CN111755591A - Piezoelectric film body and preparation method thereof, cavity type device and preparation method thereof - Google Patents
Piezoelectric film body and preparation method thereof, cavity type device and preparation method thereof Download PDFInfo
- Publication number
- CN111755591A CN111755591A CN202010575799.2A CN202010575799A CN111755591A CN 111755591 A CN111755591 A CN 111755591A CN 202010575799 A CN202010575799 A CN 202010575799A CN 111755591 A CN111755591 A CN 111755591A
- Authority
- CN
- China
- Prior art keywords
- layer
- substrate layer
- cavity
- substrate
- filling
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000002360 preparation method Methods 0.000 title abstract description 16
- 239000000758 substrate Substances 0.000 claims abstract description 236
- 238000011049 filling Methods 0.000 claims abstract description 124
- 238000002955 isolation Methods 0.000 claims abstract description 116
- 239000010409 thin film Substances 0.000 claims abstract description 99
- 239000000463 material Substances 0.000 claims abstract description 94
- 239000010408 film Substances 0.000 claims abstract description 81
- 238000000034 method Methods 0.000 claims abstract description 66
- 238000001039 wet etching Methods 0.000 claims abstract description 27
- 238000005530 etching Methods 0.000 claims description 60
- 230000003628 erosive effect Effects 0.000 claims description 32
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 17
- GQYHUHYESMUTHG-UHFFFAOYSA-N lithium niobate Chemical group [Li+].[O-][Nb](=O)=O GQYHUHYESMUTHG-UHFFFAOYSA-N 0.000 claims description 16
- 238000005468 ion implantation Methods 0.000 claims description 15
- 239000002210 silicon-based material Substances 0.000 claims description 12
- 239000000945 filler Substances 0.000 claims description 10
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 9
- 238000000151 deposition Methods 0.000 claims description 9
- 238000004519 manufacturing process Methods 0.000 claims description 9
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 9
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 9
- 238000005498 polishing Methods 0.000 claims description 8
- 238000000926 separation method Methods 0.000 claims description 8
- 238000000227 grinding Methods 0.000 claims description 7
- WSMQKESQZFQMFW-UHFFFAOYSA-N 5-methyl-pyrazole-3-carboxylic acid Chemical compound CC1=CC(C(O)=O)=NN1 WSMQKESQZFQMFW-UHFFFAOYSA-N 0.000 claims description 5
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 claims description 5
- 238000005260 corrosion Methods 0.000 abstract 2
- 230000007797 corrosion Effects 0.000 abstract 2
- 238000010438 heat treatment Methods 0.000 description 10
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 9
- 229910052710 silicon Inorganic materials 0.000 description 9
- 239000010703 silicon Substances 0.000 description 9
- 238000002513 implantation Methods 0.000 description 8
- -1 hydrogen ions Chemical class 0.000 description 7
- 230000008569 process Effects 0.000 description 7
- MWUXSHHQAYIFBG-UHFFFAOYSA-N Nitric oxide Chemical compound O=[N] MWUXSHHQAYIFBG-UHFFFAOYSA-N 0.000 description 6
- 238000004321 preservation Methods 0.000 description 6
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 5
- 230000000694 effects Effects 0.000 description 5
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 4
- 238000001994 activation Methods 0.000 description 4
- 230000004913 activation Effects 0.000 description 4
- 239000001307 helium Substances 0.000 description 4
- 229910052734 helium Inorganic materials 0.000 description 4
- 239000001257 hydrogen Substances 0.000 description 4
- 229910052739 hydrogen Inorganic materials 0.000 description 4
- 239000000377 silicon dioxide Substances 0.000 description 4
- 235000012239 silicon dioxide Nutrition 0.000 description 4
- 239000013078 crystal Substances 0.000 description 3
- 150000002500 ions Chemical class 0.000 description 3
- 230000003213 activating effect Effects 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 2
- 239000002131 composite material Substances 0.000 description 2
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000001312 dry etching Methods 0.000 description 2
- 239000011261 inert gas Substances 0.000 description 2
- 229910052757 nitrogen Inorganic materials 0.000 description 2
- 230000003071 parasitic effect Effects 0.000 description 2
- 238000000678 plasma activation Methods 0.000 description 2
- 238000001020 plasma etching Methods 0.000 description 2
- 230000001681 protective effect Effects 0.000 description 2
- 230000003746 surface roughness Effects 0.000 description 2
- 238000004458 analytical method Methods 0.000 description 1
- 229910001423 beryllium ion Inorganic materials 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000009713 electroplating Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 1
- 239000007943 implant Substances 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000000149 penetrating effect Effects 0.000 description 1
- 230000036632 reaction speed Effects 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N30/00—Piezoelectric or electrostrictive devices
- H10N30/50—Piezoelectric or electrostrictive devices having a stacked or multilayer structure
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H3/00—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators
- H03H3/007—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks
- H03H3/02—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N30/00—Piezoelectric or electrostrictive devices
- H10N30/01—Manufacture or treatment
- H10N30/07—Forming of piezoelectric or electrostrictive parts or bodies on an electrical element or another base
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H3/00—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators
- H03H3/007—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks
- H03H3/02—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks
- H03H2003/023—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks the resonators or networks being of the membrane type
Abstract
The embodiment of the application provides a piezoelectric film body and a preparation method thereof, a cavity type device and a preparation method thereof, wherein the piezoelectric film body comprises a first substrate layer, a buffer layer, a second substrate layer, an isolation layer and a piezoelectric film layer which are sequentially stacked; at least one cavity is etched on the second substrate layer and penetrates through the second substrate layer; the cavity is completely filled with the filling layer; the filling layer and the isolation layer are made of the same material, and the filling layer and the isolation layer are made of the same material, so that the filling layer and the isolation layer are corroded by the corrosion solution when the second substrate layer is subjected to wet etching treatment, and the second substrate layer and the piezoelectric thin film layer are not corroded by the corrosion solution. When the piezoelectric film body is used for preparing a cavity type device, the filling layer in the cavity and the isolation layer corresponding to the cavity can be removed by a wet etching method without damaging the second substrate layer, so that the cavity with the same size as the preset cavity can be obtained, and the piezoelectric film layer cannot be damaged by the wet etching method.
Description
Technical Field
The application belongs to the field of semiconductor element preparation, and particularly relates to a piezoelectric film body and a preparation method thereof, and a cavity type device and a preparation method thereof.
Background
With the development of technology, the speed of large data transmission between global systems is increasing, and piezoelectric film bulk acoustic wave devices are widely used in more and more ranges, such as timing clocks, mobile phone radio frequency modules, and the like. The piezoelectric film bulk acoustic wave device is a radio frequency filter, and generally adopts an electrode-piezoelectric film-electrode sandwich structure. The top electrode and the bottom electrode are respectively deposited on the upper surface and the lower surface of the piezoelectric film, the piezoelectric film has piezoelectricity, pressure can be generated after voltage is applied, the crystal film is subjected to mechanical deformation, and electric energy is converted into mechanical energy. When such crystals are mechanically compressed or extended, the mechanical energy is converted into electrical energy, forming an electrical charge on both sides of the crystal structure, causing a current to flow through the terminals and/or a voltage between the terminals. Therefore, the quality of the piezoelectric film in the piezoelectric film bulk acoustic wave device directly affects the use effect of the piezoelectric film bulk acoustic wave device.
For the piezoelectric film bulk acoustic wave device, a cavity is correspondingly prepared below the bottom electrode, so that the main body part of the piezoelectric film is suspended on the substrate layer, and energy is limited in the cavity during resonance. The existing method for preparing the cavity comprises the following steps: firstly, a preparation body comprising a substrate layer and a piezoelectric film layer is prepared, then, according to the preset size of a cavity, the cavity is etched in a dry method, such as plasma etching, from the substrate layer to the piezoelectric film layer until the lower surface of the piezoelectric film layer is exposed in the cavity, however, when the cavity is etched by adopting the method, excessive etching is easy to occur to damage the piezoelectric film layer, and the quality of the piezoelectric film layer is influenced.
Disclosure of Invention
The method aims to solve the problem that in the prior art, when a cavity is etched, excessive etching is easy to damage a piezoelectric film layer, so that the quality of the piezoelectric film is influenced.
The present application aims to provide the following aspects:
in a first aspect, an embodiment of the present application provides a piezoelectric thin film body, including a substrate layer, an isolation layer, and a piezoelectric thin film layer, which are sequentially stacked; the substrate layer comprises a first substrate layer, a buffer layer and a second substrate layer which are sequentially stacked; at least one cavity is etched on the second substrate layer and penetrates through the second substrate layer; the cavity is completely filled with a filling layer; the filling layer and the isolation layer are made of the same material, and the filling layer and the isolation layer are made of the same material, so that when the second substrate layer is subjected to wet etching treatment, an erosion solution erodes the filling layer and the isolation layer, and the erosion solution does not erode the second substrate layer and the piezoelectric thin film layer.
Preferably, the first substrate layer and the second substrate layer are made of the same material.
Preferably, the buffer layer and the filling layer are made of the same material.
Preferably, the first substrate layer is lithium niobate or silicon material.
Preferably, the second substrate layer is lithium niobate or silicon material.
Preferably, the isolation layer is a silicon oxide, silicon nitride, aluminum oxide or silicon nitride material.
Preferably, the piezoelectric thin film layer is a lithium niobate thin film layer or a lithium tantalate thin film layer.
Preferably, the substrate layer is an SOI substrate.
In a second aspect, an embodiment of the present application provides a method for manufacturing a piezoelectric thin film body, including:
preparing a substrate layer, wherein the substrate layer comprises a first substrate layer, a buffer layer and a second substrate layer which are sequentially stacked;
etching at least one cavity from the etching surface of the second substrate layer to the opposite surface of the etching surface according to a preset size to expose the buffer layer, wherein the cavity penetrates through the second substrate layer;
depositing a filling material on the second substrate layer with the cavity, wherein the filling material completely fills the cavity, a filling layer is formed in the cavity, the filling material covers the etching surface of the filled second substrate layer, the thickness of the isolation layer is preset, and an isolation layer is formed on the etching surface of the filled second substrate layer;
preparing a piezoelectric film layer on the isolation layer to obtain a piezoelectric film body;
wherein the filler satisfies: when wet etching treatment is carried out on the piezoelectric film body, the filling layer and the isolation layer are eroded by an erosion solution, and the second substrate layer and the piezoelectric film layer are not eroded by the erosion solution.
Preferably, the forming an isolation layer on the filled etched surface of the second substrate layer includes:
depositing a filling material on the second substrate layer with the cavity, wherein the thickness of the filling material covering the etched surface of the filled second substrate layer is larger than the preset isolation thickness;
and reducing the thickness of the filler covering the etched surface of the second substrate layer to a preset isolation thickness by using a grinding and polishing method to form an isolation layer, wherein the roughness of the isolation layer is less than 0.5 nm.
Preferably, the piezoelectric thin film layer is prepared on top of the isolation layer by using an ion implantation method and a bonding method, or by using a bonding method and a grinding and polishing method.
Preferably, the substrate layer is an SOI substrate.
In a third aspect, embodiments of the present application provide a method for manufacturing a cavity-type device using a piezoelectric film body, including: etching a first preset depth from the first substrate layer to the buffer layer corresponding to the cavity position;
and if the first preset depth is greater than or equal to the sum of the thicknesses of the first substrate layer and the buffer layer and is smaller than the sum of the thicknesses of the first substrate layer, the buffer layer and the second substrate layer, removing the filling layer and the isolation layer at the position corresponding to the cavity by using a first erosion solution, wherein the first erosion solution erodes the filling layer and the isolation layer, and the first erosion solution does not erode the second substrate layer and the piezoelectric thin film layer.
If the first preset depth is greater than or equal to the thickness of the first substrate layer and less than the sum of the thicknesses of the first substrate layer and the buffer layer, the method further comprises the following steps:
and removing the buffer layer at the position corresponding to the cavity by using a second erosion solution to expose the filling layer positioned at the top of the buffer layer, wherein the second erosion solution erodes the buffer layer, and the second erosion solution does not erode the first substrate layer and the second substrate layer.
In a fourth aspect, embodiments of the present application provide a piezoelectric film bulk acoustic wave device, including a piezoelectric film bulk with a cavity; the piezoelectric film body with the cavity comprises a first substrate layer, a buffer layer, a second substrate layer, an isolation layer and a piezoelectric film layer which are sequentially stacked, and the cavity penetrates through the first substrate layer, the buffer layer, the second substrate layer and the isolation layer.
In a fifth aspect, an embodiment of the present application provides a radio frequency module, including the piezoelectric thin film bulk acoustic wave device according to the fourth aspect.
In a sixth aspect, an embodiment of the present application provides a terminal device, including the radio frequency module of the fifth aspect.
According to the piezoelectric film body and the preparation method thereof provided by the embodiment of the application, the cavity is prepared on the second substrate layer in advance, then the filling material is adopted to completely fill the cavity to form the filling layer, so that the structure of the filled second substrate layer is the same as that of the second substrate layer before the cavity is not prepared, and the difference is that the material of the filling layer is different from that of the second substrate layer, and the material of the filling layer is the same as that of the isolation layer. Because the second substrate layer, the isolation layer and the filling layer are made of different materials, when the piezoelectric thin film body is used for preparing a cavity type device, the filling layer in the cavity and the isolation layer corresponding to the cavity can be removed by a wet etching method without damaging the structure of the second substrate layer, so that the cavity with the same size as the preset cavity can be obtained, and the piezoelectric thin film layer can not be damaged by the wet etching method.
Drawings
In order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, the drawings used in the description of the embodiments or the prior art will be briefly described below, and it is obvious that the drawings in the following description are some embodiments of the present invention, and those skilled in the art can also obtain other drawings according to the drawings without creative efforts.
Fig. 1 is a schematic structural diagram of a piezoelectric thin film body according to an embodiment of the present disclosure;
fig. 2 is a flowchart of a method for manufacturing a piezoelectric thin film body according to an embodiment of the present disclosure;
fig. 3 is a schematic structural diagram of a piezoelectric film bulk acoustic wave device according to an embodiment of the present disclosure.
Description of the reference numerals
1-substrate layer, 2-isolation layer, 3-piezoelectric film layer, 11-first substrate layer, 12-buffer layer, 13-second substrate layer and 14-filling layer.
Detailed Description
In order to make the technical solutions of the present invention better understood, the technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the drawings in the embodiments of the present invention, and it is obvious that the described embodiments are only a part of the embodiments of the present invention, and not all of the embodiments. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.
As described in the background section, for the piezoelectric film bulk acoustic wave device, a cavity is correspondingly formed below the bottom electrode, so that the main body of the piezoelectric film is suspended on the substrate layer, and energy is confined in the cavity at resonance. However, when the conventional method of etching a cavity in a substrate layer is adopted, the piezoelectric thin film layer is easily damaged by over etching, so that the quality of the piezoelectric thin film is affected. Therefore, in order to solve the above technical problem, an embodiment of the present application provides a piezoelectric thin film body, which may be used to manufacture a cavity-type device, such as a piezoelectric thin film body acoustic wave device.
Example one
Referring to fig. 1, a piezoelectric thin film body provided in an embodiment of the present application, for preparing a cavity device, such as a piezoelectric thin film body acoustic wave device, includes a substrate layer 1, an isolation layer 2, and a piezoelectric thin film layer 3 stacked in sequence; the substrate layer 1 comprises a first substrate layer 11, a buffer layer 12 and a second substrate layer 13 which are sequentially stacked; at least one cavity is etched on the second substrate layer 13, and the cavity penetrates through the second substrate layer 13; the cavity is completely filled with a filling layer 14; the filling layer 14 and the isolation layer 2 are made of the same material, and the filling layer 14 and the isolation layer 2 are made of the same material, so that when the second substrate layer 13 is subjected to wet etching treatment, an etching solution can etch the filling layer 14 and the isolation layer 2, and the etching solution does not etch the second substrate layer and the piezoelectric thin film layer 3.
As shown in fig. 1, the substrate layer 1 is a composite substrate structure including a first substrate layer 11, a buffer layer 12 and a second substrate layer 13, and the second substrate layer 13 and the buffer layer 12 in the substrate layer 1 can isolate signals transmitted by the piezoelectric thin film layer, so as to prevent the signals from leaking to the first substrate layer 11. The first substrate layer 11 may be made of an easily-etched material, for example, the first substrate layer 11 is made of lithium niobate or a silicon material, and the buffer layer 12 may be made of silicon oxide, silicon nitride, aluminum oxide or a silicon nitride material; the second substrate layer 13 may be made of lithium niobate or a silicon material, and the first substrate layer 11 may be made of the same material as or different from the second substrate layer 13, which is not limited in the present application, for example, the first substrate layer 11 is made of a silicon material, the second substrate layer 13 is made of a silicon material, and the buffer layer 12 is made of a silicon nitride material; for another example, the first substrate layer 11 is a lithium niobate material, the second substrate layer 13 is a silicon material, and the buffer layer 12 is a silicon oxide material.
In a specific embodiment, the substrate layer 1 may be an SOI substrate, an SOI (Silicon-On-Insulator), in which a buried oxide layer (buffer layer 12) is introduced between a top Silicon layer (second substrate layer 13) and a back substrate (first substrate layer 11), specifically, the second substrate layer 13 and the first substrate layer 11 in the SOI substrate are both made of Silicon materials, and the intermediate buffer layer 12 may be a Silicon oxide material. SOI substrates have incomparable advantages over bulk silicon: the dielectric isolation of components in the integrated circuit can be realized, and the parasitic latch-up effect in a bulk silicon CMOS circuit is thoroughly eliminated; the integrated circuit made of the SOI substrate also has the advantages of small parasitic capacitance, high integration density, high speed, simple process, small short channel effect, particular application to low-voltage and low-power consumption circuits and the like.
The isolation layer 2 is formed on the top surface of the second substrate layer 13 filled with the filling layer 14, and the piezoelectric thin film layer 3 is formed on the top surface of the isolation layer. The isolation layer 2 can play the effect of supporting the piezoelectric thin film layer 3 on the one hand, and can play the effect of preventing the signal leakage of the piezoelectric thin film layer 3 on the other hand. The layer structure between the buffer layer 12 and the isolation layer 2 is composed of a second substrate layer 13 and a filling layer 14, a cavity is etched on the second substrate layer 13, and the filling layer 14 is filled in the cavity of the second substrate layer 13. The cavity penetrates through the second substrate layer 13, the top surface of the filling layer 14 is in contact with the isolation layer 2, the bottom surface of the filling layer 14 is in contact with the buffer layer 12, the filling layer 14 is formed by depositing filling materials in the cavity, and the structure of the filling layer 14 is the same as that of the cavity.
The piezoelectric film body provided by the embodiment of the application is mainly used for preparing a cavity type device, and the quality of the piezoelectric film layer can be ensured in order not to damage the piezoelectric film layer when the cavity of the cavity type device is prepared. The technical idea of the application is that a cavity is prepared on the second substrate layer 13 in advance, then the cavity is completely filled with the filling material, and the filling layer 14 is formed in the cavity, so that the second substrate layer 13 after being filled has the same structure as the second substrate layer 13 before the cavity is not prepared, and the difference is that the material of the filling layer 14 is different from that of the second substrate layer 13, wherein the material of the filling layer 14 is the same as that of the isolation layer 2. The purpose of using different materials for the second substrate layer 13, the isolation layer 2 and the filling layer 14 is to remove the filling layer 14 in the cavity and the isolation layer 2 corresponding to the cavity by using a wet etching method without damaging the structure of the second substrate layer 13 when subsequently using the piezoelectric thin film body provided by the embodiment of the present application to prepare a cavity type device, so that a cavity with the same size as the preset cavity can be obtained, and the piezoelectric thin film layer 3 cannot be damaged by using the wet etching method. The wet etching method is a method that an etching solution can react with the filling layer 14 and the isolation layer 2, but the etching solution does not react with the second substrate layer 13 and the piezoelectric thin film layer 3, so that a part to be etched is removed without damaging the piezoelectric thin film layer 3.
Based on the above analysis, the materials of the filling layer 14 and the isolation layer 2 should satisfy that when the piezoelectric thin film body is subjected to wet etching treatment, the erosion solution can erode the filling layer 14 and the isolation layer 2, and the erosion solution does not erode the second substrate layer 13 and the piezoelectric thin film layer 3.
In this embodiment, the second substrate layer 13 may be made of lithium niobate or silicon, which is not limited in this embodiment. The isolation layer 2 and the filling layer 14 are made of the same material, for example, the filling layer 14 and the isolation layer 2 may be made of silicon oxide, nitrogen oxide, aluminum oxide, or aluminum nitride. In one example, the second substrate layer 13 is silicon, the filling layer 14 is silicon dioxide, and the isolation layer 2 is silicon dioxide; in another example, second substrate layer 13 is formed from lithium niobate, filler layer 14 is formed from alumina, and separator layer 2 is formed from alumina.
The piezoelectric thin film layer 3 in this embodiment may be a lithium niobate thin film layer or a lithium tantalate thin film layer, which is not limited in this embodiment.
Further, the buffer layer 12 may be made of the same material as the filling layer 14. If the same material is used for the buffer layer 12 and the filling layer 14, the buffer layer 12 corresponding to the cavity may be removed by wet etching when the cavity device is manufactured.
The isolation layer 2 and the filling layer 14 are made of the same material, and therefore, firstly, when the piezoelectric thin film body is subjected to wet etching treatment, the filling layer 14 and the isolation layer 2 at the position corresponding to the cavity can be removed by using an erosion solution, and the treatment process is simple; secondly, in the process of preparing the piezoelectric film body, a filling material can be directly selected, and the filling layer 14 and the isolation layer 2 are prepared by one-step forming, so that the preparation process is simple.
Example two
Referring to fig. 2, fig. 2 is a flowchart of a method for manufacturing a piezoelectric thin film body according to an embodiment of the present disclosure. As shown in fig. 2, the preparation method comprises the following steps:
The substrate layer 1 can adopt a prefabricated composite substrate structure in which a first substrate layer 11, a buffer layer 12 and a second substrate layer 13 are sequentially laminated, for example, an SOI substrate is directly adopted as the substrate layer 1; the first substrate layer 11 may also be prepared first, and then the buffer layer 12 and the second substrate layer 13 are sequentially prepared on the first substrate layer 11 to obtain the substrate layer 1, which is not limited in this application.
The first substrate layer 11 may be made of the same material as the second substrate layer 13, or may be made of a different material from the second substrate layer 13. First substrate layer 11 can select for use lithium niobate or silicon material, and second substrate layer 12 also can select for use lithium niobate or silicon material, and buffer layer 12 can select for use silicon oxide, silicon nitride, aluminium oxide or silicon nitride material, and this application does not restrict this.
And 2, etching at least one cavity from the etching surface of the second substrate layer 13 to the opposite surface of the etching surface according to a preset size to expose the buffer layer 12, wherein the cavity penetrates through the second substrate layer 13.
And taking the top surface of the second substrate layer 13 as an etching surface, performing full through etching from the etching surface to the surface opposite to the etching surface, and etching to penetrate through the second substrate layer 13 until the top surface of the buffer layer 12 is exposed, wherein a cavity obtained by the full through etching penetrates through the second substrate layer 13 (as shown in fig. 1), and the etched second substrate layer is provided with at least one cavity.
The size of the etched cavity should correspond to the size of the cavity device to be prepared later, and the specific size of the cavity is not limited in this application. For example: the width of the cavity may be 50 μm to 5mm, the length of the cavity may be 100 μm to 10mm, and the depth of the cavity may be 50 μm to 500 μm. The depth of the cavity refers to the vertical distance of the cavity between the etched side and the opposite side of the etched side. It should be noted that the cross section of the cavity illustrated in fig. 1 is rectangular, and it should be understood that the cavity is not limited to the shape illustrated in fig. 1, for example, the cross section of the cavity may also be trapezoidal or other shapes.
In a specific example, an SOI substrate having a size of 4 inches, a thickness of 0.5mm, and a smooth surface is prepared, and the SOI substrate includes, from top to bottom, top silicon (second substrate layer not etched), silicon oxide (buffer layer), and bottom silicon (first substrate layer), wherein the thickness of the second substrate layer may be 50nm to 50 μm, the total thickness of the buffer layer and the first substrate layer may be 50nm to 5 μm, for example, the thickness of the second substrate layer is 220nm, and the total thickness of the buffer layer and the first substrate layer is 2 μm. And etching the SOI substrate by using a dry etching method to form a plurality of cavities penetrating through the second substrate layer, wherein the size of each cavity is as follows: 500 μm in width, 2000 μm in length and 110 μm in depth. Wherein, the dry etching can be mechanical etching or plasma etching.
The second substrate layer 13 obtained after etching in step 2 has at least one cavity.
And 3, depositing a filling material on the second substrate layer 13 with the cavity, wherein the filling material completely fills the cavity, a filling layer 14 is formed in the cavity, the filling material covers the etched surface of the filled second substrate layer 13 with a preset isolation thickness, and an isolation layer 2 is formed on the etched surface of the filled second substrate layer 13.
The method for obtaining the filling layer and the isolation layer is not limited in the embodiment of the application, and in an implementation mode, the filling layer and the isolation layer can be prepared by one-step process; in another implementation manner, the filling layer and the isolation layer may also be prepared through different steps, for example, filling the cavity with the filling material, completely filling the cavity, and then depositing the filling material on the etched surface of the second substrate layer 13 after filling to obtain the isolation layer.
And (3) completely filling the etched cavity in the step (2) with a filling material which is different from the material of the second substrate layer 13, and forming a filling layer 132 in the cavity.
The filler material should be selected such that the etching solution attacks the filler material when the wet etching process is performed on the second substrate layer 13, and the etching solution does not attack the second substrate layer 13.
For example, the material of the second substrate layer 13 is silicon, the filler is silicon dioxide, the etching solution is HF, and when the second substrate layer 13 is subjected to wet etching, the HF etches the silicon dioxide but does not etch the silicon, so that the second substrate layer 13 with the cavity can be obtained after the second substrate layer 13 is subjected to wet etching.
The specific method for depositing the filling material in the cavity can be sputtering, evaporation or electroplating. For example, if the depth of the cavity is 110 μm, then the filling material with a thickness of 110 μm is correspondingly deposited in the cavity, or the filling material with a thickness greater than 110 μm is deposited, so that the cavity is completely filled.
The isolation layer 2 can support the piezoelectric thin film layer 3 on the one hand, and can prevent the piezoelectric thin film layer 3 from signal leakage on the other hand. The isolation layer 2 and the filling layer 14 are made of the same material, for example, the isolation layer 2 and the filling layer 14 are made of silicon oxide, nitrogen oxide, aluminum oxide or aluminum nitride material. The isolation layer 2 can also meet the requirement that when wet etching treatment is carried out on the isolation layer 2, an erosion solution only erodes the isolation layer 2, and the erosion solution does not erode the second substrate layer 13 and the piezoelectric thin film layer 3.
Because the isolation layer 2 is made of the same material as the filling layer 14, the filling material can be directly deposited on the etching surface of the filled second substrate layer 13 continuously until the filling material covers the etching surface of the second substrate layer 13 and the isolation thickness is preset to form the isolation layer 2, and the isolation layer is deposited after the surface of the filling layer 14 in the step 3 is not required to be further processed, so that the preparation process is simpler.
In the piezoelectric film body, certain requirements are made on the smoothness of an interface, and the roughness of the interface is generally required to be less than 0.5nm, so that energy loss caused by scattering of sound waves on the interface can be avoided. Therefore, in order to obtain the isolation layer 2 with lower roughness, the thickness of the filler covering the etched surface of the filled second substrate layer 13 may be made larger than the predetermined isolation layer thickness, and then the thickness of the filler covering the etched surface is mechanically reduced to the predetermined isolation layer thickness by grinding and polishing, so as to obtain the isolation layer 2 with low surface roughness, for example, the surface roughness of the isolation layer 2 may be reduced to less than 0.5 nm.
And 4, preparing the piezoelectric film layer 3 on the isolation layer 2 to obtain the piezoelectric film body.
The prepared piezoelectric film body comprises a substrate layer 1, an isolation layer 2 and a piezoelectric film layer 3 which are sequentially stacked.
The method of manufacturing the piezoelectric thin film layer is not limited in the present application, and for example, the piezoelectric thin film layer 3 may be manufactured on the separation layer 2 by using an ion implantation method and a bonding method, or by using a bonding method and a lapping and polishing method.
If the piezoelectric thin film layer 3 is prepared on the top of the isolation layer 2 by using ion implantation and bonding, in the embodiment of the present application, any feasible ion implantation method and any feasible bonding method may be combined to prepare the piezoelectric thin film layer 3, which is not limited in the present application.
In one implementation, the piezoelectric thin film layer 3 is obtained by ion implantation and bonding, and the method includes the following steps:
step 101, performing ion implantation on a thin film material, and dividing the thin film material into a piezoelectric thin film layer, a separation layer and a residual layer in sequence.
In the embodiment of the present application, the thin film material refers to a base material having a certain thickness and used for obtaining the piezoelectric thin film layer. The thin film material may be a piezoelectric material such as lithium niobate or lithium tantalate, which is not limited in this application.
Ion implantation may be performed from one side of the thin film material toward the inside of the thin film material, thereby forming the piezoelectric thin film layer, the separation layer, and the residual layer on the thin film material.
The ion implantation method in the embodiments of the present application is not particularly limited, and any ion implantation method in the prior art may be used, and the implanted ions may be ions that can generate gas by heat treatment, such as hydrogen ions or helium ions, and the implantation dose may be 3 × 10 when hydrogen ions are implanted16ions/cm2～8×1016ions/cm2The implantation energy may be 120 KeV-400 KeV, and the implantation dosage may be 1 × 10 when implanting helium ions16ions/cm2～1×1017ions/cm2The implantation energy may be 50KeV to 1000KeV, for example, when implanting hydrogen ions, the implantation dose may be 4 × 1016ions/cm2The implantation energy can be 180KeV, and the implantation dosage is 4 × 10 when implanting helium ions16ions/cm2The implantation energy was 200 KeV.
In the embodiment of the application, the thickness of the piezoelectric thin film layer can be adjusted by adjusting the ion implantation depth, and specifically, the larger the ion implantation depth is, the larger the thickness of the prepared piezoelectric thin film layer is; conversely, the smaller the depth of ion implantation, the smaller the thickness of the piezoelectric thin film layer prepared.
And 102, bonding the ion implantation surface of the film material with the isolation layer 2 to obtain a bonded body.
In the embodiment of the present application, the bond is formed after a thin film material is bonded to an isolation layer 2, wherein the thin film material is not peeled off from the isolation layer 2, and the ion implantation surface is a surface that implants ions into the thin film material.
The method for bonding the thin film material and the isolation layer 2 is not particularly limited in the present application, and any method in the prior art for bonding the thin film material and the isolation layer 2 may be adopted, for example, the bonding surface of the thin film material is subjected to surface activation, the bonding surface of the isolation layer 2 is also subjected to surface activation, and then the two activated surfaces are bonded to obtain the bonded body.
The method for activating the surface of the bonding surface of the thin film material is not particularly limited, and any method of activating the surface of the thin film material in the prior art, such as plasma activation and chemical solution activation, may be adopted; similarly, the present application does not limit the bonding surface of the isolation layer 2 in any way, and any method that can be used in the prior art for surface activation of the bonding surface of the isolation layer 2, such as plasma activation, can be used.
And 103, carrying out heat treatment on the bonding body, and separating the residual layer from the piezoelectric film layer to obtain the piezoelectric film body.
In an implementation manner, the bonded body is subjected to heat treatment, the temperature of the heat treatment is 100-600 ℃, bubbles are formed in the separation layer during the heat treatment, for example, H ions form hydrogen, He ions form helium, and the like, the bubbles in the separation layer are connected into one piece as the heat treatment progresses, finally, the separation layer is cracked, the residual layer is separated from the piezoelectric thin film layer, so that the residual layer is stripped from the bonded body, and a piezoelectric thin film layer is formed on the surface of the separation layer.
In the embodiment of the present application, an achievable heat treatment manner is to put the bonding body into a heating device, first raise the temperature to a preset temperature, and then keep the temperature at the preset temperature. Among them, preferably, the heat-preserving conditions include: the holding time may be 1 minute to 48 hours, for example, 3 hours, the holding temperature may be 100 ℃ to 600 ℃, for example, 400 ℃, and the holding atmosphere may be in a vacuum atmosphere or in a protective atmosphere of at least one of nitrogen and an inert gas.
In another implementation, the method for obtaining the piezoelectric thin film layer by a bonding method and a grinding and polishing method comprises the following steps:
firstly, bonding the prepared thin film material and the isolation layer to obtain a bonded body, wherein the manner of bonding the thin film material and the isolation layer can refer to the description of step 102, and is not described herein again. And then, carrying out heat treatment on the bonding body to improve the bonding force between the film material and the isolating layer. For example, the bonding body is placed in a heating device and is subjected to heat preservation at a high temperature, the heat preservation process is performed in a vacuum environment or in a protective atmosphere formed by at least one of nitrogen and inert gas, the heat preservation temperature can be 100 ℃ to 600 ℃, for example, the heat preservation time is 400 ℃, and the heat preservation time can be 1 minute to 48 hours, for example, the heat preservation time is 3 hours. And finally, mechanically grinding and polishing the thin film material on the bonding body, and thinning the thin film material to the preset thickness of the piezoelectric thin film layer. For example, if the thickness of the preset piezoelectric thin film layer is 20 μm, the thin film material on the bonding body may be first thinned to 22 μm by mechanical grinding, and then polished to 20 μm, so as to obtain the piezoelectric thin film layer. The thickness of the piezoelectric film layer can be 400nm-100 μm, and the piezoelectric film layer can be made of lithium niobate or lithium tantalate.
According to the preparation method of the piezoelectric film body, the cavity with the required size is etched on the second substrate layer in advance, then the cavity is completely filled with the material which can be removed by the wet etching method, and finally the isolation layer and the piezoelectric film layer are sequentially prepared on the completely filled substrate layer, wherein the isolation layer is made of the material which is the same as the filling layer, so that the filling layer and the isolation layer can be obtained through one-time deposition, and the preparation process is simple.
EXAMPLE III
For example, in order to obtain the piezoelectric film bulk acoustic wave device, a structure at a corresponding position below the piezoelectric film needs to be removed according to a preset cavity position and size to form a cavity. In the embodiment of the present application, the piezoelectric thin film body provided in the first embodiment is utilized to prepare a cavity type device, so as to overcome the problem that in the prior art, when a cavity is etched, excessive etching is easily generated to damage the piezoelectric thin film layer, thereby affecting the quality of the piezoelectric thin film.
The method for preparing the cavity type device by using the piezoelectric film body mainly comprises the following steps:
step 201, etching a first preset depth from the first substrate layer 11 to the buffer layer 12 corresponding to the cavity position.
In an embodiment, the cavity of the second substrate layer of the piezoelectric thin film body is filled with a filling layer, where a position and a size of the filling layer correspond to a position and a size of a preset cavity. Therefore, in order to remove the filling layer to obtain the corresponding cavity, the buffer layer and the first substrate layer under the filling layer are removed first. Specifically, a first preset depth is etched from the first substrate layer 11 to the buffer layer 12, and the first preset depth is etched to expose the filling layer, so that wet etching treatment is further performed on the filling layer and the isolation layer above the filling layer.
In order to avoid over-etching, the first predetermined depth should not be greater than the sum of the thicknesses of the first substrate layer 11, the buffer layer 12 and the second substrate layer 12. That is, in step 201, the filling layer may be etched from the first substrate layer 11 toward the buffer layer 12, or the buffer layer may be etched from the first substrate layer 11 toward the buffer layer 12.
Step 202, if the first preset depth is greater than or equal to the sum of the thicknesses of the first substrate layer 11 and the buffer layer 12 and is smaller than the sum of the thicknesses of the first substrate layer 11, the buffer layer 12 and the second substrate layer 12, removing the filling layer and the isolation layer at the position corresponding to the cavity by using a first erosion solution, wherein the first erosion solution erodes the filling layer and the isolation layer, and the first erosion solution does not erode the second substrate layer 13 and the piezoelectric thin film layer.
In the step 202, it is equivalent to etch the filling layer from the first substrate layer 11 to the buffer layer 12, and the etched piezoelectric thin film body includes the remaining filling layer, the isolation layer located on the top of the filling layer, and the piezoelectric thin film layer.
And carrying out wet etching treatment on the etched piezoelectric film body, removing the residual filling layer and the isolation layer at the position corresponding to the cavity by using a first etching solution, wherein the first etching solution etches the filling layer and the isolation layer, and the first etching solution does not etch the second substrate layer 13 and the piezoelectric film layer.
The first etching solution may react with the filling layer and the isolation layer, but not with the second substrate layer 13 and the piezoelectric thin film layer. Therefore, after the wet etching process, the first etching solution can remove the filling layer filled in the cavity without damaging the structure of the second substrate layer 13, so as to obtain the cavity-type device with the cavity as shown in fig. 3.
As shown in fig. 3, a cavity type device, a piezoelectric film bulk acoustic wave device, which is prepared by using the piezoelectric film bulk described in any of the above embodiments, includes the piezoelectric film bulk with the cavity; the piezoelectric film body with the cavity comprises a first substrate layer, a buffer layer, a second substrate layer, an isolation layer and a piezoelectric film layer which are sequentially stacked, and the cavity penetrates through the first substrate layer, the buffer layer, the second substrate layer and the isolation layer. According to the specific application scenario of the cavity device, the structure in fig. 3 may be further processed, for example, a bottom electrode is deposited under the exposed piezoelectric thin film layer in the cavity, a top electrode layer is deposited on the piezoelectric thin film layer at a position opposite to the bottom electrode layer, and the piezoelectric thin film acoustic wave device is prepared.
The present application further provides a radio frequency module including the piezoelectric film bulk acoustic wave device described in the above embodiments.
The application also provides a terminal device, and the terminal device comprises the radio frequency module.
Further, in order to avoid the isolating layer to react too fast with the erosion solution, lead to the erosion solution to erode not with the isolating layer of cavity corresponding position, when getting rid of the isolating layer, can choose for use the erosion solution of controlling the reaction rate more easily, get rid of the isolating layer. Of course, the same first etching solution as that used for removing the filling layer may be selected, and then the reaction speed of the first etching solution and the isolation layer may be controlled by adjusting the reaction conditions.
Step 203, if the first preset depth is greater than or equal to the thickness of the first substrate layer and less than the sum of the thicknesses of the first substrate layer and the buffer layer, removing the buffer layer at the position corresponding to the cavity by using a second etching solution to expose the filling layer at the top of the buffer layer, wherein the buffer layer is etched by the second etching solution, and the first substrate layer and the second substrate layer 13 are not etched by the second etching solution, and then the step 202 is executed.
In step 203, the buffer layer is etched from the first substrate layer 11 to the buffer layer 12, and then the remaining buffer layer is removed to expose the filling layer. The method for removing the remaining buffer layer is not limited in the present application, and for example, the remaining buffer layer may be removed by a wet etching method, or the remaining buffer layer may be removed by a mechanical etching method.
And if the residual buffer layer is removed by a wet etching method, removing the buffer layer at the position corresponding to the cavity by using a second etching solution to expose the filling layer at the top of the buffer layer, wherein the second etching solution etches the buffer layer, and the second etching solution does not etch the first substrate layer and the second substrate layer 13.
If the buffer layer and the filling layer are made of the same material, the same etching solution can be selected for the second etching solution and the first etching solution, and further, the same etching solution is directly used for sequentially etching the rest buffer layer, the remaining filling layer and the isolation layer corresponding to the filling layer.
According to the method for preparing the cavity type device by using the piezoelectric film body, provided by the embodiment of the application, the cavity is prepared by adopting a wet etching method, specifically, the filling layer deposited in the cavity in advance and the isolation layer at the position corresponding to the cavity are corroded by using an erosion solution to obtain the cavity type device, the filling layer can be completely removed by the method to obtain the cavity with the preset size, and the piezoelectric film layer cannot be damaged by excessive etching, so that the quality of the piezoelectric film layer is ensured.
The present application has been described in detail with reference to specific embodiments and illustrative examples, but the description is not intended to limit the application. Those skilled in the art will appreciate that various equivalent substitutions, modifications or improvements may be made to the presently disclosed embodiments and implementations thereof without departing from the spirit and scope of the present disclosure, and these fall within the scope of the present disclosure. The protection scope of this application is subject to the appended claims.
Claims (12)
1. A piezoelectric film body is characterized by comprising a substrate layer, an isolation layer and a piezoelectric film layer which are sequentially stacked;
the substrate layer comprises a first substrate layer, a buffer layer and a second substrate layer which are sequentially stacked;
at least one cavity is etched on the second substrate layer and penetrates through the second substrate layer;
the cavity is completely filled with a filling layer;
the filling layer and the isolation layer are made of the same material, and the filling layer and the isolation layer are made of the same material, so that when the second substrate layer is subjected to wet etching treatment, an erosion solution erodes the filling layer and the isolation layer, and the erosion solution does not erode the second substrate layer and the piezoelectric thin film layer.
2. The piezoelectric film body of claim 1, wherein the first substrate layer is the same material as the second substrate layer; the buffer layer and the filling layer are made of the same material.
3. The piezoelectric thin film body according to claim 1, wherein the first substrate layer is a lithium niobate or silicon material, and the second substrate layer is a lithium niobate or silicon material;
the isolating layer is made of silicon oxide, silicon nitride, aluminum oxide or silicon nitride material; the piezoelectric thin film layer is a lithium niobate thin film layer or a lithium tantalate thin film layer.
4. The piezoelectric film body of claim 1, wherein the substrate layer is an SOI substrate.
5. A method of manufacturing a piezoelectric thin film body, comprising:
preparing a substrate layer, wherein the substrate layer comprises a first substrate layer, a buffer layer and a second substrate layer which are sequentially stacked;
etching at least one cavity from the etching surface of the second substrate layer to the opposite surface of the etching surface according to a preset size to expose the buffer layer, wherein the cavity penetrates through the second substrate layer;
depositing a filling material on the second substrate layer with the cavity, wherein the filling material completely fills the cavity, a filling layer is formed in the cavity, the filling material covers the etching surface of the filled second substrate layer, the thickness of the isolation layer is preset, and an isolation layer is formed on the etching surface of the filled second substrate layer;
preparing a piezoelectric film layer on the isolation layer to obtain a piezoelectric film body;
wherein the filler satisfies: when wet etching treatment is carried out on the piezoelectric film body, the filling layer and the isolation layer are eroded by an erosion solution, and the second substrate layer and the piezoelectric film layer are not eroded by the erosion solution.
6. The method according to claim 5, wherein forming an isolation layer on the filled etched surface of the second substrate layer comprises:
depositing a filling material on the second substrate layer with the cavity, wherein the thickness of the filling material covering the etched surface of the filled second substrate layer is larger than the preset isolation thickness;
and reducing the thickness of the filler covering the etched surface of the second substrate layer to a preset isolation thickness by using a grinding and polishing method to form an isolation layer, wherein the roughness of the isolation layer is less than 0.5 nm.
7. The production method according to claim 5, wherein a piezoelectric thin film layer is produced on top of the separation layer by using an ion implantation method and a bonding method, or by using a bonding method and a lapping and polishing method.
8. A method of fabricating a cavity device using the piezoelectric thin film body of any one of claims 1-4, comprising:
etching a first preset depth from the first substrate layer to the buffer layer corresponding to the cavity position;
and if the first preset depth is greater than or equal to the sum of the thicknesses of the first substrate layer and the buffer layer and is smaller than the sum of the thicknesses of the first substrate layer, the buffer layer and the second substrate layer, removing the filling layer and the isolation layer at the position corresponding to the cavity by using a first erosion solution, wherein the first erosion solution erodes the filling layer and the isolation layer, and the first erosion solution does not erode the second substrate layer and the piezoelectric thin film layer.
9. The method of claim 8, wherein if the first predetermined depth is greater than or equal to the thickness of the first substrate layer and less than the sum of the thicknesses of the first substrate layer and the buffer layer, the method further comprises the steps of:
and removing the buffer layer at the position corresponding to the cavity by using a second erosion solution to expose the filling layer positioned at the top of the buffer layer, wherein the second erosion solution erodes the buffer layer, and the second erosion solution does not erode the first substrate layer and the second substrate layer.
10. A piezoelectric film bulk acoustic wave device comprising a piezoelectric film body having a cavity;
the piezoelectric film body with the cavity comprises a first substrate layer, a buffer layer, a second substrate layer, an isolation layer and a piezoelectric film layer which are sequentially stacked, and the cavity penetrates through the first substrate layer, the buffer layer, the second substrate layer and the isolation layer.
11. A radio frequency module comprising the piezoelectric thin film bulk acoustic wave device of claim 10.
12. A terminal device characterized by comprising the radio frequency module of claim 11.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202010575799.2A CN111755591A (en) | 2020-06-22 | 2020-06-22 | Piezoelectric film body and preparation method thereof, cavity type device and preparation method thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202010575799.2A CN111755591A (en) | 2020-06-22 | 2020-06-22 | Piezoelectric film body and preparation method thereof, cavity type device and preparation method thereof |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN111755591A true CN111755591A (en) | 2020-10-09 |
Family
ID=72676391
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202010575799.2A Pending CN111755591A (en) | 2020-06-22 | 2020-06-22 | Piezoelectric film body and preparation method thereof, cavity type device and preparation method thereof |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN111755591A (en) |
Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2005303573A (en) * | 2004-04-09 | 2005-10-27 | Toshiba Corp | Thin film piezoelectric resonator and its manufacturing method |
| CN1883115A (en) * | 2003-10-30 | 2006-12-20 | 阿瓦戈科技无线Ip（新加坡）股份有限公司 | Film bulk acoustic resonator (FBAR) devices with simplified packaging |
| US20070090892A1 (en) * | 2005-10-18 | 2007-04-26 | Larson John D Iii | Acoustic galvanic isolator incorporating single decoupled stacked bulk acoustic resonator |
| JP2008048040A (en) * | 2006-08-11 | 2008-02-28 | Matsushita Electric Ind Co Ltd | Piezoelectric thin-film resonator and its manufacturing method |
| JP2009188939A (en) * | 2008-02-08 | 2009-08-20 | Tdk Corp | Thin film bulk wave acoustic resonator |
| CN101977026A (en) * | 2010-11-01 | 2011-02-16 | 中国电子科技集团公司第二十六研究所 | Manufacturing method of cavity-type film bulk acoustic resonator (FBAR) |
| CN111162746A (en) * | 2020-01-18 | 2020-05-15 | 杭州见闻录科技有限公司 | Flat piezoelectric layer structure of bulk acoustic wave resonator and manufacturing process |
-
2020
- 2020-06-22 CN CN202010575799.2A patent/CN111755591A/en active Pending
Patent Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1883115A (en) * | 2003-10-30 | 2006-12-20 | 阿瓦戈科技无线Ip（新加坡）股份有限公司 | Film bulk acoustic resonator (FBAR) devices with simplified packaging |
| JP2005303573A (en) * | 2004-04-09 | 2005-10-27 | Toshiba Corp | Thin film piezoelectric resonator and its manufacturing method |
| US20070090892A1 (en) * | 2005-10-18 | 2007-04-26 | Larson John D Iii | Acoustic galvanic isolator incorporating single decoupled stacked bulk acoustic resonator |
| JP2008048040A (en) * | 2006-08-11 | 2008-02-28 | Matsushita Electric Ind Co Ltd | Piezoelectric thin-film resonator and its manufacturing method |
| JP2009188939A (en) * | 2008-02-08 | 2009-08-20 | Tdk Corp | Thin film bulk wave acoustic resonator |
| CN101977026A (en) * | 2010-11-01 | 2011-02-16 | 中国电子科技集团公司第二十六研究所 | Manufacturing method of cavity-type film bulk acoustic resonator (FBAR) |
| CN111162746A (en) * | 2020-01-18 | 2020-05-15 | 杭州见闻录科技有限公司 | Flat piezoelectric layer structure of bulk acoustic wave resonator and manufacturing process |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| KR101635151B1 (en) | Piezoelectric device and method of manufacturing piezoelectric device | |
| JP3395661B2 (en) | Method for manufacturing SOI wafer | |
| CN110880920B (en) | Preparation method of heterogeneous thin film structure | |
| EP2624451B1 (en) | Method for manufacturing piezoelectric device | |
| JPH11145438A (en) | Method of manufacturing soi wafer and soi wafer manufactured by the method | |
| CN114070227B (en) | Preparation method of aluminum nitride acoustic wave resonator and resonator | |
| US11942915B2 (en) | Bulk acoustic wave resonator device and method of manufacturing thereof | |
| KR20150139856A (en) | Advanced thermally compensated surface acoustic wave device and fabrication method | |
| CN112260660B (en) | Composite substrate, composite film and preparation method thereof | |
| CN114420834A (en) | Thin film preparation method based on oblique bonding and composite thin film thereof | |
| CN110246757A (en) | A kind of preparation method of the monocrystal thin films based on cmos circuit substrate | |
| CN111834518B (en) | Piezoelectric single crystal film on multilayer film structure substrate and preparation method thereof | |
| CN111740003A (en) | Piezoelectric film body and preparation method thereof, cavity type device and preparation method thereof | |
| CN113193109A (en) | Preparation method of composite film and composite film | |
| JP2023143949A (en) | Process for manufacturing substrate for high frequency filter | |
| CN111755591A (en) | Piezoelectric film body and preparation method thereof, cavity type device and preparation method thereof | |
| US20240030883A1 (en) | Process for manufacturing a piezoelectric structure for a radiofrequency device and which can be used to transfer a piezoelectric layer, and process for transferring such a piezoelectric layer | |
| CN113411064A (en) | Film bulk acoustic wave device and preparation method thereof | |
| CN114388688A (en) | Blackened single crystal piezoelectric composite film based on plasma etching and preparation method thereof | |
| CN105140107A (en) | Preparation method for substrate with charge trap and insulation buried layer | |
| CN114639635B (en) | Method for peeling single crystal thin film, single crystal thin film and electronic component | |
| CN112564662B (en) | Composite substrate, preparation method thereof and electronic component | |
| US20230291377A1 (en) | Process for manufacturing a piezoelectric structure for a radiofrequency device which structure can be used to transfer a piezoelectric layer, and process for transferring such a piezoelectric layer | |
| CN111527584B (en) | Method for preparing remainder of donor substrate, substrate produced by the method and use thereof | |
| JP2003179216A (en) | Soi wafer |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination |