CN111785712A - Unbiased quantum entropy source chip structure - Google Patents
Unbiased quantum entropy source chip structure Download PDFInfo
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- CN111785712A CN111785712A CN202010661921.8A CN202010661921A CN111785712A CN 111785712 A CN111785712 A CN 111785712A CN 202010661921 A CN202010661921 A CN 202010661921A CN 111785712 A CN111785712 A CN 111785712A
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/16—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof the devices being of types provided for in two or more different main groups of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. forming hybrid circuits
- H01L25/167—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof the devices being of types provided for in two or more different main groups of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. forming hybrid circuits comprising optoelectronic devices, e.g. LED, photodiodes
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- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04B—TRANSMISSION
- H04B10/00—Transmission systems employing electromagnetic waves other than radio-waves, e.g. infrared, visible or ultraviolet light, or employing corpuscular radiation, e.g. quantum communication
- H04B10/70—Photonic quantum communication
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- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04L—TRANSMISSION OF DIGITAL INFORMATION, e.g. TELEGRAPHIC COMMUNICATION
- H04L9/00—Cryptographic mechanisms or cryptographic arrangements for secret or secure communications; Network security protocols
- H04L9/08—Key distribution or management, e.g. generation, sharing or updating, of cryptographic keys or passwords
- H04L9/0816—Key establishment, i.e. cryptographic processes or cryptographic protocols whereby a shared secret becomes available to two or more parties, for subsequent use
- H04L9/0852—Quantum cryptography
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- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04L—TRANSMISSION OF DIGITAL INFORMATION, e.g. TELEGRAPHIC COMMUNICATION
- H04L9/00—Cryptographic mechanisms or cryptographic arrangements for secret or secure communications; Network security protocols
- H04L9/08—Key distribution or management, e.g. generation, sharing or updating, of cryptographic keys or passwords
- H04L9/0861—Generation of secret information including derivation or calculation of cryptographic keys or passwords
- H04L9/0869—Generation of secret information including derivation or calculation of cryptographic keys or passwords involving random numbers or seeds
Abstract
The invention discloses an unbiased quantum entropy source chip structure which comprises a chip substrate material, wherein a balance detector module and a semiconductor spontaneous radiation source module are arranged on the chip substrate material, and spontaneous radiation beams emitted by the two semiconductor spontaneous radiation source modules respectively enter the input end of one balance detector module. According to the invention, because the two semiconductor spontaneous radiation modules are positioned on the same chip, when the external environment of the chip changes, the parameter changes of the two semiconductor spontaneous radiation modules can be considered to be the same, and the unbiased characteristic of signal distribution after difference can be ensured.
Description
Technical Field
The invention relates to the technical field of semiconductor chips, in particular to an unbiased quantum entropy source chip structure.
Background
Random numbers are one of the important resources of cryptography, and in both classical cryptography and quantum cryptography, their randomness requirements on random numbers are very strict, and even directly determine the security of most cryptosystems. In addition, random numbers are also used extensively outside of cryptography, and play a very important role in gambling, sample statistics, Monte-Carlo simulations, and in some computing sciences.
The device or module that generates the random number is referred to as a random number generator, and its core devices are referred to as entropy sources. The entropy source is the source of randomness of the random number generator, whose quality directly determines the quality of the final output random number sequence. At present, the generation methods of random numbers can be divided into two main categories according to the characteristics of entropy sources: pseudo-random number generators and physical random number generators. The random number generator can stably output a pseudo-random number sequence at a very fast speed, and the algorithm ensures that the output sequence has certain statistical characteristics and meets a typical randomness test. But also because the pseudo-random number is generated based on a deterministic algorithm, the source of randomness is only the randomness of the input seed, so when it is used frequently, it can be predicted by performing statistical analysis on the generated random numbers. Therefore, in the application of information security or passwords, the inherent certainty of the algorithm random number is easy to be utilized by an attacker.
The physical random numbers are different from each other, and the randomness of the physical random numbers is based on entropy sources of non-deterministic objective physical phenomena, such as atmospheric noise, electronic noise, circuit jitter and the like, and the random number generators generate random numbers by detecting the results of the physical phenomena. Meanwhile, if the physical phenomena are quantum phenomena, the physical entropy sources are called quantum entropy sources, and the physical phenomena comprise vacuum fluctuation, phase noise, radiative decay and other equivalent quantum physical processes. Due to quantum mechanical intrinsic randomness in a quantum physical process, a quantum random number is generally considered to have true randomness and cannot be predicted, and the quantum random number is an ideal random number generator, and the true random property of the random number generator plays a very critical role in the field of information security. However, the conventional quantum random number generator is generally a system based on discrete components, and some random number systems use bulky and expensive devices including a quantum entanglement source, a single photon detector and the like, so that the conventional quantum random number generator has the problems of large volume, high power consumption, high price and the like, and thus has not been widely applied so far.
Disclosure of Invention
The invention aims to provide an unbiased quantum entropy source chip structure, which can keep unbiased property under the condition of external environment change, so that the unbiased quantum entropy source chip structure is more suitable for various application environments, compared with the traditional quantum entropy source, the price and the volume are greatly reduced, a low-cost, high-stability and small-volume quantum random number generator can be finally realized, and the problems in the background technology can be solved.
In order to achieve the above object, in one aspect, the present invention provides an unbiased quantum entropy source chip structure, which includes a chip substrate material, a balanced detector module and a semiconductor spontaneous radiation source module are disposed on the chip substrate material, and spontaneous radiation beams emitted by the two semiconductor spontaneous radiation source modules respectively enter an input end of one balanced detector module.
Preferably, the balanced detector module includes two photodetectors, the two photodetectors respectively receive the spontaneous radiation beams emitted by the two semiconductor spontaneous radiation source modules and form two current signals, and the balanced detector module subtracts the two current signals and outputs a differential signal.
Preferably, the semiconductor spontaneous radiation source module is a light source module capable of generating an amplified spontaneous radiation beam.
Preferably, the semiconductor spontaneous radiation source module is a semiconductor optical amplifier or a superluminescent light emitting diode.
Preferably, the semiconductor radiation source device further comprises a driving circuit module, a transimpedance amplifier module, an analog-digital conversion module, a post-processing module and a random number output interface, wherein the driving circuit module is electrically connected with the semiconductor radiation source module, and the balance detector module, the transimpedance amplifier module, the analog-digital conversion module, the post-processing module and the random number output interface are sequentially electrically connected.
Preferably, the chip substrate material comprises silicon-based silicon dioxide, a III-V semiconductor material and silicon oxynitride.
The invention also provides an unbiased quantum entropy source chip structure which comprises a chip substrate material, wherein the chip substrate material is provided with a photoelectric detector module and a semiconductor spontaneous radiation source module, and spontaneous radiation beams emitted by the two semiconductor spontaneous radiation source modules respectively enter the input ends of two different photoelectric detector modules.
Preferably, the semiconductor radiation source module further comprises a driving circuit module, a current difference module, a transimpedance amplifier module, an analog-digital conversion module, a post-processing module and a random number output interface, wherein the driving circuit module is electrically connected with the semiconductor radiation source module, and the photoelectric detector module, the current difference module, the transimpedance amplifier module, the analog-digital conversion module, the post-processing module and the random number output interface are sequentially electrically connected.
Preferably, the current differential module performs differential operation on photocurrent signals output by the two photodetector modules to form a differential current.
Compared with the prior art, the invention has the following beneficial effects:
(1) according to the invention, because the two semiconductor spontaneous radiation modules are positioned on the same chip, when the external environment of the chip changes, the parameter changes of the two semiconductor spontaneous radiation modules can be considered to be the same, so that the unbiased characteristic of the signal distribution after the difference can be still ensured at the moment.
(2) The differential signal generated by the invention is distributed in an unbiased normal state with an expected value of 0, which is beneficial to the subsequent analog signal acquisition, and meanwhile, the invention has good resistance to environmental changes including the external temperature of the chip and the like, compared with the traditional quantum entropy source, the price and the volume are greatly reduced, and the quantum random number generator with low cost, high stability and small volume can be finally realized.
Drawings
FIG. 1 is a schematic structural diagram of an unbiased quantum entropy source chip structure according to a first embodiment of the present invention;
FIG. 2 is another schematic structural diagram of an unbiased quantum entropy source chip structure according to a first embodiment of the invention;
fig. 3 and 4 are schematic structural diagrams of a balanced detector module according to a first embodiment of the invention;
FIG. 5 is a beam intensity profile of a spontaneous radiation beam of the semiconductor spontaneous radiation source module of the present invention;
FIG. 6 is a schematic diagram of a differential signal of the present invention;
FIG. 7 is a diagram of the signal processed by the analog-to-digital conversion module according to the present invention;
FIG. 8 is a structural diagram of an unbiased quantum entropy source chip structure according to a second embodiment of the invention;
fig. 9 is another structural diagram of an unbiased quantum entropy source chip structure according to a second embodiment of the invention.
Detailed Description
The technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the drawings in the embodiments of the present invention, and it is obvious that the described embodiments are only a part of the embodiments of the present invention, and not all of the embodiments. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.
First embodiment
Fig. 1 shows a schematic structural diagram of an unbiased quantum entropy source chip structure of this embodiment, where the unbiased quantum entropy source chip structure of this embodiment includes a chip substrate material, a balanced detector module and a semiconductor spontaneous radiation source module are disposed on the chip substrate material, and spontaneous radiation beams emitted by the two semiconductor spontaneous radiation source modules respectively enter an input end of one balanced detector module.
The semiconductor spontaneous radiation source module comprises a Semiconductor Optical Amplifier (SOA), a super-radiation light emitting diode (SLED) and the like, and can generate amplified spontaneous radiation beams. By appropriate current driving of the module, it can be made to emit an amplified spontaneous radiation beam. The general structure of the device is an on-chip semiconductor quantum well structure, and a suitable DBR mirror is fabricated near the quantum well structure according to specific light source parameters.
A Balanced Photodetector (BPD) is a detector structure widely used at a decoding end of coherent optical communication, and a typical schematic diagram thereof is shown in fig. 3 and 4, and generally consists of two Photodetectors (PINs), and current signals generated by the two PINs are subtracted to output corresponding differential signals. In fig. 3 and 4, the broken line indicates the light beam input, the solid line indicates the electrical connection line, and the black box indicates the electrode Pad.
The unbiased quantum entropy source chip structure is a chip manufactured by manufacturing a plurality of optical devices on the same chip substrate by using a photon integration technology and through methods of etching, laser direct writing and the like and connecting the optical devices with each other through optical waveguides, or a chip manufactured by manufacturing different optical devices on a plurality of material substrates and then in a mixed packaging mode. Typical chip substrate materials include silicon-based silicon dioxide, iii-v semiconductor materials, silicon oxynitride, and other optical chip materials.
Fig. 1 shows another schematic structural diagram of the unbiased quantum entropy source chip structure of this embodiment, and the unbiased quantum entropy source chip structure further includes a driving circuit module, a transimpedance amplifier module, an analog-to-digital conversion module, a post-processing module, and a random number output interface, where the driving circuit module is electrically connected to the semiconductor spontaneous radiation source module, and the balanced detector module, the transimpedance amplifier module, the analog-to-digital conversion module, the post-processing module, and the random number output interface are electrically connected in sequence.
The trans-impedance amplifier module is used for properly amplifying the differential current signal so as to meet the requirement of a subsequent analog-digital conversion module on a sampling analog signal;
the analog-digital conversion module generally comprises electronic structures such as a comparator, a DAC (digital-to-analog converter) and the like, and converts an analog entropy source signal into a corresponding digital signal;
the post-processing module is used for extracting and generating a random number sequence from the digital signal transmitted by the analog-digital conversion module through a specific post-processing program, and outputting the random number sequence to a random number output interface, and the post-processing module generally comprises processing chips such as an ASIC (application specific integrated circuit) chip or an FPGA (field programmable gate array) chip and the like;
the random number output interface outputs the random number sequence generated by the post-processing module for the user to use, and the general output interface comprises a network port, a PCI-e interface, a USB interface and other common data interfaces.
The working process of the embodiment is as follows:
the semiconductor spontaneous radiation source module can generate amplified spontaneous radiation beams under the current drive of the drive circuit module. The light beam has a wide spectral line width and can generally reach a terahertz magnitude. Spontaneous emission is a semiconductor light-emitting process with random intensity noise that is derived from photon emission by random transitions of atoms and subsequently amplified in the semiconductor structure to detectable intensity noise. The beam intensity distribution of the single amplified spontaneous radiation source is a normal distribution as shown in fig. 5.
And 2, under the same material, the two spontaneous radiation sources on the same chip have good consistency, the distribution of the spontaneous radiation is very close, two beams of spontaneous radiation beams with close distribution respectively enter the BPD, the photodiode converts the light intensity fluctuation of the beams into current fluctuation in the BPD, then the difference is carried out in the chip, and the signal after the difference is unbiased positive state distribution with the expected value of 0, as shown in FIG. 6.
And 3, the differential current signal enters a trans-impedance amplifier module, the trans-impedance amplifier module converts the differential current signal into a voltage signal, and the voltage signal is reasonably amplified according to a level value required by a subsequent analog-digital conversion module.
4, the analog-to-digital conversion module converts the acquired analog voltage signal into a digital signal through single or multiple comparisons as shown in fig. 7, where in fig. 7, taking the comparator as an example, a signal greater than 0 level is denoted as a digital signal 1, and a signal smaller than 0 level is denoted as a digital signal 0.
And 5, the post-processing module performs post-processing on the processed digital signal according to a pre-programmed post-processing algorithm, extracts and generates a random number sequence, and then sends the random number sequence to a random number output interface. The post-processing algorithm generally comprises a random number compression algorithm such as a continuous exclusive OR (XOR), an m-LSB (least significant bit) algorithm, an SHA256 algorithm and the like.
And 6, outputting the random number sequence by a random number output interface for a user to use.
Because the two semiconductor spontaneous radiation modules are positioned on the same chip, when the external environment of the chip changes, the parameter changes of the two semiconductor spontaneous radiation modules can be considered to be the same, and therefore, the unbiased characteristic of the signal distribution after the difference can still be ensured at the moment.
Second embodiment
Fig. 8 shows a schematic structural diagram of an unbiased quantum entropy source chip structure of this embodiment, which is different from the first embodiment in that two photo-detection modules are used to replace the balanced detector module in the first embodiment, so in order to implement the difference between two photocurrents, a corresponding current differential operation needs to be performed in a driving circuit outside the entropy source chip to form a structure similar to the balanced detector module in the first embodiment.
Fig. 9 shows another structural schematic diagram of the unbiased quantum entropy source chip structure of this embodiment, which is a quantum random number generator structure including the unbiased quantum entropy source chip structure, and is different from the first embodiment in that a current differential module is arranged between the unbiased quantum entropy source chip structure and the transimpedance amplifier module, and the current differential module performs differential operation on photocurrents collected by the two photodetector modules to extract corresponding differential currents.
The working process of the embodiment is as follows:
the semiconductor spontaneous radiation source module can generate amplified spontaneous radiation beams under the current drive of the drive circuit module. The light beam has a wide spectral line width and can generally reach a terahertz magnitude. Spontaneous emission is a semiconductor light-emitting process with random intensity noise that is derived from photon emission by random transitions of atoms and subsequently amplified in the semiconductor structure to detectable intensity noise. The beam intensity distribution of the single amplified spontaneous emission source is a normal distribution.
And 2, under the same material, the two spontaneous radiation sources on the same chip have good consistency, the distribution of the spontaneous radiation is very close, and the parameters of the photoelectric detection modules in the same optical chip are basically close to the same. Two beams of spontaneous radiation beams with close distribution respectively enter two photoelectric detection modules, and the photoelectric detection modules convert beam energy into current fluctuation and output the current fluctuation to the off-chip current difference module.
And 3, the current difference module performs difference operation on the photocurrents emitted by the two photoelectric detection modules to generate a difference current.
The subsequent operation is the same as that of the first embodiment, and will not be described herein.
It will be evident to those skilled in the art that the invention is not limited to the details of the foregoing illustrative embodiments, and that the present invention may be embodied in other specific forms without departing from the spirit or essential attributes thereof. The present embodiments are therefore to be considered in all respects as illustrative and not restrictive, the scope of the invention being indicated by the appended claims rather than by the foregoing description, and all changes which come within the meaning and range of equivalency of the claims are therefore intended to be embraced therein. Any reference sign in a claim should not be construed as limiting the claim concerned.
Furthermore, it should be understood that although the present description refers to embodiments, not every embodiment may contain only a single embodiment, and such description is for clarity only, and those skilled in the art should integrate the description, and the embodiments may be combined as appropriate to form other embodiments understood by those skilled in the art.
Claims (9)
1. The unbiased quantum entropy source chip structure is characterized by comprising a chip substrate material, wherein a balance detector module and a semiconductor spontaneous radiation source module are arranged on the chip substrate material, and spontaneous radiation beams emitted by the two semiconductor spontaneous radiation source modules respectively enter the input end of one balance detector module.
2. The unbiased quantum entropy source chip structure of claim 1, wherein the balanced detector module includes two photodetectors, and the two photodetectors respectively receive the spontaneous radiation beams emitted by the two semiconductor spontaneous radiation source modules and form two current signals, and the balanced detector module subtracts the two current signals and outputs a differential signal.
3. The unbiased quantum entropy source chip structure of claim 1, further comprising a driving circuit module, a transimpedance amplifier module, an analog-to-digital conversion module, a post-processing module, and a random number output interface, wherein the driving circuit module is electrically connected to the semiconductor spontaneous radiation source module, and the balanced detector module, the transimpedance amplifier module, the analog-to-digital conversion module, the post-processing module, and the random number output interface are electrically connected in sequence.
4. The unbiased quantum entropy source chip structure is characterized by comprising a chip substrate material, wherein a photoelectric detector module and a semiconductor spontaneous radiation source module are arranged on the chip substrate material, and spontaneous radiation beams emitted by the two semiconductor spontaneous radiation source modules respectively enter the input ends of the two different photoelectric detector modules.
5. The unbiased quantum entropy source chip structure of claim 4, further comprising a driving circuit module, a current difference module, a transimpedance amplifier module, an analog-to-digital conversion module, a post-processing module, and a random number output interface, wherein the driving circuit module is electrically connected to the semiconductor spontaneous radiation source module, and the photodetector module, the current difference module, the transimpedance amplifier module, the analog-to-digital conversion module, the post-processing module, and the random number output interface are electrically connected in sequence.
6. The unbiased quantum entropy source chip structure of claim 5, wherein the current difference module performs a difference operation on the photocurrent signals output by the two photo-detector modules to form a difference current.
7. An unbiased quantum entropy source chip structure according to claim 1 or 4, wherein the semiconductor spontaneous radiation source module is a light source module capable of generating an amplified spontaneous radiation beam.
8. The unbiased quantum entropy source chip structure of claim 7, wherein the semiconductor spontaneous radiation source module is a semiconductor optical amplifier or a super-radiation light emitting diode.
9. The unbiased quantum entropy source chip structure according to claim 1 or 4, wherein the chip base material includes silicon-based silicon dioxide, iii-v semiconductor material, silicon oxynitride.
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| CN202010661921.8A CN111785712A (en) | 2020-07-10 | 2020-07-10 | Unbiased quantum entropy source chip structure |
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Application publication date: 20201016 |