CN111778559B - Graphite disc turnover type GaN single crystal substrate laser pre-stripping integrated cavity - Google Patents
Graphite disc turnover type GaN single crystal substrate laser pre-stripping integrated cavity Download PDFInfo
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- CN111778559B CN111778559B CN202010823206.XA CN202010823206A CN111778559B CN 111778559 B CN111778559 B CN 111778559B CN 202010823206 A CN202010823206 A CN 202010823206A CN 111778559 B CN111778559 B CN 111778559B
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- 239000013078 crystal Substances 0.000 title claims abstract description 84
- 239000000758 substrate Substances 0.000 title claims abstract description 77
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 title claims abstract description 58
- 229910002804 graphite Inorganic materials 0.000 title claims abstract description 58
- 239000010439 graphite Substances 0.000 title claims abstract description 58
- 230000007306 turnover Effects 0.000 title claims abstract description 36
- 238000012546 transfer Methods 0.000 claims abstract description 54
- 238000004321 preservation Methods 0.000 claims abstract description 32
- 238000002248 hydride vapour-phase epitaxy Methods 0.000 claims abstract description 24
- 238000010438 heat treatment Methods 0.000 claims abstract description 15
- 239000011261 inert gas Substances 0.000 claims abstract description 13
- 239000012782 phase change material Substances 0.000 claims abstract description 7
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 claims description 76
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 39
- 238000007789 sealing Methods 0.000 claims description 23
- 238000009413 insulation Methods 0.000 claims description 21
- 239000011521 glass Substances 0.000 claims description 15
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 14
- 238000001816 cooling Methods 0.000 claims description 12
- 230000007246 mechanism Effects 0.000 claims description 12
- 230000008859 change Effects 0.000 claims description 10
- 230000001681 protective effect Effects 0.000 claims description 8
- 239000000523 sample Substances 0.000 claims description 6
- 238000006243 chemical reaction Methods 0.000 claims description 4
- 238000009826 distribution Methods 0.000 claims description 4
- 238000000034 method Methods 0.000 abstract description 21
- 230000008569 process Effects 0.000 abstract description 16
- 238000001179 sorption measurement Methods 0.000 abstract description 6
- 230000005540 biological transmission Effects 0.000 abstract description 4
- 229910052594 sapphire Inorganic materials 0.000 abstract description 4
- 239000010980 sapphire Substances 0.000 abstract description 4
- 230000007613 environmental effect Effects 0.000 abstract description 3
- 230000035772 mutation Effects 0.000 abstract 1
- 229910002601 GaN Inorganic materials 0.000 description 67
- 238000005485 electric heating Methods 0.000 description 11
- 210000000078 claw Anatomy 0.000 description 3
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 238000002360 preparation method Methods 0.000 description 2
- 229910000838 Al alloy Inorganic materials 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 230000004075 alteration Effects 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000003139 buffering effect Effects 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 238000005336 cracking Methods 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000000407 epitaxy Methods 0.000 description 1
- 238000009434 installation Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 238000004377 microelectronic Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000001451 molecular beam epitaxy Methods 0.000 description 1
- 230000005693 optoelectronics Effects 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 230000002441 reversible effect Effects 0.000 description 1
- 238000012552 review Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/10—Inorganic compounds or compositions
- C30B29/40—AIIIBV compounds wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or Bi
- C30B29/403—AIII-nitrides
- C30B29/406—Gallium nitride
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
- C30B25/02—Epitaxial-layer growth
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
- C30B25/02—Epitaxial-layer growth
- C30B25/18—Epitaxial-layer growth characterised by the substrate
- C30B25/186—Epitaxial-layer growth characterised by the substrate being specially pre-treated by, e.g. chemical or physical means
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Inorganic Chemistry (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Abstract
The invention discloses a graphite disc turnover type GaN single crystal substrate laser pre-stripping integrated cavity, which adopts a heat preservation tray containing phase change materials to realize heat preservation of a graphite disc, and can maintain the high temperature of the heat preservation tray above 700 ℃ within a certain time, so that the probability of growth quality problem of a GaN single crystal substrate sheet caused by temperature mutation or too low temperature is obviously reduced, and the growth quality of the GaN single crystal is improved; the integrated chamber is connected with the HVPE equipment, the inside of the chamber can realize a certain vacuum degree or filling inert gas, and has the functions of heating and heat preservation, so that the environmental atmosphere of the GaN single crystal substrate slice in the whole transfer process can be ensured, and the growth quality of the GaN single crystal substrate in the subsequent process is ensured; the transfer tray with the heat preservation function is adopted to transfer the GaN single crystal substrate slices in the heat preservation tray in the integrated cavity in a full-tray manner, so that the sapphire substrate faces of all the GaN single crystal slices are upward, the Bernoulli adsorption transmission mode can be canceled, and the laser pre-stripping efficiency of the GaN single crystal substrate slices can be remarkably improved.
Description
Technical Field
The invention belongs to the technical field of GaN single crystal substrate preparation, and particularly relates to a graphite disc turnover type GaN single crystal substrate laser pre-stripping integrated cavity.
Background
Gallium nitride (GaN) is a third generation semiconductor material widely used in the fields of microelectronic devices and optoelectronic devices. GaN is prepared mainly based on Metal Organic Chemical Vapor Deposition (MOCVD), chemical vapor epitaxy (HVPE), molecular Beam Epitaxy (MBE), and other processes. The MOCVD growth of GaN mostly adopts sapphire as a growth substrate, but the HVPE method is commonly used for growing single crystal GaN with larger size due to the characteristic of high growth rate. The method adopts MOCVD to grow a GaN template, then adopts an HVPE method to thicken the GaN template, and finally adopts laser to peel off (LLO) GaN thick film, which becomes the main process for preparing the current GaN single crystal substrate. In both MOCVD and HVPE processes, the growth of GaN single crystal substrates needs to be performed in a high temperature (up to 1100 ℃ in HVPE) environment, and how to transfer GaN single crystal substrate pieces between processes and ensure the surface quality thereof is one of the key problems to be solved in GaN single crystal substrate preparation.
Through market research and document data review, the current common method is to adopt a round graphite tray to bear a GaN single crystal substrate slice, and adopt an independent transfer cavity to transfer the graphite tray, namely, adopt a mechanical arm to take the graphite tray bearing the GaN single crystal slice out of MOCVD (or HVPE) equipment and transfer the graphite tray into the independent transfer cavity, then move the independent transfer cavity to the other equipment (such as LLO equipment), and then transfer the graphite disc out for the next procedure. The independent transfer cavity has a local heat preservation function, but is not provided with a mechanical arm, and the mechanical arm is arranged in peripheral equipment (such as MOCVD, HVPE, LLO and other process equipment). The graphite tray can resist high temperature above 1100 ℃, and one graphite tray can bear twenty pieces of GaN single crystal substrates, so that the production efficiency can be improved. However, due to the adoption of the independent transfer cavity, the GaN single crystal substrate slice generally needs to undergo temperature change processes such as cooling, heat preservation, heating and the like when the graphite tray is transferred and transported. The temperature abrupt change easily causes breakage of the GaN single crystal, and the excessively low temperature (< 700 ℃) of the GaN single crystal substrate sheet is unfavorable for uniformity of growth of the GaN single crystal. The adoption of the graphite tray and the independent transfer cavity mode can not ensure that the GaN single crystal substrate slice keeps a certain high temperature and the temperature is more than or equal to 700 ℃ in the transfer process, increases the probability of exposing the GaN single crystal substrate slice in the atmosphere environment in the process of taking and placing the graphite tray, reduces the surface quality of the GaN single crystal substrate slice, and influences the final growth quality.
In addition, laser pre-stripping (LLO) is required to irradiate the back surface (sapphire substrate surface) of the GaN single crystal substrate sheet, most of the LLO processes at present adopt a mechanical arm to take out the GaN single crystal substrate sheet from the graphite disc in a bernoulli adsorption transmission mode because the graphite disc is opaque, and the GaN single crystal substrate sheet on the whole graphite disc cannot be subjected to centralized operation after the LLO process is completed and then is put back to the corresponding station of the graphite disc, so that the efficiency is low. Moreover, the Bernoulli air pressure adsorption mode is adopted to easily bring local temperature drop to the adsorbed GaN single crystal substrate slice, so that the probability of lattice mismatch or breakage of the GaN single crystal substrate slice is increased, and the growth quality is influenced.
Summarizing: firstly, a round graphite tray without an independent heat preservation function is adopted in a traditional mode, and when the GaN single crystal substrate carried on the round graphite tray is transmitted between different process equipment, quality problems such as lattice mismatch, cracking and the like are easily caused by environmental temperature change, so that the growth quality of the GaN single crystal substrate in a subsequent process is affected.
And secondly, an independent transfer cavity is adopted to transfer the graphite tray, the graphite tray is required to undergo complex temperature change environments such as cooling, heat preservation, heating and the like, the quality problem of the GaN single crystal substrate slice caused by temperature change is increased, and meanwhile, the probability that the GaN single crystal substrate slice is exposed in the atmosphere environment is also increased, so that the final growth quality of the GaN single crystal substrate is affected.
Finally, most laser pre-stripping processes adopt a mechanical arm to take out a piece of GaN single crystal substrate slice from a graphite disc in a Bernoulli adsorption transmission mode, and the GaN single crystal substrate slice is put back to a corresponding station of the graphite disc after single-chip laser pre-stripping, so that concentrated operation on the GaN single crystal substrate slice on the whole graphite disc cannot be realized, and the efficiency is low; and the Bernoulli air pressure adsorption mode is easy to bring local temperature drop to the adsorbed GaN single crystal substrate slice, so that the probability of lattice mismatch or breakage of the GaN single crystal substrate slice is increased, and the growth quality is influenced.
Therefore, the laser pre-stripping integrated cavity of the graphite disc turnover type GaN single crystal substrate is required to be developed to solve the problems.
Disclosure of Invention
In order to solve the problems in the background technology, the invention provides a graphite disc turnover type GaN single crystal substrate laser pre-stripping integrated cavity.
In order to achieve the above purpose, the present invention provides the following technical solutions:
the utility model provides a graphite dish flip-flop type GaN single crystal substrate laser is peeled off integrated cavity in advance, includes:
A cavity housing;
A turnover mechanism; the actuating output end of the turnover mechanism is connected with the cavity shell and is used for turnover driving of the cavity shell;
HVPE channel connecting cylinder; the inside of the cavity shell is connected with HVPE equipment through an HVPE channel connecting cylinder;
a camera positioning window and a laser pre-stripping window; the camera positioning window and the laser pre-stripping window are both arranged on the cavity shell;
The transfer tray module is used for realizing station conversion of the transfer tray between a tray station and a laser pre-stripping station; the transfer tray module is arranged on the cavity shell, the actuating part of the transfer tray module is arranged in the cavity shell, and the actuating part of the transfer tray module is connected with the transfer tray;
A tray station module; the tray station module comprises a fixing module for clamping and releasing the heat-preserving tray, a rotating module for rotating the fixing module and the heat-preserving tray, and a lifting module for lifting and controlling the heat-preserving tray, the fixing module and the rotating module;
The GaN wafer grooves on the transfer tray are in one-to-one correspondence with the GaN wafer grooves on the surface of the heat preservation tray, and are used for receiving all GaN single crystal substrate slices on the heat preservation tray in a whole tray.
The tilting mechanism includes:
a turnover shaft supporting seat;
A bearing A; the bearing A is arranged in the turnover shaft supporting seat;
Overturning the driving shaft; the bearing A is sleeved on the overturning driving shaft, and one end of the overturning driving shaft is connected with the first end of the cavity shell.
Specifically, the tilting mechanism further includes:
the channel is connected with the supporting seat;
A bearing B; the bearing B is arranged in the channel connecting supporting seat; the bearing B is sleeved on the second end of the cavity shell; the turnover shaft supporting seat and the channel connecting supporting seat are both arranged on the base.
The transfer tray module includes:
a motor A; the motor A is arranged on the outer wall of the cavity shell;
Balancing weight;
A rotating arm; the balancing weight and the rotating arm are both arranged in the cavity shell, the rotating shaft of the motor A penetrates through the cavity shell and then is connected with the rotating arm, and two ends of the rotating arm are respectively connected with the balancing weight and the transfer tray; when the rotating arm rotates to the first position, the distribution position and the state of the GaN single crystal substrate slice on the surface of the whole heat preservation tray in the LLO integrated cavity are observed in real time through the external camera at the camera positioning window; when the rotating arm rotates to the second position, the laser equipment probe is externally arranged at the laser pre-peeling window, so that the laser is led into the transfer tray through the laser pre-peeling window, and the GaN single crystal substrate slice is pre-peeled.
Specifically, the relay tray includes:
water-cooling protective cover;
An electric heating plate;
a graphite plate;
a water circulation chamber;
Wherein, a water inlet channel, a water outlet channel and a cable channel are arranged in the rotating arm; the first end of the water inlet channel, the first end of the water outlet channel and the first end of the cable channel are all communicated with the outside, the second end of the water inlet channel and the second end of the water outlet channel are respectively connected with the water inlet end and the water outlet end of the water circulation cavity, the cable is arranged in the cable channel and is electrically connected with the electric heating disc, and the water cooling protective cover and the electric heating disc are all connected with the graphite disc in a heat transfer mode.
Specifically, the camera positioning window comprises transparent quartz glass A and a glass fixing block A, and the quartz glass A is fixed on the cavity shell through the glass fixing block A;
The laser pre-stripping window comprises transparent quartz glass B and a glass fixing block B, and the quartz glass B is fixed on the cavity shell through the glass fixing block B.
The fixing module comprises a three-jaw chuck moving block, a claw, a three-jaw chuck frame, a three-jaw chuck rotating disc, an inner main shaft and an inner main shaft motor D, wherein the inner main shaft motor D is driven to the three-jaw chuck rotating disc through the inner main shaft, the three-jaw chuck rotating disc is arranged on the three-jaw chuck frame, the three-jaw chuck moving block is connected with the claw, and the claw is used for clamping the heat insulation tray;
The rotating module comprises a cavity connecting sleeve, a connecting bracket, an outer spindle motor C and a motor supporting plate, wherein the cavity connecting sleeve is arranged on the cavity shell, and the outer spindle is rotatably arranged in the cavity connecting sleeve; the upper end of the connecting bracket is connected with the three-jaw chuck frame, the lower end of the connecting bracket is connected with the upper end of the outer spindle, the outer spindle motor C is sleeved at the lower end of the outer spindle and used for driving the outer spindle to rotate, and the outer spindle motor C and the inner spindle motor D are fixedly arranged on the motor support plate;
The lifting module comprises a motor B, a screw support seat A, a sliding block, a moving block, a guide rail, a support frame, a screw and a screw support seat B, wherein the support frame is arranged on the cavity shell, the screw support seat A, the screw support seat B and the guide rail are all arranged on the support frame, the sliding block is connected with the moving block, the screw is rotatably arranged between the screw support seat A and the screw support seat B, the moving block is in threaded fit with the screw, the sliding block is in guiding sliding fit with the guide rail, a rotating shaft of the motor B is fixedly connected with one end of the screw, and the moving block is fixedly connected with the motor support plate.
Preferably, the chamber housing is connected to an external vacuum system or inert gas system by a connecting conduit for exposing the interior of the chamber housing to a vacuum or inert gas environment.
Preferably, a J-shaped sealing ring for sealing is arranged at the joint of the cavity shell and the HVPE channel connecting cylinder; an inner main shaft J-shaped sealing structure for sealing is arranged between the inner side wall at the upper end of the outer main shaft and the outer side wall at the upper end of the inner main shaft; an outer spindle J-shaped sealing structure for sealing is arranged between the inner wall of the cavity connecting sleeve and the side wall of the outer spindle.
Preferably, the thermal insulation tray is embedded with a phase change material capable of realizing phase change by heating.
Compared with the prior art, the invention has the beneficial effects that:
1. The thermal insulation tray containing the phase change material is adopted to realize the thermal insulation of the graphite disc, so that the thermal insulation tray can maintain the high temperature of more than 700 ℃ within a certain period of time, the probability of growth quality problem caused by abrupt temperature change or too low temperature of the GaN single crystal substrate slice is obviously reduced, and the growth quality of the GaN single crystal is improved;
2. The integrated chamber is connected with the HVPE equipment, the inside of the chamber can realize a certain vacuum degree or filling inert gas, and has the functions of heating and heat preservation, so that the environmental atmosphere of the GaN single crystal substrate slice in the whole transfer process can be ensured, and the growth quality of the GaN single crystal substrate in the subsequent process is ensured;
3. The transfer tray with the heat preservation function is adopted to transfer the GaN single crystal substrate slices in the heat preservation tray in the whole tray in the integrated cavity, namely, the turnover of all the GaN single crystal substrate slices in the heat preservation tray is realized in a mode of integrally overturning the tray, so that the sapphire substrate slices of all the GaN single crystal slices face upwards, and then the laser pre-stripping of all the GaN single crystal substrate slices is realized in a mode of fully scanning the tray, so that the Bernoulli adsorption transmission mode can be canceled, and the laser pre-stripping efficiency of the GaN single crystal substrate slices can be remarkably improved.
Drawings
FIG. 1 is a front view of the present application;
FIG. 2 is a left side view of the present application;
FIG. 3 is a schematic view of the construction of the tray station module of the present application;
FIG. 4 is a schematic view of a transfer tray according to the present application;
FIG. 5 is a schematic view of a water circulation channel and a cable channel according to the present application;
in the figure: 1-a base, 2-a turnover shaft supporting seat, 3-a bearing A, 4-a turnover driving shaft, 5-a connecting supporting block, 6-a cavity, 7-a cavity upper cover, 8-a balancing weight, 9-a rotating arm, 91-a water inlet channel, 92-a water outlet channel, 93-a cable channel, 10-a motor A, 11-quartz glass A, 12-a glass fixedly connecting block A, 13-a middle rotating tray; 131-a water-cooling protective cover, 132-an electric heating disc, 133-a graphite disc, 134-a water circulation cavity and 14-a channel connecting supporting seat; 15-bearing B, 16-J-shaped sealing rings, 17-heat preservation trays, 18-HVPE channel connecting cylinders, 19-cavity bottom plates, 22-tray station modules, 2201-motor B, 2202-screw supporting seat A, 2203-sliding blocks, 2204-moving blocks, 2205-guide rails, 2206-supporting frames, 2207-screws, 2208-screw supporting seat B, 2209-three-jaw chuck moving blocks, 2210-jaws, 2211-tray supports, 2212-three-jaw chuck supports, 2213-three-jaw chuck rotating disks, 2214-connecting supports, 2215-inner spindle J-shaped sealing structures, 2216-cavity connecting sleeves, 2217-outer spindle J-shaped sealing structures, 2218-outer spindles, 2219-inner spindles, 2220-outer spindle motors C, 2221-motor supporting plates, 2222-inner spindle motors D, 23-glass fixing blocks B and 24-quartz glass B.
Detailed Description
The following description of the embodiments of the present invention will be made clearly and completely with reference to the accompanying drawings, in which it is apparent that the embodiments described are only some embodiments of the present invention, but not all embodiments. All other embodiments, which can be made by those skilled in the art based on the embodiments of the invention without making any inventive effort, are intended to be within the scope of the invention.
The invention provides the following technical scheme:
As shown in fig. 1-2, the graphite disc turnover GaN single crystal substrate laser pre-lift-off integrated cavity is characterized by comprising:
A cavity housing;
A turnover mechanism; the actuating output end of the turnover mechanism is connected with the cavity shell and is used for turnover driving of the cavity shell;
HVPE channel connecting cylinder; the inside of the cavity shell is connected with HVPE equipment through an HVPE channel connecting cylinder;
a camera positioning window and a laser pre-stripping window; the camera positioning window and the laser pre-stripping window are both arranged on the cavity shell;
a transfer tray module for realizing station conversion of the transfer tray 13 between a tray station and a laser pre-stripping station; the transfer tray module is arranged on the cavity shell, an actuating part of the transfer tray module is arranged in the cavity shell, and the actuating part of the transfer tray module is connected with the transfer tray 13;
a tray station module 22; the tray station module 22 comprises a fixing module for clamping and releasing the heat-preserving tray 17, a rotating module for rotating the fixing module and the heat-preserving tray 17, and a lifting module for lifting and controlling the heat-preserving tray 17, the fixing module and the rotating module;
the GaN wafer slots on the transfer tray 13 are in one-to-one correspondence with the GaN wafer slots on the surface of the thermal insulation tray 17, and are used for receiving all GaN single crystal substrate slices on the thermal insulation tray 17 in a whole tray.
In this embodiment, rotation of the entire chamber housing is achieved by a drive member driving the tumble drive shaft 4 in rotation.
As shown in fig. 1, the tilting mechanism includes:
a turnover shaft supporting seat 2;
a bearing A3; the bearing A3 is arranged in the turnover shaft supporting seat 2;
a reversible drive shaft 4; the bearing A3 is sleeved on the overturning driving shaft 4, and one end of the overturning driving shaft 4 is connected with the first end of the cavity shell.
As shown in fig. 1, the tilting mechanism further includes:
The channel is connected with the supporting seat 14;
a bearing B15; the bearing B15 is arranged in the channel connection supporting seat 14; the bearing B15 is sleeved on the second end of the cavity shell; both the tilting shaft support seat 2 and the channel connection support seat 14 are mounted on the base 1.
As shown in fig. 1 and 5, the relay tray module includes:
A motor A10; the motor A10 is arranged on the outer wall of the cavity shell;
A balancing weight 8;
A swivel arm 9; the balancing weight 8 and the rotating arm 9 are both arranged in the cavity shell, the rotating shaft of the motor A10 penetrates through the cavity shell and then is connected with the rotating arm, and two ends of the rotating arm are respectively connected with the balancing weight 8 and the transfer tray 13; when the rotating arm rotates to the first position, the camera is externally arranged at the camera positioning window to observe the distribution position and the state of the GaN single crystal substrate slice on the surface of the whole heat preservation tray 17 in the LLO integrated cavity in real time, so that a basis is provided for the rotation positioning of the heat preservation tray 17; when the rotating arm rotates to the second position, the laser equipment probe is externally arranged at the laser pre-peeling window, so that the laser is led into the transfer tray 13 through the laser pre-peeling window, and the GaN single crystal substrate slice is pre-peeled.
As shown in fig. 4 and 5, the relay tray 13 includes:
a water-cooled protective cover 131;
An electric heating plate 132;
A graphite plate 133;
a water circulation chamber 134;
wherein a water inlet channel 91, a water outlet channel 92 and a cable channel 93 are arranged in the rotating arm 9; the first end of the water inlet channel 91, the first end of the water outlet channel 92 and the first end of the cable channel 93 are all communicated with the outside, the second end of the water inlet channel 91 and the second end of the water outlet channel 92 are respectively connected with the water inlet end and the water outlet end of the water circulation cavity 134, the cable is arranged in the cable channel 93 and is electrically connected with the electric heating disc 132, the water cooling protective cover 131 and the electric heating disc 132 are all connected with the graphite disc 133 in a heat transfer manner, and the water cooling protective cover 131 and the electric heating disc 132 are all attached to the graphite disc 133.
The GaN wafer slots on the graphite plate 133 are in one-to-one correspondence with the GaN wafer slots on the surface of the thermal insulation tray, and are used for receiving all GaN single crystal substrate slices on the thermal insulation tray.
The electric heating plate 132 is mainly composed of an electric heating wire and a ceramic furnace bottom and is used for heating and heat preservation of the graphite plate 133. The water-cooling protective cover 131 is used for wrapping and supporting the graphite disc 133 and the internal electric heating disc 132, and the cover body is cooled by adopting a circulating water cooling mode, so that the cover body can bear the background high temperature in the LLO integrated cavity.
As shown in fig. 1 and 2, the camera positioning window comprises transparent quartz glass a11 and a glass fixing block a12, wherein the quartz glass a11 is fixed on the cavity shell through the glass fixing block a 12;
The laser pre-stripping window comprises transparent quartz glass B24 and a glass fixing block B23, and the quartz glass B24 is fixed on the cavity shell through the glass fixing block B23.
As shown in fig. 2, in this embodiment, there are two laser pre-stripping windows, which have the function that when the graphite disc carrying the GaN single crystal substrate in the chamber moves below the window, the external laser equipment probe can introduce laser above the transfer tray 13 through the window, and the pre-stripping of all GaN single crystal substrate sheets on the whole disc surface can be realized through scanning of a specific path. The two laser pre-stripping windows are symmetrically arranged along the turnover driving shaft, and the function of the two laser pre-stripping windows is to facilitate the arrangement of the external laser equipment probes during field installation.
As shown in fig. 1 and 3, the fixing module comprises a three-jaw chuck moving block 2209, a jaw 2210, a three-jaw chuck frame 2212, a three-jaw chuck rotating disc 2213, an inner spindle 2219 and an inner spindle motor D2222, wherein the inner spindle motor D2222 is transmitted to the three-jaw chuck rotating disc 2213 through the inner spindle 2219, the three-jaw chuck rotating disc 2213 is arranged on the three-jaw chuck frame 2212, the three-jaw chuck moving block 2209 is connected with the jaw 2210, and the jaw 2210 is used for clamping the thermal insulation tray 17;
The three-jaw centering chuck mainly comprises a three-jaw chuck frame 2212, a three-jaw chuck rotary disc 2213, a three-jaw chuck movable block 2209, jaws 2210 and the like, and can realize the centering opening and closing of the jaws under the rotary drive of an inner main shaft 2219, and the top of the jaws is provided with a wedge structure for centering and clamping a fixed thermal insulation tray 17; during operation, the inner spindle 2219 is mainly used for driving the three-jaw centering chuck to open and close, and is driven by the inner spindle motor D2222;
The rotating module comprises a cavity connecting sleeve 2216, a connecting bracket 2214, an outer main shaft 2218, an outer main shaft motor C2220 and a motor supporting plate 2221, wherein the cavity connecting sleeve 2216 is arranged on a cavity shell, and the outer main shaft 2218 is rotatably arranged in the cavity connecting sleeve 2216; the upper end of the connecting support 2214 is connected with the three-jaw chuck frame 2212, the lower end of the connecting support 2214 is connected with the upper end of the outer spindle 2218, the outer spindle motor C2220 is sleeved at the lower end of the outer spindle 2218 and is used for driving the outer spindle 2218 to rotate, and the outer spindle motor C2220 and the inner spindle motor D2222 are fixedly arranged on the motor support plate 2221;
The outer spindle 2218 is mainly used for realizing the rotation positioning of the thermal insulation tray 17 and is driven by an outer spindle motor C2220;
The lifting module comprises a motor B2201, a screw support seat A2202, a sliding block 2203, a moving block 2204, a guide rail 2205, a support frame 2206, a screw 2207 and a screw support seat B2208, wherein the support frame 2206 is arranged on a cavity shell, the screw support seat A2202, the screw support seat B2208 and the guide rail 2205 are all arranged on the support frame 2206, the sliding block 2203 is connected with the moving block 2204, the screw 2207 is rotatably arranged between the screw support seat A2202 and the screw support seat B2208, the moving block 2204 is in threaded fit with the screw 2207, the sliding block 2203 is in guide sliding fit with the guide rail 2205, a rotating shaft of the motor B2201 is fixedly connected with one end of the screw 2207, and the moving block 2204 is fixedly connected with the motor support plate 2221.
The lifting module is used for realizing the lifting and the lowering of the heat preservation tray 17; the motor B2201 rotates to drive the screw 2207 to rotate, and the moving block 2204 is in threaded fit with the screw 2207, so that the moving block 2204 moves up and down to drive the motor supporting plate 2221 connected with the moving block to move up and down, thereby realizing up and down movement of the thermal insulation tray 17.
In this embodiment, the tray station module 22 is composed of a rotating module, a lifting module and a fixing module for detaching the bearing seat 20 and the bearing C21.
The cavity shell is connected with an external vacuum system or an inert gas system through a connecting pipeline and is used for enabling the interior of the cavity shell to be in a vacuum or inert gas environment.
As shown in fig. 1 and 3, a J-shaped sealing ring 16 for sealing is arranged at the joint of the cavity shell and the HVPE channel connecting cylinder; an inner spindle J-shaped sealing structure 2215 for sealing is arranged between the inner side wall of the upper end of the outer spindle 2218 and the outer side wall of the upper end of the inner spindle 2219; an outer spindle J-shaped sealing structure 2217 for sealing is arranged between the inner wall of the cavity connecting sleeve 2216 and the side wall of the outer spindle 2218.
The heat-insulating tray 17 is embedded with a phase-change material (such as aluminum or an alloy thereof) capable of realizing phase change by heating, and is used for insulating the GaN single crystal substrate slice on the tray surface.
As shown in fig. 1, the cavity shell is formed by connecting structures such as a cavity 6, a cavity upper cover 7, a cavity bottom plate 19 and the like. Wherein, the cavity upper cover 7 comprises an outer shell, a water cooling layer and an inner heat preservation layer from top to bottom, and is mainly used for sealing the cavity; the wall of the cavity 6 comprises an outer shell, a heat insulation layer, a heating layer, an inner shell and other structures from outside to inside, so that the functions of heat insulation of the outer wall of the cavity and heating in the cavity can be realized. Corresponding connecting pipelines are arranged on the wall body and are connected with an external vacuum system or an inert gas system, so that the inside of the cavity can realize certain vacuum degree or filling inert gas. The motor A10 and the glass fixedly connecting block A12 are both arranged on the cavity upper cover 7, and the supporting frame 2206 and the bearing seat 20 are both arranged on the cavity bottom plate 19;
As shown in fig. 1, a protrusion is provided on one side of the cavity 6, through which the cavity 6 is connected to the tilting drive shaft 4, and a connection support block 5 for supporting is provided between the protrusion and the cavity 6.
In some embodiments, a tray support 2211 is further provided, the tray support 2211 is installed between the three-jaw chuck support 2212 and the thermal insulation tray 17, and the tray support 2211 comprises a tray supporting table, springs, a tray supporting seat and other components from top to bottom, and is used for lifting the thermal insulation tray and has a buffering function because the springs stretch;
the main structural characteristics of the graphite disc turnover type GaN single crystal substrate laser pre-stripping integrated cavity are as follows:
1. An integrated cavity structure which can realize heating and heat preservation functions and has a certain vacuum degree or is filled with inert gas is adopted. The cavity upper cover 7 comprises a three-layer structure comprising an outer shell, a water cooling layer, an inner heat insulation layer and the like from top to bottom and is used for sealing the cavity; the wall of the cavity 6 comprises an outer shell, a heat insulation layer, a heating layer, an inner shell and other structures from outside to inside, so that the functions of heat insulation of the outer wall of the cavity and heating in the cavity are realized. The wall body is provided with a corresponding connecting pipeline which is connected with an external vacuum system or an inert gas system, so that the inside of the cavity is subjected to certain vacuum degree or inert gas filling.
2. And a driving shaft system which can be connected with the HVPE equipment and can realize the integral overturning of the whole LLO integrated cavity and a connecting channel of the HVPE equipment are adopted.
3. And a transparent window based on quartz glass and an external camera mode are adopted to realize real-time observation of the distribution positions and the states of all GaN single crystal chips on the surface of the heat preservation tray 17 in the integrated cavity.
4. And the heat preservation of the graphite disc is realized by adopting a heat preservation tray mode based on phase change materials. The heat preservation tray is based on an original pure graphite tray, is embedded with a phase change material (such as aluminum or aluminum alloy) capable of realizing phase change through heating through special structural design, and is used for preserving heat of a disc surface GaN single crystal substrate sheet.
5. And the transfer tray module with heating and heat preservation functions is adopted to realize the turnover and station conversion of all GaN single crystal chips in the graphite tray.
6. The fixing, lifting and rotating operation of the graphite tray is realized by adopting the tray station module with the fixing, lifting and rotating functions.
7. The transparent window based on quartz glass and an external laser equipment probe are adopted to realize the pre-stripping of all GaN single crystal wafer GaN single crystal substrate slices on the transfer tray 13 in the integrated cavity.
Although embodiments of the present invention have been shown and described, it will be understood by those skilled in the art that various changes, modifications, substitutions and alterations can be made therein without departing from the principles and spirit of the invention, the scope of which is defined in the appended claims and their equivalents.
Claims (10)
1. The utility model provides a graphite dish upset formula GaN single crystal substrate laser is peeled off integrated cavity in advance which characterized in that includes:
A cavity housing;
A turnover mechanism; the actuating output end of the turnover mechanism is connected with the cavity shell and is used for turnover driving of the cavity shell;
HVPE channel connecting cylinder; the inside of the cavity shell is connected with HVPE equipment through an HVPE channel connecting cylinder;
a camera positioning window and a laser pre-stripping window; the camera positioning window and the laser pre-stripping window are both arranged on the cavity shell;
The transfer tray module is used for realizing station conversion of the transfer tray (13) between a tray station and a laser pre-stripping station; the transfer tray module is arranged on the cavity shell, an actuating part of the transfer tray module is arranged in the cavity shell, and the actuating part of the transfer tray module is connected with the transfer tray (13);
a tray station module (22); the tray station module (22) comprises a fixing module for grasping and releasing the heat-preserving tray (17), a rotating module for rotating the fixing module and the heat-preserving tray (17), and a lifting module for lifting and controlling the heat-preserving tray (17), the fixing module and the rotating module;
The GaN wafer slots on the transfer tray (13) are in one-to-one correspondence with the GaN wafer slots on the surface of the heat preservation tray (17), and are used for receiving all GaN single crystal substrate slices on the heat preservation tray (17) in a whole tray.
2. The graphite disc flipped GaN single crystal substrate laser pre-lift-off integrated cavity of claim 1, wherein the flipping mechanism comprises:
A turnover shaft supporting seat (2);
a bearing A (3); the bearing A (3) is arranged in the turnover shaft supporting seat (2);
A turnover driving shaft (4); the bearing A (3) is sleeved on the overturning driving shaft (4), and one end of the overturning driving shaft (4) is connected with the first end of the cavity shell.
3. The graphite disc flipped GaN single crystal substrate laser pre-lift-off integrated cavity of claim 2, wherein the flipping mechanism further comprises:
The channel is connected with the supporting seat (14);
A bearing B (15); the bearing B (15) is arranged in the channel connection supporting seat (14); the bearing B (15) is sleeved on the second end of the cavity shell; the turnover shaft supporting seat (2) and the channel connecting supporting seat (14) are both arranged on the base (1).
4. The graphite disc flipped GaN single crystal substrate laser pre-lift-off integrated cavity of claim 2, wherein the staging tray module comprises:
A motor A (10); the motor A (10) is arranged on the outer wall of the cavity shell;
a balancing weight (8);
A swivel arm (9); the balancing weight (8) and the rotating arm (9) are both arranged in the cavity shell, the rotating shaft of the motor A (10) penetrates through the cavity shell and then is connected with the rotating arm, and two ends of the rotating arm are respectively connected with the balancing weight (8) and the transfer tray (13); when the rotating arm rotates to the first position, the distribution position and the state of the GaN single crystal substrate slice on the surface of the whole heat preservation tray (17) in the LLO integrated cavity are observed in real time through the external camera at the camera positioning window; when the rotating arm rotates to the second position, the laser equipment probe is externally arranged at the laser pre-peeling window, so that the laser is led into the transfer tray (13) through the laser pre-peeling window, and the GaN single crystal substrate slice is pre-peeled.
5. The graphite disc flipped GaN single crystal substrate laser pre-lift-off integrated cavity of claim 4, characterized in that the staging tray (13) comprises:
a water-cooled protective cover (131);
an electrothermal disk (132);
a graphite plate (133);
A water circulation chamber (134);
Wherein a water inlet channel (91), a water outlet channel (92) and a cable channel (93) are arranged in the rotating arm (9); the first end of water inlet channel (91), the first end of water outlet channel (92), the first end of cable channel (93) all communicate with the outside, the second end of water inlet channel (91) and the second end of water outlet channel (92) are connected with the water inlet end and the water outlet end of hydrologic cycle chamber (134) respectively, the cable is laid in cable channel (93), cable and electric heat dish (132) electric connection, water-cooling safety cover (131) and electric heat dish (132) all are connected with graphite dish (133) heat transfer.
6. The graphite disc turnover type GaN single crystal substrate laser pre-peeling integrated cavity of claim 4, wherein,
The camera positioning window comprises transparent quartz glass A (11) and a glass fixing block A (12), and the quartz glass A (11) is fixed on the cavity shell through the glass fixing block A (12);
The laser pre-stripping window comprises transparent quartz glass B (24) and a glass fixing block B (23), and the quartz glass B (24) is fixed on the cavity shell through the glass fixing block B (23).
7. The graphite disc turnover type GaN single crystal substrate laser pre-peeling integrated cavity of claim 1, wherein,
The fixing module comprises a three-jaw chuck moving block (2209), a clamping jaw (2210), a three-jaw chuck frame (2212), a three-jaw chuck rotating disc (2213), an inner spindle (2219) and an inner spindle motor D (2222), wherein the inner spindle motor D (2222) is driven to the three-jaw chuck rotating disc (2213) through the inner spindle (2219), the three-jaw chuck rotating disc (2213) is arranged on the three-jaw chuck frame (2212), the three-jaw chuck moving block (2209) is connected with the clamping jaw (2210), and the clamping jaw (2210) is used for clamping a heat-insulation tray (17);
The rotating module comprises a cavity connecting sleeve (2216), a connecting bracket (2214), an outer spindle (2218), an outer spindle motor C (2220) and a motor support plate (2221), wherein the cavity connecting sleeve (2216) is arranged on a cavity shell, and the outer spindle (2218) is rotatably arranged in the cavity connecting sleeve (2216); the upper end of the connecting support (2214) is connected with the three-jaw chuck frame (2212), the lower end of the connecting support (2214) is connected with the upper end of the outer spindle (2218), the outer spindle motor C (2220) is sleeved at the lower end of the outer spindle (2218) and used for driving the outer spindle (2218) to rotate, and the outer spindle motor C (2220) and the inner spindle motor D (2222) are fixedly arranged on the motor support plate (2221);
The lifting module comprises a motor B (2201), a screw support seat A (2202), a sliding block (2203), a moving block (2204), a guide rail (2205), a support frame (2206), a screw (2207) and a screw support seat B (2208), wherein the support frame (2206) is arranged on a cavity shell, the screw support seat A (2202), the screw support seat B (2208) and the guide rail (2205) are all arranged on the support frame (2206), the sliding block (2203) is connected with the moving block (2204), the screw (2207) is rotatably arranged between the screw support seat A (2202) and the screw support seat B (2208), the moving block (2204) is in threaded fit with the screw (2207), the sliding block (2203) is in guide sliding fit with the guide rail (2205), a rotating shaft of the motor B (2201) is fixedly connected with one end of the screw (2207), and the moving block (2204) is fixedly connected with the motor support plate (2221).
8. The graphite disc turnover type GaN single crystal substrate laser pre-peeling integrated cavity according to claim 1, wherein the cavity shell is connected with an external vacuum system or an inert gas system through a connecting pipeline and is used for enabling the interior of the cavity shell to be in a vacuum or inert gas environment.
9. The graphite disc turnover type GaN single crystal substrate laser pre-peeling integrated cavity according to claim 7, wherein a J-shaped sealing ring (16) for sealing is arranged at the joint of the cavity shell and the HVPE channel connecting cylinder; an inner spindle J-shaped sealing structure (2215) for sealing is arranged between the inner side wall of the upper end of the outer spindle (2218) and the outer side wall of the upper end of the inner spindle (2219); an outer spindle J-shaped sealing structure (2217) for sealing is arranged between the inner wall of the cavity connecting sleeve (2216) and the side wall of the outer spindle (2218).
10. The graphite disc turnover type GaN single crystal substrate laser pre-peeling integrated cavity according to claim 1, wherein the heat-insulating tray (17) is embedded with a phase change material capable of realizing phase change by heating.
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| WO1999003764A1 (en) * | 1997-07-16 | 1999-01-28 | Systemation Engineered Products, Inc. | Tray handling apparatus |
| JPH11300486A (en) * | 1998-04-20 | 1999-11-02 | Mitsubishi Electric Corp | Laser substrate cutting machine and inverting device mounted thereon as well as laser substrate cutting method |
| KR101160158B1 (en) * | 2010-05-28 | 2012-06-27 | 주식회사 엘티에스 | substrate detaching apparatus of LLO process |
| KR101918538B1 (en) * | 2016-03-03 | 2018-11-15 | 에이피시스템 주식회사 | Detecting method of substrate inverting for Laser lift off process |
| KR101712034B1 (en) * | 2016-07-19 | 2017-03-03 | 디앤에이 주식회사 | Turn over module and laser lift off apparatus having the same |
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| CN109411636B (en) * | 2018-10-12 | 2020-12-29 | 武汉华星光电半导体显示技术有限公司 | Laser stripping device for display substrate |
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