CN111786695A

CN111786695A - 5G wireless industrial chip applied to strong electric field environment

Info

Publication number: CN111786695A
Application number: CN202010534841.6A
Authority: CN
Inventors: 谭向宇; 赵现平; 李文云; 蔡晓斌; 杨卓; 王科; 彭晶; 李萍; 翟少磊; 杨莉
Original assignee: Electric Power Research Institute of Yunnan Power Grid Co Ltd
Current assignee: Electric Power Research Institute of Yunnan Power Grid Co Ltd
Priority date: 2020-06-12
Filing date: 2020-06-12
Publication date: 2020-10-16

Abstract

The application relates to the technical field of power grid equipment, in particular to a 5G wireless industrial chip applied to a strong electric field environment. The 5G wireless industrial chip applied to the strong electric field environment comprises: the PCB board is used for bearing the radio frequency module, the power supply module and the interface; the radio frequency module is arranged on the PCB and used for receiving and sending signals; the power supply module is arranged on the PCB and provides power for the radio frequency module; and the at least one interface is used for configuring other components.

Description

5G wireless industrial chip applied to strong electric field environment

Technical Field

The application relates to the technical field of power grid equipment, in particular to a 5G wireless industrial chip applied to a strong electric field environment.

Background

As the voltage class increases, internal overvoltages, especially Very Fast Transient Overvoltages (VFTO), generated by routine operations of isolation switches in GISs pose a significant threat to the insulation of electrical equipment such as GISs.

The VFTO rise time is extremely short and is superimposed on the power frequency voltage and affected by residual charge (whose equivalent frequency is close to dc), thus requiring a measurement system with a very high upper cut-off frequency and a sufficiently low lower cut-off frequency. In addition, the accompanying VFTO generates very high TEV and strong spatial electromagnetic interference, so that the measurement of VFTO has many specificities, requires a measuring instrument with short response time and wide frequency band, and requires extremely strong protection and anti-interference measures.

The 5G network can exert the advantages of ultrahigh bandwidth, ultralow time delay and ultra-large scale connection, bear more diversified service requirements of the vertical industry, particularly the application of two innovative functions of network slicing and capacity opening, change the traditional service operation mode and operation mode, and create customized 'industry private network' service for users in the power industry. However, no matter the ultra-high bandwidth, ultra-low time delay and ultra-large scale connection is designed and developed from a communication technology, a network system and communication terminal equipment according to a conventional environment, the influence of a transformer substation on communication facilities is considered, the conventional communication system, namely a telecommunication office needs to consider that site selection needs to be far away from the transformer substation at the initial stage of construction, and in the VFTO test process, the accompanied space electromagnetic interference is stronger than that of the common transformer substation environment, and the requirements on the bandwidth, time delay and even link stability of the communication system in the VFTO test process are higher than those of the traditional industry and electric power on the bandwidth, time delay and link stability of the communication system.

Disclosure of Invention

The application provides a be applied to wireless industrial chip of 5G of strong electric field environment, through aim at solve the communication under the strong interference environment to ensure that communication quality reaches industry basic standard requirement under the scene is linked to super high bandwidth, ultralow time delay, super large-scale, ensure equipment normal use and application such as measuring instrument, sensor that use in VFTO each item is experimental.

The embodiment of the application is realized as follows:

the embodiment of the present application provides in a first aspect a 5G wireless industrial chip applied to a strong electric field environment, including:

the PCB board is used for bearing the radio frequency module, the power supply module and the interface;

the radio frequency module is arranged on the PCB and used for receiving and sending signals;

the power supply module is arranged on the PCB and provides power for the radio frequency module;

and the at least one interface is used for configuring other components.

The technical scheme provided by the application comprises the following beneficial effects: the 5G wireless industrial chip oriented to the strong electric field environment comprises but is not limited to URRLC, EMMB and MMTC mode communication related to 5G applied to VFTO, transformer substations and other strong electric field environments, can solve the wireless communication problem in the strong electric field environments such as VFTO and the like, and ensures effective communication of devices such as sensors and testing instruments; the system can also realize 5G communication, can exert the advantages of ultrahigh bandwidth, ultralow time delay and ultra-large scale connection, and can bear more diversified service requirements of the vertical industry.

Drawings

In order to more clearly explain the technical solution of the present application, the drawings needed to be used in the embodiments will be briefly described below, and it is obvious to those skilled in the art that other drawings can be obtained according to the drawings without any creative effort.

FIG. 1 is a schematic diagram illustrating a 5G wireless industrial chip applied to a strong electric field environment according to an embodiment of the present application;

FIG. 2 is a schematic diagram illustrating an antenna connection reference circuit according to an embodiment of the present application;

fig. 3 is a schematic diagram illustrating a complete structure of a microstrip PCB according to an embodiment of the present application;

FIG. 4 is a schematic diagram illustrating the complete structure of a coplanar waveguide PCB according to an embodiment of the present application;

FIG. 5 shows a schematic view of the complete structure of a coplanar waveguide PCB according to another embodiment of the present application;

FIG. 6 is a schematic diagram showing the complete structure of a coplanar waveguide PCB according to another embodiment of the present application;

fig. 7 shows a schematic structural diagram of a power supply circuit of a power module according to an embodiment of the present application.

Detailed Description

Certain exemplary embodiments will now be described to provide an overall understanding of the principles of the structure, function, manufacture, and use of the devices and methods disclosed herein. One or more examples of these embodiments are illustrated in the accompanying drawings. Those of ordinary skill in the art will understand that the devices and methods specifically described herein and illustrated in the accompanying drawings are non-limiting exemplary embodiments and that the scope of the various embodiments of the present invention is defined solely by the claims. Features illustrated or described in connection with one exemplary embodiment may be combined with features of other embodiments. Such modifications and variations are intended to be included within the scope of the present invention.

Reference throughout this specification to "embodiments," "some embodiments," "one embodiment," or "an embodiment," or the like, means that a particular feature, structure, or characteristic described in connection with the embodiment is included in at least one embodiment. Thus, appearances of the phrases "in various embodiments," "in some embodiments," "in at least one other embodiment," or "in an embodiment" or the like throughout this specification are not necessarily all referring to the same embodiment. Furthermore, the particular features, structures, or characteristics may be combined in any suitable manner in one or more embodiments. Thus, the particular features, structures, or characteristics shown or described in connection with one embodiment may be combined, in whole or in part, with the features, structures, or characteristics of one or more other embodiments, without limitation. Such modifications and variations are intended to be included within the scope of the present invention.

Flow charts are used herein to illustrate operations performed by systems according to some embodiments of the present application. It should be expressly understood that the operations of the flow diagrams may be performed out of order, with precision. Rather, these operations may be performed in the reverse order or simultaneously. Also, one or more other operations may be added to the flowchart. One or more operations may be removed from the flowchart.

The 5G wireless industrial chip applied to the strong electric field environment mainly aims at the requirement of a high-quality communication system in the high-altitude strong electric field environment, and ensures that various kinds of information can be transmitted and interacted according to a plan. In the design, the core is mainly the development of an anti-interference radio frequency module, a power supply module adapting to potential change and an interface module adapting to a strong electric field environment, and the requirements of a high-quality communication system in a high-altitude strong electric field environment can be met after the functions are realized and completed.

The application provides a be applied to 5G wireless industry chip of strong electric field environment can realize covering global general 5G frequency channel, and the module size is very little, can select to dispose different memories according to product function demand, and built-in lithium battery charging circuit, built-in audio power amplifier, built-in a set of MIC biasing circuit, the design is simple, and low cost realizes the 5G communication demand under the strong electric field environment.

Fig. 1 shows a schematic structural diagram of a 5G wireless industrial chip applied to a strong electric field environment according to an embodiment of the present application.

The 5G wireless industrial chip applied to the strong electric field environment comprises a radio frequency module, a power supply module, at least one interface and a PCB.

The radio frequency module is arranged on the PCB.

In some embodiments, the 5G wireless industrial chip applied to the strong electric field environment further comprises a peripheral circuit corresponding to an antenna interface for better adjusting the performance of the radio frequency module to adapt to the strong electric field environment. For example, a pi-type matching circuit is reserved on the PCB board, and the antenna thereof is connected with the reference circuit as shown in fig. 2.

The antenna connection reference circuit comprises a pi-type matching element resistor R1, a capacitor C1 and a capacitor C2, wherein the pi-type matching element is arranged as close to the radio frequency module as possible.

The capacitor C1 and the capacitor C2 are not attached to the resistor R1 by default, and in some embodiments, the resistor R1 may be set to 0 ohm.

In some embodiments, the antenna is connected to an electrostatic discharge device in parallel with the reference circuit.

In some embodiments, the characteristic impedance of the radio frequency signal line of the radio frequency module is set to 50 Ω. The impedance of the rf signal line is generally determined by the dielectric constant of the material, the trace width (W), the ground gap (S), and the height (H) of the reference ground plane.

The control of the characteristic impedance of the PCB board generally includes two modes, namely a microstrip line and a coplanar waveguide. In order to embody the design principle, fig. 3 to fig. 6 show the structural schematic diagrams of the microstrip line and the coplanar waveguide when the characteristic impedance of the radio frequency signal line is 50 Ω.

Fig. 3 shows a schematic diagram of a complete structure of a microstrip PCB according to an embodiment of the present application.

Microstrip lines are microwave transmission lines consisting of a single conductor strip supported on a dielectric substrate. The planar structure transmission line is suitable for manufacturing microwave integrated circuits. Compared with a metal waveguide, the waveguide has the advantages of small volume, light weight, wide use frequency band, high reliability, low manufacturing cost and the like.

The thickness, width, distance from ground plane and dielectric constant of the conductor tracks determine the characteristic impedance of the microstrip line. If the thickness, width and distance from the ground plane of the wire is controllable, its characteristic impedance can also be controlled. The propagation delay time per unit length of the microstrip line depends only on the dielectric constant and is independent of the width or spacing of the lines.

In a PCB, a special printed copper wire forms an inductive microstrip. Microstrip lines generally have two functions: firstly, it can transmit high-frequency signal more effectively; and secondly, the signal output end and the load are well matched by forming a matching network with other solid devices such as an inductor, a capacitor and the like.

The characteristic impedance Z0 of the PCB is closely related to the layout and routing in the PCB design. The factors influencing the characteristic impedance of the PCB wiring are mainly as follows: the width and thickness of the copper lines, the dielectric constant and thickness of the dielectric, the thickness of the bonding pads, the path of the ground lines, the routing of the periphery, etc.

When the signal speed transmitted on the printed line exceeds 100MHz, the printed line must be regarded as a transmission line with parasitic capacitance and inductance, and skin effect and dielectric loss are generated at high frequencies, which affect the characteristic impedance of the transmission line.

In the design of characteristic impedance of PCB, there are 4 microstrip line structures most commonly used: surface microstrip (surface microstrip), embedded microstrip (embedded microstrip), stripline (stripline), and dual stripline (dual-stripline).

Fig. 3 shows that the 2-layer PCB microstrip line structure is composed of a dielectric substrate (PREPREG), a ground plane (BOTTOM) and a conductor strip.

The most commonly used materials for the dielectric substrate are 99.5% pure alumina ceramic and polyolefin or woven fiberglass materials. The trace width of the conductor strip is W, the conductor strip is arranged in the center of the upper surface (TOP) of the dielectric substrate, the distance from the conductor strip to the edge of the dielectric substrate is set to be 2W, the thickness of the dielectric substrate, namely the height of a reference ground plane is set to be H, and therefore the characteristic impedance of the radio frequency signal line is 50 omega.

The microstrip line circuit generally needs a metal packaging box, the height of the packaging box is 5-6 times larger than the thickness H of the dielectric substrate (PREPREG), and the distance between the side edges of the dielectric substrate (PREPREG) is 5-6 times larger than the width W of the conductor strip. In some embodiments, in order to reduce the reflection of electromagnetic waves by the enclosure, which affects the circuit performance, an absorbing material may be coated on the inner wall of the enclosure lid.

Fig. 4 shows a schematic diagram of a complete structure of a coplanar waveguide PCB according to an embodiment of the present application.

A central conductor strip is made on one face of a dielectric substrate and 2 ground strips are made on two sides next to the central conductor strip, thus forming a coplanar waveguide, also called a coplanar microstrip transmission line.

Coplanar waveguides propagate TEM waves without a cut-off frequency. Because the central conductor strip and the grounding strip are positioned in the same plane, the parallel installation of components on the coplanar waveguide is convenient, and a monolithic microwave integrated circuit with the transmission line and the components on the same side can be manufactured by using the coplanar waveguide.

The 2-layer PCB coplanar waveguide structure in fig. 4 is composed of a dielectric substrate (PREPREPREG), a ground plane (BOTTOM), a center conductor strip and 2 ground strips.

The trace width of the central conductor strip is W, the central conductor strip is arranged in the center of the upper surface (TOP) of the dielectric substrate, the distance between the central conductor strip and the edge of the grounding strip is S, the thickness of the dielectric substrate and the height of the reference ground plane are H, and therefore the characteristic impedance of the radio frequency signal line is 50 omega.

In a conventional coplanar waveguide, the central conductor strip is usually provided as a thin metal conducting strip, 2 ground strips are usually provided on both sides and at a close distance from the central conductor strip, the metal faces of the ground strips are semi-infinite, but their area is limited in practical processing.

Fig. 5 shows a schematic diagram of the complete structure of a coplanar waveguide PCB according to another embodiment of the present application.

The 4-Layer PCB coplanar waveguide structure is composed of a dielectric substrate (PREPREPREG), a ground plate (BOTTOM), a central conductor strip, 2 ground strips, a ground Layer 2(Layer2) and a ground Layer 3(Layer 3).

The central conductor strip is arranged at the central position of the TOP surface (TOP) of the dielectric substrate, and the width of the central conductor strip is W; the distance of the gap between the center conductor strip and the edge of the grounding strip is set as S; the thickness of the dielectric substrate, namely the height of the reference ground plane is set as H; the grounding belts of the grounding layer2 are arranged on two sides, and the distance between the grounding belts is 5W; the ground strip of the ground plane 3 is arranged to be fully covered.

Fig. 6 shows a schematic diagram of a complete structure of a coplanar waveguide PCB according to another embodiment of the present application.

The central conductor strip is arranged at the central position of the TOP surface (TOP) of the dielectric substrate, and the width of the central conductor strip is W; the distance of the gap between the center conductor strip and the edge of the grounding strip is set as S; the thickness of the dielectric substrate, namely the height of the reference ground plane is set as H; the grounding belts of the grounding layer2 are arranged on two sides, and the distance between the grounding belts is 5W; the structure of the ground layer3 is the same as that of the ground layer 2.

In some embodiments, the precise 50 Ω impedance of the rf signal line may be controlled using an impedance simulation calculation tool.

In some embodiments, the rf pin of the rf module is not thermally bonded to the GND pin, and is in sufficient contact with ground.

In some embodiments, the distance between the RF pin of the RF module and the RF connector should be as short as possible while avoiding right-angled traces, which are typically set at an included angle of 135 degrees.

In some embodiments, the signal pins are spaced from the ground by a predetermined distance when the antenna in the PCB is connected to the connector package of the reference circuit. The ground plane for reference of the radio frequency signal line is complete, and a certain amount of ground holes are added at the periphery of the signal line and the reference ground.

In some embodiments, the distance between the ground via and the signal line should be at least 2 times the trace width, i.e., 2 xW, to help improve radio frequency performance.

In some embodiments, the power supply range of the power supply module is 3.4-4.2V, and it is necessary to ensure that the input voltage is not lower than 3.4V.

To accommodate the strong electric field environment brought by VFTO, a low ESR (equivalent series resistance) filter capacitor and three ceramic capacitors are placed at the VBAT (supply voltage) pin, respectively, for example, the filter capacitors can be configured as 100uF, and the ceramic capacitors can be configured as 100nF, 33pF, and 10pF, respectively, as shown.

In some embodiments, the external power supply is connected to the module with a trace width not less than 2 mm.

The longer the VBAT trace is, the wider it should be. In some embodiments, in order to ensure the stability of the power output, a zener diode D1 with 5.1V and power of more than 0.5W can be added to the front end of the power supply.

With continued reference to fig. 1, the interface of the 5G wireless industrial chip applied to the strong electric field environment at least comprises: SIM interface, UART interface, I2C interface.

In some embodiments, the SIM interface is configured to conform to the ETSI and IMT-2000 specifications, supporting 1.8V and 2.85V (U) SIM cards, disposed on the PCB board.

Pin information of the SIM card interface is shown in table 1.

The USIM _ DETECT pin has a pin number of 43 and is used for (U) SIM card plug detection, and the F-B200GL module can support the hot plug function of the (U) SIM card and support low-level and high-level detection through the USIM _ DETECT pin.

The pin number of the USIM _ VDD pin is 1, and the USIM _ VDD pin is used for a power supply of a (U) SIM card and supports voltages of 1.8V and 2.82V;

the pin number of the USIM _ RST pin is 44, and the USIM _ RST pin is used for (U) SIM card reset signals;

pin number of USIM _ DATA pin is 45 for (U) SIM card DATA signal;

the pin number of the USIM _ CLK pin is 46, and the USIM _ CLK pin is used for (U) SIM card clock signals;

the pin number of the USIM _ GND pin is 2, which is used for (U) SIM card specific ground, as shown in table 1.

TABLE 1

The pin information of the UART interface is shown in table 2.

UART (Universal Asynchronous Receiver/Transmitter) converts data to be transmitted between serial and parallel communications. As a chip for converting a parallel input signal into a serial output signal, the UART is usually integrated into a connection of other communication interfaces.

The embodiments are embodied as a stand-alone modular chip or as a peripheral device integrated into a microprocessor. The standard signal amplitude conversion chip is generally in RS-232C specification, is matched with a standard signal amplitude conversion chip such as MAXim 232, and serves as an interface for connecting external equipment.

In some embodiments, the UART interface is configured to support a 57600bps baud rate for data transmission and AT command transfer.

The UART1_ RXD pin has a pin number of 12 and is used for receiving data, and a VDD _ EXT power domain is not suspended;

the pin number of the UART1_ TXD pin is 11, and the UART1_ TXD pin is used for data transmission, and a VDD _ EXT power domain is not suspended;

the pin number of the UART1_ CTS pin is 18, and the UART1_ CTS pin is used for clearing and sending, and is used for a VDD _ EXT power domain, and is not suspended;

the pin number of the UART1-RTS pin is 17, which is used for requesting to send data, and the VDD _ EXT power domain is not suspended.

Pin number	Pin name	/O	Description of the invention	Remarks for note
					12	UART1_RXD	I	Data reception	VDD _ EXT Power Domain, not always Floating
11	UART1_TXD	O	Data transmission	VDD _ EXT Power Domain, not always Floating
					18	UART1_CTS	O	Clear to send	VDD _ EXT Power Domain, not always Floating
17	UART1_RTS	I	Requesting to send data	VDD _ EXT Power Domain, not always Floating

TABLE 2

The pin information for the I2C interface is shown in table 3.

The I2C bus is a simple, bidirectional two-wire synchronous serial bus. It requires only two wires to transfer information between devices connected to the bus. The master device is used to initiate the bus to transfer data and generate a clock to open up the transferred devices when any addressed device is considered a slave device. The relationship of master and slave, send and receive on the bus is not constant, but depends on the direction of data transfer at the time. If the host wants to send data to the slave device, the host addresses the slave device first, then actively sends the data to the slave device, and finally the host terminates the data transmission; if the host is to receive data from a slave device, the slave device is first addressed by the master device; the host then receives the data sent from the device, and finally the host terminates the reception process. The host is responsible for generating the timing clock and terminating the data transfer.

In some embodiments, the I2C interface requires a 10K resistor pull-up.

The pin number of the I2C _ SCL pin is 21, the pin is used for an I2C serial clock and a VDD _ EXT power domain, and the pin needs to be connected with 10K for pulling up and is not suspended;

the pin number of the I2C _ SDA pin is 22, and the pin is used for I2C serial data and VDD _ EXT power domain, and needs to be connected with 10K for pulling up, and is not suspended.

TABLE 3

The application also provides a ground potential rise acquisition method of the 5G wireless industrial chip applied to the strong electric field environment.

In a strong electric field overvoltage environment, longitudinal electromotive force and ground potential rise are often close to the same phase, and the total voltage is almost the arithmetic sum of the longitudinal electromotive force and the ground potential rise, so that a root sum square (root sum) algorithm cannot be used for the 5G wireless industrial chip.

In some embodiments, the ground potential active region should have a value between the arithmetic sum and sum root, i.e., the vector sum should also be determined.

The ground potential rise is caused by VFTO, and is calculated by a simulation test, wherein the ground potential rise is calculated as follows:

(1) it is known that: the system voltage is 115KV, the reference capacity is 100MVA, and the reference current is 502A;

the positive, negative and zero sequence impedances of the fault current source are respectively expressed as:

the positive, negative and zero sequence impedances of the transmission line are respectively expressed as:

the GIS grounding resistance R is 1.5 omega, the standard value is 0.011342, and the value is 3 h 0.011342 is 0.34pu when the GIS grounding resistance R is connected into an ordering network;

the total impedance thus obtained is expressed as:

Z＝Z₁+Z₂+Z₀+3R_s＝0.314+j1.23

wherein the time constant is expressed as:

(2) the peak current (voltage) calculation VFTO current is expressed as:

the table of the effective values for single-phase grounding, regardless of the data change of the grounding resistance during the VFTO period, is as follows:

wherein the peak is expressed as:

the total current is expressed as:

when the total current reaches a maximum value

i_max＝1677+752.6＝2429.6A

The ground potential is calculated as:

u_max＝i_max*R_S＝2429.6*1.5＝3644V

the embodiment of the application has the advantages that the 5G wireless industrial chip oriented to the strong electric field environment comprises but is not limited to URRLC, EMMB and MMTC mode communication related to 5G applied to VFTO, transformer substations and other strong electric field environments, the wireless communication problem under the strong electric field environments such as VFTO can be solved, and effective communication of devices such as sensors and testing instruments is guaranteed; the system can also realize 5G communication, can exert the advantages of ultrahigh bandwidth, ultralow time delay and ultra-large scale connection, and can bear more diversified service requirements of the vertical industry.

Moreover, those skilled in the art will appreciate that aspects of the present application may be illustrated and described in terms of several patentable species or situations, including any new and useful combination of processes, machines, manufacture, or materials, or any new and useful improvement thereon. Accordingly, various aspects of the present application may be embodied entirely in hardware, entirely in software (including firmware, resident software, micro-code, etc.) or in a combination of hardware and software. The above hardware or software may be referred to as "data blocks," modules, "" engines, "" units, "" components, "or" systems. Furthermore, aspects of the present application may be represented as a computer product, including computer readable program code, embodied in one or more computer readable media.

The computer storage medium may comprise a propagated data signal with the computer program code embodied therewith, for example, on baseband or as part of a carrier wave. The propagated signal may take any of a variety of forms, including electromagnetic, optical, etc., or any suitable combination. A computer storage medium may be any computer-readable medium that can communicate, propagate, or transport a program for use by or in connection with an instruction execution system, apparatus, or device. Program code located on a computer storage medium may be propagated over any suitable medium, including radio, cable, fiber optic cable, RF, or the like, or any combination of the preceding.

Computer program code required for the operation of various portions of the present application may be written in any one or more programming languages, including an object oriented programming language such as Java, Scala, Smalltalk, Eiffel, JADE, Emerald, C + +, C #, VB.NET, Python, and the like, a conventional programming language such as C, Visual Basic, Fortran 2003, Perl, COBOL 2002, PHP, ABAP, a dynamic programming language such as Python, Ruby, and Groovy, or other programming languages, and the like. The program code may execute entirely on the user's computer, partly on the user's computer, as a stand-alone software package, partly on the user's computer and partly on a remote computer or entirely on the remote computer or server. In the latter scenario, the remote computer may be connected to the user's computer through any network format, such as a Local Area Network (LAN) or a Wide Area Network (WAN), or the connection may be made to an external computer (for example, through the Internet), or in a cloud computing environment, or as a service, such as a software as a service (SaaS).

Additionally, the order in which elements and sequences of the processes described herein are processed, the use of alphanumeric characters, or the use of other designations, is not intended to limit the order of the processes and methods described herein, unless explicitly claimed. While various presently contemplated embodiments of the invention have been discussed in the foregoing disclosure by way of example, it is to be understood that such detail is solely for that purpose and that the appended claims are not limited to the disclosed embodiments, but, on the contrary, are intended to cover all modifications and equivalent arrangements that are within the spirit and scope of the embodiments herein. For example, although the system components described above may be implemented by hardware devices, they may also be implemented by software-only solutions, such as installing the described system on an existing server or mobile device.

Similarly, it should be noted that in the preceding description of embodiments of the application, various features are sometimes grouped together in a single embodiment, figure, or description thereof for the purpose of streamlining the disclosure aiding in the understanding of one or more of the embodiments. This method of disclosure, however, is not intended to require more features than are expressly recited in the claims. Indeed, the embodiments may be characterized as having less than all of the features of a single embodiment disclosed above.

The entire contents of each patent, patent application publication, and other material cited in this application, such as articles, books, specifications, publications, documents, and the like, are hereby incorporated by reference into this application. Except where the application is filed in a manner inconsistent or contrary to the present disclosure, and except where the claim is filed in its broadest scope (whether present or later appended to the application) as well. It is noted that the descriptions, definitions and/or use of terms in this application shall control if they are inconsistent or contrary to the statements and/or uses of the present application in the material attached to this application.

Claims

1. A5G wireless industrial chip applied to a strong electric field environment is characterized by comprising:

and the at least one interface is used for configuring other components.

2. The 5G wireless industrial chip applied to a strong electric field environment according to claim 1, further comprising:

peripheral circuitry corresponding to the radio frequency module antenna interface for adjusting the performance of the radio frequency module.

3. The 5G wireless industrial chip applied to a strong electric field environment according to claim 2, wherein a pi-type matching circuit is reserved on the peripheral circuit PCB board.

4. The 5G wireless industrial chip applied to the strong electric field environment according to claim 3, wherein a pi-type matching circuit is reserved on the peripheral circuit PCB board, and the pi-type matching circuit is configured to comprise a resistor R1, a capacitor C1 and a capacitor C2.

5. The 5G wireless industrial chip applied to the strong electric field environment according to claim 1, wherein the control structure of the characteristic impedance of the PCB board comprises two modes of a microstrip line and a coplanar waveguide.

6. The 5G wireless industrial chip applied to a strong electric field environment according to claim 1, wherein the radio frequency pin of the radio frequency module is not thermally soldered to a GND pin and is in contact with the ground.

7. The 5G wireless industrial chip applied to a strong electric field environment according to claim 1, wherein right-angled traces are avoided from the RF pins of the RF module to the RF connector, and the trace angle is set to 135 degrees.

8. The 5G wireless industrial chip applied to a strong electric field environment according to claim 1, wherein a distance between the ground hole of the PCB board and the signal line is set to be 2 times or more of a trace width.

9. The 5G wireless industrial chip applied to a strong electric field environment according to claim 1, wherein the interface comprises: one or more combinations of SIM interface, UART interface, I2C interface.