CN111725253B

CN111725253B - Electronic integrated device and manufacturing method thereof

Info

Publication number: CN111725253B
Application number: CN202010612146.7A
Authority: CN
Inventors: 谢梦兰; 庞惠卿; 高亮
Original assignee: Beijing Summer Sprout Technology Co Ltd
Current assignee: Beijing Summer Sprout Technology Co Ltd
Priority date: 2020-06-30
Filing date: 2020-06-30
Publication date: 2022-12-20
Anticipated expiration: 2040-06-30
Also published as: CN111725253A

Abstract

Disclosed is an electronic integrated device comprising: first and second substrates, a thin film photovoltaic device (TFPV), and an organic electroluminescent device (OLED); the TFPV and the OLED are respectively arranged on a first substrate and a second substrate, the TFPV comprises a first electrode and a second electrode, the contact surface of the first electrode and the first substrate is a first surface, and the second electrode is arranged on the first electrode; the OLED comprises a third electrode and a fourth electrode, the contact surface of the third electrode and the second substrate is a second surface, and the fourth electrode is arranged on the third electrode; the first and second substrates are physically connected; the included angle between the direction from the first electrode to the second electrode and the direction from the third electrode to the fourth electrode is less than 90 degrees, and the vertical projection areas of the first surface and the second surface are not coincident completely; the minimum lateral distance between the first and third electrodes is not more than 5mm. The TFPV can absorb ambient light and light emitted by the OLED and convert the light into electric energy to recycle the light energy.

Description

Electronic integrated device and manufacturing method thereof

Technical Field

The invention relates to an electronic integrated device and a manufacturing method thereof. And more particularly, to an electronic integrated device integrating a thin film photovoltaic device and an organic electroluminescent device, and a method of manufacturing the electronic integrated device.

Background

An organic electroluminescent device (OLED) is formed by stacking a cathode, an anode, and organic layers between the cathode and the anode, converts electrical energy into optical energy by applying a voltage across the cathode and the anode of the device, and has advantages of wide angle, high contrast, and faster response time. During the last decades, researchers have conducted a great deal of research to obtain high efficiency devices, and OLED devices using phosphorescence have achieved nearly 100% Internal Quantum Efficiency (IQE). However, due to the refractive index mismatch between the different film layers, a large amount of light is totally reflected or absorbed at the interface, resulting in an External Quantum Efficiency (EQE) of a typical OLED of only between 20% -30%. Jinouk Song et al reported that the loss of light inside the device can be generalized to the following modes due to the multilayer structure of the OLED: "substrate mode" means that total reflection is confined within the substrate due to the refractive index of air (1.0) being less than the refractive index of the substrate (glass 1.5) during the escape of light from the thin film OLED into the air, and the substrate mode light occupies about 30% of the total number of radiation photons of the organic layer. By "waveguide mode" is meant that light emitted from the light-emitting layer of the OLED reaches the interface of the transparent electrode and the substrate, and total reflection is confined in the organic thin film due to the substrate's refractive index (glass 1.5) which is typically smaller than the transparent electrode (ITO 2.0), and the waveguide mode light accounts for about 30% of the total number of radiation photons from the organic layer. In addition, there is a loss of light in the plasma mode at the interface of the organic layer and the metal cathode layer. Therefore, it has been a concern of researchers how to extract the light energy trapped inside the OLED device.

Solar cells or photovoltaic cells are devices that convert light energy (especially solar radiation) into electrical energy by the photovoltaic effect of a material. In recent years, thin film photovoltaic devices (TFPV), such as organic solar devices (OPV), have been rapidly developed due to their advantages of high efficiency, low cost, easy preparation, etc., and their external quantum efficiency can reach 18%; the photoelectric conversion efficiency of the perovskite solar device is rapidly improved since the report, the external quantum efficiency of the current laboratory device reaches 24.2 percent, and the perovskite solar device can be comparable to the commercialized silicon-based solar cell technology. Thin film photovoltaic devices, which can efficiently convert low intensity light in an indoor environment into megawatt to microwatt power, are recognized as ideal options for driving low power devices. The indoor organic solar device developed by Yong Cui and the like can generate electricity in rooms such as living rooms, offices and libraries, and the OPV device is irradiated by an LED lamp (1000 illuminance), so that the conversion efficiency is higher by 26%. Compared with an inorganic LED, the OLED has wide spectrum, can emit light at 380nm-1000nm, can convert absorbed OLED light into electric energy by utilizing the light absorption characteristic of a TFPV device to realize the recycling of light energy, and has great significance for energy conservation and environmental protection.

The OLED and TFPV devices generally use glass or other transparent materials as a substrate, and also include transparent conductive oxides such as ITO as an anode, and other functional layers are usually formed by vacuum thermal evaporation or solution spray printing. Therefore, the two types of devices have strong compatibility in materials and preparation processes. There are some prior arts disclosing a manufacturing method, a lighting device or a display device combining OPV and OLED devices.

CN106058052A discloses an integrated system based on thin film power generation, energy storage, and light emission, which combines an OPV device, an OLED device, and a super capacitor, and the invention intends to actually convert solar energy into electric energy by using OPV to drive the OLED device to emit light or serve as a power supply device. In addition, the application emphasizes that the OLED device and the OPV device are fabricated on the same plane of the same substrate, and makes clear mention of the role of OPV in converting solar energy into electrical energy, while defining the photovoltaic device as OPV.

US10453904B2 discloses an active matrix display device, which adopts a multilayer longitudinal stack structure, in which an OLED device and an OPV device are respectively disposed on two substrates, a semitransparent OLED device is vertically disposed on the OPV device, and an air gap exists between the OLED device and the OPV device, such a device arrangement way that the OPV can only absorb light emitted from the OLED, but cannot utilize light that may be lost inside the OLED. Meanwhile, the OLED device therein is double-sided light emitting, resulting in a great reduction in its light emitting efficiency.

CN105307304A discloses an OPV driven OLED light source and a preparation method thereof, wherein the OPV collects sunlight, converts light energy into electric energy through a controller and supplies power to an OLED, and the electric energy is stored in an OPV controller and a memory, and the stored energy can be released again to drive the OLED, thereby realizing that the OPV drives the OLED light source to emit light. However, in this patent application, the OPV and OLED components are connected by a common electrode layer, and together form two parts of a device, which is a stacked device structure. US20190006425A1 discloses a lighting assembly using both OLEDs and OPVs in combination, wherein each OLED pixel is combined with an OPV device, also in a multilayer longitudinal stack, the OPV and the OLEDs being electrically connected, the OPV absorbing solar energy to generate electrical energy to power the OLEDs. The preparation method, the lighting device or the display panel all adopt a superposition structure of the OPV and the OLED, solar energy or ambient light is converted into electric energy by using the OPV and the electric energy is supplied to the OLED, but the superposition structure has a complex process and high cost, and the OPV does not utilize light possibly lost in an OLED device.

US20140225090A1 discloses an OLED display device having a solar cell device disposed in a region defined by boundaries between pixel points and pixel points of the OLED, but the solar cell device is disposed either under an opaque electrode of the OLED device, the opaque electrode of the OLED device being spaced from the electrode of the solar cell device by an insulating layer; or the opaque electrode (bottom electrode) of the OLED device and one electrode of the solar cell are on the same horizontal plane, but the subsequent functional layers are respectively prepared in opposite directions on the horizontal plane, so that the solar cell device can only absorb external ambient light and cannot utilize light emitted by the OLED due to the arrangement positions of the OLED device and the solar cell in the two cases. The solar cell can also be arranged above the OLED device, but actually is arranged above the packaging sheet on the light-emitting side of the prepared OLED device, and the arrangement of the device structure ensures that the light of the OLED can be emitted only after passing through the solar cell device, so most of the light is lost in the solar cell device, therefore, the invention aims to arrange some solar cell devices among OLED pixel points to absorb sunlight or ambient light, and supply power to the OLED if necessary to realize the effective utilization of energy.

Takayuki Chiba et Al report a dual-mode OLED-OPV device, which adopts a longitudinal superposition structure, the bottom of the device is an OPV device, an OLED device is arranged on the OPV device, the OPV and the OLED device are connected through a layer of thin metal Ag/Ag: al, and the top of the OLED is provided with a semitransparent electrode Mg: ag. The same OPV is also used to convert solar energy into electrical energy to power the OLED, so the device structure and the function to be realized are different from the present invention.

Based on the above, the present invention provides an electronic integrated device integrating a thin film photovoltaic device and an organic electroluminescent device through the intensive research of the inventors.

Disclosure of Invention

In view of the above problems, the present invention aims to provide an electronic integrated device integrating a thin film photovoltaic device and an organic electroluminescent device.

According to an embodiment of the present invention, there is disclosed an electronic integrated device characterized by including: a first substrate, a second substrate, at least one thin film photovoltaic device (TFPV) and at least one organic electroluminescent device (OLED);

at least one TFPV is arranged on the first substrate, the TFPV comprises a first electrode and a second electrode, the first electrode is in direct contact with the first substrate, the contact surface of the first electrode and the first substrate is a first surface, and the second electrode is arranged on the first electrode;

the OLED is arranged on the second substrate, the OLED comprises a third electrode and a fourth electrode, the third electrode is in direct contact with the second substrate, the contact surface of the third electrode and the second substrate is a second surface, and the fourth electrode is arranged on the third electrode;

the first substrate and the second substrate are physically connected;

an included angle formed by the direction from the first electrode to the second electrode and the direction from the third electrode to the fourth electrode is smaller than 90 degrees, and the vertical projection areas of the first surface and the second surface are not coincident;

the minimum lateral distance between the first electrode and the third electrode is no greater than 5mm.

According to an embodiment of the present invention, there is disclosed a method for manufacturing an electronic integrated device, including:

providing a first substrate;

providing a first electrode on one side of the first substrate; the contact surface of the first electrode and the first substrate forms a first surface;

providing a second substrate;

a third electrode is arranged on one side of the second substrate, and the contact surface of the third electrode and the second substrate forms a second surface;

the first substrate and the second substrate are connected by a physical connection;

a second electrode is arranged on the first electrode, and a light absorption layer of the TFPV device is arranged between the first electrode and the second electrode;

a fourth electrode is arranged on the third electrode, and a light emitting layer of the OLED device is arranged between the third electrode and the fourth electrode;

an included angle formed by the direction from the first electrode to the second electrode and the direction from the third electrode to the fourth electrode is smaller than 90 degrees, and the vertical projections of the first plane and the second plane are not coincident;

The invention provides an electronic integrated device integrating a TFPV (pulse width modulation) device and an OLED (organic light emitting diode), which is characterized in that a thin film photovoltaic device effectively absorbs light in a substrate mode and a waveguide mode inside the OLED and converts the light into electric energy to realize the recycling of the light energy by designing the plane layout relationship of the TFPV device and the OLED device. The thin film photovoltaic device in the electronic integrated device structure can not only absorb ambient light, including but not limited to sunlight, but also absorb light in an OLED waveguide mode and a substrate mode.

Drawings

FIGS. 1a-1c are schematic diagrams of a typical OLED device and an optical waveguide.

Fig. 2a-2d are top and cross-sectional views of an electronic integrated device in accordance with the present invention.

Fig. 3a-3c are top views of an electronic integrated device in accordance with the present invention.

Fig. 4a-4c are top and cross-sectional views of another electronic integrated device in accordance with the present invention.

FIGS. 5a-5b are schematic diagrams of an electronic integrated device that can be combined in the present invention.

Fig. 6 is a schematic circuit control diagram of the electronic integrated device of the present invention.

Detailed Description

As used herein, "top" means furthest from the substrate, and "bottom" means closest to the substrate. In the case where the first layer is described as being "disposed on" the second layer, the first layer is disposed closer to the substrate. Conversely, where a first layer is described as being "disposed" under a second layer, the first layer is disposed closer to the substrate. Other layers may be present between the first and second layers, unless it is specified that the first layer is "in contact with" the second layer. For example, a cathode can be described as being "disposed on" an anode even though various organic layers are present between the cathode and the anode.

As used herein, "physically joined" refers to joining two parts together by adhering with an adhesive, direct contact, melting to form a unified system, and the like. For example, the first substrate and the second substrate may be combined together by, but are not limited to, bonding with an adhesive, direct contact, melting to form a unified system, and the like. The physical connection referred to in the present invention does not include a connection method using only electrical connection but does not constitute the above-described contact, but may include a method of further including electrical connection in addition to the above-described contact method. The same substrate can also be considered to be composed of the first substrate and the second substrate through physical connection.

As used herein, the term "the vertically projected areas are completely misaligned" refers to the shadow areas created assuming parallel light strikes the top of the first or second surface vertically are completely misaligned.

As used herein, "direction of the first electrode to the second electrode" refers to assuming that a point is selected as a starting point at the first electrode, from which a ray is drawn perpendicular to the first electrode and directed towards the second electrode, the direction of the ray representing the direction of the first electrode to the second electrode; likewise, the term "direction of the third electrode to the fourth electrode" refers to assuming that a point is selected as a starting point at the third electrode, from which a ray is drawn perpendicular to the third electrode and directed towards the fourth electrode, the direction of the ray indicating the direction of the third electrode to the fourth electrode.

As used herein, the term "OLED device" includes an anode layer, a cathode layer, one or more organic layers disposed between the anode layer and the cathode layer. An "OLED device" may be bottom emitting, i.e. emitting light from the anode layer side, or top emitting, i.e. emitting light from the cathode layer side, or a transparent device, i.e. emitting light from both the anode layer and the cathode layer.

As used herein, the term "Thin-film photovoltaic device" or "Thin-film photovoltaicaic (TFPV)" refers to a photovoltaic device in the form of a Thin film, including, but not limited to, perovskite photovoltaic devices, organic photovoltaic devices (OPVs), dye-sensitized photovoltaic devices, thin-film silicon-based photovoltaic devices, copper indium gallium selenide Thin-film solar cells, cadmium telluride Thin-film solar cells, amorphous silicon photovoltaic devices, and the like.

As used herein, the term "energy storage device" refers to a device that can store electrical energy, including, but not limited to, capacitors, batteries, lithium batteries, and the like.

As used herein, the term "substrate mode" of light refers to the fact that when light emitted from the light-emitting layer of an OLED device reaches the substrate-air interface, total reflection is confined within the substrate due to the refractive index of air (1.0) being generally less than the refractive index of the substrate (glass 1.5).

As used herein, the term "waveguide mode" light refers to light emitted from the light emitting layer of an OLED device that reaches the interface of the transparent electrode and the substrate, with total reflection confined in the organic thin film due to the substrate's index of refraction (glass 1.5) typically being less than the transparent electrode (ITO 2.0).

As used herein, the term "continuous" refers to physical connections between the film layers, rather than being independent, i.e., any two points in the film layers between which at least one path may exist and all points in the path fall within the film layer.

As used herein, the term "external electrically driven device" may be a power plug, but may also be other devices capable of providing power, such as a battery, a USB interface (e.g., a USB fabric, a Micro-USB interface, a Type-C interface, etc.), a wireless charging device (e.g., an electromagnetic induction charging device, a magnetic field resonance charging device, a radio frequency wireless charging device, etc.). The "external electric drive device" may further comprise a circuit control device including a CPU, a microprocessor, a chip, an FPC board, a memory.

As used herein, the term "minimum lateral distance" refers to the minimum lateral distance that is the minimum length of a line segment formed by the perpendicular projection of the line connecting two points, at each selected point on the adjacent sides of the first electrode and the third electrode.

According to an embodiment of the present invention, there is disclosed an electronic integrated device characterized by including: a first substrate, a second substrate, at least one thin film photovoltaic device (TFPV), and at least one organic electroluminescent device (OLED);

the OLED comprises a third electrode and a fourth electrode, the third electrode is in direct contact with the second substrate, the contact surface of the third electrode is a second surface, and the fourth electrode is arranged on the third electrode;

the first substrate and the second substrate are physically connected;

an included angle formed by the direction from the first electrode to the second electrode and the direction from the third electrode to the fourth electrode is smaller than 90 degrees, and the vertical projection areas of the first surface and the second surface are not overlapped completely;

According to an embodiment of the invention, the first and third electrodes are both anodes and the second and fourth electrodes are both cathodes.

According to an embodiment of the present invention, the first electrode and the third electrode are identically or differently selected from ITO, IZO, metal oxide, graphene/carbon nanotube composite film, or a combination thereof.

According to an embodiment of the invention, the second and fourth electrodes are selected from Al, ag, mg, yb, moOx, or a combination thereof, the same or different.

According to one embodiment of the invention, the first substrate and the second substrate are connected by physical connection to form a continuous same substrate.

According to an embodiment of the invention, the first and third electrodes are continuous, or the second and fourth electrodes are continuous.

According to one embodiment of the present invention, the electronic integrated device further comprises an adhesive glue disposed between the first substrate and the second substrate.

According to one embodiment of the invention, the refractive index of the adhesive glue after curing is between 1.2 and 2.4.

According to one embodiment of the present invention, the difference between the refractive index of the adhesive glue after curing and the refractive index of at least one of the first substrate and the second substrate is within ± 10%.

According to one embodiment of the invention, the first substrate and the second substrate are physically connected by an adhesive glue.

According to one embodiment of the invention, the first surface and the second surface are of the same height.

According to one embodiment of the invention, the first surface is at least 80nm higher than the second surface.

According to one embodiment of the invention, the first and second substrates are transparent substrates.

According to one embodiment of the present invention, the electronic integrated device further comprises an energy storage device electrically connected to the TFPV and/or the OLED.

According to one embodiment of the present invention, the energy storage device includes, but is not limited to, a capacitor, a battery, a lithium battery, and the like.

According to one embodiment of the invention, the electronic integrated device further comprises an external electric drive.

According to an embodiment of the present invention, the external electric drive may be a power plug, or may be other devices capable of providing power, such as a battery, a USB interface (e.g., USB configuration, micro-USB interface, type-C interface, etc.), a wireless charging device (e.g., an electromagnetic induction charging device, a magnetic resonance charging device, a radio frequency wireless charging device, etc.).

According to one embodiment of the invention, the external electrically driven device further comprises a circuit control device.

According to one embodiment of the invention, the circuit control device comprises one or more of a CPU, a microprocessor, a chip, an FPC circuit board and a memory.

According to one embodiment of the invention, the TFPV and OLED further comprise an encapsulation layer, and the encapsulation layer of the TFPV and the encapsulation layer of the OLED are continuous or independent.

According to one embodiment of the invention, the TFPV comprises one or more of a perovskite thin film photovoltaic, an organic thin film photovoltaic device, a copper indium gallium selenide thin film solar cell, a cadmium telluride thin film solar cell, an amorphous silicon photovoltaic device, a dye sensitized photovoltaic device.

According to one embodiment of the invention, the TFPV surrounds the OLED device in a ring layout.

According to an embodiment of the invention, the first electrode and the third electrode each comprise a long side and a short side.

According to one embodiment of the present invention, the first electrode and the third electrode each include a long side and a short side, and the long side of the first electrode is not adjacent to the short side of the third electrode.

According to one embodiment of the present invention, when the ratio of the long side to the short side of the third electrode is greater than 5.

According to an embodiment of the invention, the length of the side of the shortest side of the first electrode is 2mm or more.

According to one embodiment of the invention, the thin film transistor further comprises an insulating dielectric layer disposed between the TFPV and the OLED.

According to an embodiment of the present invention, a difference between a refractive index of the insulating medium layer and a refractive index of at least one of the first electrode, the third electrode, and the substrate is within ± 5%.

According to one embodiment of the invention, the refractive index of the insulating medium layer is between 1.2 and 2.4.

According to one embodiment of the invention, the refractive index of the insulating medium layer is between 1.5 and 2.2.

According to one embodiment of the invention, the refractive index of the insulating medium layer is between 1.8 and 2.0.

According to an embodiment of the invention, the minimum lateral distance between the first electrode and the third electrode is not more than 5mm.

According to an embodiment of the invention, the minimum lateral distance between the first electrode and the third electrode is not more than 3mm.

According to an embodiment of the invention, the minimum lateral distance between the first electrode and the third electrode is not more than 1mm.

According to an embodiment of the present invention, there is also disclosed a method for manufacturing an electronic integrated device, including:

providing a first substrate;

arranging a first electrode on one side of the first substrate, wherein the contact surface of the first electrode and the first substrate forms a first surface;

providing a second substrate;

the first substrate and the second substrate are connected through physical connection;

According to an embodiment of the present invention, wherein the first electrode and the third electrode are anodes and the second electrode and the fourth electrode are cathodes in the preparation method.

According to an embodiment of the present invention, the first substrate and the second substrate are physically connected to form a continuous substrate.

According to an embodiment of the present invention, wherein the first electrode and the third electrode or the second electrode and the fourth electrode are continuous in the manufacturing method.

According to an embodiment of the present invention, the preparation method further comprises providing an adhesive.

According to an embodiment of the present invention, wherein a difference between a refractive index of the adhesive paste after curing and a refractive index of at least one of the first substrate and the second substrate in the preparation method is within a range of ± 10%.

According to an embodiment of the present invention, wherein the first substrate and the second substrate are physically connected by an adhesive glue in the manufacturing method.

According to an embodiment of the invention, wherein the first electrode and the third electrode are prepared simultaneously and/or the second electrode and the fourth electrode are prepared simultaneously in the preparation method.

According to an embodiment of the invention, the TFPV is arranged in a ring layout around the OLED in the manufacturing method.

According to an embodiment of the invention, an insulating medium layer is further provided in the preparation method, and the insulating medium layer is arranged between the TFPV and the OLED.

According to an embodiment of the present invention, wherein the first surface and the second surface have the same height in the manufacturing method.

According to an embodiment of the invention, wherein the first surface is at least 80nm higher than the second surface in the preparation method.

Due to the compatibility of the materials and the manufacturing process, the OLED device and the TFPV device can be easily manufactured on the same substrate, and the same transparent conductive material is used as the anode. Therefore, under the reasonable layout design, the light trapped in the substrate mode and the waveguide mode in the OLED device can be extracted by the thin-film photovoltaic device and further converted into electric energy. If the thin film photovoltaic unit is connected with the energy storage device, the part of electric energy can be stored, and power can be supplied to the OLED device when needed, so that the luminous efficiency is indirectly improved.

FIG. 1 is a schematic diagram of a typical OLED device and optical waveguide. According to classical ray optics theory, the difference in refractive index between glass substrate and ITO/organic material results inOnly a small fraction of the light exits the substrate and the remaining majority is trapped in the glass substrate and device, either in the substrate mode or in the waveguide mode. As shown in FIG. 1a, the refractive index n of air _air 1, assume that the refractive index n of the glass substrate 301 _sub Is 1.5, refractive index n of the transparent anode 302 _ITO Is 2, refractive index n of the organic layer 303 _OL 1.85, 304 is a metal cathode, so the critical angle α at the substrate 301/air interface ₁ And critical angle alpha at the transparent anode 302/substrate 301 interface ₂ Respectively calculated as:

α ₁ ＝arcsin(n _air /n _OL )≈33°，α ₂ ＝arcsin(n _sub /n _OL )≈54°。

the light generated by an OLED can be divided into three parts:

1) When alpha is more than or equal to 0 degree and less than or equal to alpha ₁ Light may be emitted from the device into the air. Assuming that the light emitted from the OLED is isotropic and totally reflected after reaching the metal cathode 304, the proportion of the light (1) emitted from the glass substrate 301 can be estimated according to equation (1):

2) A substrate mode. When alpha is ₁ ≤α≤α ₂ Then, the light is limited to 301, and the proportion of the light (2) can be calculated by equation (2):

3) ITO/organic mode (waveguide mode). When alpha is ₂ When alpha is less than 90 degrees, the light ray (3) is totally reflected at the interface of 301 and 302, the part of light is limited in 302, and the proportion of light can be calculated by equation (3):

we have calculated the furthest lateral distance that the light of the substrate mode and waveguide mode of the OLED device can reach. FIG. 1b is a cross-sectional view of an integrated electronic device, 2 representing a TFPV device, 3 representing an OLED device, wherein the TFPV device shares a substrate 401 with the OLED, 401a is the area occupied by the OLED device, 401b is the area occupied by the TFPV device, d ₁ Is the thickness of the substrate; 31 is an OLED device anode, 601 is an organic functional layer and a metal cathode, not specifically shown here, disposed on anode 31; 21 is the anode of the TFPV device and 602 is an organic functional layer and a metal cathode, not specifically shown, disposed on the anode 21. d is the separation distance between the TFPV device 2 and the OLED device 3. In principle, in order to reduce the loss of light in a medium, the closer the distance d between the OLED and the TFPV is, the better the process can achieve, the more advanced the photolithography process can achieve the accuracy of nanometer level, while the photolithography process generally applied to OLED display or illumination can also achieve the accuracy of micrometer level, and the accuracy of dozens of micrometers can also be achieved at present by using a metal mask. The spacing d should therefore be less than 5mm, preferably less than 3mm, more preferably less than 1mm.

When alpha is ₁ ≤α≤α ₂ When the light is confined in the substrate 401, the light (1) is incident at an angle α, refraction occurs at the interface between the anode 31 and the substrate 401, the refracted light (2) reaches the bottom of the substrate 401 and is totally reflected, and the reflected light is (3).

We simulated the calculation of the farthest lateral distance L that can be reached in an optical substrate in substrate mode ₁ ：

Assume that 1: n is a radical of an alkyl radical _sub ＝1.5，n _OL =1.85, substrate thickness d ₁ 0.7mm, the critical angle of the light at the anode and the substrate can be calculated as α = arcsin (n) _sub /n _OL ) =54 °, when an incident light ray is incident at an incident angle α =54 ° and at the boundary of the OLED device anode 31 and substrate 401 interface (as in fig. 1 b), then the farthest lateral distance that the substrate mode light exiting the OLED can reach is L ₁ ＝2d ₁ tan[arcsin(n _sub /n _OL )]2 × 0.7 × 1.38=1.9mm, the optimal side length of the TFPV device is (1.9-d) mm;

assume 2: n is a radical of an alkyl radical _sub Is 1.65 (refractive index of flexible film PET), thickness d ₁ 0.05mm, the furthest distance that the substrate mode light can reach for exiting the OLED is 2d ₁ tan[arcsin(n _sub /n _OL) ]＝2*0.05*2.35＝0.24mm；

From the above calculations, it can be seen that the substrate-mode light emitted from the OLED can reach the thickness d of the light and substrate at the farthest lateral distance ₁ Proportional to the refractive index of the substrate and the refractive index of the organic layer, n _sub /n _OL The larger the ratio, the farther the light from the OLED reaches, but typically the refractive index of the substrate is between 1.5 and 1.8 and the thickness of the substrate is between 0.05-0.7mm, so the calculated farthest lateral distance L that the light in OLED substrate mode can reach is calculated ₁ About 2mm, the length of the side length of the actual TFPV device is at least L ₁ -d. Assuming that d =0, the side length of the TFPV device is set to L ₁ Then the minimum side length of the TFPV device is 2mm.

The second case is: as shown in fig. 1c, the OLED device shares an anode with the TFPV device, i.e., OLED device anode 31 is continuous with TFPV device anode 21, and OLED device 3 is still spaced apart from TFPV device 2 by a distance d. When the incident angle alpha ₂ Alpha is more than or equal to 90 degrees, the light (1) is totally reflected at the interface of the anode 31 and the anode 401, the light is limited in the anode 31 of the OLED device, d ₂ For the anode thickness, when an incident ray exits from the boundary at the interface of the substrate 401 and the OLED device anode 31 at an incident angle α (α approaching 90 °), then the waveguide mode light exiting the OLED can reach a maximum distance L ₂ ＝2d ₂ tan α (α approaches 90 °), then theoretically the ray can reach infinity. Assuming a =89 ° (a small fraction of the light between 89 ° and 90 ° is negligible), the anode thickness d ₂ 0.12 μm, then L ₂ ＝2d ₂ tan α =2 × 0.12 × tan89 ° =13.7 μm,13.7 μm is far smaller than the distance that can be reached by light of the substrate mode, and the TFPV device has an optimal side length of (13.7-d) μm, which is far smaller than the distance that can be reached by light of the substrate mode.

Based on the above two cases, we consider the TFPV device to have a side length of at least 2mm. Of course, the longer the side length of the TFPV device, the more ambient light is absorbed, and this portion of the light can be converted into electrical energy to drive the OLED device.

The working principle of the electronic integrated device is specifically described by using several embodiments.

Example 1

Fig. 2a is a top view of an electronic integrated device 100 according to the present invention, 2 representing a TFPV device, 3 representing an OLED device, 5 representing an insulating dielectric layer (optional, not necessary), and 4 representing an energy storage device (optional, not necessary). Fig. 2b-2d are various cross-sectional illustrations of the device 100 shown in fig. 2a along the cut line AA'. As can be seen from the top view of fig. 2a, the OLED is in the middle of the substrate, and the TFPV surrounds the OLED for receiving the light generated by the OLED in all directions and confined in the substrate.

As shown in fig. 2b, an electronic integrated device 100 according to embodiment 1 of the present invention includes a substrate 110, a TFPV device 2, an OLED device 3, an energy storage device 4, and an insulating medium layer 5; specifically, the TFPV device 2 and the OLED device 3 are both disposed on the same substrate and on the same side of the substrate, and the first substrate of the TFPV and the second substrate of the OLED are the same continuous substrate 110. The contact surface 1101 of the first substrate and the first electrode 21 is a first surface, the contact surface 1102 of the second substrate and the third electrode 31 is a second surface, and the vertical projection areas of the first surface and the second surface are not coincident. The direction of the first electrode 21 and the second electrode 25 and the direction of the third electrode 31 and the fourth electrode 35 form an angle of 0 deg. and less than 90 deg., and in order to extract as much light as possible from the substrate mode and the waveguide mode of the OLED device, the closer the OLED device and the TFPV device, the better, for example, no more than 5mm, preferably, no more than 3mm, and more preferably, no more than 1mm. The energy storage device 4 is electrically connected to the TFPV device 2 (not shown) and stores electrical energy generated by the TFPV device 2.

The substrate 110 may be a glass or quartz substrate, or may be a flexible substrate including, but not limited to, thin film glass, PET, PEN, PI, etc., and the substrate 110 is transparent. The TFPV device 2 includes a first electrode 21, the first electrode 21 may be a transparent anode made of ITO, IZO, etc., and a first surface is formed by a contact surface of the substrate 110 and the first electrode 21, a hole transport layer 22 is disposed on the first surface, and a light absorption layer 23, an electron transport layer 24, and a second electrode 25 are sequentially disposed thereon, and the second electrode 25 may be Al, ag, or other metal suitable for being used as a cathode. The light absorbing layer 23 may be an inorganic layer such as CIGS, cdTe, amorphous silicon, an organic layer, a dye sensitized layer, or a perovskite material. The OLED device 3 includes a third electrode 31, the third electrode 31 may be a transparent anode made of ITO, IZO, etc., a second surface is formed by the substrate 110 and the third electrode 31, a hole injection layer 32a is disposed on the third electrode, and a hole transport layer 32b, a light emitting layer 33, an electron transport layer 34a, an electron injection layer 34b, a fourth electrode 35, and the fourth electrode 35 may be a metal suitable for a cathode, such as Al, ag, mg, or a combination thereof. Wherein the first electrode 21 and the third electrode 31 are independently unconnected, and the second electrode 25 and the fourth electrode 35 may be independently unconnected. The second electrode 25 and the fourth electrode 35 may also be connected, as is the electrode 35 in the configuration 200 shown in fig. 2c, which has the advantage of a simplified process preparation, as will be further elucidated below. The first electrode and the third electrode may be of the same material, such as ITO, and the first electrode 21 and the third electrode 31 may be prepared in the same step, such as sputtering and/or photolithography, as shown for the electrode 21 in the configuration shown in fig. 2 d; similarly, the second electrode 25 and the fourth electrode 35 may be made of the same material, such as Al, or may be fabricated in the same process step, such as vacuum thermal evaporation, and patterned using a mask. Note that to avoid electrical cross talk, the TFPV device and the OLED device cannot be co-anodic and co-cathodic at the same time, i.e., can be co-anodic but not co-cathodic, co-cathodic but not co-anodic, or neither co-anodic nor co-cathodic. The OLED device 3 may emit light with a peak wavelength between 380-1000 nm. An encapsulation layer 36 is provided over the second electrode 25 and the fourth electrode 35. The encapsulation layer 36 may be a glass cover package, which may be glass adhered to the device by UV-cured glue, or a thin film encapsulation layer formed by PECVD, ALD printing, spin coating, etc., and has a thickness of typically more than 10 μm, such as a single inorganic layer or a thin film organic-inorganic alternating multilayer structure. The OLED device 3 and the TFPV device 2 may be packaged separately (not shown), or the OLED device 3 and the TFPV device 2 may be packaged together, i.e., forming a continuous encapsulation layer 36, as shown in fig. 2b-2 d. The insulating dielectric layer 5 may be a semiconductor dielectric layer such as silicon nitride or silicon oxide, or an organic material such as a macromolecular polymer PI (polyimide), preferably a transparent material, and has the same refractive index as at least one of the first electrode 21 and the third electrode 31 or the same refractive index as the substrate. The refractive index of the insulating medium layer 5 is between 1.2 and 2.4, preferably between 1.5 and 2.2, and more preferably between 1.8 and 2.0. The insulating medium layer 5 is arranged between the two devices, and is used for isolating the OLED and the TFPV device to prevent series connection of films in the preparation process from influencing the preparation yield, and the difference between the refractive index and at least one of the first electrode 21 or the third electrode 31 or the substrate is not more than 5% to reduce the loss of light rays in the air. When the OLED device and the TFPV device are closer to each other, i.e., less than or equal to 5mm, it is preferable that the insulating dielectric layer 5 is disposed between the OLED and the TFPV, but the insulating dielectric layer is not essential, especially when the OLED device and the TFPV device are far apart from each other, e.g., more than 5mm. The energy storage device is not necessary, and the TFPV device can directly supply power to the OLED by absorbing the electric energy generated by the ambient light; preferably, the energy storage device is configured to store excess electrical energy generated by the TFPV and, if necessary, to power the OLED or other small appliance. The energy storage device 4 is electrically connected with the TFPV device 2 and used for storing electric energy generated by the TFPV device 2, the energy storage device can also be electrically connected with the OLED device 3 and used for electric drive, and the energy storage device can be a capacitor, a storage battery, a lithium battery and the like.

In example 1, the OLED device may be first powered by an external electric drive (not shown), or by direct power supply to the OLED device through the TFPV device absorbing ambient light to generate electrical energy or by an energy storage device to power the OLED device. The external electric driving device may be a power plug, or may be other devices capable of providing power, such as a battery, a USB interface (e.g., a USB structure, a Micro-USB interface, a Type-C interface, etc.), a wireless charging device (e.g., an electromagnetic induction charging device, a magnetic resonance charging device, a radio frequency wireless charging device, etc.). The external electric drive may further comprise circuit control means including a CPU, a microprocessor, a chip, FPC circuit board, memory. As shown in FIG. 2b, a portion of the high angle light (1) emitted from the light-emitting layer 33 enters the substrate 110, assuming that the incident angle α of the light (1) satisfies α ₁ ≤α≤α ₂ Then the light (1) is totally reflected at the bottom of the substrate 110 and the air interface and confined in the substrate, and this part of the light can enter the first electrode 21 of the TFPV device due to the shared substrate and then be absorbed by the light absorbing layer 23 of the TFPV device. The light (2) emitted from the light-emitting layer has an incident angle alpha satisfying alpha ₂ Alpha is more than or equal to 90 degrees, light (2) is emitted from the side surface of the third electrode 31 of the OLED device 3, enters the insulating layer 5, reaches the side surface of the first electrode 21 of the TFPV device, enters the first electrode 21 and is absorbed by the light absorption layer 23 of the TFPV device. Note that the rays (1) and (2) drawn here are merely examples, and as long as the rays satisfying the above-described incident angle condition are likely to be absorbed by the TFPV device 2. The light absorption layer 23 of the TFPV device absorbs incident light to generate excitons, generates photo-generated current through transmission, dissociation and charge collection, and stores electric energy in the energy storage device 4 through electrical connection with the energy storage device 4. The part of electric energy can supply power to the OLED device when needed, so that the luminous efficiency is indirectly improved. Theoretically, the OLED device 3 and the TFPV device 2 are as close as possible as the process conditions allow, so as to reduce the loss of light due to multiple refractions within the substrate 110 and the loss of light in the air. Alternatively, an insulating dielectric layer having a refractive index at least equal to or greater than that of the substrate may be applied between the OLED device 3 and the TFPV device 2, and preferably, the insulating dielectric layer has a refractive index within ± 5% of that of at least one of the first electrode 21, the third electrode 31, and the substrate.

The device structure shown in fig. 2d is substantially similar to that shown in fig. 2b, except that the OLED device 3 shares one electrode with the TFPV device 2, i.e. the first electrode 21 and the third electrode 31 are continuous, preferably both the first electrode and the third electrode are anodes. As shown in FIG. 2d, a portion of the same high angle light (1) emitted from the light-emitting layer 33 enters the substrate 130, assuming that the incident angle α of the light (1) satisfies α ₁ ≤α≤α ₂ Then the light (1) is totally reflected at the bottom of the 110 substrate and the air interface and is confined in the substrate, and this part is due to the shared substrateLight may enter the third electrode 31 (here, the first electrode 21) of the TFPV device 2 and be absorbed by the light absorbing layer 23. Unlike fig. 2b, at this time, the light (2) emitted from the light-emitting layer has an incident angle α satisfying α due to the common first electrode 21 ₂ And alpha is more than or equal to 90 degrees, the light (2) is reflected at the interface of the first electrode 21 and the substrate 130, and the reflected light enters the first surface formed by the contact surface of the substrate 130 and the first electrode 21, and then can enter the interior of the TFPV device and be absorbed by the light absorption layer 23.

The TFPV device preferably surrounds the OLED device in an annular layout, as shown in fig. 2a, or 2 TFPV devices in L-shaped layouts surround the OLED device, as shown in fig. 3a, which is a device 700, and can also absorb light in the substrate mode and waveguide mode emitted from the periphery of the OLED device. Typically, the cathode is not patterned in a circular pattern when fabricated using a metal mask, so figure 3a can solve the problem of cathode fabrication without loss of absorptivity. Moreover, the layout has a smaller light-emitting area than a single TFPV device with a layout of 100 as shown in FIG. 2a, the manufacturing is easier, and the production yield can be improved. In some embodiments, the light emitting area of the OLED device may be rectangular, with an aspect ratio of at least greater than 1, preferably greater than 5, and as shown in fig. 3b for device 800, the tfpv device may be placed on both sides of the long side of the light emitting area of the OLED device, sacrificing a small portion of the light on both sides of the short side, which may further simplify the fabrication process, reduce cost, and improve production yield. In other embodiments, such as device 900 shown in fig. 3c, the tfpv device may be divided into four

separate devices

2a, 2b, 2c, 2d surrounding the OLED device, which may also simplify the fabrication process and maximize the use of the light emitted by the OLED device.

Example 2

Fig. 4a is a top view of an integrated electronic device 400 according to the present invention, 2 representing a TFPV device, 3 representing an OLED device, 4 representing an energy storage device, and 5 representing an insulating dielectric layer. Fig. 4b and 4c are various cross-sectional views of the device 400 of fig. 4a along the tangent line BB', the contact surface of the first electrode 21 and the substrate 140 forms the first surface 1401 of the electronic integrated device 400, the third electrode 31 and the substrate 140 form the second surface 1402 of the electronic integrated device, 140a is the active area of the

TFPV device

2, and 140b is the active area of the OLED device 3. The difference with fig. 2b in example 1 is that the first surface is at least 80nm higher than the second surface, the anode thickness is typically around 80-200nm, and the first surface is at least one anode thickness higher than the second surface, so that the light emitted from the OLED after reflection at 1402 can enter 1401 through the dielectric layer 5, as shown by ray (2) in fig. 4b, in fact the substrate thickness of a typical OLED is between 0.03-0.7mm, and the anode thickness is negligible compared to the substrate thickness. As can be seen from the top view of fig. 4a, the OLED is in the middle of the substrate, and the TFPV surrounds the OLED to receive light generated by the OLED in all directions and confined in the substrate.

In example 2, the structures of the OLED device and the TFPV device are the same as those of example 1, and are not described herein again. It is worth pointing out that the first electrode 21 and the third electrode 31 may be independently disconnected, and the second electrode 25 and the fourth electrode 35 may be independently disconnected, as shown in fig. 4 b. In some embodiments, the first electrode 21 and the third electrode 31 may also be continuous, as in the configuration of fig. 4c,

electrodes

31a and 31b; the second electrode 25 and the fourth electrode 35 may also be continuous (not shown in the figure). The first electrode 21 and the third electrode 31 may be made of the same material, such as ITO, and the first electrode 21 and the third electrode 31 may be formed in the same step, such as sputtering and/or photolithography. The energy storage device 4 is electrically connected to the TFPV device 2 and may also be electrically connected to the OLED device 3. Also between the two devices there may be provided an insulating dielectric layer 5 having a refractive index between 1.2-2.4, preferably between 1.5-2.2, more preferably between 1.8-2.0.

In embodiment 2, first, power is supplied to the OLED device 3 by external electric driving (not shown in the figure), and the incident angle α of a part of the large-angle light (1) emitted from the light-emitting layer 33 satisfies α ₁ ≤α≤α ₂ Then the light (1) is totally reflected at the bottom of the substrate 140 and the air interface and confined in the substrate, and at this time, because of the shared substrate, this part of light can enter the TFPV device 2 and be absorbed by the light absorbing layer 23; the incident angle alpha of a part of the high-angle light (2) emitted from the light-emitting layer 33 satisfies alpha ₂ Alpha is less than or equal to 90 degrees, then the interface between the third electrode 31 and the substrate 140The light emitted from the side surface of the third electrode 31 (i.e., the second surface) after total reflection is generated is emitted from the side surface of the third electrode 31, and the emitted light enters the substrate 140a of the TFPV device from the side surface through the insulating medium layer 5 due to the height difference between the OLED device and the TFPV device. Note that the light rays (1), (2) drawn here are merely examples, and as long as the light rays satisfying the above incident angle condition are likely to be absorbed by the TFPV device 2. In the figure, it is assumed that the refractive index of the insulating medium layer 5 is the same as that of the third electrode 31, and thus the light does not bend when entering the insulating medium layer 5 from the third electrode 31, but the refractive index of the insulating medium layer 5 may be actually the same as that of the substrate 140, so that the light bends when entering the insulating medium layer 5 from the third electrode 31 but does not bend when entering the substrate 140 from the insulating medium layer 5.

Example 3

This embodiment is substantially the same as embodiment 2 except that the OLED device 3 shares an anode with the TFPV device 2 (31 a and 31b of the integrated electronic device 500 in fig. 4 c), i.e., the first and third electrodes are continuous, the active area of the TFPV device is shown as 150a and the active area of the OLED device is shown as 150 b. The contact surfaces of the substrate in the area 150a and the electrode 31a of the TFPV device 2 form a first surface of the integrated device, and the contact surfaces of the substrate in the area 150b and the electrode 31b of the OLED device 3 form a second surface of the integrated device. As shown in FIG. 4c, a part of light is emitted from the light-emitting layer 33, and as shown by the light ray (1), it is assumed that the incident angle of the light ray (1) satisfies α ₁ ≤α≤α ₂ The light (1) is totally reflected at the interface of the substrate 150 and the air to enter the substrate area 150b of the TFPV device, thereby entering the TFPV device and being absorbed by the light absorbing layer 23. When a part of the light (2) emitted from the light-emitting layer 33 satisfies the incident angle alpha ₂ When the angle alpha is less than or equal to 90 degrees, the light (2) is totally reflected at the contact surface (namely the second surface) of the substrate of the area 150b and the electrode 31b of the OLED device, and the reflected light enters from the side surface of the substrate 150a, so that the reflected light can be absorbed by the TFPV device. In embodiment 3, the insulating dielectric layer 5 preferably has the same refractive index as the

electrodes

31a, 31b or the organic layers of the OLED device, for example between 1.8 and 2.2. Note that the light rays (1), (2) drawn here are merely examples, and as long as light rays satisfying the above-described incident angle condition are likely to be absorbed by the TFPV device 2. In some implementationsIn one example, if the light emitted from the light-emitting layer 33 is directly transmitted through the insulating medium layer to the light-absorbing layer 23 or the transmission layer of an adjacent TFPV device.

The OLED device 3 and the TFPV device 2 can be combined together in a physical splicing mode after being independently prepared respectively. In some embodiments, the TFPV device 2 may be fabricated on the substrate, and the position of the OLED device 3 may be reserved in the corresponding region according to the layout design. Meanwhile, the OLED device 3 is fabricated on another substrate, and after completion, the substrate of the OLED device 3 is aligned with a reserved area on the substrate of the TFPV device 2, and then bonded (as shown in fig. 5 a). The bonding process may use a transparent adhesive glue, preferably one that has the same or higher refractive index as the TFPV device substrate after curing. The adhesive glue may have a refractive index between 1.2 and 2.4. The adhesive glue can also be a part or the whole of the insulating medium layer. In other embodiments, the substrate of the reserved area may be locally melted by laser or high temperature, and the OLED device 3 is disposed on the melted substrate surface, and after cooling, a uniform substrate is formed. This is particularly true when the OLED device 3 and the TFPV device 2 use substrates of the same material. The substrate of the OLED device may be thinner than the TFPV device 2, or may be flexible, preferably having the same index of refraction as the substrate of the TFPV device. On the contrary, the OLED device 3 may be first fabricated on the substrate, and the position of the TFPV device 2 may be reserved according to the layout design. While the TFPV device 2 is produced on another substrate, which is subsequently bonded in the manner described above with the substrates aligned in the predetermined positions. If the substrate thickness of the TFPV device 2 is similar to that of the OLED device 3, the integrated device thus bonded naturally satisfies the structure of fig. 4 b. In other embodiments, the TFPV device 2 and the OLED device 3 may also be separately prepared, after the preparation, the TFPV device 2 and the OLED device 3 are bonded to a third substrate 6 by using a bonding adhesive 7, and an insulating medium layer 5 is filled between the TFPV device 2 and the OLED device 3, as shown in fig. 5 b. The physical splicing method has the greatest advantages that the process can be simplified, the device manufacturing difficulty is reduced, the manufacturing yield can be improved, and the cost is reduced.

The circuit control schematic represented by examples 1-3 is shown in fig. 6: including an OLED device 230, a TFPV device 220, an energy storage device 210, an external electrical drive 240, and three

control switches

250, 260, and 270. When the external electric drive 240 is turned on, the

switches

250 and 270 are closed, the OLED device 230 is powered by the external electric drive 240 to emit light, and the TFPV device 220 absorbs light in the substrate mode and/or waveguide mode of the OLED device 230 and converts the light energy into electrical energy to be stored in the energy storage device 210, and the TFPV device also absorbs ambient light. When switch 250 is open and switch 260 is closed, the energy in energy storage device 210 can supply power to OLED device 230. If the TFPV 220 device also receives illumination at this time and switch 270 is closed, TFPV device 220 may also simultaneously provide power directly to OLED device 230. The energy stored in the energy storage device 210 may also be used to power other small indoor appliances, if necessary, and is not shown in the figure. It should be noted that the circuit diagram shown in fig. 6 is only a simplest case, and more complex circuits can be designed to control the photoelectric conversion more efficiently, which is well known in the art and will not be described herein.

The invention also provides a manufacturing method of the electronic integrated device.

The OLED device and the TFPV device can be manufactured by respective manufacturing methods including, but not limited to, vacuum evaporation, chemical Vapor Deposition (CVD), sputtering, solution method, etc. Wherein the solution process preparation includes, but is not limited to, spin coating, knife coating, slot coating, roll-to-roll printing, screen printing, ink jet printing, and the like. Vacuum evaporation generally refers to vacuum at about 1 x 10 ^-6 In the case of torr, various functional layers are deposited by thermal evaporation, commonly used for the evaporation of organic materials and thin film metals, at a rate of 0.01-10 angstroms/second, respectively, in a vacuum chamber. CVD methods include, but are not limited to, PECVD, MOCVD, ALD, and the like. Among them, the OLED device is generally manufactured by a solution method or vacuum evaporation, and the TFPV device may be manufactured by a solution method or vacuum evaporation if it is OPV, or by CVD, sputtering, or the like if it is an inorganic thin film. In particular, when the same anode, such as ITO, is used for both the OLED device and the TFPV device, the anodes of both devices may be patterned on the substrate in advance simultaneouslyFor example, patterned using a photolithographic process. The OLED device and the TFPV device can also be fabricated in a sequential order using different processes. As described above, the OLED device and the TFPV device may also be prepared on separate substrates and then transferred to the same substrate. Several preparation methods are described in detail below.

The OLED device and the TFPV device are both prepared by a vacuum evaporation method, and particularly, an OPV device is taken as an example for explanation. The anode patterns required for the OLED device and the OPV device are first patterned on the same substrate, preferably ITO as the anode. Secondly, after the substrate coated with the anode is transferred into the first organic bin to complete the preparation of the organic layer of the OLED device, the substrate is transferred to the metal bin to evaporate the cathode for preparing the OLED device, then the substrate is transferred to the second organic bin to evaporate organic functional layers required by the OPV device, and at the moment, a mask plate is required to be called to cover the evaporated part of the OLED device. And after evaporation of all organic functional layers of the OPV device, transferring the substrate to the metal bin again to complete evaporation of the metal cathode of the OPV device. Preferably, after the first organic cabin completes the preparation of the organic layer of the OLED device, the substrate is transferred to the second organic cabin to directly prepare each organic functional layer of the OPV, and then transferred to the metal cabin to simultaneously evaporate the metal cathode of the OLED device and the metal cathode of the TFPV device, so that the frequency of entering the metal cabin can be reduced, the time is saved, and the efficiency is improved. When the metal cathode is evaporated at the same time, the mask can be called to carry out patterning. And finally, packaging the integrated device, wherein the OLED device and the TFPV device can be packaged separately or simultaneously, preferably, the packaging is carried out simultaneously, the process can be simplified, and the production yield can be improved. The package can be glass cover plate package or film package. In the preparation sequence, the TFPV device can be prepared first, and then the OLED device can be prepared.

And 2, preparing the OLED device and the TFPV device by a solution method. And sequentially preparing functional layers of the OLED device and the TFPV device on the substrate coated with the patterned anode. The film thickness is controlled by controlling the process conditions or solution concentration according to the particular solution process employed. For example, spin coating can control the film thickness from the concentration of the solution, the spin coating rate, and the like, and doctor blading can control the film thickness from the solution concentration and the doctor blade thickness. The patterning can be performed by means of photoetching, mask plate and screen printing mask plate. After the solution fabrication of the organic layer is completed, the metal cathodes of the two devices can be thermally evaporated simultaneously in a vacuum chamber and finally encapsulated. Cathode preparation and packaging is similar to that described in method 1.

And 3, the OLED device and the TFPV device can also be prepared by adopting a mixed process of vacuum evaporation and a solution method. For example, one or more layers of organic functional layers of an OLED device or a TFPV device are prepared by a solution method, and the rest layers are prepared by a vacuum evaporation method.

And 4, the OLED device and the TFPV device can be independently prepared at first, the OLED device and the TFPV device are respectively prepared on an independent substrate, the preparation method can be the solution method or the vacuum evaporation method, or the mixture of the solution method and the vacuum evaporation method, the prepared OLED device and the TFPV device are attached together in a physical splicing manner at the later stage, and specifically, as mentioned above, a plastic film or glass can be selected to provide mechanical support for the two bonded devices, so that the integration of the two electronic devices is completed.

The OLED device and the TFPV device can also be completed by different process sequences, such as preparing one of the devices by using a vacuum evaporation method and packaging the device, and then preparing the other device by using a solution method.

It should be understood that the various embodiments described herein are illustrative only and are not intended to limit the scope of the invention. Thus, the invention as claimed may include variations from the specific embodiments and preferred embodiments described herein, as will be apparent to those skilled in the art. Many of the materials and structures described herein may be substituted with other materials and structures without departing from the spirit of the present invention. It should be understood that various theories as to why the invention works are not intended to be limiting.

Claims

1. An electronic integrated device, comprising: a first substrate, a second substrate, at least one thin film photovoltaic device (TFPV), and at least one organic electroluminescent device (OLED);

the first substrate and the second substrate are physically connected;

a minimum lateral distance between the first electrode and the third electrode is no greater than 5mm;

the first surface is at least 80nm higher than the second surface such that the TFPV is configured to receive light generated by the OLEDs in various directions confined within the substrate while the TFPV is also configured to absorb ambient light.

2. The electronic integrated device of claim 1, wherein the first electrode and the third electrode are both anodes and the second electrode and the fourth electrode are both cathodes.

3. The electronic integrated device according to claim 1 or 2, wherein the first electrode and the third electrode are selected from ITO, IZO, metal oxides, graphene/carbon nanotube composite films, or a combination thereof, the same or different; the second and fourth electrodes are selected from Al, ag, mg, yb, moOx, or combinations thereof, the same or different.

4. The electronic integrated device of claim 1, wherein the first substrate and the second substrate are physically connected to form a continuous, same substrate.

5. The electronic integrated device of claim 4, wherein the first electrode and third electrode are continuous, and/or the second electrode and fourth electrode are continuous.

6. An electronic integrated device as in claim 1, further comprising an adhesive disposed between said first substrate and said second substrate, said first substrate and said second substrate being physically connected by said adhesive, said adhesive having a refractive index of between 1.2 and 2.4 after curing.

7. An electronic integrated device as claimed in claim 1, further comprising an adhesive disposed between the first substrate and the second substrate, and the first substrate and the second substrate are physically connected by the adhesive, and the refractive index of the cured adhesive is within ± 10% of the refractive index of at least one of the first substrate and the second substrate.

8. The electronic integrated device according to claim 1, wherein the first substrate and the second substrate are transparent substrates.

9. The electronic integrated device of claim 1, further comprising an energy storage device electrically connected to the TFPV and/or the OLED.

10. The electronic integrated device of claim 1, further comprising an external electrical drive.

11. The electronically integrated device of claim 1, wherein the TFPV and OLED further comprise an encapsulation layer, and the encapsulation layer of the TFPV and the encapsulation layer of the OLED are continuous or separate.

12. The electronic integrated device of claim 1, wherein the TFPV comprises one or more of a perovskite thin film photovoltaic, an organic thin film photovoltaic, a copper indium gallium selenide thin film solar cell, a cadmium telluride thin film solar cell, an amorphous silicon photovoltaic device, a dye sensitized photovoltaic device.

13. The electronically integrated device of claim 1, wherein the TFPV surrounds the OLED device in a circular layout.

14. The electronic integrated device of claim 1, wherein the first electrode and the third electrode each comprise a long side and a short side, and the long side of the first electrode is not adjacent to the short side of the third electrode.

15. The electronic integrated device of claim 1, wherein the first electrode and the third electrode each comprise a long side and a short side, and wherein the long side of the first electrode is not adjacent to the short side of the third electrode when a ratio of the long side to the short side of the third electrode is greater than 5.

16. An electronic integrated device as claimed in claim 1 or 14, characterized in that the side length of the shortest side of the first electrode is 2mm or more.

17. The electronic integrated device according to claim 1, further comprising an insulating dielectric layer disposed between the TFPV and the OLED, the insulating dielectric layer having a refractive index within ± 5% of a refractive index of at least one of the first electrode, the third electrode, and the substrate.

18. An electronic integrated device according to claim 17, wherein the refractive index of the insulating dielectric layer is between 1.2 and 2.4.

19. An electronic integrated device according to claim 17, wherein the refractive index of the insulating dielectric layer is between 1.5 and 2.2.

20. An electronic integrated device according to claim 17, wherein the refractive index of the insulating dielectric layer is between 1.8 and 2.0.

21. An electronic integrated device as claimed in claim 1, wherein the minimum lateral distance between said first electrode and said third electrode is not more than 3mm.

22. An electronic integrated device according to claim 1, wherein the minimum lateral distance between the first electrode and the third electrode is not more than 1mm.

23. A method of making an electronic integrated device, comprising:

providing a first substrate;

providing a second substrate;

the minimum lateral distance between the first electrode and the third electrode is not more than 5mm;

the first surface is at least 80nm higher than the second surface such that the TFPV is configured to receive light generated by the OLEDs in various directions confined within the substrate while the TFPV may also absorb ambient light.

24. The method of making an electronic integrated device according to claim 23, wherein the first and third electrodes are anodes and the second and fourth electrodes are cathodes.

25. The method for manufacturing an electronic integrated device according to claim 23, wherein the first substrate and the second substrate are physically connected to form a continuous same substrate.

26. The method of manufacturing an electronic integrated device according to claim 25, wherein the first electrode and the third electrode are continuous, or the second electrode and the fourth electrode are continuous.

27. The method for manufacturing an electronic integrated device as claimed in claim 23, further providing an adhesive paste, wherein the first substrate and the second substrate are physically connected by the adhesive paste, and a difference between a refractive index of the adhesive paste after curing and a refractive index of at least one of the first substrate and the second substrate is within ± 10%.

28. The method for manufacturing an electronic integrated device according to claim 23, wherein the first electrode and the third electrode are simultaneously manufactured, and/or the second electrode and the fourth electrode are simultaneously manufactured.

29. The method of claim 23 wherein said TFPV is in a circular layout around the outside of the OLED.

30. The method of fabricating an electronically integrated device according to claim 23, further providing an insulating dielectric layer disposed between the TFPV and the OLED.