CN111778548A - Crucible for casting monocrystalline silicon and method for casting monocrystalline silicon - Google Patents
Crucible for casting monocrystalline silicon and method for casting monocrystalline silicon Download PDFInfo
- Publication number
- CN111778548A CN111778548A CN201910269249.5A CN201910269249A CN111778548A CN 111778548 A CN111778548 A CN 111778548A CN 201910269249 A CN201910269249 A CN 201910269249A CN 111778548 A CN111778548 A CN 111778548A
- Authority
- CN
- China
- Prior art keywords
- crucible
- seed crystal
- backing plate
- monocrystalline silicon
- notch
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 229910021421 monocrystalline silicon Inorganic materials 0.000 title claims abstract description 37
- 238000005266 casting Methods 0.000 title claims abstract description 23
- 238000000034 method Methods 0.000 title claims abstract description 13
- 239000013078 crystal Substances 0.000 claims abstract description 77
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims abstract description 7
- 239000005350 fused silica glass Substances 0.000 claims abstract description 7
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract description 2
- 238000012797 qualification Methods 0.000 abstract description 2
- 229910052710 silicon Inorganic materials 0.000 abstract description 2
- 239000010703 silicon Substances 0.000 abstract description 2
- 238000005520 cutting process Methods 0.000 description 3
- 238000010899 nucleation Methods 0.000 description 3
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 3
- 229910021419 crystalline silicon Inorganic materials 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 239000000843 powder Substances 0.000 description 1
- 239000002210 silicon-based material Substances 0.000 description 1
Images
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B11/00—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B11/00—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method
- C30B11/002—Crucibles or containers for supporting the melt
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/02—Elements
- C30B29/06—Silicon
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- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Abstract
The invention discloses a crucible for casting monocrystalline silicon and a method for casting the monocrystalline silicon. The seed crystal notch is positioned at the middle position of the backing plate. In the crystal growth stage, because the crucible structure provides a heat conduction structure with cold middle part and hot edge part, the crystal can be more favorably grown from the middle part to the outside, thereby reducing the proportion of mixed crystals in a silicon ingot and simply and effectively improving the protection reserved power of the single crystal seed crystal. And the diameter and the depth of the seed crystal notch are realized only by changing the shape and the thickness of the fused quartz plate without changing a mold of the crucible, so that the qualification rate of the crucible body is not influenced.
Description
Technical Field
The invention belongs to the technical field of photovoltaics, and particularly relates to a crucible for casting monocrystalline silicon and a method for casting the monocrystalline silicon.
Background
Crystalline silicon is currently the mainstream solar cell material, with cast polycrystalline silicon still occupying a major share of the crystalline silicon solar market. Cast polycrystalline silicon can be classified into general cast polycrystalline without a seeding step, cast single crystals (pseudo single crystals, quasi single crystals, and the like, which still belong to the category of polycrystalline because perfect single crystals cannot be grown) seeded by using a monocrystalline silicon block as a seed crystal, and high-efficiency polycrystalline in which seeding is performed by using a polycrystalline silicon material (powder, particles, chips, and the like) as a seed crystal according to a seeding method.
The cast single crystal has an advantage of low production cost compared with the Czochralski single crystal, and has an advantage of high photoelectric conversion efficiency compared with the ordinary cast polycrystal. The existing single crystal casting technology generally needs to splice a plurality of (5 × 5, 6 × 6 and 7 × 7) single crystal blocks into a seed crystal main body, and epitaxially grow a large-size single crystal along a < 100 > crystal direction by using the spliced seed crystal. But because of the influence of the splicing of the single crystal blocks, the cast single crystal contains a large amount of dislocation, the crystal quality is seriously influenced, and in addition, the square single crystal which can be spliced is cut from the straight pulling single crystal rod, so the cost is higher.
Disclosure of Invention
In order to solve the problems, the invention provides a crucible for casting monocrystalline silicon, which is used for casting and growing a complete large-size monocrystalline silicon ingot.
The technical scheme of the invention is as follows: the utility model provides a crucible for casting monocrystalline silicon, includes the crucible body, still including laying the backing plate on the internal bottom of crucible, have on the backing plate with monocrystalline silicon seed crystal shape assorted seed crystal notch.
Preferably, the seed crystal notch is located at a central position of the pad plate.
Preferably, the backing plate is formed by splicing at least two backing plate blocks, a notch is formed in each backing plate block, and when the splicing pads of each backing plate block are arranged on the bottom in the crucible body, the notches of the backing plate blocks are spliced together to form the seed crystal notch.
Preferably, the number of the cushion blocks is four.
Preferably, the seed crystal notch is cylindrical or truncated cone shaped. The invention can utilize the cylindrical seed crystal cut by the single crystal round rod without cutting the cylindrical seed crystal into square seed crystals.
Preferably, the backing plate block is a fused silica plate.
The invention also provides a method for casting monocrystalline silicon, which comprises the following steps:
(1) a base plate is laid at the bottom in the crucible, and a seed crystal notch matched with the shape of the monocrystalline silicon seed crystal is formed in the base plate;
(2) and placing the monocrystalline silicon seed crystal in the notch of the seed crystal to grow the monocrystalline silicon.
Preferably, the seed crystal notch is cylindrical or truncated cone shaped. The cylindrical seed crystal can be cut by a single crystal round rod without cutting the cylindrical seed crystal into square seed crystals.
Preferably, the backing plate is formed by splicing at least two backing plate blocks, a notch is formed in each backing plate block, and when the splicing pads of each backing plate block are arranged on the bottom in the crucible body, the notches of the backing plate blocks are spliced together to form the seed crystal notch.
Preferably, the backing plate block is a fused quartz plate, and the seed crystal notch is positioned in the middle of the backing plate.
Compared with the prior art, the invention has the beneficial effects that:
in the crystal growth stage, because the crucible structure provides a heat conduction structure with cold middle part and hot edge part, the crystal can be more favorably grown from the middle part to the outside, thereby reducing the proportion of mixed crystals in a silicon ingot and simply and effectively improving the protection reserved power of the single crystal seed crystal. And the diameter and the depth of the seed crystal notch are realized only by changing the shape and the thickness of the fused quartz plate without changing a mold of the crucible, so that the qualification rate of the crucible body is not influenced.
Drawings
FIG. 1 is a schematic structural diagram of the present invention.
Fig. 2 is a schematic view of the internal structure of the present invention.
Detailed Description
As shown in fig. 1 and 2, the crucible comprises a crucible body 1 and a backing plate 2 laid on the bottom in the crucible body 1, wherein a seed crystal notch 3 matched with the shape of a monocrystalline silicon seed crystal is formed in the backing plate 2, and the seed crystal notch 3 is located in the middle of the backing plate 2. The seed crystal notch 3 is cylindrical or truncated cone-shaped. The invention can utilize the cylindrical seed crystal cut by the single crystal round rod without cutting the cylindrical seed crystal into square seed crystals.
As shown in fig. 1 and 2, the backing plate 2 of the present invention can be formed by splicing at least two backing plate blocks, for example, four backing plate blocks are provided, the backing plate blocks are provided with notches, and when the splicing pads of the backing plate blocks are provided on the bottom in the crucible body 1, the notches of the backing plate blocks are spliced together to form the seed crystal notch 3. In addition, the material of the backing plate block is also various, for example, the backing plate block can be a fused quartz plate.
The crucible is applied to a method for casting monocrystalline silicon, and comprises the following steps:
(1) a base plate is laid at the bottom in the crucible, and a seed crystal notch 3 matched with the shape of the monocrystalline silicon seed crystal is arranged on the base plate;
(2) and placing a monocrystalline silicon seed crystal in the seed crystal notch 3 to grow monocrystalline silicon.
The method adopts the existing method for casting the monocrystalline silicon, and the invention is mainly improved in that the crucible is improved to change the growth of the seed crystal, so the detailed steps of casting the monocrystalline silicon are not repeated in detail.
Claims (10)
1. The utility model provides a crucible for casting monocrystalline silicon, includes the crucible body, its characterized in that still includes the backing plate of laying on the internal bottom of crucible, have on the backing plate with monocrystalline silicon seed crystal shape assorted seed crystal notch.
2. The crucible for casting monocrystalline silicon as recited in claim 1, wherein the seed notch is located at a central position of the backing plate.
3. The crucible for casting monocrystalline silicon as claimed in claim 1 or 2, wherein the pad is formed by splicing at least two pad blocks, the pad blocks are provided with notches, and when the spliced pads of the pad blocks are arranged on the bottom in the crucible body, the notches of the pad blocks are spliced together to form the seed crystal notch.
4. The crucible for casting single crystal silicon as claimed in claim 3, wherein the number of said pallet blocks is four.
5. The crucible for casting monocrystalline silicon as claimed in claim 3, wherein the seed crystal notch has a cylindrical or truncated cone shape.
6. The crucible for casting single crystal silicon as claimed in claim 3, wherein the backing plate block is a fused silica plate.
7. A method of casting single crystal silicon, comprising the steps of:
(1) a base plate is laid at the bottom in the crucible, and a seed crystal notch matched with the shape of the monocrystalline silicon seed crystal is formed in the base plate;
(2) and placing the monocrystalline silicon seed crystal in the notch of the seed crystal to grow the monocrystalline silicon.
8. The method of single crystal silicon of claim 7 wherein the single crystal seed crystal is cylindrical or frustoconical in shape.
9. The method of claim 7, wherein the backing plate is formed by splicing at least two backing plate blocks, the backing plate blocks are provided with notches, and when the splicing pads of each backing plate block are arranged on the bottom in the crucible body, the notches of the backing plate blocks are spliced together to form the seed crystal notch.
10. The method of single crystal silicon of claim 9 wherein the backing plate block is a fused silica plate and the seed notch is located at a central position of the backing plate.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201910269249.5A CN111778548A (en) | 2019-04-04 | 2019-04-04 | Crucible for casting monocrystalline silicon and method for casting monocrystalline silicon |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201910269249.5A CN111778548A (en) | 2019-04-04 | 2019-04-04 | Crucible for casting monocrystalline silicon and method for casting monocrystalline silicon |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN111778548A true CN111778548A (en) | 2020-10-16 |
Family
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201910269249.5A Pending CN111778548A (en) | 2019-04-04 | 2019-04-04 | Crucible for casting monocrystalline silicon and method for casting monocrystalline silicon |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN111778548A (en) |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101935867A (en) * | 2010-09-17 | 2011-01-05 | 浙江大学 | Method for growing large-grain cast multicrystalline silicon |
| CN101979718A (en) * | 2010-11-30 | 2011-02-23 | 奥特斯维能源（太仓）有限公司 | Quartz crucible and method for casting quasi-single crystal |
| CN102146580A (en) * | 2011-03-21 | 2011-08-10 | 浙江碧晶科技有限公司 | Seeding mold for growing silicon crystals by using orientated solidification method and crystal growing method |
| US20110259262A1 (en) * | 2008-06-16 | 2011-10-27 | Gt Solar, Inc. | Systems and methods for growing monocrystalline silicon ingots by directional solidification |
-
2019
- 2019-04-04 CN CN201910269249.5A patent/CN111778548A/en active Pending
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20110259262A1 (en) * | 2008-06-16 | 2011-10-27 | Gt Solar, Inc. | Systems and methods for growing monocrystalline silicon ingots by directional solidification |
| CN101935867A (en) * | 2010-09-17 | 2011-01-05 | 浙江大学 | Method for growing large-grain cast multicrystalline silicon |
| CN101979718A (en) * | 2010-11-30 | 2011-02-23 | 奥特斯维能源（太仓）有限公司 | Quartz crucible and method for casting quasi-single crystal |
| CN102146580A (en) * | 2011-03-21 | 2011-08-10 | 浙江碧晶科技有限公司 | Seeding mold for growing silicon crystals by using orientated solidification method and crystal growing method |
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Application publication date: 20201016 |