CN111732995A - High-performance water-based cutting fluid for photovoltaic silicon wafer and using method thereof - Google Patents
High-performance water-based cutting fluid for photovoltaic silicon wafer and using method thereof Download PDFInfo
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Abstract
The invention belongs to the technical field of cutting fluid, and particularly relates to a high-performance water-based cutting fluid for a photovoltaic silicon wafer and a using method thereof, wherein the high-performance water-based cutting fluid comprises the following raw materials: 5-16% of dispersing agent, 10-50% of wetting agent, 2-20% of defoaming agent, 0.01-2% of bactericide, 0.05-0.2% of pH regulator and the balance of water; wherein, the cutting fluid is prepared by heating water to 50-60 ℃, adding a dispersant, a wetting agent, a defoaming agent, a bactericide and a pH regulator, and mixing and stirring. The cutting fluid can quickly permeate into a processing interface, so that the surface tension and the frictional resistance are reduced; meanwhile, the cutting scraps are dispersed, so that the scrap agglomeration is effectively prevented; effectively reduce the temperature of the cutting surface, and is convenient to use and efficient.
Description
Technical Field
The invention belongs to the field of cutting fluid, and particularly relates to high-performance water-based cutting fluid for a photovoltaic silicon wafer and a using method thereof.
Background
With the rapid development of the photovoltaic industry, the large-diameter and ultrathin silicon wafer becomes a development trend, consolidation abrasive wire cutting technology is produced in order to further improve the cutting efficiency and the cutting yield and reduce the production cost, and the water-based cutting fluid is an essential auxiliary material due to the low process cost and green and environment-friendly raw materials.
Due to the technical characteristics of the photovoltaic industry and the fixed abrasive cutting technology, the cut silicon wafer is required to have a smooth surface, small thickness deviation, complete section, high cutting yield and low raw material loss; thus, higher demands are made on the performance of the cutting fluid. In the production of the wire cutting, more cutting fluid is required to be added, and generally, 300-400L of water is added to 0.8-1.5L of cutting fluid, so that more cutting fluid is consumed, and a certain number of times of adding is required for the same batch of cutting. In other words, the concentration of the cutting fluid is not high, and the cutting fluid needs to be added for many times under a certain process amount, so that the consumed raw materials are large, and the increase of the total process cost and the reduction of the efficiency are caused.
Therefore, a cutting fluid which is efficient and can achieve the same effect by only adding a small amount of cutting fluid is urgently needed. The use amount is reduced, the yield is improved, and the cost is saved.
Disclosure of Invention
The invention provides a high-performance water-based cutting fluid for a photovoltaic silicon wafer, which improves the use efficiency of each cutting fluid on the premise of ensuring the permeability of the cutting fluid and reducing the surface tension and the friction force of a cutting system, and can be used at least once in each cutting to solve the problems in the prior art.
The technical scheme adopted by the invention is as follows:
a high-performance water-based cutting fluid for photovoltaic silicon wafers comprises the following raw materials in percentage by weight:
wherein, the cutting fluid is prepared by heating water to 50-60 ℃, adding a dispersant, a wetting agent, a defoaming agent, a bactericide and a pH regulator, and mixing and stirring.
Preferably, the dispersant is one or more of propylene glycol, ethylene glycol monomethyl ether, ethylene glycol monoethyl ether, ethylene glycol monobutyl ether, ethylene glycol, ethanol, isopropanol, a polyoxyethylene block polymer, a polyoxypropylene block polymer and a polyoxyethylene polyoxypropylene block copolymer. The preferable dispersing agent ensures that particles after the silicon wafer is cut are not easy to approach and agglomerate, and meanwhile, the dispersing agent is easy to rapidly permeate into the cut surface so as to improve the cutting efficiency.
Preferably, the wetting agent is one or more of polyoxyethylene ether alkylphenol ether, fatty glyceride, polyglycerol ester, sorbitol, polyoxyethylene ether sorbitol ester and acetylene glycol ether. The preferable wetting agent can obviously reduce the surface tension of the liquid, provide lubricity and permeability, enable the cutting fluid to have better permeability and infiltration performance, and obviously reduce the friction force, reduce the cutting damage and improve the cutting yield of the silicon rod when the surface of the silicon wafer is cut.
Preferably, the defoaming agent is one or more of polysiloxane, alkynediol and fluorine-containing defoaming agent. The defoaming agent inhibits the generation of foam so as to fully play the infiltration and permeation role of the cutting fluid.
Preferably, the bactericide is triazine, potassium sorbate or a combination thereof. The bactericide inhibits the generation of bacteria and avoids biological erosion so as to maintain the performance of the cutting fluid.
Preferably, the PH regulator is one or more of acetic acid, lactic acid, hydrochloric acid, oxalic acid, citric acid, neodecanoic acid and isononanoic acid. The pH value is adjusted by the pH regulator, so that the cutting fluid is more stable, and the generation of hydrogen in the silicon wafer cutting process is inhibited.
Or, further comprising: the weight percentage of the fluorocarbon surfactant is 0.1-0.25%. The fluorocarbon surfactant is efficient and stable, has high surface activity, high thermodynamic and chemical stability, and improves the use efficiency of the cutting concentrated solution.
A method for using a high-performance water-based cutting fluid for a photovoltaic silicon wafer is characterized in that the cutting fluid prepared according to the components is diluted by water by 500-1350 times and used for cutting the photovoltaic silicon wafer. The cutting fluid is used at a high dilution multiple, is high in efficiency, is convenient for cutting a photovoltaic silicon wafer for one time, and improves the production efficiency.
The invention has the beneficial effects that: the high-performance water-based cutting fluid for the photovoltaic silicon wafer can quickly permeate into a processing interface, reduce the surface tension and reduce the frictional resistance; meanwhile, the cutting scraps are dispersed, so that the scrap agglomeration is effectively prevented; effectively reduce the temperature of the cutting surface, and is convenient to use and efficient. The method comprises the following specific steps:
1. the preparation process is simple: compared with normal temperature preparation, the warm water preparation can form a stable system under the condition of thinner system concentration, and the effect among all components is promoted.
2. The effect is stable: after the proportion is reduced, the performance of the cutting fluid is not reduced, the cutting fluid can quickly permeate into a processing interface, the surface tension is reduced, the frictional resistance is reduced, and the agglomeration of cutting chips is effectively prevented.
3. The cost is saved: the dilution ratio is high, the same effect can be achieved only by adding 1/6-1/2 of the dosage of the conventional product, and the process cost and the raw material cost are indirectly reduced.
Detailed Description
The present invention is further illustrated by the following examples, which are not intended to limit the invention to these embodiments. It will be appreciated by those skilled in the art that the present invention encompasses all alternatives, modifications and equivalents as may be included within the scope of the claims.
A high-performance water-based cutting fluid for photovoltaic silicon wafers comprises the following raw materials in percentage by weight:
wherein, the cutting fluid is prepared by heating water to 50-60 ℃, adding a dispersant, a wetting agent, a defoaming agent, a bactericide and a pH regulator, and mixing and stirring.
The dispersing agent is one or more of propylene glycol, ethylene glycol monomethyl ether, ethylene glycol monoethyl ether, ethylene glycol monobutyl ether, ethylene glycol, ethanol, isopropanol, polyoxyethylene block polymer, polyoxypropylene block polymer and polyoxyethylene polyoxypropylene block copolymer. The preferable dispersing agent ensures that particles after the silicon wafer is cut are not easy to approach and agglomerate, and meanwhile, the dispersing agent is easy to rapidly permeate into the cut surface so as to improve the cutting efficiency. The wetting agent is one or more of polyoxyethylene ether alkylphenol ether, fatty glyceride, polyglycerol ester, sorbitol, polyoxyethylene ether sorbitol ester and acetylene glycol ether. The preferable wetting agent can obviously reduce the surface tension of the liquid, provide lubricity and permeability, enable the cutting fluid to have better permeability and infiltration performance, and obviously reduce the friction force, reduce the cutting damage and improve the cutting yield of the silicon rod when the surface of the silicon wafer is cut. The defoaming agent is one or more of polysiloxane, alkynediol and fluorine-containing defoaming agent. The defoaming agent inhibits the generation of foam so as to fully play the infiltration and permeation role of the cutting fluid. The bactericide is triazine, potassium sorbate or a combination thereof. The bactericide inhibits the generation of bacteria and avoids biological erosion so as to maintain the performance of the cutting fluid. The pH regulator is one or more of acetic acid, lactic acid, hydrochloric acid, oxalic acid, citric acid, neodecanoic acid and isononanoic acid. The pH value is adjusted by the pH regulator, so that the cutting fluid is more stable, and the generation of hydrogen in the silicon wafer cutting process is inhibited.
The method can also comprise the following steps: the weight percentage of the fluorocarbon surfactant is 0.1-0.25%. The fluorocarbon surfactant is efficient and stable, has high surface activity, high thermodynamic and chemical stability, and improves the use efficiency of the cutting concentrated solution.
The proportions of the high-performance water-based cutting fluid for photovoltaic silicon wafers in examples 1-5 are shown in Table 1.
TABLE 1 TABLE for the ratio of each component of the high-performance water-based cutting fluids of examples 1 to 5
Wherein the dispersant of example 1 is 3 parts of polyoxypropylene block polymer and 10 parts of ethylene glycol monobutyl ether, the dispersant of example 2 is 5 parts of polyoxyethylene block polymer and 10 parts of isopropanol, the dispersant of example 3 is 2 parts of polyoxyethylene block polymer, 2 parts of polyoxypropylene block polymer and 12 parts of propylene glycol, the dispersant of example 4 is 3 parts of polyoxyethylene polyoxypropylene block polymer and 4 parts, and the dispersant of example 5 is 5 parts of ethylene glycol monoethyl ether, 5 parts of isopropanol, 3 parts of polyoxyethylene block polymer and 4 parts of polyoxypropylene block polymer;
the wetting agent of example 1 is 5 parts of polyoxyethylene ether sorbitol ester and 30 parts of acetylene glycol ether, the wetting agent of example 2 is 10 parts of fatty acid glyceride, 20 parts of polyoxyethylene ether alkylphenol ether and 20 parts of acetylene glycol ether, the wetting agent of example 3 is 20 parts of polyoxyethylene ether alkylphenol ether and 30 parts of acetylene glycol ether, the wetting agent of example 4 is 5 parts of polyglycerol ester, 10 parts of sorbitol and 30 parts of acetylene glycol ether, and the wetting agent of example 5 is 4 parts of sorbitol, 5 parts of polyoxyethylene ether sorbitol ester and 20 parts of acetylene glycol ether;
the wetting agent is the main bearer for improving the surface activity, and comprises the steps of activating the surface of the cutting fluid, maintaining the surface activity and the like, wherein the alkynediol ether is actually alkynediol polyether and is prepared by performing polycondensation on monomer alkynediol, the polymerization degree is 10-500, and a long chain is formed;
the defoamer of example 1 was 20 parts acetylenic diol, the defoamer of example 2 was 5 parts acetylenic diol and 0.5 part polysiloxane, the defoamer of example 3 was 10 parts acetylenic diol and 1 part polysiloxane, the defoamer of example 4 was 10 parts acetylenic diol and 4 parts polysiloxane, the defoamer of example 5 was 10 parts acetylenic diol, 5 parts polysiloxane, and 3 parts trifluoropropylmethylcyclotrisiloxane;
when the acetylene glycol is used as the defoaming agent, the acetylene glycol has a polar group and a non-polar group and is a gemini surfactant, so that the surface performance of a system can be obviously improved, particularly the surface tension under dynamic conditions is obviously reduced, the cutting fluid has excellent wettability and defoaming property, the effect of quickly and effectively reducing the surface tension is realized, and micro bubbles are eliminated;
the bactericide of examples 1 to 3 is 2 parts of triazine, and the bactericide of example 4 is 1 part of triazine and 0.5 part of potassium sorbate;
0.1 part of citric acid as the pH adjusting agent in examples 1 and 4, 0.1 part of isononanoic acid as the pH adjusting agent in examples 2 and 3, and 0.1 part of oxalic acid as the pH adjusting agent in example 5;
the fluorocarbon surfactants of examples 4 and 5 are nonionic fluorocarbon surfactants.
Preparation:
heating enough water (1-10L) to 50-60 ℃, adding a dispersing agent, a wetting agent, a defoaming agent, a bactericide and a pH regulator according to the proportion, mixing and stirring, standing and slowly cooling to obtain the water-based paint.
Use of:
diluting the high-performance water-based cutting fluid for the photovoltaic silicon wafer by 500-1350 times with water, and then cutting the photovoltaic silicon wafer. The amount of the cutting fluid required to be added in 300-400L water is used once for cutting the silicon ingot.
Table 2 shows the results of the performance tests of examples 1 to 5 and the comparison with comparative examples 1 to 2, wherein both comparative examples 1 and 2 use a commercially available water-based cutting fluid for photovoltaic silicon wafers.
TABLE 2 Performance test results of examples 1 to 5 and comparative tables with comparative examples 1 to 2
The above analysis shows that compared with the existing water-based cutting fluid for photovoltaic silicon wafers sold on the market, the diluted cutting fluid for cutting silicon ingots is obtained by adding the same amount of water into the cutting fluid (concentrated fluid) of the embodiment of the invention, so that the amount of the cutting fluid of at least 1/3 can be saved, and the cost is saved. And the wettability and the surface tension are obviously optimized and improved, the silicon ingot can quickly permeate into a processing interface when being cut, the surface tension and the frictional resistance are reduced, the surface of the silicon ingot is effectively cooled, and cutting scraps can be prevented from being agglomerated.
In examples 4 and 5, the surface tension was further reduced, and the amount actually used could be further reduced.
It should be noted that the above embodiments can be freely combined as necessary. The foregoing has outlined rather broadly the preferred embodiments and principles of the present invention and it will be appreciated that those skilled in the art may devise variations of the present invention that are within the spirit and scope of the appended claims.
Claims (8)
1. The high-performance water-based cutting fluid for the photovoltaic silicon wafer is characterized by comprising the following raw materials in percentage by weight:
wherein, the cutting fluid is prepared by heating water to 50-60 ℃, adding a dispersant, a wetting agent, a defoaming agent, a bactericide and a pH regulator, and mixing and stirring.
2. The high-performance water-based cutting fluid for photovoltaic silicon wafers as claimed in claim 1, wherein the dispersant is one or more selected from propylene glycol, ethylene glycol monomethyl ether, ethylene glycol monoethyl ether, ethylene glycol monobutyl ether, ethylene glycol, ethanol, isopropanol, polyoxyethylene block polymer, polyoxypropylene block polymer, and polyoxyethylene polyoxypropylene block copolymer.
3. The high-performance water-based cutting fluid for photovoltaic silicon wafers as claimed in claim 1, wherein the wetting agent is one or more of polyoxyethylene ether alkylphenol ether, fatty glyceride, polyglycerol ester, sorbitol, polyoxyethylene ether sorbitol ester, and acetylene glycol ether.
4. The high-performance water-based cutting fluid for photovoltaic silicon wafers as claimed in claim 1, wherein the defoaming agent is one or more of polysiloxane, acetylenic diol and fluorine-containing defoaming agent.
5. The high-performance water-based cutting fluid for photovoltaic silicon wafers as set forth in claim 1, wherein the bactericide is triazine, potassium sorbate or a combination thereof.
6. The high-performance water-based cutting fluid for photovoltaic silicon wafers as claimed in claim 1, wherein the pH regulator is one or more of acetic acid, lactic acid, hydrochloric acid, oxalic acid, citric acid, neodecanoic acid and isononanoic acid.
7. The high-performance water-based cutting fluid for photovoltaic silicon wafers as set forth in claim 1, further comprising: the weight percentage of the fluorocarbon surfactant is 0.1-0.25%.
8. A using method of a high-performance water-based cutting fluid for photovoltaic silicon wafers is characterized in that the cutting fluid as claimed in claims 1 to 7 is diluted by water by 500 to 1350 times and used for cutting photovoltaic silicon wafers.
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| CN202010629159.5A CN111732995A (en) | 2020-07-03 | 2020-07-03 | High-performance water-based cutting fluid for photovoltaic silicon wafer and using method thereof |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN112980558A (en) * | 2021-03-01 | 2021-06-18 | 南宁珀源能源材料有限公司 | Sapphire cutting fluid and preparation method thereof |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102021070A (en) * | 2010-12-14 | 2011-04-20 | 南通宏申化工有限公司 | Cutting fluid for water-soluble monocrystalline silicon wafers or polycrystalline silicon wafers |
| CN102382712A (en) * | 2011-09-22 | 2012-03-21 | 江苏凯兴塑化有限公司 | Special water-based cutting fluid for diamond wire saw |
| CN105647394A (en) * | 2016-02-24 | 2016-06-08 | 湖南皓志科技股份有限公司 | Water-based diamond polishing solution and preparation method thereof |
| CN108559609A (en) * | 2018-06-04 | 2018-09-21 | 保定良合新材料科技有限公司 | A kind of Buddha's warrior attendant wire cutting liquid for solar silicon wafers processing |
-
2020
- 2020-07-03 CN CN202010629159.5A patent/CN111732995A/en active Pending
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102021070A (en) * | 2010-12-14 | 2011-04-20 | 南通宏申化工有限公司 | Cutting fluid for water-soluble monocrystalline silicon wafers or polycrystalline silicon wafers |
| CN102382712A (en) * | 2011-09-22 | 2012-03-21 | 江苏凯兴塑化有限公司 | Special water-based cutting fluid for diamond wire saw |
| CN105647394A (en) * | 2016-02-24 | 2016-06-08 | 湖南皓志科技股份有限公司 | Water-based diamond polishing solution and preparation method thereof |
| CN108559609A (en) * | 2018-06-04 | 2018-09-21 | 保定良合新材料科技有限公司 | A kind of Buddha's warrior attendant wire cutting liquid for solar silicon wafers processing |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN112980558A (en) * | 2021-03-01 | 2021-06-18 | 南宁珀源能源材料有限公司 | Sapphire cutting fluid and preparation method thereof |
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