CN111785844B - Light emitting device, display panel and display device - Google Patents
Light emitting device, display panel and display device Download PDFInfo
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- CN111785844B CN111785844B CN202010877446.8A CN202010877446A CN111785844B CN 111785844 B CN111785844 B CN 111785844B CN 202010877446 A CN202010877446 A CN 202010877446A CN 111785844 B CN111785844 B CN 111785844B
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- 239000000463 material Substances 0.000 claims abstract description 52
- 239000010410 layer Substances 0.000 claims description 217
- 238000002347 injection Methods 0.000 claims description 38
- 239000007924 injection Substances 0.000 claims description 38
- 230000005525 hole transport Effects 0.000 claims description 18
- 125000006850 spacer group Chemical group 0.000 claims description 11
- 239000011229 interlayer Substances 0.000 claims description 6
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 claims description 4
- 230000003287 optical effect Effects 0.000 claims description 4
- YVTHLONGBIQYBO-UHFFFAOYSA-N zinc indium(3+) oxygen(2-) Chemical compound [O--].[Zn++].[In+3] YVTHLONGBIQYBO-UHFFFAOYSA-N 0.000 claims description 3
- 230000000694 effects Effects 0.000 abstract description 7
- 230000000052 comparative effect Effects 0.000 description 10
- 238000003475 lamination Methods 0.000 description 10
- 239000000758 substrate Substances 0.000 description 4
- CUJRVFIICFDLGR-UHFFFAOYSA-N acetylacetonate Chemical compound CC(=O)[CH-]C(C)=O CUJRVFIICFDLGR-UHFFFAOYSA-N 0.000 description 3
- AWXGSYPUMWKTBR-UHFFFAOYSA-N 4-carbazol-9-yl-n,n-bis(4-carbazol-9-ylphenyl)aniline Chemical compound C12=CC=CC=C2C2=CC=CC=C2N1C1=CC=C(N(C=2C=CC(=CC=2)N2C3=CC=CC=C3C3=CC=CC=C32)C=2C=CC(=CC=2)N2C3=CC=CC=C3C3=CC=CC=C32)C=C1 AWXGSYPUMWKTBR-UHFFFAOYSA-N 0.000 description 2
- 101000837344 Homo sapiens T-cell leukemia translocation-altered gene protein Proteins 0.000 description 2
- 102100028692 T-cell leukemia translocation-altered gene protein Human genes 0.000 description 2
- 230000006978 adaptation Effects 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 238000004020 luminiscence type Methods 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000011056 performance test Methods 0.000 description 2
- 239000000243 solution Substances 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- 230000003111 delayed effect Effects 0.000 description 1
- 238000005286 illumination Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 235000012736 patent blue V Nutrition 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 238000002834 transmittance Methods 0.000 description 1
Classifications
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
- H10K50/11—OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/80—Constructional details
- H10K50/805—Electrodes
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/80—Constructional details
- H10K50/85—Arrangements for extracting light from the devices
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/80—Constructional details
- H10K50/86—Arrangements for improving contrast, e.g. preventing reflection of ambient light
Abstract
The invention provides a light emitting device, a display panel and a display apparatus, the light emitting device includes: the first electrode is a reflecting electrode; the second electrode is a semitransparent semi-reflecting electrode; the light-emitting layer is arranged between the first electrode and the second electrode, a red phosphorescence luminescent material and a blue phosphorescence luminescent material are arranged in the light-emitting layer, and red light and blue light emitted by the light-emitting layer simultaneously meet resonance generation conditions between the first electrode and the second electrode. In the light-emitting device, red light and blue light emitted by the light-emitting layer simultaneously meet resonance generation conditions between the first electrode and the second electrode, blue and red light emission is enhanced through resonance, green light emission is reduced, CIEy of white light is reduced from 0.40 to below 0.33, the full-phosphorescence device has higher device brightness and device efficiency, the display effect is improved, and the display requirement can be met.
Description
Technical Field
The invention relates to the technical field of display, in particular to a light emitting device, a display panel and a display device.
Background
Organic luminescent materials have evolved from original fluorescent materials to phosphorescent materials and recently proposed thermally activated delayed fluorescent materials with ever increasing performance, as have white OLEDs based on these materials. Currently, full-phosphorescent white light devices are mainly applied to the field of illumination, and sky blue phosphorescent materials can meet the display use requirements, but white light color points (CIE x ，CIE y ) Near (0.40), far from the white light color point (0.33 ) of the display application, the display is poor and the brightness and efficiency of the device are poor.
Disclosure of Invention
In view of the above, the present invention provides a light emitting device, a display panel, and a method of manufacturing the sameDisplay device for solving the problem of (CIE) of white light color point during application of full phosphorescence white light device x ，CIE y ) Near (0.40), far from the white light color point (0.33 ) of the display application, the display effect is poor and the brightness and efficiency of the device are not high.
In order to solve the technical problems, the invention adopts the following technical scheme:
in a first aspect, a light emitting device according to an embodiment of the present invention includes:
the first electrode is a reflecting electrode;
the second electrode is a semitransparent semi-reflecting electrode;
the light-emitting layer is arranged between the first electrode and the second electrode, a red phosphorescence luminescent material and a blue phosphorescence luminescent material are arranged in the light-emitting layer, and red light and blue light emitted by the light-emitting layer simultaneously meet resonance generation conditions between the first electrode and the second electrode.
Wherein the light emitting layer includes:
the light-emitting device comprises a first light-emitting layer, a second light-emitting layer and a third light-emitting layer, wherein the first light-emitting layer is provided with a red phosphorescent light-emitting material and a first main material;
the second light-emitting layer is provided with a blue phosphorescence luminescent material and a second main body material;
and the interlayer is arranged between the first light-emitting layer and the second light-emitting layer.
The light-emitting device further comprises a first lamination layer and a second lamination layer, wherein the first lamination layer comprises an electron injection layer and an electron transport layer, the second lamination layer comprises a hole injection layer and a hole transport layer, the electron injection layer, the electron transport layer, the second light-emitting layer, the interlayer, the first light-emitting layer, the hole transport layer and the hole injection layer are sequentially laminated on the first electrode, the first electrode is a cathode, and the second electrode is an anode.
The light-emitting device further comprises a first lamination layer and a second lamination layer, wherein the first lamination layer comprises an electron injection layer and an electron transport layer, the second lamination layer comprises a hole injection layer and a hole transport layer, the hole injection layer, the hole transport layer, the first light-emitting layer, the interlayer, the second light-emitting layer, the electron transport layer and the electron injection layer are sequentially laminated on the first electrode, the first electrode is an anode, and the second electrode is a cathode.
Wherein the first electrode comprises:
a conductive reflective layer;
the first transparent conductive layer and the second transparent conductive layer are respectively positioned on two sides of the conductive reflecting layer, and the first transparent conductive layer is adjacent to the hole injection layer.
Wherein the first transparent conductive layer and the second transparent conductive layer are respectively one of indium tin oxide or indium zinc oxide.
The first transparent conductive layer and the light-emitting layer, the first lamination layer and the second lamination layer have optical thicknesses which meet the condition that red light and blue light emitted by the light-emitting layer generate resonance.
Wherein the wavelength of blue light emitted by the light emitting layer is greater than or equal to 470nm.
In a second aspect, a display panel according to an embodiment of the present invention includes the light emitting device described in the above embodiment.
In a third aspect, a display device according to an embodiment of the present invention includes the display panel described in the above embodiment.
The technical scheme of the invention has the following beneficial effects:
according to the light-emitting device provided by the embodiment of the invention, the first electrode is a reflecting electrode, the second electrode is a semitransparent semi-reflecting electrode, the light-emitting layer is arranged between the first electrode and the second electrode, the light-emitting layer is provided with a red phosphorescent light-emitting material and a blue phosphorescent light-emitting material, and red light and blue light emitted by the light-emitting layer simultaneously meet resonance generation conditions between the first electrode and the second electrode. In the light emitting device, a resonant cavity structure can be formed between the first electrode and the second electrode, so that red light and blue light emitted by the light emitting layer generate resonance between the first electrode and the second electrode, blue and red luminescence is enhanced through resonance, green luminescence is reduced, CIEy of white light is reduced from 0.40 to below 0.33, the device brightness and device efficiency of the full-phosphorescence device are relatively high, the display effect is improved, meanwhile, the use of a charge generation layer is avoided, and transverse electric leakage is reduced.
Drawings
Fig. 1 is a schematic view of a light emitting device according to an embodiment of the present invention;
fig. 2 is another schematic structural view of a light emitting device according to an embodiment of the present invention;
fig. 3 is a schematic structural view of a light emitting device in the comparative example;
fig. 4 is a schematic diagram of a performance test curve of the light emitting device in the comparative example;
fig. 5 is a schematic diagram of a performance test curve of a light emitting device according to an embodiment of the present invention.
Reference numerals
A first electrode 10; a first transparent conductive layer 11; a second transparent conductive layer 12; a conductive reflective layer 13;
a second electrode 20;
a first light emitting layer 31; a second light emitting layer 32; a spacer layer 33; an electron injection layer 34;
an electron transport layer 35; a hole injection layer 36; a hole transport layer 37;
a substrate 40.
Detailed Description
In order to make the objects, technical solutions and advantages of the embodiments of the present invention more clear, the technical solutions of the embodiments of the present invention will be clearly and completely described below with reference to the accompanying drawings of the embodiments of the present invention. It will be apparent that the described embodiments are some, but not all, embodiments of the invention. All other embodiments, which are obtained by a person skilled in the art based on the described embodiments of the invention, fall within the scope of protection of the invention.
A light emitting device according to an embodiment of the present invention is described in detail below.
As shown in fig. 1 and 2, the light emitting device according to the embodiment of the present invention includes a first electrode 10, a second electrode 20, and a light emitting layer, wherein the first electrode 10 is a reflective electrode, the second electrode 20 is a semi-transparent semi-reflective electrode, the light emitting layer is disposed between the first electrode 10 and the second electrode 20, the light emitting layer has a red phosphorescent light emitting material and a blue phosphorescent light emitting material therein, and red light and blue light emitted from the light emitting layer simultaneously satisfy a resonance generating condition between the first electrode 10 and the second electrode 20.
That is, the light emitting device is mainly composed of the first electrode 10, the second electrode 20, and the light emitting layer, wherein the first electrode 10 may be a reflective electrode, the second electrode 20 may be a semi-transparent semi-reflective electrode, and the second electrode 20 may have a certain transmittance, for example, the reflectance of the second electrode 20 may be between 0.1% and 50%, and may be specifically and reasonably selected according to needs. The light-emitting layer can be arranged between the first electrode 10 and the second electrode 20, the light-emitting layer is provided with a red phosphorescence light-emitting material and a blue phosphorescence light-emitting material, the red phosphorescence light-emitting material can emit red light, the blue phosphorescence light-emitting material can emit blue light and a small amount of light in a green light wave band, a resonance structure can be formed between the first electrode 10 and the second electrode 20, the optical thickness of the light-emitting layer between the first electrode 10 and the second electrode 20 can meet resonance generation conditions of red light and blue light, the red light and the blue light emitted by the light-emitting layer can not generate resonance between the first electrode 10 and the second electrode 20, and the light after resonance can be emitted from the second electrode 20, the intensity of the emitted red light and the blue light can be enhanced through resonance, the light-emitting efficiency of the green light wave band in the blue phosphorescence light-emitting material is reduced, the light-emitting efficiency of the emitted green light is reduced, the CIEy of the white light is reduced from 0.40 to below 0.33, the full phosphorescence device obtains higher brightness and device efficiency, the display effect is improved, and the generation layer is used for generating charge VR is reduced, and the device is applicable to the field of transverse charge leakage.
In some embodiments of the present invention, the light emitting layer may include a first light emitting layer 31, a second light emitting layer 32, and a spacer layer 33, where the first light emitting layer 31 has a red phosphorescent light emitting material and a first host material, the second light emitting layer 32 has a blue phosphorescent light emitting material and a second host material, the first host material and the second host material may be selected according to actual needs, the first light emitting layer 31 and the second light emitting layer 32 both have phosphorescent light emitting characteristics, the spacer layer 33 is disposed between the first light emitting layer 31 and the second light emitting layer 32, and the light emission of the first light emitting layer 31 and the second light emitting layer 32 may be adjusted by the spacer layer 33.
In an embodiment of the present invention, as shown in fig. 2, the light emitting device further includes a first stack including an electron injection layer 34 and an electron transport layer 35, and a second stack including a hole injection layer 36 and a hole transport layer 37, wherein the electron injection layer 34, the electron transport layer 35, the second light emitting layer 32, the spacer layer 33, the first light emitting layer 31, the hole transport layer 37 and the hole injection layer 36 are sequentially stacked on the first electrode 10, the first electrode 10 is a cathode, and the second electrode 20 is an anode.
In some embodiments of the present invention, as shown in fig. 1, the light emitting device further includes a first stack including an electron injection layer 34 and an electron transport layer 35, and a second stack including a hole injection layer 36 and a hole transport layer 37, wherein the hole injection layer 36, the hole transport layer 37, the first light emitting layer 31, the spacer layer 33, the second light emitting layer 32, the electron transport layer 35, and the electron injection layer 34 are sequentially stacked on the first electrode 10, the first electrode 10 being an anode, and the second electrode 20 being a cathode.
Alternatively, the light emitting device may further include a substrate 40, the substrate 40 may be a glass plate, and the first electrode 10 may be disposed on the substrate 40.
In some embodiments, hole injection layer 36 may be a HATCN material, hole transport layer 37 may be an NPB material, and first light emitting layer 31 may have TCTA and Ir (MDQ) 2 acac materials, ir (MDQ) 2 The acac content may be 6%, the spacer layer 33 may be an mCP material, the second light emitting layer 32 may have an mCP and Firpic material, the Firpic content may be 8%, the electron transport layer 35 may be a Bphen material, and the electron injection layer 34 may be a LiF material.
Wherein, the structural formula of the HATCN is as follows:
the structural formula of NPB is as follows:
the structural formula of TCTA is as follows:
Ir(MDQ) 2 the structural formula of acac is as follows:
the structural formula of the mCP is as follows:
the structural formula of Firpic is as follows:
the structural formula of Bphen is as follows:
in addition, the hole injection layer 36, the hole transport layer 37, the spacer layer 33, the electron transport layer 35, and the electron injection layer 34 may be made of other materials according to actual needs.
In an embodiment of the present invention, the first electrode 10 may include a conductive reflective layer 13, a first transparent conductive layer 11, and a second transparent conductive layer 12, wherein the first transparent conductive layer 11 and the second transparent conductive layer 12 are respectively located at both sides of the conductive reflective layer 13, and the first transparent conductive layer 11 is adjacent to the hole injection layer 36. The conductive reflective layer 13 may be Ag, the first transparent conductive layer 11 and the second transparent conductive layer 12 may be one of Indium Tin Oxide (ITO) or indium zinc oxide, for example, the first transparent conductive layer 11 and the second transparent conductive layer 12 may be indium tin oxide, and the thickness of the first transparent conductive layer 11 and the second transparent conductive layer 12 may be 8nm. The second electrode 20 may be a composite material of Mg and Ag, and the thickness of the second electrode 20 may be 10nm, which may be reasonably selected according to needs.
According to some embodiments, the optical thicknesses of the first transparent conductive layer 11 and the light emitting layer, the first stack and the second stack may be set to be capable of resonating red light and blue light emitted from the light emitting layer. The sum of the thicknesses of the first transparent conductive layer 11 and the light-emitting layer can be 300-450nm, for example, 350-400nm can be selected, and the specific thickness can be reasonably selected according to actual needs.
In some embodiments of the invention, the wavelength of blue light emitted by the light emitting layer is greater than or equal to 470nm.
An embodiment of the present invention provides a display panel including the light emitting device as described in the above embodiment. The display panel with the light emitting device in the embodiment can reduce the CIEy of white light from 0.40 to below 0.33, can obtain relatively high device brightness and device efficiency, and meets the requirement of display effect.
An embodiment of the present invention provides a display device including the display panel described in the above embodiment. The display device with the display panel in the embodiment can obtain higher display brightness and device efficiency, and meets the requirement of display effect.
To further explain the performance of the light emitting device in the present invention, the light emitting device in the present invention is compared with the light emitting device in the comparative example.
Comparative example
As shown in fig. 3, the structure of the light-emitting device in the comparative example was such that an anode 61 (ITO layer), a hole injection layer 62, a hole transport layer 63, a red light-emitting layer 64, a spacer layer 65, a blue light-emitting layer 66, an electron transport layer 67, an electron injection layer 68, and a cathode 69 were laminated in this order on a glass plate 60, a red phosphorescent material was present in the red light-emitting layer 64, a blue phosphorescent material and a host material were present in the blue light-emitting layer 66, and red light and blue light emitted from the light-emitting layer in the comparative example did not resonate between the anode 61 and the cathode 69.
As shown in fig. 1, the material of the corresponding layer in the comparative example is the same as that of the light emitting layer in the embodiment of the present invention, the material of the interlayer in the comparative example is the same as that of the interlayer in the embodiment of the present invention, the material of the hole injection layer 62 is the same as that of the hole injection layer 36, the material of the hole transport layer 63 is the same as that of the hole transport layer 37, and the material of the electron injection layer and the electron transport layer in the embodiment of the present invention.
The performance of the light emitting devices in the examples of the present invention and the comparative examples was tested, and specific test results are shown in tables 1, 2 and fig. 4 and 5 below.
Table 1 Properties of the light emitting device and the CF (color film) -matched product of the comparative example
TABLE 2 product Performance after CF (color film) is matched with the light emitting device in the embodiment of the invention
As can be seen from tables 1 and 2, the light emitting devices in the embodiments of the present invention (CIE x ，CIE y ) Is (0.336,0.329) such that the CIE of white light x With CIE (CIE) y Closer to 0.33, CIE of white light y Reducing to below 0.33; in fig. 4 and 5, curve O represents Origin light, curve B represents blue light, curve G represents green light, and curve R represents red light, and as can be seen from fig. 4 and 5, the intensity of green light is reduced in the light emission of the light emitting device of the present invention, and the intensity is reducedThe light-emitting efficiency of the green light wave band is improved, the full-phosphorescence device can obtain higher device brightness and device efficiency, the display effect is improved, and the requirement of display products can be met.
Unless defined otherwise, technical or scientific terms used herein should be given the ordinary meaning as understood by one of ordinary skill in the art to which this invention belongs. The terms "first," "second," and the like, as used herein, do not denote any order, quantity, or importance, but rather are used to distinguish one element from another. The terms "connected" or "connected," and the like, are not limited to physical or mechanical connections, but may include electrical connections, whether direct or indirect. "upper", "lower", "left", "right", etc. are used merely to indicate a relative positional relationship, which changes accordingly when the absolute position of the object to be described changes.
While the foregoing is directed to the preferred embodiments of the present invention, it will be appreciated by those skilled in the art that various modifications and adaptations can be made without departing from the principles of the present invention, and such modifications and adaptations are intended to be comprehended within the scope of the present invention.
Claims (9)
1. A white light emitting device, comprising:
the first electrode is a reflecting electrode;
the second electrode is a semitransparent semi-reflecting electrode;
the light-emitting layer is arranged between the first electrode and the second electrode, a red phosphorescent light-emitting material and a blue phosphorescent light-emitting material are arranged in the light-emitting layer, and red light and blue light emitted by the light-emitting layer simultaneously meet resonance generation conditions between the first electrode and the second electrode; the intensity of the emergent red light and blue light can be enhanced through resonance, the light-emitting efficiency of a green light wave band in the blue phosphorescence luminescent material is reduced, and the efficiency of emergent green light is reduced; so that the CIEy of the white light is reduced from 0.40 to below 0.33;
the light emitting layer includes:
the light-emitting device comprises a first light-emitting layer, a second light-emitting layer and a third light-emitting layer, wherein the first light-emitting layer is provided with a red phosphorescent light-emitting material and a first main material;
the second light-emitting layer is provided with a blue phosphorescence luminescent material and a second main body material;
an interlayer disposed between the first light emitting layer and the second light emitting layer;
the sum of the thicknesses of the first conductive transparent layer and the light emitting layer in the first electrode is 300-450nm.
2. The white light-emitting device according to claim 1, further comprising a first laminate layer including an electron injection layer and an electron transport layer, and a second laminate layer including a hole injection layer and a hole transport layer, wherein the electron injection layer, the electron transport layer, the second light-emitting layer, the spacer layer, the first light-emitting layer, the hole transport layer, and the hole injection layer are sequentially laminated on the first electrode, the first electrode being a cathode, and the second electrode being an anode.
3. The white light-emitting device according to claim 1, further comprising a first laminate layer including an electron injection layer and an electron transport layer, and a second laminate layer including a hole injection layer and a hole transport layer, wherein the hole injection layer, the hole transport layer, the first light-emitting layer, the spacer layer, the second light-emitting layer, the electron transport layer, and the electron injection layer are sequentially laminated on the first electrode, the first electrode being an anode, and the second electrode being a cathode.
4. The white light emitting device according to claim 3, wherein the first electrode comprises:
a conductive reflective layer;
the first transparent conductive layer and the second transparent conductive layer are respectively positioned on two sides of the conductive reflecting layer, and the first transparent conductive layer is adjacent to the hole injection layer.
5. The white light emitting device of claim 4 wherein the first transparent conductive layer and the second transparent conductive layer are each one of indium tin oxide or indium zinc oxide.
6. The white light emitting device of claim 4 wherein the first transparent conductive layer resonates with red and blue light emitted by the light emitting layer by an optical thickness of the light emitting layer, the first stack, and the second stack.
7. The white light-emitting device according to claim 1, wherein a wavelength of blue light emitted from the light-emitting layer is 470nm or more.
8. A display panel comprising the white light emitting device according to any one of claims 1 to 7.
9. A display device comprising the display panel as claimed in claim 8.
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| CN1913194A (en) * | 2005-08-12 | 2007-02-14 | 三星Sdi株式会社 | White electroluminescent device and method of producing the same |
| CN102577618A (en) * | 2009-09-29 | 2012-07-11 | 住友化学株式会社 | Organic electroluminescent element |
| CN103107288A (en) * | 2011-11-10 | 2013-05-15 | 乐金显示有限公司 | White organic light emitting device and display device using the same |
| CN104425761A (en) * | 2013-08-30 | 2015-03-18 | 乐金显示有限公司 | White organic light emitting diode and display device using the same |
| CN104659241A (en) * | 2015-01-20 | 2015-05-27 | 北京鼎材科技有限公司 | Top-emitting white light organic light emitting device |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7663309B2 (en) * | 2006-09-28 | 2010-02-16 | Fujifilm Corporation | Organic electroluminescent element having plurality of light emitting layers with specific thicknesses |
| JP6157804B2 (en) * | 2011-04-29 | 2017-07-05 | 株式会社半導体エネルギー研究所 | Light emitting element |
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- 2020-08-27 CN CN202010877446.8A patent/CN111785844B/en active Active
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1913194A (en) * | 2005-08-12 | 2007-02-14 | 三星Sdi株式会社 | White electroluminescent device and method of producing the same |
| CN102577618A (en) * | 2009-09-29 | 2012-07-11 | 住友化学株式会社 | Organic electroluminescent element |
| CN103107288A (en) * | 2011-11-10 | 2013-05-15 | 乐金显示有限公司 | White organic light emitting device and display device using the same |
| CN104425761A (en) * | 2013-08-30 | 2015-03-18 | 乐金显示有限公司 | White organic light emitting diode and display device using the same |
| CN104659241A (en) * | 2015-01-20 | 2015-05-27 | 北京鼎材科技有限公司 | Top-emitting white light organic light emitting device |
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