CN111725402B - Capacitor barrier layer structure and preparation method thereof - Google Patents
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Abstract
The application relates to the technical field of semiconductors, in particular to an MIM capacitor barrier layer structure and a preparation method of the barrier layer structure. The barrier layer structure includes: the stress barrier layer comprises a first stress barrier layer and a second stress barrier layer which are sequentially stacked, and the stress value of the first stress barrier layer is smaller than that of the second barrier layer. The preparation method of the barrier layer structure comprises the steps of providing a first nitrogen flow to prepare a first stress barrier layer; and providing a second nitrogen flow, and manufacturing a second stress barrier layer which is sequentially laminated with the first stress barrier layer. The dielectric layer structure comprises a dielectric layer, the dielectric layer comprises an upper surface and a lower surface which are opposite, and the barrier layer structures for the MIM capacitor are respectively formed on the upper surface and the lower surface of the dielectric layer. The MIM capacitor barrier layer structure, the dielectric layer structure and the preparation method of the barrier layer structure can solve the problem that the barrier layer is peeled off due to large stress in the related technology.
Description
Technical Field
The application relates to the technical field of semiconductors, in particular to a barrier layer structure for an MIM capacitor and a manufacturing method for the barrier layer structure for the MIM capacitor.
Background
With the development of very large scale integrated circuits, the demand for capacitance density per unit area is increasing. MIM capacitors are a key tool in order to ensure a high level of performance of the device while creating a high precision capacitance. The MIM capacitor is usually a sandwich structure, and includes metal electrodes disposed on an upper layer and a lower layer, and a dielectric layer is isolated between the upper layer metal electrode and the lower layer metal electrode.
Generally, the dielectric layer is a composite layer, which includes a dielectric layer, an NDC (Nitride Doped Silicon Carbide) layer, and a barrier layer made of TaN (tantalum Nitride) or TiN (titanium Nitride), so as to prevent the problem of diffusion of metal atoms in the upper and lower plates of the MIM capacitor into the dielectric layer. The stress of the barrier layer gradually increases with the increase of the thickness, and particularly, the barrier layer formed on the NDC layer or the dielectric layer made of SiN (silicon nitride) is peeled off due to the large stress, which adversely affects the subsequent processes.
Disclosure of Invention
The application provides an MIM capacitor barrier layer structure, a dielectric layer structure and a preparation method of the barrier layer structure, which can solve the problem that the barrier layer is peeled off due to large stress in the related technology.
As a first aspect of the present application, there is provided a barrier structure for a MIM capacitor, comprising: the stress barrier layer comprises a first stress barrier layer and a second stress barrier layer which are sequentially stacked, and the stress value of the first stress barrier layer is smaller than that of the second barrier layer.
Optionally, a stress transition layer is further formed on the first stress blocking layer and the second stress blocking layer, and a stress value of the stress transition layer is between a stress value of the first stress blocking layer and a stress value of the second blocking layer.
As a second aspect of the present application, there is provided a dielectric layer structure of a MIM capacitor, the dielectric layer structure of the MIM capacitor comprising a dielectric layer including opposing upper and lower surfaces, on which barrier layer structures for a MIM capacitor according to claim 1 or claim 2 are formed, respectively;
the barrier layer structure is positioned on the upper surface of the dielectric layer, and the second stress barrier layer of the barrier layer structure is attached to the upper surface of the dielectric layer;
and the second stress barrier layer of the barrier layer structure is attached to the lower surface of the dielectric layer.
Optionally, the upper and lower sides of the dielectric layer are respectively provided with an adjacent layer;
the abutment layer is bonded to the first stress barrier layer corresponding to the barrier layer structure.
As a third aspect of the present application, there is provided a method for fabricating a barrier structure for a MIM capacitor, the method for fabricating a barrier structure for a MIM capacitor at least comprising the steps of:
providing a first nitrogen flow to manufacture a first stress barrier;
providing a second nitrogen flow, and manufacturing a second stress barrier layer which is sequentially laminated with the first stress barrier layer;
and according to the flow value of the first nitrogen flow, the stress value of the first stress barrier layer is smaller than the stress value of the second stress barrier layer.
Optionally, the flow value of the first nitrogen flow is in a range of 30-40 sccm or 90-100 sccm.
Optionally, the flow rate value of the second nitrogen gas flow is in a range of 60 to 70sccm.
Optionally, between the step of providing the first nitrogen gas flow to fabricate the first stress barrier and the step of providing the second nitrogen gas flow to fabricate the second stress barrier, further performing:
providing a third nitrogen flow to form a stress transition layer, wherein the stress transition layer is positioned between the first stress barrier layer and the second stress barrier layer; the flow value of the third nitrogen flow is between the flow values of the first nitrogen flow and the second nitrogen flow.
The technical scheme at least comprises the following advantages: the first stress barrier layer with a small stress value is bonded with the adjacent layer, so that the bonding performance of the barrier layer structure and the adjacent layer can be ensured, the second stress barrier layer with a high stress value is attached to the dielectric layer, and the diffusion barrier performance of the barrier layer structure can be ensured, so that the problem that the barrier layer structure is peeled off due to the fact that the stress is enlarged due to the increase of the thickness of the barrier layer structure in the related technology is solved.
Drawings
In order to more clearly illustrate the detailed description of the present application or the technical solutions in the prior art, the drawings used in the detailed description or the prior art description will be briefly described below, and it is obvious that the drawings in the following description are some embodiments of the present application, and other drawings can be obtained by those skilled in the art without creative efforts.
FIG. 1 is a graph of the radius of curvature of a barrier layer provided herein as a function of nitrogen flow;
fig. 2 is a schematic diagram of a barrier structure for a MIM capacitor according to an embodiment of the present application;
fig. 3 is a schematic structural diagram of a dielectric layer structure of an MIM capacitor according to an embodiment of the present application;
fig. 4 is a flowchart of a method for fabricating a barrier structure of a MIM capacitor according to an embodiment of the present disclosure;
fig. 5 is a schematic diagram of a barrier structure for a MIM capacitor according to another embodiment of the present application;
fig. 6 is a schematic structural diagram of a dielectric layer structure of a MIM capacitor according to another embodiment of the present application;
fig. 7 is a flowchart of a method for fabricating a barrier structure of a MIM capacitor according to another embodiment of the present application.
Detailed Description
The technical solutions in the present application will be described clearly and completely with reference to the accompanying drawings, and it is obvious that the described embodiments are some, but not all embodiments of the present application. All other embodiments obtained by a person of ordinary skill in the art based on the embodiments in the present application without making creative efforts belong to the protection scope of the present application.
In the description of the present application, it should be noted that the terms "center", "upper", "lower", "left", "right", "vertical", "horizontal", "inner", "outer", and the like indicate orientations or positional relationships based on the orientations or positional relationships shown in the drawings, and are only for convenience of description and simplicity of description, and do not indicate or imply that the device or element being referred to must have a particular orientation, be constructed and operated in a particular orientation, and thus, should not be construed as limiting the present application. Furthermore, the terms "first," "second," and "third" are used for descriptive purposes only and are not to be construed as indicating or implying relative importance.
In the description of the present application, it should be noted that, unless otherwise explicitly stated or limited, the terms "mounted," "connected," and "connected" are to be construed broadly, and may be, for example, a fixed connection, a detachable connection, or an integral connection; the connection can be mechanical connection or electrical connection; the two elements may be directly connected or indirectly connected through an intermediate medium, or may be communicated with each other inside the two elements, or may be wirelessly connected or wired connected. The specific meaning of the above terms in this application will be understood to be a specific case for those of ordinary skill in the art.
In addition, the technical features mentioned in the different embodiments of the present application described below may be combined with each other as long as they do not conflict with each other.
Referring to fig. 1, which shows a graph of the relationship between the radius of curvature and the nitrogen flow rate variation of a barrier layer made of a metal nitride, it is known from the related art that the relationship between the radius of curvature and the stress of a barrier layer made of a metal nitride is in a negative correlation, i.e., when the radius of curvature increases, it can be shown that the stress decreases, the barrier layer bulges with a positive radius of curvature, and the barrier layer bulges with a negative radius of curvature.
As can be seen from fig. 1, when the flow value of the nitrogen gas flow is between 0 and a, the radius of curvature of the barrier layer gradually increases with the increase of the nitrogen gas flow, i.e., the stress of the barrier layer gradually decreases until the flow value of the nitrogen gas flow is a, the radius of curvature of the barrier layer is the largest, i.e., the stress of the barrier layer is the smallest; when the flow value of the nitrogen flow is between A and BL, the curvature radius of the barrier layer is gradually reduced along with the continuous increase of the nitrogen flow, namely the stress of the barrier layer is gradually increased, and the curvature radius of the barrier layer is minimum until the flow value of the nitrogen flow is BL, namely the stress of the barrier layer is maximum; when the flow value of the nitrogen flow is larger than BL, i.e., from BL to B, the radius of curvature of the barrier layer gradually increases, i.e., the stress of the barrier layer gradually decreases, as the flow value of the nitrogen flow increases.
It can be seen that the barrier stress value is at the trough when the flow value of the nitrogen flow is a, and at the peak when the flow value of the nitrogen flow is BL.
For the barrier layer made of metal nitride, the metal nitride can adopt TaN or TiN; the nitrogen gas flow rate value represented by A is in the range of 30 to 40sccm, and the nitrogen gas flow rate value represented by BL is in the range of 60 to 70sccm.
Referring to fig. 2, a barrier structure for a MIM capacitor according to an embodiment of the present application is schematically illustrated, and the barrier structure for a MIM capacitor includes:
the first stress blocking layer 241 and the second stress blocking layer 242 are stacked in sequence, and the stress value of the first stress blocking layer 241 is smaller than that of the second stress blocking layer 242.
The second stress barrier layer 242 with higher stress is suitable for being used as a target layer for ensuring the diffusion barrier performance of the barrier layer structure. The first stress barrier 241 with a lower stress is suitable for use as an adhesive layer for ensuring the adhesion of the barrier structure to its adjacent layers.
Referring to fig. 3, a dielectric layer structure of a MIM capacitor according to an embodiment of the present application is schematically illustrated, the dielectric layer structure includes a dielectric layer 220, the dielectric layer 220 includes an upper surface and a lower surface opposite to each other, and a barrier layer structure for a MIM capacitor as illustrated in fig. 2 is respectively formed on the upper surface and the lower surface of the dielectric layer 220.
The barrier structure on the upper surface of the dielectric layer 220 is an upper barrier structure 211, and the upper barrier structure 211 includes a first stress barrier 241 and a second stress barrier 242 stacked in sequence as shown in fig. 2, and a stress value of the first stress barrier 241 is smaller than a stress value of the second stress barrier 242. The second stress barrier 242 of the upper barrier structure 211 is attached to the upper surface of the dielectric layer 220, and the first stress barrier 241 is stacked on the second stress barrier 242.
The barrier structure on the lower surface of the dielectric layer 220 is a lower barrier structure 212, and the lower barrier structure 212 includes a first stress barrier 241 and a second stress barrier 242 stacked in sequence as shown in fig. 2, and the stress value of the first stress barrier 241 is smaller than that of the second stress barrier 242. The second stress barrier 242 of the lower barrier structure 212 is attached to the lower surface of the dielectric layer 220, and the first stress barrier 241 is stacked under the second stress barrier 242.
With reference to fig. 3, adjacent layers are disposed on the upper and lower sides of the dielectric layer 220; the adjacent layer is bonded to the first stress barrier 241 of the corresponding barrier structure.
The upper adjacent layer 231 is the upper adjacent layer 231 on the upper side of the dielectric layer 220, and the upper adjacent layer 231 is adhered to the first stress-blocking layer 241 of the upper barrier layer structure 211.
The adjacent layer on the underside of the dielectric layer 220 is a lower adjacent layer 232, the lower adjacent layer 232 being bonded to the first stress barrier layer 241 of the lower barrier structure 212.
This embodiment is through bonding the less first stress barrier layer of stress value and adjacent layer mutually, can guarantee the adhesion properties of this barrier layer structure and adjacent layer, and is attached the higher second stress barrier layer of stress value and dielectric layer, can guarantee the diffusion barrier properties of barrier layer structure to in avoiding the correlation technique, lead to the stress grow because of the thickness increase of barrier layer structure, advance to lead to the problem appearance that barrier layer structure peeled off.
Referring to fig. 4, a flow chart of a method for fabricating a barrier structure of a MIM capacitor according to an embodiment of the present application is illustrated, where the method for fabricating a barrier structure of a MIM capacitor is used to fabricate the barrier structure shown in fig. 2, and includes the steps of:
step S11: a first flow of nitrogen is provided to create a first stress barrier.
Step S12: and providing a second nitrogen flow, and manufacturing a second stress barrier layer which is sequentially laminated with the first stress barrier layer.
And the stress value of the first stress barrier layer manufactured according to the flow value of the first nitrogen flow is smaller than the stress value of the second stress barrier layer manufactured according to the flow value of the second nitrogen flow.
It should be noted that, in addition to performing S11 and S12 in sequence according to the above steps, S12 and S11 may also be performed in sequence, that is, the second stress barrier layer is first fabricated, and then the first stress barrier layer is fabricated, so that the same technical effect as that of the present embodiment can be achieved.
With continued reference to fig. 1, the flow value of the second nitrogen flow rate may be selected as the BL value shown in fig. 1, and the flow value of the first nitrogen flow rate may be selected as the a value or the B value shown in fig. 1. When the BL value shown in fig. 1 is selected as the flow value of the second nitrogen flow, the curvature radius of the second stress barrier layer is the smallest and the stress value is the largest, so as to ensure that the second stress barrier layer has sufficient diffusion barrier capability. When the value a shown in fig. 1 is selected as the flow value of the first nitrogen flow, the curvature radius of the first stress barrier layer manufactured according to the flow value of the first nitrogen flow is the largest, and the stress value is the smallest, so that the first stress barrier layer has sufficient adhesion, and can be reliably adhered to the corresponding adjacent layer, thereby avoiding the peeling of the barrier layer structure. When the flow value of the first nitrogen flow is the value B shown in fig. 1, the curvature radius of the first stress barrier layer manufactured according to the flow value of the first nitrogen flow is large, and the stress value is small, so that the first stress barrier layer has sufficient adhesion, and can be reliably adhered to the corresponding adjacent layer, thereby preventing the barrier layer structure from peeling off.
The barrier layer made of a metal nitride has a nitrogen flow rate value represented by A in the range of 30 to 40sccm, a nitrogen flow rate value represented by BL in the range of 60 to 70sccm, and a nitrogen flow rate value represented by B in the range of 90 to 100sccm.
When the flow value of the first nitrogen flow is selected from the value A shown in FIG. 1, namely the range of the nitrogen flow value is 30-40 sccm, the curvature radius of the first stress barrier layer manufactured according to the flow value of the first nitrogen flow is-120 m; when the flow rate value of the first nitrogen flow is the value B shown in FIG. 1, that is, when the range of the nitrogen flow rate value is 90-100 sccm, the curvature radius of the first stress barrier layer manufactured according to the flow rate value of the first nitrogen flow is-120 m; when the BL value shown in fig. 1 is selected as the flow rate value of the second nitrogen flow rate, that is, when the nitrogen flow rate value is in the range of 60 to 70sccm, the curvature radius of the second stress barrier layer manufactured based on the flow rate value of the second nitrogen flow rate is-106 m.
Generally, the material of the adjacent layer is one or more of NDC (Nitride Doped Silicon Carbide), silicon oxide or Silicon Nitride, and the stress value of the adjacent layer is smaller than the minimum stress value of the barrier layer made of metal Nitride, so that when the stress value of the barrier layer is reduced, the stress difference between the adjacent layer and the adjacent layer is minimized, and the adjacent layer has strong adhesion performance.
The flow rate value of the first nitrogen flow can be selected to be in the range of 30-40 sccm or 90-100 sccm, and the flow rate value of the second nitrogen flow can be selected to be in the range of: 60-70 sccm.
Referring to fig. 5, a barrier structure for a MIM capacitor according to another embodiment of the present application is schematically illustrated, the barrier structure for a MIM capacitor including:
the stress-resistant structure comprises a first stress-resistant layer 241, a stress transition layer 243 and a second stress-resistant layer 242 which are sequentially stacked, wherein the stress transition layer 243 has a stress value between that of the first stress-resistant layer 241 and that of the second stress-resistant layer 242.
The second stress barrier layer with larger stress is suitable for being used as a target layer and is used for ensuring the diffusion barrier performance of the barrier layer structure. The first stress barrier layer with smaller stress is suitable for being used as an adhesive layer and is used for ensuring the adhesive property of the barrier layer structure and an adjacent layer thereof. The stress transition layer is used for playing a role in buffering stress between the first stress barrier layer and the second stress barrier layer, and the overall stress reliability of the barrier layer structure is further improved.
Referring to fig. 6, a dielectric layer structure of a MIM capacitor according to another embodiment of the present application is schematically illustrated, the dielectric layer structure including a dielectric layer 220, the dielectric layer 220 including upper and lower surfaces opposite to each other, and a barrier layer structure for a MIM capacitor as illustrated in fig. 5 is formed on the upper and lower surfaces of the dielectric layer 220, respectively.
The barrier layer structure on the upper surface of the dielectric layer 220 is an upper barrier layer structure 211, and the upper barrier layer structure 211, as shown in fig. 5, includes a first stress barrier layer 241, a stress transition layer 243, and a second stress barrier layer 242 stacked in sequence, and the stress value of the stress transition layer 243 is between the stress value of the first stress barrier layer 241 and the stress value of the second stress barrier layer 242. The second stress barrier layer 242 of the upper barrier structure 211 is attached to the upper surface of the dielectric layer 220, and the stress transition layer 243 and the first stress barrier layer 241 are sequentially stacked on the second stress barrier layer 242.
The barrier structure on the lower surface of the dielectric layer 220 is an underlying barrier structure 212, and the underlying barrier structure 212 includes, as shown in fig. 5, a first stress barrier 241, a stress transition layer 243 and a second stress barrier 242 stacked in sequence, and the stress value of the stress transition layer 243 is between the stress value of the first stress barrier 241 and the stress value of the second stress barrier 242. The second stress barrier 242 of the lower barrier structure 212 is attached to the lower surface of the dielectric layer 220, and a stress transition layer 243 and a first stress barrier 241 are sequentially stacked under the second stress barrier 242.
With reference to fig. 6, adjacent layers are disposed on the upper and lower sides of the dielectric layer 220; the adjacent layer is bonded to the first stress barrier 241 of the corresponding barrier structure.
The upper adjacent layer 231 is the upper adjacent layer 231 on the upper side of the dielectric layer 220, and the upper adjacent layer 231 is adhered to the first stress-blocking layer 241 of the upper barrier layer structure 211.
The adjacent layer on the underside of the dielectric layer 220 is a lower adjacent layer 232, the lower adjacent layer 232 being bonded to the first stress barrier 241 of the lower barrier structure 212.
This embodiment is through bonding the less first stress barrier layer of stress value with the adjacent layer mutually, can guarantee the adhesion properties of this barrier layer structure and adjacent layer, it is attached with the dielectric layer with the higher second stress barrier layer of stress value, can guarantee the diffusion barrier properties of barrier layer structure, the stress transition layer is used for playing the effect of stress buffering between first stress barrier layer and second stress barrier layer, further improve the holistic stress reliability of this barrier layer structure, avoid among the correlation technique, lead to the stress grow because of the thickness increase of barrier layer structure, it appears to lead to the problem that the barrier layer structure peeled off to go forward.
Referring to fig. 7, a flow chart of a method for fabricating a barrier structure of a MIM capacitor according to another embodiment of the present application is illustrated, the method for fabricating a barrier structure of a MIM capacitor is used to fabricate the barrier structure shown in fig. 5, and the steps include:
step S24: a first flow of nitrogen is provided to create a first stress barrier.
Step S22: and providing a third nitrogen flow rate to manufacture a stress transition layer which is sequentially laminated with the first stress barrier layer.
Step S23: and providing a second nitrogen flow, and manufacturing a second stress barrier layer which is sequentially laminated with the stress transition layer.
The stress transition layer is positioned between the first stress barrier layer and the second stress barrier layer; and according to the flow value of the first nitrogen flow, the stress value of the first stress barrier layer is smaller than the stress value of the second stress barrier layer. The flow value of the third nitrogen flow is between the flow value of the first flow and the flow value of the second flow, that is, the stress value of the stress transition layer is made according to the flow value of the third nitrogen flow, and the stress value is between the stress value of the first stress barrier layer and the stress value of the second stress barrier layer.
It should be noted that, in addition to performing S24, S22 and S23 in sequence according to the above steps, S23, S22 and S24 may also be performed in sequence, that is, the second stress blocking layer is first fabricated, then the stress transition layer is fabricated, and finally the first stress blocking layer is fabricated on the stress transition layer, so that the same technical effects as those of the embodiment can be achieved.
With continued reference to fig. 1, the flow value for the second nitrogen flow may be selected as BL as shown in fig. 1, the flow value for the first nitrogen flow may be selected as either a or B as shown in fig. 1, and the flow value for the third nitrogen flow may be selected as either an a 'value between a and BL values or a B' value between BL and B values. When the flow value of the second nitrogen flow is selected from the BL value shown in fig. 1, the curvature radius of the second stress barrier layer manufactured according to the flow value of the second nitrogen flow is the lowest, and the stress value is the largest, so that the second stress barrier layer has sufficient diffusion barrier capability. When the flow value of the first nitrogen flow is the value a shown in fig. 1, the curvature radius of the first stress barrier layer manufactured according to the flow value of the first nitrogen flow is the largest, and the stress value is the smallest, so as to ensure that the first stress barrier layer has sufficient adhesiveness, and can be reliably adhered to the corresponding adjacent layer, so as to avoid peeling of the barrier layer structure. When the flow value of the first nitrogen flow is the value B shown in fig. 1, the curvature radius of the first stress barrier layer manufactured according to the flow value of the first nitrogen flow is large, and the stress value is small, so that the first stress barrier layer has sufficient adhesion, and can be reliably adhered to the corresponding adjacent layer, thereby preventing the barrier layer structure from peeling off. When the flow value of the third nitrogen flow is selected to be the value a 'or the value B', the stress transition layer manufactured according to the third nitrogen flow can play a good stress buffering role between the first stress barrier layer and the second stress barrier layer.
It should be understood that the above examples are only for clarity of illustration and are not intended to limit the embodiments. Other variations and modifications will be apparent to persons skilled in the art in light of the above description. This need not be, nor should it be exhaustive of all embodiments. And obvious variations or modifications of this invention are intended to be covered by the scope of the invention as expressed herein.
Claims (7)
1. A barrier structure for a MIM capacitor, comprising: the stress barrier structure comprises a first stress barrier layer and a second stress barrier layer which are sequentially stacked, wherein the stress value of the first stress barrier layer is smaller than that of the second stress barrier layer; the dielectric layer structure of the MIM capacitor comprises a dielectric layer, the dielectric layer comprises an upper surface and a lower surface which are opposite, and the barrier layer structure for the MIM capacitor is respectively formed on the upper surface and the lower surface of the dielectric layer; the barrier layer structure is positioned on the upper surface of the dielectric layer, and the second stress barrier layer of the barrier layer structure is attached to the upper surface of the dielectric layer;
and the second stress barrier layer of the barrier layer structure is attached to the lower surface of the dielectric layer.
2. The barrier structure of claim 1, further comprising a stress transition layer formed between the first stress barrier layer and the second stress barrier layer, wherein the stress transition layer has a stress value between a stress value of the first stress barrier layer and a stress value of the second stress barrier layer.
3. The barrier structure of claim 1, wherein the dielectric layer has adjacent layers on upper and lower sides of the dielectric layer;
the adjacent layer is bonded to the first stress barrier layer corresponding to the barrier layer structure.
4. A manufacturing method for a MIM capacitor barrier structure is characterized by at least comprising the following steps:
providing a first nitrogen flow to manufacture a first stress barrier layer;
providing a second nitrogen flow, and manufacturing a second stress barrier layer which is sequentially laminated with the first stress barrier layer;
and the stress value of the first stress barrier layer manufactured according to the flow value of the first nitrogen flow is smaller than the stress value of the second stress barrier layer manufactured according to the flow value of the second nitrogen flow.
5. The method of claim 4, wherein the first nitrogen gas flow has a flow value in a range from about 30 sccm to about 40sccm or from about 90 sccm to about 100sccm.
6. The method of claim 4, wherein the second flow rate has a flow rate value in a range from about 60 sccm to about 70sccm.
7. The method of fabricating a barrier structure for a MIM capacitor according to claim 4 wherein between the step of providing a first flow of nitrogen to fabricate the first stress barrier and the step of providing a second flow of nitrogen to fabricate the second stress barrier, further performing:
providing a third nitrogen flow to manufacture a stress transition layer; the stress transition layer is positioned between the first stress barrier layer and the second stress barrier layer; the flow value of the third nitrogen flow is between the flow value of the first nitrogen flow and the flow value of the second nitrogen flow.
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| CN102456749A (en) * | 2010-10-20 | 2012-05-16 | 中芯国际集成电路制造(上海)有限公司 | Metal-insulator-metal (MIM) capacitor structure and manufacturing method thereof |
| CN108962818A (en) * | 2017-05-26 | 2018-12-07 | 中芯国际集成电路制造(上海)有限公司 | The production method and capacitance structure of capacitance structure |
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| CN102456749A (en) * | 2010-10-20 | 2012-05-16 | 中芯国际集成电路制造(上海)有限公司 | Metal-insulator-metal (MIM) capacitor structure and manufacturing method thereof |
| CN108962818A (en) * | 2017-05-26 | 2018-12-07 | 中芯国际集成电路制造(上海)有限公司 | The production method and capacitance structure of capacitance structure |
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