CN111755487A - Novel AMOLED display structure and preparation method thereof - Google Patents
Novel AMOLED display structure and preparation method thereof Download PDFInfo
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- 239000004065 semiconductor Substances 0.000 claims description 19
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/40—OLEDs integrated with touch screens
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- G—PHYSICS
- G06—COMPUTING; CALCULATING OR COUNTING
- G06F—ELECTRIC DIGITAL DATA PROCESSING
- G06F3/00—Input arrangements for transferring data to be processed into a form capable of being handled by the computer; Output arrangements for transferring data from processing unit to output unit, e.g. interface arrangements
- G06F3/01—Input arrangements or combined input and output arrangements for interaction between user and computer
- G06F3/03—Arrangements for converting the position or the displacement of a member into a coded form
- G06F3/041—Digitisers, e.g. for touch screens or touch pads, characterised by the transducing means
- G06F3/0412—Digitisers structurally integrated in a display
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- G—PHYSICS
- G06—COMPUTING; CALCULATING OR COUNTING
- G06F—ELECTRIC DIGITAL DATA PROCESSING
- G06F3/00—Input arrangements for transferring data to be processed into a form capable of being handled by the computer; Output arrangements for transferring data from processing unit to output unit, e.g. interface arrangements
- G06F3/01—Input arrangements or combined input and output arrangements for interaction between user and computer
- G06F3/03—Arrangements for converting the position or the displacement of a member into a coded form
- G06F3/041—Digitisers, e.g. for touch screens or touch pads, characterised by the transducing means
- G06F3/044—Digitisers, e.g. for touch screens or touch pads, characterised by the transducing means by capacitive means
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/12—Active-matrix OLED [AMOLED] displays
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- H—ELECTRICITY
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- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/12—Active-matrix OLED [AMOLED] displays
- H10K59/1201—Manufacture or treatment
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- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/12—Active-matrix OLED [AMOLED] displays
- H10K59/131—Interconnections, e.g. wiring lines or terminals
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- G—PHYSICS
- G06—COMPUTING; CALCULATING OR COUNTING
- G06F—ELECTRIC DIGITAL DATA PROCESSING
- G06F2203/00—Indexing scheme relating to G06F3/00 - G06F3/048
- G06F2203/041—Indexing scheme relating to G06F3/041 - G06F3/045
- G06F2203/04103—Manufacturing, i.e. details related to manufacturing processes specially suited for touch sensitive devices
Abstract
The invention relates to the technical field of microelectronics, in particular to a novel AMOLED display structure and a preparation method thereof, wherein the AMOLED display structure comprises a capacitor area structure, and the capacitor area structure comprises a glass layer, a first metal layer, a first insulating layer, a second metal layer, a third insulating layer, a flat layer, a third metal layer, a pixel defining layer and a cathode metal layer; the first via hole is formed in the pixel defining layer of the capacitor area structure, the cathode metal layer is filled in the first via hole, and the first via hole is formed in the pixel defining layer, so that the cathode square and the cathode wiring can be lapped, the cathode wiring is assigned to a negative electrode (namely VSS) potential of a power supply in a part of time within one frame time, image display is achieved, the cathode wiring is assigned to a touch detection signal in department time, self-capacitance touch sensing is achieved, and further embedded type AMOLED touch display technology is achieved.
Description
Technical Field
The invention relates to the technical field of microelectronics, in particular to a novel AMOLED display structure and a preparation method thereof.
Background
At present, the screen does not simply transmit the consultation of the picture, the video and the like for the user, and scientific research personnel continuously endow the display screen with new additional functions, such as an embedded touch display technology. In the display technology of the conventional liquid crystal display, the integrated touch function has been widely applied to the middle and small-sized panels, and the technology of embedding the touch recognition function in the Active-matrix organic Light Emitting Diode (AMOLED) display technology is still in the development stage. The conventional AMOLED display screen is generally matched with an externally hung touch display screen, and a touch unit is arranged outside the AMOLED display screen, so that the AMOLED display screen is not light and thin. Therefore, there is a need to provide a novel AMOLED display structure and a method for fabricating the same, which can implement an in-cell touch AMOLED display technology, and further implement a light and thin AMOLED display screen.
Disclosure of Invention
The technical problem to be solved by the invention is as follows: a novel AMOLED display structure and a method for manufacturing the same are provided.
In order to solve the above technical problems, a first technical solution adopted by the present invention is:
a novel AMOLED display structure comprises a capacitance area structure;
the capacitor area structure comprises a glass layer, a first metal layer, a first insulating layer, a second metal layer, a third insulating layer, a flat layer, a third metal layer, a pixel defining layer and a cathode metal layer, wherein the first metal layer, the first insulating layer, the second metal layer, the third insulating layer, the flat layer, the third metal layer, the pixel defining layer and the cathode metal layer are sequentially arranged on the surface of the glass layer, a first through hole is formed in the pixel defining layer, the cathode metal layer is filled in the first through hole, and the cathode metal layer in the first through hole is in contact with one side face, far away from the glass layer, of the third metal layer.
The second technical scheme adopted by the invention is as follows:
a preparation method of a novel AMOLED display structure comprises the following steps:
s1, providing a glass layer of a capacitance area structure, and covering a first metal layer on the surface of the glass layer;
s2, forming a first insulating layer covering the surface of the first metal layer;
s3, forming a second insulating layer covering the surface of the first insulating layer;
s4, forming a second metal layer covering the surface of the second insulating layer;
s5, forming a third insulating layer covering the surface of the second metal layer;
s6, forming a flat layer and covering the surface of the third insulating layer;
s7, forming a third metal layer covering the surface of the flat layer;
s8, forming a pixel defining layer covering the surface of the third metal layer and contacting with the flat layer;
s9, forming a first via hole in the pixel defining layer, forming a cathode metal layer in the first via hole, and contacting the cathode metal layer with a side of the third metal layer away from the glass layer.
The invention has the beneficial effects that:
the first via hole is formed in the pixel defining layer of the capacitor area structure, the cathode metal layer is filled in the first via hole, and the first via hole is formed in the pixel defining layer, so that the cathode square and the cathode wiring can be lapped, the cathode wiring is assigned to a negative electrode (namely VSS) potential of a power supply in a part of time within one frame time, image display is realized, the cathode wiring is assigned to a touch detection signal in a department time, self-capacitance touch sensing is realized, an embedded touch AMOLED display technology is further realized, and the touch unit is arranged outside the AMOLED in the prior art; the capacitor area structure designed by the scheme reduces the manufacturing cost of the display module by reducing yellow light, etching and stripping the direct evaporation of the manufacturing process to complete the pattern arrangement, and simultaneously enables the AMOLED to be light and thin, so that the manufacturing cost is reduced, the product benefit is improved, and the trend of light and thin of a small-size display panel in the current market is met.
Drawings
FIG. 1 is a schematic structural diagram of a novel AMOLED display structure according to the present invention;
FIG. 2 is a flow chart illustrating the steps of a method for fabricating a novel AMOLED display structure according to the present invention;
FIG. 3 is a schematic circuit diagram of a novel AMOLED display structure according to the present invention;
description of reference numerals:
1. a glass layer; 2. a first metal layer; 3. a first insulating layer; 4. a second insulating layer; 5. a second metal layer; 6. a third insulating layer; 7. a planarization layer; 8. a third metal layer; 9. a pixel defining layer; 10. an organic light emitting material; 11. a cathode metal layer; 12. a capacitive area structure; 13. TFT2 area structure; 14. TFT1 area structure; c1, a first capacitance; t1, a first thin film field effect transistor; t2, a second thin film field effect transistor; data and signal routing; VDD, power supply voltage routing; gate, Gate scanning routing; AN, cathode routing.
Detailed Description
In order to explain technical contents, achieved objects, and effects of the present invention in detail, the following description is made with reference to the accompanying drawings in combination with the embodiments.
The most key concept of the invention is as follows: the embedded touch AMOLED display technology is realized by arranging a first via hole on a pixel defining layer of a capacitive area structure of the AMOLED and filling a cathode metal layer in the first via hole.
Referring to fig. 1, a technical solution provided by the present invention:
a novel AMOLED display structure comprises a capacitance area structure;
the capacitor area structure comprises a glass layer, a first metal layer, a first insulating layer, a second metal layer, a third insulating layer, a flat layer, a third metal layer, a pixel defining layer and a cathode metal layer, wherein the first metal layer, the first insulating layer, the second metal layer, the third insulating layer, the flat layer, the third metal layer, the pixel defining layer and the cathode metal layer are sequentially arranged on the surface of the glass layer, a first through hole is formed in the pixel defining layer, the cathode metal layer is filled in the first through hole, and the cathode metal layer in the first through hole is in contact with one side face, far away from the glass layer, of the third metal layer.
From the above description, the beneficial effects of the present invention are:
the first via hole is formed in the pixel defining layer of the capacitor area structure, the cathode metal layer is filled in the first via hole, and the first via hole is formed in the pixel defining layer, so that the cathode square and the cathode wiring can be lapped, the cathode wiring is assigned to a negative electrode (namely VSS) potential of a power supply in a part of time within one frame time, image display is realized, the cathode wiring is assigned to a touch detection signal in a department time, self-capacitance touch sensing is realized, an embedded touch AMOLED display technology is further realized, and the touch unit is arranged outside the AMOLED in the prior art; the capacitor area structure designed by the scheme reduces the manufacturing cost of the display module by reducing yellow light, etching and stripping the direct evaporation of the manufacturing process to complete the pattern arrangement, and simultaneously enables the AMOLED to be light and thin, so that the manufacturing cost is reduced, the product benefit is improved, and the trend of light and thin of a small-size display panel in the current market is met.
Further, the structure comprises a TFT1 area structure, the TFT1 area structure comprises a glass layer, a first metal layer, a first insulating layer, a semiconductor layer, a second insulating layer, a second metal layer, a third insulating layer, a flat layer, a third metal layer, a pixel defining layer and a cathode metal layer, the first insulating layer, the semiconductor layer, the second insulating layer, the second metal layer, the third insulating layer, the flat layer, the third metal layer, the pixel defining layer and the cathode metal layer of the TFT1 area structure are sequentially arranged on the surface of the glass layer of the TFT1 area structure, the second insulating layer of the TFT1 area structure is provided with two second via holes, the second metal layer of the TFT1 area structure is respectively filled in the two second via holes, the second metal layer of the TFT1 area structure is in contact with a side surface of the semiconductor layer of the TFT1 area structure far away from the glass layer of the TFT1 area structure, and a third via hole is arranged on the pixel defining layer of the TFT1 area structure, and an organic light-emitting material is filled in the third via hole.
As can be seen from the above description, the gate scan trace is formed by disposing the first metal layer, the signal trace is formed by disposing the second metal layer, and the cathode trace is formed by disposing the third metal layer in the TFT1 region.
Further, the TFT2 region structure further includes a TFT2 region structure, where the TFT2 region structure includes a glass layer, a first metal layer, a first insulating layer, a semiconductor layer, a second insulating layer, a second metal layer, a third insulating layer, a planarization layer, a third metal layer, a pixel defining layer, and a cathode metal layer, and the first metal layer, the first insulating layer, the semiconductor layer, the second insulating layer, the second metal layer, the third insulating layer, the planarization layer, the third metal layer, the pixel defining layer, and the cathode metal layer of the TFT2 region structure are sequentially disposed on the surface of the glass layer of the TFT2 region structure;
be equipped with two fourth via holes on the second insulating layer of TFT2 regional structure, the first insulating layer and the second insulating layer of TFT2 regional structure correspond respectively the position of the first metal layer of TFT2 regional structure is equipped with a sub-node via hole, two the sub-node via hole sets up relatively and communicates, the second metal layer of TFT2 regional structure fill respectively in fourth via hole and sub-node via hole, the second metal layer of filling in the fourth via hole with a side contact of TFT2 regional structure's second metal layer keep away from the glass layer of TFT2 regional structure, the second metal layer of filling in the sub-node via hole with a side contact of TFT2 regional structure's semiconductor layer keeps away from the glass layer of TFT2 regional structure.
Further, the cathode metal layer is a semitransparent metal layer.
As can be seen from the above description, the cathode metal layer is a semitransparent metal layer, which is beneficial to embedding a self-contained touch function in the AMOLED display screen, thereby achieving the effect of thinning the panel.
Further, the thickness of the cathode metal layer is 0.01-0.3 μm.
As can be seen from the above description, setting the thickness of the cathode metal layer to be 0.01 μm to 0.3 μm can improve the capacitance, which is beneficial to implementing the AMOLED display technology with higher resolution.
Furthermore, the cathode metal layer is U-shaped.
According to the description, the cathode metal layer is U-shaped, so that the embedded touch AMOLED display technology is favorably realized.
Referring to fig. 2, another technical solution provided by the present invention:
a preparation method of a novel AMOLED display structure comprises the following steps:
s1, providing a glass layer of a capacitance area structure, and covering a first metal layer on the surface of the glass layer;
s2, forming a first insulating layer covering the surface of the first metal layer;
s3, forming a second insulating layer covering the surface of the first insulating layer;
s4, forming a second metal layer covering the surface of the second insulating layer;
s5, forming a third insulating layer covering the surface of the second metal layer;
s6, forming a flat layer and covering the surface of the third insulating layer;
s7, forming a third metal layer covering the surface of the flat layer;
s8, forming a pixel defining layer covering the surface of the third metal layer and contacting with the flat layer;
s9, forming a first via hole in the pixel defining layer, forming a cathode metal layer in the first via hole, and contacting the cathode metal layer with a side of the third metal layer away from the glass layer.
From the above description, the beneficial effects of the present invention are: the first via hole is formed in the pixel defining layer of the capacitor area structure, the cathode metal layer is filled in the first via hole, and the first via hole is formed in the pixel defining layer, so that the cathode square and the cathode wiring can be lapped, the cathode wiring is assigned to a negative electrode (namely VSS) potential of a power supply in a part of time within one frame time, image display is realized, the cathode wiring is assigned to a touch detection signal in a department time, self-capacitance touch sensing is realized, an embedded touch AMOLED display technology is further realized, and the touch unit is arranged outside the AMOLED in the prior art; the capacitor area structure designed by the scheme reduces the manufacturing cost of the display module by reducing yellow light, etching and stripping the direct evaporation of the manufacturing process to complete the pattern arrangement, and simultaneously enables the AMOLED to be light and thin, so that the manufacturing cost is reduced, the product benefit is improved, and the trend of light and thin of a small-size display panel in the current market is met.
Further, the cathode metal layer is a semitransparent metal layer.
As can be seen from the above description, the cathode metal layer is a semitransparent metal layer, which is beneficial to embedding a self-contained touch function in the AMOLED display screen, so as to achieve the effect of thinning the panel.
Further, the thickness of the cathode metal layer is 0.01-0.3 μm.
As can be seen from the above description, setting the thickness of the cathode metal layer to 0.01 μm-0.3 μm can improve the capacitance, which is beneficial for implementing higher resolution AMOLED display technology.
Furthermore, the cathode metal layer is U-shaped.
As can be seen from the above description, the cathode metal layer is U-shaped, which is beneficial to implementing the embedded touch AMOLED display technology.
Referring to fig. 1 and fig. 3, a first embodiment of the present invention is:
a novel AMOLED display structure comprising a capacitive area structure 12;
the capacitor area structure 12 comprises a glass layer 1, a first metal layer 2, a first insulating layer 3, a second insulating layer 4, a second metal layer 5, a third insulating layer 6, a flat layer 7, a third metal layer 8, a pixel defining layer 9 and a cathode metal layer 11, wherein the first metal layer 2, the first insulating layer 3, the second insulating layer 4, the second metal layer 5, the third insulating layer 6, the flat layer 7, the third metal layer 8, the pixel defining layer 9 and the cathode metal layer 11 are sequentially arranged on the surface of the glass layer 1, the pixel defining layer 9 is provided with a first pixel through hole, the cathode metal layer 11 is filled in the first through hole, the cathode metal layer 11 in the first through hole is in contact with one side surface of the third metal layer 8 away from the glass layer 1, the cathode metal layer 11 is a semitransparent metal layer, the thickness of the cathode metal layer 11 is 0.01 μm-0.3 μm, preferably 0.25 μm, and the cathode metal layer 11 is U-shaped.
The capacitor spacing of the capacitor region structure 12 is the thickness of the first insulating layer 3 and the second insulating layer 4.
The novel AMOLED display structure further comprises a TFT1 area structure 14, wherein the TFT1 area structure 14 comprises a glass layer, a first metal layer, a first insulating layer, a semiconductor layer, a second insulating layer, a second metal layer, a third insulating layer, a flat layer, a third metal layer, a pixel defining layer and a cathode metal layer, the first insulating layer, the semiconductor layer, the second insulating layer, the second metal layer, the third insulating layer, the flat layer, the third metal layer, the pixel defining layer and the cathode metal layer of the TFT1 area structure 14 are sequentially arranged on the surface of the glass layer of the TFT1 area structure 14, two second through holes are arranged on the second insulating layer of the TFT1 area structure 14, the second metal layer of the TFT1 area structure 14 is respectively filled in the two second through holes, the second metal layer of the TFT1 area structure 14 is in contact with one side surface of the semiconductor layer of the TFT1 area structure 14, which is far away from the glass layer of the TFT1 area structure 14, a third via hole is formed in the pixel defining layer of the TFT1 area structure 14, and the third via hole is filled with the organic light emitting material 10.
The novel AMOLED display structure further comprises a TFT2 area structure 13, wherein the TFT2 area structure 13 comprises a glass layer, a first metal layer, a first insulating layer, a semiconductor layer, a second insulating layer, a second metal layer, a third insulating layer, a flat layer, a third metal layer, a pixel defining layer and a cathode metal layer, and the first metal layer, the first insulating layer, the semiconductor layer, the second insulating layer, the second metal layer, the third insulating layer, the flat layer, the third metal layer, the pixel defining layer and the cathode metal layer of the TFT2 area structure 13 are sequentially arranged on the surface of the glass layer of the TFT2 area structure 13;
be equipped with two fourth via holes on the second insulating layer of TFT2 regional structure 13, the first insulating layer and the second insulating layer of TFT2 regional structure 13 correspond respectively the position of the first metal layer of TFT2 regional structure 13 is equipped with a sub-node via hole, two the sub-node via hole sets up relatively and communicates, the second metal layer of TFT2 regional structure 13 fill respectively in fourth via hole and sub-node via hole, the second metal layer of filling in the fourth via hole with a side contact of TFT2 regional structure 13's glass layer is kept away from to the second metal layer of TFT2 regional structure 13, the second metal layer of filling in the sub-node via hole with a side contact of TFT2 regional structure 13's semiconductor layer keeps away from the glass layer of TFT2 regional structure 13.
The oxide medium of the semiconductor layer 4 is IGZO.
When 11 coating by vaporization in negative pole metal level, utilize the mask plate direct definition to go out negative pole square figure, the negative pole mask plate is provided with the fretwork region and shelters from the region: during vapor deposition, vapor deposition materials above the hollow area can penetrate through the mask plate to reach the surface of the substrate to form a metal pattern; the evaporation material cannot reach the surface of the substrate in the shielding area due to the shielding effect of the mask plate, and the projection area of the substrate below the shielding area has no cathode metal layer; and forming a cathode square electrode by arranging the hollow area and the shielding area of the mask plate.
The circuit structure of the AMOLED display structure comprises more than two square units with the same circuit structure, wherein each square unit comprises a Gate scanning wiring Gate, a signal wiring Data, a cathode wiring AN, a power voltage wiring VDD and a compensation circuit, the signal wiring Data and the power voltage wiring VDD are parallel to each other, the cathode wiring AN and the signal wiring Data are parallel to each other, and the Gate scanning wiring Gate and the signal wiring Data are perpendicular to each other;
the compensation circuit comprises a first capacitor C1, a first thin film field effect transistor T1 and a second thin film field effect transistor T2;
one end of the first capacitor C1 is electrically connected with the power voltage trace VDD and the drain of the second thin film transistor T2, the other end of the first capacitor C1 is electrically connected with the drain of the first thin film transistor T1 and the Gate of the second thin film transistor T2, the source of the first thin film transistor T1 is electrically connected with the signal trace Data, the Gate of the first thin film transistor T1 is electrically connected with the Gate scanning trace Gate, and the source of the second thin film transistor T2 is electrically connected with the negative electrode potential of the power supply.
The compensation circuit corresponds to AN AMOLED display structure, the first metal layer of the TFT1 area structure 14 corresponds to a Gate scanning trace Gate of the compensation circuit, the second metal layer of the TFT1 area structure 14 corresponds to a signal trace Data of the compensation circuit, the second metal layer 5 of the capacitance area structure 12 corresponds to a power voltage trace VDD of the compensation circuit, and the third metal layer 8 of the capacitance area structure 12 corresponds to a cathode trace AN of the compensation circuit.
Referring to fig. 2, the second embodiment of the present invention is:
a preparation method of a novel AMOLED display structure comprises the following steps:
s1, providing a glass layer 1 of the capacitor area structure 12, and covering the surface of the glass layer 1 with a first metal layer 2;
s2, forming a first insulating layer 3 covering the surface of the first metal layer 2;
s3, forming a second insulating layer 4 covering the surface of the first insulating layer 3;
s4, forming a second metal layer 5 covering the surface of the second insulating layer 4;
s5, forming a third insulating layer 6 covering the surface of the second metal layer 5;
s6, forming a flat layer 7 covering the surface of the third insulating layer 6;
s7, forming a third metal layer 8 covering the surface of the flat layer 7;
s8, forming a pixel defining layer 9 covering the surface of the third metal layer 8 and contacting the planarization layer 7;
s9, forming a first via hole in the pixel defining layer 9, forming a cathode metal layer 11 in the first via hole, and contacting the cathode metal layer 11 and a side of the third metal layer 8 away from the glass layer 1.
In summary, according to the novel AMOLED display structure and the method for manufacturing the same provided by the present invention, the first via hole is formed on the pixel definition layer of the capacitive area structure, the cathode metal layer is filled in the first via hole, and the first via hole is formed on the pixel definition layer, so that the cathode square and the cathode trace can be overlapped, so that the cathode trace in a part of time is assigned to the negative (VSS) potential of the power supply within a frame time, thereby realizing the image display, the cathode trace in a department is assigned to the touch detection signal, thereby realizing the self-capacitive touch sensing, further realizing the embedded touch AMOLED display technology, and replacing the display external part in which the touch unit is provided with the AMOLED in the prior art; the capacitor area structure designed by the scheme reduces the manufacturing cost of the display module by reducing yellow light, etching and stripping the direct evaporation of the manufacturing process to complete the pattern arrangement, and simultaneously enables the AMOLED to be light and thin, so that the manufacturing cost is reduced, the product benefit is improved, and the trend of light and thin of a small-size display panel in the current market is met.
The above description is only an embodiment of the present invention, and not intended to limit the scope of the present invention, and all equivalent changes made by using the contents of the present specification and the drawings, or applied directly or indirectly to the related technical fields, are included in the scope of the present invention.
Claims (10)
1. A novel AMOLED display structure is characterized by comprising a capacitor area structure;
the capacitor area structure comprises a glass layer, a first metal layer, a first insulating layer, a second metal layer, a third insulating layer, a flat layer, a third metal layer, a pixel defining layer and a cathode metal layer, wherein the first metal layer, the first insulating layer, the second metal layer, the third insulating layer, the flat layer, the third metal layer, the pixel defining layer and the cathode metal layer are sequentially arranged on the surface of the glass layer, a first through hole is formed in the pixel defining layer, the cathode metal layer is filled in the first through hole, and the cathode metal layer in the first through hole is in contact with one side face, far away from the glass layer, of the third metal layer.
2. The novel AMOLED display structure of claim 1, further comprising a TFT1 area structure, wherein the TFT1 area structure comprises a glass layer, a first metal layer, a first insulating layer, a semiconductor layer, a second insulating layer, a second metal layer, a third insulating layer, a flat layer, a third metal layer, a pixel defining layer and a cathode metal layer, the first insulating layer, the semiconductor layer, the second insulating layer, the second metal layer, the third insulating layer, the flat layer, the third metal layer, the pixel defining layer and the cathode metal layer of the TFT1 area structure are sequentially disposed on the glass layer surface of the TFT1 area structure, the second insulating layer of the TFT1 area structure is provided with two second vias, the second metal layer of the TFT1 area structure is respectively filled in the two second vias, the second metal layer of the TFT1 area structure is in contact with a side surface of the semiconductor layer of the TFT1 area structure away from the glass layer of the TFT1 area structure, and a third via hole is arranged on the pixel defining layer of the TFT1 area structure, and an organic light-emitting material is filled in the third via hole.
3. The novel AMOLED display structure of claim 1, further comprising a TFT2 area structure, wherein the TFT2 area structure comprises a glass layer, a first metal layer, a first insulating layer, a semiconductor layer, a second insulating layer, a second metal layer, a third insulating layer, a flat layer, a third metal layer, a pixel defining layer and a cathode metal layer, and the first metal layer, the first insulating layer, the semiconductor layer, the second insulating layer, the second metal layer, the third insulating layer, the flat layer, the third metal layer, the pixel defining layer and the cathode metal layer of the TFT2 area structure are sequentially disposed on the glass layer surface of the TFT2 area structure;
be equipped with two fourth via holes on the second insulating layer of TFT2 regional structure, the first insulating layer and the second insulating layer of TFT2 regional structure correspond respectively the position of the first metal layer of TFT2 regional structure is equipped with a sub-node via hole, two the sub-node via hole sets up relatively and communicates, the second metal layer of TFT2 regional structure fill respectively in fourth via hole and sub-node via hole, the second metal layer of filling in the fourth via hole with a side contact of TFT2 regional structure's second metal layer keep away from the glass layer of TFT2 regional structure, the second metal layer of filling in the sub-node via hole with a side contact of TFT2 regional structure's semiconductor layer keeps away from the glass layer of TFT2 regional structure.
4. A novel AMOLED display structure according to claim 1, wherein the cathode metal layer is a semi-transparent metal layer.
5. A novel AMOLED display structure according to claim 1, wherein the cathode metal layer has a thickness of 0.01-0.3 μ ι η.
6. A novel AMOLED display structure according to claim 1, wherein the cathode metal layer is U-shaped.
7. A method of fabricating a novel AMOLED display structure according to claim 1, comprising the steps of:
s1, providing a glass layer of a capacitance area structure, and covering a first metal layer on the surface of the glass layer;
s2, forming a first insulating layer covering the surface of the first metal layer;
s3, forming a second insulating layer covering the surface of the first insulating layer;
s4, forming a second metal layer covering the surface of the second insulating layer;
s5, forming a third insulating layer covering the surface of the second metal layer;
s6, forming a flat layer and covering the surface of the third insulating layer;
s7, forming a third metal layer covering the surface of the flat layer;
s8, forming a pixel defining layer covering the surface of the third metal layer and contacting with the flat layer;
s9, forming a first via hole in the pixel defining layer, forming a cathode metal layer in the first via hole, and contacting the cathode metal layer with a side of the third metal layer away from the glass layer.
8. The method of claim 7, wherein the cathode metal layer is a semi-transparent metal layer.
9. The method of fabricating a novel AMOLED display structure of claim 7, wherein the cathode metal layer has a thickness of 0.01-0.3 μ ι η.
10. The method of claim 7, wherein the cathode metal layer is U-shaped.
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