CN111740001A - Semiconductor device and method of forming the same - Google Patents
Semiconductor device and method of forming the same Download PDFInfo
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- CN111740001A CN111740001A CN202010067463.5A CN202010067463A CN111740001A CN 111740001 A CN111740001 A CN 111740001A CN 202010067463 A CN202010067463 A CN 202010067463A CN 111740001 A CN111740001 A CN 111740001A
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
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Abstract
The invention provides a semiconductor device and a forming method thereof. By forming the protective layer, the protective layer is arranged between the photoresist layer and the passivation layer at intervals, so that the film layer below the protective layer can be prevented from being damaged under the protection of the intervals of the protective layer. Specifically, the passivation layer can be prevented from being exposed when the photoresist layer is stripped, and further, the suspended part in the passivation layer can be prevented from being damaged, so that the size of the suspended part in the passivation layer can be further increased on one hand, and the performance of the device can be improved; on the other hand, when the photoresist layer is removed, the spraying pressure of the stripping liquid can be further increased so as to improve the stripping efficiency of the photoresist layer and solve the problem that the photoresist layer cannot be completely removed.
Description
Technical Field
The present invention relates to the field of semiconductor technology, and more particularly, to a semiconductor device and a method for forming the same.
Background
Semiconductor devices, which are made using the inverse piezoelectric effect of piezoelectric materials, are key elements of crystal oscillators and filters, which are often applied to bulk acoustic wave filters. Fig. 1a to 1c are schematic structural views of a semiconductor device in a manufacturing process thereof, and a method for forming the semiconductor device, as shown in fig. 1a to 1c, may include the following steps.
Step one, specifically referring to fig. 1a, a substrate 10 is provided, and a lower electrode layer 21, a piezoelectric material layer 30, an upper electrode layer 40 and a passivation layer 50 are sequentially formed on the substrate 10.
The passivation layer 50 further has a suspended portion 51 extending from the upper electrode layer 40, and the suspended portion 51 is suspended above the piezoelectric material layer 30. And a contact window 31 is further formed in the piezoelectric material layer 30, and the contact window 31 exposes the extraction electrode 22, so that a contact pad can be formed on the extraction electrode 22 in a subsequent process.
Step two, referring to fig. 1b specifically, a photoresist layer 70 is formed on the substrate 10, and the photoresist layer 70 covers the passivation layer 50 correspondingly. Further, the extraction electrode 22 is exposed from the photoresist layer 70, and specifically, the contact window 31 is exposed from the photoresist layer 70.
Step three, with continuing reference to fig. 1b, a conductive material layer 80 is formed, wherein the conductive material layer 80 includes a second portion 82 covering the photoresist layer 70, and the conductive material layer 80 further includes a first portion 81 covering the extraction electrode 22, i.e., the first portion 81 of the conductive material layer 80 is formed in the contact window.
Step four, specifically referring to fig. 1c, the photoresist layer 70 is stripped to remove the second portion of the conductive material layer covering the photoresist layer, and the first portion of the conductive material layer on the extraction electrode 22 is retained to form a contact pad 80 a.
It should be noted that, in the process of stripping the photoresist layer 70, the stripping solution is usually sprayed on the photoresist layer 70 with a large spraying pressure. However, a high spraying pressure may also act on the passivation layer 50 at the same time, and the suspended portion 51 of the passivation layer 50 is easily damaged under the force of the high-pressure spraying (for example, see the dashed box in fig. 1 c). Based on this, in order to avoid the damage of the suspended portion 51 of the passivation layer 50, the spraying pressure of the stripping liquid is usually reduced, however, this will directly cause the problem that the photoresist layer 70 is not stripped cleanly. Also, the stripping liquid used for stripping the photoresist layer 70 may attack, for example, the passivation layer 50 or the piezoelectric material layer 30, and the like, thereby inevitably affecting the device performance. In addition, since the photoresist material of the photoresist layer 70 is easily introduced into the space below the suspended portion 51 of the passivation layer 50, the photoresist material introduced into the space below the suspended portion 51 is also difficult to be removed.
Disclosure of Invention
The invention aims to provide a method for forming a semiconductor device, which solves the problem that a suspended part of a passivation layer is easy to damage in the conventional forming method.
In order to solve the above technical problem, the present invention provides a method for forming a semiconductor device, including:
providing a substrate, wherein a lower electrode layer and an extraction electrode are formed on the substrate, a piezoelectric material layer, an upper electrode layer and a passivation layer are further sequentially formed on the lower electrode layer and the extraction electrode, the extraction electrode is used for being electrically connected with the lower electrode layer or the upper electrode layer, the passivation layer is provided with a suspended part extending from the upper electrode layer, and the suspended part is suspended and covered above the piezoelectric material layer;
forming a protective layer on the substrate, wherein the protective layer covers the top surface of the passivation layer and the side wall of the suspension part and extends to cover the top surface of the piezoelectric material layer;
forming a light resistance layer on the protective layer, wherein an opening is formed in the light resistance layer, and at least part of the extraction electrode is exposed from the opening;
forming a conductive material layer, wherein the conductive material layer covers the light resistance layer, and the conductive material layer also covers the extraction electrode exposed in the opening;
stripping the photoresist layer to remove the part of the conductive material layer covering the photoresist layer and reserve the part of the conductive material layer covering the extraction electrode to form a contact pad; and the number of the first and second groups,
and removing the protective layer.
Optionally, a contact window is formed in the piezoelectric material layer, the extraction electrode is exposed in the contact window, and the contact window is exposed by the opening of the photoresist layer, so that the conductive material layer is formed in the contact window to cover the extraction electrode and form the contact pad.
Optionally, an end portion of the upper electrode layer near the contact window is exposed from the passivation layer; and the end portion of the upper electrode layer and the contact window are exposed in the opening of the photoresist layer, and a portion of the conductive material layer covering the end portion and a portion formed in the contact window are connected to each other, so that the upper electrode layer and the extraction electrode are electrically connected.
Optionally, when the protective layer is formed, the protective layer further fills the contact window; when the light resistance layer is formed, the opening of the light resistance layer is positioned above the contact window; and, after forming the photoresist layer, further comprising: and etching the protective layer by taking the photoresist layer as a mask, and removing the part of the protective layer filled in the contact window to expose the extraction electrode.
Optionally, a top surface position of a portion of the conductive material layer formed in the contact window is between a bottom surface position and a top surface position of the protection layer.
Optionally, the protective layer covers a sidewall of the suspended portion, and does not fill a space below the suspended portion, so as to cover a lateral opening of the space below the suspended portion.
Optionally, the pressure acting on the protective layer when removing the protective layer is less than the pressure acting on the photoresist layer when stripping the photoresist layer
Based on the above formation method, the present invention also provides a semiconductor device including:
a substrate;
an extraction electrode formed on the substrate;
a lower electrode layer formed on the substrate;
a piezoelectric material layer formed on the substrate and covering the lower electrode layer and the extraction electrode;
an upper electrode layer formed on the piezoelectric material layer;
a passivation layer formed on the upper electrode layer and having a suspended portion extending from the upper electrode layer, the suspended portion being suspended over the piezoelectric material layer;
and a contact pad formed on the extraction electrode to be electrically connected with the upper electrode layer or the lower electrode layer through the extraction electrode.
Optionally, a contact window is formed in the piezoelectric material layer, at least a portion of the extraction electrode is disposed at the bottom of the contact window, and the contact pad is formed in the contact window to be electrically connected to the extraction electrode.
Optionally, an end portion of the upper electrode layer close to the contact window is exposed from the passivation layer, and the contact pad is formed in the contact window and extends to cover the end portion of the upper electrode layer, so that the upper electrode layer is electrically connected to the extraction electrode.
In the method for forming the semiconductor device, before forming the photoresist layer, a protective layer is formed to protect the film layer below the protective layer. Specifically, the protective layer is arranged between the photoresist layer and the passivation layer, so that the passivation layer can be prevented from being exposed when the photoresist layer is stripped, and accordingly, the suspended part in the passivation layer can be prevented from being damaged. At this time, on one hand, the size of the suspended part in the passivation layer can be further increased to improve the device performance; on the other hand, when the photoresist layer is removed, the spraying pressure of the stripping liquid can be further increased so as to improve the stripping efficiency of the photoresist layer and solve the problem that the photoresist layer cannot be completely removed. In addition, under the protection of the interval of the protective layer, the problem that the film layer below the protective layer is corroded by the stripping liquid of the photoresist layer can be prevented.
Drawings
FIGS. 1a to 1c are schematic structural views of a semiconductor device during a manufacturing process thereof;
fig. 2 is a schematic flow chart illustrating a method of forming a semiconductor device in accordance with an embodiment of the present invention;
fig. 3a to fig. 3f are schematic structural diagrams of a method for forming a semiconductor device in a manufacturing process of the semiconductor device according to an embodiment of the invention.
Wherein the reference numbers are as follows:
10-a substrate; 100-a substrate;
21-a lower electrode layer; 210-a lower electrode layer;
22-an extraction electrode; 220-extraction electrode;
30-a layer of piezoelectric material; 300-a layer of piezoelectric material;
31-a contact window; 310-a contact window;
40-an upper electrode layer; 400-upper electrode layer;
50-a passivation layer; 500-a passivation layer;
51-a suspended portion; 510-a free space;
600-a protective layer;
70-a photoresist layer; 700-a photoresist layer;
710-an opening;
80-a layer of conductive material; 800-a layer of conductive material;
81-first part; 810-a first portion;
82-a second portion; 820-a second portion;
80 a-a contact pad; 800 a-contact pad.
Detailed Description
As described in the background art, in the current method for manufacturing a semiconductor device, when the photoresist layer is removed based on a high spraying pressure, the suspended portion of the passivation layer is easily damaged. Therefore, even if the spraying pressure is reduced to avoid the damage of the suspended portion, the problem of incomplete photoresist layer removal is caused.
Therefore, the invention provides a method for forming a semiconductor device, which can prevent the problem that the suspended part in the passivation layer is damaged on the basis of completely removing the photoresist layer. For example, referring to fig. 2, the method for forming the semiconductor device includes:
step S100, providing a substrate, wherein a lower electrode layer and an extraction electrode are formed on the substrate, a piezoelectric material layer, an upper electrode layer and a passivation layer are further sequentially formed on the lower electrode layer and the extraction electrode, the extraction electrode is used for being electrically connected with the lower electrode layer or the upper electrode layer, the passivation layer is provided with a suspended part extending from the upper electrode layer, and the suspended part is suspended and covered above the piezoelectric material layer;
step S200, forming a protective layer on the substrate, wherein the protective layer covers the top surface of the passivation layer and the side wall of the suspension part and extends to cover the top surface of the piezoelectric material layer;
step S300, forming a light resistance layer on the protective layer, wherein an opening is formed in the light resistance layer, and at least part of the extraction electrode is exposed from the opening;
step S400, forming a conductive material layer, wherein the conductive material layer covers the light resistance layer, and the conductive material layer also covers the extraction electrode exposed in the opening;
step S500, stripping the light resistance layer to remove the part of the conductive material layer covering the light resistance layer and reserve the part of the conductive material layer covering the extraction electrode to form a contact pad;
and step S600, removing the protective layer.
Namely, in the forming method provided by the invention, the protective layer is arranged, so that the film layer below the protective layer can be effectively protected when the photoresist layer is stripped, and the film layer below the protective layer is prevented from being damaged.
The semiconductor device and the method for forming the same according to the present invention will be described in further detail with reference to the accompanying drawings and specific embodiments. The advantages and features of the present invention will become more apparent from the following description. It is to be noted that the drawings are in a very simplified form and are not to precise scale, which is merely for the purpose of facilitating and distinctly claiming the embodiments of the present invention.
Fig. 3a to fig. 3f are schematic structural diagrams of a method for forming a semiconductor device in a manufacturing process of the semiconductor device according to an embodiment of the invention.
In step S100, referring to fig. 3a specifically, a substrate 100 is provided, a lower electrode layer 210 and an extraction electrode 220 are sequentially formed on the substrate 100, and a piezoelectric material layer 300, an upper electrode layer 400 and a passivation layer 500 are further sequentially formed on the lower electrode layer 210 and the extraction electrode 220, the passivation layer 500 has a suspended portion 510 laterally extending from the upper electrode layer 400, and the suspended portion 510 is suspended above the piezoelectric material layer 300.
In this embodiment, the first end portion of the passivation layer 500 extending laterally from the upper electrode layer 400 forms the suspended portion 510, that is, the suspended portion 510 is provided in the semiconductor device, so that when the semiconductor device is applied to a bulk acoustic wave filter, the energy loss of the longitudinal mechanical wave can be effectively reduced, which is beneficial to improving the quality factor (Q value) of the bulk acoustic resonator.
Wherein the substrate 100 may be adjusted accordingly depending on the particular application of the semiconductor device being formed. For example, when the formed semiconductor device is used to constitute a Bulk Acoustic Wave (BAW), the substrate 100 may include a multi-layer bragg reflective layer; alternatively, when the semiconductor device may further form a Film Bulk Acoustic Resonator (FBAR) filter, the substrate 100 may be a silicon substrate.
Further, projection images of the lower electrode layer 210 and the upper electrode layer 400 projected on the same horizontal plane at least partially overlap. And, the lower electrode layer 210 and the upper electrode layer 400 may be formed using the same material. For example, the material of the lower electrode layer 210 and the upper electrode layer 400 may each include a metal material, and particularly, the metal material includes, for example, molybdenum (Mo). And, the material of the piezoelectric material layer 300 may include at least one of zinc oxide (ZnO), aluminum nitride (AlN), and lead zirconate titanate (PZT). In addition, in a specific embodiment, the passivation layer 500 may also be formed of the same material as the piezoelectric material layer 300, for example, each including aluminum nitride (AlN) or the like.
In this embodiment, the extraction electrode 220 is used to be electrically connected to the lower electrode layer 210 or the upper electrode layer 400, so that the lower electrode layer 210 or the upper electrode layer 400 can be electrically extracted through the extraction electrode 220. It can be understood that, when the lower electrode layer 210 realizes electrical extraction through the extraction electrode 220, a partial region of the lower electrode layer 210 may be considered to constitute the extraction electrode 220; alternatively, when the upper electrode layer 400 is electrically extracted through the extraction electrode 220, the upper electrode layer 400 and the extraction electrode 200 may be electrically connected through a conductive material in a subsequent process.
With continued reference to fig. 3a, at least one contact window is formed in the piezoelectric material layer 300, and the contact window exposes the extraction electrode 220, so that a contact pad can be formed in the contact window in a subsequent process to electrically extract the upper electrode layer and/or the lower electrode layer.
In this embodiment, the example that the extraction electrode 220 is electrically connected to the upper electrode layer 400, so that the upper electrode layer 400 is electrically extracted through the extraction electrode 220 is explained. And, in the subsequent process, through the contact window 310, not only the extraction electrode 220 and the upper electrode layer 400 can be electrically connected to each other, but also a contact pad can be further prepared in the contact window 310, so as to further realize the electrical extraction of the upper electrode layer 400.
Further, the passivation layer 500 exposes a portion of the upper electrode layer 400 near the second end of the contact window 310. That is, a portion of the upper electrode layer 400 near the contact hole 310 is exposed from the passivation layer 500 and constitutes a connection portion, which facilitates electrical connection between the exposed connection portion of the upper electrode layer 400 and the extraction electrode 220.
Alternatively, the extraction electrode 220 and the lower electrode layer 210 may be formed simultaneously, and the preparation method thereof includes: first, an electrode material layer is formed on the substrate 100; then, the electrode material layer is patterned to form the extraction electrode 220 and the lower electrode layer 210, respectively, and the extraction electrode 220 and the lower electrode layer 210 are separated from each other.
In step S200, referring specifically to fig. 3b, a protection layer 600 is formed on the substrate 100, wherein the protection layer 600 covers the top surface of the passivation layer 500 and the sidewalls of the suspended portion 510, and extends to cover the top surface of the piezoelectric material layer 300.
It should be noted that, by forming the protection layer 600, the passivation layer 500 and the film layer therebelow can be effectively protected, and the passivation layer 500 and the film layer therebelow are prevented from being damaged in the subsequent process, in particular, the suspended portion 510 of the passivation layer 500 can be effectively protected, and the problem that the suspended portion 510 is easily collapsed in the subsequent process is solved. In addition, it should be noted that, due to the protective layer 600, even if the size of the suspended portion 510 is increased, the integrity of the suspended portion 510 can still be ensured, which is further beneficial to further improving the device performance.
In this embodiment, the protection layer 600 may be formed by, for example, a vapor deposition process, so that the protection layer 600 covers the sidewall of the suspended portion 510, and the lower space covered by the suspended portion 510 is not filled, but only the lateral opening of the lower space is covered, thereby avoiding the problem of material residue of the protection layer when the protection layer 600 is subsequently removed. The material of the protection layer 600 includes, for example, at least one of silicon oxide (SiO) and polysilicon, and the silicon oxide may specifically include phosphosilicate glass (PSG).
With continued reference to fig. 3b, the protective layer 600 covers the passivation layer 500 and the piezoelectric material layer 300 and also fills the contact windows 310. In this embodiment, the portion of the protection layer 600 filled in the contact window 310 and the portion covering the connection portion of the upper electrode layer 400 may be removed under the mask of the photoresist layer after the photoresist layer is formed subsequently. Of course, in other embodiments, before forming the photoresist layer, the portion of the protection layer 600 filling the contact window 310 and the portion covering the connection portion may be removed to expose the connection portion between the extraction electrode 220 and the upper electrode layer 400.
In step S300, referring to fig. 3c in particular, a photoresist layer 700 is formed on the protection layer 600, an opening 710 is formed in the photoresist layer 700, and at least a portion of the extraction electrode 220 is exposed from the opening 710.
In this embodiment, a Lift-off process (Lift-off) is used to prepare a contact pad on the extraction electrode 220, and the extraction electrode 220 is exposed through the opening 710 in the photoresist layer 700, so that the contact pad can be formed on the extraction electrode 220 in a subsequent process.
In this embodiment, the opening 710 of the photoresist layer 700 exposes the contact 310, and further exposes the extraction electrode 220 in the contact 310. In addition, a portion of the upper electrode layer 400 is exposed in the opening 710 of the photoresist layer 700, and the connection portion of the upper electrode layer 400 and the extraction electrode 220 are exposed in the same opening 710, so that the upper electrode layer 400 and the extraction electrode 220 can be further electrically connected.
With reference to fig. 3c, in the photoresist layer 700, the opening size of the opening 710 decreases from bottom to top, so that the sidewall of the opening 710 is an inclined sidewall. Specifically, the cross-sectional shape of the opening 710 of the photoresist layer 700 is, for example, a trapezoid. Therefore, when a conductive material layer is formed subsequently, the conductive material covering the sidewall of the photoresist layer 700 can be effectively reduced, and the conductive material covering the photoresist layer 700 and the conductive material covering the extraction electrode 220 are prevented from being connected with each other, thereby facilitating the reduction of the difficulty in stripping the photoresist layer.
Further, the photoresist layer 700 may specifically adopt a negative photoresist, so that the openings 710 formed in the photoresist layer 700 may have a trapezoid structure with decreasing opening size from bottom to top.
In addition, as described above, in the present embodiment, before the photoresist layer 700 is formed, the protection layer 600 covers the connection portion of the upper electrode layer 400 and fills the contact window 310. And, after forming the photoresist layer 700, the opening 710 of the photoresist layer 700 exposes the portion of the protection layer 600 covering the connection portion and filling in the contact window 310, based on which, the protection layer exposed in the opening 710 may be etched under the mask of the photoresist layer 700 to expose the connection portion of the upper electrode layer 400 and the extraction electrode 220 in the contact window 310. Also, in the present embodiment, the remaining protective layer 600 is formed over the piezoelectric material layer 300.
In step S400, referring specifically to fig. 3d, a conductive material layer 800 is formed, wherein the conductive material layer 800 covers the photoresist layer 700, and the conductive material layer 800 also covers the extraction electrode 220 exposed in the opening 710. In this embodiment, the conductive material layer 800 fills the contact window 310 to cover the extraction electrode 220.
The forming method of the conductive material layer 800 includes, for example, an evaporation process, and the material of the conductive material layer 800 includes, for example, at least one of aluminum (Al), gold (Au), copper (Cu), and molybdenum (Mo).
Further, since the opening 710 of the photoresist layer 700 exposes the connection portion of the upper electrode layer 400 and the extraction electrode 220 in the contact window, the connection portion of the upper electrode layer 400 and the extraction electrode 220 are partially covered in the opening 710 in the conductive material layer 800, so that the connection portion of the upper electrode layer 400 and the extraction electrode 220 are connected to each other.
It can be considered that the portion of the conductive material layer 800 covering the photoresist layer 700 constitutes the second portion 820, and the portion of the conductive material layer 800 corresponding to the opening 710 constitutes the first portion 810. In this embodiment, the first portion 810 of the conductive material layer 800 connects the upper electrode layer 400 and the extraction electrode 220 and is used to form a contact pad. Further, the top surface of the first portion 810 covering the upper electrode layer 400 is flush with the top surface of the contact hole.
With continued reference to fig. 3d, in the present embodiment, the passivation layer 500 is spaced apart from the photoresist layer 700 by the protection layer 600, so that there is a large height difference from the passivation layer 500 to the photoresist layer 700, and thus, the first portion 810 of the conductive material layer 800 corresponding to the opening 710 is not connected to the photoresist layer 700. Specifically, the first portion 810 covers the inner wall of the protection layer 600 facing the contact, and the first portion 810 is not higher than the top of the protection layer 600, that is, the top surface of the first portion 810 is not higher than the bottom surface of the photoresist layer 700 (in the embodiment, the top surface of the first portion 810 is between the bottom surface and the top surface of the protection layer 600), so that the first portion 810 is not connected to the sidewall of the photoresist layer 700, and therefore, when the photoresist layer 700 is subsequently stripped, the photoresist layer 700 is prevented from generating a pulling force on the first portion 810, thereby not only reducing the stripping difficulty of the photoresist layer 700, but also avoiding damage to the first portion 810.
As described above, the photoresist layer 700 in this embodiment has the inclined sidewall, so that the conductive material formed on the inclined sidewall can be reduced when the conductive material layer 800 is prepared, and the protective layer 600 is further formed under the photoresist layer 700, so that the second portion 820 of the conductive material layer 800 covering the photoresist layer 700 and the first portion 810 corresponding to the opening 710 are difficult to be connected to each other. That is, in the conductive material layer 800, the first portion 810 and the second portion 820 are separated from each other, so that the difficulty of stripping the photoresist layer 700 can be further reduced, and the first portion 810 is prevented from being involved in the stripping process of the photoresist layer.
In addition, it should be noted that the photoresist layer is usually formed by a coating process, and at this time, the photoresist layer will easily fill the exposed gap, for example, as shown in fig. 1b, when the photoresist layer is directly formed on the passivation layer, the photoresist layer is very easy to fill the space below the suspended portion, which may cause a problem that the photoresist material in the space below the suspended portion is difficult to be removed when the photoresist layer is subsequently removed. In contrast, in the embodiment, the protection layer 600 is disposed, so that the photoresist layer 700 is formed on the passivation layer 500 at intervals, and the space below the suspended portion 510 of the passivation layer 500 is not filled, thereby effectively improving the problem of incomplete removal of the photoresist layer 700.
In step S500, referring to fig. 3e specifically, the photoresist layer 700 is stripped to remove the portion of the conductive material layer 800 covering the photoresist layer 700, and the portion of the conductive material layer 800 covering the extraction electrode 220 is retained to form a contact pad 800a, where the contact pad 800a is electrically connected to the upper electrode layer or the lower electrode layer.
In this embodiment, a portion of the conductive material layer 800 located in the contact hole forms a contact pad 800a, and the contact pad 800a is electrically connected to the upper electrode layer 400.
Specifically, in the process of stripping the photoresist layer 700, a stripping solution is usually sprayed on the photoresist layer 700 at a relatively high spraying pressure, so as to achieve the stripping process of the photoresist layer 700. It should be noted that, in this embodiment, the protection layer 600 is disposed between the passivation layer 500 and the photoresist layer 700, so that under the protection of the protection layer 600, a high-strength spraying pressure can be prevented from acting on the passivation layer 500, and especially, the high-strength spraying pressure cannot act on the suspended portion 510 of the passivation layer 500, so that the suspended portion 510 can be effectively prevented from collapsing. Based on this, in an alternative scheme, the spraying pressure of the stripping liquid can be further increased to improve the removal efficiency of the photoresist layer 700.
And, since the passivation layer 500 and the piezoelectric material layer 300 can be covered by the protective layer 600, corrosion by the peeling liquid is prevented.
In addition, as described above, the first portion and the second portion of the conductive material layer in this embodiment are separated from each other, and the first portion is not connected to the photoresist layer, so that the difficulty of stripping the photoresist layer can be effectively reduced, the first portion is prevented from being pulled by the stripping process of the photoresist layer, and the edge of the formed contact pad 800a is prevented from being damaged.
In step S600, specifically referring to fig. 3f, the protection layer 600 is removed. Specifically, the method for removing the protection layer 600 includes, for example, an etching process. And, the etching process may include a dry etching process and/or a wet etching process.
It should be noted that the pressure acting on the protective layer 600 when removing the protective layer 600 is much lower than the pressure acting on the photoresist layer 700 when stripping the photoresist layer 700. Therefore, when the protective layer 600 is removed to expose the passivation layer 500, the pressure applied on the passivation layer 500 can be greatly reduced, and the problem that the suspended portion 510 of the passivation layer 500 is easily damaged can be effectively improved.
In addition, in a specific embodiment, the method for forming the semiconductor device further includes: a cavity is formed in the substrate 100 under the lower electrode layer 210. Specifically, the method for forming the cavity may specifically include:
first, before forming the lower electrode layer, a sacrificial layer is filled in the substrate 100;
next, the steps S100 to S500 described above are sequentially performed, and in the process of performing the steps S100 to S500, a through hole is also formed in the piezoelectric material layer 300, the through hole penetrating the piezoelectric material layer 300 to extend to the sacrificial layer;
then, after the step S600 is performed to remove the protection layer 600, the through hole may be exposed, so that the sacrificial layer may be removed through the through hole to form a cavity in the substrate 100. The step of removing the sacrificial layer through the through hole may be performed simultaneously with the step of removing the protective layer, that is, the etchant for etching the protective layer 600 may further etch the sacrificial layer through the through hole to remove the sacrificial layer.
Based on the above forming method, the present embodiment further provides a semiconductor device, which can be specifically shown in fig. 3f, and the semiconductor device includes:
a substrate 100;
an extraction electrode 220 formed on the substrate 100;
a lower electrode layer 210 formed on the substrate 100;
a piezoelectric material layer 300 formed on the substrate 100 and covering the lower electrode layer 210 and the extraction electrode 220;
an upper electrode layer 400 formed on the piezoelectric material layer 300, wherein the lower electrode layer 400 and the upper electrode layer 210 at least partially overlap in a projection in a height direction;
a passivation layer 500 formed on the upper electrode layer 400, wherein the passivation layer 500 has a suspended portion 510 extending from the upper electrode layer 400, and the suspended portion 510 is suspended above the piezoelectric material layer 300; and the number of the first and second groups,
a contact pad 800a formed on the extraction electrode 220 to be electrically connected to the upper electrode layer 400 or the lower electrode layer 210 through the extraction electrode 220, so that electrical extraction of the upper electrode layer 400 or the lower electrode layer 210 can be further achieved through the contact pad 800a and the extraction electrode 220.
It should be noted that, the semiconductor device manufactured based on the above-described forming method not only can effectively ensure the integrity of the suspended portion 510 in the passivation layer 500, but also can further realize that the suspended portion 510 in the passivation layer 500 can have a larger size, so that the performance of the device can be further improved.
And, a contact window having at least a portion of the extraction electrode 220 therein is formed in the piezoelectric material layer 300, and the contact pad 800a is formed in the contact window to be electrically connected to the extraction electrode 220.
In this embodiment, the extraction electrode 220 is used to electrically connect with the upper electrode layer 400, and the extraction electrode 220 is formed in the contact window 310 to be electrically extracted through the contact pad 800a in the contact window 310.
Further, an end portion of the upper electrode layer 400 near the contact window 310 is also exposed from the passivation layer 500. Based on this, while the contact pad 800a fills the electrode contact window 310 to electrically connect with the extraction electrode 220, the contact pad 800a further covers the end of the upper electrode layer 400, thereby electrically connecting the upper electrode layer 400 and the extraction electrode 220.
In summary, in the method for forming a semiconductor device in this embodiment, by forming the protection layer, the passivation layer and the film layer below the passivation layer can be effectively protected, so that the passivation layer and the film layer below the passivation layer are prevented from being damaged in the subsequent process, and particularly, the problem that the suspended portion of the passivation layer is easily collapsed in the subsequent process can be effectively protected. Therefore, when the photoresistive layer is stripped, the spraying pressure of the stripping liquid can be further increased so as to improve the stripping efficiency of the photoresistive layer and avoid the phenomenon that the photoresistive layer is not completely removed. And under the protection of the interval of the protective layer, the size of the suspended part of the passivation layer is allowed to be further increased, so that the integrity of the suspended part can be ensured, and the device performance is further improved.
Meanwhile, a protective layer is arranged between the passivation layer and the photoresist layer, so that a larger height difference exists between the passivation layer and the photoresist layer, and at the moment, the part of the conductive material layer formed on the extraction electrode cannot reach the photoresist layer. Therefore, when the photoresistance layer is subsequently stripped, the part of the conductive material layer formed on the extraction electrode can be prevented from being subjected to the pulling force of the photoresistance layer, the stripping difficulty of the photoresistance layer is reduced, and the damage to the finally formed contact pad can be avoided.
Furthermore, compared with the traditional process in which the photoresist layer is directly formed on the passivation layer, in the embodiment, the protective layer is arranged, so that the protective layer is arranged between the photoresist layer and the passivation layer, and the photoresist layer does not fill the lower space of the suspended part of the passivation layer, thereby effectively improving the problem that the photoresist layer cannot be removed cleanly.
It should be noted that, although the present invention has been described with reference to the preferred embodiments, the present invention is not limited to the embodiments. It will be apparent to those skilled in the art from this disclosure that many changes and modifications can be made, or equivalents modified, in the embodiments of the invention without departing from the scope of the invention. Therefore, any simple modification, equivalent change and modification made to the above embodiments according to the technical essence of the present invention are still within the protection scope of the technical solution of the present invention, unless the content of the technical solution of the present invention is departed from.
It should be further understood that the terms "first," "second," "third," and the like in the description are used for distinguishing between various components, elements, steps, and the like, and are not intended to imply a logical or sequential relationship between various components, elements, steps, or the like, unless otherwise indicated or indicated.
It is also to be understood that the terminology used herein is for the purpose of describing particular embodiments only, and is not intended to limit the scope of the present invention. It must be noted that, as used herein and in the appended claims, the singular forms "a," "an," and "the" include plural referents unless the context clearly dictates otherwise. For example, reference to "a step" or "an apparatus" means a reference to one or more steps or apparatuses and may include sub-steps as well as sub-apparatuses. All conjunctions used should be understood in the broadest sense. And, the word "or" should be understood to have the definition of a logical "or" rather than the definition of a logical "exclusive or" unless the context clearly dictates otherwise. Further, implementation of the methods and/or apparatus of embodiments of the present invention may include performing the selected task manually, automatically, or in combination.
Claims (10)
1. A method of forming a semiconductor device, comprising,
providing a substrate, wherein a lower electrode layer and an extraction electrode are formed on the substrate, a piezoelectric material layer, an upper electrode layer and a passivation layer are further sequentially formed on the lower electrode layer and the extraction electrode, the extraction electrode is used for being electrically connected with the lower electrode layer or the upper electrode layer, the passivation layer is provided with a suspended part extending from the upper electrode layer, and the suspended part is suspended and covered above the piezoelectric material layer;
forming a protective layer on the substrate, wherein the protective layer covers the top surface of the passivation layer and the side wall of the suspension part and extends to cover the top surface of the piezoelectric material layer;
forming a light resistance layer on the protective layer, wherein an opening is formed in the light resistance layer, and at least part of the extraction electrode is exposed from the opening;
forming a conductive material layer, wherein the conductive material layer covers the light resistance layer, and the conductive material layer also covers the extraction electrode exposed in the opening;
stripping the photoresist layer to remove the part of the conductive material layer covering the photoresist layer and reserve the part of the conductive material layer covering the extraction electrode to form a contact pad; and the number of the first and second groups,
and removing the protective layer.
2. The method for forming a semiconductor device according to claim 1, wherein a contact window in which the extraction electrode is exposed is formed in the piezoelectric material layer, and the opening of the photoresist layer exposes the contact window, so that the conductive material layer is formed in the contact window to cover the extraction electrode and constitute the contact pad.
3. The method for forming a semiconductor device according to claim 2, wherein an end portion of the upper electrode layer near the contact window is exposed from the passivation layer, and both the end portion of the upper electrode layer and the contact window are exposed in the opening of the photoresist layer, and a portion of the conductive material layer covering the end portion and a portion formed in the contact window are connected to each other so that the upper electrode layer and the extraction electrode are electrically connected.
4. The method for forming a semiconductor device according to claim 2, wherein the protective layer further fills the contact window when the protective layer is formed; when the light resistance layer is formed, the opening of the light resistance layer is positioned above the contact window;
and, after forming the photoresist layer, further comprising: and etching the protective layer by taking the photoresist layer as a mask, and removing the part of the protective layer filled in the contact window to expose the extraction electrode.
5. The method for forming a semiconductor device according to claim 4, wherein a portion of the conductive material layer formed in the contact window further covers an inner wall of the protective layer facing the contact window, and wherein the portion of the conductive material layer formed in the contact window is not higher than a top of the protective layer.
6. The method of claim 1, wherein the protective layer covers sidewalls of the suspended portion and does not fill a space under the suspended portion to cover a lateral opening of the space under the suspended portion.
7. The method for forming a semiconductor device according to claim 1, wherein a pressure acting on the protective layer when removing the protective layer is smaller than a pressure acting on the photoresist layer when peeling the photoresist layer.
8. A semiconductor device manufactured by the forming method according to any one of claims 1 to 7, comprising:
a substrate;
an extraction electrode formed on the substrate;
a lower electrode layer formed on the substrate;
a piezoelectric material layer formed on the substrate and covering the lower electrode layer and the extraction electrode;
an upper electrode layer formed on the piezoelectric material layer;
a passivation layer formed on the upper electrode layer and having a suspended portion extending from the upper electrode layer, the suspended portion being suspended over the piezoelectric material layer;
and a contact pad formed on the extraction electrode to be electrically connected with the upper electrode layer or the lower electrode layer through the extraction electrode.
9. The semiconductor device according to claim 8, wherein a contact window is formed in the piezoelectric material layer, a bottom of the contact window has at least a part of the extraction electrode, and the contact pad is formed in the contact window to be electrically connected to the extraction electrode.
10. The semiconductor device according to claim 9, wherein an end portion of the upper electrode layer near the contact window is exposed from the passivation layer, and the contact pad is formed in the contact window and extends to cover the end portion of the upper electrode layer so as to electrically connect the upper electrode layer and the extraction electrode.
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