CN111736388A

CN111736388A - Quantum dot color film substrate and preparation method thereof, display panel and display device

Info

Publication number: CN111736388A
Application number: CN202010677079.7A
Authority: CN
Inventors: 张卿; 曾洋; 姚绮君
Original assignee: Shanghai Tianma Microelectronics Co Ltd
Current assignee: Shanghai Tianma Microelectronics Co Ltd
Priority date: 2020-07-14
Filing date: 2020-07-14
Publication date: 2020-10-02
Anticipated expiration: 2040-07-14
Also published as: CN111736388B

Abstract

The application discloses quantum dot color film substrate and preparation method, display panel and display device thereof, wherein, quantum dot color film substrate includes basement, retaining wall layer and reflection metal layer, the retaining wall layer is located basement one side, and includes a plurality of barricade structures and a plurality of barricade openings, the reflection metal layer covers the side of barricade structure for to the reflection of luminescence unit outgoing light, improve outgoing light's utilization ratio, simultaneously the reflection metal layer still is used for receiving touch-control signal and carries out touch-control detection, with touch-control function integration in quantum dot color film substrate, need not to realize touch-control function through external touch panel, be favorable to reducing quantum dot display panel's rete quantity, thereby reduce quantum dot display panel's whole thickness, satisfy user's frivolous requirement to quantum dot display panel.

Description

Quantum dot color film substrate and preparation method thereof, display panel and display device

Technical Field

The application relates to the technical field of display, in particular to a quantum dot color film substrate, a preparation method thereof, a display panel and a display device.

Background

Quantum Dot (Quantum Dot) display is a novel display technology, and has the characteristic of improving the color gamut value and the contrast of a display device.

Referring to fig. 1, fig. 1 is a schematic cross-sectional structure diagram of a quantum dot display device, limited by a special structure of the quantum dot display device, and most of the current methods for integrating touch functions in the quantum dot display device are externally hung, that is, a method for adhering an integrated touch panel 3 on a quantum dot display panel 1 through an optical adhesive 2, and a side of the touch panel 3 away from the quantum dot display panel 1 needs to adhere a cover plate 5 through another layer of optical adhesive 4 to protect the touch panel 3.

The external hanging type touch function integration mode enables the number of film layers of the quantum dot display device to be large, and the light and thin requirements of a user on the quantum dot display device are difficult to meet.

Disclosure of Invention

In order to solve the technical problems, the application provides a quantum dot color film substrate, a manufacturing method thereof, a display panel and a display device, so as to achieve the purpose of integrating a touch function in the quantum dot color film substrate, and be beneficial to reducing the number of film layers of the quantum dot display panel with the touch function, thereby reducing the overall thickness of the quantum dot display panel and meeting the light and thin requirements of a user on the quantum dot display panel.

In order to achieve the technical purpose, the embodiment of the application provides the following technical scheme:

a quantum dot color film substrate, comprising:

a substrate including a display area.

And the retaining wall layer is positioned on one side of the substrate and comprises a plurality of retaining wall structures and a plurality of retaining wall openings.

The reflection metal layer, the reflection metal layer covers at least retaining wall structure's side, the side does retaining wall structure is close to the surface of retaining wall opening one side.

The reflection metal layer is used for receiving a touch signal to perform touch detection.

A display panel comprises the quantum dot color film substrate.

The quantum dot color film substrate is arranged opposite to the quantum dot color film substrate.

A display device comprising a display panel as claimed in one of the above claims.

A preparation method of a quantum dot color film substrate comprises the following steps:

a substrate is provided, the substrate including a display area.

Forming a retaining wall layer, wherein the retaining wall layer is positioned on one side of the substrate; the retaining wall layer comprises a plurality of retaining wall structures and a plurality of retaining wall openings.

And forming a reflection metal layer, wherein the retaining wall layer forms the reflection metal layer, the reflection metal layer at least covers the side surface of the retaining wall structure, and the side surface is close to the surface of one side of the retaining wall opening.

It can be seen from the foregoing technical solutions that the embodiments of the present application provide a quantum dot color film substrate, a manufacturing method thereof, a display panel and a display device, wherein the quantum dot color film substrate comprises a substrate, a baffle wall layer and a reflective metal layer, the baffle wall layer is positioned on one side of the substrate, and comprises a plurality of retaining wall structures and a plurality of retaining wall openings, the reflecting metal layer covers the side surfaces of the retaining wall structures, the reflective metal layer is used for reflecting the emergent light of the light-emitting unit and improving the utilization rate of the emergent light, and meanwhile, the reflective metal layer is also used for receiving a touch signal to perform touch detection, so that the touch function is integrated in the quantum dot color film substrate, the touch function is not required to be realized through an externally-hung touch panel, the number of film layers of the quantum dot display panel is favorably reduced, therefore, the overall thickness of the quantum dot display panel is reduced, and the light and thin requirements of a user on the quantum dot display panel are met.

Drawings

In order to more clearly illustrate the embodiments of the present application or the technical solutions in the prior art, the drawings needed to be used in the description of the embodiments or the prior art will be briefly introduced below, it is obvious that the drawings in the following description are only embodiments of the present application, and for those skilled in the art, other drawings can be obtained according to the provided drawings without creative efforts.

FIG. 1 is a schematic cross-sectional view of a prior art quantum dot display device;

FIG. 2 is a schematic top view of a substrate according to an embodiment of the present disclosure;

FIG. 3 is a schematic cross-sectional view taken along line AA' of FIG. 2;

fig. 4 is a schematic structural diagram of a touch electrode according to an embodiment of the present disclosure;

fig. 5 is a schematic cross-sectional structure view of a quantum dot color film substrate according to another embodiment of the present disclosure;

fig. 6 is a schematic cross-sectional structure view of a quantum dot color film substrate according to yet another embodiment of the present disclosure;

fig. 7 is a schematic cross-sectional structure view of a quantum dot color film substrate according to yet another embodiment of the present application;

fig. 8 is a schematic cross-sectional structure view of a quantum dot color film substrate according to an alternative embodiment of the present application;

fig. 9 is a schematic cross-sectional structure view of a quantum dot color film substrate according to another alternative embodiment of the present application;

fig. 10 is a schematic cross-sectional view illustrating a display panel according to an embodiment of the present disclosure;

fig. 11 is an external view of a display device according to an embodiment of the present application;

fig. 12 is a schematic flowchart of a method for manufacturing a quantum dot color film substrate according to an embodiment of the present disclosure;

fig. 13 is a schematic flow chart illustrating a process of manufacturing a quantum dot color film substrate according to an embodiment of the present disclosure;

fig. 14 is a schematic flow chart illustrating a method for manufacturing a quantum dot color film substrate according to another embodiment of the present disclosure;

fig. 15 is a schematic flow chart illustrating a process of manufacturing a quantum dot color film substrate according to another embodiment of the present disclosure;

fig. 16 is a schematic flowchart of a method for manufacturing a quantum dot color film substrate according to yet another embodiment of the present disclosure;

fig. 17 is a schematic flow chart illustrating a manufacturing process of a quantum dot color film substrate according to another embodiment of the present disclosure;

fig. 18 is a schematic flowchart of a method for manufacturing a quantum dot color film substrate according to yet another embodiment of the present application;

fig. 19 is a schematic flow chart illustrating a manufacturing process of a quantum dot color film substrate according to still another embodiment of the present disclosure.

Detailed Description

The technical solutions in the embodiments of the present application will be clearly and completely described below with reference to the drawings in the embodiments of the present application, and it is obvious that the described embodiments are only a part of the embodiments of the present application, and not all of the embodiments. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present application.

An embodiment of the present application provides a quantum dot color film substrate, as shown in fig. 2 and 3, fig. 2 is a schematic top-view structure diagram of the quantum dot color film substrate, and fig. 3 is a schematic cross-sectional structure diagram along line AA' in fig. 2, where the quantum dot color film substrate includes:

a substrate 10, said substrate 10 comprising a display area.

And the retaining wall layer is positioned on one side of the substrate 10 and comprises a plurality of retaining wall structures 20 and a plurality of retaining wall openings.

A reflective metal layer 30, the reflective metal layer 30 covers at least the side of the retaining wall structure 20, and the side is the surface of the retaining wall structure 20 near the retaining wall opening side.

The reflective metal layer 30 is used for receiving a touch signal to perform touch detection.

Under normal circumstances, the barricade opening is used for supplying the emergent light of luminescence unit to pass through, when the emergent light of luminescence unit is unified to blue light, still be used for setting up quantum dot color resistance 50 in the barricade opening usually, still refer to fig. 3 promptly, quantum dot color filter substrate still includes a plurality of quantum dot color resistance 50, quantum dot color resistance 50 is located the limited region of black matrix 40 and in the barricade opening, just the barricade opening with quantum dot color resistance 50 one-to-one sets up. Specifically, the quantum dot color resistor 50 includes a red color resistor, a green color resistor, and a scattering color resistor, and when blue light passes through the red color resistor, the blue light is photo-converted into red light by the red color resistor and is emitted; when the blue light passes through the green color resistance, the blue light is photo-converted into the green light through the green color resistance and then is emitted. When the blue light passes through the scattering color resistance, the exit angle of the blue light is changed by the scattering color resistance so as to meet the exit angle requirement of the blue light.

Because retaining wall structure 20 centers on the retaining wall opening sets up, this makes and covers at least the reflection metal layer 30 of retaining wall structure 20 side can avoid the optical crosstalk of the light of adjacent luminescence unit outgoing, also can play the reflex action to the light of luminescence unit outgoing, avoids these light to be absorbed by retaining wall structure 20 and can't follow the condition of outgoing in the retaining wall opening, has improved light utilization ratio.

Meanwhile, referring to fig. 4 in combination with fig. 3 and fig. 2, fig. 4 is a schematic structural diagram of the touch electrode 61, in the structure shown in fig. 4, the reflective metal layer 30 is divided into a plurality of bulk metals, each bulk metal can be used as one touch electrode 61 (or referred to as a touch pad), because when the reflective metal layer 30 is reused as a touch film layer for touch detection, in order to determine the position of an operator, a plurality of touch electrodes 61 are usually required to form a plurality of touch capacitors in a self-capacitance or mutual capacitance manner, the larger the number of touch electrodes 61, the larger the number of touch capacitors formed, the higher the accuracy of touch detection can be achieved, and the larger the number of operator positions (i.e., the number of multi-touch) can be detected simultaneously.

The reflective metal layer 30 is generally divided into a plurality of touch electrodes 61, and further includes a plurality of touch electrode leads 62, the touch electrode leads 62 are connected to the touch electrodes 61 in a one-to-one correspondence manner, so as to lead the touch electrodes 61 out of the display area AA.

Referring to fig. 2, fig. 3 and fig. 4, the notches of the reflective metal layer 30 divided into the plurality of touch electrodes 61 and the plurality of touch electrode leads 62 are usually located on the bottom surface of the first-type retaining wall structure 21, that is, the first metal layer 31 on the surface of the first-type retaining wall structure 21 at least covers the sidewalls of the first-type retaining wall structure 21, and at least exposes a part of the bottom surface of the first-type retaining wall structure 21, the bottom surface of the first-type retaining wall structure 21 is the surface of the first-type retaining wall structure 21 deviating from the substrate 10, and the notches located on the bottom surface do not interfere with the reflective function of the reflective metal layer 30 on the light, and do not interfere with the function of the reflective metal layer 30 on preventing the optical.

It should be understood that the term "seam" means that the first metal layer 31 on the surface of the first-type retaining wall structure 21 at least covers the sidewalls of the first-type retaining wall structure 21 and at least exposes a portion of the bottom surface of the first-type retaining wall structure 21; that is, the first metal layer 31 on the surface of the first-type retaining wall structure 21 does not completely cover the first-type retaining wall structure.

The second metal layer 32 on the surface of the second retaining wall structure 22 does not need to be etched, that is, the second metal layer 32 covers the side wall and the bottom surface of the second retaining wall structure 22, and the bottom surface of the second retaining wall structure 22 is the surface of the second retaining wall structure 22 deviating from the substrate 10.

In the top view structure shown in fig. 2, the second metal layers 32 on the surfaces of the second-type retaining wall structures adjacent to each other are connected to form a massive block-shaped electrode structure as the touch electrode 61, and the position of the seam of the first-type retaining wall structure 22 (i.e., the position of the bottom surface of the exposed first-type retaining wall structure 22) separates the reflective metal layer 30 into a plurality of touch electrodes 61, that is, it should be noted that fig. 4 is only a schematic diagram illustrating the connection between the touch electrodes and the leads of the touch electrodes, and does not represent the actual distance between the touch electrodes, i.e., it can be understood that the distance between different touch electrodes can be understood as the seam.

Each touch electrode 61 includes a plurality of second metal layers 32 on the surface of the second-type retaining wall structure 22, the second metal layers 32 are connected to each other to form a bulk metal as a touch electrode 61, but the two touch electrodes 61 are separated by the slits on the bottom surface of the first metal layer 31.

It should be noted that, with reference to fig. 2 and fig. 3, no reflective metal is disposed on the bottom surface of the first-type retaining wall structure 21 (refer to the dashed line position in fig. 3), the reflective metal layers on both sides of the first-type retaining wall structure are separated and reused as different touch electrodes, as shown in fig. 3, touch electrodes pad1 and touch electrodes pad2 are respectively formed on both sides of the first-type retaining wall structure 21.

The bottom surface of the retaining wall structure 20 refers to a side surface of the retaining wall structure 20 away from the substrate 10. The slits on the bottom surface do not interfere with the light reflection function of the reflective metal layer 30, nor do they interfere with the light crosstalk prevention function of the reflective metal layer 30.

Still referring to fig. 4, the substrate 10 shown in fig. 4 further includes: and a step area BB.

The quantum dot color film substrate further comprises: a plurality of pads 70. The plurality of bonding pads 70 are connected with the plurality of touch electrode leads 62 in a one-to-one correspondence manner, and the plurality of bonding pads 70 are used for being electrically connected with a driving chip, so that the touch electrode leads 62 are electrically connected with the driving chip.

Fig. 2 shows that only one touch electrode is disposed corresponding to 9 light-emitting units, that is, one touch electrode is located in 9 light-emitting units, and fig. 4 shows that one touch electrode surrounds 12 or 15 light-emitting units; it should be noted that the size of the touch electrode 61 is generally 4mm, and the size of the light emitting unit is generally 20-30 μm; optionally, the orthographic projection of one touch electrode 61 on the substrate at least surrounds the orthographic projection of the 3600-10000 light-emitting unit on the substrate, that is, one touch electrode 61 is arranged corresponding to the light-emitting unit of 3600-10000.

On the basis of the foregoing embodiment, in an embodiment of the present application, referring to fig. 5, fig. 5 is a schematic cross-sectional structure diagram of the quantum dot color filter substrate, where the reflective metal layer 30 further includes:

a third metal layer 33, where the third metal layer 33 is located on the bottom surface of the first-type retaining wall structure 21, and the bottom surface is the surface of the first-type retaining wall structure 21 away from the substrate 10.

In this embodiment, the reflective metal layer 30 further includes a third metal layer 33 covering the bottom surface of the first-type retaining wall structure 21 in addition to the first metal layer 32, and the third metal layer 33 on the bottom surface may include a trace metal, and an orthogonal projection of the trace metal on the substrate 10 and an orthogonal projection of the first metal layer 31 on the substrate 10 are not overlapped with each other.

It should be noted that the orthographic projection of the trace metal on the substrate 10 and the orthographic projection of the first metal layer 31 on the substrate 10 do not overlap with each other, and one is that a certain distance is provided between the orthographic projection of the trace metal on the substrate 10 and the orthographic projection of the first metal layer 31 on the substrate 10, that is, the orthographic projection of the trace metal on the substrate 10 and the orthographic projection of the first metal layer 31 on the substrate 10 are not in contact with each other; the other is that the orthographic projection of the trace metal on the substrate 10 is adjacent to the orthographic projection of the first metal layer 31 on the substrate 10, that is, the orthographic projection of the trace metal on the substrate 10 is just in contact with the orthographic projection of the first metal layer 31 on the substrate 10. The orthogonal projection of the trace metal on the substrate 10 and the orthogonal projection of the first metal layer 31 on the substrate 10 are not overlapped with each other, which may include both of the above two cases, or may include only one of the above cases, and the present application does not limit this.

The trace metal may include a plurality of the touch electrode leads, and since the touch electrode leads need to be connected to the corresponding touch electrodes, the touch electrode leads are adjacent to the touch electrodes, which is the second case described above.

On the basis of the foregoing embodiment, in another embodiment of the present application, as shown in fig. 6, fig. 6 is a schematic cross-sectional structure diagram of the quantum dot color filter substrate, where the third metal layer 33 further includes a first bridging metal 34, and an orthogonal projection of the first bridging metal 34 on the substrate 10 is adjacent to an orthogonal projection of the first metal layer 31 on the substrate 10; the first bridging metal 34 does not overlap with the trace metal in the orthographic projection of the substrate 10.

In this embodiment, due to the existence of the first overlapping metal 34, the first metal layer 31 may extend to the bottom surface of the first-type retaining wall structure 21 through the first overlapping metal 34, when the first metal layer 31 is used as a touch electrode, the touch electrode lead included in the routing metal may be led out in a manner of being directly connected to the first overlapping metal 34, and the touch electrode lead and the touch electrode are electrically connected without processes such as punching, which is beneficial to simplifying the manufacturing process.

On the basis of the foregoing embodiment, in another embodiment of the present application, as shown in fig. 7, fig. 7 is a schematic cross-sectional structure diagram of a quantum dot color film substrate, the first-type retaining wall structure 21 further includes a groove 23, a bottom surface of the first-type retaining wall structure 21 extends into the first-type retaining wall structure 21 to form the groove 23, and the bottom surface is a surface of the first-type retaining wall structure 21 away from the substrate 10.

In this embodiment, the groove 23 may serve to isolate the reflective metal layer 30 into a plurality of touch electrodes, and compared with isolating the reflective metal layer 30 in a slit manner, isolating the reflective metal layer 30 in the groove 23 may better ensure that the reflective metal layers 30 on two sides of the groove 23 are not connected to each other.

In addition, in other embodiments of the present application, referring to fig. 8, fig. 8 is a schematic cross-sectional structure diagram of the quantum dot color filter substrate, and an area in the groove 23 may further be provided with other portions of the reflective metal layer 30 to widen a function of the reflective metal layer 30, specifically, the reflective metal layer 30 further includes a fourth metal layer 35, the fourth metal layer 35 is located in the groove 23, and an orthographic projection of the fourth metal layer 35 on the substrate 10 is not overlapped with an orthographic projection of the first metal layer 31 on the substrate 10.

In this embodiment, the first metal layer 31 may be reused as the touch electrode, or the fourth metal layer 35 located in the groove 23 may be used as the touch electrode. When the fourth metal layer 35 located in the groove 23 is used as the touch electrode, the fourth metal layer 35 also needs to be separated into a plurality of metal structures insulated from each other by means of slits and the like, and the metal structures are used as one touch electrode.

When the first metal layer 31 is reused as the touch electrode, the fourth metal layer 35 located in the groove 23 may also be used to receive a fixed potential, so that the fourth metal layer 35 receiving the fixed potential provides functions of electrostatic Discharge (ESD) or stray signal shielding for the quantum dot color film substrate. The fixed potential includes, but is not limited to, a ground potential (GND), a cathode Potential (PVEE) of the light emitting cell, and the like.

Similarly, when the fourth metal layer 35 located in the groove 23 is used as the touch electrode, the first metal layer 31 may also be configured to receive the fixed potential, so that the first metal layer 31 may provide functions of electrostatic discharge or stray signal shielding for the quantum dot color filter substrate.

On the basis of the foregoing embodiment, in another embodiment of the present application, as shown in fig. 9, fig. 9 is a schematic cross-sectional structure diagram of the quantum dot color filter substrate, where the quantum dot color filter substrate further includes a second overlapping metal 36, the second overlapping metal 36 is located on the bottom surface, and an orthogonal projection of the second overlapping metal 36 on the substrate 10 is adjacent to an orthogonal projection of the first metal layer 31 on the substrate 10.

In this embodiment, due to the existence of the second overlapping metal 36, the first metal layer 31 may extend to the bottom surface of the retaining wall structure 20 through the second overlapping metal 36, and when the first metal layer 31 is reused as a touch electrode, the touch electrode lead may be led out in a manner of being directly connected with the second overlapping metal 36, and the touch electrode lead and the touch electrode are electrically connected without processes such as punching, which is beneficial to simplifying the manufacturing process.

In a further embodiment of the present application, still referring to fig. 7-9, based on the above-mentioned embodiment, the opening area of the side of the groove 23 close to the substrate 10 is smaller than the opening area of the side of the groove 23 away from the substrate 10.

At this time, the cross-sectional shape of the groove 23 in the direction perpendicular to the surface of the substrate 10 is an inverted trapezoid, so that the orthographic projection of the fourth metal layer 35 located in the groove 23 on the substrate 10 and the orthographic projection of the second bridging metal 36 on the substrate 10 can be guaranteed not to overlap with each other, the coupling capacitance between the fourth metal layer 35 and the second bridging metal 36 can be reduced, and the interference of the coupling capacitance on other signals can be reduced.

Correspondingly, an embodiment of the present application further provides a display panel, as shown in fig. 10, fig. 10 is a schematic cross-sectional structure diagram of the display panel, where the display panel includes: the quantum dot color film substrate 200 according to any of the embodiments above.

In addition, the display panel further includes a backlight substrate 100, and the backlight substrate 100 is disposed opposite to the quantum dot color film substrate 200.

In general, the backlight substrate 100 includes a plurality of light emitting units 101, and the light emitting units 101 are configured to emit blue light, because only short-wavelength light can be converted to long-wavelength light in the light-induced conversion process of the quantum dots, so that when light of three primary colors, red, green, and blue, needs to be finally emitted, the backlight substrate 100 emits blue light, and the blue light is subjected to light-induced conversion and scattering by the quantum dot color film substrate 200 to form finally emitted red, green, and blue light, respectively.

In an embodiment of the present application, the backlight substrate 100 further includes: and the driving chip is bound on the backlight substrate 100, and the driving chip is electrically connected with the driving film layer on the backlight substrate 100 and electrically connected with the plurality of touch electrodes on the quantum dot color film substrate 200. In this embodiment, the driving film layer is a film layer for driving the light emitting unit on the backlight substrate 100 to emit light, and may specifically include a pixel circuit composed of a plurality of thin film transistors and other structures. The driving chip integrates a display driving function and a touch driving function at the same time, which is beneficial to reducing the area of the step area of the backlight substrate 100.

Correspondingly, an embodiment of the present application further provides a display device, as shown in fig. 11, fig. 11 is a schematic structural diagram of the display device a100, and the display device a100 includes the display panel according to any of the embodiments.

Correspondingly, an embodiment of the present application further provides a method for manufacturing a quantum dot color filter substrate, as shown in fig. 12, fig. 12 is a schematic flow chart of the method for manufacturing a quantum dot color filter substrate, where the method for manufacturing a quantum dot color filter substrate includes:

s101: a substrate is provided, the substrate including a display area.

S102: forming a retaining wall layer, wherein the retaining wall layer is positioned on one side of the substrate; the retaining wall layer comprises a plurality of retaining wall structures and a plurality of retaining wall openings.

Wherein, specifically, form retaining wall layer includes: forming a plurality of first retaining wall structures and a plurality of second retaining wall structures;

the forming a reflective metal layer includes:

forming a first metal layer at least covering the side wall of the first retaining wall structure and at least exposing partial bottom surface of the first retaining wall structure;

and forming a second metal layer covering the side wall and the bottom surface of the second retaining wall structure.

S103: and forming a reflection metal layer, wherein the retaining wall layer forms the reflection metal layer, the reflection metal layer at least covers the side surface of the retaining wall structure, and the side surface is close to the surface of one side of the retaining wall opening.

Referring to fig. 13, fig. 13 is a schematic view of a process for manufacturing the quantum dot color filter substrate, in step 103, a process of forming the reflective metal layer generally includes: and forming whole metal covering the side wall and the bottom surface of the retaining wall layer, and then carrying out patterning process on the whole metal to form the reflecting metal layer. Because the reflective metal layer is reused as a touch film layer for receiving a touch signal and performing touch detection, the entire metal needs to be patterned into a plurality of block metals insulated from each other in the patterning process, and each block metal can be used as a touch electrode, because when the reflective metal layer is reused as the touch film layer for touch detection, in order to realize the determination of the position of an operator, a plurality of touch electrodes are usually required to form a plurality of touch capacitors in a self-capacitance or mutual capacitance manner, and the larger the number of touch electrodes, the larger the number of touch capacitors formed, the higher the accuracy of touch detection can be realized, and the larger the number of positions of the operator (i.e., the number of multi-point touches) that can be detected simultaneously can be realized.

The reflective metal layer is generally divided into a plurality of touch electrodes, and also comprises a plurality of touch electrode leads, and the plurality of touch electrode leads are connected with the plurality of touch electrodes in a one-to-one correspondence manner, so that the purpose of leading the touch electrodes out of the display area is realized. The plurality of touch electrode leads can be simultaneously formed with the plurality of touch electrodes in the patterning process, so that the number of processes is reduced, and the preparation efficiency is improved.

In fig. 13, reference numeral 10 denotes the substrate, 20 denotes the bank structure, 21 denotes the first bank structure, 22 denotes the second bank structure, 30 denotes the reflective metal layer, 31 denotes the first metal layer, 32 denotes the second metal layer, 40 denotes a black matrix, and 50 denotes a quantum dot color resistance.

On the basis of the foregoing embodiment, in an embodiment of the present application, as shown in fig. 14, fig. 14 is a schematic flow chart of a method for manufacturing a quantum dot color filter substrate, where the method for manufacturing a quantum dot color filter substrate further includes:

s104: and forming a third metal layer on the bottom surface of the first retaining wall structure, wherein the bottom surface is the surface of one side of the first retaining wall structure far away from the substrate.

And the third metal layer and the reflecting metal layer are prepared by the same process.

The preparation process of the quantum dot color film substrate in this embodiment is shown in fig. 15. In fig. 15, reference numeral 31 denotes the first metal layer, and 33 denotes the third metal layer.

In this embodiment, the third metal layer and the reflective metal layer are formed in the same process, which means that after the entire metal layer covering the sidewall and the bottom of the retaining wall structure is formed, the third metal layer and the reflective metal layer are formed in the same patterning process, thereby facilitating simplification of the manufacturing process.

On the basis of the foregoing embodiment, in another embodiment of the present application, as shown in fig. 16, fig. 16 is a schematic flow chart of a method for manufacturing a quantum dot color filter substrate, where before forming the reflective metal layer, the method further includes:

s1023: form the recess, the bottom surface of first type retaining wall structure to the inside extension of first type retaining wall structure forms the recess, the bottom surface does first type retaining wall structure keeps away from the surface of basement one side.

The preparation process of the quantum dot color film substrate in this embodiment is shown in fig. 17. The grooves may be formed by an etching process such as photolithography.

Referring to fig. 17, the opening area of the side of the groove close to the substrate is smaller than the opening area of the side of the groove far from the substrate. That is, the cross-sectional shape of the groove in a direction perpendicular to the surface of the substrate is an inverted trapezoid.

On the basis of the foregoing embodiment, in another embodiment of the present application, as shown in fig. 18, fig. 18 is a schematic flow chart of a method for manufacturing a quantum dot color filter substrate, where the method for manufacturing a quantum dot color filter substrate further includes:

s105: and forming a fourth metal layer, wherein the fourth metal layer is positioned in the groove, and the orthographic projection of the fourth metal layer on the substrate is not overlapped with the orthographic projection of the first metal layer on the substrate.

And the fourth metal layer and the first metal layer are prepared by the same process.

Referring to fig. 19, fig. 19 is a schematic view of a manufacturing process of the quantum dot color film substrate. In fig. 19, reference numeral 23 denotes the groove. Reference numeral 35 denotes the fourth metal layer.

In this embodiment, the first metal layer may be reused as the touch electrode, or a fourth metal layer located in the groove may be used as the touch electrode. When the fourth metal layer located in the groove is used as the touch electrode, the fourth metal layer also needs to be isolated into a plurality of mutually insulated metal structures by means of slotting and the like, and the metal structure is used as one touch electrode.

When the first metal layer is reused as the touch electrode, the fourth metal layer located in the groove may also be used to receive a fixed potential, so that the fourth metal layer receiving the fixed potential provides functions of electrostatic Discharge (ESD) or stray signal shielding for the quantum dot color film substrate. The fixed potential includes, but is not limited to, a ground potential (GND), a cathode Potential (PVEE) of the light emitting cell, and the like.

Similarly, when the fourth metal layer located in the groove is used as the touch electrode, the first metal layer may also be used to receive the fixed potential, so that the first metal layer may provide functions of electrostatic discharge or stray signal shielding for the quantum dot color film substrate.

Still referring to fig. 19, the open area of the side of the recess proximal to the substrate is smaller than the open area of the side of the recess distal to the substrate. At this time, the cross section of the groove in the direction perpendicular to the surface of the substrate is in an inverted trapezoid shape, so that the orthographic projection of the fourth metal layer in the groove on the substrate and the orthographic projection of the second overlapping metal on the substrate can be guaranteed not to overlap with each other, the coupling capacitance of the fourth metal layer and the second overlapping metal can be reduced, and the interference of the coupling capacitance on other signals is reduced.

To sum up, the embodiment of the application provides a quantum dot color film substrate and a preparation method thereof, a display panel and a display device, wherein the quantum dot color film substrate comprises a substrate, a retaining wall layer and a reflection metal layer, the retaining wall layer is located on one side of the substrate and comprises a plurality of retaining wall structures and a plurality of retaining wall openings, the reflection metal layer covers the side face of the retaining wall structure and is used for reflecting emergent rays of a light-emitting unit and improving the utilization rate of the emergent rays, meanwhile, the reflection metal layer is also used for receiving touch signals to perform touch detection and integrating the touch function in the quantum dot external color film substrate, the touch function is not required to be realized through a touch panel, the film quantity of the quantum dot display panel is favorably reduced, the integral thickness of the quantum dot display panel is reduced, and the light and thin requirements of a user on the quantum dot display panel are met.

Features described in the embodiments in the present specification may be replaced with or combined with each other, each embodiment is described with a focus on differences from other embodiments, and the same or similar portions in the embodiments may be referred to each other.

The previous description of the disclosed embodiments is provided to enable any person skilled in the art to make or use the present application. Various modifications to these embodiments will be readily apparent to those skilled in the art, and the generic principles defined herein may be applied to other embodiments without departing from the spirit or scope of the application. Thus, the present application is not intended to be limited to the embodiments shown herein but is to be accorded the widest scope consistent with the principles and novel features disclosed herein.

Claims

1. A quantum dot color film substrate is characterized by comprising:

a substrate including a display area;

the retaining wall layer is positioned on one side of the substrate and comprises a plurality of retaining wall structures and a plurality of retaining wall openings;

the reflecting metal layer at least covers the side face of the retaining wall structure, and the side face is the surface of the retaining wall structure close to one side of the retaining wall opening;

2. The quantum dot color film substrate according to claim 1, wherein the reflective metal layer comprises a plurality of touch electrodes and touch electrode leads;

the touch control leads are connected with the touch control electrodes in a one-to-one correspondence mode.

3. The quantum dot color film substrate according to claim 1, wherein the plurality of retaining wall structures comprise a plurality of first retaining wall structures and a plurality of second retaining wall structures;

the reflective metal layer comprises a first metal layer and a second metal layer;

the first metal layer at least covers the side wall of the first retaining wall structure, and at least exposes part of the bottom surface of the first retaining wall structure, and the bottom surface of the first retaining wall structure is the surface of the first retaining wall structure deviating from the substrate;

the second metal layer covers the side wall and the bottom surface of the second retaining wall structure, and the bottom surface of the second retaining wall structure is the surface of the second retaining wall structure deviating from one side of the substrate.

4. The quantum dot color film substrate of claim 3, wherein the reflective metal layer further comprises:

and the third metal layer is positioned on the bottom surface of the first retaining wall structure.

5. The quantum dot color film substrate of claim 4,

the third metal layer comprises a wiring metal, and the orthographic projection of the wiring metal on the substrate is not overlapped with the orthographic projection of the first metal layer on the substrate.

6. The quantum dot color film substrate according to claim 5, wherein the third metal layer further comprises a first overlapping metal, and an orthogonal projection of the first overlapping metal on the substrate is adjacent to an orthogonal projection of the first metal layer on the substrate; the orthographic projection of the first lapping metal on the substrate is not overlapped with the wiring metal.

7. The quantum dot color film substrate according to claim 3, wherein the first kind of retaining wall structure further comprises a groove, the bottom surface of the first kind of retaining wall structure extends into the first kind of retaining wall structure to form the groove, and the bottom surface is the surface of the first kind of retaining wall structure far away from the substrate.

8. The quantum dot color film substrate according to claim 7, wherein the reflective metal layer further comprises a fourth metal layer, the fourth metal layer is located in the groove, and an orthographic projection of the fourth metal layer on the substrate is not overlapped with an orthographic projection of the reflective metal layer on the substrate.

9. The quantum dot color film substrate of claim 7, wherein the fourth metal layer is further configured to receive a fixed potential or the first metal layer is further configured to receive the fixed potential.

10. The quantum dot color filter substrate according to claim 8, further comprising a second overlapping metal, wherein the second overlapping metal is located on the bottom surface.

11. The quantum dot color film substrate according to claim 7, wherein the opening area of the groove on the side close to the substrate is smaller than the opening area of the groove on the side far from the substrate.

12. The quantum dot color film substrate of claim 1,

the quantum dot color film substrate further comprises a plurality of quantum dot color resistors, the quantum dot color resistors are located in the retaining wall openings, and the retaining wall openings are in one-to-one correspondence with the quantum dot color resistors.

13. A display panel comprising the quantum dot color film substrate according to any one of claims 1 to 12;

14. A display device characterized by comprising the display panel according to claim 13.

15. A preparation method of a quantum dot color film substrate is characterized by comprising the following steps:

providing a substrate, wherein the substrate comprises a display area;

forming a retaining wall layer, wherein the retaining wall layer is positioned on one side of the substrate; the retaining wall layer comprises a plurality of retaining wall structures and a plurality of retaining wall openings;

forming a reflection metal layer, forming the reflection metal layer on the retaining wall layer, wherein the reflection metal layer at least covers the side surface of the retaining wall structure, and the side surface is the surface of the retaining wall structure close to one side of the retaining wall opening;

16. The method for manufacturing according to claim 15, wherein the forming of the barrier layer includes: forming a plurality of first retaining wall structures and a plurality of second retaining wall structures;

the forming a reflective metal layer includes:

17. The method of manufacturing according to claim 16, further comprising:

forming a third metal layer on the bottom surface of the first retaining wall structure, wherein the bottom surface is the surface of the first retaining wall structure far away from the substrate;

and forming a third metal layer on the first metal layer by using the same process.

18. The method of claim 16, further comprising, before the forming the reflective metal layer:

form the recess, the bottom surface of first type retaining wall structure to the inside extension of first type retaining wall structure forms the recess, the bottom surface does first type retaining wall structure keeps away from the surface of basement one side.

19. The method of claim 18, further comprising forming a fourth metal layer, the fourth metal layer being located in the recess, an orthographic projection of the fourth metal layer on the substrate not overlapping an orthographic projection of the first metal layer on the substrate;