CN111769191B - Ultraviolet LED chip heat dissipation composite substrate - Google Patents
Ultraviolet LED chip heat dissipation composite substrate Download PDFInfo
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- CN111769191B CN111769191B CN202010763408.XA CN202010763408A CN111769191B CN 111769191 B CN111769191 B CN 111769191B CN 202010763408 A CN202010763408 A CN 202010763408A CN 111769191 B CN111769191 B CN 111769191B
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- 239000002131 composite material Substances 0.000 title claims abstract description 28
- 239000000758 substrate Substances 0.000 title claims abstract description 28
- 230000017525 heat dissipation Effects 0.000 title claims abstract description 26
- 239000013078 crystal Substances 0.000 claims abstract description 65
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 claims abstract description 29
- 229910003460 diamond Inorganic materials 0.000 claims abstract description 24
- 239000010432 diamond Substances 0.000 claims abstract description 24
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims abstract description 21
- 229910021389 graphene Inorganic materials 0.000 claims abstract description 21
- 239000000853 adhesive Substances 0.000 claims description 3
- 230000001070 adhesive effect Effects 0.000 claims description 3
- 239000004575 stone Substances 0.000 claims 1
- 239000000463 material Substances 0.000 abstract description 7
- 238000009825 accumulation Methods 0.000 abstract description 5
- 238000004806 packaging method and process Methods 0.000 abstract description 5
- 230000032683 aging Effects 0.000 abstract description 3
- -1 graphite alkene Chemical class 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 229910017083 AlN Inorganic materials 0.000 description 1
- PIGFYZPCRLYGLF-UHFFFAOYSA-N Aluminum nitride Chemical compound [Al]#N PIGFYZPCRLYGLF-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 229910002804 graphite Inorganic materials 0.000 description 1
- 239000010439 graphite Substances 0.000 description 1
- 238000005286 illumination Methods 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 230000005693 optoelectronics Effects 0.000 description 1
- 238000009877 rendering Methods 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 230000001954 sterilising effect Effects 0.000 description 1
- 238000004659 sterilization and disinfection Methods 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/64—Heat extraction or cooling elements
- H01L33/641—Heat extraction or cooling elements characterized by the materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/64—Heat extraction or cooling elements
- H01L33/642—Heat extraction or cooling elements characterized by the shape
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Led Device Packages (AREA)
Abstract
The invention discloses an ultraviolet LED chip heat dissipation composite substrate, which comprises an SiC heat conduction layer, a diamond heat conduction layer, a graphene heat conduction layer and an aluminum nitride single crystal heat conduction layer which are sequentially arranged from top to bottom; in the technical scheme, the heat dissipation composite substrate formed by multiple layers of high-thermal-conductivity materials can quickly realize the spread of heat energy in the transverse and longitudinal directions, improve the heat dissipation efficiency of the ultraviolet LED chip, and reduce the efficiency reduction and the aging of the packaging structure of the ultraviolet LED caused by heat accumulation.
Description
Technical Field
The invention relates to the technical field of optoelectronic devices, in particular to an ultraviolet LED chip heat dissipation composite substrate.
Background
Ultraviolet Light Emitting Diodes (LEDs) have important applications in the fields of physical sterilization, illumination with high color rendering index, high-density optical storage, and the like due to their advantages of short wavelength, high photon energy, uniform light beam, and the like. At present, a great deal of research has made important breakthrough in the aspects of crystal quality, high A1 component, short-wavelength structure design and other technologies, and the deep ultraviolet LED devices below 300 nanometers are successfully prepared, so that the milliwatt-level power output is realized, and great progress is made in the aspect of reliability.
However, as is well known, when an LED is operated, the heat value is relatively large, if the heat cannot be dissipated in time, the service life and normal operation of the ultraviolet LED are greatly affected, and due to the heat accumulation, the efficiency is reduced and the packaging structure is aged, so that the popularization and application of the ultraviolet LED are limited to a certain extent.
Therefore, the prior art still needs to be improved and developed.
Disclosure of Invention
The invention aims to provide an ultraviolet LED chip heat dissipation composite substrate, and aims to solve the problems that the existing ultraviolet LED has large heat productivity during operation, heat accumulation is not easy to dissipate, the service life and normal operation of the ultraviolet LED are influenced, the efficiency is reduced, and a packaging structure is aged.
The technical scheme of the invention is as follows: the utility model provides an ultraviolet LED chip heat dissipation composite substrate, wherein, includes by the SiC heat-conducting layer, diamond heat-conducting layer, graphite alkene heat-conducting layer and the aluminium nitride single crystal heat-conducting layer that sets gradually from top to bottom.
The ultraviolet LED chip heat dissipation composite substrate is characterized in that adjacent heat conduction layers of the SiC heat conduction layer, the diamond heat conduction layer, the graphene heat conduction layer and the aluminum nitride single crystal heat conduction layer are bonded through a high-heat-conduction heat conduction adhesive.
The ultraviolet LED chip heat dissipation composite substrate is characterized in that the dislocation density of the SiC heat conduction layer is more than 1020cm-3The SiC heat conducting layer is of a cubic phase SiC single crystal structure.
The ultraviolet LED chip heat dissipation composite substrate is characterized in that the dislocation density of the SiC heat conduction layer is more than 1020cm-3The SiC heat conducting layer is of a hexagonal phase SiC single crystal structure.
The ultraviolet LED chip heat dissipation composite substrate is characterized in that the dislocation density of the SiC heat conduction layer is more than 1020cm-3The SiC heat conduction layer is a superlattice structure formed by overlapping cubic phase SiC single crystals and hexagonal phase SiC single crystals, wherein the thickness of the cubic phase SiC single crystals is 1.37-3.96 times that of the hexagonal phase SiC single crystals; wherein the total thickness of the superlattice structure formed by the cubic phase SiC single crystal and the hexagonal phase SiC single crystal is more than 100 microns and less than 200 microns.
The ultraviolet LED chip heat dissipation composite substrate is characterized in that the dislocation density of the diamond heat conduction layer is more than 1017cm-3The diamond heat conduction layer is an n-type diamond heat conduction layer or a p-type diamond heat conduction layer or an insulating diamond heat conduction layer; the thickness of the diamond heat conduction layer is more than 100 microns and less than 200 microns.
The ultraviolet LED chip heat dissipation composite substrate is characterized in that the dislocation density of the graphene heat conduction layer is greater than 1017cm-3The graphene heat conduction layer is an n-type graphene heat conduction layer or a p-type graphene heat conduction layer; the thickness of the graphene heat conduction layer is larger than 1 nanometer and smaller than 200 nanometers.
The ultraviolet LED chip heat dissipation composite substrate is characterized in that the dislocation density of the aluminum nitride single crystal heat conduction layer is more than 1017cm-3Aluminum nitride single crystal wireThe thermal layer is an n-type aluminum nitride single crystal heat conduction layer or a p-type aluminum nitride single crystal heat conduction layer or an insulating aluminum nitride single crystal heat conduction layer; the thickness of the aluminum nitride single crystal heat conduction layer is more than 100 microns and less than 200 microns.
The ultraviolet LED chip heat dissipation composite substrate is characterized in that a crystal region of an aluminum nitride single crystal in the aluminum nitride single crystal heat conduction layer is oriented to an m crystal face, an a crystal face or a c crystal face.
The invention has the beneficial effects that: according to the ultraviolet LED chip heat dissipation composite substrate, the heat dissipation composite substrate is formed by utilizing multiple layers of high-heat-conductivity materials, so that heat energy can be rapidly transmitted in the transverse direction and the longitudinal direction, the heat dissipation efficiency of an ultraviolet LED chip is improved, and the efficiency reduction and the aging of a packaging structure of an ultraviolet LED caused by heat accumulation are reduced.
Drawings
Fig. 1 is a schematic structural diagram of an ultraviolet LED chip heat dissipation composite substrate according to the present invention.
Detailed Description
Reference will now be made in detail to embodiments of the present invention, examples of which are illustrated in the accompanying drawings, wherein like reference numerals refer to the same or similar elements or elements having the same or similar function throughout. The embodiments described below with reference to the accompanying drawings are illustrative only for the purpose of explaining the present invention, and are not to be construed as limiting the present invention.
In the description of the present invention, it is to be understood that the terms "center", "longitudinal", "lateral", "length", "width", "thickness", "upper", "lower", "front", "rear", "left", "right", "vertical", "horizontal", "top", "bottom", "inner", "outer", "clockwise", "counterclockwise", and the like, indicate orientations and positional relationships based on those shown in the drawings, and are used only for convenience of description and simplicity of description, and do not indicate or imply that the device or element being referred to must have a particular orientation, be constructed and operated in a particular orientation, and thus, should not be considered as limiting the present invention. Furthermore, the terms "first", "second" and "first" are used for descriptive purposes only and are not to be construed as indicating or implying relative importance or implicitly indicating the number of technical features indicated. Thus, features defined as "first", "second", may explicitly or implicitly include one or more of the described features. In the description of the present invention, "a plurality" means two or more unless specifically defined otherwise.
In the description of the present invention, it should be noted that, unless otherwise explicitly specified or limited, the terms "mounted," "connected," and "connected" are to be construed broadly, e.g., as meaning either a fixed connection, a removable connection, or an integral connection; may be mechanically connected, may be electrically connected or may be in communication with each other; either directly or indirectly through intervening media, either internally or in any other relationship. The specific meanings of the above terms in the present invention can be understood by those skilled in the art according to specific situations.
In the present invention, unless otherwise expressly stated or limited, "above" or "below" a first feature means that the first and second features are in direct contact, or that the first and second features are not in direct contact but are in contact with each other via another feature therebetween. Also, the first feature being "on," "above" and "over" the second feature includes the first feature being directly on and obliquely above the second feature, or merely indicating that the first feature is at a higher level than the second feature. A first feature being "under," "below," and "beneath" a second feature includes the first feature being directly under and obliquely below the second feature, or simply meaning that the first feature is at a lesser elevation than the second feature.
The following disclosure provides many different embodiments or examples for implementing different features of the invention. To simplify the disclosure of the present invention, the components and arrangements of specific examples are described below. Of course, they are merely examples and are not intended to limit the present invention. Furthermore, the present invention may repeat reference numerals and/or letters in the various examples, such repetition is for the purpose of simplicity and clarity and does not in itself dictate a relationship between the various embodiments and/or configurations discussed. In addition, the present invention provides examples of various specific processes and materials, but one of ordinary skill in the art may recognize applications of other processes and/or uses of other materials.
As shown in fig. 1, an ultraviolet LED chip heat dissipation composite substrate includes a SiC heat conduction layer 1, a diamond heat conduction layer 2, a graphene heat conduction layer 3, and an aluminum nitride single crystal heat conduction layer 4, which are sequentially arranged from top to bottom.
In the technical scheme, the heat dissipation composite substrate formed by multiple layers of high-thermal-conductivity materials can quickly realize the spread of heat energy in the transverse and longitudinal directions, improve the heat dissipation efficiency of the ultraviolet LED chip, and reduce the efficiency reduction and the aging of the packaging structure of the ultraviolet LED caused by heat accumulation.
In certain embodiments, adjacent heat conduction layers of the SiC heat conduction layer 1, the diamond heat conduction layer 2, the graphene heat conduction layer 3 and the aluminum nitride single crystal heat conduction layer 4 are bonded through a high-heat-conductivity heat conduction adhesive.
In certain embodiments, the dislocation density of the SiC thermally conductive layer 1 is greater than 1020cm-3The SiC heat conduction layer 1 is of a cubic phase SiC single crystal structure.
In certain embodiments, the dislocation density of the SiC thermally conductive layer 1 is greater than 1020cm-3And the SiC heat conduction layer 1 has a hexagonal phase SiC single crystal structure.
In certain embodiments, the dislocation density of the SiC thermally conductive layer 1 is greater than 1020cm-3The SiC heat conduction layer 1 is a superlattice structure formed by overlapping cubic phase SiC single crystals and hexagonal phase SiC single crystals, wherein the thickness of the cubic phase SiC single crystals is 1.37-3.96 times that of the hexagonal phase SiC single crystals; wherein the total thickness of the superlattice structure formed by the cubic phase SiC single crystal and the hexagonal phase SiC single crystal is more than 100 microns and less than 200 microns.
In certain embodiments, the dislocation density of the diamond thermal conduction layer 2 is greater than 1017cm-3The diamond heat conduction layer 2 is an n-type diamond heat conduction layer or a p-type diamond heat conduction layer or an insulating diamond heat conduction layer; the thickness of the diamond heat conduction layer 2 is more than 100 microns and less than 200 microns.
In certain embodiments, the dislocation density of the graphene thermal layer 3 is greater than 1017cm-3The graphene heat conduction layer 3 is an n-type graphene heat conduction layer or a p-type graphene heat conduction layer; the thickness of the graphene heat conduction layer 3 is larger than 1 nanometer and smaller than 200 nanometers.
In some embodiments, the dislocation density of the aluminum nitride single crystal thermal conductive layer 4 is greater than 1017cm-3The aluminum nitride single crystal heat conduction layer 4 is an n-type aluminum nitride single crystal heat conduction layer or a p-type aluminum nitride single crystal heat conduction layer or an insulating aluminum nitride single crystal heat conduction layer; the thickness of the aluminum nitride single crystal heat conduction layer 4 is more than 100 microns and less than 200 microns; the crystal region of the aluminum nitride single crystal in the aluminum nitride single crystal heat conduction layer 4 is oriented to an m crystal face or an a crystal face or a c crystal face.
In the description herein, references to the description of the terms "one embodiment," "certain embodiments," "an illustrative embodiment," "an example," "a specific example," or "some examples," etc., mean that a particular feature, structure, material, or characteristic described in connection with the embodiment or example is included in at least one embodiment or example of the invention. In this specification, schematic representations of the above terms do not necessarily refer to the same embodiment or example. Furthermore, the particular features, structures, materials, or characteristics described may be combined in any suitable manner in any one or more embodiments or examples.
It is to be understood that the invention is not limited to the examples described above, but that modifications and variations may be effected thereto by those of ordinary skill in the art in light of the foregoing description, and that all such modifications and variations are intended to be within the scope of the invention as defined by the appended claims.
Claims (8)
1. The ultraviolet LED chip heat dissipation composite substrate is characterized by comprising a SiC heat conduction layer, a diamond heat conduction layer, a graphene heat conduction layer and an aluminum nitride single crystal heat conduction layer which are sequentially arranged from top to bottom, wherein the dislocation density of the diamond heat conduction layer is greater than 1017cm-3The diamond heat conduction layer is an n-type diamond heat conduction layer or a p-type diamond heat conduction layer or an insulating diamond heat conduction layer; diamondThe thickness of the stone heat conducting layer is more than 100 microns and less than 200 microns.
2. The ultraviolet LED chip heat dissipation composite substrate of claim 1, wherein adjacent heat conduction layers of the SiC heat conduction layer, the diamond heat conduction layer, the graphene heat conduction layer and the aluminum nitride single crystal heat conduction layer are bonded through a high-heat-conductivity heat conduction adhesive.
3. The uv LED chip die attach spreader composite substrate of claim 1, wherein the SiC thermal conductive layer has a dislocation density greater than 1020cm-3The SiC heat conducting layer is of a cubic phase SiC single crystal structure.
4. The uv LED chip die attach spreader composite substrate of claim 1, wherein the SiC thermal conductive layer has a dislocation density greater than 1020cm-3The SiC heat conducting layer is of a hexagonal phase SiC single crystal structure.
5. The uv LED chip die attach spreader composite substrate of claim 1, wherein the SiC thermal conductive layer has a dislocation density greater than 1020cm-3The SiC heat conduction layer is a superlattice structure formed by overlapping cubic phase SiC single crystals and hexagonal phase SiC single crystals, wherein the thickness of the cubic phase SiC single crystals is 1.37-3.96 times that of the hexagonal phase SiC single crystals; wherein the total thickness of the superlattice structure formed by the cubic phase SiC single crystal and the hexagonal phase SiC single crystal is more than 100 microns and less than 200 microns.
6. The ultraviolet LED chip die attach dissipation composite substrate of claim 1, wherein the graphene thermal conductive layer has a dislocation density greater than 1017cm-3The graphene heat conduction layer is an n-type graphene heat conduction layer or a p-type graphene heat conduction layer; the thickness of the graphene heat conduction layer is larger than 1 nanometer and smaller than 200 nanometers.
7. The ultraviolet LED chip heat-dissipating composite substrate according to claim 1, wherein the aluminum nitride single crystal thermal conductive layer has a dislocation densityDegree greater than 1017cm-3The aluminum nitride single crystal heat conduction layer is an n-type aluminum nitride single crystal heat conduction layer or a p-type aluminum nitride single crystal heat conduction layer or an insulating aluminum nitride single crystal heat conduction layer; the thickness of the aluminum nitride single crystal heat conduction layer is more than 100 microns and less than 200 microns.
8. The ultraviolet LED chip heat-dissipation composite substrate as recited in claim 7, wherein a crystal region of the aluminum nitride single crystal in the aluminum nitride single crystal heat-conducting layer is oriented to an m-plane, an a-plane or a c-plane.
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| CN202010763408.XA CN111769191B (en) | 2020-07-31 | 2020-07-31 | Ultraviolet LED chip heat dissipation composite substrate |
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| CN202010763408.XA CN111769191B (en) | 2020-07-31 | 2020-07-31 | Ultraviolet LED chip heat dissipation composite substrate |
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| CN111769191B true CN111769191B (en) | 2022-04-08 |
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| CN112151479B (en) * | 2020-11-24 | 2021-02-12 | 度亘激光技术（苏州）有限公司 | Heat sink for device, semiconductor device and preparation method of heat sink for device |
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| US6497763B2 (en) * | 2001-01-19 | 2002-12-24 | The United States Of America As Represented By The Secretary Of The Navy | Electronic device with composite substrate |
| US9048404B2 (en) * | 2009-07-06 | 2015-06-02 | Zhuo Sun | Thin flat solid state light source module |
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| US5392982A (en) * | 1988-11-29 | 1995-02-28 | Li; Chou H. | Ceramic bonding method |
| JP2010098135A (en) * | 2008-10-16 | 2010-04-30 | Sumitomo Electric Ind Ltd | Surface light emitting device and method of manufacturing the same |
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