CN111755572A - 红外探测器读出电路铟凸点制备方法及制得的读出电路 - Google Patents
红外探测器读出电路铟凸点制备方法及制得的读出电路 Download PDFInfo
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Abstract
本发明公开了一种红外探测器读出电路铟凸点制备方法及制得的红外探测器读出电路,本发明通过在读出电路上涂覆光刻胶,并在读出电路的预设位置制备铟凸点,再去除光刻胶上的铟层,然后在铟凸点上重复镀铟、去除光刻胶上的铟层,直到得到预设高度的铟凸点,从而有效解决了现有技术中对小间距红外探测器铟凸点的制备高度不能满足要求的问题。
Description
技术领域
本发明涉及计算机技术领域,特别是涉及一种红外探测器读出电路铟凸点制备方法及制得的红外探测器读出电路。
背景技术
碲镉汞是一种重要的红外探测器件材料,经过几十年的发展,芯片结构已由单元、多元发展至一维线列和二维面阵焦平面阵列,对短波,中波,长波,甚长波红外焦平面探测器的研究已转入应用阶段,各种规格的碲镉汞红外焦平面探测器已大量应用于各行各业。
目前,小间距红外探测器已成为红外探测器技术发展的重要方向,小间距红外探测器读出电路铟凸点制备工艺中,凸点高度是衡量工艺效果的一个重要参数,但是现有技术对小间距红外探测器铟凸点的制备高度并不能满足实际需要。
发明内容
本发明提供了一种红外探测器读出电路铟凸点制备方法及制得的红外探测器读出电路,以解决现有技术中对小间距(小于等于10微米)红外探测器铟凸点的制备高度不能满足要求的问题。
第一方面,本发明提供了一种红外探测器读出电路铟凸点制备方法,包括:
步骤一、对读出电路上涂覆光刻胶;
步骤二、按照预设需求在所述读出电路的预设位置制备铟凸点,并去除光刻胶上的铟层;
步骤三、在所述铟凸点上进行二次铟凸点制备,并去除光刻胶上的铟层;
重复执行步骤二和步骤三,直到得到预设高度的铟凸点;
其中,所述铟凸点之间的间距小于10微米。
可选地,所述读出电路的芯片涂覆的光刻胶为负胶。
可选地,所述读出电路的芯片的光刻孔深宽比大于2:1。
可选地,制备铟凸点,包括:通过热蒸发镀膜制备所述铟凸点。
可选地,铟凸点的生长速率为10-30埃/秒,膜厚为3±0.2微米。
可选地,去除光刻胶上的铟层,包括:通过离子束刻蚀去除光刻胶上的铟层。
可选地,通过离子束刻蚀去除光刻胶上的铟层的刻蚀束压为250-300V,束流为50-60mA,刻蚀角度为40-60度,刻蚀时间为80-100分钟。
可选地,得到预设高度的铟凸点之后,该方法还包括:通过剥离工艺去除光刻胶。
可选地,所述铟凸点的高度为4-8微米。
第二方面,本发明还提供了一种红外探测器读出电路,所述红外探测器读出电路为通过上述任一种所述的红外探测器读出电路铟凸点制备方法制备得到。
本发明有益效果如下:
本发明通过在读出电路上涂覆光刻胶,并在读出电路的预设位置制备铟凸点,再去除光刻胶上的铟层,然后在铟凸点上重复镀铟、去除光刻胶上的铟层,直到得到预设高度的铟凸点,从而有效解决了现有技术中对小间距红外探测器铟凸点的制备高度不能满足要求的问题。
附图说明
图1a是传统光刻铟柱孔的示意图;
图1b是传统光刻铟柱生长的示意图;
图1c是传统剥离后的铟柱的示意图;
图2是扫描电子显微镜的实物图;
图3a是本发明实施例光刻铟柱孔的示意图;
图3b是本发明实施例铟柱生长的示意图;
图3c是本发明实施例离子束刻蚀的示意图;
图3d是本发明实施例二次铟柱生长的示意图;
图3e是本发明实施例二次离子束刻蚀的示意图;
图3f是本发明实施例剥离后的铟柱的示意图。
具体实施方式
本发明实施例针对对小间距红外探测器铟凸点的制备高度不能满足要求的问题,通过在读出电路上涂覆光刻胶,并在读出电路的预设位置制备铟凸点,再去除光刻胶上的铟层,然后在铟凸点上重复镀铟、去除光刻胶上的铟层,直到得到预设高度的铟凸点。以下结合附图以及实施例,对本发明进行进一步详细说明。应当理解,此处所描述的具体实施例仅仅用以解释本发明,并不限定本发明。
小间距红外探测器读出电路铟凸点制备工艺中,凸点高度是衡量工艺效果的一个重要参数,红外探测器芯片和读出电路芯片间的铟凸点总高度将直接影响后续倒装互连工艺的互连导通效果,进而对红外器件的盲元数目产生影响。就本发明的小间距红外探测器读出电路铟凸点制备工艺而言,尤其需要解决在极小的光刻孔下保证最终铟凸点高度的问题。
为了解决小间距红外探测器铟凸点制备高度的问题,本发明提供了一种专门用于小间距红外探测器读出电路铟凸点制备的工艺方法,具体为先进行热蒸发镀膜工艺制备铟凸点,在不进行后续剥离工艺的情况下使用离子束刻蚀工艺进行刻蚀,待光刻胶上的铟层经刻蚀去除后,再进行热蒸发镀膜工艺制备铟凸点,如此经过多次热蒸发和刻蚀最终制备出满足后续工艺需求的铟凸点。
本专利主要是用于小间距红外探测器读出电路铟凸点制备工艺中,由于光刻孔极小,并且光刻胶深宽比达到2:1(或更大),传统的热增发+剥离工艺(工艺流程如图1a至图1c所示)并不能制备出足够高度的铟凸点,不能满足后续倒装互连工艺的需求。以像元中心间距为10μm的红外器件为例,用传统热蒸发工艺生长铟柱,在生长的过程中随着时间增加光刻孔会被逐渐堵住,如图2所示,经过后续剥离后铟凸点高度不能达到生长高度并且极其不均匀,这种情况将严重影响后续探测器芯片和读出电路芯片的倒装互连工艺,难以保证两芯片良好的混成互连耦合效果。
本发明第一实施例提供了一种红外探测器读出电路铟凸点制备方法,参见图3a至图3f,该方法包括:
S101、对读出电路上涂覆光刻胶;
具体地,所述读出电路的芯片涂覆的光刻胶为负胶,且所述读出电路的芯片的光刻孔深宽比大于2:1,同时在读出电路上刻蚀出孔,即设置铟柱用的孔。
S102、按照预设需求在所述读出电路的预设位置制备铟凸点,并去除光刻胶上的铟层;
具体实施时,本发明实施例是通过热蒸发镀膜制备所述铟凸点。
其中,铟凸点的生长速率为10-30埃/秒,膜厚为3±0.2微米。
具体地,本发明实施例是通过离子束刻蚀去除光刻胶上的铟层,且铟层的刻蚀束压为250-300V,束流为50-60mA,刻蚀角度为40-60度,刻蚀时间为80-100分钟。
S103、进行二次镀铟,并去除光刻胶上的铟层;
S104、重复步骤S102和S103,直到得到预设高度的铟凸点。
其中,本发明实施例所针对的读出电路的铟凸点之间的间距小于10微米。
最后本发明实施例还需要通过剥离工艺去除光刻胶。
实验测得,通过本发明实施例所述的方法,制备得到的铟凸点的高度可以为4-8微米。
也就是说,本发明实施例通过在读出电路上涂覆光刻胶,并在读出电路的预设位置制备铟凸点,再去除光刻胶上的铟层,然后在铟凸点上重复镀铟、去除光刻胶上的铟层,直到得到预设高度的铟凸点,从而有效解决了现有技术中对小间距红外探测器铟凸点的制备高度不能满足要求的问题。
总体来说,本发明实施例是在铟凸点生长前采用厚胶光刻工艺(负胶),光刻孔深宽比达到2:1(或更大);首先进行热蒸发镀膜工艺制备铟凸点,然后使用离子束刻蚀工艺进行刻蚀,去除光刻胶上的铟层;之后再进行热蒸发镀膜工艺制备第二次铟凸点,然后再次使用离子束刻蚀工艺进行刻蚀,去除光刻胶上的铟层;经过N次(N≥2)热蒸发和刻蚀循环工艺后,得到满足工艺需求高度的铟凸点;最终进行剥离工艺去除光刻胶,完成整套制备工艺。
在小间距红外探测器铟凸点制备工艺中,进行读出电路端铟凸点制备,采用厚胶光刻工艺+热蒸发和刻蚀循环工艺+剥离工艺的方式,有效地避免了铟膜生长过程中随着时间增加逐渐堵住光刻孔所造成的最终铟凸点高度和均匀性差的影响;并且由于读出电路芯片端铟凸点高度和均匀性可控,后续可以直接进行混成互连工艺,不用再进行探测器芯片端的铟凸点制备,简化了整体工艺流程,对小间距红外器件铟凸点制备工艺方法有较大贡献。
为了更好的对本发明所述的方法进行更好的说明,下面将通过一个具体的例子来对本发明所述的方法进行解释:
以像元间距10微米的红外探测器读出电路端铟凸点制备工艺为例:
1.在读出电路端进行厚胶光刻,使用AZ9260光刻胶,光刻胶涂覆厚度为10-20微米,光刻孔大小控制为Φ3-Φ7微米;
2.使用热蒸发镀膜机进行铟柱生长,条件为速率10-30埃/秒,膜厚3±0.2微米;
3.使用离子束刻蚀机对读出电路芯片进行刻蚀,条件为刻蚀束压250-300V,束流50-60mA,刻蚀角度40-60度,刻蚀时间80-100分钟;
4.重复步骤2和3,共两次;
5.进行剥离去胶工艺;
6.得到高度为8±0.3微米的铟凸点。
本发明第二实施例提供了一种红外探测器读出电路,其特征在于,所述红外探测器读出电路为通过上述所述的红外探测器读出电路铟凸点制备方法制备得到。
本发明实施例的相关内容可参见本发明第一实施例进行理解,在此不做详细论述。
尽管为示例目的,已经公开了本发明的优选实施例,本领域的技术人员将意识到各种改进、增加和取代也是可能的,因此,本发明的范围应当不限于上述实施例。
Claims (10)
1.一种红外探测器读出电路铟凸点制备方法,其特征在于,包括:
步骤一、对读出电路上涂覆光刻胶;
步骤二、按照预设需求在所述读出电路的预设位置制备铟凸点,并去除光刻胶上的铟层;
步骤三、进行二次镀铟,并去除光刻胶上的铟层;
重复执行步骤二和步骤三,直到得到预设高度的铟凸点;
其中,所述铟凸点之间的间距小于10微米。
2.根据权利要求1所述的方法,其特征在于,
所述读出电路的芯片涂覆的光刻胶为负胶。
3.根据权利要求1所述的方法,其特征在于,
所述读出电路的芯片的光刻孔深宽比大于2:1。
4.根据权利要求1所述的方法,其特征在于,制备铟凸点,包括:
通过热蒸发镀膜制备所述铟凸点。
5.根据权利要求4所述的方法,其特征在于,
铟凸点的生长速率为10-30埃/秒,膜厚为3±0.2微米。
6.根据权利要求1-5中任意一项所述的方法,其特征在于,去除光刻胶上的铟层,包括:
通过离子束刻蚀去除光刻胶上的铟层。
7.根据权利要求6所述的方法,其特征在于,
通过离子束刻蚀去除光刻胶上的铟层的刻蚀束压为250-300V,束流为50-60mA,刻蚀角度为40-60度,刻蚀时间为80-100分钟。
8.根据权利要求1-5中任意一项所述的方法,其特征在于,得到预设高度的铟凸点之后,该方法还包括:
通过剥离工艺去除光刻胶。
9.根据权利要求1-5中任意一项所述的方法,其特征在于,
所述铟凸点的高度为4-8微米。
10.一种红外探测器读出电路,其特征在于,所述红外探测器读出电路为通过权利要求1-9中任意一项所述的红外探测器读出电路铟凸点制备方法制备得到。
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