CN111736388B

CN111736388B - Quantum dot color film substrate, preparation method thereof, display panel and display device

Info

Publication number: CN111736388B
Application number: CN202010677079.7A
Authority: CN
Inventors: 张卿; 曾洋; 姚绮君
Original assignee: Shanghai Tianma Microelectronics Co Ltd
Current assignee: Shanghai Tianma Microelectronics Co Ltd
Priority date: 2020-07-14
Filing date: 2020-07-14
Publication date: 2023-06-09
Anticipated expiration: 2040-07-14
Also published as: CN111736388A

Abstract

The application discloses various membrane base plate of quantum dot and preparation method, display panel and display device thereof, wherein, various membrane base plate of quantum dot includes basement, barricade layer and reflection metal layer, the barricade layer is located basement one side, and includes a plurality of barricade structures and a plurality of barricade openings, reflection metal layer covers the side of barricade structure for the reflection to the light emitting element outgoing line improves the utilization ratio of outgoing line, simultaneously reflection metal layer still is used for receiving touch signal and carries out touch detection, with touch function integration in the various membrane base plate of quantum dot, need not to realize touch function through externally hung touch panel, is favorable to reducing quantum dot display panel's rete quantity to reduce quantum dot display panel's overall thickness, satisfy the frivolous requirement of user to quantum dot display panel.

Description

Quantum dot color film substrate, preparation method thereof, display panel and display device

Technical Field

The application relates to the technical field of display, in particular to a quantum dot color film substrate, a preparation method thereof, a display panel and a display device.

Background

Quantum Dot (Quantum Dot) display is a novel display technology and has the characteristic of improving the color gamut value and contrast of a display device.

Referring to fig. 1, fig. 1 is a schematic cross-sectional structure of a quantum dot display device, which is limited by a special structure of the quantum dot display device, and most of the existing ways of integrating touch functions in the quantum dot display device are plug-in, that is, the way of bonding an integrated touch panel 3 on a quantum dot display panel 1 through an optical adhesive 2, and the side of the touch panel 3 facing away from the quantum dot display panel 1 also needs to be bonded with a cover plate 5 through another layer of optical adhesive 4 to realize protection of the touch panel 3.

The externally hung touch function integration mode ensures that the number of stacked film layers of the quantum dot display device is large, and the light and thin requirements of users on the quantum dot display device are difficult to meet.

Disclosure of Invention

In order to solve the technical problems, the application provides a quantum dot color film substrate, a preparation method thereof, a display panel and a display device, so as to realize the purpose of integrating a touch function in the quantum dot color film substrate, and facilitate reducing the number of film layers of the quantum dot display panel with the touch function, thereby reducing the overall thickness of the quantum dot display panel and meeting the light and thin requirements of users on the quantum dot display panel.

In order to achieve the technical purpose, the embodiment of the application provides the following technical scheme:

a quantum dot color film substrate, comprising:

a substrate, the substrate including a display region.

The retaining wall layer is positioned in the display area, is positioned on one side of the substrate and comprises a plurality of retaining wall structures and a plurality of retaining wall openings.

The reflecting metal layer at least covers the side face of the retaining wall structure, and the side face is the surface, close to one side of the retaining wall opening, of the retaining wall structure.

The reflective metal layer is used for receiving a touch signal to perform touch detection.

A display panel comprising the quantum dot color film substrate as described in one of the above.

The quantum dot color film substrate is characterized by further comprising a backlight substrate, wherein the backlight substrate and the quantum dot color film substrate are oppositely arranged.

A display device comprising a display panel as claimed in one of the above.

The preparation method of the quantum dot color film substrate comprises the following steps:

a substrate is provided, the substrate including a display region.

Forming a retaining wall layer, wherein the retaining wall layer is positioned on one side of the substrate; the retaining wall layer includes a plurality of retaining wall structures and a plurality of retaining wall openings.

And forming a reflective metal layer on the retaining wall layer, wherein the reflective metal layer at least covers the side surface of the retaining wall structure, and the side surface is the surface of the retaining wall structure, which is close to one side of the retaining wall opening.

It can be seen from the above technical scheme that the embodiment of the application provides a quantum dot color film substrate and a preparation method thereof, a display panel and a display device, wherein the quantum dot color film substrate comprises a substrate, a retaining wall layer and a reflective metal layer, the retaining wall layer is located on one side of the substrate and comprises a plurality of retaining wall structures and a plurality of retaining wall openings, the reflective metal layer covers the side surfaces of the retaining wall structures and is used for reflecting emergent rays of a light emitting unit, improving the utilization rate of the emergent rays, and meanwhile, the reflective metal layer is also used for receiving touch signals for touch detection, integrating a touch function in the quantum dot color film substrate, realizing the touch function without an externally hung touch panel, and being beneficial to reducing the film number of the quantum dot display panel, thereby reducing the overall thickness of the quantum dot display panel and meeting the light and thin requirements of users on the quantum dot display panel.

Drawings

In order to more clearly illustrate the embodiments of the present application or the technical solutions in the prior art, the drawings that are required to be used in the embodiments or the description of the prior art will be briefly described below, and it is obvious that the drawings in the following description are only embodiments of the present application, and that other drawings may be obtained according to the provided drawings without inventive effort to a person skilled in the art.

FIG. 1 is a schematic cross-sectional view of a prior art quantum dot display device;

FIG. 2 is a schematic top view of a substrate according to one embodiment of the present disclosure;

FIG. 3 is a schematic cross-sectional view along line AA' of FIG. 2;

fig. 4 is a schematic structural diagram of a touch electrode according to an embodiment of the present application;

fig. 5 is a schematic cross-sectional structure of a quantum dot color film substrate according to another embodiment of the present disclosure;

fig. 6 is a schematic cross-sectional structure of a quantum dot color film substrate according to another embodiment of the present disclosure;

fig. 7 is a schematic cross-sectional structure of a quantum dot color film substrate according to still another embodiment of the present disclosure;

fig. 8 is a schematic cross-sectional structure of a quantum dot color film substrate according to an alternative embodiment of the present disclosure;

fig. 9 is a schematic cross-sectional structure of a quantum dot color film substrate according to another alternative embodiment of the present disclosure;

fig. 10 is a schematic cross-sectional structure of a display panel according to an embodiment of the present disclosure;

FIG. 11 is a schematic view of an external appearance of a display device according to an embodiment of the present disclosure;

fig. 12 is a schematic flow chart of a method for preparing a quantum dot color film substrate according to an embodiment of the present application;

fig. 13 is a schematic diagram of a preparation flow of a quantum dot color film substrate according to an embodiment of the present application;

fig. 14 is a schematic flow chart of a method for manufacturing a quantum dot color film substrate according to another embodiment of the present disclosure;

fig. 15 is a schematic preparation flow diagram of a quantum dot color film substrate according to another embodiment of the present application;

fig. 16 is a flow chart of a method for manufacturing a quantum dot color film substrate according to another embodiment of the present disclosure;

fig. 17 is a schematic diagram of a preparation flow of a quantum dot color film substrate according to another embodiment of the present disclosure;

fig. 18 is a schematic flow chart of a method for manufacturing a quantum dot color film substrate according to still another embodiment of the present disclosure;

fig. 19 is a schematic preparation flow chart of a quantum dot color film substrate according to still another embodiment of the present application.

Detailed Description

The following description of the embodiments of the present application will be made clearly and fully with reference to the accompanying drawings, in which it is evident that the embodiments described are only some, but not all, of the embodiments of the present application. All other embodiments, which can be made by one of ordinary skill in the art without undue burden from the present disclosure, are within the scope of the present disclosure.

The embodiment of the application provides a quantum dot color film substrate, as shown in fig. 2 and 3, fig. 2 is a schematic top view structure of the quantum dot color film substrate, and fig. 3 is a schematic cross-sectional structure along line AA' in fig. 2, where the quantum dot color film substrate includes:

a substrate 10, the substrate 10 including a display region.

The retaining wall layer is located in the display area, the retaining wall layer is located on one side of the substrate 10, and the retaining wall layer includes a plurality of retaining wall structures 20 and a plurality of retaining wall openings.

And a reflective metal layer 30, wherein the reflective metal layer 30 covers at least a side surface of the wall structure 20, and the side surface is a surface of the wall structure 20 near the opening side of the wall.

The reflective metal layer 30 is configured to receive a touch signal for touch detection.

In general, when the light emitted by the light emitting unit is unified into blue light, the retaining wall opening is generally further configured to set a quantum dot color resistor 50, that is, still referring to fig. 3, the quantum dot color film substrate further includes a plurality of quantum dot color resistors 50, where the quantum dot color resistors 50 are located in the limiting area of the black matrix 40 and the retaining wall opening, and the retaining wall opening and the quantum dot color resistors 50 are set in a one-to-one correspondence. Specifically, the quantum dot color resistors 50 include a red color resistor, a green color resistor and a scattering color resistor, and when the blue light passes through the red color resistor, the blue light is converted into red light through the photoinduced conversion of the red color resistor and exits; when the blue light passes through the green resistor, the blue light is converted into green light through the photoinduced conversion of the green resistor and then is emitted. When the blue light passes through the scattering color resistor, the emission angle of the blue light is changed by the scattering color resistor so as to meet the emission angle requirement of the blue light.

Since the retaining wall structure 20 is disposed around the retaining wall opening, the reflective metal layer 30 at least covering the side surface of the retaining wall structure 20 can avoid light crosstalk of light rays emitted from adjacent light emitting units, and can also play a role in reflecting light rays emitted from the light emitting units, so that the light rays are prevented from being absorbed by the retaining wall structure 20 and not emitted from the retaining wall opening, and the light utilization rate is improved.

Meanwhile, referring to fig. 4 and referring to fig. 3 and 2 in combination, fig. 4 is a schematic structural diagram of the touch electrode 61, in the structure shown in fig. 4, the reflective metal layer 30 is divided into a plurality of block metals, and each block metal may be used as one touch electrode 61 (or touch pad), because when the reflective metal layer 30 is multiplexed into a touch film layer to perform touch detection, in order to realize the judgment of the position of the operating body, it is generally required that the plurality of touch electrodes 61 form a plurality of touch capacitors in a self-capacitance or mutual capacitance manner, and the greater the number of touch electrodes 61, the greater the number of touch capacitors formed correspondingly, the higher the accuracy of touch detection can be realized, and the greater the number of operating body positions (i.e. the number of multi-touch) that can be detected simultaneously.

The reflective metal layer 30 is divided into a plurality of touch electrodes 61, and generally includes a plurality of touch electrode leads 62, where the plurality of touch electrode leads 62 are connected to the plurality of touch electrodes 61 in a one-to-one correspondence manner, so as to achieve the purpose of leading out the touch electrodes 61 from the display area AA.

Referring to fig. 2, 3 and 4, the slits dividing the reflective metal layer 30 into a plurality of touch electrodes 61 and a plurality of touch electrode leads 62 are generally located on the bottom surface of the first type of wall structure 21, that is, the first metal layer 31 on the surface of the first type of wall structure 21 covers at least the side wall of the first type of wall structure 21 and exposes at least a part of the bottom surface of the first type of wall structure 21, the bottom surface of the first type of wall structure 21 is the surface of the first type of wall structure 21 facing away from the substrate 10, and the slits located on the bottom surface do not interfere with the reflective function of the reflective metal layer 30 on light, and do not interfere with the function of the reflective metal layer 30 for preventing optical crosstalk.

It is understood that the notch is that the first metal layer 31 on the surface of the first type of retaining wall structure 21 covers at least the side wall of the first type of retaining wall structure 21 and exposes at least a part of the bottom surface of the first type of retaining wall structure 21; that is, the first metal layer 31 on the surface of the first type of wall structure 21 does not completely cover the first type of wall structure.

The second metal layer 32 on the surface of the second type of wall structure 22 does not need to be notched, i.e. the second metal layer 32 covers the side wall and the bottom surface of the second type of wall structure 22, and the bottom surface of the second type of wall structure 22 is the surface of the second type of wall structure 22 facing away from the substrate 10.

In the top view structure shown in fig. 2, the second metal layers 32 on the surfaces of the adjacent second type of wall structures are connected to each other to form a massive block electrode structure as the touch electrode 61, where the slits of the first type of wall structures 22 (i.e. where the bottom surfaces of the exposed first type of wall structures 22) are located, the reflective metal layer 30 is isolated into a plurality of the touch electrodes 61, that is, fig. 4 is only a schematic connection diagram illustrating the touch electrode and the touch electrode lead, and does not represent the actual distance between the touch electrodes, and it can be understood that the distance between the different touch electrodes can be understood as the slits.

Each touch electrode 61 includes a plurality of second metal layers 32 on the surfaces of the second type wall structures 22, and the second metal layers 32 are connected to each other to form a large block of metal as one touch electrode 61, but the two touch electrodes 61 are separated by a notch on the bottom surface of the first metal layer 31.

It should be noted that, with continued reference to fig. 2 and 3, no reflective metal is disposed on the bottom surface of the first type of retaining wall structure 21 (refer to the position of the dashed line in fig. 3), the reflective metal layers on both sides of the first type of retaining wall structure are separated and multiplexed into different touch electrodes, and as shown in fig. 3 and fig. 2, the touch electrode pad1 and the touch electrode pad2 are respectively formed on both sides of the first type of retaining wall structure 21.

The bottom surface of the retaining wall structure 20 refers to the surface of the retaining wall structure 20 on the side far away from the substrate 10. The slits on the bottom surface do not interfere with the light reflection function of the reflective metal layer 30, nor do they interfere with the light crosstalk prevention function of the reflective metal layer 30.

Still referring to fig. 4, the substrate 10 shown in fig. 4 further includes: the step area BB.

The quantum dot color film substrate further comprises: a plurality of pads 70. The plurality of bonding pads 70 are connected with the plurality of touch electrode leads 62 in a one-to-one correspondence manner, and the plurality of bonding pads 70 are used for being electrically connected with the driving chip so as to realize the electrical connection between the touch electrode leads 62 and the driving chip.

In fig. 2, only one touch electrode is shown to be arranged corresponding to 9 light emitting units, i.e. one touch electrode is located in 9 light emitting units, and in fig. 4, one touch electrode is shown to surround 12 or 15 light emitting units; it should be noted that, the size of the touch electrode 61 is generally 4mm, and the size of the light emitting unit is generally 20-30 μm; optionally, the front projection of one touch electrode 61 on the substrate at least surrounds the front projection of 3600-10000 light emitting units on the substrate, that is, one touch electrode 61 is disposed corresponding to 3600-10000 light emitting units.

Based on the foregoing embodiments, in one embodiment of the present application, referring to fig. 5, fig. 5 is a schematic cross-sectional structure of the quantum dot color film substrate, and the reflective metal layer 30 further includes:

the third metal layer 33, the third metal layer 33 is located on the bottom surface of the first type retaining wall structure 21, and the bottom surface is the surface of the first type retaining wall structure 21 away from the side of the substrate 10.

In this embodiment, the reflective metal layer 30 includes, in addition to the first metal layer 32, a third metal layer 33 covering the bottom surface of the first-type wall structure 21, and the third metal layer 33 on the bottom surface may include a trace metal, where the orthographic projection of the trace metal on the substrate 10 and the orthographic projection of the first metal layer 31 on the substrate 10 do not overlap.

It should be noted that, the fact that the front projection of the trace metal on the substrate 10 and the front projection of the first metal layer 31 on the substrate 10 do not overlap each other includes two cases, that is, a certain distance is provided between the front projection of the trace metal on the substrate 10 and the front projection of the first metal layer 31 on the substrate 10, that is, the front projection of the trace metal on the substrate 10 and the front projection of the first metal layer 31 on the substrate 10 are not contacted with each other; the other is that the front projection of the trace metal on the substrate 10 is adjacent to the front projection of the first metal layer 31 on the substrate 10, i.e. the front projection of the trace metal on the substrate 10 is just in contact with the front projection of the first metal layer 31 on the substrate 10. The orthographic projection of the trace metal on the substrate 10 and the orthographic projection of the first metal layer 31 on the substrate 10 do not overlap each other, which may include both the above two cases, or may include only one of the above cases, which is not limited in this application.

The trace metal may include a plurality of the touch electrode leads, and the touch electrode leads are adjacent to the touch electrodes at this time, which is the second case described above, because the touch electrode leads need to be connected to the corresponding touch electrodes.

In another embodiment of the present application, as shown in fig. 6, fig. 6 is a schematic cross-sectional structure of the quantum dot color film substrate, where the third metal layer 33 further includes a first overlap metal 34, and an orthographic projection of the first overlap metal 34 on the substrate 10 is adjacent to an orthographic projection of the first metal layer 31 on the substrate 10; the orthographic projection of the first bonding metal 34 on the substrate 10 does not overlap with the trace metal.

In this embodiment, due to the presence of the first overlap metal 34, the first metal layer 31 may extend to the bottom surface of the first type of retaining wall structure 21 through the first overlap metal 34, and when the first metal layer 31 is used as a touch electrode, the touch electrode lead included in the routing metal may be led out by directly connecting with the first overlap metal 34, so that electrical connection between the touch electrode lead and the touch electrode is not required to be achieved through processes such as punching, thereby facilitating simplification of the preparation process.

In another embodiment of the present application, as shown in fig. 7, fig. 7 is a schematic cross-sectional structure of the quantum dot color film substrate, the first type of retaining wall structure 21 further includes a groove 23, the bottom surface of the first type of retaining wall structure 21 extends toward the inside of the first type of retaining wall structure 21 to form the groove 23, and the bottom surface is a surface of the first type of retaining wall structure 21 away from the side of the substrate 10.

In this embodiment, the grooves 23 may serve to isolate the reflective metal layer 30 into a plurality of touch electrodes, and compared with isolating the reflective metal layer 30 by a scribe line manner, isolating the reflective metal layer 30 by the grooves 23 may better ensure that the reflective metal layers 30 on both sides of the grooves 23 are not connected to each other.

In addition, in other embodiments of the present application, referring to fig. 8, fig. 8 is a schematic cross-sectional structure of the quantum dot color film substrate, other portions of the reflective metal layer 30 may be disposed in the area within the groove 23 to widen the function of the reflective metal layer 30, and specifically, the reflective metal layer 30 further includes a fourth metal layer 35, where the fourth metal layer 35 is located within the groove 23, and the front projection of the fourth metal layer 35 on the substrate 10 and the front projection of the first metal layer 31 on the substrate 10 do not overlap.

In this embodiment, the first metal layer 31 may be used as the touch electrode, or the fourth metal layer 35 located in the groove 23 may be used as the touch electrode. When the fourth metal layer 35 located in the groove 23 is used as the touch electrode, the fourth metal layer 35 also needs to be separated into a plurality of metal structures insulated from each other by a seam, and the metal structures are used as one touch electrode.

When the first metal layer 31 is multiplexed to the touch electrode, the fourth metal layer 35 located in the groove 23 may be further used to receive a fixed potential, so that the fourth metal layer 35 receiving the fixed potential provides functions such as electrostatic Discharge (ESD) or stray signal shielding for the quantum dot color film substrate. The fixed potential includes, but is not limited to, ground potential (GND), cathode Potential (PVEE) of the light emitting unit, and the like.

Similarly, when the fourth metal layer 35 located in the groove 23 is used as the touch electrode, the first metal layer 31 may also be used to receive the fixed potential, so that the first metal layer 31 may provide functions such as electrostatic discharge or stray signal shielding for the quantum dot color film substrate.

In another embodiment of the present application, as shown in fig. 9, fig. 9 is a schematic cross-sectional structure of the quantum dot color film substrate, where the quantum dot color film substrate further includes a second overlap metal 36, the second overlap metal 36 is located on the bottom surface, and an orthographic projection of the second overlap metal 36 on the substrate 10 is adjacent to an orthographic projection of the first metal layer 31 on the substrate 10.

In this embodiment, due to the presence of the second overlap metal 36, the first metal layer 31 may extend to the bottom surface of the retaining wall structure 20 through the second overlap metal 36, and when the first metal layer 31 is multiplexed into a touch electrode, the touch electrode lead may be led out by directly connecting with the second overlap metal 36, so that electrical connection between the touch electrode lead and the touch electrode is not required to be achieved through processes such as punching, which is beneficial to simplifying the preparation process.

On the basis of the above embodiment, in still another embodiment of the present application, referring to fig. 7 to 9, the opening area of the side of the groove 23 close to the substrate 10 is smaller than the opening area of the side of the groove 23 away from the substrate 10.

At this time, the cross-section of the groove 23 in the direction perpendicular to the surface of the substrate 10 is in an inverted trapezoid shape, so that the orthographic projection of the fourth metal layer 35 located in the groove 23 on the substrate 10 and the orthographic projection of the second overlap metal 36 on the substrate 10 can ensure that the fourth metal layer 35 and the second overlap metal 36 do not overlap each other, and the coupling capacitance of the fourth metal layer 35 and the second overlap metal 36 can be reduced, so that the interference of the coupling capacitance on other signals is reduced.

Correspondingly, the embodiment of the application further provides a display panel, as shown in fig. 10, fig. 10 is a schematic cross-sectional structure of the display panel, where the display panel includes: the quantum dot color film substrate 200 according to any of the embodiments described above.

In addition, the display panel further includes a backlight substrate 100, and the backlight substrate 100 is disposed opposite to the quantum dot color film substrate 200.

In general, the backlight substrate 100 includes a plurality of light emitting units 101, where the light emitting units 101 are configured to emit blue light, and in the process of photo-induced conversion of quantum dots, only short wavelength light can be converted into long wavelength light, so when red, green and blue primary light needs to be emitted finally, the backlight substrate 100 emits blue light, and after the blue light is photo-induced converted and scattered by the quantum dot color film substrate 200, red, green and blue light which are emitted finally are formed respectively.

In one embodiment of the present application, the backlight substrate 100 further includes: the driving chip is bound on the backlight substrate 100, and is electrically connected with the driving film layer on the backlight substrate 100 and electrically connected with the plurality of touch electrodes on the quantum dot color film substrate 200. In this embodiment, the driving film layer is a film layer for driving the light emitting unit on the backlight substrate 100 to emit light, and may specifically include a pixel circuit formed by a plurality of thin film transistors. The driving chip integrates the display driving function and the touch driving function at the same time, which is beneficial to reducing the area of the step area of the backlight substrate 100.

Correspondingly, the embodiment of the application further provides a display device, as shown in fig. 11, fig. 11 is a schematic structural diagram of the display device a100, where the display device a100 includes the display panel according to any of the embodiments described above.

Correspondingly, the embodiment of the application also provides a preparation method of the quantum dot color film substrate, as shown in fig. 12, fig. 12 is a schematic flow chart of the preparation method of the quantum dot color film substrate, and the preparation method of the quantum dot color film substrate comprises the following steps:

s101: a substrate is provided, the substrate including a display region.

S102: forming a retaining wall layer, wherein the retaining wall layer is positioned on one side of the substrate; the retaining wall layer includes a plurality of retaining wall structures and a plurality of retaining wall openings.

Wherein, specifically, the forming the retaining wall layer comprises: forming a plurality of first type retaining wall structures and a plurality of second type retaining wall structures;

the forming of the reflective metal layer includes:

forming a first metal layer which at least covers the side wall of the first type retaining wall structure and at least exposes part of the bottom surface of the first type retaining wall structure;

and forming a second metal layer covering the side walls and the bottom surface of the second type retaining wall structure.

S103: and forming a reflective metal layer on the retaining wall layer, wherein the reflective metal layer at least covers the side surface of the retaining wall structure, and the side surface is the surface of the retaining wall structure, which is close to one side of the retaining wall opening.

Referring to fig. 13, fig. 13 is a schematic view of a preparation flow of the quantum dot color film substrate, and in step 103, a forming process of the reflective metal layer generally includes: forming the whole metal covering the side wall and the bottom surface of the retaining wall layer, and then carrying out a patterning process on the whole metal to form the reflecting metal layer. Because the reflective metal layer is multiplexed into a touch film layer and is used for receiving touch signals and performing touch detection, the whole metal is required to be patterned into a plurality of mutually insulated block metals in the patterning process, and each block metal can be used as one touch electrode, when the reflective metal layer is multiplexed into the touch film layer to perform touch detection, in order to realize the judgment of the position of an operating body, a plurality of touch electrodes are usually required to form a plurality of touch capacitors in a self-capacitance or mutual capacitance mode, and the more the number of touch electrodes, the more the number of the touch capacitors formed is, the higher the accuracy of touch detection can be realized, and the more the number of operating body positions (namely the number of multi-point touches) can be detected simultaneously.

The reflective metal layer is divided into a plurality of touch electrodes, and generally comprises a plurality of touch electrode leads, wherein the touch electrode leads are in one-to-one correspondence with the touch electrodes, so that the purpose of leading out the touch electrodes from the display area is achieved. The plurality of touch electrode leads can be formed simultaneously with the plurality of touch electrodes in the patterning process, so that the number of working procedures is reduced, and the preparation efficiency is improved.

In fig. 13, reference numeral 10 denotes the substrate, 20 denotes the wall structures, 21 denotes the first type wall structures, 22 denotes the second type wall structures, 30 denotes the reflective metal layer, 31 denotes the first metal layer, 32 denotes the second metal layer, 40 denotes a black matrix, and 50 denotes a quantum dot color resistance.

Based on the foregoing embodiments, in one embodiment of the present application, as shown in fig. 14, fig. 14 is a schematic flow chart of a method for preparing a quantum dot color film substrate, where the method for preparing a quantum dot color film substrate further includes:

s104: and forming a third metal layer positioned on the bottom surface of the first-type retaining wall structure, wherein the bottom surface is the surface of the first-type retaining wall structure, which is far away from the substrate side.

Wherein, the third metal layer and the reflection metal layer are formed by the same process.

In this embodiment, the preparation flow of the quantum dot color film substrate is shown in fig. 15. In fig. 15, reference numeral 31 denotes the first metal layer, and 33 denotes the third metal layer.

In this embodiment, the preparation of the third metal layer and the formation of the reflective metal layer by the same process means that after the formation of the whole metal covering the sidewall and the bottom of the retaining wall structure, the third metal layer and the reflective metal layer are formed in the same patterning process, which is beneficial to simplifying the preparation process.

Based on the foregoing embodiment, in another embodiment of the present application, as shown in fig. 16, fig. 16 is a schematic flow chart of a preparation method of the quantum dot color film substrate, and before forming the reflective metal layer, the method further includes:

s1023: and forming a groove, wherein the bottom surface of the first type retaining wall structure extends towards the inside of the first type retaining wall structure to form the groove, and the bottom surface is the surface of one side of the first type retaining wall structure away from the substrate.

The preparation flow of the quantum dot color film substrate in this embodiment is shown in fig. 17. The grooves may be formed by an etching process such as photolithography.

Referring to fig. 17, the opening area of the side of the groove close to the substrate is smaller than the opening area of the side of the groove away from the substrate. I.e. the cross-sectional shape of the recess in a direction perpendicular to the surface of the substrate is inverted trapezoidal.

Based on the above embodiment, in yet another embodiment of the present application, as shown in fig. 18, fig. 18 is a schematic flow chart of a method for preparing a quantum dot color film substrate, where the method for preparing a quantum dot color film substrate further includes:

s105: and forming a fourth metal layer, wherein the fourth metal layer is positioned in the groove, and the orthographic projection of the fourth metal layer on the substrate is not overlapped with the orthographic projection of the first metal layer on the substrate.

The fourth metal layer is formed by the same process as the first metal layer.

Referring to fig. 19, fig. 19 is a schematic diagram of a preparation flow of the quantum dot color film substrate. In fig. 19, reference numeral 23 denotes the groove. Reference numeral 35 denotes the fourth metal layer.

In this embodiment, the first metal layer may be multiplexed to be the touch electrode, or the fourth metal layer located in the groove may be used as the touch electrode. When the fourth metal layer located in the groove is used as the touch electrode, the fourth metal layer is also required to be isolated into a plurality of metal structures insulated from each other by a seam, and the metal structures are used as one touch electrode.

When the first metal layer is multiplexed to the touch electrode, the fourth metal layer located in the groove may be further used to receive a fixed potential, so that the fourth metal layer receiving the fixed potential provides functions such as electrostatic Discharge (ESD) or stray signal shielding for the quantum dot color film substrate. The fixed potential includes, but is not limited to, ground potential (GND), cathode Potential (PVEE) of the light emitting unit, and the like.

Similarly, when the fourth metal layer located in the groove is used as the touch electrode, the first metal layer may also be used to receive the fixed potential, so that the first metal layer may provide functions such as electrostatic discharge or stray signal shielding for the quantum dot color film substrate.

Still referring to fig. 19, the open area of the side of the recess near the base is smaller than the open area of the side of the recess away from the base. At this time, the cross section of the groove in the direction perpendicular to the surface of the substrate is in an inverted trapezoid shape, so that orthographic projection of the fourth metal layer in the groove on the substrate and orthographic projection of the second overlap metal on the substrate can ensure that the fourth metal layer and the second overlap metal do not overlap each other, coupling capacitance of the fourth metal layer and the second overlap metal can be reduced, and interference of the coupling capacitance on other signals is reduced.

In summary, the embodiment of the application provides a quantum dot color film substrate, a preparation method thereof, a display panel and a display device, wherein the quantum dot color film substrate comprises a substrate, a retaining wall layer and a reflective metal layer, the retaining wall layer is located on one side of the substrate and comprises a plurality of retaining wall structures and a plurality of retaining wall openings, the reflective metal layer covers the side surfaces of the retaining wall structures and is used for reflecting light rays emitted by a light emitting unit, the utilization rate of the light rays is improved, meanwhile, the reflective metal layer is also used for receiving touch signals to perform touch detection, a touch function is integrated in the quantum dot color film substrate, the touch function is not required to be realized through an externally hung touch panel, the film number of the quantum dot display panel is reduced, the overall thickness of the quantum dot display panel is reduced, and the light and thin requirements of users on the quantum dot display panel are met.

Features described in the embodiments of the present disclosure may be replaced or combined with each other, and each embodiment is mainly described in the differences from the other embodiments, and the same or similar parts between the embodiments are referred to each other.

The previous description of the disclosed embodiments is provided to enable any person skilled in the art to make or use the present application. Various modifications to these embodiments will be readily apparent to those skilled in the art, and the generic principles defined herein may be applied to other embodiments without departing from the spirit or scope of the application. Thus, the present application is not intended to be limited to the embodiments shown herein but is to be accorded the widest scope consistent with the principles and novel features disclosed herein.

Claims

1. The utility model provides a quantum dot color film base plate which characterized in that includes:

a substrate including a display region;

the retaining wall layer is positioned in the display area and positioned on one side of the substrate, and comprises a plurality of retaining wall structures and a plurality of retaining wall openings;

the reflecting metal layer at least covers the side face of the retaining wall structure, and the side face is the surface of the retaining wall structure, which is close to one side of the retaining wall opening;

the reflective metal layer is used for receiving a touch signal to perform touch detection;

the plurality of retaining wall structures comprises a plurality of retaining wall structures of a first type and a plurality of retaining wall structures of a second type;

the reflective metal layer comprises a first metal layer and a second metal layer; the reflective metal layer is provided with a notch, and the notch is positioned on the bottom surface of the first type retaining wall structure and divides the reflective metal layer into a plurality of touch electrodes;

the first metal layer at least covers the side wall of the first type retaining wall structure and at least exposes part of the bottom surface of the first type retaining wall structure, and the bottom surface of the first type retaining wall structure is the surface of the first type retaining wall structure, which is away from one side of the substrate;

the second metal layer covers the side wall and the bottom surface of the second type of retaining wall structure, and the bottom surface of the second type of retaining wall structure is the surface of the second type of retaining wall structure, which is away from one side of the substrate.

2. The quantum dot color film substrate according to claim 1, wherein the reflective metal layer comprises a plurality of touch electrodes and touch electrode leads;

the touch electrode leads are connected with the touch electrodes in a one-to-one correspondence manner.

3. The quantum dot color film substrate of claim 1, wherein the reflective metal layer further comprises:

and the third metal layer is positioned on the bottom surface of the first retaining wall structure.

4. The quantum dot color film substrate according to claim 3, wherein,

the third metal layer comprises a wiring metal, the orthographic projection of the wiring metal on the substrate and the orthographic projection of the first metal layer on the substrate are not overlapped, and a certain interval is formed between the orthographic projection of the wiring metal on the substrate and the orthographic projection of the first metal layer on the substrate.

5. The quantum dot color film substrate of claim 4, wherein the third metal layer further comprises a first overlap metal, the orthographic projection of the first overlap metal on the substrate being adjacent to the orthographic projection of the first metal layer on the substrate; the first overlap metal is not overlapped with the routing metal in the front projection of the substrate, and a certain interval is formed between the front projection of the first overlap metal on the substrate and the front projection of the routing metal on the substrate.

6. The quantum dot color film substrate according to claim 1, wherein the first type of retaining wall structure further comprises a groove, and the bottom of the first type of retaining wall structure extends toward the inside of the first type of retaining wall structure to form the groove.

7. The quantum dot color film substrate of claim 6, wherein the reflective metal layer further comprises a fourth metal layer, the fourth metal layer being located within the recess, the orthographic projection of the fourth metal layer on the substrate and the orthographic projection of the first metal layer on the substrate not overlapping, the fourth metal layer having a spacing between the orthographic projection of the substrate and the orthographic projection of the first metal layer on the substrate.

8. The quantum dot color film substrate of claim 7, further comprising a second overlap metal, the second overlap metal being located on a bottom surface of the first type of retaining wall structure.

9. The quantum dot color film substrate according to claim 6, wherein an opening area of the groove on a side close to the substrate is smaller than an opening area of the groove on a side far from the substrate.

10. The quantum dot color film substrate according to claim 1, wherein,

the quantum dot color film substrate further comprises a plurality of quantum dot color resistors, wherein the quantum dot color resistors are located in the retaining wall openings, and the retaining wall openings and the quantum dot color resistors are arranged in one-to-one correspondence.

11. A display panel comprising the quantum dot color film substrate of any one of claims 1-10;

12. A display device comprising the display panel according to claim 11.

13. A method for preparing a quantum dot color film substrate according to any one of claims 1 to 10, wherein the method for preparing the quantum dot color film substrate comprises:

providing a substrate, wherein the substrate comprises a display area;

forming a retaining wall layer, wherein the retaining wall layer is positioned on one side of the substrate; the retaining wall layer comprises a plurality of retaining wall structures and a plurality of retaining wall openings;

forming a reflecting metal layer, wherein the reflecting metal layer is formed on the retaining wall layer, the reflecting metal layer at least covers the side face of the retaining wall structure, and the side face is the surface, close to one side of the retaining wall opening, of the retaining wall structure;

the forming of the retaining wall layer includes: forming a plurality of first type retaining wall structures and a plurality of second type retaining wall structures;

the forming of the reflective metal layer includes:

forming a second metal layer covering the side wall and the bottom surface of the second type retaining wall structure; the reflective metal layer is provided with a notch, and the notch is positioned on the bottom surface of the first type retaining wall structure and divides the reflective metal layer into a plurality of touch electrodes.

14. The method of manufacturing according to claim 13, further comprising:

forming a third metal layer positioned on the bottom surface of the first-type retaining wall structure, wherein the bottom surface is the surface of the first-type retaining wall structure, which is far away from the substrate;

wherein the third metal layer and the first metal layer are prepared by the same process.

15. The method of manufacturing according to claim 13, wherein the forming the reflective metal layer further comprises:

and forming a groove, wherein the bottom of the first type retaining wall structure extends towards the inside of the first type retaining wall structure to form the groove.

16. The method of claim 15, further comprising forming a fourth metal layer within the recess, the fourth metal layer having a front projection on the substrate that does not overlap with the front projection of the first metal layer on the substrate, the fourth metal layer having a spacing between the front projection of the substrate and the front projection of the first metal layer on the substrate;

the fourth metal layer and the first metal layer are prepared by adopting the same process.