CN109300963B - AMOLED display structure based on-screen fingerprint identification and preparation method thereof - Google Patents
AMOLED display structure based on-screen fingerprint identification and preparation method thereof Download PDFInfo
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- 229920001621 AMOLED Polymers 0.000 title claims 8
- 238000002360 preparation method Methods 0.000 title abstract description 9
- 239000004065 semiconductor Substances 0.000 claims abstract description 52
- 229910052751 metal Inorganic materials 0.000 claims description 57
- 239000002184 metal Substances 0.000 claims description 57
- 239000011521 glass Substances 0.000 claims description 37
- 239000003990 capacitor Substances 0.000 claims description 30
- 101100214488 Solanum lycopersicum TFT2 gene Proteins 0.000 claims description 28
- 101100489584 Solanum lycopersicum TFT1 gene Proteins 0.000 claims description 16
- 238000000034 method Methods 0.000 claims description 7
- 238000004519 manufacturing process Methods 0.000 claims description 5
- 230000003287 optical effect Effects 0.000 abstract description 7
- 239000011159 matrix material Substances 0.000 abstract description 2
- 230000005669 field effect Effects 0.000 description 12
- 239000010409 thin film Substances 0.000 description 10
- 230000009286 beneficial effect Effects 0.000 description 5
- 239000000463 material Substances 0.000 description 4
- 239000010408 film Substances 0.000 description 3
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 2
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 description 2
- 229910052733 gallium Inorganic materials 0.000 description 2
- 229910052738 indium Inorganic materials 0.000 description 2
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 2
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 2
- 230000008569 process Effects 0.000 description 2
- 238000012827 research and development Methods 0.000 description 2
- 230000004044 response Effects 0.000 description 2
- 238000002834 transmittance Methods 0.000 description 2
- 229910052725 zinc Inorganic materials 0.000 description 2
- 239000011701 zinc Substances 0.000 description 2
- 230000008901 benefit Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
Classifications
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/12—Active-matrix OLED [AMOLED] displays
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/40—OLEDs integrated with touch screens
Abstract
The invention relates to the technical field of AMOLED (active matrix/organic light emitting diode), in particular to an AMOLED display structure based on-screen fingerprint identification and a preparation method thereof. The capacitive area structure in the AMOLED display structure is set to be a transparent structure, the transparent conducting layer and the semiconductor layer form two polar plates of the capacitive structure, and then an avoidance area required by the fingerprint identification under the screen is formed, the integrated new function is improved, and the design of the fingerprint identification under the optical screen is realized.
Description
Technical Field
The invention relates to the technical field of AMOLED (active matrix/organic light emitting diode), in particular to an AMOLED display structure based on-screen fingerprint identification and a preparation method thereof.
Background
Today, the screen is no longer simply used for transmitting consultations such as pictures, videos and the like to users, and technological research and development staff continuously endow new additional functions to the display screen, such as the currently touted screen fingerprint identification technology. Although the screen fingerprint recognition is proposed earlier and a lot of companies are put into research and development, only the optical on-screen fingerprint recognition is adopted by the vio X20 in the screen fingerprint recognition sold in the market at present, and the technical scheme has better power consumption and module thickness advantage compared with the ultrasonic fingerprint recognition. But the fingerprint identification under the optical screen also requires carrying an AMOLED display screen, and meanwhile, devices need to be carried out in a pixel area to avoid, so that fingerprint reflected light can penetrate through an avoidance area to reach a photosensitive sensor below the screen, and fingerprint information collection is realized so as to facilitate further identification and operation.
With the improvement of resolution ratio, sub-pixel (sub-pixel) size is continuously reduced, manufacturing process and design limitation are continuously challenged, meanwhile, an avoidance area of the on-screen fingerprint identification is also arranged, and application of the on-screen fingerprint identification in the high-resolution AMOLED display technology is limited.
Disclosure of Invention
The technical problems to be solved by the invention are as follows: the AMOLED display structure based on the on-screen fingerprint identification and the preparation method thereof are provided, and an avoidance area required by the on-screen fingerprint identification is formed.
In order to solve the technical problems, the first technical scheme adopted by the invention is as follows:
an AMOLED display structure based on-screen fingerprint identification comprises a capacitor area structure;
the capacitor region structure comprises a glass layer, a first insulating layer, a semiconductor layer, a third insulating layer and a transparent conducting layer, wherein the first insulating layer, the semiconductor layer, the third insulating layer and the transparent conducting layer are sequentially arranged on the surface of the glass layer, and the semiconductor layer and the transparent conducting layer are respectively used as two electrodes of a capacitor of the capacitor region structure.
The second technical scheme adopted by the invention is as follows:
a preparation method of an AMOLED display structure based on-screen fingerprint identification comprises the following steps:
s1, providing a glass layer with a capacitor area structure, and covering a first insulating layer on the surface of the glass layer;
s2, forming a semiconductor layer, wherein the semiconductor layer covers the surface of the first insulating layer;
s3, forming a third insulating layer, wherein the third insulating layer covers the surface of the semiconductor layer;
s4, forming a transparent conductive layer, wherein the transparent conductive layer covers the surface of the third insulating layer.
The invention has the beneficial effects that: the capacitive area structure in the AMOLED display structure is set to be a transparent structure, the transparent conducting layer and the semiconductor layer form two electrode plates of the capacitive structure, and then an avoidance area required by fingerprint identification under the screen is formed, the integrated new function is improved, and the design of fingerprint identification under the optical screen is realized.
Drawings
FIG. 1 is a schematic cross-sectional view of an AMOLED display structure based on-screen fingerprint recognition according to the present invention;
FIG. 2 is a flow chart of steps of a method for fabricating an AMOLED display structure based on-screen fingerprint recognition according to the present invention;
FIG. 3 is a schematic diagram of a compensation circuit of an AMOLED display structure based on-screen fingerprint recognition according to the present invention;
description of the reference numerals:
1. TFT1 region structure; 2. a TFT2 region structure; 3. a capacitor region structure; 4, a glass layer;
5. a first metal layer; 6. a first insulating layer; 7. a semiconductor layer; 8. a second insulating layer; 9. a second metal layer; 10. a third insulating layer; 11. a transparent conductive layer; 12. a planarization layer; 13. a third metal layer; 14. a pixel definition layer; 15. an organic light emitting material; c1, a first capacitor; t1, a first thin film field effect transistor;
t2, a first thin film field effect transistor; data, data signals; VDD, supply voltage signal;
gate, gate sweep signal; A. a first node; B. and a second node.
Detailed Description
In order to describe the technical contents, the achieved objects and effects of the present invention in detail, the following description will be made with reference to the embodiments in conjunction with the accompanying drawings.
The most critical concept of the invention is as follows: and setting the capacitance area structure of the AMOLED display structure to be a transparent structure, so as to form an under-screen fingerprint identification avoidance area.
Referring to fig. 1 to 2, the present invention provides a technical solution:
an AMOLED display structure based on-screen fingerprint identification comprises a capacitor area structure;
the capacitor region structure comprises a glass layer, a first insulating layer, a semiconductor layer, a third insulating layer and a transparent conducting layer, wherein the first insulating layer, the semiconductor layer, the third insulating layer and the transparent conducting layer are sequentially arranged on the surface of the glass layer, and the semiconductor layer and the transparent conducting layer are respectively used as two electrodes of a capacitor of the capacitor region structure.
From the above description, the beneficial effects of the invention are as follows: the capacitive area structure in the AMOLED display structure is set to be a transparent structure, the transparent conducting layer and the semiconductor layer form two electrode plates of the capacitive structure, and then an avoidance area required by fingerprint identification under the screen is formed, the integrated new function is improved, and the design of fingerprint identification under the optical screen is realized.
Further, the structure of the TFT2 area is also included;
the TFT2 region structure comprises a glass layer, a first metal layer, a first insulating layer, a semiconductor layer, a second insulating layer, a second metal layer, a third insulating layer and a transparent conductive layer, wherein the first metal layer, the first insulating layer, the semiconductor layer, the second insulating layer, the second metal layer, the third insulating layer and the transparent conductive layer are sequentially arranged on the surface of the glass layer;
the second insulating layer is provided with two first through holes, a sub-connection through hole is formed in the position, corresponding to the first metal layer, of each of the first insulating layer and the second insulating layer, the two sub-connection through holes are oppositely arranged and communicated, a sub-node through hole is further formed in the position, corresponding to the first metal layer, of each of the first insulating layer and the second insulating layer, and the two sub-node through holes are oppositely arranged and communicated;
the second metal layer is filled in the first via hole, the sub-connection via hole and the sub-node via hole respectively, the second metal layer filled in the first via hole is contacted with one side surface of the semiconductor layer far away from the glass layer, and the second metal layers filled in the sub-connection via hole and the sub-node via hole are contacted with one side surface of the first metal layer far away from the glass layer.
Further, the capacitance interval of the capacitance area structure is the thickness of the third insulating layer.
As can be seen from the above description, the thickness of the insulating layer of the capacitor is reduced, so as to improve the capacitance per unit area, which is beneficial to realizing wider process conditions and higher resolution AMOLED display technology.
Further, the transparent conductive layer is made of ITO.
From the above description, it is known that ITO, i.e., indium tin oxide, is a semiconductor transparent conductive film, has excellent conductivity and transparency, and can be more useful for forming a relief area required for fingerprint recognition due to the high light transmittance of ITO.
Further, the oxide medium of the semiconductor layer is IGZO
From the above description, IGZO is an amorphous oxide containing indium, gallium and zinc, and has high carrier mobility, which can greatly increase the charge-discharge rate of a field effect transistor to a pixel electrode, increase the response speed of the pixel, and have a faster panel refresh frequency.
The invention provides another technical scheme that:
a preparation method of an AMOLED display structure based on-screen fingerprint identification comprises the following steps:
s1, providing a glass layer with a capacitor area structure, and covering a first insulating layer on the surface of the glass layer;
s2, forming a semiconductor layer, wherein the semiconductor layer covers the surface of the first insulating layer;
s3, forming a third insulating layer, wherein the third insulating layer covers the surface of the semiconductor layer;
s4, forming a transparent conductive layer, wherein the transparent conductive layer covers the surface of the third insulating layer.
From the above description, the beneficial effects of the invention are as follows: the capacitive area structure in the AMOLED display structure is set to be a transparent structure, an avoidance area required by the fingerprint identification under the screen is formed, and then the integrated new function is improved, and the design of the fingerprint identification under the optical screen is realized.
Further, the capacitance interval of the capacitance area structure is the thickness of the third insulating layer.
As can be seen from the above description, the thickness of the insulating layer of the capacitor is reduced, so as to improve the capacitance per unit area, which is beneficial to realizing wider process conditions and higher resolution AMOLED display technology.
Further, the transparent conductive layer is made of ITO.
From the above description, it is known that ITO, i.e., indium tin oxide, is a semiconductor transparent conductive film, has excellent conductivity and transparency, and can be more useful for forming a relief area required for fingerprint recognition due to the high light transmittance of ITO.
Further, the oxide medium of the semiconductor layer is IGZO.
From the above description, IGZO is an amorphous oxide containing indium, gallium and zinc, and has high carrier mobility, which can greatly increase the charge-discharge rate of a field effect transistor to a pixel electrode, increase the response speed of the pixel, and have a faster panel refresh frequency.
Referring to fig. 1 and 3, a first embodiment of the present invention is as follows:
an AMOLED display structure based on-screen fingerprint identification comprises a TFT1 area structure 1, a TFT2 area structure 2 and a capacitor area structure 3;
the capacitor region structure comprises a glass layer 4, a first insulating layer 5, a semiconductor layer 7, a third insulating layer 8 and a transparent conducting layer 11, wherein the first insulating layer 5, the semiconductor layer 7, the third insulating layer 8 and the transparent conducting layer 11 of the capacitor region structure 3 are sequentially arranged on the surface of the glass layer 4 of the capacitor region structure 3, and the semiconductor layer 7 and the transparent conducting layer 11 of the capacitor region structure 3 are respectively used as two electrodes of a capacitor of the capacitor region structure 3. The capacitance interval of the capacitance area structure 3 is the thickness of the third insulating layer 10, the material of the transparent conductive layer 11 of the capacitance area structure 3 is ITO, a semiconductor transparent conductive film with high conductivity and transparency, the oxide medium of the semiconductor layer 7 of the capacitance area structure 3 is IGZO, light is emitted by the organic luminescent material 15 of the TFT1 area structure 1, and after being reflected by a finger, the finger reaches the fingerprint recognition sensor below the screen through the capacitance of the capacitance area structure 3, and then fingerprint signals are detected.
The TFT2 region structure 2 includes a glass layer 4, a first metal layer 5, a first insulating layer 6, a semiconductor layer 7, a second insulating layer 8, a second metal layer 9, a third insulating layer 10, and a transparent conductive layer 11, where the first metal layer 5, the first insulating layer 6, the semiconductor layer 7, the second insulating layer 8, the second metal layer 9, the third insulating layer 10, and the transparent conductive layer 11 of the TFT2 region structure 2 are sequentially disposed on the surface of the glass layer 4 of the TFT2 region structure 2;
two first through holes are formed in the second insulating layer 8 of the TFT2 region structure 2, one sub-connection through hole is formed in the first insulating layer 6 and the second insulating layer 8 of the TFT2 region structure 2, respectively, corresponding to the first metal layer 5 of the TFT2 region structure 2, the two sub-connection through holes are oppositely arranged and communicated, one sub-node through hole is further formed in the first insulating layer 6 and the second insulating layer 8 of the TFT2 region structure 2, respectively, corresponding to the first metal layer 5 of the TFT2 region structure 2, and the two sub-node through holes are oppositely arranged and communicated;
the second metal layer 9 of the TFT2 region structure 2 is respectively filled in the first via hole, the sub-connection via hole and the sub-node via hole, the second metal layer 9 filled in the first via hole is in contact with one side surface of the semiconductor layer 7 of the TFT2 region structure 2, which is far away from the glass layer 4, and the second metal layers 9 filled in the sub-connection via hole and the sub-node via hole are both in contact with one side surface of the first metal layer 5, which is far away from the glass layer 4;
a first signal via hole is arranged on the third insulating layer 10 of the TFT2 region structure 2, and the transparent conductive layer 11 of the TFT2 region structure 2 is filled in the first signal via hole and is contacted with one side surface of the second metal layer 9 of the TFT2 region structure 2, which is far away from the glass layer 4;
the TFT2 region structure 2 further includes a planarization layer 12 and a third metal layer 13, a second via hole is further disposed on the third insulating layer 10 of the TFT2 region structure 2, a third via hole and a second signal via hole are disposed on the planarization layer 12 of the TFT2 region structure 2, the third via hole is disposed corresponding to the second via hole, the second signal is disposed corresponding to the third via hole, the third metal layer 9 of the TFT2 region structure 2 is respectively filled in the third via hole and the second signal via hole, the third metal layer 13 filled in the second signal via hole contacts with a side surface, far away from the glass layer 4, of the transparent conductive layer 11 of the TFT2 region structure 2, and the third metal layer 13 filled in the third via hole contacts with a side surface, far away from the glass layer 4, of the second metal layer 9 of the TFT2 region structure 2.
The TFT1 region structure 1 includes a glass layer 4, a first metal layer 5, a first insulating layer 6, a semiconductor layer 7, a second insulating layer 8, a second metal layer 9, a third insulating layer 10, a planarization layer 12, a third metal layer 13, and a pixel definition layer 14, where the first metal layer 5, the first insulating layer 6, the semiconductor layer 7, the second insulating layer 8, the second metal layer 9, the third insulating layer 10, the planarization layer 12, the third metal layer 13, and the pixel definition layer 14 of the TFT1 region structure 1 are sequentially disposed on the surface of the glass layer 4 of the TFT1 region structure 1;
two first vias, namely a source via and a drain via, are arranged on the second insulating layer 8 of the TFT1 region structure 1, the first metal layer 5 of the TFT1 region structure 1 is filled in the two first vias and contacts with one side surface of the semiconductor layer 7 of the TFT1 region structure 1, which is far away from the glass layer 4, a fourth via is arranged on the pixel defining layer 14 of the TFT1 region structure 1, and the fourth via is filled with an organic luminescent material 15.
The compensation circuit of the AMOLED display structure is connected as follows:
the compensation circuit of the AMOLED display structure comprises a first capacitor C1, a first thin film field effect transistor T1, a second thin film field effect transistor T2, a Data signal Data, a power supply voltage signal VDD, a grid scanning signal Gate, a first node A and a second node B;
one end of the first capacitor C1 is electrically connected to the power voltage signal VDD and the drain electrode of the second thin film field effect transistor T2, the other end of the first capacitor C1 is electrically connected to the drain electrode of the first thin film field effect transistor T1 and the Gate electrode of the second thin film field effect transistor T2 through the second node B, the Gate electrode of the first thin film field effect transistor T1 is electrically connected to the Gate scan signal Gate, the source electrode of the first thin film field effect transistor T1 is electrically connected to the Data signal Data, and the source electrode of the second thin film field effect transistor T2 is electrically connected to the first node a.
The compensation circuit of the AMOLED display structure corresponds to the cross-section structure of the AMOLED display structure, the first metal layer 5 of the TFT1 region structure 1 corresponds to the Gate scan signal Gate of the compensation circuit, the second metal layer 9 filled in the source via hole of the TFT1 region structure 1 corresponds to the Data signal Data, the third metal layer 13 filled in the sub-second via hole of the TFT2 region structure 2 corresponds to the first node a of the compensation circuit, the third metal layer 13 filled in the second signal via hole of the TFT2 region structure 2 corresponds to the power supply voltage signal VDD of the compensation circuit, and the second metal layer 9 filled in the sub-node via hole of the TFT2 region structure corresponds to the second node B of the compensation circuit.
Referring to fig. 2, a second embodiment of the present invention is as follows:
a preparation method of an AMOLED display structure based on-screen fingerprint identification comprises the following steps:
s1, providing a glass layer 4 of a capacitor region structure 3, and covering a first insulating layer 6 on the surface of the glass layer 4;
s2, forming a semiconductor layer 7, wherein the semiconductor layer 7 covers the surface of the first insulating layer 6; the oxide medium of the semiconductor layer is IGZO.
S3, forming a third insulating layer 10, wherein the third insulating layer 10 covers the surface of the semiconductor layer 7;
s4, forming a transparent conductive layer 11, wherein the transparent conductive layer 11 covers the surface of the third insulating layer 10. The transparent conductive layer is made of ITO.
The capacitance interval of the capacitance area structure is the thickness of the third insulating layer.
In summary, according to the AMOLED display structure based on the on-screen fingerprint identification and the preparation method thereof provided by the invention, the capacitance area structure in the AMOLED display structure is set to be a transparent structure, and the transparent conductive layer and the semiconductor layer form two polar plates of the capacitance structure, so that an avoidance area required by the on-screen fingerprint identification is formed, a new integrated function is improved, and the design of the optical on-screen fingerprint identification is realized.
The foregoing description is only illustrative of the present invention and is not intended to limit the scope of the invention, and all equivalent changes made by the specification and drawings of the present invention, or direct or indirect application in the relevant art, are included in the scope of the present invention.
Claims (7)
1. An AMOLED display structure based on-screen fingerprint identification is characterized by comprising a capacitor area structure;
the capacitor region structure comprises a glass layer, a first insulating layer, a semiconductor layer, a third insulating layer and a transparent conducting layer, wherein the first insulating layer, the semiconductor layer, the third insulating layer and the transparent conducting layer are sequentially arranged on the surface of the glass layer, and the semiconductor layer and the transparent conducting layer are respectively used as two electrodes of a capacitor of the capacitor region structure;
the structure also comprises a TFT1 area structure and a TFT2 area structure;
the TFT2 region structure comprises a glass layer, a first metal layer, a first insulating layer, a semiconductor layer, a second insulating layer, a second metal layer, a third insulating layer and a transparent conductive layer, wherein the first metal layer, the first insulating layer, the semiconductor layer, the second insulating layer, the second metal layer, the third insulating layer and the transparent conductive layer are sequentially arranged on the surface of the glass layer;
the second insulating layer is provided with two first through holes, a sub-connection through hole is formed in the position, corresponding to the first metal layer, of each of the first insulating layer and the second insulating layer, the two sub-connection through holes are oppositely arranged and communicated, a sub-node through hole is further formed in the position, corresponding to the first metal layer, of each of the first insulating layer and the second insulating layer, and the two sub-node through holes are oppositely arranged and communicated;
the second metal layers are respectively filled in the first via hole, the sub-connection via hole and the sub-node via hole, the second metal layers filled in the first via hole are in contact with one side surface of the semiconductor layer far away from the glass layer, and the second metal layers filled in the sub-connection via hole and the sub-node via hole are both in contact with one side surface of the first metal layer far away from the glass layer;
the capacitance interval of the capacitance area structure is the thickness of the third insulating layer;
the TFT1 region structure comprises a glass layer, a first metal layer, a first insulating layer, a semiconductor layer, a second insulating layer, a second metal layer, a third insulating layer, a planarization layer, a third metal layer and a pixel definition layer, wherein the first metal layer, the first insulating layer, the semiconductor layer, the second insulating layer, the second metal layer, the third insulating layer, the planarization layer, the third metal layer and the pixel definition layer of the TFT1 region structure are sequentially arranged on the surface of the glass layer of the TFT1 region structure.
2. The under-screen fingerprint recognition based AMOLED display structure of claim 1, wherein the transparent conductive layer is ITO.
3. The AMOLED display structure based on under-screen fingerprinting of claim 1, wherein the oxide medium of the semiconductor layer is IGZO.
4. A method for manufacturing an AMOLED display structure based on-screen fingerprint recognition as claimed in claim 1, comprising the steps of:
s1, providing a glass layer with a capacitor area structure, and covering a first insulating layer on the surface of the glass layer;
s2, forming a semiconductor layer, wherein the semiconductor layer covers the surface of the first insulating layer;
s3, forming a third insulating layer, wherein the third insulating layer covers the surface of the semiconductor layer;
s4, forming a transparent conductive layer, wherein the transparent conductive layer covers the surface of the third insulating layer.
5. The method for manufacturing an AMOLED display structure based on-screen fingerprint recognition according to claim 4, wherein the capacitance interval of the capacitance area structure is the thickness of the third insulating layer.
6. The method for manufacturing an AMOLED display structure based on-screen fingerprint recognition according to claim 4, wherein the transparent conductive layer is made of ITO.
7. The method for manufacturing an AMOLED display structure based on-screen fingerprint recognition according to claim 4, wherein the oxide medium of the semiconductor layer is IGZO.
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| CN110112143B (en) * | 2019-04-29 | 2024-02-27 | 福建华佳彩有限公司 | High-resolution AMOLED display structure and preparation method thereof |
| CN110112144B (en) * | 2019-04-29 | 2024-04-16 | 福建华佳彩有限公司 | TFT structure for high-resolution display and preparation method thereof |
| CN110930883B (en) * | 2019-12-12 | 2021-09-10 | 昆山国显光电有限公司 | Display panel and display device |
| CN111223910A (en) * | 2020-03-18 | 2020-06-02 | 武汉华星光电半导体显示技术有限公司 | Display substrate |
| CN111755487A (en) * | 2020-06-17 | 2020-10-09 | 福建华佳彩有限公司 | Novel AMOLED display structure and preparation method thereof |
| CN111755488A (en) * | 2020-06-17 | 2020-10-09 | 福建华佳彩有限公司 | AMOLED display screen structure and preparation method thereof |
| CN111863907A (en) * | 2020-07-28 | 2020-10-30 | 福建华佳彩有限公司 | Display panel with fingerprint identification function |
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| CN209056495U (en) * | 2018-10-18 | 2019-07-02 | 福建华佳彩有限公司 | Structure is shown based on the AMOLED for shielding lower fingerprint recognition |
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| KR100867926B1 (en) * | 2007-06-21 | 2008-11-10 | 삼성에스디아이 주식회사 | Organic light emitting diode display device and fabrication method of the same |
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| CN104170069A (en) * | 2012-03-12 | 2014-11-26 | 夏普株式会社 | Semiconductor device and method for manufacturing same |
| CN108615019A (en) * | 2018-04-28 | 2018-10-02 | 上海天马有机发光显示技术有限公司 | A kind of display panel and display device |
| CN209056495U (en) * | 2018-10-18 | 2019-07-02 | 福建华佳彩有限公司 | Structure is shown based on the AMOLED for shielding lower fingerprint recognition |
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