CN111740003A - Piezoelectric film body and preparation method thereof, cavity type device and preparation method thereof - Google Patents
Piezoelectric film body and preparation method thereof, cavity type device and preparation method thereof Download PDFInfo
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- CN111740003A CN111740003A CN202010574656.XA CN202010574656A CN111740003A CN 111740003 A CN111740003 A CN 111740003A CN 202010574656 A CN202010574656 A CN 202010574656A CN 111740003 A CN111740003 A CN 111740003A
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- 239000000758 substrate Substances 0.000 claims abstract description 137
- 238000002955 isolation Methods 0.000 claims abstract description 111
- 238000011049 filling Methods 0.000 claims abstract description 110
- 239000000463 material Substances 0.000 claims abstract description 82
- 238000000034 method Methods 0.000 claims abstract description 71
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- MWUXSHHQAYIFBG-UHFFFAOYSA-N Nitric oxide Chemical compound O=[N] MWUXSHHQAYIFBG-UHFFFAOYSA-N 0.000 claims description 12
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical group O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 12
- GQYHUHYESMUTHG-UHFFFAOYSA-N lithium niobate Chemical group [Li+].[O-][Nb](=O)=O GQYHUHYESMUTHG-UHFFFAOYSA-N 0.000 claims description 10
- 238000000151 deposition Methods 0.000 claims description 9
- 238000004519 manufacturing process Methods 0.000 claims description 9
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- WSMQKESQZFQMFW-UHFFFAOYSA-N 5-methyl-pyrazole-3-carboxylic acid Chemical compound CC1=CC(C(O)=O)=NN1 WSMQKESQZFQMFW-UHFFFAOYSA-N 0.000 claims description 5
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 claims description 4
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 4
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 claims description 3
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- 229910052710 silicon Inorganic materials 0.000 description 11
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N30/00—Piezoelectric or electrostrictive devices
- H10N30/704—Piezoelectric or electrostrictive devices based on piezoelectric or electrostrictive films or coatings
- H10N30/706—Piezoelectric or electrostrictive devices based on piezoelectric or electrostrictive films or coatings characterised by the underlying bases, e.g. substrates
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H3/00—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators
- H03H3/007—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks
- H03H3/02—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N30/00—Piezoelectric or electrostrictive devices
- H10N30/01—Manufacture or treatment
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N30/00—Piezoelectric or electrostrictive devices
- H10N30/80—Constructional details
- H10N30/85—Piezoelectric or electrostrictive active materials
- H10N30/853—Ceramic compositions
- H10N30/8542—Alkali metal based oxides, e.g. lithium, sodium or potassium niobates
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H3/00—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators
- H03H3/007—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks
- H03H3/02—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks
- H03H2003/023—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks the resonators or networks being of the membrane type
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- Engineering & Computer Science (AREA)
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- Surface Acoustic Wave Elements And Circuit Networks Thereof (AREA)
Abstract
The embodiment of the application provides a piezoelectric film body and a preparation method thereof, a cavity type device and a preparation method thereof, wherein the piezoelectric film body comprises a substrate layer, an isolation layer and a piezoelectric film layer which are sequentially stacked; the substrate layer comprises a substrate base body with a cavity; the cavity is completely filled with the filling layer; the filling layer is in contact with the isolation layer; the filling layer and the isolation layer are made of the same material, and the filling layer and the isolation layer are made of the same material, so that the filling layer and the isolation layer are corroded by the corrosion solution when the piezoelectric film body is subjected to wet etching treatment, and the substrate base body and the piezoelectric film body are not corroded by the corrosion solution. When the piezoelectric film body is used for preparing a cavity type device, the filling layer in the cavity and the isolation layer corresponding to the cavity can be removed by a wet etching method without damaging the structure of the substrate base body, so that the cavity with the size consistent with that of the preset cavity can be obtained, and the piezoelectric film layer cannot be damaged by the wet etching method.
Description
Technical Field
The application belongs to the field of semiconductor element preparation, and particularly relates to a piezoelectric film body and a preparation method thereof, and a cavity type device and a preparation method thereof.
Background
With the development of technology, the speed of large data transmission between global systems is increasing, and piezoelectric film bulk acoustic wave devices are widely used in more and more ranges, such as timing clocks, mobile phone radio frequency modules, and the like. The piezoelectric film bulk acoustic wave device is a radio frequency filter, and generally adopts an electrode-piezoelectric film-electrode sandwich structure. The top electrode and the bottom electrode are respectively deposited on the upper surface and the lower surface of the piezoelectric film, the piezoelectric film has piezoelectricity, pressure can be generated after voltage is applied, the crystal film is subjected to mechanical deformation, and electric energy is converted into mechanical energy. When such crystals are mechanically compressed or extended, the mechanical energy is converted into electrical energy, forming an electrical charge on both sides of the crystal structure, causing a current to flow through the terminals and/or a voltage between the terminals. Therefore, the quality of the piezoelectric film in the piezoelectric film bulk acoustic wave device directly affects the use effect of the piezoelectric film bulk acoustic wave device.
For the piezoelectric film bulk acoustic wave device, a cavity is correspondingly prepared below the bottom electrode, so that the main body part of the piezoelectric film is suspended on the substrate layer, and energy is limited in the cavity during resonance. The existing method for preparing the cavity comprises the following steps: firstly, a preparation body comprising a substrate layer and a piezoelectric film layer is prepared, then, according to the preset size of a cavity, the cavity is etched in a dry method, such as plasma etching, from the substrate layer to the piezoelectric film layer until the lower surface of the piezoelectric film layer is exposed in the cavity, however, when the cavity is etched by adopting the method, excessive etching is easy to occur to damage the piezoelectric film layer, and the quality of the piezoelectric film layer is influenced.
Disclosure of Invention
The method aims to solve the problem that in the prior art, when a cavity is etched, excessive etching is easy to damage a piezoelectric film layer, so that the quality of the piezoelectric film is influenced.
The present application aims to provide the following aspects:
in a first aspect, an embodiment of the present application provides a piezoelectric thin film body, including a substrate layer, an isolation layer, and a piezoelectric thin film layer, which are sequentially stacked; the substrate layer comprises a substrate base body with a cavity; the cavity is completely filled with a filling layer; the filling layer is in contact with the isolation layer; the filling layer and the isolation layer are made of the same material, and the filling layer and the isolation layer are made of the same material, so that when the piezoelectric film body is subjected to wet etching treatment, an erosion solution erodes the filling layer and the isolation layer, and the erosion solution does not erode the substrate base body and the piezoelectric film layer.
Preferably, the cavity penetrates through the substrate layer, or the bottom of the cavity is the substrate base.
Preferably, the isolation layer is a silicon oxide, nitrogen oxide, aluminum oxide or aluminum nitride material.
Preferably, the substrate base is lithium niobate or silicon material.
Preferably, the piezoelectric thin film layer is made of lithium niobate or lithium tantalate.
In a second aspect, an embodiment of the present application provides a method for manufacturing a piezoelectric thin film body, including:
etching at least one cavity from the etching surface of the substrate layer to the opposite surface of the etching surface according to a preset size to obtain a substrate base body with the cavity;
depositing a filling material on the substrate base body, wherein the filling material completely fills the cavity, a filling layer is formed in the cavity, the filling material covers the etched surface of the filled substrate base body with a preset isolation thickness, and an isolation layer is formed on the etched surface of the filled substrate base body;
preparing a piezoelectric film layer on the isolation layer to obtain a piezoelectric film body;
the filling material can enable an erosion solution to erode the filling layer and the isolation layer when the piezoelectric film body is subjected to wet etching treatment, and the erosion solution does not erode the substrate base body and the piezoelectric film layer.
Preferably, the forming of the isolation layer on the filled substrate base etching surface includes:
depositing a filling material on the substrate base body, wherein the thickness of the filling material covering the etching surface of the filled substrate base body is larger than the preset isolation thickness;
and reducing the thickness of the filling material covering the etched surface of the substrate base body to a preset isolation thickness by using a grinding and polishing method to form an isolation layer, wherein the roughness of the isolation layer is less than 0.5 nm.
Preferably, the piezoelectric thin film layer is formed on the isolation layer by using an ion implantation method and a bonding method, or by using a bonding method and a lapping and polishing method.
In a third aspect, an embodiment of the present application provides a method for manufacturing a cavity type device by using a piezoelectric thin film body, where wet etching processing is performed on the piezoelectric thin film body by using the piezoelectric thin film body, including:
and removing the filling layer and the isolation layer at the position corresponding to the cavity by using an erosion solution, wherein the erosion solution erodes the filling layer and the isolation layer, and the erosion solution does not erode the substrate base body and the piezoelectric thin film layer.
Preferably, if the bottom of the cavity is the substrate base, before the wet etching process is performed on the piezoelectric thin film body, the method further includes: and removing the substrate base body positioned at the bottom of the cavity by a mechanical etching or plasma etching method.
In a fourth aspect, embodiments of the present application provide a piezoelectric film bulk acoustic wave device, including a piezoelectric film bulk with a cavity; the piezoelectric film body with the cavity comprises a substrate layer, an isolation layer and a piezoelectric film layer, and the cavity penetrates through the substrate layer and the isolation layer.
In a fifth aspect, an embodiment of the present application provides a radio frequency module, including the piezoelectric thin film bulk acoustic wave device according to the fourth aspect.
In a sixth aspect, an embodiment of the present application provides a terminal device, including the radio frequency module of the fifth aspect.
According to the piezoelectric film body and the preparation method thereof provided by the embodiment of the application, the cavity is prepared on the substrate layer in advance, then the filling material is adopted to completely fill the cavity to form the filling layer, so that the structure of the filled substrate layer is the same as that of the substrate layer before the cavity is not prepared, and the difference is that the material of the filling layer is different from that of the substrate base body, and the material of the filling layer is the same as that of the isolation layer. Because the substrate base body, the isolation layer and the filling layer are made of different materials, when the piezoelectric film body is used for preparing a cavity type device, the filling layer in the cavity and the isolation layer corresponding to the cavity can be removed by a wet etching method without damaging the structure of the substrate base body, so that the cavity with the same size as the preset cavity can be obtained, and the piezoelectric film layer can not be damaged by the wet etching method.
Drawings
In order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, the drawings used in the description of the embodiments or the prior art will be briefly described below, and it is obvious that the drawings in the following description are some embodiments of the present invention, and those skilled in the art can also obtain other drawings according to the drawings without creative efforts.
Fig. 1 is a schematic structural diagram of a piezoelectric thin film body according to an embodiment of the present disclosure;
fig. 2 is a schematic structural diagram of a piezoelectric thin film body according to a second embodiment of the present disclosure;
fig. 3 is a flowchart of a method for manufacturing a piezoelectric thin film body according to an embodiment of the present disclosure;
fig. 4 is a schematic structural diagram of a cavity-type device according to an embodiment of the present application.
Description of the reference numerals
1-substrate layer, 2-isolation layer, 3-piezoelectric film layer, 11-cavity and 12-substrate base body
Detailed Description
In order to make the technical solutions of the present invention better understood, the technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the drawings in the embodiments of the present invention, and it is obvious that the described embodiments are only a part of the embodiments of the present invention, and not all of the embodiments. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.
As described in the background section, for the piezoelectric film bulk acoustic wave device, a cavity is correspondingly formed below the bottom electrode, so that the main body of the piezoelectric film is suspended on the substrate layer, and energy is confined in the cavity at resonance. However, when the conventional method of etching a cavity in a substrate layer is adopted, the piezoelectric thin film layer is easily damaged by over etching, so that the quality of the piezoelectric thin film is affected. Therefore, in order to solve the above technical problem, an embodiment of the present application provides a piezoelectric thin film body, which may be used to manufacture a cavity-type device, such as a piezoelectric thin film body acoustic wave device.
Example one
Referring to fig. 1, a piezoelectric thin film body provided in an embodiment of the present application, for preparing a cavity device, such as a piezoelectric thin film body acoustic wave device, includes a substrate layer 1, an isolation layer 2, and a piezoelectric thin film layer 3 stacked in sequence; the substrate layer 1 comprises a substrate base 12 with a cavity 11; the cavity 11 penetrates through the etched surface of the substrate base body 12, wherein the etched surface of the substrate base body 12 refers to the surface of the substrate base body 12 adjacent to the isolation layer 2; the substrate base body 12 is arranged at the bottom of the cavity 11, the cavity 11 is completely filled with a filling layer, the filling layer is formed by depositing filling materials, and the filling layer is in contact with the isolation layer 2; wherein the filling layer is made of the same material as the isolation layer 2.
As shown in fig. 1, the substrate layer 1 of the piezoelectric thin film body is composed of a substrate base 12 and a filling layer filled in a cavity 11, wherein the top of the cavity 11 penetrates through an etched surface of the substrate base, the bottom of the cavity 11 does not penetrate through an opposite surface of the etched surface of the substrate base, i.e. the bottom of the cavity 11 is the substrate base, and the cavity 11 in fig. 1 corresponds to a groove-shaped structure with a bottom.
The filling layer is formed by depositing filling materials in the cavity 11, and the structure of the filling layer is the same as that of the cavity 11. The filling layer contacts with isolation layer 2, and wherein, isolation layer 2 can play the effect that supports piezoelectric film layer 3 on the one hand, and on the other hand can play the effect that prevents 3 signal leakage of piezoelectric film layer.
The piezoelectric film body provided by the embodiment of the application is mainly used for preparing a cavity type device, and the quality of the piezoelectric film layer can be ensured in order not to damage the piezoelectric film layer when the cavity of the cavity type device is prepared. The technical idea of the application is that a cavity is prepared on a substrate layer in advance, then the cavity is completely filled with filling materials to form a filling layer, the filled substrate layer is structurally the same as the substrate layer before the cavity is not prepared, and the difference is that the material of the filling layer is different from that of a substrate base body 12, wherein the material of the filling layer is the same as that of the isolation layer 2. The purpose of using different materials for the substrate base 12, the isolation layer 2 and the filling layer is to remove the filling layer in the cavity and the isolation layer 2 corresponding to the cavity by using a wet etching method without damaging the structure of the substrate base 12 when subsequently using the piezoelectric thin film body provided by the embodiment of the present application to prepare a cavity type device, so that a cavity with the same size as the preset cavity can be obtained, and the piezoelectric thin film layer 3 cannot be damaged by using the wet etching method. The wet etching method is to remove a portion to be etched without damaging the piezoelectric thin film layer 3 by using an etching solution which can react with the filling layer and the isolation layer 2 but does not react with the substrate base 12 and the piezoelectric thin film layer 3.
Based on the above analysis, the materials of the filling layer and the isolation layer 2 should be satisfied that, when the piezoelectric thin film body is subjected to wet etching treatment, the erosion solution erodes the filling layer and the isolation layer 2, and the erosion solution does not erode the substrate base 12 and the piezoelectric thin film layer 3.
In the present embodiment, the substrate base 12 may be made of lithium niobate, silicon, or other materials, which are not limited in the present embodiment. The isolation layer 2 is made of the same material as the filling layer, for example, the filling layer and the isolation layer 2 may be made of silicon oxide, nitrogen oxide, aluminum nitride, or the like. In one example, the substrate base 12 is silicon, the filling layer is silicon dioxide, and the isolation layer is silicon dioxide; in another example, the substrate base 12 is formed of lithium niobate, the filler is formed of alumina, and the barrier layer is formed of alumina.
The piezoelectric thin film layer 3 in the embodiment of the present application may be a piezoelectric material such as lithium niobate or lithium tantalate, which is not limited in the embodiment of the present application.
The isolation layer 2 and the filling layer are made of the same material, so that firstly, when the piezoelectric film body is subjected to wet etching treatment, the filling layer and the isolation layer at the position corresponding to the cavity can be removed by adopting an erosion solution, and the treatment process is simple; secondly, in the process of preparing the piezoelectric film body, a filling material can be directly selected, and the filling layer and the isolating layer are prepared by one-step forming, so that the preparation process is simple.
Example two
Referring to fig. 2, a piezoelectric thin film body provided in the second embodiment of the present application is substantially the same as the piezoelectric thin film body provided in the first embodiment, except that the cavity 11 in the second embodiment penetrates through the substrate layer 1.
As shown in fig. 2, the top of the cavity 11 penetrates the etched surface of the substrate base 12, and the bottom of the cavity 11 penetrates the opposite surface of the etched surface of the substrate base 12. The corresponding filling layer penetrates through the substrate layer 1, the top surface of the filling layer is in contact with the isolation layer, and the bottom surface of the filling layer is on the same horizontal plane with the opposite surface of the etched surface of the substrate base body 12.
It should be noted that the number and size of the cavities 11 are not limited in the embodiments of the present application, for example, one or more cavities 11 may be provided; the size of the cavity 11 can be set according to actual requirements, for example, the length of the cavity 11 is 2000 μm, the width is 500 μm, and the depth is 110 μm, and it should be further noted that if the substrate layer includes a plurality of cavities, the sizes of the plurality of cavities may be the same or different.
It should be understood that, based on the first and second embodiments, if the substrate layer 1 includes a plurality of cavities, the plurality of cavities may all be the substrate base 12 at the bottom of the cavities as described in the first embodiment; alternatively, the plurality of cavities may all extend through the substrate layer 1 as described in embodiment two; alternatively, a part of the cavities in the plurality of cavities may be the substrate base 12 at the bottom of the cavity as described in embodiment one, and another part of the cavities may penetrate through the substrate layer 1 as described in embodiment two.
EXAMPLE III
Referring to fig. 3, fig. 3 is a flowchart of a method for manufacturing a piezoelectric thin film body according to an embodiment of the present disclosure. As shown in fig. 3, the preparation method comprises the following steps:
Firstly, preparing a substrate wafer as a substrate layer, for example, using a silicon wafer or a lithium niobate wafer as the substrate layer, then using the bottom surface or the top surface of the substrate layer as an etching surface, and performing full-through etching or semi-penetration etching from the etching surface to the opposite surface of the etching surface, wherein a cavity obtained by the full-through etching penetrates through the whole substrate layer (as shown in fig. 2), a cavity obtained by the semi-penetration etching does not penetrate through the whole substrate layer, and a substrate base body which is not etched is remained at the bottom of the cavity (as shown in fig. 1).
The size of the etched cavity 11 should correspond to the size of the cavity device to be prepared later, and the specific size of the cavity is not limited in the present application. For example: the width of the cavity may be 50 μm to 5mm, the length of the cavity may be 100 μm to 10mm, and the depth of the cavity may be 50 μm to 500 μm. The depth of the cavity refers to the vertical distance of the cavity between the etched side and the opposite side of the etched side. It should be noted that the cross section of the cavity illustrated in fig. 1 and 2 is rectangular, and it should be understood that the cavity is not limited to the shape illustrated in the figures, for example, the cross section of the cavity may be trapezoidal or other shapes.
In one specific example, a silicon wafer substrate having a size of 4 inches, a thickness of 0.5mm, and a smooth surface is prepared, and a plurality of cavities that do not penetrate through the silicon wafer are etched on the silicon wafer substrate using a dry etching method, each cavity having a size of: 500 μm in width, 2000 μm in length and 110 μm in depth. Wherein, the dry etching can be mechanical etching or plasma etching.
In another specific example, a silicon wafer substrate having a size of 4 inches, a thickness of 0.5mm, and a smooth surface is prepared, and a plurality of cavities penetrating the silicon wafer are etched on the silicon wafer substrate by using a dry etching method, wherein each cavity has a size of: a width of 500 μm, a length of 2000 μm, and a depth of 500. mu.m. Wherein, the dry etching can be mechanical etching or plasma etching.
And 2, depositing a filling material on the substrate base body, wherein the filling material completely fills the cavity, a filling layer is formed in the cavity, the filling material covers the filled etched surface of the substrate base body for a preset isolation thickness, and an isolation layer is formed on the filled etched surface of the substrate base body.
The method for obtaining the filling layer and the isolation layer is not limited in the embodiment of the application, and in an implementation mode, the filling layer and the isolation layer can be prepared by one-step process; in another implementation, the filling layer and the isolation layer can also be prepared by different steps, for example, filling the cavity with the filling material, completely filling the cavity, and then depositing the filling material on the filled etched surface of the substrate base to obtain the isolation layer.
And (3) completely filling the cavity 11 etched in the step (1) with a filling material different from the substrate base body 12 material, and forming a filling layer in the cavity 11.
The filler is selected such that the etching solution attacks the filler when the wet etching process is performed on the substrate layer 1, and the etching solution does not attack the substrate base 12.
For example, the substrate base is made of silicon, the filler is silicon dioxide, the etching solution is HF, and when the substrate layer 1 is subjected to wet etching, the HF etches the silicon dioxide but not the silicon, so that the substrate base 12 with the cavity 11 can be obtained after the substrate layer is subjected to wet etching.
The filling material may be deposited in the cavity 11 by sputtering, evaporation or electroplating. For example, if the depth of the cavity 11 is 110 μm, then a filling material with a thickness of 110 μm is correspondingly deposited in the cavity 11, or a filling material with a thickness greater than 110 μm is deposited, so that the cavity 11 is completely filled.
The isolation layer 2 can support the piezoelectric thin film layer 3 on the one hand, and can prevent the piezoelectric thin film layer 3 from signal leakage on the other hand. The isolation layer 2 and the filling layer are made of the same material, for example, the isolation layer 2 and the filling layer are made of silicon oxide, nitrogen oxide, aluminum oxide or aluminum nitride material. The isolation layer 2 can also meet the requirement that when wet etching treatment is carried out on the isolation layer 2, an erosion solution only erodes the isolation layer 2, and the erosion solution does not erode the substrate base 12 and the piezoelectric thin film layer 3.
The isolation layer 2 is made of the same material as the filling layer, so that the filling material can be directly deposited on the etching surface of the filled substrate base body continuously until the filling material is covered on the etching surface of the substrate base body and the isolation thickness is preset to form the isolation layer, and the isolation layer is deposited after the surface of the filling layer in the step 2 is not required to be further processed, so that the preparation process is simpler.
In the piezoelectric film body, certain requirements are made on the smoothness of an interface, and the roughness of the interface is generally required to be less than 0.5nm, so that energy loss caused by scattering of sound waves on the interface can be avoided. Therefore, in order to obtain the isolation layer 2 with low roughness, the thickness of the filling material covering the etched surface of the substrate base 12 after filling may be made larger than the predetermined isolation layer thickness, and then the thickness of the filling material covering the etched surface may be mechanically reduced to the predetermined isolation layer thickness by grinding and polishing, so as to obtain the isolation layer 2 with low surface roughness, for example, the surface roughness of the isolation layer 2 may be reduced to less than 0.5 nm.
And 3, preparing a piezoelectric film layer 3 on the isolation layer 2 to obtain a piezoelectric film body.
The prepared piezoelectric film body comprises a substrate layer 1, an isolation layer 2 and a piezoelectric film layer 3 which are sequentially stacked.
The method of manufacturing the piezoelectric thin film layer is not limited in the present application, and for example, the piezoelectric thin film layer may be manufactured on the spacer layer by using an ion implantation method and a bonding method, or by using a bonding method and a lapping and polishing method.
If the piezoelectric thin film layer is prepared on the top of the isolation layer by using the ion implantation and bonding methods, in the embodiment of the present application, any feasible ion implantation method and any feasible bonding method may be combined to prepare the piezoelectric thin film layer, which is not limited in the present application.
In one implementation, the method for obtaining the piezoelectric thin film layer by ion implantation and bonding comprises the following steps:
step 101, performing ion implantation on a thin film material, and dividing the thin film material into a piezoelectric thin film layer, a separation layer and a residual layer in sequence.
In the embodiment of the present application, the thin film material refers to a base material having a certain thickness and used for obtaining the piezoelectric thin film layer. The thin film material may be a piezoelectric material such as lithium niobate or lithium tantalate, which is not limited in this application.
Ion implantation may be performed from one side of the thin film material toward the inside of the thin film material, thereby forming the piezoelectric thin film layer, the separation layer, and the residual layer on the thin film material.
The ion implantation method in the embodiments of the present application is not particularly limited, and any ion implantation method in the prior art may be used, and the implanted ions may be ions that can generate gas by heat treatment, such as hydrogen ions or helium ions, and the implantation dose may be 3 × 10 when hydrogen ions are implanted16ions/cm2～8×1016ions/cm2The implantation energy may be 120 KeV-400 KeV, and the implantation dosage may be 1 × 10 when implanting helium ions16ions/cm2～1×1017ions/cm2The implantation energy may be 50KeV to 1000KeV, for example, the implantation dose may be 4 × 10 when implanting hydrogen ions16ions/cm2The implantation energy can be 180KeV, and the implantation dosage is 4 × 10 when implanting helium ions16ions/cm2The implantation energy was 200 KeV.
In the embodiment of the application, the thickness of the piezoelectric thin film layer can be adjusted by adjusting the ion implantation depth, and specifically, the larger the ion implantation depth is, the larger the thickness of the prepared piezoelectric thin film layer is; conversely, the smaller the depth of ion implantation, the smaller the thickness of the piezoelectric thin film layer prepared.
And 102, bonding the ion implantation surface of the film material with the isolation layer to obtain a bonded body.
In the embodiment of the present application, the bond is formed after a thin film material is bonded to an isolation layer, wherein the thin film material is not peeled off from the isolation layer, and the ion implantation surface is a surface that is implanted with ions toward the thin film material.
The method for bonding the thin film material and the isolation layer is not particularly limited, and any method for bonding the thin film material and the isolation layer in the prior art can be adopted, for example, the bonding surface of the thin film material is subjected to surface activation, the bonding surface of the isolation layer is also subjected to surface activation, and then the two activated surfaces are bonded to obtain a bonded body.
The method for activating the surface of the bonding surface of the thin film material is not particularly limited, and any method of activating the surface of the thin film material in the prior art, such as plasma activation and chemical solution activation, may be adopted; similarly, the present application does not limit the bonding surface of the isolation layer in any way, and any method that can be used in the prior art for surface activation of the bonding surface of the isolation layer, such as plasma activation, can be used.
And 103, carrying out heat treatment on the bonding body, and separating the residual layer from the piezoelectric film layer to obtain the piezoelectric film body.
In an implementation manner, the bonded body is subjected to heat treatment, the temperature of the heat treatment is 100-600 ℃, bubbles are formed in the separation layer during the heat treatment, for example, H ions form hydrogen, He ions form helium, and the like, the bubbles in the separation layer are connected into one piece as the heat treatment progresses, finally, the separation layer is cracked, the residual layer is separated from the piezoelectric thin film layer, so that the residual layer is stripped from the bonded body, and a piezoelectric thin film layer is formed on the surface of the separation layer.
In the embodiment of the present application, an achievable heat treatment manner is to put the bonding body into a heating device, first raise the temperature to a preset temperature, and then keep the temperature at the preset temperature. Among them, preferably, the heat-preserving conditions include: the holding time may be 1 minute to 48 hours, for example, 3 hours, the holding temperature may be 100 ℃ to 600 ℃, for example, 400 ℃, and the holding atmosphere may be in a vacuum atmosphere or in a protective atmosphere of at least one of nitrogen and an inert gas.
In another implementation, the method for obtaining the piezoelectric thin film layer by a bonding method and a grinding and polishing method comprises the following steps:
firstly, bonding the prepared thin film material and the isolation layer to obtain a bonded body, wherein the manner of bonding the thin film material and the isolation layer can refer to the description of step 102, and is not described herein again. And then, carrying out heat treatment on the bonding body to improve the bonding force between the film material and the isolating layer. For example, the bonding body is placed in a heating device and is subjected to heat preservation at a high temperature, the heat preservation process is performed in a vacuum environment or in a protective atmosphere formed by at least one of nitrogen and inert gas, the heat preservation temperature can be 100 ℃ to 600 ℃, for example, the heat preservation time is 400 ℃, and the heat preservation time can be 1 minute to 48 hours, for example, the heat preservation time is 3 hours. And finally, mechanically grinding and polishing the thin film material on the bonding body, and thinning the thin film material to the preset thickness of the piezoelectric thin film layer. For example, if the thickness of the preset piezoelectric thin film layer is 20 μm, the thin film material on the bonding body may be first thinned to 22 μm by mechanical grinding, and then polished to 20 μm, so as to obtain the piezoelectric thin film layer. The thickness of the piezoelectric film layer can be 400nm-100 μm, and the piezoelectric film layer can be made of lithium niobate or lithium tantalate.
According to the preparation method of the piezoelectric film body, the cavity with the required size is etched on the substrate layer in advance, then the cavity is completely filled with the material which can be removed by a wet etching method, and finally the isolation layer and the piezoelectric film layer are prepared on the completely filled substrate layer at one time, wherein the isolation layer is made of the same material as the filling layer, so that the filling layer and the isolation layer can be obtained through one-time deposition, and the preparation process is simple.
Example four
An embodiment of the present application provides a method for manufacturing a cavity-type device by using the piezoelectric thin film body described in any one of the above embodiments, where the method mainly includes the following steps:
in step 201, if the piezoelectric thin film body is as shown in fig. 1, the cavity 11 does not penetrate through the substrate layer 1, and the bottom of the filling layer is in contact with the substrate base 12, the substrate base 12 at the bottom of the cavity 11 is removed by a dry etching method (for example, a mechanical etching method or a plasma etching method), so that the filling layer can be in contact with an etching solution in step 202 to perform an etching reaction.
Step 202, if the piezoelectric thin film body is as shown in fig. 2, and the cavity penetrates through the substrate layer, or the cavity obtained after step 201 penetrates through the remaining substrate base body, removing the filling layer and the isolation layer at the position corresponding to the cavity by using an etching solution, where the etching solution etches the filling layer and the isolation layer, and the etching solution does not etch the substrate base body and the piezoelectric thin film layer.
The etching solution may react with the filling layer and the isolation layer, but not with the substrate base and the piezoelectric thin film layer. Thus, after the wet etching process, the etching solution removes the filling layer filled in the cavity without damaging the structure of the substrate base, resulting in the cavity-type device with a cavity as shown in fig. 4.
As shown in fig. 4, the cavity type device prepared by using the piezoelectric film body according to any of the above embodiments includes a piezoelectric film body with a cavity; the piezoelectric film body with the cavity comprises a substrate layer, an isolation layer and a piezoelectric film layer, and the cavity penetrates through the substrate layer and the isolation layer. According to the specific application scenario of the cavity-type device, the structure in fig. 4 may be further processed, for example, a bottom electrode is deposited under the exposed piezoelectric thin film layer in the cavity, a top electrode layer is deposited on the piezoelectric thin film layer at a position opposite to the bottom electrode layer, and the piezoelectric thin film acoustic wave device is prepared.
The present application further provides a radio frequency module including the piezoelectric film bulk acoustic wave device described in the above embodiments.
The application also provides a terminal device, and the terminal device comprises the radio frequency module.
Further, in order to avoid the isolating layer to react too fast with the erosion solution, lead to the erosion solution to erode not with the isolating layer of cavity corresponding position, when getting rid of the isolating layer, can choose for use the erosion solution of controlling the reaction rate more easily, get rid of the isolating layer. Of course, it is also possible to select the same etching solution as used for removing the filling layer and then control the reaction speed of the etching solution and the isolation layer by adjusting the reaction conditions.
According to the method for preparing the cavity type device by using the piezoelectric film body, provided by the embodiment of the application, the cavity is prepared by adopting a wet etching method, specifically, the filling layer deposited in the cavity in advance and the isolation layer at the position corresponding to the cavity are corroded by using an erosion solution to obtain the cavity type device, the filling layer can be completely removed by the method to obtain the cavity with the preset size, and the piezoelectric film layer cannot be damaged by excessive etching, so that the quality of the piezoelectric film layer is improved.
The present application has been described in detail with reference to specific embodiments and illustrative examples, but the description is not intended to limit the application. Those skilled in the art will appreciate that various equivalent substitutions, modifications or improvements may be made to the presently disclosed embodiments and implementations thereof without departing from the spirit and scope of the present disclosure, and these fall within the scope of the present disclosure. The protection scope of this application is subject to the appended claims.
Claims (11)
1. A piezoelectric film body is characterized by comprising a substrate layer, an isolation layer and a piezoelectric film layer which are sequentially stacked;
the substrate layer comprises a substrate base body with a cavity;
the cavity is completely filled with a filling layer;
the filling layer is in contact with the isolation layer;
the filling layer and the isolation layer are made of the same material, and the filling layer and the isolation layer are made of the same material, so that when the piezoelectric film body is subjected to wet etching treatment, an erosion solution erodes the filling layer and the isolation layer, and the erosion solution does not erode the substrate base body and the piezoelectric film layer.
2. The piezoelectric film body according to claim 1, wherein the cavity penetrates through the substrate layer, or the bottom of the cavity is the substrate base.
3. The piezoelectric thin film body according to claim 1, wherein the isolation layer is a silicon oxide, nitrogen oxide, aluminum oxide, or aluminum nitride material; the substrate base body is lithium niobate or silicon material; the piezoelectric film layer is made of lithium niobate or lithium tantalate.
4. A method of manufacturing a piezoelectric thin film body, comprising:
etching at least one cavity from the etching surface of the substrate layer to the opposite surface of the etching surface according to a preset size to obtain a substrate base body with the cavity;
depositing a filling material on the substrate base body, wherein the filling material completely fills the cavity, a filling layer is formed in the cavity, the filling material covers the etched surface of the filled substrate base body with a preset isolation thickness, and an isolation layer is formed on the etched surface of the filled substrate base body;
preparing a piezoelectric film layer on the isolation layer to obtain a piezoelectric film body;
the filling material can enable an erosion solution to erode the filling layer and the isolation layer when the piezoelectric film body is subjected to wet etching treatment, and the erosion solution does not erode the substrate base body and the piezoelectric film layer.
5. The method according to claim 4, wherein the step of forming an isolation layer on the filled substrate base etching surface comprises:
depositing a filling material on the substrate base body, wherein the thickness of the filling material covering the etching surface of the filled substrate base body is larger than the preset isolation thickness;
and reducing the thickness of the filling material covering the etched surface of the substrate base body to a preset isolation thickness by using a grinding and polishing method to form an isolation layer, wherein the roughness of the isolation layer is less than 0.5 nm.
6. The production method according to claim 4, wherein a piezoelectric thin film layer is produced on the separation layer by an ion implantation method and a bonding method, or by a bonding method and a lapping and polishing method.
7. A method for preparing a cavity-type device by using a piezoelectric film body, wherein the piezoelectric film body is subjected to wet etching treatment by using the piezoelectric film body as claimed in any one of claims 1 to 3, and the method comprises the following steps:
and removing the filling layer and the isolation layer at the position corresponding to the cavity by using an erosion solution, wherein the erosion solution erodes the filling layer and the isolation layer, and the erosion solution does not erode the substrate base body and the piezoelectric thin film layer.
8. The method according to claim 7, wherein if the bottom of the cavity is the substrate base, before performing the wet etching process on the piezoelectric thin film body, the method further comprises:
and removing the substrate base body positioned at the bottom of the cavity by a mechanical etching or plasma etching method.
9. A piezoelectric film bulk acoustic wave device comprising a piezoelectric film body having a cavity;
the piezoelectric film body with the cavity comprises a substrate layer, an isolation layer and a piezoelectric film layer, and the cavity penetrates through the substrate layer and the isolation layer.
10. A radio frequency module comprising the piezoelectric thin film bulk acoustic wave device of claim 9.
11. A terminal device characterized by comprising the radio frequency module of claim 10.
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