at both ends of the width of any pattern boss in the detection area by the measurement software system.
7. The measurement method according to any one of claims 2 to 6, wherein the measuring of the outer annular surface of the wafer holding ring comprises: optionally selecting at least one detection area on the outer side ring surface of the wafer retaining ring, sequentially performing the step S1 and the step S2, obtaining the width data of the top surface of any pattern boss in the detection area, logically comparing the width data with a preset reference width range, and judging whether the pattern boss reaches the standard or not according to the comparison result;
preferably, 5-10 detection areas are optionally selected on the outer ring surface of the wafer holding ring, and further preferably, 8 detection areas are optionally selected on the outer ring surface of the wafer holding ring;
preferably, the preset reference width range of the pattern lug bosses distributed on the outer annular surface is 0.8-0.9 mm;
preferably, in the measuring of the detection area of the outer ring surface, the grasping process of step S2 includes: and the measuring software system automatically captures limit characteristic points at two ends of the width of any pattern boss in the detection area.
8. The measurement method according to any one of claims 2 to 7, wherein the measurement process of the upper shoulder surface of the wafer holding ring comprises: optionally selecting at least one detection area on the upper shoulder surface of the wafer retaining ring, sequentially performing the step S1 and the step S2, obtaining the width data of the top surface of any pattern boss in the detection area, logically comparing the data with a preset reference width range, and judging whether the pattern boss reaches the standard or not according to the comparison result;
preferably, 5-10 detection areas are optionally selected on the upper shoulder surface of the wafer holding ring, and further preferably, 6 detection areas are optionally selected on the upper shoulder surface of the wafer holding ring;
preferably, the preset reference width range of the pattern lug bosses distributed on the upper shoulder surface is 0.65-0.75 mm;
preferably, in the measuring of the detection region of the upper shoulder surface, the grasping process of step S2 includes: and (3) observing the shape of the pattern lug boss in the detection area by naked eyes and manually selecting limit characteristic points at two ends of the width of any pattern lug boss.
9. The measurement method according to any one of claims 2 to 8, wherein the measurement of the lower shoulder surface of the wafer holding ring comprises: optionally selecting at least one detection area on the lower shoulder surface of the wafer retaining ring, and sequentially performing the step S1 and the step S2 to obtain the width data of the top surface of any pattern boss in the detection area;
preferably, 5-10 detection areas are optionally selected on the lower shoulder surface of the wafer holding ring, and further preferably, 6 detection areas are optionally selected on the lower shoulder surface of the wafer holding ring;
preferably, the preset reference width range of the pattern lug bosses distributed on the lower shoulder surface is 0.6-0.7 mm;
preferably, in the measuring of the detection region of the lower shoulder surface, the grasping process of step S2 includes: and (3) observing the shape of the pattern lug boss in the detection area by naked eyes and manually selecting limit characteristic points at two ends of the width of any pattern lug boss.
10. A system for measuring the width of a pattern land of a wafer holding ring, wherein the system is used for implementing the measuring method of any one of claims 1 to 9;
the measuring system comprises: the system comprises an image acquisition device and a computer, wherein the image acquisition device is connected with a data communication interface of the computer, and a measurement software system is written in the computer.
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN114406896A (en) * | 2022-01-25 | 2022-04-29 | 上海江丰平芯电子科技有限公司 | Retaining ring capable of rapidly detecting service life and use method thereof |
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| CN110622289A (en) * | 2017-05-18 | 2019-12-27 | 应用材料以色列公司 | Measuring height differences in patterns on semiconductor wafers |
| US20200065988A1 (en) * | 2018-08-22 | 2020-02-27 | Kayak Software Corporation | Systems and Methods For Object Measurement |
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| CN1400450A (en) * | 2001-07-31 | 2003-03-05 | 株式会社日立国际电气 | Miniature size measurer |
| CN110622289A (en) * | 2017-05-18 | 2019-12-27 | 应用材料以色列公司 | Measuring height differences in patterns on semiconductor wafers |
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